TWI768068B - Electroconductive particle, method for producing electroconductive particle, conductive material, and connection structure - Google Patents
Electroconductive particle, method for producing electroconductive particle, conductive material, and connection structure Download PDFInfo
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Abstract
本發明提供一種導電性粒子,其能夠有效地提高電極間之導通可靠性,且能夠有效地防止因外部衝擊所致之導電部之破裂。 本發明之導電性粒子包含:基材粒子、配置於上述基材粒子之表面上之第1導電部、及配置於上述第1導電部之表面上之第2導電部,且於利用電子顯微鏡對上述第2導電部之外表面進行觀察時,不存在最大長度方向之尺寸為50 nm以上之針孔,或以1個/μm2 以下存在最大長度方向之尺寸為50 nm以上之針孔。The present invention provides an electroconductive particle which can effectively improve the conduction reliability between electrodes and can effectively prevent the breakage of the electroconductive portion due to external impact. The electroconductive particle of this invention contains a base material particle, the 1st electroconductive part arrange|positioned on the surface of the said base material particle, and the 2nd electroconductive part arrange|positioned on the surface of the said 1st electroconductive part, and is examined by the electron microscope. When the outer surface of the second conductive part is observed, there are no pinholes with a size of 50 nm or more in the maximum longitudinal direction, or pinholes with a size of 50 nm or more in the maximum longitudinal direction at 1/μm 2 or less.
Description
本發明係關於一種例如可用於電極間之電性連接之導電性粒子。又,本發明係關於一種上述導電性粒子之製造方法、使用上述導電性粒子之導電材料及連接構造體。The present invention relates to an electroconductive particle that can be used, for example, for electrical connection between electrodes. Moreover, this invention relates to the manufacturing method of the said electroconductive particle, the electroconductive material using the said electroconductive particle, and a connection structure.
廣泛已知有各向異性導電膏及各向異性導電膜等各向異性導電材料。該各向異性導電材料係於黏合劑樹脂中分散有導電性粒子。又,有使用導電層之表面經絕緣處理之導電性粒子作為導電性粒子之情況。Anisotropic conductive materials such as anisotropic conductive pastes and anisotropic conductive films are widely known. In the anisotropic conductive material, conductive particles are dispersed in a binder resin. Moreover, the electroconductive particle by which the surface of a conductive layer was insulated may be used as electroconductive particle.
上述各向異性導電材料係用以獲得各種連接構造體。作為利用上述各向異性導電材料進行之連接,例如可列舉:可撓性印刷基板與玻璃基板之連接(FOG(Film on Glass,鍍膜玻璃))、半導體晶片與可撓性印刷基板之連接(COF(Chip on Film,薄膜覆晶))、半導體晶片與玻璃基板之連接(COG(Chip on Glass,玻璃覆晶))、以及可撓性印刷基板與玻璃環氧基板之連接(FOB(Film on Board,鍍膜板))等。The above-mentioned anisotropic conductive material is used to obtain various connection structures. Examples of the connection using the above-mentioned anisotropic conductive material include connection between a flexible printed circuit board and a glass substrate (FOG (Film on Glass, coated glass)), connection between a semiconductor chip and a flexible printed circuit board (COF) (Chip on Film), the connection between semiconductor chips and glass substrates (COG (Chip on Glass, chip on glass)), and the connection between flexible printed substrates and glass epoxy substrates (FOB (Film on Board) , Coated plate)) and so on.
作為上述導電性粒子之一例,於下述專利文獻1中揭示有具備基材粒子與被覆該基材粒子之表面之導電性金屬層之導電性粒子。上述基材粒子係玻璃轉移溫度(Tg)為50℃以上且100℃以下之聚合物粒子。上述導電性金屬層之厚度為0.01 μm~0.15 μm。 [先前技術文獻] [專利文獻]As an example of the said electroconductive particle, the electroconductive particle provided with the base material particle and the electroconductive metal layer which coat|covers the surface of this base material particle is disclosed in following patent document 1. The said base material particle is a polymer particle whose glass transition temperature (Tg) is 50 degreeC or more and 100 degreeC or less. The thickness of the conductive metal layer is 0.01 μm~0.15 μm. [Prior Art Literature] [Patent Literature]
[專利文獻1]日本專利特開2012-064559號公報[Patent Document 1] Japanese Patent Laid-Open No. 2012-064559
[發明所欲解決之問題][Problems to be Solved by Invention]
近年來,各種電子器件之開發進展,基板之素材亦多樣化。例如開發出曲面面板、或可自由地彎折之可撓性面板等。由於上述曲面面板等要求柔軟性,故而作為用於曲面面板等之可撓性構件,研究有聚醯亞胺基板等塑膠基板代替先前之玻璃基板。In recent years, with the development of various electronic devices, the materials of substrates are also diversified. For example, a curved panel or a flexible panel that can be bent freely has been developed. Since the above-mentioned curved panels and the like require flexibility, plastic substrates such as polyimide substrates have been studied to replace the conventional glass substrates as flexible members for curved panels and the like.
於在塑膠基板直接安裝半導體晶片等之情形時,塑膠基板因安裝時之溫度或壓力而容易發生變形或破壞等,因此必須使安裝時之溫度或壓力變得極低。若使安裝時之溫度或壓力變低,則於電極間之導電連接時無法使導電性粒子充分地變形。作為結果,有難以充分地確保導電性粒子與電極之接觸面積之情況。又,有產生經壓縮之導電性粒子欲恢復至原來之形狀之作用,而產生稱為反彈(springback)之現象之情況。若產生反彈,則有難以充分地維持導電性粒子與電極之接觸面積之情況。作為結果,有電極間之導通可靠性降低之情況。When a semiconductor chip is directly mounted on a plastic substrate, the plastic substrate is easily deformed or damaged due to the temperature or pressure during mounting, so the temperature or pressure during mounting must be extremely low. When the temperature or pressure at the time of mounting is lowered, the conductive particles cannot be sufficiently deformed at the time of conductive connection between electrodes. As a result, it may be difficult to sufficiently secure the contact area between the electroconductive particles and the electrode. In addition, there is a case where a phenomenon called springback occurs because the compressed conductive particles try to return to their original shape. When rebound occurs, it may be difficult to sufficiently maintain the contact area between the conductive particles and the electrode. As a result, the conduction reliability between electrodes may decrease.
又,藉由使用如專利文獻1所記載之先前之導電性粒子,即便於安裝時之溫度或壓力較低之情形時,亦可以某種程度發揮較高之連接可靠性。然而,於此種導電性粒子中,由於基材粒子相對較柔軟,故而有因外部衝擊而容易於導電性金屬層產生破裂(導電部之破裂)之情況。先前之導電性粒子難以防止因外部衝擊所致之導電部之破裂。Moreover, by using the conventional electroconductive particle as described in patent document 1, even when the temperature and the pressure at the time of mounting are low, it becomes possible to exhibit high connection reliability to some extent. However, among such electroconductive particles, since the base material particles are relatively soft, cracks (cracks in the conductive portion) may easily occur in the electroconductive metal layer due to external impact. It is difficult for conventional conductive particles to prevent breakage of the conductive portion due to external impact.
本發明之目的在於提供一種導電性粒子,其能夠有效地提高電極間之導通可靠性,且能夠有效地防止因外部因衝擊所致之導電部之破裂。又,本發明提供一種上述導電性粒子之製造方法、使用上述導電性粒子之導電材料及連接構造體。 [解決問題之技術手段]The objective of this invention is to provide the electroconductive particle which can improve the conduction reliability between electrodes effectively, and can prevent the breakage of the electroconductive part by external impact effectively. Moreover, this invention provides the manufacturing method of the said electroconductive particle, the electroconductive material using the said electroconductive particle, and a connection structure. [Technical means to solve problems]
根據本發明之廣泛之態樣,提供一種導電性粒子,其具備:基材粒子;第1導電部,其配置於上述基材粒子之表面上;及第2導電部,其配置於上述第1導電部之外表面上;且於利用電子顯微鏡對上述第2導電部之外表面進行觀察時,不存在最大長度方向之尺寸為50 nm以上之針孔,或以1個/μm2 以下存在最大長度方向之尺寸為50 nm以上之針孔。According to a broad aspect of the present invention, there is provided an electroconductive particle comprising: a substrate particle; a first conductive portion arranged on the surface of the substrate particle; and a second conductive portion arranged on the first conductive portion described above On the outer surface of the conductive part; and when the outer surface of the second conductive part is observed with an electron microscope, there are no pinholes with a size of 50 nm or more in the maximum longitudinal direction, or there are 1 pinhole/μm2 or less. The size in the length direction is a pinhole of 50 nm or more.
根據本發明之廣泛之態樣,提供一種導電性粒子,其具備:基材粒子;第1導電部,其配置於上述基材粒子之表面上;及第2導電部,其配置於上述第1導電部之外表面上;且於利用電子顯微鏡對上述第2導電部之外表面進行觀察時,不存在最大長度方向之尺寸為50 nm以上之針孔,或以1個/μm2 以下存在最大長度方向之尺寸為50 nm以上且200 nm以下之針孔。According to a broad aspect of the present invention, there is provided an electroconductive particle comprising: a substrate particle; a first conductive portion arranged on the surface of the substrate particle; and a second conductive portion arranged on the first conductive portion described above On the outer surface of the conductive part; and when the outer surface of the second conductive part is observed with an electron microscope, there are no pinholes with a size of 50 nm or more in the maximum longitudinal direction, or there are 1 pinhole/μm2 or less. The size in the longitudinal direction is a pinhole of 50 nm or more and 200 nm or less.
於本發明之導電性粒子之某一特定之態樣中,上述導電性粒子滿足下述式(1)之關係,且25℃下之壓縮回復率為10%以下。In a specific aspect of the electroconductive particle of this invention, the said electroconductive particle satisfy|fills the relation of following formula (1), and the compression recovery rate in 25 degreeC is 10 % or less.
A≦5500-B×100 式(1)A≦5500-B×100 Formula (1)
上述式(1)中,A為上述導電性粒子之10%K值(N/mm2 ),B為上述導電性粒子之平均粒徑(μm)。In the said formula (1), A is the 10% K value (N/mm< 2 >) of the said electroconductive particle, and B is the average particle diameter (micrometer) of the said electroconductive particle.
於本發明之導電性粒子之某一特定之態樣中,平均粒徑為3 μm以上且30 μm以下。In a specific aspect of the electroconductive particle of this invention, an average particle diameter is 3 micrometers or more and 30 micrometers or less.
於本發明之導電性粒子之某一特定之態樣中,上述第2導電部含有金、銀、鈀、鉑、銅、鈷、釕、銦、或錫。In a specific aspect of the electroconductive particle of this invention, the said 2nd electroconductive part contains gold, silver, palladium, platinum, copper, cobalt, ruthenium, indium, or tin.
於本發明之導電性粒子之某一特定之態樣中,上述第1導電部中所含之金屬之離子化傾向大於上述第2導電部中所含之金屬之離子化傾向。In a specific aspect of the electroconductive particle of this invention, the ionization tendency of the metal contained in the said 1st electroconductive part is larger than the ionization tendency of the metal contained in the said 2nd electroconductive part.
於本發明之導電性粒子之某一特定之態樣中,上述第1導電部含有鎳及磷。In a specific aspect of the electroconductive particle of this invention, the said 1st electroconductive part contains nickel and phosphorus.
於本發明之導電性粒子之某一特定之態樣中,於上述第1導電部之厚度方向上,上述第1導電部中之上述第2導電部側之磷之含量多於上述第1導電部中之上述基材粒子側之磷之含量。In a specific aspect of the electroconductive particle of this invention, in the thickness direction of the said 1st electroconductive part, the phosphorus content of the said 2nd electroconductive part side in the said 1st electroconductive part is more than the said 1st electroconductive part The content of phosphorus on the side of the above-mentioned substrate particles in the part.
根據本發明之廣泛之態樣,提供一種導電性粒子之製造方法,其包括如下步驟:使用具備基材粒子與配置於上述基材粒子之表面上之第1導電部的導電性粒子,藉由鍍覆處理於上述第1導電部之外表面上配置第2導電部;且上述第2導電部係以如下方式形成:於利用電子顯微鏡對上述第2導電部之外表面進行觀察時,不存在最大長度方向之尺寸為50 nm以上之針孔,或以1個/μm2 以下存在最大長度方向之尺寸為50 nm以上之針孔。According to a broad aspect of the present invention, there is provided a method for producing electroconductive particles, comprising the steps of: using electroconductive particles provided with substrate particles and a first conductive portion disposed on the surface of the substrate particles, by A second conductive portion is disposed on the outer surface of the first conductive portion by plating treatment; and the second conductive portion is formed in such a manner that when the outer surface of the second conductive portion is observed with an electron microscope, there is no Pinholes with a size of 50 nm or more in the maximum longitudinal direction, or pinholes with a size of 50 nm or more in the maximum longitudinal direction exist at a rate of 1/μm 2 or less.
根據本發明之廣泛之態樣,提供一種導電材料,其包含上述導電性粒子與黏合劑樹脂。According to a broad aspect of the present invention, there is provided a conductive material comprising the above-described conductive particles and a binder resin.
根據本發明之廣泛之態樣,提供一種連接構造體,其具備:第1連接對象構件,其於表面具有第1電極;第2連接對象構件,其於表面具有第2電極;及連接部,其將上述第1連接對象構件與上述第2連接對象構件連接;上述連接部之材料係上述導電性粒子、或包含上述導電性粒子與黏合劑樹脂之導電材料;且上述第1電極與上述第2電極係藉由上述導電性粒子而電性連接。 [發明之效果]According to a broad aspect of the present invention, there is provided a connection structure including: a first connection target member having a first electrode on a surface; a second connection target member having a second electrode on the surface; and a connection portion, It connects the said 1st connection object member and the said 2nd connection object member; The material of the said connection part is the said electroconductive particle, or the electroconductive material containing the said electroconductive particle and the binder resin; Two electrodes are electrically connected by the said electroconductive particle. [Effect of invention]
本發明之導電性粒子具備:基材粒子;第1導電部,其配置於上述基材粒子之表面上;及第2導電部,其配置於上述第1導電部之外表面上。於本發明之導電性粒子中,於利用電子顯微鏡對上述第2導電部之外表面進行觀察時,不存在最大長度方向之尺寸為50 nm以上之針孔,或以1個/μm2 以下存在最大長度方向之尺寸為50 nm以上之針孔。本發明之導電性粒子由於具備上述構成,故而能夠有效地提高電極間之導通可靠性,且能夠有效地防止因外部衝擊所致之導電部之破裂。The electroconductive particle of this invention is provided with the base material particle, the 1st electroconductive part arrange|positioned on the surface of the said base material particle, and the 2nd electroconductive part arrange|positioned on the outer surface of the said 1st electroconductive part. In the conductive particles of the present invention, when the outer surface of the second conductive portion is observed with an electron microscope, there are no pinholes with a size of 50 nm or more in the maximum longitudinal direction, or 1 pinhole/μm 2 or less. The size of the largest length direction is a pinhole of 50 nm or more. Since the electroconductive particle of this invention has the said structure, the conduction reliability between electrodes can be improved effectively, and the crack of the electroconductive part by external impact can be prevented effectively.
本發明之導電性粒子具備:基材粒子;第1導電部,其配置於上述基材粒子之表面上;及第2導電部,其配置於上述第1導電部之外表面上。於本發明之導電性粒子中,於利用電子顯微鏡對上述第2導電部之外表面進行觀察時,不存在最大長度方向之尺寸為50 nm以上之針孔,或以1個/μm2 以下存在最大長度方向之尺寸為50 nm以上且200 nm以下之針孔。本發明之導電性粒子由於具備上述構成,故而能夠有效地提高電極間之導通可靠性,且能夠有效地防止因外部衝擊所致之導電部之破裂。The electroconductive particle of this invention is provided with the base material particle, the 1st electroconductive part arrange|positioned on the surface of the said base material particle, and the 2nd electroconductive part arrange|positioned on the outer surface of the said 1st electroconductive part. In the conductive particles of the present invention, when the outer surface of the second conductive portion is observed with an electron microscope, there are no pinholes with a size of 50 nm or more in the maximum longitudinal direction, or 1 pinhole/μm 2 or less. The size in the maximum length direction is a pinhole of 50 nm or more and 200 nm or less. Since the electroconductive particle of this invention has the said structure, the conduction reliability between electrodes can be improved effectively, and the crack of the electroconductive part by external impact can be prevented effectively.
本發明之導電性粒子之製造方法包括如下步驟:使用具備基材粒子與配置於上述基材粒子之表面上之第1導電部的導電性粒子,藉由鍍覆處理於上述第1導電部之外表面上配置第2導電部。於本發明之導電性粒子之製造方法中,上述第2導電部係以如下方式形成:於利用電子顯微鏡對上述第2導電部之外表面進行觀察時,不存在最大長度方向之尺寸為50 nm以上之針孔,或以1個/μm2 以下存在最大長度方向之尺寸為50 nm以上之針孔。本發明之導電性粒子之製造方法由於具備上述構成,故而能夠有效地提高電極間之導通可靠性,且能夠有效地防止因外部衝擊所致之導電部之破裂。The manufacturing method of the electroconductive particle of this invention comprises the process of using the electroconductive particle provided with the base material particle and the 1st electroconductive part arrange|positioned on the surface of the said base material particle, and performing a plating process on the said 1st electroconductive part. The second conductive portion is arranged on the outer surface. In the manufacturing method of the electroconductive particle of this invention, the said 2nd electroconductive part is formed so that when the outer surface of the said 2nd electroconductive part is observed with an electron microscope, there is no dimension in the maximum longitudinal direction of 50 nm. The above pinholes, or there are pinholes with a size of 50 nm or more in the maximum longitudinal direction at 1/μm 2 or less. Since the manufacturing method of the electroconductive particle of this invention has the said structure, the conduction reliability between electrodes can be improved effectively, and the crack of the electroconductive part by external impact can be prevented effectively.
以下,對本發明之詳細情況進行說明。Hereinafter, the details of the present invention will be described.
(導電性粒子) 本發明之導電性粒子具備:基材粒子;第1導電部,其配置於上述基材粒子之表面上;及第2導電部,其配置於上述第1導電部之表面上。本發明之導電性粒子較佳為,於利用電子顯微鏡對上述第2導電部之外表面進行觀察時,不存在最大長度方向之尺寸為50 nm以上之針孔,或以1個/μm2 以下存在最大長度方向之尺寸為50 nm以上之針孔。於此情形時,於本發明之導電性粒子中,於存在上述針孔之情形時,每1 μm2 之所計數之上述針孔之個數為1個以下。於本發明之導電性粒子中,所計數之上述針孔之最大長度方向之尺寸為50 nm以上。(Electroconductive particle) The electroconductive particle of this invention is equipped with the base material particle; The 1st electroconductive part arrange|positioned on the surface of the said base material particle; And the 2nd electroconductive part arrange|positioned on the surface of the said 1st electroconductive part . In the electroconductive particles of the present invention, when the outer surface of the second conductive portion is observed with an electron microscope, it is preferable that there are no pinholes having a size of 50 nm or more in the maximum longitudinal direction, or that the number of pinholes is 1/μm 2 or less. There are pinholes with a size of 50 nm or more in the maximum length direction. In this case, in the electroconductive particle of this invention, when the said pinhole exists, the number of objects of the said pinhole counted per 1 micrometer 2 is 1 or less. In the electroconductive particle of this invention, the dimension of the largest longitudinal direction of the said pinhole counted is 50 nm or more.
