1232242 玖、發明說明： 【發明所屬之技術領域】 本發明係關於一種基板處理裝置及處理方法，其將裝載 有基板的載具以連續搬送至處理室並進行預定的處理，特 別是關於可解決因載具移動在處理室和大氣之間所致之處 理室環境受到污染之問題，進而使得品質良好的薄膜形成 及蝕刻等處理得以穩定進行。 【先前技術】 作為基板處理裝置之習知例，針對圖7所示之製造用蒸 鍍裝置加以說明。如圖7所示，習知之蒸鍍裝置中，用於 搬入載具的加載互鎖真空室1 0、加熱室7 0、蒸鍍室3 0、 用於搬出載具的加載互鎖真空室1 0 ’等，均被藉由門閥 41〜43予以連結，並在每一腔室内設置有載具2的搬送單 元4。作為搬送單元4，適當的架構為：通常，多數個搬送 滾柱設有二排，並利用驅動系統來轉動滾柱，以使載置於 並排滾柱上的載具得以移動。基板3在大氣中裝載於載具 2上，並將載具2從加載互鎖真空室10搬送至加熱室70, 對於基板加熱至預定溫度後，再傳送至蒸鍍室3 0以形成薄 膜。其後，載具2被送出至加載互鎖真空室10’處，再被 取出至大氣中。處理完成的基板3’被回收後，載具2上再 次載有未處理基板3，並返回至加載互鎖真空室10内。藉 由重複進行該等操作，能使薄膜連續形成於多數片基板上。 在該先前技術的方法中，用於搬送基板之載具2在大氣 中及真空中之間反覆搬送。於是，附著於載具上的薄膜會 5 312/發明說明書(補件)/92-08/92113979 1232242 吸附如大氣中的水分等雜質，更且，若另一薄膜附著在其 上，將導致密合性降低而使薄膜易於剝落。因薄膜剝落所 產生的粒子被膜内吸收以致薄膜缺陷，而成為產率降低之 原因。 此外，若圖7的蒸鍍裝置適用於電漿顯示器（PDP)的Mg0 膜形成，發現顯示性能上會出現很大問題。若重複對基板 進行膜形成，如圖8所示，蒸鍵室内之水分壓上升，隨之 M g 0膜質會產生變化。換言之，若重複進行2 5 0次左右的 薄膜形成，蒸鍍室水分壓成為3 X 1 (Γ4 P a左右，而得到的 M g 0膜，如圖9的X光繞射圖譜所示，（1 1 1 )面上混在有（2 0 0 ) 面及（2 2 0 )之形態的薄膜。M g 0膜的次級電子發射係數會因 依據之結晶面而有所不同，因此結晶面若有混在則產生輝 度不均勻，使得大幅降低PDP顯示性能。從而，為了確保 高性能顯示性能，故必須將蒸鍍室的水分壓維持在3 X 1 0 _ 4 P a 以下。 為解決上述附著薄膜之剝落問題及蒸鍍室進入水分等問 題，日本專利特開平9 - 2 7 9 3 4 1號公報揭示一蒸鍍裝置。該 蒸鍍裝置，其構造如圖1 0所示，用於搬入基板的加載互鎖 真空室1 0、蒸鍍室3 0以及用於搬出基板的加載互鎖真空 室1 0 ’等，均被藉由門閥4 1、4 2予以連結，而蒸鍍室3 0 包含用來將從加載互鎖真空室10中搬送過來的基板3裝載 於載具2 (托盤）上之基板裝載部3 1、蒸鍍部3 2以及將處理 完成後的基板送出至加載互鎖真空室1 0 ’内之基板回收部 3 3，而載具2就循環在裝載部、蒸鍍部及回收部之間，可 6 312/發明說明書(補件)/92-08/92113979 1232242 避免其曝露於大氣中。亦即，基板3搬入至加載互鎖真空 室1 0内後，利用由上述搬送並排滾柱所構成的搬送單元 4，使其裝載於基板裝載部3 1的載具2 (托盤）上，並搬送 至蒸鍍部3 2，再通過加熱機構（未圖示）加熱至預定溫度以 形成MgO膜。其後，載具2被搬送至基板回收部3 3處，再 從載具2中取下經處理的基板3 ’僅將基板取出於加載互鎖 真空室1 0 ’内。另一方面，載具2沿著上部搬送路徑返回 至基板裝載部31處。如此之載具一直在真空中搬送，故可 避免使附著薄膜接觸大氣而可大幅控制粒子產生，並且可 控制水分等進入之結果，使得基板整面上形成具有相同結 晶面且均勻的MgO膜，能使其對應高性能PDP。 【發明内容】 (發明所欲解決之問題） 然而，卻發現，在圖1 0所示的蒸鍍裝置中，對應基板 的大型化等實際上有相當大的困難。亦即，由於在僅搬送 單一基板的搬送方法中，基板兩端載置於搬送滾柱上予以 搬送，導致大型基板上產生較大的彎曲。結果，導致搬送 不穩定，甚至基板會斷裂，產生難於製造高精密、高性能 PDP之問題。在為了縮短產距時間，使基板以橫向搬送時， 更突顯出該問題。更且，根據基板的尺寸需進行如搬送滾 柱排之間的間距等各種設定，以致實質無法對應多種尺寸 之基板，具有通用性低之缺點。 如此，為了對應基板的大型化及多樣化，得知必須裝置 作成在搬入基板時已將基板裝載於預定尺寸的載具上之架 312/發明說明書(補件)/92-08/92113979 1232242 構，並利用該裝置構造對於薄膜剝落及維持薄膜品質進行 研究。在研究中發現：已開發一種蒸鍍裝置，該裝置的構 造，係在薄膜形成時用遮罩件來覆蓋載具以抑制薄膜附著 於載具上，且遮罩件不取出而使其留在真空室内（日本專利 特開平1 1 - 1 3 1 2 3 2號公報），該 相較，雖然有所改進，但是仍 的大型PDP。例如，遮罩件開 使薄膜附著於載具上，產生如 開口部較小，就會使蒸鍍材料 成為薄膜厚度較薄且結晶面混 之問題。 上述問題，不僅在MgO蒸鍍 薄膜形成中的ί賤鍵或CVD等成 置中發生，至於在真空基板處 薄膜品質及處理性能沒有造成 的處理之基板搬送方法。 在這種情況下，本發明之目 置及處理方法，其可抑制利用 且可實現穩定的基板搬送及連 並且可對應今後連續大型化之 寸而具有很高的通用性。 (解決問題之手段） 本發明之基板處理裝置，其 入裝載有基板的載具，基板移 裝置與圖7所示的裝置構造 不足以對應高精密、高性能 口大於載具開口部時，就會 同上述問題，而如果遮罩件 流到基板外周部處而堆積， 在的形態，產生輝度不均勻 裝置中，同樣也在用於各種 膜裝置或蝕刻裝置等處理裝 理領域中，正期待有一種對 影響，並可實現連續且穩定 的在於提供一種基板處理裝 載具的處理室環境之污染， 績執行面品質的基板處理’ 基板，且可對應各種基板尺 具有：加載互鎖真空室，搬 載室，具有用來在與載具之 312/發明說明書(補件)/92-08/92113979 8 1232242 間進行移載的移載機構；基板處理室，對於基板進行預定 處理，其特徵在於：具備可移動在上述加載互鎖真空室及 上述基板移載室之間的第一載具，以及可移動在上述基板 移載室及上述基板處理室之間的第二載具，並利用上述移 載機構，可使基板在上述第一及第二載具之間移載。另一 特徵為：將裝載有經處理的基板之上述第一載具，搬出至 上述加載互鎖真空室内。 藉此，例如，能使在成膜時保持基板的載具得以不曝露 於大氣中，因此大氣中吸附或吸入於載具附著膜上而被帶 入蒸鍍室内的水分等所引起的薄膜品質不均勻或薄膜剝落 得以大幅降低，可將無缺陷且均勻的高品質薄膜連續製作 於多數片基板上。 本發明中，上述移載機構，係由具有多數載具保持台且 能互相更換的載具保持機構和基板保持機構各二件，以及 可使載具移動在該二件載具保持機構的保持台之間的移動 機構所構成者。 藉此，利用上述保持機構從上述保持台上的上述第一及 第二載具維持保持基板之狀態，且將載具在上述二件保持 機構之間移動，在維持這狀態下將基板再載置於載具上， 以基板得以移載。該架構，即使大型基板，仍可準確地執 行速率較快的移載，實現生產性較高的基板處理裝置。並 且，與利用機械人等所作的移載方法相較，其可大幅減少 裝置面積，可達成整體基板處理裝置的成本大幅削減。 此外，作為上述基板保持機構而言，較佳採用真空吸附 312/發明說明書(補件)/9108/92113979 1232242 或靜電吸附機構。該保持機構，由於能由背面保持基板， 故不僅在大型基板，也可對多種尺寸的基板免除基板表面 的薄膜沉積面受到污染或刮傷，準確地予以保持，使得在 大氣側載具和真空側載具之間容易且準確地進行基板移 載。 更且，上述基板移載室的特徵在於維持在乾燥氣體環 境，例如採用N 2氣體。藉此，基板移載機構及處理裝置的 機構得以簡化。 另外，上述載具以支撐基板四邊為佳，如此一來，雖然 基板大型化，也可控制基板彎曲且形成整面均勻的薄膜。 更且，本發明，特別適用於如MgO膜等吸溼性較高的薄膜 形成中。 本發明之基板處理方法，係對於用來裝載有基板的載具 進行搬出或搬入的加載互鎖真空室、可在載具之間進行基 板移載的基板移載室、對於基板進行預定處理的基板處理 室，使其等連結配置，並配置有可移動在上述加載互鎖真 空室和上述基板移載室之間的第一載具及可移動在上述基 板移載室和基板處理室之間的第二載具中，其特徵在於： 在上述基板移載室中，在上述第一載具和上述第二載具之 間進行基板移載，可避免向上述基板處理室搬出或搬入的 上述第二載具曝露於大氣中而連續進行基板處理。 在此，如上所述，上述移載機構，較佳為：由將具有二 段載具保持架且能垂直移動的載具保持機構和配置在其上 的基板保持機構各二件，以及可使載具移動在該二件載具 10 312/發明說明書(補件)/92-08/92113979 1232242 保持機構的保持架之間的移動機構所構成者，並且利用上 述保持機構從上述保持架上的上述第一及第二載具維持保 持基板之狀態，且將載具在上述二件保持機構之間移動， 在維持這狀態下將基板再載置於載具上，以進行基板的移 載。 【實施方式】 本發明之基板處理裝置的基本架構，顯示於圖1的模式 圖中。 如圖1所示，基板處理裝置，係具有透過門閥41、4 2 使加載互鎖真空室1 0、基板移載室2 0及處理室3 0予以連 結之構造，能使第一載具1移動在加載互鎖真空室1 0及基 板移載室2 0之間而使基板得以搬送，能使第二載具Γ移 動在基板移載室2 0及處理室3 0之間而使基板得以搬送。 在此，基板移載室2 0被保持在如N 2氣體等乾燥氣體環境 或真空狀態，且安裝有基板移載機構5。 在大氣中將基板3裝載於第一載具1上，再被搬入至加 載互鎖真空室10内，形成真空之後（指基板移載室若為N2 氣體環境時就填充N 2氣體之後），打開門閥4 1，使其移送 至基板移載室2 0内。在基板移載室2 0内，利用基板移載 機構5，將基板3從第一載具1移載至第二載具Γ上，再 使裝載有基板3的第二載具Γ被移送至處理室30,並進行 預定處理之後退回至基板移載室2 0内。在基板移載室中， 經處理的基板3’從第二載具1’移載至第一載具1上，而第 一載具1通過加載互鎖真空室10被取出於大氣中，並對於 11 312/發明說明書(補件)/92-08/92113 979 1232242 經處理基板3 ’與未處理基板3予以交換，再被返回至加載 互鎖真空室1 〇内。如此，其構成為：進入於處理室3 0内 的第二載具未接觸大氣，且基板3、3 ’均以載具搬送，因 此即使大型基板，仍可重複且連續執行穩定的搬送及處理。 下面，關於PDP的MgO膜蒸鍍裝置，基於圖式更進一步 說明本發明的較佳實施形態。