TWI628443B - Measuring structure - Google Patents

Abstract

A measuring structure is formed on the dielectric layer by a oscillating measuring group having two rings of the ring, so that in the operation of measuring the dielectric constant in a single measurement, the energy measures two frequency peaks.

Description

Measuring structure

The present invention relates to a measuring structure, and more particularly to a measuring structure for measuring a dielectric constant.

5th generation mobile networks (5th generation mobile systems or 5th generation wireless systems, 5G for short), the transmission frequency is between 23 and 40 GHz, so the circuit structure of the semiconductor package In the layout, the accuracy of the dielectric constant of the dielectric material used is extremely high, otherwise the fabricated semiconductor package cannot meet the requirement of a transmission frequency between 23 and 40 GHz, that is, the semiconductor package cannot reach 5G. The demand for electronic products.

In addition, when a dielectric material is used in a packaging factory, the characteristics of the dielectric material, such as a dielectric constant, must be considered, and the characteristics of the dielectric material are defined by the material supplier, and the definition is only the dielectric. The value of the material at a particular temperature (e.g., the dielectric constant of the dielectric material in a liquid state) does not exhibit a value for the dielectric material at other temperatures (e.g., the dielectric constant of the dielectric material in the solid state).

However, in the process of fabricating a semiconductor package, the dielectric material changes from a liquid state (or a molten state) to a solid state, and the dielectric constant value thereof is large. The amplitude varies, so if the liquid dielectric constant defined by the material supplier is referenced, the transmission frequency of the circuit structure of the fabricated semiconductor package is easily disturbed and the signal cannot be effectively transmitted, thereby causing the 5G electronic product to fail to meet the high frequency. demand.

Therefore, the packaging factory usually measures the dielectric constant of the dielectric material in the solid state, and judges whether the dielectric material meets the requirements according to the dielectric constant of the self-measurement.

As shown in FIGS. 1A to 1B, the packaging factory will determine whether or not the required dielectric material is to be simulated to simulate the desired wiring structure 1a (such as the product dielectric layer 10a and the wiring layer 11a shown in FIG. 1C). An imitation structure 1 (excluding the circuit layer 11a shown in FIG. 1C) includes at least one measurement dielectric layer 10 and an oscillation measuring portion 11 disposed on the measurement dielectric layer 10, the amount The material property of the dielectric layer 10 is the same as that of the dielectric layer 10a of the product, and the oscillation measuring portion 11 has a circular loop line 111 and two transmission lines 113, 114. Specifically, the circular loop line 111 is spaced between the two transmission lines 113, 114 so that the circular loop line 111 and the two transmission lines 113, 114 have a gap e, and the circular loop line 111 and the two transmission lines 113, 114 can be generated. Electrical coupling, wherein the circular ring line 111 corresponds to the circumferential surface range L of the gap e, and the coupling amount of the electrical coupling can be defined, and the predetermined transmission frequency (such as 28 GHz) of the oscillation measuring unit 11 is The circumference of the circular loop line 111 (or the outer diameter R of the circular loop line 111) may be defined, that is, the wavelength of the predetermined transmission frequency may be the circumference of the circular loop line 111 (eg, 1/28 nm). .

In addition, the dummy structure is measured before the line structure 1a is fabricated. The dielectric constant of the dielectric layer 10 in the solid state is measured to determine whether the dielectric layer 10a of the product can be used. Specifically, when measuring the dielectric constant of the dielectric layer 10 in the solid state, the ambient temperature is first adjusted to maintain the solid state of the dielectric layer 10, and then a measuring instrument (not shown) is provided. The current is sequentially coupled through one of the transmission line 113, the circular loop line 111 and the other transmission line 114 to obtain a peak value of the preset transmission frequency (such as 28 GHz), and then the computer calculates the quantity according to the conventional physical formula by the peak value. The value of the dielectric constant of the dielectric layer 10 (i.e., the dielectric layer 10a of the product) is measured in the solid state.

Therefore, the packaging factory can input the value of the dielectric constant of the dielectric layer 10 in the solid state into the analog software to perform the semiconductor package 1' (as shown in FIG. 1D, which includes the semiconductor wafer 12 and the line structure 1a). And the simulation operation of the package material 13), thereby judging whether the product dielectric layer 10a meets the requirements of the line structure 1a, that is, when the line structure 1a is met, the line structure 1a is started.

