200831178 九、發明說明 【發明所屬之技術領域】 本發明係關於使用非遷移型電漿噴流來分解包含 PFCs等之半導體製造廢氣以使之無害的除害裝置。 【先前技術】 半導體或液晶等製程中，係使用各種氟化物氣體作爲 洗滌氣體或蝕刻氣體等。此種氟化物被稱爲「PFCs等」 ，代表性氟化物可列舉CF4、C2F6、C3F8、C4F8、C5F8等 全氟碳化物、chf3等氫氟碳化物、以及SF6或NF3等無機 含氟化合物等。 此外，在半導體或液晶等製程所使用之各種PFCs等 ，係與作爲載體氣體或沖洗氣體等所使用之N2或Ar、或 作爲添加氣體所使用之〇2、H2或NH3、CH4等，一起當作 半導體製造廢氣（以下，僅稱爲「廢氣」。）排出。 此處，前述廢氣中PFCs等所占之比例，相對於N2或 Ar等其他氣體雖屬少量，但由於此PFCs等其地球暖化係 數（GWP)相對於C02爲數千〜數萬倍係非常大，大氣壽命 爲數千〜數萬年亦比C02長，因此即使少量排放至大氣中 其影響亦非常大。此外，已知由於以CF4或C2F6爲代表之 全氟碳化物，其C — F鍵結穩定（束縛能爲130 keal/mol係 較大），因此不易分解。因此，正進行各種技術開發以自 廢氣中除去使用過之PFCs等有害物。 作爲除去包含此種難分解性PFCs等廢氣中有害物之 -5 - 200831178 技術，已有提案一種電漿除害機（例如，參照專利文獻1) ，其係將放電電壓施加於電漿噴流炬之非遷移型電極間以 產生電弧，且將動作氣體供應至該電弧，以產生所謂非遷 移型電漿噴流，並朝向所產生之電漿噴流供應廢氣，藉此 以超高溫之電漿噴流將PFCs等熱分解。 使用該電漿噴流之除害機中，可藉由使用氮氣或氫氣 等雙原子分子作爲動作氣體，電漿噴流之溫度大致爲數千 〜數萬°c左右（此時，電漿噴流之周圍溫度亦爲數千°c)之 超高溫，將PFCs等特別是全氟碳化物等難分解性廢氣以 瞬時且不可逆之方式熱分解以除去有害物。 [專利文獻1]日本特開2005— 205330號公報 【發明內容】 [發明欲解決之課題] 然而，此種電漿除害機中，在使用輸出未達15kW之 小型電源，以構成小型、省空間性優異、且廢氣之除害效 率優異的裝置時，以1台除害裝置所能處理之廢氣量，最 大亦大槪在100公升/分左右。是以，以此種裝置係無法因 應「欲以1台除害裝置來處理超過100公升/分之大流量之 廢氣」的需求。 又，此種電漿除害機之電漿噴流炬的壽命，已確認大 槪爲3個月〜6個月左右，當達到電漿噴流炬之壽命時、因 某種原因該炬故障時、或因壽命或故障以外之某種原因造 成電漿噴流失火時，則必須使除害機停機以進行維修。因 -6- 200831178 此，幾乎無法使除害裝置長時間（例如6個月以上）連續運 轉。又，爲使電漿除害機停機以進行維修，亦必須停止半 導體製造設備之運作，如此一來亦會產生難以使半導體製 造裝置之運轉率提升的問題。 此外，本發明之主要課題係在於提供能確實且高效率 除去包含PFCs等大流量之半導體製造廢氣之有害物，並 可長時間連續運轉且省空間性亦優異之半導體製造廢氣的 除害裝置。 [用以解決課題之手段] 申請專利範圍第1項所記載之發明，係一種半導體製 造廢氣之除害裝置（1〇)，其特徵爲「具備：複數個除害單 元（12)，其係由電漿噴流炬（18)、與設於電漿噴流炬（18) 之電漿噴流噴出側，以圍繞電漿噴流（p)及朝向此電漿噴 流（P)供應之廢氣（F)，並在其內部進行廢氣（F)之熱分解的 反應筒（24)所構成’並透過設有用來開閉流路之入口閥 (40)的個別入口配管（38)以連接於半導體製造裝置（16); 以及個別出口配管（3 7)’其係設有用來開閉流路之出口閥 (35)以連通於各反應筒（24)之排出側端部」。 此發明中，由於複數個除害單元（1 2)，係透過設有用 以開閉流路之入口閥（40)之個別入口配管（38)’連接於半 導體製造裝置（16) ’因此可依由半導體製造裝置（16)所排 放之半導體製造廢氣（F)的流量’以開閉個別入口配管（38) 之入口閥（40)，來增減所使用之除害單元（12)的數量’且 200831178 亦可停止複數個除害單元（12)之一部分以作爲備用。 此外，藉由關閉入口閥（40)並關閉設於連通至反應筒 (24)之排出側端部之個別出口配管（37)的出口閥（35) ’可 使除害單元（12)完全脫離廢氣（F)之處理流程，無須停止除 害裝置（10)之運轉，即可維修最易因除害裝置（1〇)之運轉 而受損（亦即，最須維修）的除害單元（12)。因此，除害裝 置（10)便可長時間連續運轉。 又，由於使用具備電漿噴流炬（18)之電漿害裝機作爲 除害單元（12)，因此當然除CF4之熱分解外亦能以較少之 能源消耗量來熱分解半導體製程所產生之廢氣（F)。 此外，由於係以複數個除害單元（1 〇)構成除害裝置 (10)，因此相較於設置複數台以單一個除害單元（1〇)構成 之除害裝置，可設置成小型且省空間性優異之除害裝置。 申請專利範圍第2項所記載之發明，係如申請專利範 圍第1項所記載之半導體製造廢氣（F)之除害裝置（10)，其 中，「感測反應筒（24)內之溫度、壓力或電漿噴流（P)點火 狀態中之至少一項，且根據所感測之資訊以自動控制入口 閥（40)」。藉此，在除害單元（12)發生任何故障時，可立 即暫停在發生故障之除害單元（12)的廢氣處理，並將該廢 氣（F)之處理自動切換至其他除害單元（12)。是以，可防止 降低廢氣（F)之除害處理效率，並能減輕該除害裝置（10)之 運轉管理負荷。特別是，在進行此種自動控制時，如申請 專利範圍第3項所記載，「裝備有3座以上之除害單元（12) ，並使以鄰接之2座除害單元（12)所包挾之除害單元（12)經 -8- 200831178 常停止以作爲備用」較佳。 申請專利範圍第4項所記載之發明，係如申請專利範 圍第1至3項中任一項所記載之半導體製造廢氣（F)之除害 裝置（10)，其中，「設置成相對於η座（但η爲3以上之整 數）除害單元（12)，最多具備η— 1座（但η爲3以上之整數） 電源單元（20)，並透過開關（26)以切換連接於除害單元 (12)之電源單元（20)」，如此可使裝載於除害裝置（10)之 電源單元（20)的數量少於除害單元（12)的數量，藉此謀求 除害裝置（10)之小型化。 申請專利範圍第5項所記載之發明，係如申請專利範 圍第1至4項中任一項所記載之半導體製造廢氣（F)之除害 裝置（10)，其中，具備使以除害單元（12)分解處理之廢氣 (F)集合並進行洗淨及冷卻的出口洗滌器（14)，且設有將以 除害單元（12)分解處理前之廢氣（F)供應至出口洗滌器（14) 之入口側的常閉旁通配管（42)，如此藉由設置出口洗滌器 (14)，可更進一步提升排放至大氣中之已處理廢氣（F)的潔 淨度，且即使在除害單元（12)發生任何故障，亦可經由旁 通配管（42)，將廢氣（F)供應至出口洗滌器（14)之入口側， 藉此將對環境之負荷抑制在最小範圍內。 [發明效果] 根據本發明，由於複數個除害單元係透過設有用以開 閉流路之入口閥之個別入口配管連接於半導體製造裝置， 因此可依由半導體製造裝置所排放之半導體製造廢氣（F) -9- 200831178 的流量，以開閉個別入口配管之入口閥’來增減所使用之 除害單元的數量，且亦可停止複數個除害單元之一部分以 作爲備用。 此外，由於藉由關閉入口閥並關閉設於連通至反應筒 排出側端部之個別出口配管的出口閥’可使欲進行維修之 除害單元完全脫離廢氣之處理流程，因此維修時無須停止 除害裝置，以使除害裝置可長時間連續運轉。 又，由於係使用具備非遷移型電漿噴流炬之電漿除害 機作爲除害單元，因此當然除CF4之熱分解外亦能以較小 之能量消耗量確實熱分解半導體製程所產生之廢氣。 此外，由於係以複數個除害單元構成除害裝置，因此 可設置成小型且省空間性優異之除害裝置。 是以，可提供一種半導體製造廢氣之除害裝置，其能 確實且高效率除去包含PFCS等大流量之半導體製造廢氣 之有害物，並可長時間連續運轉且省空間性亦優異。 【實施方式】 以下，依據圖示實施例說明本發明。此外，以下說明 中，在以上階槪念表示各部位時，僅以阿拉伯數字表示而 不於各符號加字母之附屬號碼，在須要區別各部位時（亦 即表示下階槪念時）則將大寫字母之附屬號碼附加於阿拉 伯數字以示區別。 圖1係表示本實施例之半導體製造廢氣之除害裝置 (10)之槪要的構成圖。圖2係圖1之A - A線截面圖。如該 -10- 200831178 等圖式所示，本實施例之除害裝置（10)，大致係以複數個 (本實施例中爲3座）除害單元（12)及出口洗滌器（14)所構成 〇 除害單元（12)，係一種使包含由半導體製造裝置（16) 所排放之PFCs等廢氣（F)熱分解以除去有害物的裝置。如 圖3所示，大致係以電漿噴流炬（1 8)、電源單元（20)、動作 氣體供應單元（22)、以及反應筒（24)所構成之電漿除害機 〇 電漿噴流炬（18)，係用以產生高溫之電漿噴流（P)，具 有由黃銅等金屬材料構成且上下兩面開口之短筒狀炬體 (18a)。於該炬體（18a)之前端，連接設有陽極（18b)，於其 內部安裝有棒狀陰極（18c)。 陽極（18b)，係由銅或鎢等具有高導電性之高熔點金 屬所構成，並將電漿產生室（18d)凹設於內部之圓筒狀噴 嘴。於該陽極（18b)之下面中心部，貫通設有使在前述電 漿產生室（18d)所產生之電漿噴流（P)噴出之電漿噴流噴出 孔（18e)，於陽極（18b)側面之上部設有動作氣體供應口 (18f) 〇 陰極（18〇爲棒狀構件，其係由銅等具有高導電性之 高熔點金屬構成的本體部、與由混入钍或鑭之鎢構成且其 外徑向前端縮徑成紡錘狀的前端部所構成。該陰極（18〇 之前端部分，係配置於凹設在陽極（18b)內之電漿產生室 (18d) ° 此外，透過炬體（18a)將四氟乙烯樹脂或陶瓷等絕緣 -11 - 200831178 材料（未圖示）裝設於陽極（18 b)與陰極（18c)之間’以使該 等之間不會通電（短路）。又，陽極（18b)與陰極（18〇之內 部，設有冷卻水流通路徑（未圖示），以冷卻該等構件。 此外，於上述構成之陽極（18b)及陰極（18〇，連接有 用以施加既定放電電壓，以在陽極（18b)與陰極（18〇之間 產生電弧的電源單元（20)。 電源單元（20)，係將既定放電電壓施加於上述陽極 (18b)及陰極（18〇，以產生電漿弧，以所謂開關方式之直 流電源裝置爲較適宜。 此處，本實施例之除害裝置（1 0)中，如圖1所示，裝 備有與經常運轉之除害單元（12)相同數量的電源單元（20) ，該電源單元（20)係透過開關（26)連接於除害單元（12)。 是以，藉由操作該開關（26)，即可切換欲供應電力之除害 單元（12)。 動作氣體供應單元（22)，如圖3所示，係用以將氮、 氫、或氬等動作氣體（G)供應於陽極（Ub)之電漿產生室 (18d)內之單元，具有使儲藏於鋼瓶等（未圖示）之高壓動作 氣體（G)減壓之調壓器（22a)、與連通該調壓器（22a)與設於 陽極（1 8 b )之動作氣體供送口（ 1 8 f)的動作氣體供應配管 (22b)。又，於動作氣體供應配管（22b)，安裝有用以控制 供應至電漿產生室（1 8d)之動作氣體（G)量的流量控制手段 (28)。 反應筒（24)，係由可鑄性等耐火材料構成之兩端開口 的直管型構件’其一端（圖3之上端）透過廢氣供給器（3 〇)連 -12· 200831178 接於電漿噴流炬（18)之電漿噴流噴出孔（18e)側之端部’並 圍繞電漿噴流（P)與廢氣（F)，以在其內部進行廢氣（F)之熱 分解。