TW202332073A - Light sensor - Google Patents

Abstract

A light sensor includes a substrate, a gate line, a data line, a thin-film transistor, a light sensing element, a common line, and a light conversion material layer. The gate line is located over the substrate. The data line is located over the substrate. A gate of the thin-film transistor is electrically connected to the gate line. A drain of the thin-film transistor is electrically connected to the data line. A lower electrode of the light sensing element is electrically connected to a source of the thin-film transistor. The common line is located over the substrate and electrically connected to an upper electrode of the light sensing element. The light conversion material layer is located over the thin-film transistor and the light sensing element. The light conversion material layer includes a light conversion material and a transparent conductive material. The transparent conductive material wraps the light conversion material.

Description

light sensor

The disclosure relates to a light sensor.

Light sensors are commonly used in electronic devices such as smartphones, laptops or tablets. In addition, light sensors are also used in medical diagnostic tools. For example, an X-ray sensor configured to receive X-rays can convert X-rays passing through human tissue into visualized images. How to propose a light sensor that can improve the efficiency of visible light being received by the light sensing element in the light sensor to greatly improve the quality of the image is one of the problems that the industry is eager to invest in research and development resources to solve.

In view of this, one purpose of the present disclosure is to propose a light sensor capable of solving the above problems.

In order to achieve the above object, according to an embodiment of the present disclosure, a light sensor includes a substrate, a gate line, a data line, a thin film transistor, a light sensing element, a common electrode line, and a light conversion material layer. The gate lines are located above the substrate. The data lines are located above the substrate. The gate of the thin film transistor is electrically connected to the gate line. The drain of the thin film transistor is electrically connected to the data line. The lower electrode of the light sensing element is electrically connected to the source of the thin film transistor. The common electrode line is located above the substrate and is electrically connected to the upper electrode of the photo-sensing element. The light conversion material layer is located above the thin film transistor and the light sensing element. The photo-converting material layer includes a photo-converting material and a transparent conductive material. A transparent conductive material encases the light converting material.

In one or more embodiments of the present disclosure, the light sensor further includes a barrier layer located between the light conversion material layer and the light sensing element.

In one or more embodiments of the present disclosure, the light conversion material layer has a thickness ranging from 20 μm to 1000 μm.

In one or more embodiments of the present disclosure, the light conversion material has an average diameter in the range between 10 μm and 100 μm.

In one or more embodiments of the present disclosure, the transparent conductive material has a thickness ranging from 0.01 μm to 5 μm.

In one or more embodiments of the present disclosure, the light sensor further includes a metal layer on the thin film transistor and the light sensing element.

In one or more embodiments of the present disclosure, the light sensor further includes a metal layer directly above the light sensing element.

In one or more embodiments of the present disclosure, the light sensor further includes a reflective layer located above the light conversion material layer.

In one or more embodiments of the present disclosure, the material of the reflective layer includes titanium dioxide.

In one or more embodiments of the present disclosure, the photosensor further includes a first protection layer located above the photo-converting material layer.

In one or more embodiments of the present disclosure, the photosensor further includes an adhesive layer located between the reflective layer and the first protection layer.

In one or more embodiments of the present disclosure, the material of the first protective layer includes parylene.

In one or more embodiments of the present disclosure, the photosensor further includes a second protection layer located above the photo-converting material layer.

In one or more embodiments of the present disclosure, the metal layer is located between the first passivation layer and the second passivation layer.

In one or more embodiments of the present disclosure, the material of the second protective layer includes parylene.

To sum up, in the light sensor of the present disclosure, since the light sensor includes a light conversion material layer with a light conversion material, the X-rays incident on the light sensor can be converted into 300 nm and 800 nm Visible light in the wavelength range between nanometers. In the light sensor of the present disclosure, since the transparent conductive material wraps the photo-converting material, it is possible to avoid adding an additional photomask during the manufacturing process and thus increasing the cost of the manufacturing process. In the light sensor of the present disclosure, since the transparent conductive material is transparent, it can avoid affecting the penetration of visible light. With the light sensor of the present disclosure, visible light can be received by the light sensing element more efficiently to improve image quality.