本發明之導電性粒子較佳為,於利用電子顯微鏡對上述第2導電部之外表面進行觀察時,不存在最大長度方向之尺寸為50 nm以上之針孔,或以1個/μm2 以下存在最大長度方向之尺寸為50 nm以上且200 nm以下之針孔。於此情形時,於本發明之導電性粒子中,每1 μm2 之所計數之上述針孔之個數為1個以下。於本發明之導電性粒子中,上述針孔之最大長度方向之尺寸為50 nm以上且200 nm以下。In the electroconductive particles of the present invention, when the outer surface of the second conductive portion is observed with an electron microscope, it is preferable that there are no pinholes having a size of 50 nm or more in the maximum longitudinal direction, or that the number of pinholes is 1/μm 2 or less. There are pinholes whose size in the maximum length direction is 50 nm or more and 200 nm or less. In this case, in the electroconductive particle of this invention, the number of objects of the said pinhole counted per 1 micrometer 2 is 1 or less. In the electroconductive particle of this invention, the dimension of the maximum longitudinal direction of the said pinhole is 50 nm or more and 200 nm or less.
本發明由於具備上述構成,故而能夠有效地提高電極間之導通可靠性,且能夠有效地防止因外部衝擊所致之導電部之破裂。Since the present invention has the above-mentioned configuration, the conduction reliability between electrodes can be effectively improved, and the breakage of the conductive portion due to external impact can be effectively prevented.
為了獲得即便於安裝時之溫度或壓力較低之條件下亦具有較高之連接可靠性之連接構造體,必須使用具有相對較柔軟之基材粒子之導電性粒子。然而,具有相對較柔軟之基材粒子之導電性粒子因外部衝擊而容易於導電部產生破裂。本發明者等人為了抑制因外部衝擊所致之導電部之破裂而努力進行研究,結果發現,因外部衝擊所致之導電部之破裂之原因在於因形成導電性粒子之導電部之置換鍍金處理所產生之針孔。本發明者等人發現,於具有相對較柔軟之基材粒子之導電性粒子中,以針孔為起點而產生因外部衝擊所致之導電部之破裂。本發明由於具備上述構成,故而能夠有效地防止因外部衝擊所致之導電部之破裂。In order to obtain a connection structure with high connection reliability even under the conditions of low temperature or pressure during installation, it is necessary to use conductive particles having relatively soft substrate particles. However, the conductive particles having relatively soft base particles are easily broken in the conductive portion due to external impact. The inventors of the present invention have made efforts to suppress the breakage of the conductive portion due to external impact, and as a result, found that the cause of the breakage of the conductive portion due to the external shock is due to the replacement gold plating treatment of the conductive portion where the conductive particles are formed. resulting pinholes. The inventors of the present invention found that, in the conductive particles having relatively soft substrate particles, the breakage of the conductive portion due to the external impact occurs from the pinhole as a starting point. Since the present invention has the above-described configuration, it is possible to effectively prevent breakage of the conductive portion due to external impact.
上述針孔例如因藉由置換鍍金處理於利用鍍鎳所形成之第1導電部之表面上形成第2導電部時,鎳以離子之形式溶出而形成。例如因上述第1導電部中之金屬溶出,上述第1導電部之缺失部分為針孔。The above-mentioned pinholes are formed by elution of nickel in the form of ions when the second conductive portion is formed on the surface of the first conductive portion formed by nickel plating by, for example, displacement gold plating. For example, due to the elution of the metal in the first conductive portion, the missing portion of the first conductive portion is a pinhole.
於本發明之導電性粒子中,較佳為於利用電子顯微鏡對上述第2導電部之外表面進行觀察時,不存在最大長度方向之尺寸為50 nm以上之針孔。In the electroconductive particle of this invention, when observing the outer surface of the said 2nd electroconductive part with an electron microscope, it is preferable that the size of the maximum longitudinal direction does not exist the pinhole of 50 nm or more.
於本發明之導電性粒子中,於利用電子顯微鏡對上述第2導電部之外表面進行觀察時,於存在上述針孔之情形時,以1個/μm2 以下存在最大長度方向之尺寸為50 nm以上之針孔。較佳為於利用電子顯微鏡對上述第2導電部之外表面進行觀察時,最大長度方向之尺寸為50 nm以上之針孔之個數以0.1個/μm2 以下存在。於上述針孔之個數為上述較佳範圍之情形時,能夠更有效地提高電極間之導通可靠性,且能夠更有效地防止因外部衝擊所致之導電部之破裂。In the electroconductive particle of this invention, when the outer surface of the said 2nd electroconductive part is observed with an electron microscope, when the said pinhole exists, the dimension which exists in the maximum longitudinal direction is 1 piece/μm2 or less is 50. Pinholes above nm. Preferably, when the outer surface of the second conductive portion is observed with an electron microscope, the number of pinholes having a size of 50 nm or more in the maximum longitudinal direction is preferably 0.1/μm 2 or less. When the number of the above-mentioned pinholes is in the above-mentioned preferred range, the conduction reliability between the electrodes can be more effectively improved, and the breakage of the conductive portion due to external impact can be more effectively prevented.
於本發明之導電性粒子中,較佳為於利用電子顯微鏡對上述第2導電部之外表面進行觀察時,不存在最大長度方向之尺寸為50 nm以上且200 nm以下之針孔。In the electroconductive particle of this invention, when observing the outer surface of the said 2nd electroconductive part with an electron microscope, it is preferable that the size of the maximum longitudinal direction does not exist pinholes of 50 nm or more and 200 nm or less.
於本發明之導電性粒子中,於利用電子顯微鏡對上述第2導電部之外表面進行觀察時,於存在上述針孔之情形時,以1個/μm2 以下存在最大長度方向之尺寸為50 nm以上且200 nm以下之針孔。就更有效地提高電極間之導通可靠性之觀點、及更有效地防止因外部衝擊所致之導電部之破裂之觀點而言,最大長度方向之尺寸為50 nm以上之上述針孔之最大長度方向之尺寸較佳為150 nm以下,更佳為100 nm以下。較佳為於利用電子顯微鏡對上述第2導電部之外表面進行觀察時,最大長度方向之尺寸為50 nm以上且200 nm以下之針孔之個數以0.1個/μm2 以下存在。於上述針孔之個數為上述較佳範圍之情形時,能夠更有效地提高電極間之導通可靠性,且能夠更有效地防止因外部衝擊所致之導電部之破裂。In the electroconductive particle of this invention, when the outer surface of the said 2nd electroconductive part is observed with an electron microscope, when the said pinhole exists, the dimension which exists in the maximum longitudinal direction is 1 piece/μm2 or less is 50. Pinholes above nm and below 200 nm. From the viewpoint of more effective improvement of conduction reliability between electrodes and the viewpoint of more effective prevention of breakage of the conductive portion due to external impact, the maximum length of the above-mentioned pinhole having a dimension in the maximum longitudinal direction is 50 nm or more. The dimension of the direction is preferably 150 nm or less, more preferably 100 nm or less. Preferably, when the outer surface of the second conductive portion is observed with an electron microscope, the number of pinholes having a size of 50 nm or more and 200 nm or less in the maximum longitudinal direction is preferably 0.1/μm 2 or less. When the number of the above-mentioned pinholes is in the above-mentioned preferred range, the conduction reliability between the electrodes can be more effectively improved, and the breakage of the conductive portion due to external impact can be more effectively prevented.
關於上述針孔之有無,例如可藉由利用電子顯微鏡對任意之導電性粒子進行觀察而進行確認。具體而言,針對自任意導電性粒子之外周朝向內側0.5 μm之部分除外之部分,利用電子顯微鏡觀察任意之5個部位,藉此可確認上述針孔之有無。The presence or absence of the said pinhole can be confirmed by observing arbitrary electroconductive particle with an electron microscope, for example. Specifically, the presence or absence of the above-mentioned pinholes can be confirmed by observing 5 arbitrary sites with an electron microscope, except for the portion excluding the portion 0.5 μm inward from the outer periphery of any electroconductive particle.
上述針孔之最大長度方向之尺寸例如可藉由利用電子顯微鏡對任意之導電性粒子進行觀察而算出。上述針孔之最大長度方向之尺寸係將針孔之外周之2點以直線連結之距離,且係將該針孔之外周之2點以直線連結之距離成為最大之尺寸。The dimension of the maximum longitudinal direction of the said pinhole can be computed by observing arbitrary electroconductive particle with an electron microscope, for example. The dimension in the maximum longitudinal direction of the pinhole is the distance that connects two points on the outer periphery of the pinhole with a straight line, and the distance that connects the two points on the outer periphery of the pinhole with a straight line becomes the largest dimension.
上述針孔之形狀並無特別限定。上述針孔之形狀可為圓形狀,亦可為圓形狀以外之形狀。於上述針孔之形狀為圓形狀之情形時,上述針孔之最大長度方向之尺寸相當於最大直徑。The shape of the said pinhole is not specifically limited. The shape of the above-mentioned pinhole may be a circular shape or a shape other than a circular shape. When the shape of the above-mentioned pinhole is a circular shape, the dimension of the largest longitudinal direction of the above-mentioned pinhole corresponds to the largest diameter.
一般而言,於藉由無電解鍍覆等形成導電部之情形時,有形成未形成導電部之微小區域之情形。此種區域之最大長度方向尺寸一般未達50 nm,於本發明中,此種較小之區域不包含於上述針孔。In general, when the conductive portion is formed by electroless plating or the like, there are cases where a minute region where the conductive portion is not formed is formed. The maximum lengthwise dimension of such a region is generally less than 50 nm, and in the present invention, such a smaller region is not included in the above-mentioned pinhole.
就更有效地提高電極間之導通可靠性之觀點而言,上述導電性粒子較佳為滿足下述式(1)之關係。It is preferable that the said electroconductive particle satisfy|fills the relationship of following formula (1) from a viewpoint of improving the conduction|electrical_connection reliability between electrodes more effectively.
A≦5500-B×100 式(1)A≦5500-B×100 Formula (1)
上述式(1)中,A係上述導電性粒子之10%K值(N/mm2 ),B係上述導電性粒子之平均粒徑(μm)。In the said formula (1), A is the 10% K value (N/mm< 2 >) of the said electroconductive particle, and B is the average particle diameter (micrometer) of the said electroconductive particle.
就更有效地提高電極間之導通可靠性之觀點而言,上述導電性粒子之10%K值較佳為500 N/mm2 以上,更佳為1000 N/mm2 以上,且較佳為4500 N/mm2 以下,更佳為4000 N/mm2 以下。From the viewpoint of more effectively improving the conduction reliability between electrodes, the 10% K value of the conductive particles is preferably 500 N/mm 2 or more, more preferably 1000 N/mm 2 or more, and more preferably 4500 N/mm 2 or less, more preferably 4000 N/mm 2 or less.
上述導電性粒子之10%K值(將導電性粒子壓縮10%時之壓縮彈性模數)可藉由以下方式測定。The 10% K value of the said electroconductive particle (compression elastic modulus at the time of compressing electroconductive particle by 10%) can be measured by the following method.
使用微小壓縮試驗機,利用圓柱(直徑100 μm,金剛石製)之平滑壓頭端面,於25℃下,於壓縮速度0.33 mN/秒、及最大試驗負重20 mN之條件下壓縮1個導電性粒子。測定此時之負重值(N)及壓縮位移(mm)。可根據所獲得之測定值,藉由下述式求出25℃下之10%K值(10%壓縮彈性模數)。作為上述微小壓縮試驗機,例如可使用島津製作所公司製造之「微小壓縮試驗機MCT-W200」、Fischer公司製造之「Fischer Scope H-100」等。上述導電性粒子之25℃下之10%K值較佳為藉由將任意選擇之50個導電性粒子之25℃下之10%K值進行平均而算出。Using a micro-compression tester, use the smooth indenter end face of a cylinder (diameter 100 μm, made of diamond) to compress 1 conductive particle under the conditions of a compression speed of 0.33 mN/sec and a maximum test load of 20 mN at 25°C . Measure the load value (N) and the compression displacement (mm) at this time. From the obtained measured values, the 10% K value (10% compressive elastic modulus) at 25°C can be determined by the following formula. As the above-mentioned micro-compression testing machine, for example, "micro-compression testing machine MCT-W200" manufactured by Shimadzu Corporation, "Fischer Scope H-100" manufactured by Fischer Corporation, and the like can be used. It is preferable that the 10% K value at 25 degreeC of the said electroconductive particle is computed by averaging the 10% K value at 25 degreeC of 50 electroconductive particles selected arbitrarily.
10%K值(N/mm2 )=(3/21/2 )・F・S-3/2 ・R-1/2 F:導電性粒子經10%壓縮變形時之負重值(N) S:導電性粒子經10%壓縮變形時之壓縮位移(mm) R:導電性粒子之半徑(mm)10% K value (N/mm 2 )=(3/2 1/2 )・F・S -3/2・R -1/2 F: The load value of the conductive particles when they are 10% compressed and deformed (N) S: Compression displacement of conductive particles when 10% compressive deformation (mm) R: Radius of conductive particles (mm)
上述K值係普遍且定量地表示導電性粒子之硬度。藉由使用上述K值,可定量且唯一地表示導電性粒子之硬度。The above K value generally and quantitatively represents the hardness of the conductive particles. By using the above K value, the hardness of the electroconductive particles can be quantitatively and uniquely represented.
就更有效地提高電極間之導通可靠性之觀點而言,上述導電性粒子之25℃下之壓縮回復率較佳為10%以下,更佳為8%以下。上述導電性粒子之25℃下之壓縮回復率之下限並無特別限定。上述導電性粒子之25℃下之壓縮回復率亦可為3%以上。From the viewpoint of more effectively improving conduction reliability between electrodes, the compression recovery rate at 25° C. of the conductive particles is preferably 10% or less, more preferably 8% or less. The lower limit of the compression recovery rate at 25° C. of the conductive particles is not particularly limited. The compression recovery rate in 25 degreeC of the said electroconductive particle may be 3% or more.
上述導電性粒子之25℃下之壓縮回復率可藉由以下方式測定。The compression recovery rate in 25 degreeC of the said electroconductive particle can be measured as follows.
於試樣臺上散佈導電性粒子。針對所散佈之1個導電性粒子,使用微小壓縮試驗機,利用圓柱(直徑100 μm,金剛石製)之平滑壓頭端面,於25℃下,向導電性粒子之中心方向,於粒徑為10 μm以上之情形時施加直至50 mN之負載(反轉負重值),於粒徑未達10 μm之情形時施加直至10 mN之負載(反轉負重值)。其後,卸載至原點用負重值(0.40 mN)。可測定其間之負重-壓縮位移並根據下述式求出25℃下之壓縮回復率。再者,負載速度係設為0.33 mN/秒。作為上述微小壓縮試驗機,例如使用島津製作所公司製造之「微小壓縮試驗機MCT-W200」、Fischer公司製造之「Fischer Scope H-100」等。The conductive particles are scattered on the sample stage. For one scattered conductive particle, a micro-compression tester was used, and the end face of the cylinder (diameter 100 μm, made of diamond) was used to smooth the indenter at 25°C in the direction of the center of the conductive particle, with a particle size of 10 When the particle size exceeds 10 μm, a load of up to 50 mN (reversal load value) is applied, and when the particle size is less than 10 μm, a load of up to 10 mN (reversal load value) is applied. After that, unload to the origin with a load value (0.40 mN). The load-compression displacement during the period can be measured, and the compression recovery rate at 25°C can be obtained according to the following formula. In addition, the load speed was set to 0.33 mN/sec. As the above-mentioned micro-compression testing machine, "micro-compression testing machine MCT-W200" manufactured by Shimadzu Corporation, "Fischer Scope H-100" manufactured by Fischer Corporation, and the like are used, for example.
壓縮回復率(%)=[L2/L1]×100 L1:施加負載時自原點用負重值至反轉負重值之壓縮位移 L2:解除負載時自反轉負重值至原點用負重值之卸載位移Compression recovery rate (%)=[L2/L1]×100 L1: Compression displacement from the load value at the origin to the reverse load value when the load is applied L2: The difference between the load value from the reverse load value and the load value at the origin when the load is released unload displacement
上述導電性粒子由於具備上述壓縮特性,故而可將導電性粒子良好地用於彎曲部之導電連接用途。於將上述導電性粒子用於彎曲部之導電連接用途之情形時,能夠有效地發揮尤其優異之導通可靠性。Since the said electroconductive particle has the said compression characteristic, the electroconductive particle can be used for the electroconductive connection application of a bending part favorably. When the said electroconductive particle is used for the electrically-conductive connection application of a bent part, especially excellent conduction reliability can be exhibited effectively.
上述導電性粒子由於具備上述壓縮特性,故而可良好地用於可撓性構件之電極之導電連接用途,可更良好地用於彎曲狀態之可撓性構件之電極之導電連接用途。藉由使用上述導電性粒子,可發揮較高之導通可靠性並且於彎曲狀態下使用可撓性構件。Since the said electroconductive particle has the said compression characteristic, it can be used suitably for the electroconductive connection use of the electrode of a flexible member, and can be used for the electroconductive connection use of the electrode of the flexible member in a bent state more preferably. By using the said electroconductive particle, it can exhibit high conduction reliability, and can use a flexible member in a bent state.
作為使用可撓性構件之連接構造體,可列舉可撓性面板等。可撓性面板可用作曲面面板。上述導電性粒子較佳為用於形成可撓性面板之連接部,較佳為用於形成曲面面板之連接部。As a connection structure using a flexible member, a flexible panel etc. are mentioned. Flexible panels can be used as curved panels. It is preferable that the said electroconductive particle is a connection part for forming a flexible panel, and it is preferable that it is a connection part for forming a curved panel.
上述導電性粒子之平均粒徑較佳為3 μm以上,更佳為5 μm以上,進而較佳為7 μm以上,尤佳為10 μm以上,且較佳為1000 μm以下,更佳為100 μm以下,進而較佳為30 μm以下,尤佳為25 μm以下,最佳為20 μm以下。若上述導電性粒子之平均粒徑為3 μm以上且30 μm以下,則可將導電性粒子良好地用於導電連接用途。若上述導電性粒子之平均粒徑為上述下限以上及上述上限以下,則能夠更有效地降低電極間之連接電阻,且能夠更有效地提高電極間之導通可靠性。The average particle size of the conductive particles is preferably 3 μm or more, more preferably 5 μm or more, still more preferably 7 μm or more, particularly preferably 10 μm or more, and preferably 1000 μm or less, more preferably 100 μm Hereinafter, it is further preferably 30 μm or less, particularly preferably 25 μm or less, and most preferably 20 μm or less. When the average particle diameter of the said electroconductive particle is 3 micrometers or more and 30 micrometers or less, the electroconductive particle can be used for the electroconductive connection use favorably. If the average particle diameter of the said electroconductive particle is more than the said minimum and below the said upper limit, the connection resistance between electrodes can be reduced more effectively, and the conduction reliability between electrodes can be improved more effectively.