此處，廢氣供給器（30)係以螺旋狀吹進廢氣（F)以供 應至電漿噴流（P)之噴出側上游部附近的構件。 此反應筒（24)之另一端，係已在反應筒（24)內完成分 解處理之廢氣（F)的排出端，如圖1所示，透過沖洗旋轉噴 淋器（3 2)連接於儲留藥液及水的水槽（34)，使藥液或水一 邊沿管體之內壁面旋轉一邊流下，使廢氣（F)中之粉塵不 會附著於該管體。又，於水槽（34)連接有具備出口閥（35) 之個別出口配管（3 7)之一端，該個別出口配管（3 7)之另一 端則連接於後述出口洗滌器（1 4)之入口側。亦即，個別出 口配管（37)，係連通於各反應筒（24)之排出側端部，並透 過該個別出口配管（37)將各反應筒（24)所排放之處理後之 廢氣（F)個別送至出口洗滌器（14)。此外，於個別出口配管 (3 7)安裝有用以朝向出口閥（3 5)噴射洗淨及冷卻用水的噴 灑手段（未圖示）。 圍繞電漿噴流（P)及廢氣（F)之該反應筒（24)中，於其 內部空間形成藉由高溫之電漿噴流（P)所加熱之高溫區域 。因此，往下流經反應筒（24)之廢氣（F)中，未與電漿噴流 (P)直接接觸之未分解廢氣（F)，亦會在通過該高溫區域時 被熱分解。 又，雖未圖示但於反應筒（24)安裝有感測器，用以感 測反應筒（24)內之溫度、壓力、或電漿噴流（P)點火狀態中 之至少1項，並使用由該感測器所感測之資訊，以自動控 -13- 200831178 制後述入口閥（40)之開閉。 本實施例之除害裝置（10)中，係將3座上述除害單元 (12)直立並排設於水槽（3 4)之上[亦即，使複數個反應筒 (24)接近](參照圖1及圖2) ’於各除害單元（12A)〜（12C)之 廢氣供給器（3 〇 )，分別連接有由流通廢氣（F)之主配管（3 6 ) 所分支之複數條（本實施例之情況爲3條）個別入口配管 (38A)〜（38C)。此處，於該個別入口配管（38A)〜（38C)分 別安裝有入口閥（4〇 A)〜（40 C)，藉由開閉此入口閥（40)可 對除害單元（1 2)控制廢氣之供應及停止。亦即，藉由將此 種入口閥（40)設於個別入口配管（38)，即可進行個別入口 配管（38)中廢氣（F)之流通控制。 又，旁通配管（42)之一端係經由常閉閥（42a)連接於主 配管（3 6)，此旁通配管（42)之另一端係連接於後述出口洗 滌器（14)之入口側。 此外，並排配置於水槽（34)上之複數個反應筒（24)之 外周，係以由岩綿或矽酸鈣等材料構成之保溫材料（H)圍 繞。 此外，如圖1所示，本實施例中，雖表示將4台半導體 製造裝置（16A)〜（16D)經由閥（44A)〜（44D)連接於主配管 (3 6)之情況，但連接於除害裝置（10)之半導體製造裝置 (16)之數量並非限定於此。 又，雖表示由半導體製造裝置（16)所排放之廢氣（F)， 一時集合於主配管（36)，之後再分配至個別入口配管（38) 之例，但亦可將個別入口配管（3 8)直接連接於半導體製造 -14- 200831178 裝置（16)，且使個別入口配管（3 8)彼此互相連通。亦即’ 只要是複數個除害單元（1 2 )分別經由個別入口配管（3 8 )連 接於半導體製造裝置（16)，且可控制各個別入口配管（38) 中廢氣（F)之流通的形態’其配管構造係任何構造均可。 出口洗滌器（14)，係用來水洗在除害單元（12)經熱分 解之廢氣（F)，以除去粉麈或水溶性成分來予以淨化’且 亦用來冷卻因熱分解而呈高溫之廢氣（F) ’以將廢氣導入 口（46)設於下端部之直管型洗滌器本體（48)、及以與廢氣 (F)流通方向相對向之方式，自上方噴射藥液或水的向下 噴嘴（50)所構成。 此出口洗滌器（14)，亦與除害單元（12)同樣地係直立 設於水槽（3 4)上，並將由噴嘴（50)所噴出之藥液或水送入 水槽（3 4)。此外，於出口洗滌器（14)之頂部出口’經由通 氣管（5 2)，連接有將處理後之廢氣（F)排放於大氣中之排氣 扇（54)。 當使用以上所構成之本實施例之除害裝置（1 〇)，以除 去廢氣（F)之有害物時，首先，開啓未圖示之除害裝置（10) 之電源，以使欲使之運轉之除害單元（12)[圖1所示例中爲 除害單元（12A)及（12C)]之流量控制手段（28)動作，以將動 作氣體（G)送至電漿產生室（18d)內。 接著，切換開關（26)以連接欲使其運轉之除害單元 (12)與電源單元（20)，以使電源單元（20)動作，並開啓除 害單元（12)之電漿噴流點火開關（未圖示），以將電壓施加 於電漿噴流炬（18)之電極（18b)、(18 c)之間，使電漿噴流 -15- 200831178 (P)由電漿噴流噴出孔（18e)噴出。 接著，當反應筒（24)內之溫度達到可除去廢氣（F)之有 害物之既定溫度時，即開啓個別入口配管（3 8)之入口閥 (4 0)[圖1所示例中爲設於個別配管（38 A)及（38 C)之閥（40 A) 及（40C)]，以將廢氣（F)供應於反應筒（24)內。如此一來’ 透過廢氣供給器（30)供應於反應筒（24)內之廢氣（F)便圍繞 電漿噴流（P)以螺旋狀流下，並在反應筒（24)內被熱分解。 如以上方式，以除害單元（12)熱分解之廢氣（F)，經由 個別出口配管（3 7)集合於出口洗滌器（14)之廢氣導入口 (4 6)，並在該洗滌器（14)經水洗及冷卻後，經由排氣扇 (5 4 )排放於大氣中。 根據本實施例之除害裝置（10)，由於複數個除害單元 (12)係透過設有用以開閉流路之閥（40)的個別配管（38)， 連接於半導體製造裝置（1 6)，因此可依由半導體製造裝置 (16)所排放之廢氣（F)之流量來開閉閥（40 A)〜（40C)，以增 減所使用之除害單元（12)之數量。亦即，在除害單元（12) 之最大廢氣處理能力爲1 〇〇公升/分之情況下，藉由並排2 台此種除害單元，即可處理200公升/分之廢氣（F)。又， 亦可停止複數個除害單元（1 2)之一部分的運轉以作爲備用 〇 此外，藉由關閉入口閥（40)且亦關閉設在連通於反應 筒（24)之排出側端部之個別出口配管（3 7)的出口閥（35)， 便可使除害單元（12)完全脫離廢氣（F)之處理流程，無須停 止除害裝置（10)之運轉，即可進行最易因除害裝置（10)之 -16- 200831178 運轉而受損（亦即，最須維修）之除害單元（12)的維修。因 此，除害裝置（10)便可長時間連續運轉。 又，由於係使用具備非遷移型電漿噴流炬（1 8)之電漿 除害機作爲除害單元（12)，因此當然除CF4之熱分解外亦 能以較小之能量消耗量確實分解半導體製程所產生之廢氣 (F) ° 此外，由於係以複數個除害單元（10)構成除害裝置 (1〇)，因此相較於設置複數台以單一除害單元（10)所構成 之除害裝置，可設置成小型且省空間性優異之除害裝置。 此外，由於設爲感測反應筒（24)內之溫度、壓力、或 電漿噴流（P)點火狀態中之至少1項，並根據所感測之資訊 自動控制入口閥（40)之開閉，因此可在除害單元（12)檢測 出任何故障時（具體而言，反應筒（24)內之溫度急遽降低 、反應筒（24)內之壓力急速改變時、或電漿噴流（P)失火時 等，立即中斷在發生故障之除害單元（12)之廢氣處理，且 將該廢氣（F)之處理自動切換至其他除害單元（12)。因此， 可防止降低廢氣（F)之除害處理效率，且能減輕除害裝置 (10)之運轉管理負荷。 此外，上述實施例中，雖表示設置3座除害單元（12) 之情況，但裝備於除害裝置（10)之除害單元（12)之數量， 只要是複數座即可，例如2座亦可或4座以上亦可。 又，上述例中，雖表示透過開關（26)對3座除害單元 (12)設置2座電源單元（20)之情況，但所設置之電源單元 (20)的數量並非限定於此，只要少於除害單元（12)之數量 -17- 200831178 ，特別是能保證作爲目標之廢氣處理能力的最少數量即可 。藉此，可使除害裝置（10)進一步更小型化。 又，雖表示將複數個除害單元（12)及出口洗滌器（14) 並排配置之情況（參照圖2)，但除害單元（12)及出口洗滌器 (14)之配置並非限定於此，只要是將複數座除害單元（12) 配置成互相接近者，可依除害裝置（10)設置空間的狀況適 當進行設計變更。然而，如本實施例，藉由將除害單元 (12)並排配置可改善空間之使用方便性。 又，上述實施例中，雖表示一體以保溫材料（H)圍繞 複數個反應筒（24)，藉此以高效率熱分解通過反應筒（24) 之廢氣（F)的例，但可依構成除害對象之廢氣（F)的種類， 個別以保溫材料（H)圍繞各反應筒（24)，亦可不設此種保 溫材料（H)。 再者，上述實施例中，雖表示將出口洗滌器（14)設於 除害裝置（10)之情況，但例如於後製程另設有廢氣處理製 程，除害裝置（10)僅進行PFCs之分解即可時，如圖4所示 ，亦可省略出口洗滌器（14)。 此外，視須要亦能設成以濕式洗滌器來洗淨導入於除 害單元（12)之廢氣（F)。 【圖式簡單說明】 [圖1 ]係表示本發明之一實施例之半導體製造廢氣之 除害裝置之槪要的構成圖。 [圖2 ]係圖1之A — A線截面圖。 -18- 200831178 [圖3]係表示本發明之除害單元之槪略的構成圖。 [圖4]係表示本發明之其他實施例之半導體製造廢氣 之除害裝置之槪要的構成圖。 【主要元件符號說明】 10 :除害裝置 1 2 :除害單元 1 4 :出口洗滌器 16:半導體製造裝置 1 8 :電漿噴流炬 20 :電源單元 22 :動作氣體供應單元 24 :反應筒 26 :開關 3 2 :旋轉噴淋器 34 :水槽 35 :出口閥 3 6 :主配管 3 7 :個別出口配管 3 8 :個別入口配管 40 :入口閥 44 :閥 46 :廢氣導入口 48 :洗滌器本體 -19- 200831178 5 0 :噴嘴 5 4 :排氣扇 F:半導體製造廢氣 Η :保溫材料 Ρ :電漿噴流 -20-BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a detoxification device that uses a non-migrating type plasma jet to decompose a semiconductor-made exhaust gas containing PFCs or the like to make it harmless. [Prior Art] In a semiconductor or liquid crystal process, various fluoride gases are used as a scrubbing gas or an etching gas. Such a fluoride is referred to as "PFCs or the like", and typical fluorides include perfluorocarbons such as CF4, C2F6, C3F8, C4F8, and C5F8, hydrofluorocarbons such as chf3, and inorganic fluorine-containing compounds such as SF6 or NF3. . In addition, various PFCs used in processes such as semiconductors or liquid crystals are used together with N2 or Ar used as a carrier gas or a flushing gas, or 〇2, H2 