圖2為實施關於本發明的MgO 膜形成方法的蒸鍍裝置之架構示意圖，圖3為用來說明在 基板移載室中所進行的基板移載方法的一例之示意圖。本 實施形態中，使加載互鎖真空室1 0、第一輔助室5 0、基板 移載室20、第二輔助室60、第一加熱室70、蒸鍍室30及 載具的搬送方向變換，且由用來進行基板加熱的第二加熱 室8 0所構成。每一腔室之間，配設有門閥4 1〜4 6。第一及 第二加熱室内，裝設有加熱機構（未圖示），用以對每一片 基板予以加熱，加熱至預定溫度為止。 本實施形態中，在加載互鎖真空室1 0、第一辅助室5 0、 第二輔助室6 0、第一加熱室7 0及蒸鍍室3 0内，分別配置 有將載具往圖右向搬送的上部搬送單元及往左向搬送的下 部搬送單元。每一搬送單元4，其適當採用構造為：例如 揭示於日本專利特開平9 - 2 7 9 3 4 1號公報上的二排搬送滾 柱所構成，並利用驅動系統轉動滾柱，使得裝載於滾柱上 的載具被搬送。另外，在第二加熱室80内，可垂直移動地 安裝有單一搬送單元，利用該單元，可使得載具從上部搬 送路徑移動至下部搬送路徑。該搬送單元的垂直部移動機 構，也適當採用日本專利特開平9 - 2 7 9 3 4 1號公報所示的裝 12 312/發明說明書(補件)/92-08/92113979 1232242 置，採用一種透過伸縮管且利用例如汽缸等使搬送單元垂 直移動之構造。 另外，在基板移載室20内，雙層堆疊有不同於載具保 持架的上述搬送單元4，且左右皆配置有二組能垂直移動 構造的載具保持機構2 1、2 2，並可使載具1、Γ移動在二 件載具保持機構的搬送單元之間。此外，作為垂直移動機 構，採用例如上述的日本專利特開平9 - 2 7 9 3 4 1號公報所示 的機構。更且，基板移載室2 0的頂部壁上，裝設有由對於 基板施予真空吸附的公知吸附機構所構成的基板保持機構 23 〇 在蒸鍍室3 0的底壁部處形成有開口 ，而在其下部處裝 設有蒸鍍機構3 5 (例如由中外爐工業（股）製造之電漿源） 及用來收容M g 0的M g 0容納爐床3 4。此外，在開口部近旁 處配設有氧氣體導入機構，以進行調整薄膜品質。 玻璃基板（例如為用於4 2吋電視者），係裝載於水平姿 勢的載具上，且被搬送系統以水平予以搬送。下面，說明 該搬送方法。基板以其四邊處被保持，薄膜形成於基板單 面上（本實施形態中在於下側）。 第一載具1，係循環在大氣中、加載互鎖真空室1 0及基 板移載室2 0之間，第二載具1 ’，則循環在基板移載室2 0 及第二加熱室8 0之間。 首先，玻璃基板3裝載於第一載具1上，搬入至加載互 鎖真空室1 0内。加載互鎖真空室1 0進行排氣至預定氣壓 (約1 (Γ5 P a )為止。之後，打開門閥4 1，使第一載具1搬送 13 312/發明說明書(補件)/92-08/92113979 1232242 至第一輔助室50内。搬入至第一輔助室50内的第一載具 1，利用加熱機構（未圖示）加熱至約1 5 0 °C以進行脫氣處 理。停止加熱，已到達約1 (Γ4 P a之後，導入乾燥N 2氣體至 大氣壓為止。 此時，在第二輔助室6 0的下部搬送單元上，等待有已 裝載有經處理基板3’的第二載具1’，室内已導入有N2氣 體。除此之外，基板移載室充滿著大氣壓的N2氣體。 參見圖3說明從該狀態到基板移載室2 0所進行的基板 移載動作。 自從圖3 (a)狀態，打開門閥4 2，可使第一載具1搬送 至基板移載室2 0的第一載具保持機構2 1上層架上。相對 於此，打開門閥4 3，可使裝載有完成成膜之基板3 ’的第二 載具Γ從第二輔助室6 0搬送至第二載具保持機構2 2的下 層架上圖3(b)。 基板保持機構2 3，利用未圖示的汽缸且透過伸縮管從基 板移載室的頂部壁押下，接觸至各片基板而形成真空吸附 後，再被推高。此時，第一及第二載具保持機構2 1、2 2 移動至相同高度後，轉動搬送滾柱，使得第一及第二載具 分別移動至相反載具保持機構的單元上圖3 ( c )。接著，基 板保持機構2 3再度被押下，經處理基板3 ’裝載於第一載 具1上，而未處理基板3則裝載於第二載具1’上圖3(d)。 其次，第一及第二載具分別移動至相反方向側的單元上圖 3(e)。繼之，第一及第二載具保持機構垂直移動，打開門 閥42、43，使得第一載具1移送至第一輔助室50的下部 14 312/發明說明書(補件)/92-08/92113979 1232242 搬送單元上，而第二載具1 ’則移送至第二輔助室6 0的上 部搬送單元上圖3 ( ί)。 其次，在第二輔助室6 0内，進行排氣至預定氣壓為約 1 0_5Pa之後，打開門閥44，使第二載具搬送至第一加熱室 70内。在第一加熱室70内，利用加熱機構（未圖示）加熱 至約3 0 0 °C為止。再進行脫氣，氣壓達到約1 〇 _3 P a為止。 之後，打開門閥4 5，可使第二載具經過蒸鍍室3 0後移送 至第二加熱室8 0，對其進行加熱預定時間。在第二加熱室 8 0内，裝載有載具的搬送單元4，利用例如曰本專利特開 平9 - 9 7 9 3 4 1號公報所示的垂直移動機構被下降，使得再度 打開門閥4 6，第二載具往與搬入方向相反方向移動，搬入 至蒸鍍室3 0内。 關於基板加熱而言，不限於上述實施形態者，也可在加 載互鎖真空室10或第二輔助室内進行者。 在蒸鍍室3 0中，對於裝載於第二載具1 ’上的基板3上 以預定形成條件來沉積MgO膜。亦即，在蒸鍍室内導入有 80sccm氧氣體，更且導入Ar氣體至氣壓O.lPa為止，再 啟動電漿蒸鍍源，使得對於基板上沉積MgO膜。 之後，第二載具1’，經過第一加熱室70、第二輔助室 60移送至基板移載室20，如上述般，在第一及第二載具之 間進行基板移載。 裝載於第一載具1上的經處理基板3’，經過第一輔助室 50再搬送至加載互鎖真空室10内。經導入大氣後，第一 載具被取出於大氣中，回收經處理基板3 ’，而未處理基板 15 312/發明說明書(補件)/92-08/92113979 1232242 3再度裝載於第一載具1上。 如上述，可將MgO膜連續地沉積於基板上。之間，由於 第二載具1 ’不會與大氣接觸，故能穩定地形成不易薄膜剝 落且無缺陷的MgO膜。加上，所得到的MgO膜的X光繞射 圖而言，即使成膜重複進行3 0 0 0次，仍呈現如圖4所示的 主要具有（1 1 1 )結晶巧者，可繼續製作無輝度不均勻的高性 能PDP。參考而言，B、A及C係表示測定在基板中心及離 於基板端緣3 c m處的繞射圖譜。 圖1的裝置架構，雖然僅單一加載互鎖真空室中進行載 具的搬入、搬出之架構，也可採用裝設二個加載互鎖真空 室，從一方搬入而從另一方搬出之架構。這種一例顯示於 圖5中。圖5裝置中，在處理室3 0兩側邊配置有基板移載 室20、20’及加載互鎖真空室10、10’並配置有二組第一載 具1及第二載具1’，該二組第一載具1，可移動在第一基 板移載室2 0和第一加載互鎖真空室1 0及大氣之間，以及 移動在第二基板移載室20和第二加載互鎖真空室10及大 氣之間，而該第二載具1’可移動在第一基板移載室20、處 理室3 0及第二基板移載室2 0 ’之間。 另夕卜，本發明中，關於基板處理裝置的處理室、輔助室 的數量及配置等，以及同時循環在基板處理裝置内的載具 數量而言，可按照例如每一腔室内的產距時間而適當選定。 此外，本實施形態中，雖然採用真空吸附機構作為基板 移載室的基板保持機構，亦可採用如周知的靜電吸附機構 或揭示於曰本專利特開平9 - 2 7 9 3 4 1號公報的保持基板端 16 312/發明說明書(補件)/92-08/92113979 1232242 緣部之機械式保持機構。再者，基板移載機構，並不限於 上述機構，也可成為：例如，二件基板保持機構安裝於旋 轉軸周圍處，保持第一及第二載具的基板之後，使其旋轉 1 8 0 ° ，維持這狀態並將基板裝載於載具上之構造。另外， 也可成為利用機械人進行移載的構造。更且，上述雖然針 對基板以水平搬送、移載等情形加以說明，但不限於此， 也可成為將基板以垂直搬送、移載且處理的構造。 上述實施形態中雖然針對成列方式蒸鍍裝置加以說 明，但是本發明也可適用於群集式蒸鍍裝置中，如圖6所 示。此時，第一載具1，係移動在加載互鎖真空室1 0和基 板移載室2 0之間，第二載具Γ則移動在基板移載室2 0和 處理室3 0 ( 3 0 ’、3 0 之間。在移載室中，利用如具備二支 機械臂6移載第一及第二載具的基板。 加上，如上述般，本發明，並不限於蒸鍍裝置，除了可 適用於例如在利用濺鍍法製作出可作為曝光用空白光罩所 用的C r氧化膜之裝置上外，也可應用於入蝕刻處理等各種 處理裝置中。 (發明效果） 由上述可見，根據本發明，可減少先前技術的基板搬送 中所發生的污染問題，可穩定地形成品質良好的薄膜，特 別是可提供一種能高速製作如氧化鎂等具有吸溼性的介電 質膜之裝置。 【圖式簡單說明】 圖1為顯示本發明之基板處理裝置的基本架構例之模式 17 312/發明說明書(補件)/92-08/92113979 1232242 圖。 圖2為用來說明PDP的MgO膜蒸鍍裝置之架構示意圖。 圖3 ( a )〜（f )為用來說明基板移載之示意圖。 圖4為顯示利用本發明進行形成的MgO膜的結晶取向性 之X光繞射圖譜。 圖5為顯示另一蒸鍍裝置的架構例之示意圖。 圖6為顯示另一基板處理裝置的架構例之示意圖。 圖7為用來說明習知蒸鍍裝置之架構示意圖。 圖8為表示薄膜沉積基板的生產片數及水分壓之間關係 之圖表。 圖9為顯示利用習知裝置進行形成的M g 0膜的結晶取向 性之X光繞射圖譜。 圖1 0為顯示能夠抑制大氣中水分影響的習知蒸鍍裝置 例之示意圖。 (元 .