上述導電性粒子之平均粒徑更佳為數量平均粒徑。上述導電性粒子之平均粒徑例如藉由利用電子顯微鏡或光學顯微鏡觀察任意之50個導電性粒子並算出平均值、或算出複數次之利用雷射繞射式粒度分佈測定裝置所獲得之測定結果之平均值而求出。It is more preferable that the average particle diameter of the said electroconductive particle is a number average particle diameter. The average particle diameter of the above-mentioned electroconductive particles is obtained by, for example, observing 50 arbitrary electroconductive particles with an electron microscope or an optical microscope, calculating the average value, or calculating the measurement result obtained by a laser diffraction particle size distribution measuring apparatus several times. to find the average value.
上述導電性粒子之粒徑之變動係數越低越佳,通常為0.1%以上,且較佳為10%以下,更佳為8%以下,進而較佳為5%以下。若上述導電性粒子之粒徑之變動係數為上述下限以上及上述上限以下,則可進一步提高導通可靠性。但,上述導電性粒子之粒徑之變動係數亦可未達5%。The coefficient of variation of the particle diameter of the conductive particles is preferably as low as possible, and is usually 0.1% or more, preferably 10% or less, more preferably 8% or less, and still more preferably 5% or less. The conduction reliability can be further improved as the coefficient of variation of the particle diameter of the electroconductive particles is more than or equal to the above lower limit and less than or equal to the above upper limit. However, the coefficient of variation of the particle diameter of the conductive particles may be less than 5%.
上述變動係數(CV值)可藉由以下方式測定。The above-mentioned coefficient of variation (CV value) can be measured in the following manner.
CV值(%)=(ρ/Dn)×100 ρ:導電性粒子之粒徑之標准偏差 Dn:導電性粒子之粒徑之平均值CV value (%)=(ρ/Dn)×100 ρ: Standard deviation of particle size of conductive particles Dn: Average value of particle size of conductive particles
上述導電性粒子之形狀並無特別限定。上述導電性粒子之形狀可為球狀,亦可為扁平狀等球形狀以外之形狀。The shape of the said electroconductive particle is not specifically limited. The shape of the said electroconductive particle may be spherical, and the shape other than spherical shape, such as a flat shape, may be sufficient as it.
其次,參照圖式對本發明之具體實施形態進行說明。本發明並不僅限定於以下之實施形態,以下之實施形態亦可以無損本發明之特徵之程度適當變更、改良等。再者,於參照圖式中,為方便圖示,大小及厚度等自實際之大小及厚度適當變更。Next, specific embodiments of the present invention will be described with reference to the drawings. The present invention is not limited to the following embodiments, and the following embodiments may be appropriately modified, improved, or the like to such an extent that the characteristics of the present invention are not impaired. In addition, in the reference drawing, for convenience of illustration, the size and thickness are appropriately changed from the actual size and thickness.
圖1係表示本發明之第1實施形態之導電性粒子之剖視圖。FIG. 1 is a cross-sectional view showing an electroconductive particle according to a first embodiment of the present invention.
圖1所示之導電性粒子1具備基材粒子2、第1導電部3及第2導電部4。第1導電部3係配置於基材粒子2之表面上。第2導電部4係配置於第1導電部3之表面上。於基材粒子2與第2導電部4之間配置有第1導電部3。第1導電部3係與基材粒子2之表面接觸。第1導電部3覆蓋基材粒子2之表面。第2導電部4與第1導電部3之表面接觸。第2導電部4覆蓋第1導電部3之表面。導電性粒子1係藉由第1導電部3及第2導電部4被覆基材粒子2之表面之被覆粒子。第2導電部4位於導電部之最表面,為最外層。於導電性粒子1中形成有多層導電部。The electroconductive particle 1 shown in FIG. 1 is provided with the
圖1所示之導電性粒子1之針孔之存在狀態滿足上述構成。The existence state of the pinholes of the electroconductive particle 1 shown in FIG. 1 satisfy|fills the said structure.
於導電性粒子1中,第1導電部3覆蓋基材粒子2之整個表面,形成導電層。上述第1導電部可覆蓋上述基材粒子之整個表面,亦可不覆蓋上述基材粒子之整個表面。上述第1導電部可形成覆蓋上述基材粒子之整個表面之導電層,亦可不形成覆蓋上述基材粒子之整個表面之導電層。上述第1導電部亦可為導電層。上述導電性粒子亦可具有上述基材粒子未由上述第1導電部被覆之區域。In the electroconductive particle 1, the 1st
於導電性粒子1中,第2導電部4覆蓋第1導電部3之整個表面,形成導電層。上述第2導電部可覆蓋上述第1導電部之整個表面,亦可不覆蓋上述第1導電部之整個表面。上述第2導電部可形成覆蓋上述第1導電部之整個表面之導電層,亦可不形成覆蓋上述第1導電部之整個表面之導電層。上述第2導電部亦可為導電層。上述導電性粒子亦可具有上述第1導電部未由上述第2導電部被覆之區域。In the electroconductive particle 1, the 2nd
導電性粒子1不具有芯物質。導電性粒子1於導電部之外表面不具有突起。導電性粒子1為球狀。第1導電部3及第2導電部4於外表面不具有突起。如此,本發明之導電性粒子可於導電部之表面不具有突起,亦可為球狀。又,導電性粒子1不具有絕緣物質。但,導電性粒子1亦可具有配置於第2導電部4之外表面上之絕緣物質。The electroconductive particle 1 does not have a core substance. The electroconductive particle 1 does not have a processus|protrusion on the outer surface of an electroconductive part. The electroconductive particle 1 is spherical. The first
又,於導電性粒子1中,第1導電部3係直接積層於基材粒子2之表面上。於上述導電性粒子中,亦可於上述基材粒子與上述第1導電部之間配置有其他導電部。於上述導電性粒子中,亦可於上述基材粒子之表面上隔著其他導電部而配置有上述第1導電部。Moreover, in the electroconductive particle 1, the 1st
圖2係表示本發明之第2實施形態之導電性粒子之剖視圖。It is sectional drawing which shows the electroconductive particle which concerns on 2nd Embodiment of this invention.
圖2所示之導電性粒子21具備基材粒子2、第1導電部22、第2導電部23、複數個芯物質24及絕緣性物質25。第1導電部22配置於基材粒子2之表面上。第2導電部23配置於第1導電部22之表面上。複數個芯物質24配置於基材粒子2之表面上。第1導電部22及第2導電部23覆蓋基材粒子2與複數個芯物質24。導電性粒子21係藉由第1導電部22及第2導電部23被覆基材粒子2及芯物質24之表面之被覆粒子。The
導電性粒子21於導電部之外表面具有複數個突起21a。第1導電部22及第2導電部23於外表面具有複數個突起22a及23a。複數個芯物質24埋入至第1導電部22及第2導電部23內。芯物質24配置於突起21a、22a及23a之內側。第1導電部22及第2導電部23之外表面藉由複數個芯物質24而隆起,形成有突起21a、22a及23a。如此,上述導電性粒子亦可於導電部之外表面具有突起。又,上述導電性粒子亦可於第1導電部之外表面不具有突起,且於第2導電部之外表面具有突起。上述導電性粒子亦可於第2導電部之內部或內側以形成複數個突起之方式具備使第2導電部之表面隆起之複數個芯物質。上述芯物質可位於第1導電部之內側,可位於第1導電部之內部,亦可位於第1導電部之外側。The
於導電性粒子21中,為了形成突起21a、22a及23a而使用複數個芯物質24。於上述導電性粒子中,為了形成上述突起,亦可不使用複數個上述芯物質。於上述導電性粒子中,亦可不具備複數個上述芯物質。In the
導電性粒子21具有配置於第2導電部23之外表面上之絕緣性物質25。第2導電部23之外表面之至少一部分區域由絕緣性物質25被覆。絕緣性物質25係藉由具有絕緣性之材料而形成,為絕緣性粒子。如此,上述導電性粒子亦可具有配置於導電部之外表面上之絕緣性物質。但,上述導電性粒子亦可未必具有絕緣性物質。The
以下,對導電性粒子之其他詳細情況進行說明。再者,於以下之說明中,「(甲基)丙烯酸」係指「丙烯酸」與「甲基丙烯酸」之一者或兩者,「(甲基)丙烯酸酯」係指「丙烯酸酯」與「甲基丙烯酸酯」之一者或兩者。Hereinafter, other details of the electroconductive particles will be described. In addition, in the following description, "(meth)acrylic acid" refers to one or both of "acrylic acid" and "methacrylic acid", and "(meth)acrylate" refers to "acrylate" and "methacrylic acid". methacrylate” one or both.
(基材粒子) 作為上述基材粒子,可列舉樹脂粒子、除金屬粒子以外之無機粒子、有機無機混合粒子及金屬粒子等。上述基材粒子較佳為除金屬粒子以外之基材粒子,更佳為樹脂粒子、除金屬粒子以外之無機粒子或有機無機混合粒子。上述基材粒子亦可為具備核、與配置於該核之表面上之殼之核殼粒子。(Substrate particles) As the above-mentioned substrate particles, resin particles, inorganic particles other than metal particles, organic-inorganic hybrid particles, metal particles, and the like can be mentioned. The above-mentioned substrate particles are preferably substrate particles other than metal particles, more preferably resin particles, inorganic particles other than metal particles, or organic-inorganic hybrid particles. The said base material particle may be the core-shell particle which has a core and the shell arrange|positioned on the surface of this core.
上述基材粒子進而較佳為樹脂粒子或有機無機混合粒子,可為樹脂粒子,亦可為有機無機混合粒子。藉由使用該等較佳之基材粒子,更有效地發揮本發明之效果,可獲得更適於電極間之電性連接之導電性粒子。The above-mentioned base material particles are further preferably resin particles or organic-inorganic hybrid particles, and may be resin particles or organic-inorganic hybrid particles. By using these preferable base material particles, the effect of the present invention can be exerted more effectively, and electroconductive particles more suitable for electrical connection between electrodes can be obtained.
於使用上述導電性粒子將電極間連接時,於將上述導電性粒子配置於電極間後,藉由進行壓接而使上述導電性粒子壓縮。若基材粒子為樹脂粒子或有機無機混合粒子,則於上述壓接時上述導電性粒子容易變形,導電性粒子與電極之接觸面積變大。因此,電極間之導通可靠性進一步變高。When connecting between electrodes using the said electroconductive particle, after arrange|positioning the said electroconductive particle between electrodes, the said electroconductive particle is compressed by crimping. When the base material particle is a resin particle or an organic-inorganic hybrid particle, the said electroconductive particle will deform|transform easily at the time of the said pressure-bonding, and the contact area of an electroconductive particle and an electrode will become large. Therefore, the conduction reliability between electrodes is further improved.
作為上述樹脂粒子之材料,可較好地使用各種樹脂。作為上述樹脂粒子之材料,例如可列舉:聚乙烯、聚丙烯、聚苯乙烯、聚氯乙烯、聚偏二氯乙烯、聚異丁烯、聚丁二烯等聚烯烴樹脂;聚甲基丙烯酸甲酯、聚丙烯酸甲酯等丙烯酸系樹脂;聚對苯二甲酸烷二酯、聚碳酸酯、聚醯胺、酚甲醛樹脂、三聚氰胺甲醛樹脂、苯并胍胺甲醛樹脂、脲甲醛樹脂、酚樹脂、三聚氰胺樹脂、苯并胍胺樹脂、脲樹脂、環氧樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、聚碸、聚苯醚、聚縮醛、聚醯亞胺、聚醯胺醯亞胺、聚醚醚酮、聚醚碸、及使具有乙烯性不飽和基之各種聚合性單體之1種或2種以上聚合所獲得之聚合物等。As the material of the above-mentioned resin particles, various resins can be preferably used. Examples of the material of the resin particles include polyolefin resins such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyisobutylene, and polybutadiene; polymethyl methacrylate, Acrylic resins such as polymethyl acrylate; polyalkylene terephthalate, polycarbonate, polyamide, phenol formaldehyde resin, melamine formaldehyde resin, benzoguanamine formaldehyde resin, urea formaldehyde resin, phenol resin, melamine resin , benzoguanamine resin, urea resin, epoxy resin, unsaturated polyester resin, saturated polyester resin, polysiloxane, polyphenylene ether, polyacetal, polyimide, polyamide imide, polyether Ether ketones, polyether ketones, and polymers obtained by polymerizing one or more of various polymerizable monomers having ethylenically unsaturated groups, etc.
由於可設計及合成適於導電材料之任意之具有壓縮時之物性之樹脂粒子,且可將基材粒子之硬度容易地控制為較佳範圍,故而上述樹脂粒子之材料較佳為使具有乙烯性不飽和基之聚合性單體之1種或2種以上聚合所獲得之聚合物。Since it is possible to design and synthesize any resin particles having physical properties during compression suitable for conductive materials, and the hardness of the substrate particles can be easily controlled to a preferred range, the material of the above resin particles is preferably made of vinyl. A polymer obtained by polymerizing one or two or more types of unsaturated polymerizable monomers.
於使具有乙烯性不飽和基之聚合性單體聚合而獲得上述樹脂粒子之情形時,作為上述具有乙烯性不飽和基之聚合性單體,可列舉非交聯性單體與交聯性單體。When the above-mentioned resin particles are obtained by polymerizing a polymerizable monomer having an ethylenically unsaturated group, examples of the above-mentioned polymerizable monomer having an ethylenically unsaturated group include a non-crosslinkable monomer and a crosslinkable monomer. body.
作為上述非交聯性單體,例如可列舉:苯乙烯、α-甲基苯乙烯等苯乙烯系單體;(甲基)丙烯酸、順丁烯二酸、順丁烯二酸酐等含羧基單體;(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸鯨蠟酯、(甲基)丙烯酸硬脂酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸異𦯉酯等(甲基)丙烯酸烷基酯化合物;(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸甘油酯、聚氧乙烯(甲基)丙烯酸酯、(甲基)丙烯酸縮水甘油酯等含有氧原子之(甲基)丙烯酸酯化合物;(甲基)丙烯腈等含有腈之單體;乙酸乙烯酯、丁酸乙烯酯、月桂酸乙烯酯、硬脂酸乙烯酯等酸乙烯酯化合物;乙烯、丙烯、異丁烯、丁二烯等不飽和烴;(甲基)丙烯酸三氟甲酯、(甲基)丙烯酸五氟乙酯、氯乙烯、氟乙烯、氯苯乙烯等含有鹵素之單體等。Examples of the non-crosslinkable monomers include styrene-based monomers such as styrene and α-methylstyrene; and carboxyl group-containing monomers such as (meth)acrylic acid, maleic acid, and maleic anhydride. body; methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, (meth)acrylate Alkyl (meth)acrylate compounds such as lauryl acrylate, cetyl (meth)acrylate, stearyl (meth)acrylate, cyclohexyl (meth)acrylate, and iso(meth)acrylate; (Meth)acrylate compounds containing oxygen atoms such as 2-hydroxyethyl (meth)acrylate, glycerol (meth)acrylate, polyoxyethylene (meth)acrylate, and glycidyl (meth)acrylate; Nitrile-containing monomers such as (meth)acrylonitrile; acid vinyl ester compounds such as vinyl acetate, vinyl butyrate, vinyl laurate, and vinyl stearate; unsaturated such as ethylene, propylene, isobutylene, butadiene, etc. Hydrocarbon; trifluoromethyl (meth)acrylate, pentafluoroethyl (meth)acrylate, vinyl chloride, vinyl fluoride, chlorostyrene and other halogen-containing monomers, etc.
作為上述交聯性單體,例如可列舉:四羥甲基甲烷四(甲基)丙烯酸酯、四羥甲基甲烷三(甲基)丙烯酸酯、四羥甲基甲烷二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、甘油三(甲基)丙烯酸酯、甘油二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、(聚)1,4-丁二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等多官能(甲基)丙烯酸酯化合物;(異)氰尿酸三烯丙酯、偏苯三酸三烯丙酯、二乙烯基苯、鄰苯二甲酸二烯丙酯、二烯丙基丙烯醯胺、二烯丙醚、γ-(甲基)丙烯醯氧基丙基三甲氧基矽烷、三甲氧基矽烷基苯乙烯、乙烯基三甲氧基矽烷等含有矽烷之單體等。As said crosslinkable monomer, tetramethylolmethane tetra(meth)acrylate, tetramethylolmethane tri(meth)acrylate, tetramethylolmethane di(meth)acrylate, for example , Trimethylolpropane tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, dipentaerythritol penta(meth)acrylate, glycerol tri(meth)acrylate, glycerol di(meth)acrylate ester, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, (poly)1,4-butanediol di(meth)acrylate, 1,4- Polyfunctional (meth)acrylate compounds such as butanediol di(meth)acrylate; (iso)triallyl cyanurate, triallyl trimellitate, divinylbenzene, diphthalate Allyl ester, diallyl acrylamide, diallyl ether, γ-(meth)acryloyloxypropyltrimethoxysilane, trimethoxysilylstyrene, vinyltrimethoxysilane, etc. Silane monomer, etc.
藉由利用公知方法使上述具有乙烯性不飽和基之聚合性單體聚合,可獲得上述樹脂粒子。作為該方法,例如可列舉:於自由基聚合起始劑之存在下進行懸濁聚合之方法、以及使用非交聯之種子粒子與自由基聚合起始劑一起使單體膨潤而進行聚合之方法等。The above-mentioned resin particles can be obtained by polymerizing the above-mentioned polymerizable monomer having an ethylenically unsaturated group by a known method. Examples of this method include a method of carrying out suspension polymerization in the presence of a radical polymerization initiator, and a method of carrying out polymerization by swelling a monomer together with a radical polymerization initiator using non-crosslinked seed particles Wait.
於上述基材粒子為除金屬粒子以外之無機粒子或有機無機混合粒子之情形時,關於作為上述基材粒子之材料的無機物,可列舉二氧化矽、氧化鋁、鈦酸鋇、氧化鋯及碳黑等。上述無機物較佳為並非金屬。作為藉由上述二氧化矽所形成之粒子,並無特別限定,例如可列舉藉由於使具有2個以上水解性烷氧基矽烷基之矽化合物水解而形成交聯聚合物粒子後視需要進行煅燒所獲得之粒子。作為上述有機無機混合粒子,例如可列舉藉由經交聯之烷氧基矽烷基聚合物與丙烯酸系樹脂所形成之有機無機混合粒子等。When the above-mentioned base material particles are inorganic particles other than metal particles or organic-inorganic hybrid particles, the inorganic substances used as the material of the above-mentioned base material particles include silica, alumina, barium titanate, zirconia, and carbon. black etc. It is preferable that the said inorganic substance is not a metal. It does not specifically limit as particle|grains formed by the said silica, For example, by hydrolyzing a silicon compound having two or more hydrolyzable alkoxysilyl groups, forming cross-linked polymer particles and then calcining as necessary obtained particles. As said organic-inorganic hybrid particle, the organic-inorganic hybrid particle etc. which are formed by the crosslinked alkoxysilyl polymer and acrylic resin are mentioned, for example.
上述有機無機混合粒子較佳為具有核與配置於該核之表面上之殼的核殼型有機無機混合粒子。上述核較佳為有機核。上述殼較佳為無機殼。就更有效地降低電極間之連接電阻之觀點而言,上述基材粒子較佳為具有有機核與配置於上述有機核之表面上之無機殼之有機無機混合粒子。The organic-inorganic hybrid particles described above are preferably core-shell organic-inorganic hybrid particles having a core and a shell disposed on the surface of the core. The aforementioned core is preferably an organic core. The above-mentioned shell is preferably an inorganic shell. From the viewpoint of more effectively reducing the connection resistance between electrodes, the base material particles are preferably organic-inorganic hybrid particles having an organic core and an inorganic shell arranged on the surface of the organic core.