or NH3, CH4, etc. used as an additive gas. It is discharged as a semiconductor manufacturing exhaust gas (hereinafter, simply referred to as "exhaust gas"). Here, the proportion of PFCs and the like in the exhaust gas is small with respect to other gases such as N2 or Ar, but the global warming coefficient (GWP) of the PFCs is thousands to tens of thousands of times relative to CO 2 . Large, atmospheric life span of thousands to tens of thousands of years is also longer than C02, so even a small amount of emissions into the atmosphere has a very large impact. Further, it is known that since the perfluorocarbon represented by CF4 or C2F6 has a stable C-F bond (a binding energy of 130 keal/mol is large), it is not easily decomposed. Therefore, various technologies are being developed to remove harmful substances such as used PFCs from the exhaust gas. As a technique for removing harmful substances in exhaust gas such as such poorly decomposable PFCs, there has been proposed a plasma detoxification machine (for example, refer to Patent Document 1) which applies a discharge voltage to a plasma jet torch. Between the non-migrating electrodes to generate an arc, and supplying a working gas to the arc to generate a so-called non-migrating type plasma jet, and supplying the exhaust gas toward the generated plasma jet, thereby using an ultra-high temperature plasma jet Thermal decomposition of PFCs and the like. In the detoxification machine using the plasma jet, by using a diatomic molecule such as nitrogen or hydrogen as the operating gas, the temperature of the plasma jet is approximately several thousand to several tens of thousands of degrees (at this time, around the plasma jet) The temperature is also an ultra-high temperature of several thousand ° c), and the hardly decomposable exhaust gas such as PFCs, particularly perfluorocarbon, is thermally decomposed in an instantaneous and irreversible manner to remove harmful substances. [Patent Document 1] JP-A-2005-205330 [Summary of the Invention] [Problems to be Solved by the Invention] However, in such a plasma detoxification machine, a small power supply having an output of less than 15 kW is used to constitute a small-sized, provincial In the case of a device having excellent space and excellent exhaust gas decontamination efficiency, the amount of exhaust gas that can be handled by one detoxification device is also at most about 100 liters/min. Therefore, in such a device, it is not possible to cope with the demand for "a large amount of exhaust gas exceeding 100 liters per minute to be treated by one detoxification device". Moreover, the life of the plasma jet torch of the plasma decontamination machine has been confirmed to be about 3 months to 6 months. When the life of the plasma jet torch is reached, and the torch fails for some reason, If the plasma spray is lost due to some reason other than life or failure, the abatement machine must be shut down for maintenance. As a result of -6-200831178, it is almost impossible to continuously operate the abatement device for a long time (for example, 6 months or longer). Further, in order to stop the plasma detoxification machine for maintenance, it is also necessary to stop the operation of the semiconductor manufacturing equipment, which also causes a problem that it is difficult to increase the operation rate of the semiconductor manufacturing apparatus. In addition, the main object of the present invention is to provide a decontamination apparatus for semiconductor manufacturing exhaust gas which can reliably and efficiently remove harmful substances including semiconductor manufacturing exhaust gas having a large flow rate such as PFCs, and which can be continuously operated for a long period of time and which is also excellent in space saving. [Means for Solving the Problem] The invention described in the first aspect of the invention is a detoxification device (1〇) for manufacturing a semiconductor exhaust gas, characterized in that: "there are: a plurality of detoxification units (12), From the plasma jet torch (18) and the plasma jet discharge side of the plasma jet torch (18) to surround the plasma jet (p) and the exhaust gas (F) supplied toward the plasma jet (P), The reaction tube (24) in which the exhaust gas (F) is thermally decomposed is configured to pass through an individual inlet pipe (38) provided with an inlet valve (40) for opening and closing the flow path to be connected to the semiconductor manufacturing apparatus (16). And an individual outlet pipe (37) having an outlet valve (35) for opening and closing the flow path to communicate with the discharge side end of each reaction tube (24). In the present invention, a plurality of abatement units (12) are connected to the semiconductor manufacturing device (16) through individual inlet pipes (38) provided with an