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TWI729448B - Device for removing harmful exhaust gas from plasma - Google Patents

Device for removing harmful exhaust gas from plasma Download PDF

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TWI729448B
TWI729448B TW108127985A TW108127985A TWI729448B TW I729448 B TWI729448 B TW I729448B TW 108127985 A TW108127985 A TW 108127985A TW 108127985 A TW108127985 A TW 108127985A TW I729448 B TWI729448 B TW I729448B
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池奥哲也
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日商康肯環保設備有限公司
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

本發明在於提供一種電漿去除有害排氣的裝置,用以使投入於熱分解塔的排氣全部量必定通過由電漿噴流所形成的高溫區域而確實地被分解。 The present invention is to provide a device for removing harmful exhaust gas with plasma, so that the entire amount of exhaust gas thrown into a thermal decomposition tower must pass through a high-temperature region formed by a plasma jet to be surely decomposed.

本發明是使複數的電漿噴流(P)朝向點(Q)集中的方法,從朝向排氣(H)的反應空間(D)所設置之複數的電漿噴流炬(2a、2b、(2c)),朝向上述反應空間(D)內的某點(Q)使各個電漿噴流(P)產生,從上述複數的電漿噴流炬(2a、2b、(2c))之間將排氣(H)朝向上述點(Q)進行供給。 The present invention is a method of concentrating a plurality of plasma jets (P) toward a point (Q), from a plurality of plasma jet torches (2a, 2b, (2c) installed toward the reaction space (D) of the exhaust gas (H) )), each plasma jet (P) is generated toward a certain point (Q) in the reaction space (D), and exhaust gas is exhausted from between the plurality of plasma jet torches (2a, 2b, (2c)) ( H) Supply toward the aforementioned point (Q).

Description

電漿去除有害排氣的裝置 Device for removing harmful exhaust gas from plasma

本發明,是關於由半導體製造過程所排出之排氣在熱分解製程中之電漿去除有害排氣的裝置的改良。 The present invention relates to an improvement of a device for removing harmful exhaust gas by plasma in the thermal decomposition process of exhaust gas discharged from the semiconductor manufacturing process.

在半導體或液晶等之電子裝置的製造過程中會使用各式各樣化合物的氣體,例如,如CF4及C2F6之全氟碳化物(perfluorocarbon)或是如NF3之不含碳的氟化物等之全氟化合物(perfluoro compound)(以下,稱為「PFC」)是被使用作為化學氣相沈積室(CVD chamber)的清潔氣體。又,於本專利說明書中,將含有全氟化合物的排氣稱為全氟化合物排氣或是PFC排氣。 Various compound gases are used in the manufacturing process of electronic devices such as semiconductors or liquid crystals, for example, perfluorocarbons such as CF 4 and C 2 F 6 or carbon-free ones such as NF 3 Perfluoro compounds such as fluorides (hereinafter referred to as "PFC") are used as cleaning gases for chemical vapor deposition chambers (CVD chambers). In addition, in this patent specification, exhaust gas containing perfluorinated compounds is referred to as perfluorinated compound exhaust gas or PFC exhaust gas.

其中,由於以CF4或C2F6為代表的全氟碳化物為非燃性,且化合物本身安定,所以已釋放於大氣中之情形時,會長期間不變化地滯留。在大氣中到消耗掉的壽命是CF4為50,000年、C2F6為10,000年,又,地球暖化係數(以CO2作為1的比較值)是CF4為4,400、C2F6為6,200(經過20年後的時間點),因而產生地球環境上無法放任之所謂溫室效應問題,故期望可確立將含有以CF4或C2F6為代表之全氟碳化物的PFC予以去除的手段。 Among them, since perfluorocarbons represented by CF 4 or C 2 F 6 are non-flammable and the compound itself is stable, if it is released into the atmosphere, it will stay unchanged for a long period of time. The lifespan to be consumed in the atmosphere is 50,000 years for CF 4 and 10,000 years for C 2 F 6. Furthermore, the global warming coefficient ( compared with CO 2 as 1) is 4,400 for CF 4 and 4,400 for C 2 F 6 6,200 (after 20 years), the so-called greenhouse effect that cannot be allowed on the global environment has arisen, so it is expected that PFC containing perfluorocarbons represented by CF 4 or C 2 F 6 can be removed means.

然而,由於PFC之中,尤其是全氟碳化物其C-F結合安定(結合能較大,為130kcal/mol),故分解不易,以燃燒式等之一般性的加熱分解方式是極難將PFC完全去除。例如,在單純的加熱分解中,C2F6之情形時,若要以切斷C-C結合鍵的分解方式來進行,若限制在處理溫度1,000℃,處理風量250公升/分鐘以下雖然能夠去除有害成份,不過CF4的話就必須切斷結合能最大的C-F,即使在上述風量中也必須要1,400~1,500℃左右的高溫。 However, due to the stable CF binding of PFCs, especially perfluorocarbons (the binding energy is 130kcal/mol), it is not easy to decompose. It is extremely difficult to complete the PFC by general thermal decomposition methods such as combustion. Remove. For example, in the case of simple thermal decomposition, in the case of C 2 F 6 , if the decomposition method is to cut off the CC bond, if the processing temperature is limited to 1,000 ℃, the processing air volume below 250 liters/min can remove the harmful For CF 4 , it is necessary to cut off the CF with the largest binding energy. Even in the above-mentioned air volume, a high temperature of about 1,400~1,500°C is required.

作為對如此之含有分解困難的PFC的半導體排氣進行分解處理的技術,被提案有以簡單的構成且以較少的能量消費量而可以確實地將含有CF4的PFC排氣予以熱分解的排氣處理系統(專利文獻1)。 As a technology for decomposing such a semiconductor exhaust gas containing PFC which is difficult to decompose, it is proposed that the PFC exhaust gas containing CF 4 can be thermally decomposed with a simple structure and a small amount of energy consumption. Exhaust gas treatment system (Patent Document 1).

該排氣處理系統,是以在熱分解塔的頂板部向下垂直地配置電漿噴流炬(torch),在非移動型電極間施加放電電壓使電弧產生,並且將工作氣體輸送於電弧而從陽極側垂直地使所謂大約10,000℃之高溫的電漿噴流(plasma jet)對齊一致於熱分解塔的中心軸並使電漿噴流噴出之方式進行。並且是以從外側朝向所產生之電漿噴流的陽極側的上游部附近,供給藉由水洗去除掉水溶性成分與粉塵且附加水分後的PFC排氣之方式進行。被供給的PFC排氣是一面螺旋旋轉在高溫之電漿噴流的周圍並一面朝向出口被排出,在此期間是在所謂大約10,000℃高溫之電漿噴流的周圍的高溫環境下被熱分解,而排出於出口洗滌器(scrubber)。藉此,對於以往以電熱加熱器無法分解的CF4 等亦可以迅速且不可逆地進行分解。 The exhaust gas treatment system is to arrange a plasma jet torch (torch) vertically downward on the top plate of the thermal decomposition tower, apply a discharge voltage between non-moving electrodes to generate an arc, and deliver working gas to the arc. The anode side vertically aligns the plasma jet with a high temperature of about 10,000°C on the central axis of the thermal decomposition tower and ejects the plasma jet. In addition, the PFC exhaust gas is supplied from the outside toward the vicinity of the upstream portion on the anode side of the generated plasma jet, and water-soluble components and dust are removed by washing with water, and water is added. The supplied PFC exhaust gas is helically rotated around the high-temperature plasma jet and discharged toward the outlet. During this period, it is thermally decomposed in the high-temperature environment surrounding the so-called high-temperature plasma jet at about 10,000°C. Discharged to the outlet scrubber (scrubber). With this, CF 4, etc., which cannot be decomposed by conventional electric heaters, can be decomposed quickly and irreversibly.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2005-205330號公報 [Patent Document 1] JP 2005-205330 A