件符號 說明 ) 卜 1， 載 具 2 載 具 3、 3， 基 板 4 搬 送 單 元 5 基 板 移 載 機 構 6 機 械 臂 10 '10， 加 載 互 鎖 真 空室 20 、20， 基 板 移 載 室 21 、11 載 具 保 持 機 構 312/發明說明書(補件)/92-08/92113979 18 12322421232242 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a substrate processing apparatus and processing method, which continuously transfers a carrier loaded with a substrate to a processing chamber and performs a predetermined process, and particularly relates to a solution capable of solving the problem. The problem of contamination of the processing chamber environment caused by the movement of the carrier between the processing chamber and the atmosphere further stabilizes the processes such as film formation and etching with good quality. [Prior Art] As a conventional example of a substrate processing apparatus, a manufacturing vapor deposition apparatus shown in Fig. 7 will be described. As shown in FIG. 7, in the conventional vapor deposition device, a load interlocking vacuum chamber 10 for carrying in a carrier, a heating chamber 70, a vapor deposition chamber 30, and a load interlocking vacuum chamber 1 for carrying out a carrier 0 'and the like are all connected by door valves 41 to 43, and a transport unit 4 of a carrier 2 is provided in each chamber. As the conveying unit 4, a suitable structure is: In general, a plurality of conveying rollers are provided in two rows, and the driving system is used to rotate the rollers so that the carriers placed on the side-by-side rollers can be moved. The substrate 3 is loaded on the carrier 2 in the atmosphere, and the carrier 2 is transferred from the loading interlocking vacuum chamber 10 to the heating chamber 70. After the substrate is heated to a predetermined temperature, it is transferred to the evaporation chamber 30 to form a thin film. Thereafter, the carrier 2 is sent out to the loading interlocking vacuum chamber 10 ', and is taken out to the atmosphere. After the processed substrate 3 'is recovered, the unprocessed substrate 3 is again loaded on the carrier 2 and returned to the loading interlocking vacuum chamber 10. By repeating these operations, a thin film can be continuously formed on a large number of substrates. In this prior art method, the carrier 2 for transferring the substrate is repeatedly transferred between the atmosphere and the vacuum. Thus, the film attached to the carrier will adsorb impurities such as moisture in the atmosphere, etc. 5 312 / Instruction Manual (Supplement) / 92-08 / 92113979 1232242, and if another film is attached to it, it will cause dense Decreased conformability makes the film easily peel. The particles produced by the peeling of the film are absorbed in the film, causing the film to be defective, which is the cause of the decrease in the yield. In addition, if the vapor deposition device of FIG. 7 is applied to the Mg0 film formation of a plasma display (PDP), it is found that a large problem will occur in the display performance. If the substrate is repeatedly formed into a film, as shown in FIG. 8, the water pressure in the vapor key chamber rises, and the M g 0 film quality changes accordingly. In other words, if the film formation is repeated about 250 times, the vapor pressure in the evaporation chamber becomes about 3 X 1 (Γ4 P a, and the obtained M g 0 film is shown in the X-ray diffraction pattern of FIG. 9, ( 1 1 1) The film with (2 0 0) surface and (2 2 0) morphology is mixed on the surface. The secondary electron emission coefficient of M g 0 film will be different depending on the crystal surface, so if the crystal surface is The presence of mixing results in uneven brightness, which significantly reduces the PDP display performance. Therefore, in order to ensure high-performance display performance, the moisture pressure of the evaporation chamber must be maintained below 3 X 1 0 _ 4 P a. In order to solve the above-mentioned adhesion film For the problems of peeling and moisture entering the vapor deposition chamber, Japanese Patent Laid-Open No. 9-2 7 9 3 4 1 discloses a vapor deposition device. The structure of the vapor deposition device is shown in FIG. The load interlocking vacuum chamber 10, the vapor deposition chamber 30, and the load interlocking vacuum chamber 10 'for carrying out the substrate are connected by gate valves 4 1, 4 2 and the vapor deposition chamber 3 0 contains A substrate for loading the substrate 3 transferred from the load-locking vacuum chamber 10 on the carrier 2 (tray). The plate loading section 31, the vapor deposition section 32, and the substrate after the processing are sent out to the substrate recovery section 3 3 in the load interlocking vacuum chamber 10 ', and the carrier 2 is circulated in the loading section, the vapor deposition section and 6 312 / Invention Manual (Supplement) / 92-08 / 92113979 1232242 can be avoided between the recovery department. That is to say, the substrate 3 is moved into the load-locking vacuum chamber 10, and then used for transportation. The transfer unit 4 composed of side-by-side rollers is loaded