inlet valve (40) for opening and closing the flow path. The flow rate of the semiconductor manufacturing exhaust gas (F) discharged by the semiconductor manufacturing apparatus (16) is used to open and close the inlet valve (40) of the individual inlet piping (38) to increase or decrease the number of the abatement unit (12) used and '200831178' A portion of the plurality of abatement units (12) may also be stopped for use as a backup. Further, the abatement unit (12) can be completely detached by closing the inlet valve (40) and closing the outlet valve (35) provided to the individual outlet piping (37) connected to the discharge side end of the reaction cylinder (24). The treatment process of the exhaust gas (F) can repair the abatement unit that is most susceptible to damage (ie, the most maintenance) due to the operation of the decontamination device (1) without stopping the operation of the decontamination device (10) ( 12). Therefore, the detoxification device (10) can be continuously operated for a long time. Moreover, since the plasma-damping machine with the plasma jet torch (18) is used as the abatement unit (12), of course, in addition to the thermal decomposition of CF4, the semiconductor process can be thermally decomposed with less energy consumption. Exhaust gas (F). In addition, since the plurality of abatement units (1 〇) constitute the abatement device (10), the abatement device composed of a single abatement unit (1〇) can be set to be small and A space-saving device with excellent space. The invention described in claim 2 is the detoxification device (10) of the semiconductor manufacturing exhaust gas (F) according to the first aspect of the invention, wherein "the temperature in the reaction tube (24) is sensed, At least one of pressure or plasma jet (P) ignition status, and automatically controls the inlet valve (40) based on the sensed information. Thereby, when any failure occurs in the abatement unit (12), the exhaust gas treatment of the abatement unit (12) that has failed can be immediately suspended, and the treatment of the exhaust gas (F) is automatically switched to other abatement units (12). ). Therefore, it is possible to prevent the efficiency of the decontamination treatment of the exhaust gas (F) from being lowered, and to reduce the operational management load of the detoxification device (10). In particular, in the case of such automatic control, as described in item 3 of the scope of application, "there are three or more abatement units (12) equipped with two adjacent units (12) It is preferred that the abatement unit (12) is normally stopped as a backup after -8-200831178. The invention described in claim 4, wherein the invention provides a detoxification device (10) for manufacturing a semiconductor exhaust gas (F) according to any one of claims 1 to 3, wherein "provided to be relative to η The seat (but η is an integer of 3 or more) and the abatement unit (12) has at most η-1 (but η is an integer of 3 or more) power supply unit (20), and is connected to the victim through the switch (26). The power supply unit (20) of the unit (12) is such that the number of power supply units (20) mounted on the detoxification device (10) can be smaller than the number of the decontamination unit (12), thereby achieving the detoxification device (10). ) miniaturization. The invention according to claim 5, wherein the invention provides a detoxification device (10) for a semiconductor manufacturing exhaust gas (F) according to any one of claims 1 to 4, wherein the detoxification unit is provided (12) The exhaust gas (F) which is decomposed and processed to be washed and cooled, and is provided with an exhaust gas (F) which is supplied to the outlet scrubber before the decomposition treatment unit (12) is decomposed ( 14) The normally closed bypass pipe (42) on the inlet side, by which the outlet scrubber (14) is provided, the cleanliness of the treated exhaust gas (F) discharged into the atmosphere can be further improved, and even in the case of decontamination Any failure of the unit (12) can also be supplied to the inlet side of the outlet scrubber (14) via the bypass piping (42), thereby suppressing the load on the environment to a minimum. Advantageous Effects of Invention According to the present invention, since a plurality of abatement units are connected to a semiconductor manufacturing apparatus through individual inlet pipes provided with an inlet valve for opening and closing a flow path, the exhaust gas (F) can be manufactured according to the semiconductor discharged from the semiconductor manufacturing apparatus. -9- 200831178 The flow rate of the inlet valve of the individual inlet piping is used to increase or decrease the number of abatement units used, and one of the plurality of abatement units can also be stopped as a backup. In addition, since