然而,在如上述之排氣處理系統中,作為電漿去除有害排氣之裝置的熱分解塔卻有如下的問題點。 However, in the exhaust gas treatment system described above, the thermal decomposition tower as a device for removing harmful exhaust gas with plasma has the following problems.

如上所述,使PFC排氣從外側朝向細長垂直延伸之電漿噴流的上游部附近進行供給,並一面螺旋旋轉在其周圍,一面使之在此過程中熱分解,不過由於大約達10,000℃的電漿噴流為細長形狀,於其周圍所形成之1,400~1,500℃左右的高溫區域也必然成為細細長長。特別是,在熱分解塔的內面附近,離開電漿噴流處也會產生沒有到達上述高溫區域之溫度的空間。因此,排氣只要沒有全部都通過形成在電漿噴流周圍的高溫區域而被熱分解的話,就恐會有一部分從低溫區域內穿過,沒有被分解而直接釋放出。 As described above, the PFC exhaust gas is supplied from the outside toward the vicinity of the upstream portion of the elongated and vertically extending plasma jet, and it is spirally rotated around it, and it is thermally decomposed in the process. However, due to the temperature of approximately 10,000°C The plasma jet has a slender shape, and the high temperature area around 1,400~1,500°C formed around it will inevitably become slender and long. In particular, in the vicinity of the inner surface of the thermal decomposition tower, a space that does not reach the temperature of the above-mentioned high-temperature region is also generated away from the plasma jet. Therefore, as long as all the exhaust gas is not thermally decomposed by passing through the high-temperature region formed around the plasma jet, a part of the exhaust gas may pass through the low-temperature region and be directly released without being decomposed.

本發明是有鑑於如此的問題點所研創,其解決課題之目的,在於提供一種電漿去除有害排氣的方法及其裝置,用以使投入於該電漿去除有害排氣裝置之熱分解塔的排氣全部量必定通過由電漿噴流所形成的高溫區域而 確實地被分解。 The present invention is developed in view of such problems. The purpose of solving the problem is to provide a method and a device for removing harmful exhaust gas from plasma, which can be used to put into the thermal decomposition tower of the device for removing harmful exhaust gas from plasma. The entire exhaust gas must pass through the high temperature area formed by the plasma jet. It is definitely broken down.

請求項1所記載的發明(電漿去除有害排氣的方法),是使複數的電漿噴流P朝向點Q集中的方法,其特徵為:從朝向排氣H的反應空間D所設置之複數的電漿噴流炬2a、2b、(2c),朝向上述反應空間D內的某點Q使各個電漿噴流P產生,然後從上述複數的電漿噴流炬2a、2b、(2c)之間,將排氣H朝向上述點Q進行供給。 The invention described in claim 1 (a method for removing harmful exhaust gas with plasma) is a method for concentrating a plurality of plasma jets P toward a point Q, and is characterized in that the plurality of plasma jets P are installed from the reaction space D toward the exhaust gas H The plasma jet torches 2a, 2b, (2c) are directed toward a certain point Q in the reaction space D to generate each plasma jet P, and then from the plurality of plasma jet torches 2a, 2b, (2c), The exhaust gas H is supplied toward the aforementioned point Q.

請求項2所記載的發明(電漿去除有害排氣的方法),是使複數的電漿噴流P分散於點Q周圍之複數的點Q1、Q2、(Q3)的方法,其特徵為:從朝向排氣H的反應空間D所設置之複數的電漿噴流炬2a、2b、(2c),朝向上述反應空間D內的某點Q周圍之複數的點Q1、Q2、(Q3)以保持相互扭轉的位置關係之方式使各個電漿噴流P產生,然後從上述複數的電漿噴流炬2a、2b、(2c)之間,將排氣H朝向形成於上述複數的點Q1、Q2、(Q3)之間的高溫區域T進行供給。 The invention described in claim 2 (a method of removing harmful exhaust gas with plasma) is a method of dispersing a plurality of plasma jets P at a plurality of points Q1, Q2, (Q3) around the point Q, and is characterized by: The plurality of plasma jet torches 2a, 2b, (2c) set toward the reaction space D of the exhaust gas H are directed toward the plurality of points Q1, Q2, (Q3) around a certain point Q in the reaction space D to maintain each other The way of twisting the positional relationship causes each plasma jet P to be generated, and then from the plurality of plasma jet torches 2a, 2b, (2c), the exhaust gas H is directed toward the points Q1, Q2, (Q3) formed in the above-mentioned plurality of plasma jet torches 2a, 2b, and (2c). ) Is supplied in the high temperature region T between.

請求項3所記載的發明,是實現請求項1之方法的裝置(電漿去除有害排氣用的熱分解塔1),其特徵為,是由: 於內部具有排氣H之反應空間D的塔本體1a、及設置於上述塔本體1a之頂板部3之複數的電漿噴流炬2a、2b、(2c)、以及在上述複數的電漿噴流炬2a、2b、(2c)之間並設置於上述塔本體1a之頂板部3的排氣供給部29所構成;上述複數的電漿噴流炬2a、2b、(2c),是各別地配置而使從上述電漿噴流炬2a、2b、(2c)所各別產生的電漿噴流P朝向上述反應空間D內的點Q;上述排氣供給部29的噴出口29a,是以將排氣H朝向上述點Q進行供給的方式所配置。 The invention described in claim 3 is a device for realizing the method of claim 1 (thermal decomposition tower 1 for removing harmful exhaust gas from plasma), and is characterized by: A tower body 1a having a reaction space D of exhaust gas H inside, a plurality of plasma jet torches 2a, 2b, (2c), and a plurality of plasma jet torches arranged on the top plate portion 3 of the tower body 1a 2a, 2b, and (2c) are formed by an exhaust gas supply portion 29 provided on the top plate portion 3 of the tower body 1a; the plurality of plasma jet torches 2a, 2b, (2c) are arranged separately The plasma jets P respectively generated from the plasma jet torches 2a, 2b, (2c) are directed toward the point Q in the reaction space D; the jet port 29a of the exhaust gas supply part 29 is used to discharge the exhaust gas H It is arranged in such a way as to supply to the above-mentioned point Q.