on the carrier 2 (tray) of the substrate loading section 31, and transferred to the vapor deposition section 32, and then heated to a predetermined temperature by a heating mechanism (not shown). The MgO film is formed. Thereafter, the carrier 2 is transported to the substrate recovery section 33, and the processed substrate 3 is removed from the carrier 2 and the substrate is only taken out in the load-locking vacuum chamber 10 '. On the other hand, the carrier 2 returns to the substrate loading section 31 along the upper transport path. In this way, the carrier is always transported in a vacuum, so that the adhesion of the adherent film to the atmosphere can be avoided, and particle generation can be greatly controlled, and moisture can be controlled As a result of entering, the same junction is formed on the entire surface of the substrate The uniform and uniform MgO film makes it suitable for high-performance PDPs. [Summary of the Invention] (Problems to be Solved by the Invention) However, it has been found that in the vapor deposition device shown in FIG. 10, the substrate is enlarged, etc. In fact, there are considerable difficulties. That is, in a transfer method that transfers only a single substrate, both ends of the substrate are placed on a transfer roller to be transferred, which results in a large bend on a large substrate. As a result, the transfer is not carried out. It is stable, and even the substrate breaks, which makes it difficult to manufacture high-precision, high-performance PDPs. This problem is even more prominent when the substrate is transported in the lateral direction in order to shorten the production time. In addition, various settings such as the pitch between the transporting roller rows need to be made according to the size of the substrate, so that it is virtually impossible to support substrates of various sizes, which has the disadvantage of low versatility. In this way, in order to cope with the enlargement and diversification of the substrate, it is known that the device must be made into a rack that has the substrate mounted on a carrier of a predetermined size when the substrate is carried in. , And use the device structure to study film peeling and maintain film quality. It was found in the research that a vapor deposition device has been developed. The structure of the device is to cover the carrier with a masking member during film formation to prevent the film from adhering to the carrier, and the masking member is not removed to leave it on. In a vacuum chamber (Japanese Patent Laid-Open No. 1 1-1 3 1 2 3 2), this is a large-scale PDP, although it is improved. For example, when the mask is opened and the film is attached to the carrier, if the opening is small, there is a problem that the vapor-deposited material has a thin film thickness and a mixed crystal surface. The above problems occur not only in low-key bonds or CVD in the formation of MgO vapor-deposited films, but also in the substrate transfer method for processing that does not result in film quality and processing performance on the vacuum substrate. In this case, the purpose and processing method of the present invention can suppress the use, realize stable substrate transfer and connection, and have high versatility in response to the continuous size increase in the future. (Means for Solving the Problems) When the substrate processing device of the present invention is loaded with a substrate-loaded substrate, the substrate transfer device and the device structure shown in FIG. In the same way as above, if the masks flow to the outer periphery of the substrate and accumulate, in the form where the uneven brightness is generated, it is also used in the processing and processing fields such as various film devices and etching devices. A kind of impact on the substrate, which can achieve continuous and stable environment pollution, is to provide a substrate processing loader with environmental pollution of the processing chamber. The substrate can be processed with high quality substrates, and can be used for a variety of substrate scales. Loading interlocking vacuum chamber. The carrier chamber has a transfer mechanism for transferring between the carrier and 312 / Invention Specification (Supplement) / 92-08 / 92113979 8 1232242; the substrate processing chamber performs predetermined processing on the substrate, and is characterized by: The first carrier is movable between the loading interlocking vacuum chamber and the substrate transfer chamber, and the first