The above description is only used to explain the problems to be solved by the present disclosure, the technical means to solve the problems, and the effects thereof, etc. The specific details of the present disclosure will be introduced in detail in the following implementation methods and related drawings.

The following will disclose multiple implementations of the present disclosure with diagrams, and for the sake of clarity, many practical details will be described together in the following description. However, it should be understood that these practical details should not be used to limit the present disclosure. That is to say, in some embodiments of the present disclosure, these practical details are unnecessary. In addition, for the sake of simplifying the drawings, some well-known structures and components will be shown in a simple and schematic manner in the drawings. The same reference numbers will be used throughout the drawings to refer to the same or similar elements.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout the specification, the same drawing numerals denote the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" means that other elements exist between two elements.

It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, and/or or parts thereof shall not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a "first element," "component," "region," "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include plural forms including "at least one" unless the content clearly dictates otherwise. "Or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It should also be understood that when used in this specification, the terms "comprising" and/or "comprising" designate the stated features, regions, integers, steps, operations, the presence of elements and/or parts, but do not exclude one or more Existence or addition of other features, regions as a whole, steps, operations, elements, parts and/or combinations thereof.

Additionally, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element as shown in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "below" can encompass both an orientation of "below" and "upper," depending on the particular orientation of the drawing. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "under" can encompass both an orientation of above and below.

As used herein, "about," "approximately," or "substantially" includes stated values and averages within acceptable deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurements in question and relative A specific amount of measurement-related error (ie, a limitation of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the terms "about", "approximately" or "substantially" used herein can choose a more acceptable deviation range or standard deviation according to optical properties, etching properties or other properties, and it is not necessary to use one standard deviation to apply to all properties .

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted to have meanings consistent with their meanings in the context of the relevant art and the present invention, and will not be interpreted as idealized or excessive formal meaning, unless expressly so defined herein.

Please refer to Figure 1. FIG. 1 is a top view of a light sensor 100 according to an embodiment of the present disclosure. As shown in FIG. 1, in this embodiment, the light sensor 100 includes a thin film transistor 110, a light sensing element 120, a gate line M1, a source/drain region M2, a data line DL, and a common electrode line. M3 and opening O _BP1 . The thin film transistor 110 includes a gate G. The gate G of the thin film transistor 110 is connected to the gate line M1. The light sensing element 120 further includes an upper electrode 122 . The data line DL is also connected to the thin film transistor 110 . The common electrode line M3 is connected to the light sensing element 120 . In some embodiments, the data line DL is parallel to the common electrode line M3, and the gate line M1 is perpendicular to the data line DL and the common electrode line M3. The specific structure of the light sensor 100 will be described in detail below.

In some embodiments, the thin film transistor 110 may be a thin film transistor (Thin-film Transistor; TFT), indium gallium zinc oxide (Indium Gallium Zinc Oxide; IGZO), low temperature polysilicon (Low Temperature Poly-silicon; LTPS) or other similar material.

In some embodiments, the light sensing element 120 may be a photodiode.

Please refer to Figure 2. FIG. 2 is a cross-sectional view of the light sensor 100 based on the section line I-I' of FIG. 1 according to an embodiment of the present disclosure. As shown in FIG. 2, in this embodiment, the light sensor 100 includes a substrate S, a thin film transistor 110, a light sensing element 120, a light conversion material layer 130, a reflective layer 140, a gate line M1 and a common electrode. Line M3. As shown in FIG. 2 , the thin film transistor 110 includes a gate G, a gate insulating layer GSN, a source/drain region M2 and a channel layer AS. In some embodiments, the gate insulating layer GSN covers the substrate S and the gate G. In some embodiments, the channel layer AS is located on the gate insulating layer GSN. As shown in FIG. 2 , the source/drain region M2 includes a source M2S and a drain M2D. In some implementations, the source M2S and the drain M2D are located on the channel layer AS. As shown in FIG. 2 , the light sensing element 120 includes a PIN diode 121 , an upper electrode 122 and a lower electrode 123 . The upper electrode 122 is located on the PIN diode 121 . The lower electrode 123 is located under the PIN diode 121 and is electrically connected to the source M2S. The data line DL is located above the substrate S and is electrically connected to the drain M2D. As shown in FIG. 2 , the common electrode line M3 is located above the substrate S and is electrically connected to the upper electrode 122 .