請求項4所記載的發明,是實現請求項2之方法的裝置(電漿去除有害排氣用的熱分解塔1),其特徵為,是由:於內部具有排氣H之反應空間D的塔本體1a、及設置於上述塔本體1a之頂板部3之複數的電漿噴流炬2a、2b、(2c)、以及在上述複數的電漿噴流炬2a、2b、(2c)之間並設置於上述塔本體1a之頂板部3的排氣供給部29所構成;上述複數的電漿噴流炬2a、2b、(2c),是各別地配置而使從上述電漿噴流炬2a、2b、(2c)所各別產生的電漿噴流P朝向在上述反應空間D內的某點Q周圍所設之複數的點Q1、Q2、(Q3)保持相互扭轉的位置關係;上述排氣供給部29的噴出口29a,是以將排氣H朝向在上述複數的點Q1、Q2、(Q3)之間所形成的高溫區域T進行 供給的方式所配置。 The invention described in claim 4 is a device for realizing the method of claim 2 (pyrolysis tower 1 for removing harmful exhaust gas from plasma), and is characterized by: having a reaction space D of exhaust gas H inside The tower body 1a, and the plurality of plasma jet torches 2a, 2b, (2c), and the plurality of plasma jet torches 2a, 2b, (2c) are arranged between the above-mentioned plurality of plasma jet torches 2a, 2b, and (2c) provided on the top plate portion 3 of the above-mentioned tower body 1a The exhaust gas supply part 29 of the top plate part 3 of the tower body 1a is constituted; the plurality of plasma jet torches 2a, 2b, (2c) are separately arranged so that the plasma jet torches 2a, 2b, (2c) The plasma jets P respectively generated are directed to a plurality of points Q1, Q2, (Q3) set around a certain point Q in the reaction space D, maintaining a mutually twisted positional relationship; the exhaust gas supply part 29 The ejection port 29a is performed by directing the exhaust gas H toward the high temperature region T formed between the above-mentioned plural points Q1, Q2, and (Q3). Configured by the way of supply.

請求項5,是在請求項4中,從複數的電漿噴流炬2a、2b、(2c)所產生之電漿噴流P的高溫區域T,是共有上述複數的點Q1、Q2、(Q3)內的上述點Q。 Claim 5 is that in Claim 4, the high temperature region T of the plasma jet P generated from the plurality of plasma jet torches 2a, 2b, (2c) is the points Q1, Q2, (Q3) that share the above-mentioned plural numbers. Within the above point Q.

本發明,由於是從排氣H相對於複數的電漿噴流P的供給關係著手,因而使排氣H的全部量通過由複數的電漿噴流P所形成的高溫區域T,所以可使去除有害排氣H的效率飛躍性地提高。並且,相較於使複數的電漿噴流P的位置關係集中於點Q之情形,使複數的電漿噴流P的位置關係分散於其周圍之複數的點Q1、Q2、(Q3),可以使位在排氣H之反應空間D的高溫區域T更加擴開。又,於此情形時,由複數的電漿噴流P所形成的高溫區域T,係包含點Q,且其一部分為相互重疊極為重要。 The present invention starts from the supply relationship of the exhaust gas H with respect to the plurality of plasma jets P, so that the entire amount of the exhaust gas H is passed through the high temperature region T formed by the plurality of plasma jets P, so that harmful effects can be removed. The efficiency of exhaust gas H is dramatically improved. Moreover, compared to the case where the positional relationship of the plurality of plasma jets P is concentrated on the point Q, the positional relationship of the plurality of plasma jets P is dispersed at the plurality of points Q1, Q2, (Q3) around it, and the The high temperature area T located in the reaction space D of the exhaust gas H is further expanded. Furthermore, in this case, it is extremely important that the high temperature region T formed by the plurality of plasma jets P includes the point Q, and a part of which overlaps each other.

A:水處理裝置 A: Water treatment device

B:熱分解裝置 B: Thermal decomposition device

D:反應空間 D: reaction space

E:圓 E: circle

H:排氣 H: Exhaust

L:中心軸 L: central axis

M:水等(霧、加熱水蒸氣、循環用的水) M: Water, etc. (fog, heating steam, water for circulation)

P:電漿噴流 P: Plasma jet

Q:1點 Q: 1 point

Q1~Q3:周圍的點 Q1~Q3: surrounding points

S:半導體製造裝置(半導體成膜裝置) S: Semiconductor manufacturing equipment (semiconductor film forming equipment)

T:高溫區域 T: High temperature area

U:渦漩 U: Vortex

V:真空泵 V: Vacuum pump

X:(本發明的)排氣處理裝置 X: (invention) exhaust gas treatment device

1:熱分解塔 1: Thermal decomposition tower

1a:塔本體 1a: Tower body

1b:胴部 1b: carcass

1c:腳部 1c: feet

2(2a~2c):電漿噴流炬 2(2a~2c): plasma jet torch

3:頂板部 3: Top plate

4:水窪部 4: puddle

5:水壁 5: Water Wall

18:排氣導入配管 18: Exhaust gas introduction piping

19:排氣導入噴嘴 19: Exhaust gas inlet nozzle

20:水處理槽 20: Water treatment tank

21:蒸氣配管 21: Steam piping

21a:朝上的噴嘴口 21a: nozzle opening facing upward

22:排氣導入部 22: Exhaust introduction part

23:入口側的噴霧配管 23: Spray piping on the inlet side

23b:朝下的噴嘴口 23b: Nozzle orifice facing downward

25:入口側的充填物層 25: Filling layer on the inlet side

26:排氣管 26: Exhaust pipe

29:排氣供給部 29: Exhaust supply section

29a:噴出口 29a: Ejector

30:水分供給部 30: Water Supply Department

31:入口側的揚水配管 31: Pumping piping on the inlet side

34:入口側的揚水泵 34: Pump on the inlet side

37:溢流配管 37: Overflow piping

40:水槽 40: sink

41:頂板部 41: Top plate

42:溢流配管 42: Overflow piping

45:供水管 45: water supply pipe

60:出口洗滌器 60: Outlet scrubber

60a:洗滌器本體 60a: Scrubber body

61:出口側的揚水配管 61: Pumping piping on the outlet side

63:出口側的噴霧配管 63: Spray piping on the outlet side

63a:噴嘴口 63a: nozzle port

64:出口側的揚水泵 64: Pump on the outlet side

65:出口側的充填物層 65: Filling layer on the outlet side

67:排氣送風機 67: Exhaust blower

68:釋出至大氣用排氣管 68: Exhaust pipe for release to atmosphere

[第1圖]是本發明裝置之整體的流路圖。 [Figure 1] is a flow diagram of the entire device of the present invention.

[第2圖]是本發明之複數的電漿噴流為2個時之含有點Q的橫向斷面的平面圖。 [Figure 2] is a plan view of a transverse section including a point Q when there are two plural plasma jets of the present invention.

