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TWI600701B - A semiconductor sealing epoxy resin composition and a method of manufacturing the semiconductor device - Google Patents

A semiconductor sealing epoxy resin composition and a method of manufacturing the semiconductor device Download PDF

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Publication number
TWI600701B
TWI600701B TW102125201A TW102125201A TWI600701B TW I600701 B TWI600701 B TW I600701B TW 102125201 A TW102125201 A TW 102125201A TW 102125201 A TW102125201 A TW 102125201A TW I600701 B TWI600701 B TW I600701B
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composition
epoxy resin
resin composition
viscosity
resin
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TW102125201A
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English (en)
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TW201410779A (zh
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Yukari Kouno
Katsushi Kan
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Nagase Chemtex Corp
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/24—Di-epoxy compounds carbocyclic
    • C08G59/245—Di-epoxy compounds carbocyclic aromatic
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • C08G59/4238—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof heterocyclic
    • C—CHEMISTRY; METALLURGY
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/44—Amides
    • C08G59/46—Amides together with other curing agents
    • C08G59/48—Amides together with other curing agents with polycarboxylic acids, or with anhydrides, halides or low-molecular-weight esters thereof
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • C08G59/686—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
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    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G2190/00—Compositions for sealing or packing joints
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    • C08L2203/00—Applications
    • C08L2203/16—Applications used for films
    • C08L2203/162—Applications used for films sealable films
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    • C08L2203/20—Applications use in electrical or conductive gadgets
    • C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
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Description

半導體密封用環氧樹脂組成物及半導體裝置之製造方法
本發明係關於一種半導體密封用環氧樹脂組成物及半導體裝置之製造方法，更詳細而言係關於一種可尤其適宜地應用於Cu柱晶片之樹脂預置型倒裝晶片安裝之密封用環氧樹脂組成物及使用Cu柱晶片之半導體裝置之製造方法。
作為半導體晶片於電路基板上之安裝方法，對應於封裝之進一步之輕薄短小化之要求，倒裝晶片安裝正在增加。關於倒裝晶片之安裝，先前進行有所謂「樹脂預置型安裝」，即先於基板上供給密封樹脂後，將晶片壓接於基板上之電路，進行電性連接，且進行密封樹脂之硬化的方法等。
關於該倒裝晶片安裝，正研究自先前廣泛使用之具有Au柱(Au stud)之晶片轉向採用使用電氣特性優異之Cu柱的晶片。使用Cu柱之晶片之基板係藉由設置於柱之前端部之焊料之熔接而進行與基板上之電路之連接，此時為了使焊料不會自基板上之特定區域滲出並流動，而於不可滲出之區域預先塗佈阻焊劑圖案，由於在與柱之接合部未塗佈阻焊劑，而設法使焊料僅融合於特定部位。因此，塗佈有阻焊劑之區域與未塗佈之區域之交界會以階差之形式存在於基板上。判明該階差之存在對於樹脂預置型倒裝晶片安裝而言，於壓抵晶片與基板而使密封樹脂於其間隙流動並被按壓展開時，夾帶之空氣被截留而成為產生空隙之原因。
進而認識到亦存在如下問題：必須加熱至焊料之回焊溫度，該加熱之溫度高於先前之利用Au柱之壓接步驟，因此密封樹脂之黏度降低而流動性提高，有於硬化之前產生位置偏移之虞等。
已知有各種半導體密封用環氧樹脂組成物，例如專利文獻1中揭示有以較少量之0.1~5phr調配丙烯酸系聚合物微粒子而具有潛伏性增黏效果的密封樹脂。然而，該密封樹脂係適合於打線接合型IC晶片用途之密封劑，並非解決上述課題者。
[專利文獻1]日本特開2012-77129號公報
本發明之目的在於提供一種可尤其適宜地應用於Cu柱晶片之樹脂預置型倒裝晶片安裝，且可抑制因產生空隙而引起之缺陷的密封用環氧樹脂組成物及使用Cu柱晶片之半導體裝置之製造方法。
本發明係一種半導體密封用環氧樹脂組成物，其用於倒裝晶片安裝，且含有環氧樹脂(A)、硬化劑(B)、硬化促進劑(C)、及相對於上述(A)100重量份為3~64重量份之體積平均一次粒徑為0.2~10μm之加熱型增黏樹脂粒子(D)。
又，本發明亦係一種半導體裝置之製造方法，該半導體裝置係進行倒裝晶片安裝而成者，其特徵在於具有以下步驟：步驟(1)，係對具有電極之基板之電極面供給液狀之半導體密封用環氧樹脂組成物；步驟(2)，係藉由加熱上述基板，而使上述樹脂組成物高黏度化；及步驟(3)，係將形 成有凸塊之半導體晶片於加熱下壓抵加壓於上述已高黏度化之樹脂組成物，同時將上述樹脂組成物按壓展開而填充於上述基板與上述半導體晶片之間隙。
本發明之密封用環氧樹脂組成物藉由上述構成，藉由保持在常溫可供給之液狀，並進行加熱，而利用加熱型增黏樹脂粒子使環氧樹脂組成物增黏。例如於加熱型增黏樹脂粒子為丙烯酸系樹脂粒子之情形時，自常溫開始隨著溫度上升，環氧樹脂組成物之黏度逐漸降低，另一方面，丙烯酸系樹脂粒子隨著升溫於環氧樹脂中開始膨潤，成為黏度上升之要因。其結果為，到達某一定溫度時，環氧樹脂組成物之黏度開始上升，環氧樹脂組成物高黏度化。其後，於進一步升溫中，環氧樹脂組成物亦具有可於維持高黏度之狀態下硬化之直至硬化為止之黏度分佈。因此，於樹脂預置型安裝中之利用晶片之壓抵加壓將樹脂按壓展開時，可將樹脂黏度維持於一定較高程度之狀態。其結果為，本發明者意外地發現所截留之空隙得以排除之效果。