Please continue to refer to Figure 2. As shown in FIG. 2, in this embodiment, the photo-converting material layer 130 is located above the thin film transistor 110 and the photo-sensing element 120, and is configured to convert X-rays into, for example, between 500 nanometers and 600 nanometers. Visible light in the wavelength range between. In some embodiments, the visible light can be green light. As shown in FIG. 2 , the light conversion material layer 130 includes several light conversion units 132 . The specific structure of the light conversion unit 132 will be described in more detail below. As shown in FIG. 2 , in this embodiment, the reflective layer 140 is located above the thin film transistor 110 and the light sensing element 120 . In more detail, in some embodiments, the reflective layer 140 is located on the light conversion material layer 130 .

Please refer to Figure 3. FIG. 3 is a schematic diagram of a light converting unit 132 according to an embodiment of the present disclosure. In this embodiment, the light conversion unit 132 includes a light conversion material 1321 and a transparent conductive material 1322 . In some embodiments, as shown in FIG. 3 , the transparent conductive material 1322 wraps the light conversion material 1321 . The light conversion material 1321 is configured to convert X-rays into visible light, eg, in a wavelength range between 300 nm and 800 nm. Alternatively, in some embodiments, the light conversion material 1321 is configured to convert X-rays into visible light in a wavelength range between 500 nm and 600 nm. The transparent conductive material 1322 is configured to have a shielding effect to suppress the interference of external static electricity on the light sensor 100 , and avoid the problem that visible light cannot pass through the transparent conductive material 1322 and reach the light sensing element 120 . Since the transparent conductive material 1322 is formed to envelop the light conversion material 1321 , it is possible to avoid adding an additional photomask during the manufacturing process to increase the cost of the manufacturing process.

In some embodiments, the layer of light converting material 130 has a thickness T ₁₃₀ . In some embodiments, thickness T ₁₃₀ is in a range between 20 μm and 1000 μm. In some embodiments, the light conversion material 1321 may be a phosphor. In some embodiments, as shown in FIG. 3 , the light converting material 1321 has an average diameter D ₁₃₂₁ . In some embodiments, the average diameter D ₁₃₂₁ is in a range between 10 μm and 100 μm. In some embodiments, the material of the light conversion material 1321 may be, for example, gorizonium oxysulfide (GOS). The zinc oxysulfide can be, for example, cerium-doped gadolinium oxysulfide (Gd ₂ O ₂ S(Tb)), gadolinium-doped gadolinium oxysulfide (Gd ₂ O ₂ S(Pr)) or cerium-doped gadolinium oxysulfide (Gd ₂ O 2 S(Tb) _2S (Ce)). In some embodiments, the material of the light conversion material 1321 can be, for example, cesium lead bromide (CsPbBr ₃ ), thallium-doped sodium iodide (NaI(Tl)), thallium-doped cesium iodide (CsI(Tl)), Sodium-doped cesium iodide (CsI(Na)), europium-doped lithium iodide (LiI(Eu)), bismuth germanate (Bi ₄ Ge ₃ O ₁₂ ; BGO), cadmium tungstate (CdWO ₄ ), silver-doped Heterozinc sulfide (ZnS(Ag)), gadolinium silicate (Gd ₂ SiO ₅ ; GSO), yttrium aluminum perovskite (YAlO ₃ ; YAP), yttrium aluminum garnet (Y ₃ Al ₅ O ₁₂ ; YAG), silicon Cerium lutetate (Lu _2(1-x) Ce _2x SiO ₄ ; LSO), aluminum perovskite (LuAlO ₃ ; LuAP), lanthanum bromide (LaBr ₃ ), or other suitable materials. In some embodiments, transparent conductive material 1322 has a thickness T ₁₃₂₂ as shown in FIG. 3 . In some embodiments, thickness T ₁₃₂₂ is in a range between 0.01 μm and 5 μm. In some embodiments, the material of the transparent conductive material 1322 can be, for example, gold (Au), silver (Ag), platinum (Pt), copper (Cu), aluminum (Al), chromium (Cr), palladium (Pd), Rhodium (Rh), indium tin oxide (Indium Tin Oxide; ITO), antimony doped tin oxide (Antimony doped Tin Oxide; ATO), fluorine doped tin oxide (Fluorine doped Tin Oxide; FTO), aluminum doped tin oxide Zinc (Aluminum doped Zinc Oxide; AZO), gallium doped Zinc Oxide (GZO), indium doped Zinc Oxide (IZO), poly 3,4-ethylenedioxythiophene-poly Styrenesulfonic acid (Poly(3,4-ethylenedioxythiophene)-Poly(styrenesulfonate); PEDOT:PSS) or other suitable materials.

