TWI814537B - Light sensor - Google Patents

Abstract

A light sensor includes a data line and a first electrostatic protection component. The data line includes a conductive line. The first electrostatic protection component is disposed beside the data line, and the first electrostatic protection component includes a first mainbody and a first conductive extension. The first mainbody includes a first conductor layer, and the first conductor layer is physically separated from the conductive line of the data line. The first conductive extension extends from the first mainbody toward the data line and partially overlaps the data line, and the first conductive extension is physically separated from the conductive line of the data line.

Description

light sensor

The present disclosure relates to light sensors with electrostatic protection components.

Light sensors are commonly used in digital cameras or video cameras, such as thin film transistor light sensors, complementary metal oxide semiconductor image sensors, or charge coupled devices. In addition, light sensors are also widely used in non-visible light (such as X-ray) sensors for security inspection, industrial inspection, or medical diagnosis.

The manufacturing process of thin film transistor photo sensors includes array process, unit process, and module process. However, the pixels and peripheral driving circuits completed during the array manufacturing process may be damaged due to electrostatic discharge (ESD) events in subsequent manufacturing processes. Therefore, providing better electrostatic protection is a problem that needs to be solved in the current thin film transistor photo sensor manufacturing process.

In view of the above problems, the purpose of this disclosure is to provide a photo sensor with an electrostatic discharge protection circuit.

Some embodiments of the present disclosure provide a light sensor including a data line and a first electrostatic protection component. Data lines contain wires. The first electrostatic protection component is disposed next to the data line. The first electrostatic protection component includes a first body and a first conductive extension piece. The first body includes a first conductor layer, and the first conductor layer is physically separated from the conductors of the data line. The first conductive extension extends from the first body toward the data line and partially overlaps the data line, and is physically separated from the conductors of the data line.

In some embodiments, the data lines also include a first dielectric layer over the conductive lines. The first body of the first electrostatic protection component also includes a first dielectric layer and a second conductor layer. The first dielectric layer is over the first conductor layer, and the first dielectric layer laterally separates the conductors of the data lines from the first conductor layer. The second conductor layer is over the first dielectric layer, with the first conductive extension extending from the second conductor layer.

In some embodiments, in the light sensor, the first body includes a first transistor, and the first transistor includes: a gate, a first source/drain and a second source/drain, and a channel. layer. The gate is composed of a first conductor layer. The first source/drain and the second source/drain are composed of the second conductor layer, and the first source/drain and the second source/drain are separated. The channel layer is interposed between the first source/drain electrode and the second source/drain electrode, wherein the material of the channel layer is amorphous silicon or metal oxide.

In some embodiments, the light sensor further includes an electrostatic discharge ring and a first conductive connection. The first conductive connecting member is electrically coupled to the first electrostatic protection resistor and the electrostatic discharge ring.

In some embodiments, in the light sensor, the first conductive connector and the data line do not overlap in a top view.

In some embodiments, in the light sensor, the first conductive connector overlaps the data line in a top view.

In some embodiments, the light sensor further includes a second electrostatic protection component. The second electrostatic protection component includes a second body and a second conductive extension. The second conductive extension piece is electrically connected to the data line and the second body.

In some embodiments, in the photo sensor, the first body of the first electrostatic protection component and the second body of the second electrostatic protection component have the same configuration.

In some embodiments, the light sensor further includes an electrostatic discharge ring and a second conductive connection. The second conductive connecting member connects the second electrostatic protection component and the electrostatic discharge ring.

In some embodiments, the light sensor further includes another data line and a third electrostatic protection component. Another data line is arranged parallel to the data line. The third electrostatic protection component is disposed next to the other data line. The third electrostatic protection component includes a third main body and a third conductive extension piece. The third conductive extension piece is electrically connected to the other data line and the third electrostatic protection component.