However, in the conventional oscillating portion 11 of the pseudo-structure 1, the end portions of the transmission lines 113, 114 are linear ends, and thus the circular loop 111 is electrically coupled only at the extremely small circumferential surface range L, resulting in an amount of progress. During the measurement operation, the coupling amount of the current is extremely small, so the measurement signal is easily interfered by noise. Especially when the dynamic range of the equivalent measuring instrument is insufficient, the measurement signals obtained by the measurement signal are mostly noise, so it will affect the acquisition. The accuracy of the peak or band.

Furthermore, the oscillating portion 11 of the conventional pseudo structure 1 can only be used to measure the dielectric constant of a single frequency band (the predetermined transmission frequency), and if multiple frequency bands are to be measured (eg, the preset transmission frequency is 38 GHz and For the dielectric constant of 23.75 GHz), it is necessary to design a plurality of sets of the dummy structure 1 (different measurement of the oscillating portion 11) The circumference of the circular loop 111) is time consuming and costly.

Therefore, how to overcome the various problems in the above-mentioned prior art has become a problem that is currently being solved.

In view of the above-mentioned deficiencies of the prior art, the present invention provides a measuring structure comprising: a dielectric layer; a first wire disposed on the dielectric layer and having a first end; and a second wire disposed on The dielectric layer has a second end portion corresponding to the first end portion; the first ring body is disposed on the dielectric layer and spaced between the first end portion and the second end portion, And electrically coupling the first end portion and the second end portion; and the second ring body is disposed on the dielectric layer and spaced around the first ring body at intervals, and circumferentially surrounding the first end portion and The second end is electrically coupled to the first end and the second end.

In the aforementioned measuring structure, the shape of the first end portion corresponds to the side profile of the first ring body or the second ring body.

In the aforementioned measuring structure, the shape of the second end portion corresponds to the side profile of the first ring body or the second ring body.

In the above measuring structure, the first end portion and the second end portion form a frame, and the first ring body is located in the frame body. For example, the shape of the frame corresponds to the side profile of the first ring.

In the foregoing measuring structure, the side range of the first ring body corresponding to the gap defines the coupling amount of the electrical coupling generated by the first ring body.

In the foregoing measuring structure, the side range corresponding to the gap of the second ring body defines the coupling amount of the electrical coupling generated by the second ring body.

In the foregoing measuring structure, the measuring structure is used for measuring the dielectric layer The dielectric constant, and the dielectric constant corresponds to the transmission frequency of the signal. For example, the length of the side of the first ring or the second ring corresponds to the wavelength of the transmission frequency.

It can be seen from the above that the measuring structure of the present invention mainly adopts the design of the two ring bodies (the first ring body and the second ring body) to measure the two frequencies in the operation of measuring the dielectric constant in a single measurement. The peak value, so compared with the conventional imitation structure, if the dielectric constant of the plurality of frequency bands is measured by using the measuring structure of the present invention, the number of the measuring structures can be reduced, thereby reducing the material cost and greatly shortening The time of the measurement operation.

Moreover, the shape of the end of the wire corresponds to the side profile of the ring body to increase the side range of the ring body for generating electrical coupling, so that the measuring operation can be increased compared to the prior art. The amount of current coupling prevents noise interference, and even if the dynamic range of the measuring instrument is insufficient, the resulting noise can be greatly reduced, thereby improving the accuracy of the frequency peak or frequency band captured.

1‧‧‧Fake structure

1'‧‧‧Semiconductor package

1a‧‧‧Line structure

10‧‧‧Measurement dielectric layer

10a‧‧‧Product dielectric layer

11‧‧‧Vibration Measurement Department

11a, 31‧‧‧ circuit layer

111‧‧‧Circular loop

113,114‧‧‧ transmission line

12‧‧‧Semiconductor wafer

13‧‧‧Package

2‧‧‧Measurement structure

2a‧‧‧Shock Measurement Group

2b‧‧‧Carrier

20‧‧‧Dielectric layer

21‧‧‧First ring

22‧‧‧Second ring

22a, 22b‧‧‧ Ring

23‧‧‧First wire

230‧‧‧ first end

24‧‧‧second wire

240‧‧‧second end

25‧‧‧ Grounding layer

3‧‧‧The actual package substrate

30‧‧‧ Actual dielectric layer

A‧‧‧ frame

a, d1, d2, t1, t2, e‧‧ ‧ gap

F1, f2‧‧‧ frequency point

H‧‧‧thickness

L‧‧‧Week range

L1, L2‧‧‧ side range

R‧‧‧ outside diameter

R1‧‧‧ first outer diameter

R2‧‧‧ second outer diameter

W‧‧‧Line width

1A is a schematic plan view of a conventional imitation structure; FIG. 1B is a schematic cross-sectional view of a conventional imitation structure; FIG. 1C is a schematic cross-sectional view of a conventional circuit structure; FIG. 1D is a schematic cross-sectional view of a conventional semiconductor package; 2A is a schematic plan view of the measuring structure of the present invention; FIG. 2B is a schematic cross-sectional view of the BB section line of FIG. 2A; and FIG. 3 is a schematic cross-sectional view of the actual package substrate corresponding to FIG. 2A; Figure 4 is a graph of the frequency points measured by the measurement structure of Figure 2A in the measurement operation.