With the aforementioned structural configuration, when X-rays from the outside are incident on the light sensor 100, the light-converting material 1321 of the light-converting unit 132 in the light-converting material layer 130 converts the X-rays into visible light, and the visible light reaches the light-sensing element. 120. After the photo-sensing element 120 receives visible light, the PIN diode 121 generates a current, and the current flows from the photo-sensing element 120 to the thin film transistor 110 , and passes through the thin film transistor 110 to the data line DL. At the same time, the transparent conductive material 1322 produces a shielding effect to effectively suppress the influence of external static electricity. Since the light sensor 100 is provided with the reflective layer 140 , visible light can be repeatedly reflected in the light sensor 100 without escaping from the light sensor 100 . In this way, the light sensor 100 provided with the light conversion material layer 130 and the reflective layer 140 can increase the efficiency of visible light being received by the light sensing element 120 , thereby improving the image quality.

In some embodiments, the material of the substrate S may be, for example, glass or similar materials. In some implementations, the material _of the gate insulating layer GSN may be, for example, silicon nitride ( _SixNy ) or similar materials. In some embodiments, the material of the channel layer AS may be, for example, amorphous silicon (Amorphous Silicon) or similar materials. In some embodiments, the light conversion material layer 130 can be made of at least deionized water (Deionized Water; DI Water), isopropyl alcohol (Isopropyl Alcohol), surfactant (for example: SURFYNOL ^® ), polyvinyl alcohol (Polyvinyl Alcohol) and uranium Doped sulfur oxide gadolinium (Gd ₂ O ₂ S (Tb)) composition. In some embodiments, the photoconversion material layer 130 includes 45 to 50 weight percent deionized water, 40 to 45 weight percent isopropanol, 1.5 weight percent surfactant, 4.5 to 5.0 weight percent % polyvinyl alcohol and 4.5% to 5.0% by weight of cerium-doped gadolinium oxysulfide. In some embodiments, the material of the reflective layer 140 may be, for example, titanium dioxide (TiO ₂ ) or similar materials. In some embodiments, the transparent conductive material 1322 can be formed to wrap the light conversion material 1321 by, for example, core-shell technology or other suitable methods. In some embodiments, the reflective layer 140 in FIG. 2 is formed by a deposition process or other suitable methods.