The spirit of the present disclosure will be clearly explained in the following drawings and detailed descriptions. Anyone with ordinary knowledge in the relevant technical field will be able to use the techniques taught by this disclosure after understanding the preferred implementation modes and examples of the present disclosure. Changes and modifications may be made without departing from the spirit and scope of this disclosure.

Throughout this specification, the same reference numbers refer to the same elements. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrical connection" or "coupling" may mean the presence of other components between the two components.

It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, or layers, these elements, components, regions, or layers should not be limited thereto. limitations of these terms. These terms are only used to distinguish one element, component, region, or layer from another element, component, region, or layer. Thus, a "first" element, component, region, or layer discussed below could be termed a "second" element, component, region, or layer without departing from the teachings herein.

Additionally, relative terms, such as "lower" or "bottom" and "upper" or "top," may be used herein to describe one element's relationship to another element as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation illustrated in the figures. For example, if the device in one of the figures is turned over, elements described as "below" other elements would then be oriented "above" the other elements.

Example embodiments are described herein with reference to top-down schematic illustrations of idealized embodiments. Accordingly, variations in the shape of the illustrations, for example as a result of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, regions shown or described as flat may typically have rough and/or non-linear characteristics. Additionally, the acute angles shown may be rounded. Accordingly, the areas shown in the figures are schematic in nature and their shapes are not intended to illustrate the precise shapes of the areas and are not intended to limit the scope of the claims.

Figure 1 illustrates a partial circuit diagram of a light sensor according to some embodiments. The photo sensor 100 includes a gate driving circuit 102, a plurality of columns of gate lines 110 extending from the gate driving circuit 102, and a plurality of rows of data lines 112. In a pixel unit, the source of the transistor 114 is connected to the anode of the photodiode (ie, the photosensitive element) 280 , the anode of the photodiode 280 is connected to the common voltage COM, and the drain is connected to the data line 112 . An electrostatic discharge ring 120 is provided around the photo sensor 100 . The first electrostatic protection component 122 and the second electrostatic protection component 124 are each coupled to the electrostatic discharge ring 120 .

Please refer to Figures 2A and 2B. Figure 2A is a top view of the data line 112 and the electrostatic protection circuit in the peripheral area of the photo sensor 100; Figure 2B is along the line DD'- in Figure 2A. Cross-sectional view taken from D”-D’”. The first electrostatic protection component 122 includes a first body 130 and a first conductive extension 132 and is connected to the electrostatic discharge ring 120 via a first conductive connection 134 . The second electrostatic protection component 124 includes a second body 140 and a second conductive extension 142 and is connected to the electrostatic discharge ring 120 via a second conductive connection 144 .

The second electrostatic protection component 124 is connected to the data line 112 via the second conductive extension 142 . When electrostatic discharge occurs, a large amount of charges may flow from the data line 112 to the electrostatic discharge ring 120 through the second electrostatic protection component 124 . Afterwards, when it is detected that the second electrostatic protection component 124 failed due to electrostatic discharge, laser cutting is performed, for example, the second conductive extension member 142 is cut along the cutting line LL′, so that the data line 112 is connected to the second electrostatic protection component 124 . The two electrostatic protection components 124 are electrically insulating.

In the top view of FIG. 2A , the first conductive extension 132 of the first electrostatic protection component 122 extends from the first body 130 toward the data line 112 and intersects with the data line 112 . In other words, the vertical projection of the data line 112 intersects the vertical projection of the first conductive extension 132 . 2B is a cross-sectional view taken along line D-D′-D″-D′″ showing the overlapping region 150 of the data line 112 and the first conductive extension 132 and the first body region 152. In the overlapping area 150 , the first conductive extension member 132 and the data line 112 are at different levels, and the first conductive extension member 132 is higher than the data line 112 . The first electrostatic protection component 122 is disposed in a floating manner near the data line 112 . That is to say, depending on the needs, the first electrostatic protection component 122 can be connected to the data line 112 or the first electrostatic protection component 122 can not be connected to the data line 112 .