The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.

It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered. In the meantime, the terms "upper", "first", "second" and "one" are used in the description, and are not intended to limit the scope of the invention. Changes or adjustments in the relative relationship are considered to be within the scope of the present invention.

Please refer to FIGS. 2A and 2B , which are schematic diagrams of the measuring structure 2 of the present invention. The measuring structure 2 includes: a carrier 2b including at least one dielectric layer 20 and other optional components, and The oscillating measuring group 2a on the same dielectric layer 20, wherein the oscillating measuring group 2a comprises a first wire 23, a second wire 24, a first ring body 21 and a second ring body 22 .

In this embodiment, the measuring structure 2 is a knot of the imitation target product. a simple substrate structure (which can be provided with a dielectric layer 20 without a wiring layer), wherein the target product is an actual package substrate 3 as shown in FIG. 3 (which is provided with an actual dielectric layer 30 and a plurality of lines) Layer 31), and the measuring structure 2 is used to measure a parameter (such as dielectric constant), so that the computer calculates the desired target value by using the parameter.

In other words, when the dielectric constant of the actual dielectric layer 30 of the actual package substrate 3 is to be known, the actual dielectric layer 30 of the actual package substrate 3 is not directly measured to avoid damaging the circuit layer 31. The measurement structure 2 is modeled on the actual package substrate 3 but without the wiring layer 31. Therefore, the actual dielectric layer can be known by measuring the dielectric constant of the dielectric layer 20 of the measurement structure 2. 30 dielectric constant.

Furthermore, the actual package substrate 3 is, for example, a substrate structure having a core layer and a circuit structure, or a core layer, which is formed on the dielectric material to form a wiring layer 31, such as a fan. Out) type redistribution layer (RDL).

The material composition and thickness h of the dielectric layer 20 are equal to the material composition and thickness h of the actual dielectric layer 30. In this embodiment, the dielectric layer 20 is used as a measurement target, and the transmission frequency measured by the measurement structure 2 is used as the parameter, and then the computer calculates the target by using the parameter to obtain a target. The value (i.e., the dielectric constant of the dielectric layer 20 or the dielectric constant of the actual dielectric layer 30).

The first wire 23 is disposed on the dielectric layer 20 and has a first end portion 230.

In this embodiment, the first wire 23 is made by a patterning process. A metal wire (such as a copper wire) is used as an input port (ie, an input end of the test signal), and a line width W of the first wire 23 is equal to a line width W of the circuit layer 31.

Moreover, the shape of the first end portion 230 corresponds to the outer side contour of the first ring body 21, such as a curved circle or a half circle.

The second wire 24 is disposed on the dielectric layer 20 and has a second end 240 corresponding to the first end portion 230.

In this embodiment, the second wire 24 is a metal wire (such as a copper wire) made by a patterning process, and is used as an output port (ie, an output end of the test signal), and the line width W of the second wire 24 is W. It is equal to the line width W of the circuit layer 31.

Moreover, the shape of the second end portion 240 corresponds to the outer side contour of the first ring body 21, such as an arc circle or a half circle.

The first ring body 21 is disposed on the dielectric layer 20 and spaced apart between the first end portion 230 and the second end portion 240 to make the first ring body 21 and the first end portion A gap d1, d2 is formed between the portions 230 and the second end portion 240, and the first ring body 21 is electrically coupled to the first end portion 230 and the second end portion 240, respectively.

In the present embodiment, the first ring body 21 is a metal wire (such as a copper wire) made by a patterning process, which is a circular ring, and the line width W of the first ring body 21 is equal to the circuit layer 31. The line width is W.

Furthermore, the first end portion 230 and the second end portion 240 are disposed opposite each other (eg, separated face to face) to form a frame body A having a gap a, and the first ring body 21 is located in the frame body A. It should be understood that the first ring body 21 can be The shape of the first end portion 230 and the second end portion 240 (ie, the frame body A) may be changed according to the outer side contour of the first ring body 21 (ie, the frame body) The shape corresponds to the side profile of the first ring body 21).