[第3圖]是第2圖之其他例之含有點Q的橫向斷面的平面圖。 [Fig. 3] is a plan view of a transverse section including point Q in another example of Fig. 2. [Fig.

[第4圖]是本發明之複數的電漿噴流為3個時之含有 點Q的橫向斷面的平面圖。 [Figure 4] is the inclusion of a plurality of plasma jets of the present invention when there are 3 Plan view of the transverse section of point Q.

[第5圖]是第4圖之其他例之含有點Q的橫向斷面的平面圖。 [Fig. 5] is a plan view of a transverse section including point Q in another example of Fig. 4. [Fig.

以下,按照圖示實施例說明本發明。第1圖是本發明的排氣處理裝置X。此等裝置是在半導體製造過程中所使用的裝置,例如,是以真空泵V吸引從CVD成膜裝置S所排出的排氣(排放廢氣)H並將之輸送到排氣處理裝置X,進行熱分解使之無害化後再釋放於大氣的設備。 Hereinafter, the present invention will be explained based on the illustrated embodiments. Figure 1 is an exhaust gas treatment device X of the present invention. These devices are used in the semiconductor manufacturing process. For example, the vacuum pump V sucks the exhaust gas (exhaust gas) H discharged from the CVD film forming device S and sends it to the exhaust gas treatment device X for heating. A device that decomposes and makes it harmless before releasing it into the atmosphere.

又,在先前技術的說明中,雖是以去除PFC排氣中的有害物質作為代表例來進行說明,但由於難分解性的排氣並不侷限於PFC排氣,所以本發明的處理對象氣體僅稱之為排氣H。 In addition, in the description of the prior art, although the removal of harmful substances in the PFC exhaust gas is used as a representative example, the exhaust gas that is difficult to decompose is not limited to the PFC exhaust gas. Therefore, the processing target gas of the present invention Just call it exhaust H.

第1圖的排氣處理裝置X,僅為其一例,是由獨立的水處理裝置A、以及於出口設置有洗滌器60的熱分解裝置B所構成。在此雖沒有圖示出,但水處理裝置A也可以與熱分解裝置B的水槽40一體地設置。 The exhaust gas treatment device X in FIG. 1 is just one example, and is composed of an independent water treatment device A and a thermal decomposition device B with a scrubber 60 at the outlet. Although not shown here, the water treatment device A may be provided integrally with the water tank 40 of the thermal decomposition device B.

第1圖之排氣處理裝置X的流路概略如以下所述。以真空泵V吸引從CVD成膜裝置S排出的排氣H,以連接該真空泵V與水處理裝置A的排氣導入配管18將排氣H送入水處理裝置A。在水處理裝置A中,將排氣H中所含之加水分解性的成分氣體予以加水分解而成為固態的加水分解產生物,並與所供給之水等(加水分解用的噴霧水或者加 熱水蒸氣)M一同去除。同時,伴隨排氣H所送入的粉塵亦同樣地被水洗去除。又,若含有氯等之水溶性氣體之情形時,亦同時由水等M所去除。 The outline of the flow path of the exhaust treatment device X in Fig. 1 is as follows. The exhaust gas H discharged from the CVD film forming apparatus S is sucked by the vacuum pump V, and the exhaust gas H is sent to the water treatment apparatus A through the exhaust gas introduction pipe 18 connecting the vacuum pump V and the water treatment apparatus A. In the water treatment device A, the water-decomposable component gas contained in the exhaust gas H is hydrolyzed to form a solid hydrolysis product, which is combined with the supplied water (spray water for hydrolysis or the addition of water). Hot water vapor) M is removed together. At the same time, the dust sent in with the exhaust gas H is also washed and removed by water in the same way. In addition, if it contains water-soluble gas such as chlorine, it is also removed by M such as water at the same time.

已去除加水分解性的成分氣體及粉塵等之後的排氣H,藉由排氣管26被送入熱分解塔1,在此被熱分解後,被輸送到鄰接之出口側的洗滌器60,將熱分解後的熱分解排氣H予以洗淨之後,成為無害的大氣釋放排氣H而釋放於大氣。 The exhaust gas H from which the hydrolyzable component gas and dust have been removed is sent to the thermal decomposition tower 1 through the exhaust pipe 26, where it is thermally decomposed, and then sent to the scrubber 60 on the adjacent outlet side. After the thermally decomposed exhaust gas H after thermal decomposition is cleaned, the exhaust gas H is released into a harmless atmosphere and released into the atmosphere.

排氣處理裝置X的水處理裝置A,是由:於內部設有排氣導入噴嘴19與入口側的充填物層25的水處理槽20、水分供給部30、蒸氣配管21、以及排氣管26所概略性地構成。 The water treatment device A of the exhaust treatment device X is composed of: a water treatment tank 20 with an exhaust gas introduction nozzle 19 and a filling layer 25 on the inlet side, a water supply unit 30, a steam pipe 21, and an exhaust pipe. It is roughly constituted by 26.

水處理槽20,是在中空容器中,於頂部的排氣導入部22設置有排氣導入噴嘴19,於底部貯存有循環用的水M。 The water treatment tank 20 is a hollow container. The exhaust gas introduction part 22 at the top is provided with an exhaust gas introduction nozzle 19, and the water M for circulation is stored at the bottom.

於排氣導入噴嘴19的下方,設置有連接於工廠之蒸氣供給配管(圖示省略)的蒸氣配管21。於蒸氣配管21,是以使朝上的噴嘴口21a夾隔著排氣導入噴嘴19的方式配置在其兩側,因此在排氣導入噴嘴19的兩側成為可以使加熱水蒸氣從朝上的噴嘴口21a向上噴出。 Below the exhaust gas introduction nozzle 19, a steam pipe 21 connected to a steam supply pipe (not shown in the figure) of a factory is provided. In the steam pipe 21, the upward nozzle opening 21a is arranged on both sides of the exhaust gas introduction nozzle 19 with the exhaust gas introduction nozzle 19 interposed therebetween. Therefore, on both sides of the exhaust gas introduction nozzle 19, it is possible to heat the steam from upward. The nozzle opening 21a ejects upward.

於蒸氣配管21之下方或者側方,排列地設置有入口側的噴霧配管23。於入口側的噴霧配管23設置有朝下的噴嘴口23b。該朝下的噴嘴口23b是配置在排氣導入噴嘴19的正下方,並從該朝下的噴嘴口23b使微細的噴霧水滴M呈放射狀朝下方灑落。 Below or on the side of the steam pipe 21, spray pipes 23 on the inlet side are arranged side by side. The spray pipe 23 on the inlet side is provided with a nozzle opening 23b facing downward. The downward nozzle opening 23b is arranged directly below the exhaust gas introduction nozzle 19, and fine spray water droplets M are sprayed radially downward from the downward nozzle opening 23b.