When the data line 112 is connected to the second electrostatic protection component 124, since the second electrostatic protection component 124 provides the function of electrostatic protection, the first electrostatic protection component 122 is not connected to the data line 112; in other words, at this time, the first electrostatic protection component 122 The first conductive extension 132 is not electrically connected to the data line 112 . The conductors 222 on the data line 112 and the first conductive extension 132 are electrically insulated via the insulating layer between the conductors 222 on the data line 112 and the first conductive extension 132 .

When an electrostatic discharge occurs on the data line 112 and the second conductive extension 142 of the second electrostatic protection component 124 is cut off, the data line 112 loses its electrostatic protection function, and when reading the data line 112 , the integrator receives less The leakage current from the original second electrostatic protection component 124 will cause a line defect due to the difference in current received from other data lines. In order to improve this problem, welding can be used to connect the first conductive extension 132 of the first electrostatic protection component 122 and the conductor 222 of the data line 112. Therefore, the data line 112 can again obtain the function of electrostatic protection, and when reading When the data line 112 is connected, the integrator can receive the leakage current from the first electrostatic protection component 122, so there will be no difference between the signal of this data line 112 and the signals of other data lines due to the failure of the electrostatic protection component.

In some embodiments, the first body 130 of the first electrostatic protection component 122 and the second body 140 of the second electrostatic protection component 124 have the same configuration, so the leakage current from the first electrostatic protection component 122 is the same as the leakage current from the second electrostatic protection component 124 . The magnitude of the leakage current of the guard components 124 is substantially uniform.

In some embodiments, the first electrostatic protection component 122 and the second electrostatic protection component 124 are bottom gate thin film transistors. For example, FIG. 2B shows the first electrostatic protection component 122 having a first body region 152 of a bottom gate thin film transistor. In other embodiments, other types of electrostatic protection components are possible. Forming the first electrostatic protection component 122 , the second electrostatic protection component 124 , and the electrostatic discharge ring 120 may be performed together with the arrangement of the active element array and signal lines in the sensing area of the photo sensor 100 .

Please refer to FIG. 2B again. The peripheral area of the photo sensor 100 includes the substrate 210, the first metal layer 220, the first dielectric layer 230, the channel layer 240, the second metal layer 250, and the second dielectric layer 260.

The substrate 210 may be, for example, a glass substrate. The first metal layer 220 is disposed over the substrate 210 and includes the conductive lines 222 in the data lines 112 and the first conductor layer 224 in the first body region 152 . The first conductor layer 224 may also be called a gate. The first dielectric layer 230 is disposed above the substrate 210 and the first metal layer 220. The first dielectric layer 230 may also be called a gate insulating layer. The material of the first dielectric layer 230 may be, for example, silicon oxide, silicon nitride, or silicon oxynitride. Channel layer 240 is disposed above first conductor layer 224 and first dielectric layer 230 . The channel layer 240 may be made of amorphous silicon or metal oxide (eg, indium gallium zinc oxide (IGZO)). The second metal layer 250 is disposed above the first dielectric layer 230 and the channel layer 240. The second metal layer 250 includes a first source/drain 252 and a second source/drain 254 . The first source/drain 252 and the second source/drain are collectively referred to as the second conductor layer 251. The first source/drain 252 and the second source/drain 254 are separated, and the channel layer 240 is interposed between the first source/drain 252 and the second source/drain 254. The second metal layer 250 also includes a first conductive extension 132 extending from the second conductor layer 251 (eg, the first source/drain 252 ) to above the conductor 222 of the data line 112 . The second dielectric layer 260 is disposed above the channel layer 240 and the second metal layer 250 . In some embodiments, the first metal layer 220 is equivalent to the metal level M1 of the photo sensor 100 , and the second metal layer 250 is equivalent to the metal level M2 of the photo sensor 100 .