the detoxification unit to be repaired can be completely separated from the exhaust gas treatment process by closing the inlet valve and closing the outlet valve provided at the individual outlet piping connected to the discharge side end of the reaction cylinder, it is not necessary to stop the maintenance during maintenance. Harm the device so that the abatement device can run continuously for a long time. Moreover, since the plasma decontamination machine having the non-migrating type plasma jet torch is used as the decontamination unit, of course, in addition to the thermal decomposition of CF4, the exhaust gas generated by the semiconductor process can be thermally decomposed with a small amount of energy consumption. . Further, since the plurality of detoxification units constitute the detoxification device, it is possible to provide a detoxification device which is small in size and excellent in space saving. Therefore, it is possible to provide a decontamination apparatus for exhaust gas generated by a semiconductor, which can reliably and efficiently remove harmful substances including semiconductor manufacturing exhaust gas having a large flow rate such as PFCS, and can be continuously operated for a long period of time and is also excellent in space saving. [Embodiment] Hereinafter, the present invention will be described based on the illustrated embodiments. In addition, in the following description, when the above-mentioned commemoration indicates each part, only the Arabic number is used instead of the auxiliary number of each symbol plus a letter, and when it is necessary to distinguish each part (that is, when the lower stage is mourned) The subsidiary numbers of uppercase letters are appended to Arabic numerals to indicate the difference. Fig. 1 is a view showing a schematic configuration of a detoxification device (10) for semiconductor manufacturing exhaust gas of the present embodiment. Figure 2 is a cross-sectional view taken along line A - A of Figure 1. As shown in the figure of -10-200831178, the detoxification device (10) of the present embodiment is generally a plurality of (three in this embodiment) abatement unit (12) and an exit scrubber (14). The tamper-removing unit (12) is a device that thermally decomposes an exhaust gas (F) such as PFCs discharged from a semiconductor manufacturing device (16) to remove harmful substances. As shown in FIG. 3, the plasma jet is composed of a plasma jet torch (18), a power supply unit (20), an operating gas supply unit (22), and a reaction tube (24). The torch (18) is a plasma torch (P) for generating a high temperature, and has a short cylindrical torch body (18a) made of a metal material such as brass and opened on both upper and lower sides. At the front end of the torch body (18a), an anode (18b) is connected, and a rod-shaped cathode (18c) is mounted inside. The anode (18b) is made of a high-melting-point metal having high conductivity such as copper or tungsten, and the plasma generating chamber (18d) is recessed inside the cylindrical nozzle. A plasma jet discharge hole (18e) for ejecting the plasma jet (P) generated in the plasma generating chamber (18d) is provided at a lower central portion of the anode (18b) on the side of the anode (18b). The upper part is provided with an operating gas supply port (18f), and the cathode (18 is a rod-shaped member, which is a main body portion made of a high-melting-point metal having high conductivity such as copper, and is made of tungsten mixed with niobium or tantalum and The outer radial end is formed by a spindle-shaped front end portion. The cathode (the front end portion of the 18 〇 is disposed in a plasma generating chamber (18d) recessed in the anode (18b). 18a) An insulating material -11 - 200831178 (not shown) such as tetrafluoroethylene resin or ceramic is installed between the anode (18b) and the cathode (18c) so that no electricity (short circuit) is provided between the electrodes. Further, the anode (18b) and the cathode (18 〇 are provided with a cooling water circulation path (not shown) to cool the members. Further, the anode (18b) and the cathode (18 〇) having the above configuration are useful for connection. Applying a predetermined discharge voltage to generate between the anode (18b) and the cathode (18〇) Arc power supply unit (20) The power supply unit (20) is suitable for applying a predetermined discharge voltage to the anode (18b) and the cathode (18 〇 to generate a plasma arc) in a so-called switching mode. Here, in the detoxification device (10) of the present embodiment, as shown in FIG. 1, the same number of power supply units (20) as the frequently operated decontamination unit (12) are provided, and the power supply unit (20) is The switch unit (26) is connected to the abatement unit (12). Therefore, by operating the switch (26), the