carrier is movable between the substrate transfer chamber and the substrate A second process chamber between the carrier and using the transfer mechanism, can transfer the substrate between the first and second carrier. Another feature is that the first carrier carrying the processed substrate is carried out into the loading interlocking vacuum chamber. This makes it possible, for example, to prevent the carrier holding the substrate from being exposed to the atmosphere during film formation, and thus the film quality caused by moisture or the like that is adsorbed or sucked into the carrier adhesion film and brought into the vapor deposition chamber in the atmosphere. The unevenness or film peeling is greatly reduced, and a defect-free and uniform high-quality film can be continuously manufactured on most substrates. In the present invention, the above-mentioned transfer mechanism is composed of two carrier holding mechanisms and a substrate holding mechanism each having a plurality of carrier holding tables and can be replaced with each other, and a holder capable of moving a carrier in the two carrier holding mechanisms. Constituted by the moving mechanism between the stations. By this means, the holding mechanism is used to maintain the state of holding the substrate from the first and second carriers on the holding table, and the carrier is moved between the two holding mechanisms, and the substrate is reloaded while maintaining this state. It is placed on the carrier to transfer the substrate. With this architecture, fast transfer can be accurately performed even on large substrates, and a highly productive substrate processing device can be realized. In addition, compared with a transfer method using a robot or the like, the device area can be greatly reduced, and the cost of the overall substrate processing apparatus can be significantly reduced. In addition, as the substrate holding mechanism described above, it is preferable to use a vacuum adsorption 312 / Invention Specification (Supplement) / 9108/92113979 1232242 or an electrostatic adsorption mechanism. Since the holding mechanism can hold the substrate from the back, it can not only contaminate or scratch the thin-film deposition surface of the substrate on substrates of large sizes but also substrates of various sizes. Easy and accurate substrate transfer between side carriers. Furthermore, the substrate transfer chamber is characterized by being maintained in a dry gas environment, such as using N 2 gas. This simplifies the mechanism of the substrate transfer mechanism and the processing device. In addition, the carrier preferably supports the four sides of the substrate. In this way, although the substrate is enlarged, it is possible to control the substrate to bend and form a uniform film over the entire surface. Furthermore, the present invention is particularly suitable for forming a thin film having high hygroscopicity such as a MgO film. The substrate processing method of the present invention is a loading interlocking vacuum chamber for carrying out or loading a carrier for loading a substrate, a substrate transfer chamber for transferring substrates between carriers, and a predetermined processing of the substrate. The substrate processing chamber is arranged so as to be connected, and a first carrier movable between the loading interlocking vacuum chamber and the substrate transferring chamber is arranged, and the substrate processing chamber is movable between the substrate transferring chamber and the substrate processing chamber. The second carrier is characterized in that: in the substrate transfer chamber, the substrate transfer is performed between the first carrier and the second carrier, which can avoid the above-mentioned problems when the substrate is moved out of or into the substrate processing chamber. The second carrier is continuously exposed to the atmosphere for substrate processing. Here, as described above, the above-mentioned transfer mechanism preferably includes two pieces each of a carrier holding mechanism having a two-stage carrier holder and capable of moving vertically and a substrate holding mechanism disposed thereon, and The carrier moves between the two carriers 10 312 / Invention Manual (Supplement) / 92-08 / 92113979 1232242 The moving mechanism constitutes a holding mechanism, and the holding mechanism is used to remove the The first and second carriers maintain a state of holding the substrate, and the carrier is moved between the two holding mechanisms, and the substrate