本發明之組成物可解決於Cu柱晶片之樹脂預置型安裝中顯在化之課題，尤其是抑制因產生空隙而引起之缺陷，並且可實現作業性良好之樹脂預置型倒裝晶片安裝，可尤其適宜地用於使用Cu柱晶片之半導體裝置之製造方法。
於本發明中，作為環氧樹脂(A)，可應用一般使用之環氧樹脂作為密封用樹脂，例如可列舉雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚AD型環氧樹脂、萘型環氧樹脂、聯苯型環氧樹脂、環氧丙胺型環氧樹脂、脂環式環氧樹脂、二環戊二烯型環氧樹脂、聚醚型環氧樹脂、聚矽氧改質環氧樹脂等。該等可單獨使用，亦可組合使用2種以上。例如於常溫為固體之環氧樹脂可與於常溫為液狀之環氧樹脂組合並以於常溫成為液狀之方式進行調配。該等中，較佳為萘型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚AD型環氧樹脂，就耐濕性之觀點而言，更佳為萘型環氧樹脂。
於本發明中，作為硬化劑(B)，可使用可用於環氧樹脂之硬化劑，其中較佳為酸酐，例如可列舉六氫鄰苯二甲酸酐、烷基六氫鄰苯二甲酸酐、烷基四氫鄰苯二甲酸酐、三烷基四氫鄰苯二甲酸酐、甲基耐地酸酐、甲基降莰烷-2,3-二羧酸。該等可單獨使用，亦可組合使用2種以上。該等中，就低逸氣之觀點而言，較佳為三烷基四氫鄰苯二甲酸酐。作為三烷基四氫鄰苯二甲酸酐之烷基，較佳為直鏈狀或支鏈狀之碳數1~10之烷基，更佳為碳數1~6之烷基，進而較佳為1~4之烷基。三烷基中各烷基可相同或不同。
於本發明中，關於硬化劑(B)之調配量，相對於組成物中之環氧樹脂(A)中之環氧基之莫耳數，硬化劑官能基之莫耳數較佳為0.6~1.2倍，更佳為0.7~1.0倍。若硬化劑之調配量少於上述範圍，則有變得硬化不良之虞，若高於上述範圍，則有硬化劑滲出之虞。
於本發明中，為了促進環氧樹脂與硬化劑之反應而使用硬化 促進劑(C)。作為硬化促進劑(C)，可使用促進環氧樹脂(A)與硬化劑(B)之反應者，例如於硬化劑(B)為酸酐之情形時，可列舉咪唑系硬化促進劑、磷系硬化促進劑、脲系硬化促進劑。該等中，就反應性之觀點而言，較佳為咪唑系硬化促進劑。該等可單獨使用，亦可組合使用2種以上。
硬化促進劑(C)之調配量根據其種類而異，一般就硬化溫度之觀點而言，相對於環氧樹脂(A)100重量份，較佳為3~15重量份，更佳為5~10重量份。
上述硬化促進劑(C)亦可為將硬化促進化合物內包於被覆殼(即外殼)物質而成之微膠囊型硬化促進劑。作為此種微膠囊型硬化促進劑，例如可列舉Novacure HX-3088、Novacure HX-3941(均為商品名；咪唑系化合物與環氧樹脂之加成物，均為Asahi Kasei Epoxy公司製造)。於本發明中，於使用有微膠囊型硬化促進劑之情形時，其調配量係換算為有效硬化促進化合物量之量。
於本發明中，作為加熱型增黏樹脂粒子(D)，只要為可藉由加熱於環氧樹脂組成物中發生膨潤等而使組成物增黏者即可，但具體而言，可使用氯乙烯樹脂、聚醯胺樹脂、丙烯酸系樹脂粒子，較佳可使用例如體積平均一次粒徑為0.2~10μm之丙烯酸系樹脂粒子。若粒徑為0.2μm以上，則向環氧樹脂之分散性良好，若為10μm以下，則晶片與基板之連接性良好。較佳為0.5~3μm。再者，關於體積平均一次粒徑，可將丙烯酸系樹脂粒子乳液利用離子交換水進行稀釋，使用雷射繞射散射粒度分佈測定裝置(例如堀場製作所製造之LA-910W)進行測定。
作為上述加熱型增黏樹脂粒子(D)，可列舉由(甲基)丙烯酸 酯類(例如(甲基)丙烯酸烷基(例如甲基、乙基、丙基、丁基、辛基等)酯、(甲基)丙烯酸苯酯等)、含官能基之(甲基)丙烯酸酯類(例如(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸環氧丙酯等)、丙烯酸類(例如(甲基)丙烯酸、丁烯酸、衣康酸等)等之單體之均聚物或共聚物構成之丙烯酸系樹脂粒子。
作為上述丙烯酸系樹脂粒子，亦可為具有核殼結構之粒子。具有核殼結構之粒子例如可藉由在核粒子之存在下使殼粒子聚合而獲得，其方法為從業者所熟知。
