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TWI411622B - 包含有含氮芳香環構造之微影用形成防反射膜之組成物 - Google Patents

包含有含氮芳香環構造之微影用形成防反射膜之組成物 Download PDF

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Publication number
TWI411622B
TWI411622B TW94134985A TW94134985A TWI411622B TW I411622 B TWI411622 B TW I411622B TW 94134985 A TW94134985 A TW 94134985A TW 94134985 A TW94134985 A TW 94134985A TW I411622 B TWI411622 B TW I411622B
Authority
TW
Taiwan
Prior art keywords
compound
forming
antireflection film
composition
lithography
Prior art date
Application number
TW94134985A
Other languages
English (en)
Chinese (zh)
Other versions
TW200621828A (en
Inventor
Tomoyuki Enomoto
Yoshiomi Hiroi
Keisuke Nakayama
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW200621828A publication Critical patent/TW200621828A/zh
Application granted granted Critical
Publication of TWI411622B publication Critical patent/TWI411622B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Epoxy Resins (AREA)
  • Materials For Photolithography (AREA)
TW94134985A 2004-10-12 2005-10-06 包含有含氮芳香環構造之微影用形成防反射膜之組成物 TWI411622B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004297641 2004-10-12

Publications (2)

Publication Number Publication Date
TW200621828A TW200621828A (en) 2006-07-01
TWI411622B true TWI411622B (zh) 2013-10-11

Family

ID=36148216

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94134985A TWI411622B (zh) 2004-10-12 2005-10-06 包含有含氮芳香環構造之微影用形成防反射膜之組成物

Country Status (3)

Country Link
JP (1) JP4697464B2 (ja)
TW (1) TWI411622B (ja)
WO (1) WO2006040918A1 (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101473270B (zh) 2006-06-19 2014-08-06 日产化学工业株式会社 含有具有羟基的缩合系树脂的形成抗蚀剂下层膜的组合物
US8039201B2 (en) 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
JP5218785B2 (ja) 2008-01-30 2013-06-26 日産化学工業株式会社 硫黄原子を含有するレジスト下層膜形成用組成物及びレジストパターンの形成方法
JP2012203393A (ja) * 2011-03-28 2012-10-22 Jsr Corp レジスト下層膜形成用組成物、レジスト下層膜及びパターン形成方法
KR101657052B1 (ko) * 2011-12-29 2016-09-20 금호석유화학 주식회사 유기 반사 방지막 조성물
US9678427B2 (en) * 2013-12-27 2017-06-13 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition containing copolymer that has triazine ring and sulfur atom in main chain
JP6544035B2 (ja) * 2015-05-13 2019-07-17 Jsr株式会社 感光性樹脂組成物およびその用途
KR20190059274A (ko) 2016-10-14 2019-05-30 닛산 가가쿠 가부시키가이샤 아미드기함유 폴리에스테르를 포함하는 레지스트 하층막 형성용 조성물
KR102047538B1 (ko) 2017-02-03 2019-11-21 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
CN110869852A (zh) 2017-08-24 2020-03-06 日产化学株式会社 抗蚀剂下层膜形成用组合物
KR102264693B1 (ko) 2018-06-11 2021-06-11 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
JP6725016B2 (ja) * 2019-02-04 2020-07-15 Jsr株式会社 重合体

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200606591A (en) * 2004-04-09 2006-02-16 Nissan Chemical Ind Ltd Condensed polymer-containing anti-reflective coating for semiconductor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04247643A (ja) * 1991-02-04 1992-09-03 Mitsubishi Electric Corp 半導体装置およびその製造方法
CN1257435C (zh) * 2001-04-10 2006-05-24 日产化学工业株式会社 形成光刻用防反射膜的组合物
JP4243825B2 (ja) * 2002-05-24 2009-03-25 日産化学工業株式会社 リソグラフィー用反射防止膜形成組成物
US7323289B2 (en) * 2002-10-08 2008-01-29 Brewer Science Inc. Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties
DE60330798D1 (de) * 2002-10-09 2010-02-11 Nissan Chemical Ind Ltd Zusammensetzung zur bildung einer antireflexschicht für die lithographie
JP4214380B2 (ja) * 2003-01-09 2009-01-28 日産化学工業株式会社 エポキシ化合物誘導体を含む反射防止膜形成組成物
JP4247643B2 (ja) * 2004-03-16 2009-04-02 日産化学工業株式会社 硫黄原子を含有する反射防止膜

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200606591A (en) * 2004-04-09 2006-02-16 Nissan Chemical Ind Ltd Condensed polymer-containing anti-reflective coating for semiconductor

Also Published As

Publication number Publication date
TW200621828A (en) 2006-07-01
JPWO2006040918A1 (ja) 2008-05-15
WO2006040918A1 (ja) 2006-04-20
JP4697464B2 (ja) 2011-06-08

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