於入口側之噴霧配管23的下方,設置充填有塑膠製、或是陶瓷製、或是玻璃製之充填物(例如,泰勒氏充填物(TELLERETTE(註冊商標))或者拉西環(Raschig ring))的充填物層25。 Below the spray pipe 23 on the inlet side, a plastic, ceramic, or glass filler (for example, Tellerette (registered trademark)) or Raschig ring is installed. )的filling layer 25.

於充填物層25的下方空間,設置有從該空間拉出的排氣管26,該排氣管26是到達後述之熱分解塔50的排氣供給部29。 In the space below the filling layer 25, an exhaust pipe 26 drawn from the space is provided, and the exhaust pipe 26 is an exhaust gas supply part 29 that reaches the thermal decomposition tower 50 described later.

於入口側的噴霧配管23,連接有從水處理槽20的底部立起而構成水分供給部30之入口側的揚水配管31。於該入口側的揚水配管31設置有入口側的揚水泵34,用以將蓄積於水處理槽20之底部的循環用的水M供給給入口側的噴霧配管23。再者,於水處理槽20的底部,設置有用以維持循環用的水M之水位的溢流配管37,該溢流量的水是從外部所供給。 The spray pipe 23 on the inlet side is connected to a water pumping pipe 31 that stands up from the bottom of the water treatment tank 20 and constitutes the inlet side of the water supply unit 30. The water pumping pipe 31 on the inlet side is provided with a water pumping pump 34 on the inlet side for supplying the circulating water M stored in the bottom of the water treatment tank 20 to the spray pipe 23 on the inlet side. Furthermore, at the bottom of the water treatment tank 20, an overflow pipe 37 for maintaining the water level of the circulating water M is provided, and the overflow amount of water is supplied from the outside.

熱分解裝置B,是由:水槽40、及作為電漿去除有害排氣裝置的熱分解塔1、以及出口側的洗滌器60所構成。熱分解塔1與出口側的洗滌器60,是排列地立設在水槽40之上。 The thermal decomposition device B is composed of a water tank 40, a thermal decomposition tower 1 as a plasma removing harmful exhaust device, and a scrubber 60 on the outlet side. The pyrolysis tower 1 and the scrubber 60 on the outlet side are arranged on the water tank 40 in an upright manner.

熱分解塔1,是由塔本體1a,以及複數之非移動型的電漿噴流炬2所構成。電漿噴流炬是使用複數具,在上位概念使用時是以符號2表示,以個別表示時是以英文字母作為分枝號碼。 The thermal decomposition tower 1 is composed of a tower body 1a and a plurality of non-moving plasma jet torches 2. The plasma jet torch uses a plural number of tools, which is represented by the symbol 2 when used in the upper concept, and the English letter is used as the branch number when it is used individually.

塔本體1a為圓筒狀的構件,其上端形成為向上的圓錐形並以頂板部3封塞,於其中央頂部連接有接連於排氣管 26的排氣供給部29。塔本體1a的下端是朝向水槽40呈開口。設置於頂板部3的電漿噴流炬2為2具之情形時,是對稱地配置在排氣供給部29的兩側;為3具或3具以上之情形時,是以等角度設置在以排氣供給部29為中心的圓上。即3具之情形時是間隔120°。 The tower body 1a is a cylindrical member, the upper end of which is formed in an upward conical shape and is sealed with a top plate part 3, and the central top is connected to the exhaust pipe 26 of the exhaust gas supply part 29. The lower end of the tower body 1a is open toward the water tank 40. When there are two plasma jet torches 2 installed on the top plate part 3, they are symmetrically arranged on both sides of the exhaust gas supply part 29; when there are three or more, they are installed at equal angles. The exhaust gas supply part 29 is on the circle at the center. That is, in the case of 3 cases, the interval is 120°.

由於塔本體1a的頂板部3是形成向上的圓錐形,從各電漿噴流炬2所產生的電漿噴流P,會成為相對於塔本體1a的中心軸L呈傾斜。因此,塔本體1a的胴部1b,其內表面必須設置成足夠從電漿噴流P的前端遠離而不會受到熱影響的距離,因而粗胖地形成。並且,胴部1b的下端是縮小成漏斗狀,並與立設在水槽40之頂板部41的腳部1c連通而成一體化。 Since the top plate portion 3 of the tower body 1a is formed in an upward conical shape, the plasma jet P generated from each plasma jet torch 2 becomes inclined with respect to the central axis L of the tower body 1a. Therefore, the inner surface of the trunk portion 1b of the tower body 1a must be set at a distance far enough away from the front end of the plasma jet P without being affected by heat, and thus is formed thickly. In addition, the lower end of the body portion 1b is reduced to a funnel shape, and is connected to the leg portion 1c erected on the top plate portion 41 of the water tank 40 to be integrated.

胴部1b的外表面是由絕熱材料(圖示省略)所包覆。於塔本體1a的上端外周部分設有水窪部4,水從塔本體1a的上端溢流而於塔本體1a的內周面整面形成水壁5。於水窪部4供溢流的水是從外部所供給。 The outer surface of the body part 1b is covered with a heat insulating material (not shown). A water depression 4 is provided on the outer peripheral portion of the upper end of the tower main body 1a, and water overflows from the upper end of the tower main body 1a to form a water wall 5 on the entire inner peripheral surface of the tower main body 1a. The overflowing water in the puddle 4 is supplied from the outside.

電漿噴流炬2係使用複數具,於個別表示之情形時,符號以2a、2b、2c之方式標示英文字母作為分枝符號。電漿噴流炬2,係於內部具有電漿產生室(圖示省略),於電漿噴流炬2的下面中心部設有:用以使在電漿產生室內所產生的電漿噴流P噴出的電漿噴流噴出孔(圖示省略)。於電漿噴流炬2的側面上部,因應需要可以設置如氮氣的工作氣體輸送配管(圖示省略)。 The plasma jet torch 2 uses a plurality of tools. In the case of individual representation, the symbols are marked with English letters as branch symbols in the form of 2a, 2b, and 2c. The plasma jet torch 2 has a plasma generation chamber (not shown in the figure) inside. The plasma jet torch 2 is provided at the center of the lower surface of the plasma jet torch 2 to eject the plasma jet P generated in the plasma generation chamber Plasma jet ejection holes (not shown in the figure). On the upper side of the plasma jet torch 2, a working gas delivery pipe such as nitrogen (not shown in the figure) can be installed as required.

熱分解塔1與出口側之洗滌器60的底部係朝 水槽40呈開口;熱分解塔1的底部與出口側之洗滌器60的底部是由水槽40的頂板部41與循環用的水M之間的空間所連通。 The bottom of the thermal decomposition tower 1 and the scrubber 60 on the outlet side are facing The water tank 40 is open; the bottom of the thermal decomposition tower 1 and the bottom of the scrubber 60 on the outlet side are connected by the space between the top plate 41 of the water tank 40 and the circulating water M.

電漿噴流炬2的設置數目,最小為2具,在第4圖及第5圖中為3具。當然也可以設置3具以上。首先,對於設置2具之情形進行說明(第2圖及第3圖)。 The minimum number of plasma jet torches 2 is 2, and it is 3 in Figures 4 and 5. Of course, 3 or more can be installed. First, a description will be given of a case where two devices are installed (Figures 2 and 3).