於該情形時，作為殼聚合物，例如可列舉(甲基)丙烯酸甲酯、(甲基)丙烯酸正、異或第三丁酯及(甲基)丙烯酸等單體之共聚物(例如分別含有該等成分55~79.5莫耳%、20~40莫耳%及0.5~10莫耳%)。作為核聚合物，例如可列舉(甲基)丙烯酸甲酯及(甲基)丙烯酸正、異或第三丁酯等單體之共聚物(例如分別含有該等成分20~70莫耳%及30~80莫耳%)。又，作為核聚合物與殼聚合物之重量比，可設為10/90~90/10。
上述丙烯酸系樹脂粒子有藉由加熱而於環氧樹脂組成物中發生膨潤者，及藉由加熱而於環氧樹脂組成物中發生膨潤、溶解者等，但就增黏性之觀點而言，較佳為發生膨潤、溶解者。
於本發明之組成物中，作為上述加熱型增黏樹脂粒子(D)之調配量，就加熱時之樹脂組成物之黏度之觀點而言，環氧樹脂每100重量份，較佳為3~64重量份，更佳為6~50重量份。
於本發明中，進而可調配無機填料。作為上述無機填料，例如可列舉二氧化矽填料(例如熔融二氧化矽、結晶二氧化矽等)、石英玻璃粉末、碳酸鈣、氫氧化鋁等無機粒子。該等中，較佳為二氧化矽填料，更 佳為熔融二氧化矽。關於無機填料之調配量，就供給時之組成物之黏度之觀點而言，相對於樹脂組成物整體100重量份，較佳為30~67重量份，更佳為55~62重量份。
又，於使用無機填料時，可使用矽烷偶合劑。作為上述矽烷偶合劑，例如可列舉3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、2-(3,4-環氧環己基)乙基三甲氧基矽烷、2-(3,4-環氧環己基)乙基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷等，該等可單獨使用，此外亦可組合使用2種以上。關於矽烷偶合劑之調配量，相對於樹脂組成物整體100重量份，較佳為0.01~5重量份，更佳為0.1~2重量份。
於本發明之組成物中，只要不阻礙本發明之目的，則可使用其他添加劑。作為此種添加劑，可列舉消泡劑、調平劑、低應力劑、顏料等。其中，較佳為不使用溶劑。
本發明之組成物通常藉由以特定比率調配各成分後，攪拌60~120分鐘，其後減壓消泡再使用，而可有效地抑制加熱硬化中之發泡。
關於本發明之組成物，測定條件為頻率1Hz、升溫速度10℃/min時之組成物之增黏開始溫度較佳為50~120℃，增黏開始溫度更佳為60~100℃。增黏開始溫度係利用流變計，於上述測定條件藉由動態黏彈性測定法進行測定時，密封樹脂隨著升溫而黏度開始轉為上升時之最小黏度時之溫度。其可根據溫度對黏度之測定值之變化而求出。
關於本發明之組成物，就作業性之觀點而言，15℃以上且未達50℃之範圍之組成物之黏度較佳為1~300Pa．s。上述黏度可藉由上述加熱型增黏樹脂粒子(D)之調配量與無機填料之調配量進行調節。
本發明之組成物之硬化溫度可根據硬化劑及硬化促進劑之種類或調配量進行調節。倒裝晶片安裝時之具體硬化條件於下述步驟(5)中進行說明。
本發明之製造方法係進行倒裝晶片安裝而成之半導體裝置之製造方法，其具有以下步驟：步驟(1)，係對具有電極之基板之電極面供給液狀之半導體密封用環氧樹脂組成物；步驟(2)，係藉由加熱上述基板，而使上述樹脂組成物高黏度化；及步驟(3)，係將形成有凸塊之半導體晶片於加熱下壓抵加壓於上述已高黏度化之樹脂組成物，同時將上述樹脂組成物按壓展開而填充於上述基板與上述半導體晶片之間隙。
本發明之製造方法可進而具有：於上述基板上之電極面將凸塊電性連接之步驟(4)，及加熱上述樹脂組成物使其硬化之步驟(5)。
於本發明之製造方法中，可適宜地使用本發明之組成物。
以下，說明本發明之製造方法。首先，準備於形成有電路之基板上塗佈有特定之阻焊劑圖案的基板。於該基板上之配置晶片之面(即電極面)，藉由印刷法或滴塗法塗佈液狀之半導體密封用環氧樹脂組成物，較佳為塗佈本發明之組成物(步驟(1))。於該情形時，為了良好地確保樹脂組成物之塗佈作業性，於15℃以上且未達50℃之溫度範圍對上述基板供給上述樹脂組成物。於該溫度範圍，本發明之組成物為液狀，較佳為黏度維持1~300Pa．s。將塗佈量設為密封所需之量，且不過多之必要最小量。