Please refer to FIG. 3 , which illustrates a partial cross-sectional view of the sensing area of the photo sensor 100 according to some embodiments. The sensing area of the photo sensor 100 sequentially includes the substrate 210, the first metal layer 220, the first dielectric layer 230, the channel layer 240A, the second metal layer 250, the second dielectric layer 260, First planar layer 270, lower electrode 272, third dielectric layer 274, photodiode 280, upper electrode 290, fourth dielectric layer 292, second planar layer 294, fifth dielectric layer 296, third planar layer 298 , optical wavelength conversion layer 300, and cover layer 310. The sensing area of the photo sensor 100 also includes connectors 322 and 324 in the first planar layer 270 and connectors 332 and 334 in the second planar layer 294 .

In the sensing area of the photo sensor 100, the transistor 114 is a thin film transistor, including a first conductor layer 224A, a first dielectric layer 230, a channel layer 240A, a first source/drain electrode 252A and a second Source/Drain 254A. In some embodiments, the material of the channel layer 240A is amorphous silicon, or a metal oxide such as indium gallium zinc oxide (IGZO).

The photodiode 280 may be, for example, a PIN diode, including a first type semiconductor material layer 282 , an intrinsic semiconductor material layer 284 , and a second type semiconductor material layer 286 . The optical wavelength conversion layer 300 can convert non-visible light (eg, X-rays) into light that can produce a photocurrent effect on the photodiode 280 . In some embodiments, the optical wavelength conversion layer 300 includes scintillator to sense X-rays. The material of the scintillator may be, for example, cesium iodide, thallium-activated doped cesium iodide, or sodium-activated doped cesium iodide, iridium-doped gallium oxysulfide, cadmium telluride, or the like.

It is understood that the configuration of the sensing area of the photo sensor 100 in Figure 3 is only an embodiment, and those of ordinary skill in the art will also understand that other components, materials, arrangements, or the like in the sensing area may also be used. within the scope of embodiments of the present disclosure.

See Figures 4A and 4B, and Figures 5A to 5C. Figure 4A is a layout diagram of data lines and electrostatic protection circuitry of a light sensor in the peripheral area according to some embodiments. Figure 4B is an enlarged view of the first electrostatic protection component 122 in Figure 4A. For the sake of clarity, only the first metal layer, the second metal layer, the via hole between the first metal layer and the second metal layer, and the channel of the photo sensor are shown in Figures 4A and 4B layer. The first body 130 of the first electrostatic protection component 122 and the second body 140 of the second electrostatic protection component 124 each include two transistors.

The first transistor 160 and the second transistor 162 in the first body 130 and the third transistor 170 and the fourth transistor 172 in the second body 140 have similar structures. The conductive lines 222 in the data lines 112 and the first conductor layer 224 in both the first body 130 and the second body 140 are at the level of the first metal layer 220 . In addition, the second conductive extension 142 of the second electrostatic protection component 124 is also at the level of the first metal layer 220 .

First source/drain 252 and second source/drain 254, first conductive connection 134, second conductive connection 144, and electrostatic discharge ring in both first body 130 and second body 140 120 at the level of the second metal layer 250 . In addition, the first conductive extension 132 of the first electrostatic protection component 122 is also at the level of the second metal layer 250 .

The first electrostatic protection component 122 is electrically connected to the electrostatic discharge ring 120 through the first conductive connection 134 . The first conductive connection member 134 includes a first conductive structure 134A and a first conductive connection line 134B. The second electrostatic protection component 124 is electrically connected to the electrostatic discharge ring 120 via the second conductive connection 144 . In some embodiments, the first conductive structure 134A and the second conductive connection 144 have substantially the same shape.

In some embodiments, the conductors 222 of the data line 112 are located on the first metal layer, the electrostatic discharge ring 120 is located on the second metal layer, and the first conductive structure 134A and the second conductive connector 144 are located on the second metal layer, As shown in Figure 2B and Figure 4B.