電漿噴流炬2a、2b為2具之情形時,如上述般是以排氣供給部29為中心設置成左右對稱。 In the case of two plasma jet torches 2a and 2b, as described above, the exhaust gas supply part 29 is set in a bilateral symmetry.

來自左右電漿噴流炬2a、2b之電漿噴流P的噴出角度,在第2圖之情形時,是相對於通過在塔本體1a之頂部所設置之排氣供給部29的塔本體1a的中心軸L呈傾斜,並在中心軸L上以朝向排氣供給部29之正下方的某點Q之方式所設置。並且來自左右電漿噴流炬2a、2b的兩電漿噴流P在點Q交叉。兩電漿噴流P的前端是以對塔本體1a之胴部1b的內面不會有所影響的方式所設定。 The spray angle of the plasma jet P from the left and right plasma jet torches 2a, 2b, in the case of Figure 2, is relative to the center of the tower body 1a that passes through the exhaust gas supply part 29 provided at the top of the tower body 1a The axis L is inclined and is provided on the central axis L so as to face a certain point Q directly below the exhaust gas supply part 29. And the two plasma jets P from the left and right plasma jet torches 2a, 2b cross at a point Q. The front ends of the two plasma jets P are set so as not to affect the inner surface of the trunk 1b of the tower body 1a.

電漿噴流P的中心部分大約10,000℃,溫度隨著從中心部分離開而下降。包含上述中心部分,將形成在電漿噴流P全周圍之對象排氣H的可分解溫度區域(1,400℃以上的區域)作為高溫區域T,以虛線及部分陰影線表示。高溫區域T是比電漿噴流P的可視範圍更寬廣。此點,於後述的情形亦相同。 The central part of the plasma jet P is about 10,000°C, and the temperature drops as it moves away from the central part. The decomposable temperature region (a region above 1,400°C) of the target exhaust H formed in the entire periphery of the plasma jet P including the above-mentioned center portion is referred to as the high temperature region T, which is indicated by a dashed line and a partially hatched line. The high temperature region T is wider than the visible range of the plasma jet P. This point is the same in the case described later.

第3圖的情形,是兩電漿噴流P在上述點Q沒有交叉,而是以朝向:以點Q為中心,包含點Q之水平面上的圓E上的2點Q1、Q2之方式所設定。此情形下,若2點 Q1、Q2過於分離時,由於作為中心點之點Q的溫度可能會有不能達到熱分解溫度之情形,為了避免此情形故分別通過點Q1、Q2,或是朝向此等所產生之兩電漿噴流P的高溫區域T可以包含點Q的範圍。換言之,兩電漿噴流P的高溫區域T成為共有點Q。此點,亦會在後述的第5圖說明。 The situation in Figure 3 is that the two plasma jets P do not cross at the above point Q, but are set in such a way that the direction is set at two points Q1 and Q2 on the circle E on the horizontal plane containing the point Q with the point Q as the center. . In this case, if 2 points When Q1 and Q2 are too separated, the temperature of point Q as the center point may not reach the thermal decomposition temperature. To avoid this situation, pass through points Q1 and Q2 respectively, or face the two plasmas generated by these points. The high temperature region T of the jet P may include the range of the point Q. In other words, the high temperature region T of the two plasma jets P becomes the common point Q. This point will also be explained in Fig. 5 described later.

藉此,兩電漿噴流P的高溫區域T成為以點Q為中心並在其周圍擴開成比第2圖之情形更大的面狀。 Thereby, the high-temperature region T of the two plasma jets P is centered on the point Q and spreads around it in a larger surface shape than in the case of FIG. 2.

第4圖之情形,是電漿噴流P為3個,電漿噴流炬2a、2b、2c以排氣供給部29為中心以120°等間隔地設置之情形,並使電漿噴流P以朝向點Q噴出的方式所設定。3個電漿噴流P是從3方向交叉在點Q,而在電漿噴流P的全周圍形成高溫區域T。此情形時,該高溫區域T的上面是朝向點Q凹陷成漏斗狀,而呈現後述之包圍排氣H的狀態。 In the case of Figure 4, there are three plasma jets P, and the plasma jet torches 2a, 2b, and 2c are installed at equal intervals of 120° with the exhaust gas supply part 29 as the center, and the plasma jets P are directed Point Q is set by the way of spraying. The three plasma jets P intersect at point Q from three directions, and a high temperature area T is formed around the plasma jet P. In this case, the upper surface of the high temperature region T is recessed toward the point Q in a funnel shape, and assumes a state surrounding the exhaust gas H, which will be described later.

第5圖之情形,是3個電漿噴流P沒有交叉在上述點Q,而是以朝向以點Q為中心之水平面上的圓E上的3點Q1、Q2、Q3的方式所設定。此情形時,與第3圖同樣地,由於上述3點Q1、Q2、Q3若過於分離則作為中心點之點Q的溫度恐會有無法達到熱分解溫度之情形,為了避免此情形,故使分別通過點Q1、Q2、Q3的電漿噴流P、或是朝向此等所產生之電漿噴流P的高溫區域T成為能夠包含點Q的範圍。 In the case of Fig. 5, the three plasma jets P do not intersect at the aforementioned point Q, but are set to face three points Q1, Q2, and Q3 on the circle E on the horizontal plane centered on the point Q. In this case, as in Figure 3, if the above three points Q1, Q2, and Q3 are too separated, the temperature of the central point Q may not reach the thermal decomposition temperature. In order to avoid this situation, use The high temperature region T of the plasma jet P passing through the points Q1, Q2, and Q3, or the plasma jet P generated toward them, becomes a range that can include the point Q.

藉此,電漿噴流P的高溫區域T以點Q為中心並在其周圍擴開成為比第4圖之情形還大的面狀。此情形下,高溫 區域T的上面亦會在朝向點Q的漏斗狀產生凹陷。 Thereby, the high-temperature region T of the plasma jet P is centered on the point Q and expands around the point Q into a larger surface than that in the case of FIG. 4. In this case, the high temperature The upper surface of the area T will also be dented in a funnel shape towards the point Q.

又,點Q之距離排氣供給部29的位置,是位在電漿噴流P或是於其周圍所形成之高溫區域T能到達的範圍內,且是選取使電漿噴流P不會對塔本體1a造成損害之範圍內的位置。 In addition, the position of the point Q from the exhaust gas supply part 29 is within the reach of the plasma jet P or the high temperature region T formed around it, and is selected so that the plasma jet P does not interfere with the tower The position within the scope of the damage caused by the main body 1a.