abatement unit (12) to supply power can be switched. The action gas supply unit (22), as shown in the figure 3 is a unit for supplying an operating gas (G) such as nitrogen, hydrogen or argon to the plasma generating chamber (18d) of the anode (Ub), and storing it in a cylinder or the like (not shown). a regulator (22a) for depressurizing the high-pressure operating gas (G), and a working gas supply pipe for connecting the regulator (22a) and the operating gas supply port (1 8 f) provided at the anode (18b) (22b) Further, in the operating gas supply pipe (22b), it is installed to control the supply to the plasma generating chamber (18d) Flow rate control means for gas (G) amount (28). The reaction tube (24) is a straight tube type member which is formed of a refractory material such as castable material and has one end (the upper end of FIG. 3) passes through the exhaust gas feeder. (3 〇) even -12· 200831178 is connected to the end of the plasma spray nozzle (18e) side of the plasma spray torch (18) and surrounds the plasma jet (P) and exhaust gas (F) to be inside The thermal decomposition of the exhaust gas (F) is performed. Here, the exhaust gas supplier (30) is blown into the exhaust gas (F) in a spiral shape to be supplied to a member in the vicinity of the upstream side of the discharge side of the plasma jet (P). The other end of the reaction cylinder (24) is the discharge end of the exhaust gas (F) which has been decomposed in the reaction cylinder (24), as shown in Fig. 1, and is connected to the storage through the flushing rotary shower (3 2). The liquid medicine and the water tank (34) are allowed to flow while the chemical liquid or water is rotated along the inner wall surface of the pipe body, so that the dust in the exhaust gas (F) does not adhere to the pipe body. Further, one end of an individual outlet pipe (37) having an outlet valve (35) is connected to the water tank (34), and the other end of the individual outlet pipe (37) is connected to an inlet of an outlet scrubber (14) to be described later. side. That is, the individual outlet pipes (37) are connected to the discharge side end portions of the respective reaction tubes (24), and the treated exhaust gas discharged from the respective reaction tubes (24) through the individual outlet pipes (37) (F) ) Individually sent to the exit scrubber (14). Further, a spraying means (not shown) for spraying the washing and cooling water toward the outlet valve (35) is attached to the individual outlet pipes (37). In the reaction cylinder (24) surrounding the plasma jet (P) and the exhaust gas (F), a high temperature region heated by a high temperature plasma jet (P) is formed in the inner space thereof. Therefore, in the exhaust gas (F) flowing down through the reaction vessel (24), the undecomposed exhaust gas (F) which is not in direct contact with the plasma jet (P) is also thermally decomposed when passing through the high temperature region. Further, although not shown, a sensor is attached to the reaction cartridge (24) for sensing at least one of temperature, pressure, or plasma jet (P) ignition state in the reaction cartridge (24), and Using the information sensed by the sensor, the opening and closing of the inlet valve (40) described later is automatically controlled. In the detoxification device (10) of the present embodiment, three of the above-mentioned abatement units (12) are erected and arranged on the water tank (34) [that is, the plurality of reaction tubes (24) are approached] (refer to Fig. 1 and Fig. 2) 'The exhaust gas feeders (3 〇) of the respective abatement units (12A) to (12C) are connected to a plurality of branches (3 6 ) branched by the main exhaust gas (F) ( In the case of this embodiment, there are three) individual inlet pipes (38A) to (38C). Here, inlet valves (4A) to (40C) are respectively attached to the individual inlet pipes (38A) to (38C), and the abatement unit (12) can be controlled by opening and closing the inlet valve (40). Supply and stop of exhaust gas. That is, by providing such an inlet valve (40) to the individual inlet piping (38), the flow control of the exhaust gas (F) in the individual inlet piping (38) can be performed. Further, one end of the bypass pipe (42) is connected to the main pipe (36) via a normally closed valve (42a), and the other end of the bypass pipe (42) is connected to the inlet side of the outlet scrubber (14) to be described later. . Further, the outer circumferences of the plurality of reaction tubes (24) arranged side by side on the water tank (34) are surrounded by a heat insulating material (H) made of a material such as rock wool or calcium silicate. Further, as shown in FIG. 1, in the present embodiment, the four semiconductor manufacturing apparatuses (16A) to (16D) are connected to the main piping (36) via the valves (44A) to (44D), but the connection