In other embodiments, the first conductive structure 134A and the second conductive connection member 144 may be disposed at a level higher than the second metal layer, connected to the first body 130 and the second body 140 via the connection members, and connected to the first body 130 and the second body 140 via other connections. The connector is connected to the electrostatic discharge ring 120 .

In yet other embodiments, the wires 222 of the data line 112 may be disposed on the second metal layer, the electrostatic discharge ring 120 may be disposed on the first metal layer, and the first conductive structure 134A and the second conductive connector 144 may be disposed on First metal layer.

Figure 5A is a cross-sectional view taken along line A-A' of Figure 4B. The first conductive extension 132 in the second metal layer 250 extends from the first body region 152 toward the conductor 222 of the data line 112 , the first conductive extension 132 is higher than the conductor 222 , and via the first dielectric layer 230 , the first Conductive extension 132 and wire 222 are separate. The via hole 256 connects the first metal layer 220 and the second metal layer 250 .

Figure 5B is a cross-sectional view taken along line B-B' of Figure 4B. The material of the channel layer 240 of the first transistor 160 is amorphous silicon or metal oxide (eg IGZO). Since the channel layer 240 made of amorphous silicon or metal oxide material has high resistance, the channel layer 240 is in a non-conductive state under normal conditions. When electrostatic discharge occurs, the high-voltage charge causes the channel layer 240 to be in a conductive state, allowing the static electricity to pass through and be quickly released.

Figure 5C is a cross-sectional view taken along line C-C' of Figure 4B. The via hole 258 connects the first conductor layer 224 and the second metal layer 250 in the first metal layer 220 .

Please refer to FIG. 6 , which illustrates a cross-sectional view taken along line A-A′ of FIG. 4B after welding the first conductive extension 132 and the wire 222 of the data line 112 . The thermal energy of the soldering destroys the second dielectric layer 260 and causes the first conductive extension 132 over the conductor 222 to melt to form a solder joint 136 that contacts the conductor 222 of the data line 112 . Therefore, after soldering, the wires 222 of the data line 112 are electrically connected to the first electrostatic protection component 122 via the soldering point 136 and the conductive extension portion 132A. Therefore, the welded first electrostatic protection component 122 can provide an electrostatic protection function. Later, when electrostatic discharge occurs on the data line 112 again, the welded first electrostatic protection component 122 can provide an electrostatic protection function. Furthermore, when reading the data line 112, the integrator may receive leakage current from the welded first electrostatic protection component 122.

Referring to FIG. 7 , a layout diagram of a data line and an electrostatic protection circuit of a light sensor according to other embodiments is shown. The difference between the photo sensor in FIG. 7 and the photo sensor 100 in FIG. 4A is that the first conductive connection member 134 connecting the first electrostatic protection component 122 and the electrostatic discharge ring 120 is partially disposed above the data line 112. That is, the first conductive connection line 134B may be disposed above the conductor 222 of the data line 112 . That is to say, the first conductive connection member 134 and the data line 112 can be arranged overlapping to save wiring space.

Figure 8A shows a layout diagram of multiple data lines and multiple electrostatic protection circuits of the photo sensor. After the array process and unit process of the photo sensor are completed, a first electrostatic protection component 122 and a second electrostatic protection component 124 are provided next to each data line 112 in the peripheral area of the photo sensor, and near the photo sensor. An electrostatic discharge ring 120 is provided around the detector. The second electrostatic protection component 124 is connected to the data line 112 to provide an electrostatic protection function for the data line 112 . The first electrostatic protection component 122 is disposed in a floating manner next to the data line 112 so that when the second electrostatic protection component 124 fails, the data line 112 can regain its electrostatic protection function through welding.

During the module manufacturing process, the photo sensor will be connected to the integrated circuit chip. In the assembled photo sensor, the first electrostatic protection component 122, the second electrostatic protection component 124, and the electrostatic discharge ring 120 no longer face each other. The active element array substrate of the photo sensor provides the function of electrostatic protection; therefore, the area where the electrostatic protection circuit formed during the array process may be cut off or partially cut off later, and can be replaced by another electrostatic protection circuit or by another electrostatic protection circuit. The electrostatic protection circuit in the integrated circuit chip provides the electrostatic protection function of the product.