作為上述有機核之材料,可列舉上述樹脂粒子之材料等。As a material of the said organic core, the material of the said resin particle etc. are mentioned.
作為上述無機殼之材料,可列舉作為上述基材粒子之材料所列舉之無機物。上述無機殼之材料較佳為二氧化矽。上述無機殼較佳為藉由如下方式形成,即,於上述核之表面上,藉由溶膠凝膠法使金屬烷氧化物成為殼狀物後,對該殼狀物進行煅燒。上述金屬烷氧化物較佳為矽烷烷氧化物。上述無機殼較佳為藉由矽烷烷氧化物而形成。As a material of the said inorganic shell, the inorganic substance mentioned as a material of the said base material particle is mentioned. The material of the above-mentioned inorganic shell is preferably silicon dioxide. The inorganic shell is preferably formed by forming a metal alkoxide into a shell on the surface of the core by a sol-gel method, and then calcining the shell. The above-mentioned metal alkoxide is preferably a silane alkoxide. The above-mentioned inorganic shell is preferably formed by a silane alkoxide.
於上述基材粒子為金屬粒子之情形時,關於作為該金屬粒子之材料的金屬,可列舉銀、銅、鎳、矽、金及鈦等。但,上述基材粒子較佳為並非金屬粒子。When the said base material particle is a metal particle, silver, copper, nickel, silicon, gold, titanium, etc. are mentioned about the metal which is the material of this metal particle. However, it is preferable that the said base material particle is not a metal particle.
上述基材粒子之粒徑較佳為1 μm以上,更佳為2 μm以上,進而較佳為超過2.5 μm,尤佳為3 μm以上,且較佳為1000 μm以下,更佳為100 μm以下,進而較佳為30 μm以下,尤佳為5 μm以下。若上述基材粒子之粒徑為上述下限以上或超過上述下限,則導電性粒子與電極之接觸面積變大,因此電極間之導通可靠性進一步變高,能夠更有效地降低經由導電性粒子連接之電極間之連接電阻。進而於基材粒子之表面形成導電部時不易凝聚,不易形成凝聚之導電性粒子。若上述基材粒子之粒徑為上述上限以下,則導電性粒子容易被充分壓縮,能夠更有效地降低經由導電性粒子連接之電極間之連接電阻。又,即便電極間之間隔變小且導電部之厚度變厚,亦可獲得較小之導電性粒子。The particle size of the substrate particles is preferably 1 μm or more, more preferably 2 μm or more, further preferably more than 2.5 μm, particularly preferably 3 μm or more, and preferably 1000 μm or less, more preferably 100 μm or less , more preferably 30 μm or less, particularly preferably 5 μm or less. When the particle diameter of the said base material particle is more than the said lower limit or exceeds the said lower limit, since the contact area of the electroconductive particle and the electrode becomes large, the conduction reliability between electrodes becomes further high, and the connection via electroconductive particle can be reduced more effectively The connection resistance between the electrodes. Furthermore, when forming a conductive part on the surface of a base material particle, it is difficult to aggregate, and it becomes difficult to form aggregated electroconductive particle. When the particle diameter of the said base material particle is below the said upper limit, electroconductive particle becomes easy to fully compress, and the connection resistance between electrodes connected via electroconductive particle can be reduced more effectively. Moreover, even if the space|interval between electrodes becomes small and the thickness of an electroconductive part becomes thick, small electroconductive particle can be obtained.
上述基材粒子之粒徑於基材粒子為真球狀之情形時表示直徑,於基材粒子並非真球狀之情形時表示最大直徑。The particle diameter of the above-mentioned substrate particles indicates the diameter when the substrate particles are true spherical, and represents the maximum diameter when the substrate particles are not true spherical.
上述基材粒子之粒徑表示數量平均粒徑。上述基材粒子之粒徑係使用粒度分佈測定裝置等而求出。基材粒子之粒徑較佳為藉由利用電子顯微鏡或光學顯微鏡對任意之50個基材粒子進行觀察並算出平均值而求出。於導電性粒子中,於測定上述基材粒子之粒徑之情形時,例如可以如下方式測定。The particle diameter of the above-mentioned base material particle represents the number average particle diameter. The particle diameter of the said base material particle is calculated|required using a particle size distribution measuring apparatus etc.. The particle diameter of the base material particles is preferably determined by observing 50 arbitrary base material particles with an electron microscope or an optical microscope and calculating an average value. In electroconductive particle, when measuring the particle diameter of the said base material particle, it can measure as follows, for example.
將導電性粒子以含量成為30重量%之方式添加至Kulzer公司製造之「Technovit 4000」中並使其分散,製作導電性粒子檢查用埋入樹脂。以通過檢查用埋入樹脂中分散之導電性粒子之中心附近之方式,使用離子研磨裝置(日立高新技術公司製造之「IM4000」)切取導電性粒子之剖面。繼而,使用場發射型掃描式電子顯微鏡(FE-SEM),將圖像倍率設定為25000倍,隨機選擇50個導電性粒子,對各導電性粒子之基材粒子進行觀察。測量各導電性粒子之基材粒子之粒徑,將其等進行平均而作為基材粒子之粒徑。The conductive particles were added to "Technovit 4000" manufactured by Kulzer Co., Ltd. in a content of 30% by weight, and were dispersed to prepare an embedded resin for conductive particle inspection. A cross section of the conductive particles was cut out using an ion mill (“IM4000” manufactured by Hitachi High-Technologies Corporation) so as to pass through the vicinity of the center of the conductive particles dispersed in the embedded resin for inspection. Then, using a field emission scanning electron microscope (FE-SEM), the image magnification was set to 25000 times, 50 electroconductive particles were randomly selected, and the substrate particles of each electroconductive particle were observed. The particle diameter of the base material particle of each electroconductive particle was measured, and these were averaged, and it was set as the particle diameter of the base material particle.
(第1導電部及第2導電部) 上述導電性粒子具有第1導電部。作為上述第1導電部之材料的金屬並無特別限定。作為上述金屬,例如可列舉:金、銀、鈀、銅、鉑、鋅、鐵、錫、鉛、鋁、鈷、銦、鎳、鉻、鈦、銻、鉍、鉈、鍺、鎘、矽及該等之合金等。又,作為上述金屬,可列舉摻錫氧化銦(ITO)及焊料等。作為上述第1導電部之材料的金屬可僅使用1種,亦可併用2種以上。(1st electroconductive part and 2nd electroconductive part) The said electroconductive particle has a 1st electroconductive part. The metal used as the material of the above-mentioned first conductive portion is not particularly limited. Examples of the above-mentioned metals include gold, silver, palladium, copper, platinum, zinc, iron, tin, lead, aluminum, cobalt, indium, nickel, chromium, titanium, antimony, bismuth, thallium, germanium, cadmium, silicon and Such alloys, etc. Moreover, as said metal, a tin-doped indium oxide (ITO), a solder, etc. are mentioned. Only one type of metal may be used as the material of the first conductive portion, or two or more types may be used in combination.
就更有效地提高電極間之導通可靠性之觀點而言,作為上述第1導電部之材料的金屬較佳為含有錫之合金、鎳、鈀、銅或金,更佳為鎳或鈀。From the viewpoint of more effectively improving conduction reliability between electrodes, the metal used as the material of the first conductive portion is preferably an alloy containing tin, nickel, palladium, copper or gold, more preferably nickel or palladium.
就更有效地提高電極間之導通可靠性之觀點而言,上述第1導電部較佳為含有鎳及磷。上述第1導電部較佳為含有鎳之導電部,較佳為含有鎳作為主金屬。上述第1導電部100重量%中之鎳之含量較佳為10重量%以上,更佳為50重量%以上,進一步較佳為60重量%以上,進而較佳為70重量%以上,尤佳為90重量%以上。上述第1導電部100重量%中之鎳之含量可為97重量%以上,可為97.5重量%以上,亦可為98重量%以上。若上述第1導電部之鎳之含量為上述下限以上,則能夠更有效地提高電極間之導通可靠性。It is preferable that the said 1st electroconductive part contains nickel and phosphorus from a viewpoint of improving the conduction|electrical_connection reliability between electrodes more effectively. It is preferable that the said 1st conductive part is a conductive part containing nickel, and it is preferable that it contains nickel as a main metal. The content of nickel in 100 wt % of the first conductive portion is preferably 10 wt % or more, more preferably 50 wt % or more, further preferably 60 wt % or more, further preferably 70 wt % or more, particularly preferably 90% by weight or more. The content of nickel in 100 wt % of the first conductive portion may be 97 wt % or more, 97.5 wt % or more, or 98 wt % or more. When the content of nickel in the first conductive portion is equal to or more than the lower limit, the conduction reliability between electrodes can be more effectively improved.
上述第1導電部100重量%中之磷之含量較佳為0.1重量%以上,更佳為0.5重量%以上,且較佳為15重量%以下,更佳為10重量%以下。若上述第1導電部之磷之含量為上述下限以上及上述上限以下,則電極間之連接電阻更有效地變低。The content of phosphorus in 100 wt % of the first conductive portion is preferably 0.1 wt % or more, more preferably 0.5 wt % or more, and preferably 15 wt % or less, more preferably 10 wt % or less. The connection resistance between electrodes becomes low more effectively that content of phosphorus in the said 1st electroconductive part is more than the said minimum and below the said upper limit.
就更有效地提高電極間之導通可靠性之觀點、及更有效地防止因外部衝擊所致之導電部之破裂之觀點而言,較佳為於上述第1導電部之厚度方向上,上述第1導電部中之上述第2導電部側之磷之含量多於上述第1導電部中之上述基材粒子側之磷之含量。From the viewpoint of more effectively improving the conduction reliability between electrodes, and from the viewpoint of more effectively preventing breakage of the conductive portion due to external impact, it is preferable that the above-mentioned first conductive portion has a thickness in the thickness direction of the above-mentioned first conductive portion. The content of phosphorus on the side of the second conductive portion in the 1 conductive portion is greater than the content of phosphorus on the side of the substrate particle in the first conductive portion.
第1導電部之自第2導電部側至朝向內側厚度1/2為止之區域(外表面側之厚度50%之區域)100重量%中之磷之含量較佳為多於第1導電部之自基材粒子側至朝向外側厚度1/2為止之區域(內表面側之厚度50%之區域)100重量%中之磷之含量。藉由使上述外表面側之厚度50%之區域100重量%中之磷之含量多於上述內表面側之厚度50%之區域100重量%中之磷之含量,能夠更有效地提高電極間之導通可靠性,且能夠更有效地防止因外部衝擊所致之導電部之破裂。It is preferable that the content of phosphorus in 100 wt % of the region from the second conductive portion side to 1/2 of the thickness of the inner side (the region with a thickness of 50% on the outer surface side) of the first conductive portion is more than that of the first conductive portion. The content of phosphorus in 100% by weight of the region from the base material particle side to 1/2 of the thickness toward the outside (region of thickness 50% on the inner surface side). By making the content of phosphorus in 100 wt % of the region with a thickness of 50% on the outer surface side more than that in the region with a thickness of 50 % on the inner surface side of 100 wt %, it is possible to more effectively improve the gap between electrodes. Conduction reliability, and can more effectively prevent the breakage of the conductive part due to external impact.
第1導電部之自第2導電部側至朝內側厚度1/2為止之區域(外表面側之厚度50%之區域)100重量%中之磷之含量較佳為1重量%以上,更佳為3重量%以上,且較佳為15重量%以下,更佳為10重量%以下。若上述外表面側之厚度50%之區域100重量%中之磷之含量為上述下限以上及上述上限以下,則能夠更有效地提高電極間之導通可靠性,且能夠更有效地防止因外部衝擊所致之導電部之破裂。The content of phosphorus in 100% by weight of the region from the second conductive portion side to half of the thickness toward the inner side (the region with a thickness of 50% on the outer surface side) of the first conductive portion is preferably 1% by weight or more, more preferably It is 3% by weight or more, preferably 15% by weight or less, and more preferably 10% by weight or less. When the content of phosphorus in 100% by weight of the region with a thickness of 50% on the outer surface side is more than or equal to the above lower limit and less than or equal to the above upper limit, the conduction reliability between electrodes can be more effectively improved, and an external impact can be more effectively prevented. The resulting rupture of the conductive part.
第1導電部之自基材粒子側至朝向外側厚度1/2為止之區域(內表面側之厚度50%之區域)100重量%中之磷之含量較佳為0.1重量%以上,更佳為0.5重量%以上,且較佳為10重量%以下,更佳為5重量%以下。若上述內表面側之厚度50%之區域100重量%中之磷之含量為上述下限以上及上述上限以下,則能夠更有效地提高電極間之導通可靠性,且能夠更有效地防止因外部衝擊所致之導電部之破裂。The content of phosphorus in 100 wt % of the region from the substrate particle side to 1/2 of the thickness toward the outer side (the region with a thickness of 50% on the inner surface side) of the first conductive portion is preferably 0.1 wt % or more, more preferably 0.1 wt % or more. 0.5% by weight or more, preferably 10% by weight or less, more preferably 5% by weight or less. When the content of phosphorus in 100% by weight of the region with a thickness of 50% on the inner surface side is not less than the above lower limit and not more than the above upper limit, the conduction reliability between electrodes can be more effectively improved, and an external impact can be prevented more effectively The resulting rupture of the conductive part.
上述磷之含量可使用聚焦離子束,製作導電性粒子之薄膜切片,使用場發射型透過電子顯微鏡(日本電子公司製造之「JEM-2010FEF」),藉由能量分散型X射線分析裝置(EDS)進行測定。The content of phosphorus can be determined by using a focused ion beam to prepare thin film slices of conductive particles, using a field emission type transmission electron microscope (“JEM-2010FEF” manufactured by JEOL Ltd.), and using an energy dispersive X-ray analyzer (EDS) to measure.
上述第1導電部之厚度較佳為100 nm以上,更佳為150 nm以上,且較佳為300 nm以下,更佳為250 nm以下。若上述第1導電部之厚度為上述下限以上及上述上限以下,則電極間之連接電阻更有效地變低。上述第1導電部之厚度係指形成有上述第1導電部之部分之厚度,不包含未形成上述第1導電部之部分。上述第1導電部之厚度表示導電性粒子之第1導電部之平均厚度。The thickness of the first conductive portion is preferably 100 nm or more, more preferably 150 nm or more, and preferably 300 nm or less, more preferably 250 nm or less. When the thickness of the said 1st electroconductive part is more than the said minimum and below the said upper limit, the connection resistance between electrodes becomes low more effectively. The thickness of the said 1st electroconductive part means the thickness of the part in which the said 1st electroconductive part was formed, and does not include the part which did not form the said 1st electroconductive part. The thickness of the said 1st electroconductive part shows the average thickness of the 1st electroconductive part of electroconductive particle.
上述第1導電部之厚度例如可藉由使用透過型電子顯微鏡(TEM)對導電性粒子之剖面進行觀察而測定。The thickness of the said 1st electroconductive part can be measured by observing the cross section of electroconductive particle using a transmission electron microscope (TEM), for example.
上述導電性粒子具有第2導電部。上述第2導電部較佳為含有金、銀、鈀、鉑、銅、鈷、釕、銦、或錫,更佳為含有金或銀,進而較佳為含有金。The said electroconductive particle has a 2nd electroconductive part. The second conductive portion preferably contains gold, silver, palladium, platinum, copper, cobalt, ruthenium, indium, or tin, more preferably gold or silver, and still more preferably gold.
作為可用於上述第2導電部之金屬,可列舉:金、銀、銅、鉑、鋅、鐵、錫、鉛、鋁、鈷、銦、鎳、鈀、鉻、鈦、銻、鉍、鉈、鍺、鎘、矽、鎢、鉬及摻錫氧化銦(ITO)等。該等金屬可僅使用1種,亦可併用2種以上。Examples of metals that can be used for the second conductive portion include gold, silver, copper, platinum, zinc, iron, tin, lead, aluminum, cobalt, indium, nickel, palladium, chromium, titanium, antimony, bismuth, thallium, Germanium, cadmium, silicon, tungsten, molybdenum and tin-doped indium oxide (ITO), etc. Only one type of these metals may be used, or two or more types may be used in combination.
上述第2導電部較佳為含有金之導電部,較佳為含有金作為主金屬。上述第2導電部100重量%中之金之含量較佳為10重量%以上,更佳為50重量%以上,進一步較佳為60重量%以上,進而較佳為70重量%以上,尤佳為90重量%以上。上述第2導電部100重量%中之金之含量可為97重量%以上,可為97.5重量%以上,亦可為98重量%以上。若上述第2導電部之金之含量為上述下限以上,則能夠更有效地降低電極間之連接電阻。The second conductive portion is preferably a conductive portion containing gold, and preferably contains gold as a main metal. The content of gold in 100 wt % of the second conductive portion is preferably 10 wt % or more, more preferably 50 wt % or more, further preferably 60 wt % or more, further preferably 70 wt % or more, particularly preferably 90% by weight or more. The content of gold in 100 wt % of the second conductive portion may be 97 wt % or more, 97.5 wt % or more, or 98 wt % or more. If the content of gold in the second conductive portion is equal to or greater than the lower limit, the connection resistance between electrodes can be reduced more effectively.
就更有效地提高電極間之導通可靠性之觀點、及更有效地防止因外部衝擊所致之導電部之破裂之觀點而言,上述第1導電部中所含之金屬之離子化傾向較佳為大於上述第2導電部中所含之金屬之離子化傾向。The ionization tendency of the metal contained in the above-mentioned first conductive portion is preferable from the viewpoint of more effective improvement of conduction reliability between electrodes and from the viewpoint of more effective prevention of breakage of the conductive portion due to external impact It is larger than the ionization tendency of the metal contained in the said 2nd electroconductive part.
上述第2導電部之厚度較佳為20 nm以上,更佳為25 nm以上,且較佳為40 nm以下,更佳為35 nm以下。若上述第2導電部之厚度為上述下限以上及上述上限以下,則電極間之連接電阻更有效地變低。上述第2導電部之厚度係指形成有上述第2導電部之部分之厚度,不包含未形成上述第2導電部之部分。上述第2導電部之厚度表示導電性粒子之第2導電部之平均厚度。The thickness of the second conductive portion is preferably 20 nm or more, more preferably 25 nm or more, and preferably 40 nm or less, more preferably 35 nm or less. The connection resistance between electrodes becomes low more effectively that the thickness of the said 2nd electroconductive part is more than the said minimum and below the said upper limit. The thickness of the second conductive portion refers to the thickness of the portion where the second conductive portion is formed, and does not include the portion where the second conductive portion is not formed. The thickness of the said 2nd electroconductive part shows the average thickness of the 2nd electroconductive part of electroconductive particle.
上述第2導電部之厚度例如可藉由使用透過型電子顯微鏡(TEM)對導電性粒子之剖面進行觀察而測定。The thickness of the said 2nd electroconductive part can be measured by observing the cross section of electroconductive particle using a transmission electron microscope (TEM), for example.