排氣供給部29是如上述般地設置在塔本體1a之頂板部3的頂部,且到任一電漿噴流炬2的距離皆相等。並且排氣供給部29的噴出口29a,是以朝向上述點Q、或是朝向上述複數的點Q1、Q2、(Q3)之間的高溫區域T供給有害的排氣H的方式所配置。 The exhaust gas supply part 29 is arranged on the top of the top plate part 3 of the tower body 1a as described above, and the distance to any plasma jet torch 2 is equal. In addition, the discharge port 29a of the exhaust gas supply unit 29 is arranged to supply harmful exhaust gas H toward the above-mentioned point Q or toward the high-temperature region T between the above-mentioned plural points Q1, Q2, and (Q3).

水槽40是中空長方體般的構件,於其頂板部41排列地立設有上述熱分解塔1與後述的出口洗滌器60。水槽40,於底部裝滿循環用的水M,該水M與頂板部41之間形成為熱分解排氣H的流通路徑。並且,於水槽40設置有:用以將內部的水位保持於一定的溢流配管42、以及用以將與溢流的水M等量的水供給至水槽40的供水管45。 The water tank 40 is a hollow rectangular parallelepiped member, and the above-mentioned thermal decomposition tower 1 and the outlet scrubber 60 described later are standingly arranged on the top plate portion 41 of the water tank 40. The water tank 40 is filled with circulating water M at the bottom, and a flow path of the thermal decomposition exhaust gas H is formed between the water M and the top plate portion 41. In addition, the water tank 40 is provided with an overflow pipe 42 for keeping the internal water level constant, and a water supply pipe 45 for supplying the same amount of water as the overflowing water M to the water tank 40.

出口側的洗滌器60,是所謂的濕式洗滌器,以下說明其概略構造,其是由:立設於水槽40之頂板部41的直管型洗滌器本體60a、及出口側的揚水配管61、及設置於其中途之出口側的揚水泵64、及連接於上述揚水配管61並設置在洗滌器本體60a之內部的頂部附近的出口側的噴霧配管63、及設置於該噴霧配管63並朝向下噴灑鹼性液體、酸性液體等之藥液、或是水蒸氣或者水M之出口側的噴嘴口63a、及設置於出口側的噴嘴口63a的下方之用以使 氣液相接觸的出口側的充填物層65、及設置於洗滌器本體60a之頂部的排氣送風機67、以及設置於該排氣送風機67的釋出至大氣用排氣管68所構成。噴灑後的上述藥液或是水M是被收容於水槽40。 The scrubber 60 on the outlet side is a so-called wet scrubber. The schematic structure of the scrubber 60 is described below. It consists of a straight-tube scrubber body 60a erected on the top plate portion 41 of the water tank 40, and a pumping pipe 61 on the outlet side. , And a water pump 64 installed on the outlet side in the middle, and a spray pipe 63 on the outlet side connected to the water pumping pipe 61 and installed near the top of the inside of the scrubber body 60a, and the spray pipe 63 installed in the direction of The nozzle port 63a on the outlet side of spraying alkaline liquid, acidic liquid, etc., or steam or water M, and the nozzle port 63a provided on the outlet side is used to make The filling layer 65 on the outlet side in contact with the gas and liquid phases, an exhaust blower 67 provided on the top of the scrubber body 60a, and an exhaust pipe 68 for releasing to the atmosphere provided on the exhaust blower 67 are formed. The sprayed liquid medicine or water M is contained in the water tank 40.

其次,對於第1圖之排氣處理裝置X的作用進行說明。從排氣處理裝置X的水處理裝置A至出口洗滌器60之排氣H的通流路徑,是藉由使排氣送風機67動作而保持負壓。並且如上述般地以真空泵V抽吸來自半導體製造裝置S的排氣H,經由排氣導入噴嘴19送入內部保持負壓的水處理裝置A。 Next, the function of the exhaust treatment device X in Fig. 1 will be described. The flow path from the water treatment device A of the exhaust gas treatment device X to the exhaust gas H of the outlet scrubber 60 is maintained by operating the exhaust gas blower 67 to maintain a negative pressure. In addition, the exhaust gas H from the semiconductor manufacturing apparatus S is sucked by the vacuum pump V as described above, and is sent to the water treatment apparatus A whose internal pressure is maintained through the exhaust gas introduction nozzle 19.

在水處理裝置A中,從蒸氣配管21之朝上的噴嘴口21a,加熱水蒸氣M在排氣導入噴嘴19的兩側上噴之同時,使入口側的揚水配管31的揚水泵34動作,將循環用的水M揚水來供給至入口側的噴霧配管23,且從朝下的噴嘴口23b亦將水作為細小的水滴M朝向下方如傘狀地噴灑。 In the water treatment device A, the heated steam M is sprayed on both sides of the exhaust introduction nozzle 19 from the nozzle opening 21a facing upward of the steam pipe 21, and the pump 34 of the pumping pipe 31 on the inlet side is activated. The circulating water M is pumped up and supplied to the spray pipe 23 on the inlet side, and the water is also sprayed downward in an umbrella shape as fine water droplets M from the nozzle opening 23b facing downward.

送入到水處理裝置A內的排氣H,係藉由上述加熱水蒸氣M與細小的水滴M來去除其中之加水分解性成分氣體與粉塵,作為水洗排氣H輸送至熱分解塔1。 The exhaust gas H sent into the water treatment device A is sent to the thermal decomposition tower 1 as the water-washed exhaust gas H by removing the water-decomposable component gas and dust by the above-mentioned heated steam M and the fine water droplets M.

先於上述水洗排氣H之供給,當將電漿噴流炬2的控制部(圖示省略)的電源開啟(ON)時,會在大氣壓下產生超高溫(大約10,000℃左右)的氣流,也就是產生非移動型的電漿噴流P,使各電漿噴流P從複數的電漿噴流炬2的電漿噴流噴出孔以如上述之位置關係地噴出於塔本體 1a內。 Prior to the supply of the above-mentioned washing exhaust gas H, when the power of the control unit (not shown) of the plasma jet torch 2 is turned on (on), an ultra-high temperature (about 10,000°C) airflow will be generated under atmospheric pressure. That is, a non-moving plasma jet P is generated, and each plasma jet P is sprayed out of the tower body in the above-mentioned positional relationship from the plasma jet ejection holes of the plurality of plasma jet torches 2 Within 1a.

由於排氣H是被朝向:作為高溫區域T之由該等電漿噴流P的交叉部分(第2圖、第4圖),換言之是由點Q、或者是由電漿噴流P(換言之為點Q1、點Q2、(點Q3))所包圍的部分或者所包夾的部分(第3圖、第5圖)進行吹入,所以所吹入之排氣H的全部量成為沒有漏出地通過由電漿噴流P所形成的高溫區域T,而使全部量被分解。 Since the exhaust gas H is directed: the intersection of the plasma jets P as the high temperature region T (Figures 2 and 4), in other words from the point Q or the plasma jet P (in other words, the point Q1, point Q2, (point Q3)) or the enclosed part (Figure 3, Figure 5) is blown in, so the entire amount of exhaust H blown in is passed through without leakage. The high temperature region T formed by the plasma jet P causes the entire amount to be decomposed.