is made. The number of semiconductor manufacturing apparatuses (16) in the detoxification apparatus (10) is not limited to this. Further, although the exhaust gas (F) discharged from the semiconductor manufacturing apparatus (16) is once collected in the main piping (36) and then distributed to the individual inlet piping (38), individual inlet piping (3) may be used. 8) Directly connected to the semiconductor manufacturing-14-200831178 device (16), and the individual inlet pipes (38) are connected to each other. That is, as long as a plurality of abatement units (1 2 ) are respectively connected to the semiconductor manufacturing apparatus (16) via the individual inlet piping (38), and the circulation of the exhaust gas (F) in the respective inlet piping (38) can be controlled. The form 'the piping structure is any structure. The outlet scrubber (14) is used for washing the exhaust gas (F) which is thermally decomposed in the abatement unit (12) to remove the whitefly or the water-soluble component for purification, and is also used for cooling the high temperature due to thermal decomposition. The exhaust gas (F) 'jets the liquid or water from above by providing the exhaust gas introduction port (46) to the straight tube type scrubber body (48) at the lower end portion and facing the direction in which the exhaust gas (F) flows. The lower nozzle (50) is formed. The outlet scrubber (14) is also erected on the water tank (34) in the same manner as the abatement unit (12), and the liquid medicine or water sprayed from the nozzle (50) is sent to the water tank (34). Further, at the top outlet ' of the outlet scrubber (14), an exhaust fan (54) for discharging the treated exhaust gas (F) to the atmosphere is connected via a gas pipe (52). When the detoxification device (1 〇) of the present embodiment configured as above is used to remove the harmful substances of the exhaust gas (F), first, the power source of the detoxification device (10) (not shown) is turned on to make it The flow control means (28) of the operation detoxification unit (12) [in the example shown in Fig. 1 for the detoxification units (12A) and (12C)] operate to send the operating gas (G) to the plasma generation chamber (18d). )Inside. Next, the switch (26) is switched to connect the abatement unit (12) and the power supply unit (20) to be operated to operate the power supply unit (20), and the plasma jet ignition switch of the abatement unit (12) is turned on. (not shown) to apply a voltage between the electrodes (18b) and (18c) of the plasma torch (18) to cause the plasma jet -15-200831178 (P) to be ejected from the plasma jet (18e). )ejection. Next, when the temperature in the reaction tube (24) reaches a predetermined temperature at which the harmful matter of the exhaust gas (F) can be removed, the inlet valve (40) of the individual inlet pipe (38) is opened [in the example shown in Fig. 1 The valves (40 A) and (40C) of the individual pipes (38 A) and (38 C) are used to supply the exhaust gas (F) into the reaction cylinder (24). Thus, the exhaust gas (F) supplied to the reaction cylinder (24) through the exhaust gas supplier (30) spirally flows around the plasma jet (P) and is thermally decomposed in the reaction cylinder (24). As described above, the exhaust gas (F) thermally decomposed by the abatement unit (12) is collected in the exhaust gas introduction port (46) of the outlet scrubber (14) via the individual outlet pipes (37), and in the scrubber ( 14) After being washed and cooled, it is discharged into the atmosphere via an exhaust fan (5 4 ). According to the detoxification device (10) of the present embodiment, the plurality of detoxification units (12) are connected to the semiconductor manufacturing device (16) through the individual pipes (38) provided with the valves (40) for opening and closing the flow path. Therefore, the valves (40A) to (40C) can be opened and closed in accordance with the flow rate of the exhaust gas (F) discharged from the semiconductor manufacturing apparatus (16) to increase or decrease the number of the abatement units (12) used. That is, in the case where the maximum exhaust gas treatment capacity of the abatement unit (12) is 1 liter liter/min, 200 liters/minute of exhaust gas (F) can be treated by arranging two such abatement units side by side. Further, the operation of one of the plurality of abatement units (12) may be stopped as a backup port. Further, the inlet valve (40) is closed and the discharge end portion connected to the reaction tube (24) is also closed. The outlet valve (35) of the individual outlet piping (3 7) can completely remove the abatement unit (12) from the exhaust gas (F) treatment process, and can perform the most easy cause without stopping the operation of the detoxification device (10). Maintenance of the abatement unit (12) of the