形成上述第1導電部及上述第2導電部之方法並無特別限定。作為形成上述第1導電部及上述第2導電部之方法,例如可列舉:利用無電解鍍覆之方法、利用電鍍之方法、利用物理蒸鍍之方法、以及將金屬粉末或包含金屬粉末與黏合劑之漿料塗佈於基材粒子之表面之方法等。由於導電部之形成較為簡便,故而較佳為利用無電解鍍覆之方法。作為上述利用物理蒸鍍之方法,可列舉真空蒸鍍、離子鍍覆及離子濺鍍等方法。The method of forming the said 1st conductive part and the said 2nd conductive part is not specifically limited. Examples of methods for forming the first conductive portion and the second conductive portion include a method by electroless plating, a method by electroplating, a method by physical vapor deposition, and bonding of metal powder or containing metal powder to The method of coating the slurry of the agent on the surface of the substrate particles, etc. Since the formation of the conductive portion is relatively simple, it is preferable to use the method of electroless plating. As a method by the above-mentioned physical vapor deposition, methods, such as vacuum vapor deposition, ion plating, and ion sputtering, are mentioned.
作為控制上述第1導電部中之鎳及磷之含量之方法,可列舉以下之方法等。於藉由無電解鍍鎳形成第1導電部時,控制鍍鎳液之pH值之方法。於藉由無電解鍍鎳形成第1導電部時,調整含磷還原劑之濃度之方法。調整鍍鎳液中之鎳濃度之方法。As a method of controlling the content of nickel and phosphorus in the above-mentioned first conductive portion, the following methods and the like are exemplified. A method of controlling the pH of a nickel plating solution when the first conductive portion is formed by electroless nickel plating. A method of adjusting the concentration of a phosphorus-containing reducing agent when the first conductive portion is formed by electroless nickel plating. A method for adjusting the nickel concentration in a nickel plating solution.
上述導電性粒子之製造方法包括如下步驟:使用具備基材粒子與配置於上述基材粒子之表面上之第1導電部的導電性粒子,藉由鍍覆處理於上述第1導電部之外表面上配置第2導電部。藉由該步驟,可獲得於上述第1導電部之外表面上具備上述第2導電部之導電性粒子。The manufacturing method of the said electroconductive particle comprises the process of using the electroconductive particle provided with the base material particle and the 1st electroconductive part arrange|positioned on the surface of the said base material particle, and performing a plating process on the outer surface of the said 1st electroconductive part The second conductive portion is disposed on the top. By this process, the electroconductive particle provided with the said 2nd electroconductive part on the outer surface of the said 1st electroconductive part can be obtained.
於形成上述第1導電部時,較佳為於上述第1導電部之厚度方向上使上述第1導電部中之上述第2導電部側之磷之含量多於上述第1導電部中之上述基材粒子側之磷之含量。藉由利用上述較佳之態樣形成上述第1導電部,能夠更有效地提高電極間之導通可靠性,且能夠更有效地防止因外部衝擊所致之導電部之破裂。於上述第1導電部之厚度方向上,使上述第1導電部中之上述第2導電部側之磷之含量多於上述第1導電部中之上述基材粒子側之磷之含量,藉此可抑制作為上述第1導電部之材料的金屬(例如鎳等)之溶出。作為結果,能夠更有效地抑制上述第1導電部中之針孔之產生,且能夠更有效地防止因外部衝擊所致之導電部之破裂。When forming the first conductive portion, it is preferable that the content of phosphorus on the side of the second conductive portion in the first conductive portion is higher than that in the first conductive portion in the thickness direction of the first conductive portion. Phosphorus content on the particle side of the substrate. By forming the above-mentioned first conductive portion using the above-described preferred aspect, the conduction reliability between electrodes can be more effectively improved, and the breakage of the conductive portion due to external impact can be more effectively prevented. In the thickness direction of the first conductive portion, the content of phosphorus on the side of the second conductive portion in the first conductive portion is greater than the content of phosphorus on the side of the base material particle in the first conductive portion, thereby Elution of the metal (for example, nickel etc.) which is the material of the said 1st electroconductive part can be suppressed. As a result, the generation of pinholes in the first conductive portion can be more effectively suppressed, and the breakage of the conductive portion due to external impact can be more effectively prevented.
就更有效地提高電極間之導通可靠性之觀點、及更有效地防止因外部衝擊所致之導電部之破裂之觀點而言,於形成上述第2導電部之鍍覆處理中,較佳為將置換鍍金與還原鍍金併用。於形成上述第2導電部時,藉由將置換鍍金與還原鍍金併用,可抑制作為上述第1導電部之材料的金屬(例如鎳等)之溶出。作為結果,能夠更有效地抑制上述第1導電部中之針孔之產生,且能夠更有效地防止因外部衝擊所致之導電部之破裂。From the viewpoint of more effectively improving the conduction reliability between electrodes, and from the viewpoint of more effectively preventing breakage of the conductive portion due to external impact, in the plating treatment for forming the second conductive portion, it is preferable to Use both replacement gold plating and reduction gold plating. When forming the said 2nd electroconductive part, the elution of the metal (for example, nickel etc.) which is a material of the said 1st electroconductive part can be suppressed by using both substitution gold plating and reduction gold plating. As a result, the generation of pinholes in the first conductive portion can be more effectively suppressed, and the breakage of the conductive portion due to external impact can be more effectively prevented.
又,作為抑制作為上述第1導電部之材料的金屬(例如鎳等)之溶出之其他方法,可列舉於進行形成上述第2導電部之鍍覆處理之前,預先進行鍍鎳之方法。藉由預先進行鍍鎳,可將藉由形成上述第2導電部之鍍覆處理(置換鍍金及還原鍍金)而溶出之溶出用鎳預先配置於上述第1導電部之表面上。於形成上述第2導電部之鍍覆處理(置換鍍金及還原鍍金)時,藉由使溶出用鎳溶出,可抑制作為上述第1導電部之材料的金屬(例如鎳等)之溶出。作為結果,能夠更有效地抑制上述第1導電部中之針孔之產生,且能夠更有效地防止因外部衝擊所致之導電部之破裂。Moreover, as another method of suppressing the elution of the metal (for example, nickel etc.) which is the material of the said 1st conductive part, the method of performing nickel plating in advance before performing the plating process which forms the said 2nd conductive part is mentioned. By performing nickel plating in advance, the nickel for elution eluted by the plating treatment (substitution gold plating and reduction gold plating) for forming the second conductive portion can be preliminarily disposed on the surface of the first conductive portion. In the plating treatment (substitution gold plating and reduction gold plating) for forming the second conductive portion, the elution of the metal (eg, nickel, etc.) which is the material of the first conductive portion can be suppressed by elution of nickel for elution. As a result, the generation of pinholes in the first conductive portion can be more effectively suppressed, and the breakage of the conductive portion due to external impact can be more effectively prevented.
就更有效地提高電極間之導通可靠性之觀點、及更有效地防止因外部衝擊所致之導電部之破裂之觀點而言,上述導電性粒子之製造方法較佳為將上述方法加以組合。具體而言,較佳為將下述(第1構成)、(第2構成)、及(第3構成)加以組合。(第1構成)上述導電性粒子之製造方法係於上述第1導電部之厚度方向上,使上述第1導電部中之上述第2導電部側之磷之含量多於上述第1導電部中之上述基材粒子側之磷之含量。(第2構成)形成上述第2導電部之鍍覆處理係將置換鍍金與還原鍍金併用。(第3構成)於進行形成上述第2導電部之鍍覆處理之前預先進行鍍鎳。藉由將上述所有構成加以組合,可以如下方式形成上述第2導電部:於利用電子顯微鏡對上述第2導電部之外表面進行觀察時,不存在最大長度方向之尺寸為50 nm以上之針孔,或以1個/μm2 以下存在最大長度方向之尺寸為50 nm以上之針孔。It is preferable that the manufacturing method of the said electroconductive particle combines the said method from a viewpoint of improving the conduction reliability between electrodes more effectively, and a viewpoint of preventing the breakage of the electroconductive part by external impact more effectively. Specifically, it is preferable to combine the following (1st structure), (2nd structure), and (3rd structure). (1st structure) The manufacturing method of the said electroconductive particle makes the content of phosphorus on the side of the said 2nd electroconductive part in the said 1st electroconductive part more than in the said 1st electroconductive part in the thickness direction of the said 1st electroconductive part The phosphorus content on the particle side of the above-mentioned substrate. (Second configuration) The plating treatment for forming the second conductive portion is a combination of substitution gold plating and reduction gold plating. (3rd structure) Nickel plating is performed in advance before performing the plating process which forms the said 2nd electroconductive part. By combining all the above-mentioned structures, the above-mentioned second conductive portion can be formed as follows: when the outer surface of the above-mentioned second conductive portion is observed with an electron microscope, there is no pinhole with a size of 50 nm or more in the maximum longitudinal direction. , or there are pinholes with a size of 50 nm or more in the maximum length direction at 1/μm 2 or less.
(芯物質) 上述導電性粒子較佳為於上述第1導電部及上述第2導電部之外表面具有複數個突起。藉由上述導電性粒子於上述第1導電部及上述第2導電部之外表面具有複數個突起,可進一步提高電極間之導通可靠性。多數情況下,於藉由上述導電性粒子所連接之電極之表面形成有氧化覆膜。進而,多數情況下,於上述導電性粒子之上述第1導電部及上述第2導電部之表面形成有氧化覆膜。藉由使用具有上述突起之導電性粒子,於在電極間配置導電性粒子後藉由進行壓接而利用突起將氧化覆膜有效地排除。因此,可使電極與導電性粒子更確實地接觸,可使電極間之連接電阻更有效地變低。進而,於上述導電性粒子在表面具有絕緣性物質之情形、或使導電性粒子分散於黏合劑樹脂中作為導電材料使用之情形時,藉由導電性粒子之突起而將導電性粒子與電極之間的樹脂有效地排除。因此,能夠更有效地提高電極間之導通可靠性。(Core substance) It is preferable that the said electroconductive particle has a some processus|protrusion on the outer surface of the said 1st electroconductive part and the said 2nd electroconductive part. By having the said electroconductive particle in the outer surface of the said 1st electroconductive part and the said 2nd electroconductive part several protrusions, the conduction|electrical_connection reliability between electrodes can be improved further. In many cases, an oxide film is formed on the surface of the electrode connected by the said electroconductive particle. Furthermore, an oxide film is formed in the surface of the said 1st electroconductive part of the said electroconductive particle and the said 2nd electroconductive part in many cases. By using the electroconductive particle which has the said protrusion, after arrange|positioning electroconductive particle between electrodes, it can remove|eliminate an oxide film efficiently by a protrusion and press-bond. Therefore, the electrode and the electroconductive particle can be brought into contact with each other more reliably, and the connection resistance between the electrodes can be lowered more effectively. Furthermore, when the conductive particles have an insulating substance on the surface, or when the conductive particles are dispersed in a binder resin and used as a conductive material, the conductive particles and the electrodes are formed by the protrusions of the conductive particles. The resin in between is effectively excluded. Therefore, the conduction reliability between electrodes can be improved more effectively.
藉由使上述芯物質埋入至上述第1導電部及上述第2導電部中,可於上述第1導電部及上述第2導電部之外表面容易地形成複數個突起。但,為了於上述第1導電部及上述第2導電部之表面形成突起,亦可未必使用芯物質。By embedding the core material in the first conductive portion and the second conductive portion, a plurality of protrusions can be easily formed on the outer surfaces of the first conductive portion and the second conductive portion. However, in order to form a protrusion on the surface of the said 1st electroconductive part and the said 2nd electroconductive part, it is not necessary to use a core substance.
作為形成上述突起之方法,可列舉:於使芯物質附著於基材粒子之表面後,藉由無電解鍍覆形成第1導電部及第2導電部之方法;以及藉由無電解鍍覆於基材粒子之表面形成第1導電部後,使芯物質附著,進而藉由無電解鍍覆形成第2導電部之方法等。作為形成上述突起之其他方法,可列舉:於在基材粒子之表面上形成第1導電部後,於該第1導電部上配置芯物質,其次形成第2導電部之方法;以及於在基材粒子之表面上形成導電部(第1導電部或第2導電部等)之中途階段,添加芯物質之方法等。又,為了形成突起,亦可使用如下方法等:不使用上述芯物質,而於藉由無電解鍍覆在基材粒子形成第1導電部後,於第1導電部之表面上使鍍層呈突起狀析出,進而藉由無電解鍍覆形成第2導電部。As a method of forming the above-mentioned protrusions, after attaching the core material to the surface of the base material particles, a method of forming the first conductive portion and the second conductive portion by electroless plating, and electroless plating on the After forming a 1st conductive part on the surface of a base material particle, the method of attaching a core substance, and forming a 2nd conductive part by electroless plating, etc., is performed. Other methods of forming the protrusions include: after forming the first conductive portion on the surface of the substrate particle, disposing a core material on the first conductive portion, and then forming the second conductive portion; In the middle stage of forming the conductive portion (first conductive portion or second conductive portion, etc.) on the surface of the material particle, the method of adding the core substance, etc. In addition, in order to form the protrusions, a method of forming protrusions on the surface of the first conductive parts after forming the first conductive parts on the substrate particles by electroless plating without using the above-mentioned core material may also be used. form precipitation, and further the second conductive portion is formed by electroless plating.
作為於上述基材粒子之外表面上配置芯物質之方法,例如可列舉:於基材粒子之分散液中添加芯物質,利用凡得瓦力等使芯物質集聚並附著於基材粒子之表面之方法;以及於加入有基材粒子之容器中添加芯物質,藉由利用容器之旋轉等所產生之機械作用使芯物質附著於基材粒子之表面之方法等。使芯物質集聚並附著於分散液中之基材粒子之表面之方法由於容易控制所附著之芯物質之量,故而較佳。As a method of disposing the core material on the outer surface of the base material particles, for example, adding the core material to the dispersion liquid of the base material particles, and using Van der Waals force or the like to make the core material aggregate and adhere to the surface of the base material particles can be mentioned. The method of adding the core material to the container in which the base material particles are added, and the method of attaching the core material to the surface of the base material particle by using the mechanical action generated by the rotation of the container, etc. The method of agglomerating and adhering the core substance to the surfaces of the substrate particles in the dispersion liquid is preferable because it is easy to control the amount of the adhering core substance.
上述芯物質之材料並無特別限定。作為上述芯物質之材料,例如可列舉導電性物質及非導電性物質。作為上述導電性物質,可列舉金屬、金屬之氧化物、鋅等導電性非金屬及導電性聚合物等。作為上述導電性聚合物,可列舉聚乙炔等。作為上述非導電性物質,可列舉二氧化矽、氧化鋁、鈦酸鋇及氧化鋯等。就能夠提高導電性,進而能夠有效地降低連接電阻而言,上述芯物質較佳為金屬。上述芯物質較佳為金屬粒子。關於作為上述芯物質之材料的金屬,可適當使用作為上述導電材料之材料所列舉之金屬。The material of the above-mentioned core substance is not particularly limited. As a material of the said core substance, a conductive substance and a non-conductive substance are mentioned, for example. As said electroconductive substance, metal, metal oxide, electroconductive nonmetals, such as zinc, electroconductive polymer, etc. are mentioned. As said conductive polymer, polyacetylene etc. are mentioned. As said non-conductive substance, silica, alumina, barium titanate, zirconia, etc. are mentioned. The above-mentioned core material is preferably a metal because the electrical conductivity can be improved and the connection resistance can be effectively reduced. The above-mentioned core substance is preferably metal particles. As the metal used as the material of the above-mentioned core material, the metals listed as the material of the above-mentioned conductive material can be appropriately used.
上述芯物質之材料之莫氏硬度較佳為較高。作為莫氏硬度較高之材料,可列舉:鈦酸鋇(莫氏硬度4.5)、鎳(莫氏硬度5)、二氧化矽(二氧化矽、莫氏硬度6~7)、氧化鈦(莫氏硬度7)、氧化鋯(莫氏硬度8~9)、氧化鋁(莫氏硬度9)、碳化鎢(莫氏硬度9)及金剛石(莫氏硬度10)等。上述芯物質較佳為鎳、二氧化矽、氧化鈦、氧化鋯、氧化鋁、碳化鎢或金剛石,更佳為二氧化矽、氧化鈦、氧化鋯、氧化鋁、碳化鎢或金剛石。上述芯物質進而較佳為氧化鈦、氧化鋯、氧化鋁、碳化鎢或金剛石,尤佳為氧化鋯、氧化鋁、碳化鎢或金剛石。上述芯物質之材料之莫氏硬度較佳為4以上,更佳為5以上,進一步較佳為6以上,進而較佳為7以上,尤佳為7.5以上。The Mohs hardness of the material of the above-mentioned core substance is preferably higher. As materials with higher Mohs hardness, barium titanate (Mohs hardness 4.5), nickel (Mohs hardness 5), silicon dioxide (silicon dioxide, Mohs hardness 6~7), titanium oxide (Mohs hardness 6~7), hardness 7), zirconia (Mohs hardness 8~9), alumina (Mohs hardness 9), tungsten carbide (Mohs hardness 9) and diamond (Mohs hardness 10), etc. The above-mentioned core material is preferably nickel, silicon dioxide, titanium oxide, zirconium oxide, aluminum oxide, tungsten carbide or diamond, more preferably silicon dioxide, titanium oxide, zirconium oxide, aluminum oxide, tungsten carbide or diamond. The above-mentioned core material is further preferably titanium oxide, zirconium oxide, aluminum oxide, tungsten carbide or diamond, particularly preferably zirconium oxide, aluminum oxide, tungsten carbide or diamond. The Mohs hardness of the material of the core material is preferably 4 or more, more preferably 5 or more, still more preferably 6 or more, still more preferably 7 or more, particularly preferably 7.5 or more.
上述芯物質之形狀並無特別限定。芯物質之形狀較佳為塊狀。作為芯物質,可列舉粒子狀之塊、複數個微小粒子凝聚而成之凝聚塊、及不定形之塊等。The shape of the above-mentioned core material is not particularly limited. The shape of the core material is preferably block-like. Examples of the core material include granular agglomerates, agglomerates formed by agglomerating a plurality of fine particles, and indeterminate agglomerates.
上述芯物質之粒徑較佳為0.001 μm以上,更佳為0.05 μm以上,且較佳為0.9 μm以下,更佳為0.2 μm以下。若上述芯物質之粒徑為上述下限以上及上述上限以下,則電極間之連接電阻有效地變低。The particle size of the core substance is preferably 0.001 μm or more, more preferably 0.05 μm or more, and preferably 0.9 μm or less, more preferably 0.2 μm or less. When the particle diameter of the said core substance is more than the said minimum and below the said upper limit, the connection resistance between electrodes becomes low effectively.
上述芯物質之粒徑表示數量平均粒徑。芯物質之粒徑較佳為藉由利用電子顯微鏡或光學顯微鏡對任意之50個芯物質進行觀察並算出平均值而求出。The particle diameter of the above-mentioned core material represents the number average particle diameter. The particle diameter of the core material is preferably determined by observing 50 arbitrary core materials with an electron microscope or an optical microscope and calculating an average value.
上述導電性粒子每1個之上述突起之數量較佳為3個以上,更佳為5個以上。上述突起之數量之上限並無特別限定。上述突起之數量之上限可考慮導電性粒子之粒徑及導電性粒子之用途等而適當選擇。The number of the said protrusion per 1 of the said electroconductive particle becomes like this. Preferably it is 3 or more, More preferably, it is 5 or more. The upper limit of the number of the protrusions is not particularly limited. The upper limit of the number of the above-mentioned protrusions can be appropriately selected in consideration of the particle diameter of the electroconductive particles, the use of the electroconductive particles, and the like.