其後，藉由加熱上述基板，而使上述樹脂組成物之黏度高黏度化(步驟(2))。具體而言，將在電極面供給有環氧樹脂組成物之基板藉由加熱板、烘箱等手段進行加熱，使樹脂組成物高黏度化。較佳為將加熱 溫度設為50~120℃，將加熱時間設為1~30分鐘。又，已高黏度化之環氧樹脂組成物之黏度理想為10~4000Pa．s之範圍。該黏度係指利用動態黏彈性測定法所測得之1Hz之黏度。藉由在該步驟(2)中使密封樹脂黏度成為高黏度，可於其後之步驟中排除截留之空隙。於密封樹脂黏度低於上述範圍之情形時，難以排除空隙。又，於高於上述範圍之情形時，凸塊之連接困難。再者，於該步驟(2)中，環氧樹脂實質上未硬化。
其後，一般藉由夾具，將具有Cu柱之晶片配置於特定位置，將晶片於加熱下對具有上述已高黏度化之樹脂組成物之基板進行壓抵加壓，同時將上述樹脂組成物按壓展開而填充於上述基板與上述倒裝晶片之間隙(步驟(3))。作為上述加熱溫度，理想為以壓抵加壓時之樹脂溫度成為150~180℃之方式設置。又，將晶片壓抵於基板之壓抵速度理想為0.01~5mm/s。作為壓抵加壓條件，一般為1~15g/柱，較佳為3~10g/柱，作為加熱時間，一般為0.5~10秒，較佳為1~5秒。於該步驟(3)中，較佳為藉由使用本發明之組成物，可使密封樹脂維持於高黏度並繼續升溫直至硬化為止。
於上述基板上之特定連接位置電性連接凸塊、例如於Cu柱之前端形成有焊料層之Cu凸塊的步驟(4)中，於上述基板上之特定連接位置，使設置於Cu柱之前端部之焊料熔融，將Cu柱藉由熔接而電性連接。上述步驟(4)係藉由加熱至焊料熔融溫度以上而達成。作為上述熔融溫度，一般為200~300℃。因此，例如藉由在上述步驟(3)中升溫至焊料熔融溫度以上，事實上亦可同時進行上述步驟(3)與上述步驟(4)。
於步驟(5)中，進行加熱而使上述樹脂組成物硬化。作為 上述加熱溫度，例如以樹脂溫度計為200~300℃，作為加熱時間，為0.5~10秒。因此，例如若將上述步驟(5)設為焊料熔融溫度以上，則會實現焊料熔融，事實上亦可同時進行上述步驟(4)與上述步驟(5)。進而，視需要亦可進行後硬化。作為其溫度及時間條件，為120~180℃，更佳為120~150℃，較佳為30~120分鐘。
上述步驟(4)與步驟(5)之順序可調換，例如亦可於步驟(5)之後進行步驟(4)。
作為本發明之半導體裝置，並無特別限定，可列舉將Cu柱晶片進行倒裝晶片安裝而成之用於行動電話、智慧型手機、移動機器、膝上電腦等電子機器的積體電路裝置等。
以下，揭示實施例，更詳細地說明本發明，但本發明不受該等限定。
實施例1~12及比較例1~4
以表1及表2所示之各成分及調配量(重量份)分別進行調配並於室溫混合，分別製備均勻之液狀組成物。
使用所獲得之各組成物，藉由下述方法對以下之項目進行測定、評估。將結果示於表1及表2。
(1)有無空隙
將各組成物以塗佈量成為3mg之方式於25℃滴塗至基板上。其次，將基板利用加熱板於80℃加熱10分鐘後，壓接該基板與晶片。壓接條件為於使壓抵加壓時之樹脂溫度成為160℃之加熱下，以壓抵速度0.3mm/秒、加壓5g/柱進行3秒。將該壓接後之樣品以峰值溫度260℃加熱4秒，使焊料 熔融及密封樹脂硬化而製作評估樣品。藉由超音波探索、平面研磨觀察有無空隙，並進行評估。使用封裝：MB50-010JY CR/WALTS公司製造。
評估
◎：於密封樹脂中未見空隙
○：於密封樹脂中之一部分存在空隙，但不存在橫跨凸塊間之空隙
×：於整個密封樹脂中存在空隙，或存在橫跨凸塊間之空隙
(2)滴塗性
使用武藏公司製造之金屬噴針20G於25℃噴出密封樹脂，並進行評估。
評估
◎：可於3秒以內噴出4mg
○：可於3~5秒以內噴出4mg
×：噴出4mg需要超過5秒
(3)連接性
藉由超音波探索、剖面觀察調查焊料形狀，並進行評估。使用封裝：MB50-010JY/WALTS公司製造。
評估
○：基板側與晶片之凸塊側之焊料已連接
×：基板側與晶片之凸塊側之焊料未連接，或焊料接合部之形狀自中部變細
(4)黏度穩定性
藉由流變計(TA Instruments公司製造，AR-G2，以下相同)隨時間經過測定於40℃之黏度，並進行評估。
評估
◎：6小時後黏度為1.5倍以下
○：3小時後黏度為1.5倍以下
(5)黏度(25℃)
於25℃，利用HBT旋轉式黏度計進行測定，讀取於10rpm之黏度。
(6)黏度(80℃下經過10分鐘後)
利用流變計，讀取固定於80℃ 10分鐘後之黏度。
(7)增黏開始溫度
利用流變計，讀取以頻率1Hz、升溫速度10℃/min進行測定時密封樹脂黏度上升時之溫度。再者，將升溫至120℃亦未見黏度上升者設為「無增黏」。