detoxification device (10)-16- 200831178 that is damaged due to operation (ie, the most maintenance required). Therefore, the abatement device (10) can be continuously operated for a long time. Moreover, since the plasma detoxification machine (12) having the non-migration type plasma jet torch (18) is used as the abatement unit (12), it is of course possible to decompose with a small amount of energy consumption in addition to the thermal decomposition of CF4. Exhaust gas generated by the semiconductor process (F) ° In addition, since a plurality of abatement units (10) constitute a detoxification device (1〇), it is constituted by a single detoxification unit (10) compared to a plurality of units. The decontamination device can be provided as a small-sized and space-saving detoxification device. Further, since it is set to sense at least one of temperature, pressure, or plasma jet (P) ignition state in the reaction cartridge (24), and automatically controls the opening and closing of the inlet valve (40) based on the sensed information, When the fault is detected by the abatement unit (12) (specifically, when the temperature in the reaction tube (24) is rapidly reduced, when the pressure in the reaction tube (24) is rapidly changed, or when the plasma jet (P) is misfired Then, the exhaust gas treatment of the abatement unit (12) that has failed is immediately interrupted, and the treatment of the exhaust gas (F) is automatically switched to the other abatement unit (12). Therefore, the detoxification of the exhaust gas (F) can be prevented. The processing efficiency is reduced, and the operation management load of the detoxification device (10) can be reduced. Further, in the above embodiment, although the three decontamination units (12) are provided, the decontamination device (10) is decontaminated. The number of the units (12) may be plural, for example, two or four or more. Further, in the above example, the three switches (12) are provided through the switch (26). In the case of the power supply unit (20), but the number of power supply units (20) is set and In addition to this, as long as the number of the abatement unit (12) is less than -17-200831178, in particular, the minimum amount of the exhaust gas treatment capability as the target can be ensured. Thereby, the abatement device (10) can be further improved. Further, although the plurality of abatement units (12) and the outlet scrubber (14) are arranged side by side (see Fig. 2), the arrangement of the abatement unit (12) and the outlet scrubber (14) is not In this case, as long as the plurality of abatement units (12) are disposed close to each other, the design change can be appropriately performed depending on the situation in which the detoxification device (10) is provided with a space. However, as in the present embodiment, by removing the damage The side-by-side arrangement of the units (12) can improve the ease of use of the space. In addition, in the above embodiment, it is shown that the plurality of reaction tubes (24) are integrally surrounded by the heat insulating material (H), thereby thermally decomposing through the reaction tube with high efficiency ( 24) An example of the exhaust gas (F), but depending on the type of the exhaust gas (F) constituting the object to be harmed, the respective reaction tubes (24) may be individually surrounded by the heat insulating material (H), or the heat insulating material (H) may not be provided. Furthermore, in the above embodiment, it is indicated that the outlet is washed. When the scrubber (14) is installed in the decontamination device (10), for example, in the post-process, an exhaust gas treatment process is additionally provided, and the detoxification device (10) only performs decomposition of the PFCs, as shown in FIG. The outlet scrubber (14) can be omitted. In addition, the exhaust gas (F) introduced into the abatement unit (12) can be cleaned by a wet scrubber as needed. [Simplified illustration] [Fig. 1] BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1. -18- 200831178 [FIG. 3] shows the present invention. FIG. 4 is a schematic view showing a configuration of a detoxification device for semiconductor manufacturing exhaust gas according to another embodiment of the present invention. [Description of main component symbols] 10 : Decontamination device 1 2 : Decontamination unit 1 4 : Exit scrubber 16 : Semiconductor manufacturing device 1 8 : Plasma jet torch 20 : Power supply unit 22 : Operating gas supply unit 24 : Reaction tube 26 : Switch 3 2 : Rotary shower 34 : Sink 35 : Outlet valve 3 6 : Main pipe 3 7 : Individual outlet pipe 3 8 : Individual inlet pipe 40 : Inlet valve 44 : Valve 46 : Exhaust gas inlet 48 : Washer body -19- 200831178 5 0 : Nozzle 5 4 : Exhaust fan F: Semiconductor manufacturing waste gas Η : Insulation material Ρ : Plasma jet -20-