上述導電性粒子每1個之上述突起之數量較佳為藉由利用電子顯微鏡或光學顯微鏡對任意之50個導電性粒子進行觀察並算出平均值而求出。It is preferable that the number of the said protrusion per 1 of the said electroconductive particle is calculated|required by observing 50 arbitrary electroconductive particles with an electron microscope or an optical microscope, and calculating an average value.
複數個上述突起之高度較佳為0.001 μm以上,更佳為0.05 μm以上,且較佳為0.9 μm以下,更佳為0.2 μm以下。若上述突起之高度為上述下限以上及上述上限以下,則電極間之連接電阻有效地變低。The height of the plurality of protrusions is preferably 0.001 μm or more, more preferably 0.05 μm or more, and preferably 0.9 μm or less, more preferably 0.2 μm or less. When the height of the said protrusion is more than the said minimum and below the said upper limit, the connection resistance between electrodes becomes low effectively.
複數個上述突起之高度較佳為藉由利用電子顯微鏡或光學顯微鏡對任意之50個導電性粒子進行觀察並算出平均值而求出。It is preferable that the height of a plurality of said protrusions is calculated|required by observing 50 arbitrary electroconductive particles with an electron microscope or an optical microscope, and calculating an average value.
(絕緣性物質) 上述導電性粒子較佳為具備配置於上述導電部之表面上之絕緣性物質。於此情形時,若將上述導電性粒子用於電極間之連接,則可進一步防止鄰接之電極間之短路。具體而言,於複數個導電性粒子接觸時,由於在複數個電極間存在絕緣性物質,故而可防止橫向上相鄰之電極間之短路而非上下之電極間之短路。再者,於電極間之連接時,藉由利用2個電極對導電性粒子進行加壓,可容易地排除導電性粒子之導電部與電極之間的絕緣性物質。於上述導電性粒子在導電部之外表面具有複數個突起之情形時,可更容易地排除導電性粒子之導電部與電極之間的絕緣性物質。(Insulating substance) It is preferable that the said electroconductive particle is provided with the insulating substance arrange|positioned on the surface of the said electroconductive part. In this case, if the said electroconductive particle is used for the connection between electrodes, the short circuit between adjacent electrodes can be prevented further. Specifically, when a plurality of electroconductive particles are in contact, since an insulating substance exists between a plurality of electrodes, it is possible to prevent short circuits between electrodes adjacent in the lateral direction rather than short circuits between upper and lower electrodes. Furthermore, at the time of connection between electrodes, by pressurizing electroconductive particle with two electrodes, the insulating substance between the electroconductive part of electroconductive particle and an electrode can be removed easily. When the said electroconductive particle has a plurality of protrusions on the outer surface of an electroconductive part, the insulating substance between the electroconductive part of an electroconductive particle and an electrode can be removed more easily.
就於電極間之壓接時可更容易地排除上述絕緣性物質而言,上述絕緣性物質較佳為絕緣性粒子。It is preferable that the said insulating material is an insulating particle because the said insulating material can be removed more easily at the time of crimping|bonding between electrodes.
作為上述絕緣性物質之材料,可列舉上述樹脂粒子之材料、及作為上述基材粒子之材料所列舉之無機物等。上述絕緣性物質之材料較佳為上述樹脂粒子之材料。上述絕緣性物質較佳為上述樹脂粒子或上述有機無機混合粒子,可為樹脂粒子,亦可為有機無機混合粒子。As a material of the said insulating substance, the material of the said resin particle, and the inorganic substance mentioned as a material of the said base material particle, etc. are mentioned. It is preferable that the material of the said insulating substance is the material of the said resin particle. It is preferable that the said insulating substance is the said resin particle or the said organic-inorganic hybrid particle, and resin particle may be sufficient as it, and an organic-inorganic hybrid particle may be sufficient as it.
作為上述絕緣性物質之其他材料,可列舉聚烯烴化合物、(甲基)丙烯酸酯聚合物、(甲基)丙烯酸酯共聚合物、嵌段聚合物、熱塑性樹脂、熱塑性樹脂之交聯物、熱硬化性樹脂及水溶性樹脂等。上述絕緣性物質之材料可僅使用1種,亦可併用2種以上。As other materials of the above-mentioned insulating substances, polyolefin compounds, (meth)acrylate polymers, (meth)acrylate copolymers, block polymers, thermoplastic resins, cross-linked products of thermoplastic resins, thermal Curable resin and water-soluble resin, etc. As for the material of the said insulating substance, only 1 type may be used, and 2 or more types may be used together.
作為上述聚烯烴化合物,可列舉聚乙烯、乙烯-乙酸乙烯酯共聚物及乙烯-丙烯酸酯共聚物等。作為上述(甲基)丙烯酸酯聚合物,可列舉聚(甲基)丙烯酸甲酯、聚(甲基)丙烯酸十二烷基酯及聚(甲基)丙烯酸硬脂酯等。作為上述嵌段聚合物,可列舉聚苯乙烯、苯乙烯-丙烯酸酯共聚物、SB(styrene-butadiene,苯乙烯-丁二烯)型苯乙烯-丁二烯嵌段共聚物、及SBS(styrene-butadiene-styrene,苯乙烯-丁二烯-苯乙烯)型苯乙烯-丁二烯嵌段共聚物、以及該等之氫化物等。作為上述熱塑性樹脂,可列舉乙烯基聚合物及乙烯基共聚物等。作為上述熱硬化性樹脂,可列舉環氧樹脂、酚樹脂及三聚氰胺樹脂等。作為上述熱塑性樹脂之交聯物,可列舉聚乙二醇甲基丙烯酸酯、烷氧化三羥甲基丙烷甲基丙烯酸酯或烷氧化季戊四醇甲基丙烯酸酯等之導入。作為上述水溶性樹脂,可列舉聚乙烯醇、聚丙烯酸、聚丙烯醯胺、聚乙烯基吡咯啶酮、聚環氧乙烷及甲基纖維素等。又,亦可將鏈轉移劑用於聚合度之調整。作為鏈轉移劑,可列舉硫醇或四氯化碳等。As said polyolefin compound, polyethylene, an ethylene-vinyl acetate copolymer, an ethylene-acrylate copolymer, etc. are mentioned. As said (meth)acrylate polymer, a polymethyl (meth)acrylate, a poly (meth)acrylate lauryl, a poly (meth)acrylate, etc. are mentioned. Examples of the above-mentioned block polymer include polystyrene, styrene-acrylate copolymer, SB (styrene-butadiene) type styrene-butadiene block copolymer, and SBS (styrene-butadiene). -butadiene-styrene, styrene-butadiene-styrene) type styrene-butadiene block copolymer, and their hydrides, etc. As said thermoplastic resin, a vinyl polymer, a vinyl copolymer, etc. are mentioned. As said thermosetting resin, an epoxy resin, a phenol resin, a melamine resin, etc. are mentioned. Examples of the cross-linked product of the thermoplastic resin include introduction of polyethylene glycol methacrylate, alkoxylated trimethylolpropane methacrylate, or alkoxylated pentaerythritol methacrylate. As said water-soluble resin, polyvinyl alcohol, polyacrylic acid, polyacrylamide, polyvinyl pyrrolidone, polyethylene oxide, methyl cellulose, etc. are mentioned. Moreover, a chain transfer agent can also be used for adjustment of a polymerization degree. As a chain transfer agent, a mercaptan, carbon tetrachloride, etc. are mentioned.
作為於上述導電部(第2導電部)之表面上配置絕緣性物質之方法,可列舉化學方法、及物理或機械方法等。作為上述化學方法,例如可列舉界面聚合法、粒子存在下之懸濁聚合法及乳化聚合法等。作為上述物理或機械方法,可列舉利用噴霧乾燥、混合、靜電吸附法、噴霧法、浸漬及真空蒸鍍之方法等。就絕緣性物質不易脫離之方面而言,較佳為於上述第2導電部之表面經由化學鍵結而配置上述絕緣性物質之方法。A chemical method, a physical or mechanical method, etc. are mentioned as a method of disposing an insulating substance on the surface of the said electroconductive part (2nd electroconductive part). As said chemical method, the interfacial polymerization method, the suspension polymerization method in the presence of particles, the emulsion polymerization method, etc. are mentioned, for example. As said physical or mechanical method, the method by spray drying, mixing, electrostatic adsorption method, spray method, immersion, and vacuum vapor deposition, etc. are mentioned. From the viewpoint that the insulating substance is not easily detached, a method of disposing the insulating substance on the surface of the second conductive portion through chemical bonding is preferable.
上述導電部(第2導電部)之外表面、及絕緣性物質之表面亦可分別被具有反應性官能基之化合物被覆。導電部(第2導電部)之外表面與絕緣性物質之表面可直接化學鍵結,亦可藉由具有反應性官能基之化合物而間接地化學鍵結。亦可於對導電部(第2導電部)之外表面導入羧基後,使該羧基經由聚伸乙亞胺等高分子電解質而與絕緣性物質之表面之官能基進行化學鍵結。The outer surface of the said conductive part (2nd conductive part) and the surface of an insulating material may be respectively coat|covered with the compound which has a reactive functional group. The outer surface of the conductive portion (second conductive portion) and the surface of the insulating material may be chemically bonded directly, or may be chemically bonded indirectly through a compound having a reactive functional group. After the carboxyl group is introduced into the outer surface of the conductive part (second conductive part), the carboxyl group may be chemically bonded to the functional group on the surface of the insulating material via a polymer electrolyte such as polyethyleneimine.
上述絕緣性物質之粒徑可根據導電性粒子之粒徑及導電性粒子之用途等而適當選擇。上述絕緣性物質之粒徑較佳為10 nm以上,更佳為100 nm以上,且較佳為4000 nm以下,更佳為2000 nm以下。若絕緣性物質之粒徑為上述下限以上,則於導電性粒子分散至黏合劑樹脂中時,複數個導電性粒子中之導電部彼此不易接觸。若絕緣性物質之粒徑為上述上限以下,則於電極間之連接時,為了將電極與導電性粒子之間的絕緣性物質排除,無需使壓力變得過高,亦無需加熱至高溫。The particle diameter of the said insulating material can be suitably selected according to the particle diameter of an electroconductive particle, the use of an electroconductive particle, etc.. The particle size of the insulating material is preferably 10 nm or more, more preferably 100 nm or more, and preferably 4000 nm or less, more preferably 2000 nm or less. When the particle diameter of an insulating substance is more than the said minimum, when electroconductive particle is disperse|distributed to binder resin, the electroconductive part in a some electroconductive particle will become hard to contact mutually. When the particle diameter of the insulating substance is below the above upper limit, in order to remove the insulating substance between the electrodes and the conductive particles during connection between electrodes, it is not necessary to increase the pressure and to heat to a high temperature.
上述絕緣性物質之粒徑表示數量平均粒徑。上述絕緣性物質之粒徑係使用粒度分佈測定裝置等而求出。絕緣性物質之粒徑較佳為藉由利用電子顯微鏡或光學顯微鏡對任意之50個絕緣性物質進行觀察並算出平均值而求出。於導電性粒子中,於測定絕緣性物質之粒徑之情形時,例如可藉由以下方式測定。The particle diameter of the above-mentioned insulating material represents the number average particle diameter. The particle size of the insulating substance is determined using a particle size distribution analyzer or the like. The particle diameter of the insulating material is preferably determined by observing 50 arbitrary insulating materials with an electron microscope or an optical microscope and calculating an average value. In electroconductive particle, when measuring the particle diameter of an insulating substance, it can measure by the following method, for example.
將導電性粒子以含量成為30重量%之方式添加至Kulzer公司製造之「Technovit 4000」中並使其分散,製作導電性粒子檢查用埋入樹脂。以通過該檢查用埋入樹脂中分散之導電性粒子之中心附近之方式,使用離子研磨裝置(日立高新技術公司製造之「IM4000」)切取導電性粒子之剖面。繼而,使用場發射型掃描式電子顯微鏡(FE-SEM),設定為圖像倍率5萬倍,隨機選擇50個導電性粒子,對各導電性粒子之絕緣性物質進行觀察。測量各導電性粒子中之絕緣性物質之粒徑,將其等進行算術平均而作為絕緣性物質之粒徑。The conductive particles were added to "Technovit 4000" manufactured by Kulzer Co., Ltd. in a content of 30% by weight, and were dispersed to prepare an embedded resin for conductive particle inspection. A cross section of the conductive particles was cut out using an ion mill (“IM4000” manufactured by Hitachi High-Technology Co., Ltd.) so as to pass through the vicinity of the center of the conductive particles dispersed in the embedded resin for inspection. Next, using a field emission scanning electron microscope (FE-SEM), the image magnification was set to 50,000 times, and 50 electroconductive particles were randomly selected, and the insulating substance of each electroconductive particle was observed. The particle diameter of the insulating substance in each electroconductive particle was measured, and the particle diameter of the insulating substance was obtained by arithmetically averaging the particle diameter.
(導電材料) 本發明之導電材料包含上述導電性粒子與黏合劑樹脂。上述導電性粒子較佳為分散於黏合劑樹脂中而使用,較佳為分散於黏合劑樹脂中作為導電材料使用。上述導電材料較佳為各向異性導電材料。上述導電材料較佳為用於電極間之電性連接。上述導電材料較佳為電路連接用導電材料。(Conductive material) The conductive material of this invention contains the said electroconductive particle and a binder resin. It is preferable to disperse|distribute the said electroconductive particle in a binder resin, and it is preferable to use it as a conductive material. The above-mentioned conductive material is preferably an anisotropic conductive material. The above-mentioned conductive materials are preferably used for electrical connection between electrodes. The above-mentioned conductive material is preferably a conductive material for circuit connection.
上述黏合劑樹脂並無特別限定。作為上述黏合劑樹脂,使用公知之絕緣性樹脂。上述黏合劑樹脂較佳為含有熱塑性成分(熱塑性化合物)或硬化性成分,更佳為含有硬化性成分。作為上述硬化性成分,可列舉光硬化性成分及熱硬化性成分。上述光硬化性成分較佳為包含光硬化性化合物及光聚合起始劑。上述熱硬化性成分較佳為包含熱硬化性化合物及熱硬化劑。The above-mentioned binder resin is not particularly limited. As said binder resin, a well-known insulating resin is used. It is preferable that the said binder resin contains a thermoplastic component (thermoplastic compound) or a sclerosing|hardenable component, More preferably, it contains a sclerosing|hardenable component. As said curable component, a photocurable component and a thermosetting component are mentioned. It is preferable that the said photocurable component contains a photocurable compound and a photopolymerization initiator. It is preferable that the said thermosetting component contains a thermosetting compound and a thermosetting agent.
作為上述黏合劑樹脂,例如可列舉乙烯基樹脂、熱塑性樹脂、硬化性樹脂、熱塑性嵌段共聚物及彈性體等。上述黏合劑樹脂可僅使用1種,亦可併用2種以上。As said binder resin, a vinyl resin, a thermoplastic resin, a curable resin, a thermoplastic block copolymer, an elastomer, etc. are mentioned, for example. Only one type of the above-mentioned binder resin may be used, or two or more types may be used in combination.
作為上述乙烯基樹脂,例如可列舉乙酸乙烯酯樹脂、丙烯酸系樹脂及苯乙烯樹脂等。作為上述熱塑性樹脂,例如可列舉聚烯烴樹脂、乙烯-乙酸乙烯酯共聚物及聚醯胺樹脂等。作為上述硬化性樹脂,例如可列舉環氧樹脂、胺基甲酸酯樹脂、聚醯亞胺樹脂及不飽和聚酯樹脂等。再者,上述硬化性樹脂亦可為常溫硬化型樹脂、熱硬化型樹脂、光硬化型樹脂或濕氣硬化型樹脂。上述硬化性樹脂亦可與硬化劑併用。作為上述熱塑性嵌段共聚物,例如可列舉苯乙烯-丁二烯-苯乙烯嵌段共聚物、苯乙烯-異戊二烯-苯乙烯嵌段共聚物、苯乙烯-丁二烯-苯乙烯嵌段共聚物之氫化物、及苯乙烯-異戊二烯-苯乙烯嵌段共聚物之氫化物等。作為上述彈性體,例如可列舉苯乙烯-丁二烯共聚橡膠、及丙烯腈-苯乙烯嵌段共聚橡膠等。As said vinyl resin, a vinyl acetate resin, an acrylic resin, a styrene resin, etc. are mentioned, for example. As said thermoplastic resin, a polyolefin resin, an ethylene-vinyl acetate copolymer, a polyamide resin, etc. are mentioned, for example. As said curable resin, an epoxy resin, a urethane resin, a polyimide resin, an unsaturated polyester resin, etc. are mentioned, for example. In addition, the said curable resin may be room temperature curable resin, thermosetting resin, photocurable resin, or moisture curable resin. The above-mentioned curable resin may be used in combination with a curing agent. Examples of the thermoplastic block copolymers include styrene-butadiene-styrene block copolymers, styrene-isoprene-styrene block copolymers, and styrene-butadiene-styrene block copolymers. Hydrogenated product of block copolymer, hydrogenated product of styrene-isoprene-styrene block copolymer, etc. As said elastomer, a styrene-butadiene copolymer rubber, an acrylonitrile-styrene block copolymer rubber, etc. are mentioned, for example.
上述導電材料除包含上述導電性粒子及上述黏合劑樹脂以外,例如亦可包含填充劑、增量劑、軟化劑、塑化劑、聚合觸媒、硬化觸媒、著色劑、抗氧化劑、熱穩定劑、光穩定劑、紫外線吸收劑、潤滑劑、抗靜電劑及阻燃劑等各種添加劑。In addition to the above-mentioned conductive particles and the above-mentioned binder resin, the above-mentioned conductive material may also include, for example, a filler, an extender, a softener, a plasticizer, a polymerization catalyst, a hardening catalyst, a colorant, an antioxidant, a thermal stabilizer additives, light stabilizers, UV absorbers, lubricants, antistatic agents and flame retardants.
就更有效地降低電極間之連接電阻之觀點、及更有效地提高電極間之導通可靠性之觀點而言,上述導電材料之25℃下之黏度(η25)較佳為20 Pa・s以上,更佳為30 Pa・s以上,且較佳為400 Pa・s以下,更佳為300 Pa・s以下。上述黏度(η25)可藉由調配成分之種類及調配量而適當調整。From the viewpoint of more effectively reducing the connection resistance between the electrodes and more effectively improving the conduction reliability between the electrodes, the viscosity (η25) at 25°C of the above-mentioned conductive material is preferably 20 Pa·s or more, More preferably, it is 30 Pa·s or more, more preferably 400 Pa·s or less, and more preferably 300 Pa·s or less. The above-mentioned viscosity (η25) can be appropriately adjusted by the types and amounts of the ingredients to be prepared.
上述黏度例如可使用E型黏度計(東機產業公司製造之「TVE22L」)等而於25℃及5 rpm之條件下進行測定。The said viscosity can be measured under the conditions of 25 degreeC and 5 rpm using, for example, an E-type viscometer ("TVE22L" by Toki Sangyo Co., Ltd.).