is reloaded on the carrier while maintaining the state, so as to transfer the substrate. [Embodiment] The basic structure of the substrate processing apparatus of the present invention is shown in the schematic diagram of FIG. As shown in FIG. 1, the substrate processing apparatus has a structure in which the load interlocking vacuum chamber 10, the substrate transfer chamber 20, and the processing chamber 30 are connected through the gate valves 41 and 4 2 to enable the first carrier 1 Moving the substrate between the loading interlocking vacuum chamber 10 and the substrate transfer chamber 20 allows the substrate to be transported, and the second carrier Γ can be moved between the substrate transfer chamber 20 and the processing chamber 30 to allow the substrate to be transferred. Transport. Here, the substrate transfer chamber 20 is maintained in a dry gas environment such as N 2 gas or a vacuum state, and the substrate transfer mechanism 5 is mounted. The substrate 3 is loaded on the first carrier 1 in the atmosphere, and then carried into the loading interlocking vacuum chamber 10 to form a vacuum (referred to after the substrate transfer chamber is filled with N 2 gas if the N 2 gas environment is used), The gate valve 41 is opened and transferred to the substrate transfer chamber 20. In the substrate transfer chamber 20, a substrate transfer mechanism 5 is used to transfer the substrate 3 from the first carrier 1 to the second carrier Γ, and the second carrier Γ on which the substrate 3 is loaded is transferred to The processing chamber 30 is returned to the substrate transfer chamber 20 after performing predetermined processing. In the substrate transfer chamber, the processed substrate 3 ′ is transferred from the second carrier 1 ′ to the first carrier 1, and the first carrier 1 is taken out into the atmosphere by loading the interlocking vacuum chamber 10, and For 11 312 / Invention Specification (Supplement) / 92-08 / 92113 979 1232242 The processed substrate 3 'is exchanged with the unprocessed substrate 3 and returned to the loading interlocking vacuum chamber 100. In this way, the structure is such that the second carrier entering the processing chamber 30 is not exposed to the atmosphere, and the substrates 3 and 3 ′ are all transported by the carrier. Therefore, stable transportation and processing can be repeatedly and continuously performed even for large substrates. . Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings with respect to a MDP film deposition apparatus for PDP. FIG. 2 is a schematic diagram of the structure of a vapor deposition device for implementing the MgO film forming method of the present invention, and FIG. 3 is a schematic diagram for explaining an example of a substrate transfer method performed in a substrate transfer chamber. In this embodiment, the transfer directions of the load-locking vacuum chamber 10, the first auxiliary chamber 50, the substrate transfer chamber 20, the second auxiliary chamber 60, the first heating chamber 70, the vapor deposition chamber 30, and the carrier are changed. And is composed of a second heating chamber 80 for heating the substrate. Between each chamber, gate valves 4 1 to 46 are provided. The first and second heating chambers are provided with a heating mechanism (not shown) for heating each substrate to a predetermined temperature. In this embodiment, the loading interlocking vacuum chamber 10, the first auxiliary chamber 50, the second auxiliary chamber 60, the first heating chamber 70, and the vapor deposition chamber 30 are respectively arranged to move the carrier to the figure. Upper transport unit for rightward transport and lower transport unit for leftward transport. Each conveying unit 4 has a structure appropriately adopted, for example, a two-row conveying roller disclosed in Japanese Patent Laid-Open No. 9-2 7 9 3 4 1 and the driving system is used to rotate the rollers so as to load the rollers. The carrier on the roller is transported. In the second heating chamber 80, a single transfer unit is vertically movably mounted, and the unit can move the carrier from the upper transfer path to the lower transfer path. The vertical part moving mechanism of this conveying unit is also appropriately adopted as shown in Japanese Patent Laid-Open No. 9-2 7 9 3 4 No. 12 312 / Invention Specification (Supplement) / 92-08 / 92113979 1232242, and a kind of A structure in which a conveying unit is vertically moved through a telescopic tube and using, for example, a cylinder. In addition, in