表中之用語之含義如下。
環氧樹脂：1,6-雙(2,3-環氧丙氧基)萘
硬化劑：三烷基四氫鄰苯二甲酸酐
丙烯酸系橡膠粒子(1)：Ganz化成公司製造之F301(商品名)平均粒徑2μm之丙烯酸系樹脂粒子
丙烯酸系橡膠粒子(2)：三菱麗陽公司製造之JF003(商品名)平均粒徑1μm之丙烯酸系樹脂粒子
丙烯酸系橡膠粒子(3)：三菱麗陽公司製造之JF001(商品名)平均粒徑1μm之丙烯酸系樹脂粒子
丙烯酸系橡膠粒子(4)：Ganz化成公司製造之F320(商品名)平均粒徑1μm之丙烯酸系樹脂粒子
丙烯酸系橡膠粒子(5)：三菱麗陽公司製造之Metablen C-140A(商品名)丙烯酸系樹脂粒子
二氧化矽填料：平均粒徑2.0μm(球狀熔融二氧化矽)
矽烷偶合劑：環氧基矽烷
硬化促進劑：咪唑系硬化促進劑
根據上述實施例判斷：本發明之組成物實現了Cu柱晶片之倒裝晶片安裝所需之條件即無空隙，且實現了滴塗性、連接性優異等特性。另一方面，比較例之組成物於空隙、滴塗性、連接性方面未顯示出充分之性能。

Claims (15)

  1. 一種半導體密封用環氧樹脂組成物，其用於倒裝晶片安裝，且含有環氧樹脂(A)、硬化劑(B)、硬化促進劑(C)、及相對於上述(A)100重量份為3~64重量份之體積平均一次粒徑為0.2~10μm之加熱型增黏樹脂粒子(D)；加熱型增黏樹脂粒子(D)係藉由加熱而於環氧樹脂組成物中發生膨潤、或發生膨潤、溶解，而使環氧樹脂組成物增黏之樹脂粒子；硬化劑(B)為酸酐；相對於環氧樹脂(A)100重量份，含有硬化促進劑(C)3~15重量份。
  2. 如申請專利範圍第1項之組成物，其中加熱型增黏樹脂粒子(D)為丙烯酸系樹脂粒子。
  3. 如申請專利範圍第1或2項之組成物，其中加熱型增黏樹脂粒子(D)之含量為6~50重量份。
  4. 如申請專利範圍第1或2項之組成物，其中相對於樹脂組成物整體100重量份，進而含有無機填料30~67重量份。
  5. 如申請專利範圍第1或2項之組成物，其中於頻率1Hz、10℃/min之升溫速度之組成物之增黏開始溫度為50~120℃。
  6. 如申請專利範圍第5項之組成物，其中增黏開始溫度為60~100℃。
  7. 如申請專利範圍第1或2項之組成物，其中15℃以上且未達50℃之範圍之組成物之黏度為1~300Pa．s。
  8. 如申請專利範圍第1或2項之組成物，其中倒裝晶片係具有於Cu柱之前端形成有焊料層之Cu凸塊者。
  9. 如申請專利範圍第1或2項之組成物，其中倒裝晶片安裝為樹脂預置型 安裝。
  10. 一種半導體裝置之製造方法，該半導體裝置係進行倒裝晶片安裝而成者，其特徵在於使用申請專利範圍第1至9項中任一項之組成物作為半導體密封用環氧樹脂組成物，且具有以下步驟：步驟(1)，係對具有電極之基板之電極面供給液狀之上述半導體密封用環氧樹脂組成物；步驟(2)，係藉由加熱上述基板，而使上述樹脂組成物高黏度化；及步驟(3)，係將形成有凸塊之半導體晶片於加熱下壓抵加壓於上述已高黏度化之樹脂組成物，同時將上述樹脂組成物按壓展開而填充於上述基板與上述半導體晶片之間隙。
  11. 如申請專利範圍第10項之製造方法，其中於上述步驟(1)中，供給上述樹脂組成物時之溫度為15℃以上且未達50℃，黏度為1~300Pa．s，於上述步驟(2)中，已高黏度化之環氧樹脂組成物之黏度為10~4000Pa．s之範圍。
  12. 如申請專利範圍第10或11項之製造方法，其中於上述步驟(2)中，加熱條件為：加熱溫度50~120℃、加熱時間1~30分鐘。
  13. 如申請專利範圍第10或11項之製造方法，其中於上述步驟(3)中，於使壓抵加壓時之樹脂溫度成為150~180℃之加熱下，以壓抵速度0.01~5mm/s進行壓抵加壓。
  14. 如申請專利範圍第10或11項之製造方法，其進而具有：於上述基板上之電極面電性連接凸塊之步驟(4)，及加熱上述樹脂組成物而使之硬化之步驟(5)。
  15. 如申請專利範圍第14項之製造方法，其中凸塊係於Cu柱之前端形成有焊料層之Cu凸塊，具有電極之基板係除電極面以外經阻焊劑覆膜之基板，於上述步驟(4)中係加熱至焊料熔融溫度以上。