上述導電材料可用作導電膏及導電膜等。於上述導電材料為導電膜之情形時,亦可於含有導電性粒子之導電膜積層不含導電性粒子之膜。上述導電膏較佳為各向異性導電膏。上述導電膜較佳為各向異性導電膜。The above-mentioned conductive materials can be used as conductive pastes, conductive films, and the like. When the said conductive material is a conductive film, the film which does not contain electroconductive particle may be laminated|stacked on the electroconductive particle containing electroconductive film. The above-mentioned conductive paste is preferably anisotropic conductive paste. The above-mentioned conductive film is preferably an anisotropic conductive film.
於上述導電材料100重量%中,上述黏合劑樹脂之含量較佳為10重量%以上,更佳為30重量%以上,進而較佳為50重量%以上,尤佳為70重量%以上,且較佳為99.99重量%以下,更佳為99.9重量%以下。若上述黏合劑樹脂之含量為上述下限以上及上述上限以下,則於電極間有效率地配置導電性粒子,藉由導電材料連接之連接對象構件之連接可靠性進一步提高。In 100% by weight of the conductive material, the content of the binder resin is preferably 10% by weight or more, more preferably 30% by weight or more, more preferably 50% by weight or more, particularly preferably 70% by weight or more, and more preferably Preferably it is 99.99 weight% or less, More preferably, it is 99.9 weight% or less. When content of the said binder resin is more than the said minimum and below the said upper limit, electroconductive particle is efficiently arrange|positioned between electrodes, and the connection reliability of the connection object member connected by a conductive material improves further.
於上述導電材料100重量%中,上述導電性粒子之含量較佳為0.01重量%以上,更佳為0.1重量%以上,且較佳為80重量%以下,更佳為60重量%以下,進而較佳為40重量%以下,尤佳為20重量%以下,最佳為10重量%以下。若上述導電性粒子之含量為上述下限以上及上述上限以下,則電極間之導通可靠性進一步提高。In 100% by weight of the conductive material, the content of the conductive particles is preferably 0.01% by weight or more, more preferably 0.1% by weight or more, and preferably 80% by weight or less, more preferably 60% by weight or less, and more preferably It is preferably 40% by weight or less, more preferably 20% by weight or less, and most preferably 10% by weight or less. The conduction reliability between electrodes will further improve that content of the said electroconductive particle is more than the said minimum and below the said upper limit.
(連接構造體) 藉由使用上述導電性粒子、或使用包含上述導電性粒子與黏合劑樹脂之導電材料將連接對象構件連接,可獲得連接構造體。(Connection structure) A connection structure can be obtained by connecting a connection object member using the said electroconductive particle or the electrically conductive material containing the said electroconductive particle and a binder resin.
上述連接構造體較佳為具備第1連接對象構件、第2連接對象構件、及將第1連接對象構件與第2連接對象構件連接之連接部,且上述連接部之材料為上述導電性粒子、或包含上述導電性粒子與黏合劑樹脂之導電材料。上述連接部較佳為藉由上述導電性粒子形成、或藉由包含上述導電性粒子與黏合劑樹脂之導電材料形成。於使用導電性粒子之情形時,連接部本身為導電性粒子。The connection structure preferably includes a first connection target member, a second connection target member, and a connection portion connecting the first connection target member and the second connection target member, and the material of the connection portion is the conductive particles, Or a conductive material containing the above-mentioned conductive particles and a binder resin. It is preferable that the said connection part is formed by the said electroconductive particle, or it is formed by the electroconductive material containing the said electroconductive particle and a binder resin. When using electroconductive particle, the connection part itself is electroconductive particle.
上述第1連接對象構件較佳為於表面具有第1電極。上述第2連接對象構件較佳為於表面具有第2電極。上述第1電極與上述第2電極較佳為藉由上述導電性粒子而電性連接。It is preferable that the said 1st connection object member has a 1st electrode on the surface. It is preferable that the said 2nd connection object member has a 2nd electrode on the surface. It is preferable that the said 1st electrode and the said 2nd electrode are electrically connected by the said electroconductive particle.
上述連接構造體較佳為具備可撓性構件作為上述第1連接對象構件或上述第2連接對象構件。於此情形時,上述第1連接對象構件及上述第2連接對象構件之至少一者為可撓性構件即可,亦可上述第1連接對象構件及上述第2連接對象構件兩者均為可撓性構件。較佳為於上述可撓性構件彎曲之狀態下使用上述連接構造體。較佳為於上述連接部彎曲之狀態下使用上述連接構造體。It is preferable that the said connection structure is equipped with a flexible member as the said 1st connection object member or the said 2nd connection object member. In this case, at least one of the first connection target member and the second connection target member may be a flexible member, and both the first connection target member and the second connection target member may be flexible. flexible member. It is preferable to use the above-mentioned connecting structure in a state where the above-mentioned flexible member is bent. It is preferable to use the said connection structure in the state which the said connection part was bent.
圖3係模式性地表示使用本發明之第1實施形態之導電性粒子之連接構造體之剖視圖。It is sectional drawing which shows typically the connection structure which used the electroconductive particle of 1st Embodiment of this invention.
圖3所示之連接構造體51具備第1連接對象構件52、第2連接對象構件53、及將第1連接對象構件52與第2連接對象構件53連接之連接部54。連接部54係藉由含有導電性粒子1之導電材料形成。較佳為上述導電材料具有熱硬化性,藉由使導電材料熱硬化而形成連接部54。再者,於圖3中,為方便圖示,導電性粒子1係簡略性地表示。亦可使用導電性粒子21等代替導電性粒子1。The
第1連接對象構件52於表面(上表面)具有複數個第1電極52a。第2連接對象構件53於表面(下表面)具有複數個第2電極53a。第1電極52a與第2電極53a係藉由1個或複數個導電性粒子1而電性連接。因此,第1連接對象構件52及第2連接對象構件53係藉由導電性粒子1而電性連接。The 1st
上述連接構造體之製造方法並無特別限定。作為連接構造體之製造方法之一例,可列舉於第1連接對象構件與第2連接對象構件之間配置上述導電材料而獲得積層體後,對該積層體進行加熱及加壓之方法等。上述熱壓接之壓力相對於進行壓接之面積為0.5×106 Pa~5×106 Pa左右。上述熱壓接之加熱溫度為70℃~230℃左右。上述熱壓接之加熱溫度較佳為80℃以上,更佳為100℃以上,且較佳為200℃以下,更佳為150℃以下。上述熱壓接之壓力較佳為0.5×106 Pa以上,更佳為1×106 Pa以上,且較佳為5×106 Pa以下,更佳為3×106 Pa以下。若上述熱壓接之壓力及溫度為上述下限以上及上述上限以下,則能夠更有效地提高電極間之導通可靠性。The manufacturing method of the said connection structure is not specifically limited. As an example of the manufacturing method of a connection structure, after arrange|positioning the said conductive material between a 1st connection object member and a 2nd connection object member, and obtaining a laminated body, the method of heating and pressurizing this laminated body, etc. are mentioned. The pressure of the above-mentioned thermocompression bonding is about 0.5×10 6 Pa to 5×10 6 Pa relative to the area to be crimped. The heating temperature of the above thermocompression bonding is about 70°C to 230°C. The heating temperature of the thermocompression bonding is preferably 80°C or higher, more preferably 100°C or higher, and preferably 200°C or lower, more preferably 150°C or lower. The pressure of the thermocompression bonding is preferably 0.5×10 6 Pa or higher, more preferably 1×10 6 Pa or higher, and preferably 5×10 6 Pa or lower, more preferably 3×10 6 Pa or lower. The conduction reliability between electrodes can be improved more effectively as the pressure and temperature of the said thermocompression bonding are more than the said lower limit and below the said upper limit.
作為上述連接對象構件,具體而言,可列舉:半導體晶片、電容器及二極體等電子零件、以及印刷基板、可撓性印刷基板、玻璃環氧基板及玻璃基板等電路基板等電子零件等。上述連接對象構件較佳為電子零件。上述導電性粒子較佳為用於電子零件之電極之電性連接。Specific examples of the connection target member include electronic components such as semiconductor chips, capacitors, and diodes, and electronic components such as printed circuit boards, flexible printed circuit boards, glass epoxy substrates, and circuit boards such as glass substrates. It is preferable that the said connection object member is an electronic component. It is preferable that the said electroconductive particle is used for the electrical connection of the electrode of an electronic component.
作為設置於上述連接對象構件之電極,可列舉金電極、鎳電極、錫電極、鋁電極、銀電極、SUS電極、銅電極、鉬電極及鎢電極等金屬電極。於上述連接對象構件為可撓性印刷基板之情形時,上述電極較佳為金電極、鎳電極、錫電極或銅電極。於上述連接對象構件為玻璃基板之情形時,上述電極較佳為鋁電極、銅電極、鉬電極或鎢電極。再者,於上述電極為鋁電極之情形時,可為僅利用鋁所形成之電極,亦可為於金屬氧化物層之表面積層有鋁層之電極。作為上述金屬氧化物層之材料,可列舉摻雜有三價金屬元素之氧化銦及摻雜有三價金屬元素之氧化鋅等。作為上述三價金屬元素,可列舉Sn、Al及Ga等。Metal electrodes such as gold electrodes, nickel electrodes, tin electrodes, aluminum electrodes, silver electrodes, SUS electrodes, copper electrodes, molybdenum electrodes, and tungsten electrodes are exemplified as the electrodes provided on the connection target member. When the connection object member is a flexible printed circuit board, the electrode is preferably a gold electrode, a nickel electrode, a tin electrode or a copper electrode. When the said connection object member is a glass substrate, the said electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode or a tungsten electrode. Furthermore, when the above-mentioned electrode is an aluminum electrode, it may be an electrode formed only by aluminum, or an electrode having an aluminum layer on the surface layer of the metal oxide layer may be used. As a material of the said metal oxide layer, the indium oxide doped with a trivalent metal element, the zinc oxide doped with a trivalent metal element, etc. are mentioned. As said trivalent metal element, Sn, Al, Ga, etc. are mentioned.
以下,列舉實施例及比較例對本發明進行具體說明。本發明並不僅限定於以下之實施例。Hereinafter, the present invention will be specifically described with reference to Examples and Comparative Examples. The present invention is not limited to the following examples.
基材粒子: 基材粒子A:樹脂粒子,二乙烯基苯與丙烯酸異𦯉酯之共聚物樹脂粒子,粒徑:10 μm 基材粒子B:樹脂粒子,二乙烯基苯與丙烯酸異𦯉酯之共聚物樹脂粒子,粒徑:5 μm 基材粒子C:樹脂粒子,二乙烯基苯與丙烯酸異𦯉酯之共聚物樹脂粒子,粒徑:20 μmSubstrate particles: Substrate particles A: resin particles, copolymer resin particles of divinylbenzene and iso-acrylate, particle size: 10 μm Substrate particles B: resin particles, divinylbenzene and iso-acrylate Copolymer resin particles, particle size: 5 μm Substrate particle C: resin particles, copolymer resin particles of divinylbenzene and iso-acrylate, particle size: 20 μm
(實施例1) (1)第1導電部(鎳層)之形成 於使用超音波分散器使10重量份基材粒子A分散於含有5重量%之鈀觸媒液之鹼性溶液100重量份中後,藉由對溶液進行過濾而取出基材粒子A。繼而,將基材粒子A添加至二甲胺硼烷1重量%溶液100重量份中,使基材粒子A之表面活化。於將表面經活化之基材粒子A充分地進行水洗後,添加至蒸餾水500重量份中並使其分散,藉此獲得懸浮液。(Example 1) (1) The first conductive part (nickel layer) was formed by dispersing 10 parts by weight of the substrate particles A in 100 parts by weight of an alkaline solution containing 5% by weight of a palladium catalyst solution using an ultrasonic disperser After the medium, the substrate particles A were taken out by filtering the solution. Next, the substrate particles A were added to 100 parts by weight of a 1% by weight solution of dimethylamine borane to activate the surfaces of the substrate particles A. After the surface-activated base material particle A was sufficiently washed with water, it was added to 500 parts by weight of distilled water and dispersed to obtain a suspension.
又,準備含有硫酸鎳0.25 mol/L、次磷酸鈉0.25 mol/L、及檸檬酸鈉0.15 mol/L之鍍鎳液(pH值9.0)。Furthermore, a nickel plating solution (pH 9.0) containing 0.25 mol/L of nickel sulfate, 0.25 mol/L of sodium hypophosphite, and 0.15 mol/L of sodium citrate was prepared.
一面將所獲得之懸浮液於70℃下進行攪拌,一面將上述鍍鎳液緩緩地滴加至懸浮液中,進行無電解鍍鎳。其後,藉由對懸浮液進行過濾而取出粒子,並進行水洗、乾燥,藉此獲得於基材粒子A之表面配置有第1導電部(鎳-磷層,厚度200 nm)之粒子。導電層100重量%中之鎳之含量為94.5重量%,磷之含量為5.5重量%。While stirring the obtained suspension at 70° C., the above-mentioned nickel plating solution was gradually added dropwise to the suspension to perform electroless nickel plating. Then, the particles were taken out by filtering the suspension, washed with water, and dried to obtain particles with the first conductive portion (nickel-phosphorus layer, thickness 200 nm) disposed on the surface of the substrate particles A. The content of nickel in 100% by weight of the conductive layer was 94.5% by weight, and the content of phosphorus was 5.5% by weight.
(2)第2導電部(金層)之形成 藉由將於基材粒子A之表面配置有第1導電部之粒子10重量份添加至蒸餾水100重量份中並使其分散而獲得懸浮液。又,準備含有氰化金0.03 mol/L、及作為還原劑之氫醌0.1 mol/L之還原鍍金液。一面將所獲得之懸浮液於70℃下進行攪拌,一面將上述還原鍍金液緩緩地滴加至懸浮液中,進行還原鍍金。其後,藉由對懸浮液進行過濾而取出粒子,並進行水洗、乾燥,藉此獲得導電性粒子。於所獲得之導電性粒子中,於上述第1導電部之外表面上配置有第2導電部(金層,厚度31 nm)。圖4中表示實施例1中所製作之導電性粒子之表面之圖像。(2) Formation of the second conductive part (gold layer) A suspension was obtained by adding 10 parts by weight of the particles having the first conductive part arranged on the surface of the substrate particle A to 100 parts by weight of distilled water and dispersing it. Furthermore, a reduction gold plating solution containing 0.03 mol/L of gold cyanide and 0.1 mol/L of hydroquinone as a reducing agent was prepared. While stirring the obtained suspension at 70°C, the above-mentioned reduction gold plating solution was gradually added dropwise to the suspension to perform reduction gold plating. After that, the particles are taken out by filtering the suspension, washed with water, and dried to obtain conductive particles. In the obtained electroconductive particle, the 2nd electroconductive part (gold layer, thickness 31 nm) was arrange|positioned on the outer surface of the said 1st electroconductive part. In FIG. 4, the image of the surface of the electroconductive particle produced in Example 1 is shown.
(實施例2) (1)第1導電部(鎳層)之形成 於使用超音波分散器使10重量份基材粒子B分散於含有5重量%之鈀觸媒液之鹼性溶液100重量份中後,藉由對溶液進行過濾而取出基材粒子B。繼而,將基材粒子B添加至二甲胺硼烷1重量%溶液100重量份中,使基材粒子B之表面活化。於將表面經活化之基材粒子B充分地進行水洗後,添加至蒸餾水500重量份中並使其分散,藉此獲得懸浮液。(Example 2) (1) The first conductive portion (nickel layer) was formed by dispersing 10 parts by weight of the base material particles B in 100 parts by weight of an alkaline solution containing 5% by weight of a palladium catalyst solution using an ultrasonic disperser After the medium, the substrate particles B are taken out by filtering the solution. Next, the substrate particles B were added to 100 parts by weight of a 1% by weight solution of dimethylamine borane to activate the surfaces of the substrate particles B. After the surface-activated base material particles B were sufficiently washed with water, they were added to 500 parts by weight of distilled water and dispersed to obtain a suspension.
又,準備含有硫酸鎳0.25 mol/L、次磷酸鈉0.25 mol/L、及檸檬酸鈉0.15 mol/L之鍍鎳液(pH值9.0)。Furthermore, a nickel plating solution (pH 9.0) containing 0.25 mol/L of nickel sulfate, 0.25 mol/L of sodium hypophosphite, and 0.15 mol/L of sodium citrate was prepared.
一面將所獲得之懸浮液於70℃下進行攪拌,一面將上述鍍鎳液緩緩地滴加至懸浮液中,進行無電解鍍鎳。其後,藉由對懸浮液進行過濾而取出粒子,並進行水洗、乾燥,藉此獲得於基材粒子B之表面配置有第1導電部(鎳-磷層,厚度210 nm)之粒子。導電層100重量%中之鎳之含量為94.5重量%,磷之含量為5.5重量%。While stirring the obtained suspension at 70° C., the above-mentioned nickel plating solution was gradually added dropwise to the suspension to perform electroless nickel plating. Then, the particles were taken out by filtering the suspension, washed with water, and dried to obtain particles in which the first conductive portion (nickel-phosphorus layer, thickness 210 nm) was arranged on the surface of the substrate particles B. The content of nickel in 100% by weight of the conductive layer was 94.5% by weight, and the content of phosphorus was 5.5% by weight.
(2)鍍鎳層之形成 藉由將於基材粒子B之表面配置有第1導電部之粒子10重量份添加至蒸餾水100重量份中並使其分散而獲得懸浮液。又,製備含有硫酸鎳10重量%、次磷酸鈉10重量%、氫氧化鈉4重量%及琥珀酸鈉20重量%之鎳液52 mL。一面將所獲得之懸浮液於80℃下進行攪拌,一面以5 mL/min連續地滴加上述鎳液,攪拌20分鐘,藉此進行鍍覆反應。確認不再產生氫,使鍍覆反應結束。其後,藉由對懸浮液進行過濾而取出粒子,並進行水洗、乾燥,藉此獲得於基材粒子B之表面配置有第1導電部及鍍鎳層之粒子。(2) Formation of nickel-plated layer A suspension was obtained by adding 10 parts by weight of the particles having the first conductive portion arranged on the surface of the substrate particle B to 100 parts by weight of distilled water and dispersing it. Furthermore, 52 mL of a nickel solution containing 10% by weight of nickel sulfate, 10% by weight of sodium hypophosphite, 4% by weight of sodium hydroxide, and 20% by weight of sodium succinate was prepared. While stirring the obtained suspension at 80° C., the nickel solution was continuously added dropwise at 5 mL/min and stirred for 20 minutes, whereby a plating reaction was performed. It was confirmed that hydrogen was no longer generated, and the plating reaction was completed. Then, the particle|grains in which the 1st conductive part and the nickel-plating layer were arrange|positioned on the surface of the base material particle B were obtained by filtering out the particle|grains by filtration of the suspension, washing with water, and drying.