the substrate transfer chamber 20, the above-mentioned transfer unit 4 which is different from the carrier holder is double-layered, and two sets of carrier holding mechanisms 2 1 and 2 which can move vertically are arranged on the left and right sides, and The carriers 1 and Γ are moved between the transport units of the two-piece carrier holding mechanism. In addition, as the vertical movement mechanism, for example, the mechanism described in Japanese Patent Application Laid-Open No. 9-2 7 9 3 41 described above is used. Furthermore, a substrate holding mechanism 23 composed of a known adsorption mechanism that applies vacuum adsorption to the substrate is mounted on the top wall of the substrate transfer chamber 20, and an opening is formed in the bottom wall portion of the vapor deposition chamber 30. The lower part is provided with an evaporation mechanism 3 5 (for example, a plasma source manufactured by Zhongwai Furnace Industry Co., Ltd.) and an M g 0 accommodating hearth 34 for accommodating M g 0. An oxygen gas introduction mechanism is provided near the opening to adjust the film quality. A glass substrate (for example, for a 42-inch TV) is mounted on a carrier in a horizontal position and is transported horizontally by a transport system. This transport method will be described below. The substrate is held at its four sides, and a thin film is formed on one surface of the substrate (the lower side in this embodiment). The first carrier 1 is circulated in the atmosphere between the loading interlocking vacuum chamber 10 and the substrate transfer chamber 20, and the second carrier 1 'is circulated in the substrate transfer chamber 20 and the second heating chamber. Between 8 and 0. First, the glass substrate 3 is loaded on the first carrier 1 and carried into the load-locking vacuum chamber 10. The interlocking vacuum chamber 10 is loaded and exhausted to a predetermined pressure (about 1 (Γ5 P a). After that, the door valve 41 is opened, and the first carrier 1 is transported 13 312 / Invention Manual (Supplement) / 92-08 / 92113979 1232242 into the first auxiliary chamber 50. The first carrier 1 moved into the first auxiliary chamber 50 is heated to about 150 ° C by a heating mechanism (not shown) for deaeration. Stop heating After reaching 1 (Γ4 P a, dry N 2 gas is introduced to atmospheric pressure. At this time, on the lower transfer unit of the second auxiliary chamber 60, wait for a second load on which the processed substrate 3 ′ has been loaded. With 1 ', N2 gas has been introduced into the room. In addition, the substrate transfer chamber is filled with atmospheric N2 gas. Referring to FIG. 3, the substrate transfer operation from this state to the substrate transfer chamber 20 will be described. Since In the state of FIG. 3 (a), opening the gate valve 42 allows the first carrier 1 to be transferred to the upper carrier of the first carrier holding mechanism 21 of the substrate transfer chamber 20. In contrast, opening the gate valve 4 3 can The second carrier Γ on which the film-formed substrate 3 ′ is loaded is transferred from the second auxiliary chamber 60 to the second carrier holding machine. Fig. 3 (b) is shown on the lower shelf of 2 2. The substrate holding mechanism 23 is pressed down from the top wall of the substrate transfer chamber through a telescopic tube using a cylinder (not shown), and contacts each substrate to form a vacuum suction. At this time, after the first and second carrier holding mechanisms 2 1 and 2 2 are moved to the same height, the transfer roller is rotated so that the first and second carriers are moved to the units of the opposite carrier holding mechanism, respectively. Upper figure 3 (c). Then, the substrate holding mechanism 23 is again pushed down, and the processed substrate 3 'is loaded on the first carrier 1, and the unprocessed substrate 3 is loaded on the second carrier 1'. d). Secondly, the first and second carriers are moved to the units on the opposite directions, respectively, as shown in Figure 3 (e). Then, the first and second carrier holding mechanisms are moved vertically, and the gate valves 42, 43 are opened, so that the first One carrier 1 is transferred to the lower part 14 of the first auxiliary room 50/312 / Invention Specification (Supplement) / 92-08 / 92113979 1232242 and the second carrier 1 'is transferred to the second auxiliary room 6 0 The upper conveying unit is shown in Figure 3 (ί). Next, in the second auxiliary chamber 60, exhaust is performed to a predetermined air pressure of After 