在此,電漿噴流P如(第3圖、第5圖)所示處在扭轉的位置關係之情形時,藉由電漿噴流P的流動,在電漿噴流P之間、或是所包圍的範圍內於大氣中會產生渦漩U,從排氣供給部29的噴出口29a被吹入反應空間D的排氣H,係被捲入上述渦漩U並朝向作為中心點的點Q。 Here, when the plasma jet P is in a twisted positional relationship as shown in (Figures 3 and 5), the plasma jet P flows between or surrounded by the plasma jet P A vortex U is generated in the atmosphere within the range of, and the exhaust gas H blown into the reaction space D from the discharge port 29a of the exhaust gas supply part 29 is drawn into the vortex U and directed toward the point Q as the center point.

尤其是,使用3具電漿噴流炬2之情形時,此傾向更加強烈,且由於高溫區域T的上面為漏斗狀凹陷,排氣H沒有可逃逸的處所,所以顯示出比2具之情形還高的分解效率。 In particular, when three plasma jet torches 2 are used, this tendency is more intense, and since the upper surface of the high-temperature area T is a funnel-shaped depression, the exhaust gas H has no place to escape, so it appears to be better than the two cases. High decomposition efficiency.

然後,在此被熱分解後的熱分解排氣H被輸送至出口洗滌器60,充分地被洗淨並且下降至可釋放至大氣的溫度,並藉由排氣送風機67釋放於大氣。 Then, the thermally decomposed exhaust gas H that has been thermally decomposed here is sent to the outlet scrubber 60, is sufficiently cleaned and lowered to a temperature that can be released to the atmosphere, and is released to the atmosphere by the exhaust blower 67.

以上,是以本發明中之最佳例作為代表例來顯示,本發明並不受此等例示所限定。 Above, the best example of the present invention is shown as a representative example, and the present invention is not limited by these examples.

1:熱分解塔 1: Thermal decomposition tower

1a:塔本體 1a: Tower body

1b:胴部 1b: carcass

1c:腳部 1c: feet

2a、2b:電漿噴流炬 2a, 2b: plasma jet torch

3:頂板部 3: Top plate

4:水窪部 4: puddle

5:水壁 5: Water Wall

18:排氣導入配管 18: Exhaust gas introduction piping

19:排氣導入噴嘴 19: Exhaust gas inlet nozzle

20:水處理槽 20: Water treatment tank

21:蒸氣配管 21: Steam piping

21a:朝上的噴嘴口 21a: nozzle opening facing upward

22:排氣導入部 22: Exhaust introduction part

23:入口側的噴霧配管 23: Spray piping on the inlet side

23b:朝下的噴嘴口 23b: Nozzle orifice facing downward

25:入口側的充填物層 25: Filling layer on the inlet side

26:排氣管 26: Exhaust pipe

29:排氣供給部 29: Exhaust supply section

30:水分供給部 30: Water Supply Department

31:入口側的揚水配管 31: Pumping piping on the inlet side

34:入口側的揚水泵 34: Pump on the inlet side

37:溢流配管 37: Overflow piping

40:水槽 40: sink

41:頂板部 41: Top plate

42:溢流配管 42: Overflow piping

45:供水管 45: water supply pipe

60:出口洗滌器 60: Outlet scrubber

60a:洗滌器本體 60a: Scrubber body

61:出口側的揚水配管 61: Pumping piping on the outlet side

63:出口側的噴霧配管 63: Spray piping on the outlet side

63a:噴嘴口 63a: nozzle port

64:出口側的揚水泵 64: Pump on the outlet side

65:出口側的充填物層 65: Filling layer on the outlet side

67:排氣送風機 67: Exhaust blower

68:釋出至大氣用排氣管 68: Exhaust pipe for release to atmosphere

A:水處理裝置 A: Water treatment device

B:熱分解裝置 B: Thermal decomposition device

D:反應空間 D: reaction space

H:排氣 H: Exhaust

L:中心軸 L: central axis

M:水等(霧、加熱水蒸氣、循環用的水) M: Water, etc. (fog, heating steam, water for circulation)

Q:1點 Q: 1 point

S:半導體製造裝置(半導體成膜裝置) S: Semiconductor manufacturing equipment (semiconductor film forming equipment)

U:渦漩 U: Vortex

V:真空泵 V: Vacuum pump

X:排氣處理裝置 X: Exhaust treatment device

Claims (3)

一種電漿去除有害排氣的裝置,其特徵是由:於內部具有排氣之反應空間的塔本體、及設置於上述塔本體的頂板部之複數的電漿噴流炬、以及在上述複數的電漿噴流炬之間並設置於上述塔本體之頂板部的排氣供給部所構成;上述複數的電漿噴流炬,是各別地配置來使從上述電漿噴流炬所各別產生的電漿噴流朝向上述反應空間內的點;上述排氣供給部的噴出口,是以將排氣朝向上述點進行供給的方式所配置。 A device for removing harmful exhaust gas with plasma, which is characterized by: a tower body with a reaction space for exhaust gas inside, a plurality of plasma jet torches arranged on the top plate of the tower body, and the plurality of electric Between the plasma jet torches and set on the top plate of the tower body, the exhaust gas supply part is constituted; the plurality of plasma jet torches are separately arranged to make the plasma generated from the plasma jet torch separately The jet flow is directed to a point in the reaction space; and the ejection port of the exhaust gas supply unit is arranged to supply exhaust gas to the point. 一種電漿去除有害排氣的裝置,其特徵為,是由:於內部具有排氣之反應空間的塔本體、及設置於上述塔本體的頂板部之複數的電漿噴流炬、以及在上述複數的電漿噴流炬之間並設置於上述塔本體之頂板部的排氣供給部所構成;上述複數的電漿噴流炬,是各別地配置來使從上述電漿噴流炬所各別產生的電漿噴流朝向在上述反應空間內的某點周圍所設之複數的點保持相互扭轉的位置關係;上述排氣供給部的噴出口,是以將排氣朝向在上述複 數的點之間所形成的高溫區域進行供給的方式所配置。 A device for removing harmful exhaust gas with plasma, which is characterized by comprising: a tower body having a reaction space for exhaust gas inside, a plurality of plasma jet torches arranged on the top plate of the tower body, and the plurality of Between the plasma jet torches and the exhaust gas supply part provided on the top plate of the tower body; the above plural plasma jet torches are separately arranged to make the plasma jet torches generated from the above plasma jet torches. The plasma jet is directed to a plurality of points set around a certain point in the reaction space to maintain a mutually twisted positional relationship; the discharge port of the exhaust gas supply part is to direct the exhaust gas in the above-mentioned complex It is arranged to supply the high temperature area formed between several points. 如請求項2所述之電漿去除有害排氣的裝置,其中,從複數的電漿噴流炬所產生之電漿噴流的高溫區域,是共有上述複數的點內的上述點。 The apparatus for removing harmful exhaust gas from plasma according to claim 2, wherein the high temperature region of the plasma jets generated from the plurality of plasma jet torches is the above-mentioned point among the above-mentioned plural points in common.
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