(3)第2導電部(金層)之形成 藉由將於基材粒子B之表面配置有第1導電部及鍍鎳層之粒子10重量份添加至蒸餾水100重量份中並使其分散而獲得懸浮液。又,準備含有氰化金0.03 mol/L、及作為還原劑之氫醌0.1 mol/L之還原鍍金液。一面將所獲得之懸浮液於70℃下進行攪拌,一面將上述還原鍍金液緩緩地滴加至懸浮液中,進行還原鍍金。其後,藉由對懸浮液進行過濾而取出粒子,並進行水洗、乾燥,藉此獲得導電性粒子。於所獲得之導電性粒子中,於上述第1導電部之外表面上配置有第2導電部(金層,厚度30 nm)。(3) Formation of the second conductive part (gold layer) by adding 10 parts by weight of the particles having the first conductive part and the nickel plating layer arranged on the surface of the substrate particle B to 100 parts by weight of distilled water and dispersing it. Obtain a suspension. Furthermore, a reduction gold plating solution containing 0.03 mol/L of gold cyanide and 0.1 mol/L of hydroquinone as a reducing agent was prepared. While stirring the obtained suspension at 70°C, the above-mentioned reduction gold plating solution was gradually added dropwise to the suspension to perform reduction gold plating. After that, the particles are taken out by filtering the suspension, washed with water, and dried to obtain conductive particles. In the obtained electroconductive particle, the 2nd electroconductive part (gold layer, thickness 30 nm) was arrange|positioned on the outer surface of the said 1st electroconductive part.
(實施例3) 於形成第1導電部時,將基材粒子B變更為基材粒子C,且將第2導電部之厚度變更為35 nm,除此以外,藉由與實施例2相同之方式獲得導電性粒子。於所獲得之導電性粒子中,於第1導電部之外表面上配置有第2導電部(金層,厚度35 nm)。(Example 3) The same procedure as in Example 2 was carried out except that the substrate particles B were changed to the substrate particles C, and the thickness of the second conductive portion was changed to 35 nm when the first conductive portion was formed. way to obtain conductive particles. In the obtained electroconductive particle, the 2nd electroconductive part (gold layer, thickness 35 nm) was arrange|positioned on the outer surface of the 1st electroconductive part.
(實施例4) 於形成第1導電部時,將基材粒子B變更為基材粒子A,於所獲得之懸浮液中添加金屬鎳粒子(平均粒徑150 nm)1重量份,使用含有附著有芯物質之基材粒子A之懸浮液,且將第2導電部之厚度變更為29 nm,除此以外,藉由與實施例2相同之方式獲得導電性粒子。於所獲得之導電性粒子中,於第1導電部之外表面上配置有第2導電部(金層,厚度29 nm)。所獲得之導電性粒子係於第1導電部及第2導電部之外表面具有複數個突起。(Example 4) When forming the first conductive portion, the base material particles B were changed to the base material particles A, and 1 part by weight of metal nickel particles (average particle diameter: 150 nm) was added to the obtained suspension. Conductive particles were obtained in the same manner as in Example 2, except that the suspension of the base material particles A having the core material was changed to 29 nm in thickness of the second conductive portion. In the obtained electroconductive particle, the 2nd electroconductive part (gold layer, thickness 29 nm) was arrange|positioned on the outer surface of the 1st electroconductive part. The obtained electroconductive particle has a some processus|protrusion on the outer surface of a 1st electroconductive part and a 2nd electroconductive part.
(實施例5) 於形成第2導電部時,將基材粒子B變更為基材粒子A,將第1導電部之厚度變更為230 nm,將氰化金0.03 mol/L變更為氰化金0.015 mol/L,且將第2導電部之厚度變更為15 nm,除此以外,藉由與實施例2相同之方式獲得導電性粒子。於所獲得之導電性粒子中,於第1導電部之外表面上配置有第2導電部(金層,厚度15 nm)。(Example 5) When forming the second conductive portion, the substrate particles B were changed to the substrate particles A, the thickness of the first conductive portion was changed to 230 nm, and the 0.03 mol/L gold cyanide was changed to gold cyanide Conductive particles were obtained in the same manner as in Example 2, except that the thickness of the second conductive portion was changed to 15 nm, 0.015 mol/L. In the obtained electroconductive particle, the 2nd electroconductive part (gold layer, thickness 15 nm) was arrange|positioned on the outer surface of the 1st electroconductive part.
(實施例6) 於形成第2導電部時,將氰化金變更為硫酸鈀,且將第2導電部之厚度變更為30 nm,除此以外,藉由與實施例1相同之方式獲得導電性粒子。於所獲得之導電性粒子中,於第1導電部之外表面上配置有第2導電部(鈀層,厚度30 nm)。(Example 6) The conductive parts were obtained in the same manner as in Example 1, except that gold cyanide was changed to palladium sulfate, and the thickness of the second conductive part was changed to 30 nm when forming the second conductive part. Sexual particles. In the obtained electroconductive particle, the 2nd electroconductive part (palladium layer, thickness 30 nm) was arrange|positioned on the outer surface of the 1st electroconductive part.
(實施例7) 於形成第1導電部時,將基材粒子B變更為基材粒子A,且將第2導電部之厚度變更為32 nm,除此以外,藉由與實施例2相同之方式獲得導電性粒子。於所獲得之導電性粒子中,於第1導電部之外表面上配置有第2導電部(金層,厚度32 nm)。(Example 7) The same procedure as in Example 2 was carried out except that the substrate particles B were changed to the substrate particles A and the thickness of the second conductive portion was changed to 32 nm when the first conductive portion was formed. way to obtain conductive particles. In the obtained electroconductive particle, the 2nd electroconductive part (gold layer, thickness 32 nm) was arrange|positioned on the outer surface of the 1st electroconductive part.
(比較例1) 準備不含作為還原劑之氫醌之置換鍍金液。於形成第2導電部時,藉由將還原鍍金液變更為置換鍍金液,而利用置換鍍金代替還原鍍金形成第2導電部,且將第2導電部之厚度變更為32 nm,除此以外,藉由與實施例1相同之方式獲得導電性粒子。於所獲得之導電性粒子中,於第1導電部之外表面上配置有第2導電部(金層,厚度32 nm)。再者,圖5中表示比較例1中所製作之導電性粒子之表面之圖像。(Comparative Example 1) A substitutional gold plating solution containing no hydroquinone as a reducing agent was prepared. When forming the second conductive portion, the second conductive portion was formed by changing the reduction gold plating solution to the replacement gold plating solution, and the replacement gold plating was used instead of the reduction gold plating to form the second conductive portion, and the thickness of the second conductive portion was changed to 32 nm. Conductive particles were obtained in the same manner as in Example 1. In the obtained electroconductive particle, the 2nd electroconductive part (gold layer, thickness 32 nm) was arrange|positioned on the outer surface of the 1st electroconductive part. In addition, the image of the surface of the electroconductive particle produced in the comparative example 1 is shown in FIG.
(評價) (1)針孔之存在狀態 利用電子顯微鏡(日立高新技術公司製造之「FE-SEM SU8010」)對所獲得之導電性粒子之第2導電部之表面進行觀察,評價是否存在最大長度方向之尺寸為50 nm以上之第1針孔。具體而言,針對所獲得之導電性粒子之自外周至朝向內側0.5 μm之部分除外之部分,利用電子顯微鏡觀察任意之5個部位,藉此評價是否存在上述針孔。於存在最大長度方向之尺寸為50 nm以上之第1針孔之情形時,測定每1 μm2 之最大長度方向之尺寸為50 nm以上之第1針孔之個數。又,以相同之方式,評價是否存在最大長度方向之尺寸為50 nm以上且200 nm以下之第2針孔。於存在最大長度方向之尺寸為50 nm以上且200 nm以下之第2針孔之情形時,測定每1 μm2 之最大長度方向之尺寸為50 nm以上且200 nm以下之第2針孔之個數。(Evaluation) (1) Existing state of pinholes The surface of the second conductive portion of the obtained conductive particles was observed with an electron microscope (“FE-SEM SU8010” manufactured by Hitachi High-Technologies Corporation), and the presence or absence of the maximum length was evaluated. The size of the direction is the first pinhole of 50 nm or more. Specifically, the presence or absence of the above-mentioned pinholes was evaluated by observing 5 arbitrary locations with an electron microscope about the portion excluding the portion from the outer periphery to the inner 0.5 μm of the obtained electroconductive particle. When there are first pinholes with a size of 50 nm or more in the maximum longitudinal direction, the number of first pinholes with a size of 50 nm or more in the maximum longitudinal direction per 1 μm 2 is measured. Moreover, in the same manner, it was evaluated whether or not there was a second pinhole whose size in the maximum longitudinal direction was 50 nm or more and 200 nm or less. When there is a second pinhole with a size of 50 nm or more and 200 nm or less in the maximum longitudinal direction, measure the number of second pinholes with a size of 50 nm or more and 200 nm or less per 1 μm 2 in the maximum longitudinal direction. number.
(2)10%K值 藉由上述方法測定所獲得之導電性粒子之10%K值。(2) 10% K value The 10% K value of the obtained electroconductive particles was measured by the above-mentioned method.
(3)25℃下之壓縮回復率 藉由上述方法測定所獲得之導電性粒子之25℃下之壓縮回復率。(3) Compression recovery rate at 25°C The compression recovery rate at 25°C of the obtained electroconductive particles was measured by the above method.
(4)平均粒徑 使用堀場製作所公司製造之「雷射繞射式粒度分佈測定裝置」測定所獲得之導電性粒子之平均粒徑。又,導電性粒子之平均粒徑係藉由將20次之測定結果進行平均而算出。(4) Average particle size The average particle size of the obtained electroconductive particles was measured using a "laser diffraction particle size distribution analyzer" manufactured by Horiba Manufacturing Co., Ltd. In addition, the average particle diameter of electroconductive particle was computed by averaging the measurement result of 20 times.
(5)第1導電部之厚度方向上之磷之含量 使用聚焦離子束,製作所獲得之導電性粒子之薄膜切片。使用場發射型透過電子顯微鏡(日本電子公司製造之「JEM-2010FEF」),藉由能量分散型X射線分析裝置(EDS),測定第1導電部之厚度方向上之磷之含量。根據該結果,求出第1導電部之自基材粒子側至朝向外側厚度1/2為止之區域(內表面側之厚度50%之區域)100重量%中之磷之含量、及第1導電部之自第2導電部側至朝向內側厚度1/2為止之區域(外表面側之厚度50%之區域)100重量%中之磷之含量。(5) Content of phosphorus in the thickness direction of the first conductive portion Using a focused ion beam, thin film slices of the obtained conductive particles were prepared. The content of phosphorus in the thickness direction of the first conductive portion was measured by an energy dispersive X-ray analyzer (EDS) using a field emission transmission electron microscope (“JEM-2010FEF” manufactured by JEOL Ltd.). From this result, the content of phosphorus in 100% by weight of the region from the base material particle side to 1/2 of the thickness toward the outer side (the region with a thickness of 50% on the inner surface side) of the first conductive portion and the first conductive portion were obtained. The content of phosphorus in 100 wt % of the region from the second conductive portion side to 1/2 of the thickness toward the inner side (region of thickness 50% on the outer surface side).
(6)導電部之破裂 使用所獲得之導電性粒子,評價導電部之破裂。以如下方式評價導電部之破裂。根據以下之基準判定導電部之破裂。(6) Breakage of the conductive portion Using the obtained conductive particles, the breakage of the conductive portion was evaluated. The rupture of the conductive portion was evaluated in the following manner. Breakage of the conductive portion was determined according to the following criteria.
導電部之破裂之評價方法: 使用電子顯微鏡,以每1張拍到約100個導電性粒子之倍率拍攝1000個導電性粒子之照片。觀察所獲得之1000個導電性粒子之照片,測定存在具有導電性粒子之直徑之一半以上之長度之破裂的導電性粒子之個數。Evaluation method of the crack of an electroconductive part: Using an electron microscope, the photograph of 1000 electroconductive particles was photographed at a magnification of about 100 electroconductive particles per one photograph. The photograph of the obtained 1000 electroconductive particles was observed, and the number of objects of the electroconductive particle which has the crack which has the length of more than half the diameter of the electroconductive particle was measured.
[導電部之破裂之判定基準] ○:存在破裂之導電性粒子之個數未達100個 ×:存在破裂之導電性粒子之個數為100個以上[Criteria for Determination of Cracked Conductive Part] ○: The number of cracked conductive particles is less than 100 ×: The number of cracked conductive particles is 100 or more
(7)初期之連接電阻 連接構造體X之製作: 將所獲得之導電性粒子以含量成為10重量%之方式添加至三井化學公司製造之「Stractbond XN-5A」中並使其分散,而製作各向異性導電膏。(7) Production of initial connection resistance connection structure X: The obtained conductive particles were added to "Stractbond XN-5A" manufactured by Mitsui Chemicals Co., Ltd. in a content of 10% by weight and dispersed to produce Anisotropic conductive paste.
準備於上表面具有L/S為20 μm/20 μm之ITO電極圖案之透明玻璃基板。又,準備於下表面具有L/S為20 μm/20 μm之金電極圖案之半導體晶片。Prepare a transparent glass substrate with an ITO electrode pattern with L/S of 20 μm/20 μm on the upper surface. Furthermore, a semiconductor wafer having a gold electrode pattern with L/S of 20 μm/20 μm on the lower surface was prepared.
將剛製作後之各向異性導電膏以厚度成為30 μm之方式塗敷於上述透明玻璃基板上,形成各向異性導電膏層。其次,將上述半導體晶片以電極彼此對向之方式積層於各向異性導電膏層上。其後,一面以各向異性導電膏層之溫度成為120℃之方式調整頭之溫度,一面於半導體晶片之上表面載置加壓加熱頭,一面賦予由壓接面積算出之1 MPa之低壓力,一面使各向異性導電膏層於100℃下硬化,而獲得連接構造體X。The anisotropic conductive paste immediately after production was applied on the above-mentioned transparent glass substrate so as to have a thickness of 30 μm to form an anisotropic conductive paste layer. Next, the above-mentioned semiconductor wafer is laminated on the anisotropic conductive paste layer so that the electrodes face each other. Then, while adjusting the temperature of the head so that the temperature of the anisotropic conductive paste layer becomes 120°C, a pressure heating head is placed on the upper surface of the semiconductor wafer, and a low pressure of 1 MPa calculated from the crimping area is applied. , while the anisotropic conductive paste layer was cured at 100° C. to obtain a connection structure X.
連接構造體Y之製作: 將使各向異性導電材料層硬化時之溫度變更為150℃,除此以外,藉由與連接構造體X相同之方式製作連接構造體Y。Production of the connection structure Y: The connection structure Y was produced in the same manner as the connection structure X, except that the temperature at the time of curing the anisotropic conductive material layer was changed to 150°C.
連接構造體Z之製作: 將使各向異性導電材料層硬化時之溫度變更為200℃,除此以外,藉由與連接構造體X相同之方式製作連接構造體Z。Preparation of the connection structure Z: The connection structure Z was produced in the same manner as the connection structure X, except that the temperature at the time of curing the anisotropic conductive material layer was changed to 200°C.
藉由四端子法分別測定所獲得之連接構造體X、Y、Z之上下電極間之連接電阻A。再者,根據電壓=電流×電阻之關係,藉由測定流過一定之電流時之電壓,可求出連接電阻A。根據以下之基準,由連接電阻A判定初期之連接電阻。The connection resistance A between the upper and lower electrodes of the obtained connection structures X, Y, and Z was measured by the four-terminal method, respectively. Furthermore, according to the relationship of voltage=current×resistance, the connection resistance A can be obtained by measuring the voltage when a constant current flows. The initial connection resistance was determined from the connection resistance A according to the following criteria.
[初期之連接電阻之判定基準] ○○○:連接電阻A為2.0 Ω以下 ○○:連接電阻A超過2.0 Ω且為3.0 Ω以下 ○:連接電阻A超過3.0 Ω且為5.0 Ω以下 Δ:連接電阻A超過5.0 Ω且為10 Ω以下 ×:連接電阻A超過10 Ω[Judgment criteria for initial connection resistance] ○○○: Connection resistance A is 2.0 Ω or less ○○: Connection resistance A exceeds 2.0 Ω and 3.0 Ω or less ○: Connection resistance A exceeds 3.0 Ω and is 5.0 Ω or less Δ: Connection Resistance A exceeds 5.0 Ω and is 10 Ω or less ×: Connection resistance A exceeds 10 Ω
(8)高溫高濕放置後之連接電阻(導通可靠性) 將上述(7)初期之連接電阻之評價後之連接構造體X、Y、Z於85℃及濕度85%之條件下放置500小時。於放置500小時後之連接構造體X、Y、Z中,藉由四端子法分別測定上下電極間之連接電阻B。根據以下之基準,由連接電阻A、B判定高溫高濕放置後之連接電阻(導通可靠性)。(8) Connection resistance after standing at high temperature and high humidity (conduction reliability) The connection structures X, Y, and Z after the above-mentioned (7) initial evaluation of connection resistance were left at 85°C and 85% humidity for 500 hours . In the connection structures X, Y, and Z after being left to stand for 500 hours, the connection resistance B between the upper and lower electrodes was measured by the four-terminal method, respectively. The connection resistance (conduction reliability) after being left to stand at high temperature and high humidity was determined from the connection resistances A and B according to the following criteria.
[高溫高濕放置後之連接電阻(導通可靠性)之判定基準] ○○○:連接電阻B未達連接電阻A之1.25倍 ○○:連接電阻B為連接電阻A之1.25倍以上且未達1.5倍 ○:連接電阻B為連接電阻A之1.5倍以上且未達2倍 Δ:連接電阻B為連接電阻A之2倍以上且未達5倍 ×:連接電阻B為連接電阻A之5倍以上[Judgment criteria for connection resistance (conduction reliability) after being left at high temperature and high humidity] ○○○: Connection resistance B is less than 1.25 times that of connection resistance A ○○: Connection resistance B is more than 1.25 times that of connection resistance A and does not reach 1.5 times ○: Connection resistance B is 1.5 times or more and less than 2 times of connection resistance A: Connection resistance B is more than 2 times of connection resistance A and less than 5 times ×: Connection resistance B is 5 times of connection resistance A above
將結果示於下述表1、2。The results are shown in Tables 1 and 2 below.
[表1]
[表2]
1‧‧‧導電性粒子2‧‧‧基材粒子3‧‧‧第1導電部4‧‧‧第2導電部21‧‧‧導電性粒子21a‧‧‧突起22‧‧‧第1導電部22a‧‧‧突起23‧‧‧第2導電部23a‧‧‧突起24‧‧‧芯物質25‧‧‧絕緣性物質51‧‧‧連接構造體52‧‧‧第1連接對象構件52a‧‧‧第1電極53‧‧‧第2連接對象構件53a‧‧‧第2電極54‧‧‧連接部1‧‧‧
圖1係表示本發明之第1實施形態之導電性粒子之剖視圖。 圖2係表示本發明之第2實施形態之導電性粒子之剖視圖。 圖3係模式性地表示使用本發明之第1實施形態之導電性粒子之連接構造體之剖視圖。 圖4係表示實施例1中所製作之導電性粒子之表面之圖像之圖。 圖5係表示比較例1中所製作之導電性粒子之表面之圖像之圖。FIG. 1 is a cross-sectional view showing an electroconductive particle according to a first embodiment of the present invention. It is sectional drawing which shows the electroconductive particle which concerns on 2nd Embodiment of this invention. It is sectional drawing which shows typically the connection structure which used the electroconductive particle of 1st Embodiment of this invention. FIG. 4 is a view showing an image of the surface of the electroconductive particle produced in Example 1. FIG. 5 : is a figure which shows the image of the surface of the electroconductive particle produced in the comparative example 1. FIG.
1‧‧‧導電性粒子 1‧‧‧Conductive particles
2‧‧‧基材粒子 2‧‧‧Substrate particles
3‧‧‧第1導電部 3‧‧‧The first conductive part
4‧‧‧第2導電部 4‧‧‧Second conductive part
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