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JP5851952B2 (ja) * 2012-07-19 2016-02-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102453340A (zh) * 2010-10-21 2012-05-16 日立化成工业株式会社 半导体密封填充用热固性树脂组合物以及半导体装置
CN102471464A (zh) * 2009-07-31 2012-05-23 住友电木株式会社 液态树脂组合物及使用其的半导体装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040075802A1 (en) * 1999-12-14 2004-04-22 Mitsui Chemicals, Inc. Sealant for liquid crystal display cell, composition for liquid crystal display cell sealant and liquid crystal display element
JP2001261931A (ja) * 2000-03-14 2001-09-26 Toshiba Chem Corp 液状封止用樹脂組成物
JP4790902B2 (ja) * 2000-11-20 2011-10-12 関西ペイント株式会社 水性塗料組成物
JP2003049050A (ja) * 2001-08-06 2003-02-21 Nagase Chemtex Corp プレゲル化剤を含有するエポキシ樹脂組成物
JP2009013416A (ja) * 2003-01-07 2009-01-22 Sekisui Chem Co Ltd 硬化性樹脂組成物、接着性エポキシ樹脂ペースト、接着性エポキシ樹脂シート、導電接続ペースト、導電接続シート及び電子部品接合体
JP4238124B2 (ja) * 2003-01-07 2009-03-11 積水化学工業株式会社 硬化性樹脂組成物、接着性エポキシ樹脂ペースト、接着性エポキシ樹脂シート、導電接続ペースト、導電接続シート及び電子部品接合体
JP4176619B2 (ja) * 2003-07-18 2008-11-05 信越化学工業株式会社 フリップチップ実装用サイドフィル材及び半導体装置
JP2007197572A (ja) * 2006-01-26 2007-08-09 Matsushita Electric Works Ltd エポキシ樹脂組成物と電子部品の樹脂封止方法並びに樹脂封止電子部品
JP2009242685A (ja) * 2008-03-31 2009-10-22 Nagase Chemtex Corp 半導体封止用エポキシ樹脂組成物
EP2395032B1 (en) * 2009-02-05 2020-08-26 Mitsubishi Chemical Corporation Powdery vinyl polymer, curable resin composition, and cured object
JP6045774B2 (ja) 2010-03-16 2016-12-14 日立化成株式会社 半導体封止充てん用エポキシ樹脂組成物、半導体装置、及びその製造方法
JP2012056979A (ja) * 2010-09-06 2012-03-22 Namics Corp エポキシ樹脂組成物
JP2012077129A (ja) 2010-09-30 2012-04-19 Namics Corp 樹脂組成物、および、それを用いた封止材
JP5830847B2 (ja) * 2010-10-21 2015-12-09 富士通株式会社 半導体装置の製造方法及び接合方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102471464A (zh) * 2009-07-31 2012-05-23 住友电木株式会社 液态树脂组合物及使用其的半导体装置
CN102453340A (zh) * 2010-10-21 2012-05-16 日立化成工业株式会社 半导体密封填充用热固性树脂组合物以及半导体装置

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