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TWI683040B - Co陽極及使用有Co陽極之Co電鍍方法 - Google Patents

Co陽極及使用有Co陽極之Co電鍍方法 Download PDF

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Publication number
TWI683040B
TWI683040B TW107135059A TW107135059A TWI683040B TW I683040 B TWI683040 B TW I683040B TW 107135059 A TW107135059 A TW 107135059A TW 107135059 A TW107135059 A TW 107135059A TW I683040 B TWI683040 B TW I683040B
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TW
Taiwan
Prior art keywords
anode
particles
purity
nitric acid
plating
Prior art date
Application number
TW107135059A
Other languages
English (en)
Chinese (zh)
Other versions
TW201942423A (zh
Inventor
村田周平
小井土由将
浅野孝幸
神永賢吾
Original Assignee
日商Jx金屬股份有限公司
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Application filed by 日商Jx金屬股份有限公司 filed Critical 日商Jx金屬股份有限公司
Publication of TW201942423A publication Critical patent/TW201942423A/zh
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Publication of TWI683040B publication Critical patent/TWI683040B/zh

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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10Electrodes, e.g. composition, counter electrode
    • C25D17/12Shape or form
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10Electrodes, e.g. composition, counter electrode
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/12Electroplating: Baths therefor from solutions of nickel or cobalt

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
TW107135059A 2018-03-28 2018-10-04 Co陽極及使用有Co陽極之Co電鍍方法 TWI683040B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018063008A JP6960363B2 (ja) 2018-03-28 2018-03-28 Coアノード、Coアノードを用いた電気Coめっき方法及びCoアノードの評価方法
JPJP2018-063008 2018-03-28

Publications (2)

Publication Number Publication Date
TW201942423A TW201942423A (zh) 2019-11-01
TWI683040B true TWI683040B (zh) 2020-01-21

Family

ID=68060989

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107135059A TWI683040B (zh) 2018-03-28 2018-10-04 Co陽極及使用有Co陽極之Co電鍍方法

Country Status (7)

Country Link
US (1) US20210010149A1 (ja)
JP (1) JP6960363B2 (ja)
KR (1) KR102435667B1 (ja)
CN (1) CN111971423A (ja)
SG (1) SG11202009378RA (ja)
TW (1) TWI683040B (ja)
WO (1) WO2019187250A1 (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1297364C (zh) * 2005-05-18 2007-01-31 北京科技大学 沉淀-还原制备纳米钴粉的方法
CN103966627A (zh) * 2014-04-30 2014-08-06 金川集团股份有限公司 一种降低高纯钴中杂质Fe含量的方法

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DE3416993A1 (de) * 1984-05-09 1985-11-21 Gerhard Collardin GmbH, 5000 Köln Waessrige, saure, nickel- und cobalt-ionen enthaltende elektrolyte zur galvanischen abscheidung von harten, anlaufbestaendigen, weiss glaenzenden legierungsueberzuegen
JPS62278293A (ja) * 1986-05-26 1987-12-03 C Uyemura & Co Ltd 電子部品の製造方法
DE19609439A1 (de) * 1995-03-14 1996-09-19 Japan Energy Corp Verfahren zum Erzeugen von hochreinem Kobalt und Sputtering-Targets aus hochreinem Kobalt
JP3151194B2 (ja) * 1999-03-19 2001-04-03 株式会社ジャパンエナジー コバルトの精製方法
US6896788B2 (en) * 2000-05-22 2005-05-24 Nikko Materials Company, Limited Method of producing a higher-purity metal
JP4076751B2 (ja) 2001-10-22 2008-04-16 日鉱金属株式会社 電気銅めっき方法、電気銅めっき用含リン銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ
WO2003044246A1 (en) * 2001-11-16 2003-05-30 Honeywell International Inc. Anodes for electroplating operations, and methods of forming materials over semiconductor substrates
JP3611545B2 (ja) * 2001-12-20 2005-01-19 株式会社荏原製作所 めっき装置
US7897265B2 (en) * 2006-01-26 2011-03-01 Hamilton Sundstrand Corporation Low cost, environmentally favorable, chromium plate replacement coating for improved wear performance
KR101945043B1 (ko) 2007-11-01 2019-02-01 제이엑스금속주식회사 구리 애노드 또는 인 함유 구리 애노드, 반도체 웨이퍼에 대한 전기 구리 도금 방법 및 파티클 부착이 적은 반도체 웨이퍼
JP5544527B2 (ja) * 2009-03-02 2014-07-09 国立大学法人信州大学 複合めっき皮膜及びその形成方法並びに電解めっき液
JP4884561B1 (ja) * 2011-04-19 2012-02-29 Jx日鉱日石金属株式会社 インジウムターゲット及びその製造方法
JP5281186B1 (ja) * 2012-10-25 2013-09-04 Jx日鉱日石金属株式会社 インジウムターゲット及びその製造方法
US10337109B2 (en) * 2013-12-02 2019-07-02 Jx Nippon Minig & Metals Corporation High purity cobalt chloride and manufacturing method therefor
CN107849716B (zh) * 2016-03-09 2020-04-10 Jx金属株式会社 高纯度锡及其制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1297364C (zh) * 2005-05-18 2007-01-31 北京科技大学 沉淀-还原制备纳米钴粉的方法
CN103966627A (zh) * 2014-04-30 2014-08-06 金川集团股份有限公司 一种降低高纯钴中杂质Fe含量的方法

Also Published As

Publication number Publication date
CN111971423A (zh) 2020-11-20
SG11202009378RA (en) 2020-10-29
JP2019173104A (ja) 2019-10-10
US20210010149A1 (en) 2021-01-14
JP6960363B2 (ja) 2021-11-05
KR102435667B1 (ko) 2022-08-25
WO2019187250A1 (ja) 2019-10-03
TW201942423A (zh) 2019-11-01
KR20200128097A (ko) 2020-11-11

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