The cutting line I-I' is shown in FIG. 8A and is located between the first electrostatic protection component 122 and the second electrostatic protection component 124. In other embodiments, the cutting line may optionally be positioned closer to the first static protection component 122 . In yet other embodiments, the cutting line may optionally be disposed closer to the periphery of the photo sensor 100 so that the second electrostatic protection component 124 may be retained.

Figure 8B shows a partial top view of the photo sensor after cutting according to the cutting line II' of Figure 8A. FIG. 8B shows that a plurality of first electrostatic protection components 122 are retained in the photo sensor, each of which is disposed in a floating manner on one side of the corresponding data line 112 .

Referring to Figure 8C, in some embodiments, the light sensor includes a plurality of data lines arranged in parallel, wherein a floating first electrostatic protection component 122 is provided next to one data line 112, and another data line 112A A third electrostatic protection component 126 is provided next to it. The data line 112 and the first electrostatic protection component 122 are not electrically connected. The first conductive extension 132 partially overlaps and is physically separated from the conductors in the data line 112 . The third electrostatic protection component 126 is equivalent to the first electrostatic protection component 122 after welding (see the cross-sectional view in FIG. 6 ). The third electrostatic protection component 126 includes a third body 130A and a third conductive extension 135 . The third body 130A is similar to the first body 130 of the first electrostatic protection component 122 . The third conductive extension 135 includes a solder point 136 and a conductive extension portion 132A. Through the third conductive extension 135 , the data line 112A is electrically connected to the third electrostatic protection component 126 .

According to multiple embodiments of the present disclosure, in the optical sensor, a floating electrostatic protection component is added next to each data line, so that after the electrostatic protection component originally electrically connected to the data line fails, the data The line is connected to a floating electrostatic protection component, so the data line can be provided with an electrostatic protection function again, and the signal read from this data line will not be different due to the failure of the original electrostatic protection component.

Although the disclosure has been disclosed in multiple embodiments and examples, it is not intended to limit the disclosure. Anyone skilled in the art can make various changes without departing from the spirit and scope of the disclosure. and modifications, therefore the scope of protection of this disclosure shall be subject to the scope of the appended patent application.

100:Light sensor 102: Gate drive circuit 110: Gate line 112:Data cable 112A:Data cable 114:Transistor 120:Electrostatic discharge ring 122: The first electrostatic protection component 124: Second electrostatic protection component 126: The third electrostatic protection component 130:First subject 130A: Third party 132: First conductive extension piece 132A: Conductive extension part 134: First conductive connector 134A: Conductive structure 134B: Conductive connecting wire 135:Third conductive extension piece 136:Welding point 140:Second subject 142: Second conductive extension piece 144: Second conductive connector 150: Overlapping area 152:First main area 160:First transistor 162: Second transistor 170:Third transistor 172:The fourth transistor 210:Substrate 220: First metal layer 222:Wire 224: First conductor layer 224A: First conductor layer 230: First dielectric layer 240: Channel layer 240A: Channel layer 250: Second metal layer 251: Second conductor layer 252: First source/drain 252A: First source/drain 254: Second source/drain 254A: Second source/drain 256: Guide hole 258: Guide hole 260: Second dielectric layer 270: First flat layer 272: Lower electrode 274:Third dielectric layer 280:Photodiode 282: First type semiconductor material layer 284:Intrinsic semiconductor material layer 286: Second type semiconductor material layer 290: Upper electrode 292:Fourth dielectric layer 294: Second flat layer 296:Fifth dielectric layer 298:Third flat layer 300: Optical wavelength conversion layer 310: Covering layer 322: Connector 324: Connector 332: Connector 334: Connector COM: common voltage A-A’: line B-B’: line C-C’: line D-D’-D”-D’”: line I-I’: cutting line L-L’: cutting line