In some implementations, as shown in FIG. 2 , the photosensor 100 further includes a barrier layer BP1 , a barrier layer BP2 and a barrier layer BP3 . The barrier layer BP1 , the barrier layer BP2 and the barrier layer BP3 are disposed as insulating layers between the metal material and the semiconductor material. In some implementations, as shown in FIG. 2 , the barrier layer BP1 is located between the gate insulating layer GSN and the light sensing element 120 . In some embodiments, the barrier layer BP1 has an opening O _BP1 configured to form the PIN diode 121 thereon. In some embodiments, as shown in FIG. 2 , the barrier layer BP2 is located between the thin film transistor 110 and the common electrode line M3 and between the light sensing element 120 and the common electrode line M3 . In some implementations, as shown in FIG. 2 , the barrier layer BP3 is located between the common electrode line M3 and the light conversion material layer 130 .

Please refer to Figure 4. FIG. 4 is a cross-sectional view of a light sensor 100A according to an embodiment of the present disclosure. As shown in FIG. 4 , the structural configuration of the optical sensor 100A is substantially similar to that of the optical sensor 100 . The difference between the photo sensor 100A and the photo sensor 100 is that the photo sensor 100A further includes a metal layer M4 and a protection layer 150 . And the light sensor 100A does not include the reflective layer 140 . Metal layer M4 is configured to reflect visible light. As shown in FIG. 4 , the metal layer M4 is located above the thin film transistor 110 and the light sensing element 120 . In some embodiments, as shown in FIG. 4 , the passivation layer 150 is located at least on the metal layer M4 . In some embodiments, the protection layer 150 in FIG. 4 is configured to prevent oxidation of the metal layer M4.

Please continue to refer to Figure 4. In some embodiments, as shown in FIG. 4 , the light sensor 100C includes two passivation layers 150 , and the metal layer M4 is located between the two passivation layers 150 . Two protection layers 150 are configured to provide protection for the metal layer M4. In some embodiments, one of the two protection layers 150 is located above the metal layer M4, and the other of the two protection layers 150 is located below the metal layer M4. .

In some embodiments, the metal layer M4 may be silver (Ag), aluminum (Al), or other suitable materials. In some embodiments, the material of the protective layer 150 may include Parylene or other suitable materials. In some embodiments, the protection layer 150 in FIG. 4 can be formed by chemical vapor deposition (Chemical Vapor Deposition; CVD) process or other suitable methods.

Please refer to Figure 5. FIG. 5 is a cross-sectional view of a light sensor 100B according to an embodiment of the present disclosure. As shown in FIG. 5 , the structural configuration of the optical sensor 100B is substantially similar to that of the optical sensor 100 . The difference between the light sensor 100B and the light sensor 100 is that the light sensor 100B further includes a protection layer 150 and an adhesive layer 160 . Moreover, the reflective layer 140 in the light sensor 100B is bonded to the protective layer 150 through the adhesive layer 160 . As shown in FIG. 5 , the light sensor 100B includes a protective layer 150 . In some embodiments, the protective layer 150 in FIG. 5 is located on the light conversion material layer 130 and configured to prevent the light conversion units 132 of the light conversion material layer 130 from falling off. In some embodiments, as shown in FIG. 5 , the adhesive layer 160 is located between the reflective layer 140 and the protective layer 150 .

Please continue to refer to Figure 5. In some embodiments, as shown in FIG. 5 , the light sensor 100B includes a protective layer 150 . In some embodiments, the protection layer 150 is located between the light conversion material layer 130 and the adhesive layer 160 .

In some embodiments, the protective layer 150 in FIG. 5 can be formed by a chemical vapor deposition (Chemical Vapor Deposition; Chemical Vapor Deposition; CVD) process or other suitable methods. In some embodiments, the material of the adhesive layer 160 may include optical clear adhesive (OCA) or other suitable materials.

Please refer to Figure 6. FIG. 6 is a cross-sectional view of a light sensor 100C according to an embodiment of the present disclosure. As shown in FIG. 6 , the structural configuration of the optical sensor 100C is substantially similar to that of the optical sensor 100A. The difference between the photo sensor 100C and the photo sensor 100A is that the photo sensor 100C does not include the barrier layer BP3. In this embodiment, the transparent conductive material 1322 has the same potential as the common electrode line M3.