Further, the first ring body 21 corresponds to the side surface range L1 of the gaps d1 and d2, and defines the amount of coupling of the electrical coupling generated by the first ring body 21.

The second ring body 22 is disposed on the dielectric layer 20 and is concentrically surrounded by the first ring body 21 at intervals, and surrounds the first end portion 230 and the second end portion 240 at intervals. A gap t1, t2 is formed between the second ring body 22 and the first end portion 230 and the second end portion 240, respectively, and the second ring body 22 is electrically coupled to the first end portion 230, respectively. The second end 240.

In the present embodiment, the second ring body 22 is a metal wire (such as a copper wire) made by a patterning process, and the line width W of the second ring body 22 is equal to the line width W of the circuit layer 31.

Furthermore, the second ring body 22 is provided with the first wire 23 and the second wire 24 between the first ring body 21, and presents a two-stage (discontinuous) ring body, such as two The arcuate ring portions 22a, 22b are separated.

Moreover, the ring portions 22a, 22b are disposed opposite each other (eg, separated face to face) such that the frame body A and the first ring body 21 are located in the second ring body 22. It should be understood that the second ring body 22 can be a ring body of other geometric shapes, and the shape of the second ring body 22 can be changed according to the outer side contour of the first ring body 21 or the frame body A.

In addition, the second ring body 22 corresponds to the side surface range L2 of the gap t1, t2 The coupling amount of the electrical coupling generated by the second ring body 22 is defined.

On the other hand, in the embodiment in which the circular ring of FIG. 2A is used for the 5G frequency, the circumference of the first ring body 21 (defined by the first outer diameter R1 of the first ring body 21) corresponds to the first The length of the wavelength of a transmission frequency (predetermined transmission frequency), and the circumference of the second ring body 22 (defined by the second outer diameter R2 of the second ring body 22) corresponds to the second transmission frequency (preset transmission) The length of the wavelength of the frequency). For example, the first transmission frequency is, for example, 39 GHz (38 × 10 ⁹ Hz), and the length of the wavelength is 1/39 nm, so that the circumference of the first ring 21 is 4.608 mm (the first An outer diameter R1 is 0.733 mm); and the second transmission frequency is, for example, 28 GHz, the length of the wavelength is 1/28 nm, and the circumference of the second ring 22 is 6.428 mm (second external The diameter R2 is 1.023 mm). It should be understood that the smaller the transmission frequency of the ring body, the larger its wavelength, the larger its circumference.

The measuring structure 2 can form a ground layer 25 on the other dielectric layer 20 as needed.

When measuring the dielectric constant of the dielectric layer 20 in the finished state (solid state), first pass a current of a measuring instrument (not shown) through the first wire 23 to make the first wire 23 The first end portion 230 is electrically coupled to the first ring body 21 and the second ring body 22 to electrically conduct the current to the first ring body 21 and the second ring body 22, and then the first ring body 21 and the second ring body 22 are electrically coupled to the second end portion 240 of the second wire 24, and the current is conducted to the second wire 24 to be returned to the measuring instrument to make the measuring instrument. Two sets of frequency peaks are obtained successively, as shown in Fig. 4, the frequency point f1 of the first transmission frequency (38 GHz) (the value is -6.02) and the frequency point f2 of the second transmission frequency (23.75 GHz) (the value is -8.55).

Thereafter, the frequency peaks obtained in FIG. 4 (ie, frequency points f1, f2) are input into a computer (not shown) for calculation to obtain a dielectric constant corresponding to each frequency peak.

In this embodiment, the model of the real package substrate 3 is built in the computer to measure the parameters (such as the frequency point f1, f2, that is, the frequency peak) and the measurement of the relevant size (such as the actual dielectric The thickness h of the layer 30, the line width W of the wiring layer 31, the circumference of the first and second ring bodies 21, 22, and the like.

Furthermore, the computer is based on the physical formulas (1) and (2) shown below:

To calculate the dielectric constant of the two frequency bands (the first transmission frequency and the second transmission frequency). Specifically, the measured values of the frequency points f1, f2 (frequency peaks) are taken as the f-value of the formula (1), and λ is the ring bodies (the first ring body 21 and the second ring body 22) The actual side length (such as the circumference) is calculated by formula (1) as a constant ε _e , and then the thickness h of the dielectric layer 20 (or the actual dielectric layer 30) measured by the actual amount is taken as a formula (2). The value of h, and the line width W of the oscillation measurement group 2a (ie, the line width W of the circuit layer 31) is taken as the W value of the formula (2), and the constant ε _e derived from the formula (1) is taken The formula (2) is entered to obtain the value ε _r of the dielectric constant of the dielectric layer 20 (or the actual dielectric layer 30) in the solid state or at a specific transmission frequency (the first transmission frequency or the second transmission frequency).