In order to make the above and other objects, features, advantages and implementation modes of the present disclosure more obvious and understandable, the accompanying drawings are described as follows. Figure 1 is a partial circuit diagram of a light sensor according to some embodiments. Figure 2A is a schematic top view of an electrostatic protection circuit in a peripheral area of a photo sensor according to some embodiments. Figure 2B is a cross-sectional view taken along line D-D’-D”-D’” of Figure 2A. Figure 3 is a partial cross-sectional view of a sensing area of a light sensor according to some embodiments. Figure 4A is a partial layout diagram of a light sensor according to some embodiments. Figure 4B is a partial enlarged view of the electrostatic protection component of Figure 4A. Figure 5A is a cross-sectional view taken along line A-A' of Figure 4B. Figure 5B is a cross-sectional view taken along line B-B' of Figure 4B. Figure 5C is a cross-sectional view taken along line C-C' of Figure 4B. Figure 6 is a cross-sectional view taken along line A-A' of Figure 4B after welding in accordance with some embodiments of the present disclosure. Figure 7 is a partial layout diagram of a photoreceptor according to other embodiments. Figure 8A is a partial layout diagram of a photosensor according to some embodiments. Figure 8B is a partial layout diagram of a photo sensor according to some embodiments. Figure 8C is a partial layout diagram of a photo sensor according to some embodiments.

Domestic storage information (please note in order of storage institution, date and number) without Overseas storage information (please note in order of storage country, institution, date, and number) without

112:Data cable

120:Electrostatic discharge ring

122: The first electrostatic protection component

124: Second electrostatic protection component

130:First subject

132: First conductive extension piece

134: First conductive connector

140:Second subject

142: Second conductive extension piece

144: Second conductive connector

D-D’-D”-D’”: line

L-L’: cutting line

Claims (10)

A light sensor containing: a data line, including a conductor; and A first electrostatic protection component is provided next to the data line. The first electrostatic protection component includes: a first body including a first conductor layer physically separated from the conductor of the data line; and A first conductive extension extends from the first body toward the data line and partially overlaps the data line. The first conductive extension is physically separated from the conductor of the data line. The light sensor as described in claim 1, wherein: The data line also includes a first dielectric layer above the conductive line; and The first body of the first electrostatic protection component also includes: a first dielectric layer above the first conductor layer, and the first dielectric layer laterally separates the conductor of the data line and the first conductor layer; and A second conductor layer is above the first dielectric layer, wherein the first conductive extension extends from the second conductor layer. The light sensor of claim 2, wherein the first body includes a first transistor, and the first transistor includes: a gate composed of the first conductor layer; a first source/drain and a second source/drain formed from the second conductor layer, the first source/drain and the second source/drain being separated; and A channel layer is interposed between the first source/drain and the second source/drain, wherein the material of the channel layer is amorphous silicon or metal oxide. The light sensor as described in claim 1 also includes: an electrostatic discharge ring; and A first conductive connection member electrically couples the first electrostatic protection component and the electrostatic discharge ring. The light sensor of claim 4, wherein the first conductive connector and the data line do not overlap in a top view. The light sensor of claim 4, wherein the first conductive connector overlaps the data line in a top view. The light sensor as described in claim 1 also includes a second electrostatic protection component, which includes: a second subject; and A second conductive extension member electrically connects the data line and the second body. The light sensor of claim 7, wherein the first body of the first electrostatic protection component and the second body of the second electrostatic protection component have the same configuration. The light sensor as described in claim 7, further comprising: an electrostatic discharge ring; and A second conductive connector connects the second electrostatic protection component and the electrostatic discharge ring. The light sensor as described in claim 1 also includes: another data line, arranged parallel to the data line; and A third electrostatic protection component is provided next to the other data line. The third electrostatic protection component includes: a third party; and A third conductive extension member is electrically connected to the other data line and the third electrostatic protection component.

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