In some embodiments, as shown in FIG. 6 , the barrier layer BP2 is located between the light conversion material layer 130 and the light sensing element 120 . In some embodiments, the protective layer 150 in FIG. 6 can be formed by chemical vapor deposition (Chemical Vapor Deposition; CVD) process or other suitable methods. In some embodiments, the material of the metal layer M4 can be any suitable metal or other suitable materials.

Please refer to Figure 7. FIG. 7 is a cross-sectional view of a light sensor 100D according to an embodiment of the present disclosure. As shown in FIG. 7 , the structural configuration of the optical sensor 100D is substantially similar to that of the optical sensor 100B. The difference between the photo sensor 100D and the photo sensor 100B is that the photo sensor 100D does not include the barrier layer BP3. In this embodiment, the transparent conductive material 1322 has the same potential as the common electrode line M3.

Please refer to Figure 8. FIG. 8 is a cross-sectional view of a light sensor 100E according to an embodiment of the present disclosure. As shown in FIG. 8, the structural configuration of the optical sensor 100E is substantially similar to that of the optical sensor 100D. The difference between the photo sensor 100E and the photo sensor 100D is that the photo sensor 100E further includes a metal layer M4. As shown in FIG. 8 , the metal layer M4 is located directly above the light sensing element 120 . In other words, the metal layer M4 is only located directly above the light sensing element 120 but not above the TFT 110 . In some embodiments, as shown in FIG. 8 , the metal layer M4 is at least located between the light conversion material layer 130 and the reflective layer 140 . In some embodiments, as shown in FIG. 8 , the metal layer M4 is located between the light conversion material layer 130 and the protective layer 150 . As shown in FIG. 8 , the reflective layer 140 is bonded to the protective layer 150 through the adhesive layer 160 . In this embodiment, the protection layer 150 is configured to prevent the oxidation of the metal layer M4 and prevent the light conversion unit 132 of the light conversion material layer 130 from falling off. In this embodiment, the transparent conductive material 1322 has the same potential as the common electrode line M3.

Please continue to refer to Figure 8. In some embodiments, the metal layer M4 is located on the light conversion material layer 130 . In some embodiments, as shown in FIG. 8 , the light sensor 100E includes a protective layer 150 . In some embodiments, as shown in FIG. 8 , the protective layer 150 is blanket-deposited on the upper surfaces of the light conversion material layer 130 and the metal layer M4 . In some embodiments, the adhesive layer 160 is located on the protective layer 150 , and the reflective layer 140 is located on the adhesive layer 160 .

In some embodiments, the protection layer 150 in FIG. 8 can be formed by chemical vapor deposition (Chemical Vapor Deposition; CVD) process or other suitable methods.

From the above detailed description of the specific embodiments of the present disclosure, it can be clearly seen that in the photosensor of the present disclosure, since the photosensor includes a photoconverting material layer with a photoconverting material, the light incident on the photosensitive The detector's X-rays can be converted to visible light in the wavelength range between 300 nm and 800 nm. In the light sensor of the present disclosure, since the transparent conductive material wraps the photo-converting material, it is possible to avoid adding an additional photomask during the manufacturing process and thus increasing the cost of the manufacturing process. In the light sensor of the present disclosure, since the transparent conductive material is transparent, it can avoid affecting the penetration of visible light. With the light sensor of the present disclosure, visible light can be received by the light sensing element more efficiently to improve image quality.

Although the present disclosure has been disclosed above in terms of implementation, it is not intended to limit this disclosure. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of this disclosure. Therefore, the protection of this disclosure The scope shall be defined by the scope of the appended patent application.