Finally, the value of the dielectric constant of the dielectric layer 20 in the solid state is input into an analog software (such as HFSS, ADS, etc.) to perform a simulation operation of arranging the semiconductor package model of the actual package substrate 3, thereby judging the Whether the dielectric layer 30 meets the requirements of the actual package substrate 3, that is, when the requirements are met, the fabrication of the actual package substrate 3 is started. In other words, before the actual package substrate 3 is fabricated, the dielectric constant of the dielectric layer 20 in the solid state is measured to determine whether the actual dielectric layer 30 can be used.

Therefore, the measuring structure 2 of the present invention is designed according to the structure of the actual package substrate 3, and the material composition and thickness h of the dielectric layer 20 are equal to the material composition and thickness h of the actual dielectric layer 30, and the oscillation measurement is performed. The line width W of the group 2a is equal to the line width W of the circuit layer 31 to calculate a line width W conforming to a specific impedance (e.g., 50 ohm (Ohm) impedance), so that the signal transmission of the measurement operation is smoother.

Furthermore, the shape of the first end portion 230 of the first wire 23 (such as a semicircular shape) and the shape of the second end portion 240 of the second wire 24 (such as a semicircular shape) correspond to the first ring body 21 The outer side profile or the inner side profile of the second ring body 22 increases the side range L1, L2 of the first ring body 21 or the second ring body 22 for generating electrical coupling, so that compared to the prior art In the measurement operation, the coupling amount of the current can be increased to avoid noise interference, and even if the dynamic range of the measuring instrument is insufficient, the obtained noise can be greatly reduced, thereby improving the frequency peak value captured. (ie frequency point f1, f2) or the accuracy of the frequency band.

Moreover, the oscillation measurement group 2a of the measurement structure 2 includes the first ring of the inner ring The body 21 and the outer ring second ring body 22, and the first outer diameter R1 (perimeter or side length) of the first ring body 21 corresponds to the length of the wavelength of the first transmission frequency, and the second ring body 22 The second outer diameter R2 (circumference or side length) corresponds to the length of the wavelength of the second transmission frequency, so that for a single measurement operation, the energy measures two frequency peaks (ie, frequency points f1, f2), so When measuring the oscillating portion of the conventional imitation structure, if the dielectric constant of the plurality of frequency bands is measured by using the measuring structure 2 of the present invention, the number of the measuring structures 2 can be reduced, thereby reducing the material cost and enabling Significantly reduce the time required for measurement operations.

The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.

Claims (10)

A measuring structure includes: a dielectric layer; a first wire disposed on the dielectric layer and having a first end; and a second wire disposed on the dielectric layer and having a first end a second end portion of the first ring body is disposed on the dielectric layer and spaced apart between the first end portion and the second end portion, and electrically coupled to the first end portion and the first end portion a second end portion; and a second ring body disposed on the dielectric layer and spaced around the first ring body at intervals, and surrounding the first end portion and the second end portion at intervals, and the first end portion The portion and the second end are electrically coupled. The measuring structure of claim 1, wherein the shape of the first end portion corresponds to a side profile of the first ring body or the second ring body. The measuring structure of claim 1, wherein the shape of the second end portion corresponds to a side profile of the first ring body or the second ring body. The measuring structure according to claim 1, wherein the first end portion and the second end portion form a frame such that the first ring body is located in the frame body. The measuring structure of claim 4, wherein the shape of the frame corresponds to a side profile of the first ring body. The measuring structure according to claim 1, wherein the first ring body corresponds to a side range of the gap to define a coupling amount of the electrical coupling generated by the first ring body. The measuring structure according to claim 1, wherein the side range of the second ring corresponding to the gap defines the coupling amount of the electrical coupling generated by the second ring. The measuring structure according to claim 1, wherein the measuring structure is configured to measure a dielectric constant of the dielectric layer, and the dielectric constant corresponds to a transmission frequency of the signal. The measuring structure according to claim 8, wherein the side length of the first ring body is the length of the wavelength corresponding to the transmission frequency. The measuring structure according to claim 8, wherein the side length of the second ring body is the length of the wavelength corresponding to the transmission frequency.