100, 100A, 100B, 100C, 100D, 100E: light sensor 110: thin film transistor 120: light sensing element 121: PIN diode 122: upper electrode 123: lower electrode 130: light conversion material layer 132: light conversion Unit 1321: light conversion material 1322: transparent conductive material 140: reflective layer 150: protective layer 160: adhesive layer AS: channel layer BP1, BP2, BP3: barrier layer DL: data line D ₁₃₂₁ : diameter GSN: gate insulating layer I-I': section line M1: gate line M2: source/drain region M2D: drain M2S: source M3: common electrode line M4: metal layer O _BP1 : opening S: substrate T ₁₃₀ , T ₁₃₂₂ : thickness

In order to make the above and other purposes, features, advantages and embodiments of the present disclosure more comprehensible, the accompanying drawings are described as follows: FIG. 1 shows a top view of a light sensor according to an embodiment of the present disclosure. FIG. 2 shows a cross-sectional view of a light sensor according to an embodiment of the present disclosure. FIG. 3 is a schematic diagram of a light conversion unit according to an embodiment of the present disclosure. FIG. 4 is a cross-sectional view of a light sensor according to an embodiment of the present disclosure. FIG. 5 shows a cross-sectional view of a light sensor according to an embodiment of the present disclosure. FIG. 6 shows a cross-sectional view of a light sensor according to an embodiment of the present disclosure. FIG. 7 shows a cross-sectional view of a light sensor according to an embodiment of the present disclosure. FIG. 8 shows a cross-sectional view of a light sensor according to an embodiment of the present disclosure.

Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

100: light sensor

110: thin film transistor

120: Light sensing element

121: PIN diode

122: Upper electrode

123: Lower electrode

130: light conversion material layer

132: Optical conversion unit

140: reflective layer

AS: channel layer

BP1, BP2, BP3: barrier layer

GSN: gate insulating layer

M2: source/drain region

M2D: Drain

M2S: source

M3: common electrode wire

O _BP1 : Opening

S: Substrate

T ₁₃₀ : Thickness

Claims (16)

A light sensor comprising: a substrate; a gate line located above the substrate; a data line located above the substrate; A thin film transistor, a gate of the thin film transistor is electrically connected to the gate line, and a drain of the thin film transistor is electrically connected to the data line; a light sensing element, the lower electrode of the light sensing element is electrically connected to a source of the thin film transistor; a common electrode line, located above the substrate, and electrically connected to an upper electrode of the light sensing element; and A photo-converting material layer, located above the thin film transistor and the photo-sensing element, includes: a light conversion material; and A transparent conductive material wraps the light conversion material. The light sensor as claimed in claim 1, further comprising a barrier layer located between the light conversion material layer and the light sensing element. The photosensor as claimed in claim 1, wherein the photo-converting material layer has a thickness ranging from 20 μm to 1000 μm. The light sensor as claimed in claim 1, wherein the light conversion material has an average diameter in a range between 10 μm and 100 μm. The light sensor as claimed in claim 1, wherein the transparent conductive material has a thickness ranging between 0.01 μm and 5 μm. The light sensor as claimed in claim 1, further comprising a reflective layer on the light conversion material layer. The light sensor as claimed in claim 6, wherein a material of the reflective layer comprises titanium dioxide. The light sensor as claimed in claim 6, wherein a material of the reflective layer includes metal. The light sensor as claimed in claim 6, further comprising a first protection layer located on the light conversion material layer. The light sensor as claimed in claim 9, wherein a material of the first protective layer comprises parylene. The light sensor according to claim 9, further comprising an adhesive layer located between the reflective layer and the first protective layer. The light sensor as claimed in claim 1, further comprising a first protection layer and a second protection layer located on the light conversion material layer. The light sensor as claimed in claim 12, wherein a material of the first protection layer and the second protection layer comprises parylene. The light sensor as claimed in claim 12, further comprising a metal layer between the first passivation layer and the second passivation layer. The light sensor as claimed in claim 14, wherein the metal layer is located above the thin film transistor and the light sensing element. The light sensor according to claim 1, further comprising a metal layer directly above the light sensing element.

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