10-5 Pa, the door valve 44 is opened, and the second carrier is transported into the first heating chamber 70. In the first heating chamber 70, heating is performed by a heating mechanism (not shown) to about 300 ° C. Then proceed After degassing, the air pressure reaches about 10-3 Pa. After that, the door valve 45 is opened, and the second carrier can be transferred to the second heating chamber 80 after passing through the evaporation chamber 30 and heated for a predetermined time. In the second heating chamber 80, the conveying unit 4 on which the carrier is loaded is lowered by the vertical movement mechanism shown in, for example, Japanese Patent Laid-Open No. 9-9 7 9 3 4 1 so that the door valve 4 6 is opened again. , The second carrier moves in a direction opposite to the carrying-in direction and is carried into the evaporation chamber 30. The substrate heating is not limited to those in the above embodiment, and may be performed in the load interlocking vacuum chamber 10 or the second auxiliary chamber. In the vapor deposition chamber 30, a MgO film is deposited on the substrate 3 loaded on the second carrier 1 'under predetermined formation conditions. That is, an oxygen gas of 80 sccm is introduced into the evaporation chamber, and an Ar gas is introduced to a pressure of 0.1 Pa, and then a plasma evaporation source is started, so that a MgO film is deposited on the substrate. After that, the second carrier 1 'is transferred to the substrate transfer chamber 20 through the first heating chamber 70 and the second auxiliary chamber 60, and the substrate is transferred between the first and second carriers as described above. The processed substrate 3 'loaded on the first carrier 1 is transported to the loading interlocking vacuum chamber 10 through the first auxiliary chamber 50. After being introduced into the atmosphere, the first carrier is taken out into the atmosphere, and the processed substrate 3 'is recovered, while the unprocessed substrate 15 312 / Invention Specification (Supplement) / 92-08 / 92113979 1232242 3 is loaded on the first carrier again 1 on. As described above, the MgO film can be continuously deposited on the substrate. In the meantime, since the second carrier 1 'does not come into contact with the atmosphere, it is possible to stably form an MgO film that is not easily peeled and has no defects. In addition, as far as the obtained X-ray diffraction pattern of the MgO film is concerned, even if the film formation is repeated 3,000 times, it still presents a person with (1 1 1) crystal as shown in FIG. 4. High-performance PDP with uneven brightness. For reference, B, A, and C represent measurements of diffraction patterns at the center of the substrate and 3 cm from the edge of the substrate. The structure of the device shown in FIG. 1 is a structure in which only two loading interlocking vacuum chambers are used to move in and out of the vehicle. It is also possible to use two loading interlocking vacuum chambers to move in from one side and move out of the other. An example of this is shown in Fig. 5. In the apparatus of FIG. 5, substrate transfer chambers 20 and 20 ′ and loading interlocking vacuum chambers 10 and 10 ′ are arranged on both sides of the processing chamber 30 and two sets of first carriers 1 and second carriers 1 ′ are arranged. The two sets of first carriers 1 can be moved between the first substrate transfer chamber 20 and the first loading interlocking vacuum chamber 10 and the atmosphere, and can be moved between the second substrate transfer chamber 20 and the second load. Between the interlocking vacuum chamber 10 and the atmosphere, the second carrier 1 'can be moved between the first substrate transfer chamber 20, the processing chamber 30, and the second substrate transfer chamber 20'. In addition, in the present invention, regarding the number and arrangement of processing chambers and auxiliary chambers of the substrate processing apparatus, and the number of carriers circulating in the substrate processing apparatus at the same time, for example, the production distance time in each chamber can be determined. And appropriately selected. In addition, in this embodiment, although a vacuum adsorption mechanism is used as the substrate holding mechanism of the substrate transfer chamber, a known electrostatic adsorption mechanism or a method disclosed in Japanese Patent Application Laid-Open No. 9-2 7 9 3 4 1 may be used. Mechanical holding mechanism for holding the edge of the substrate 16 312 / Invention Manual (Supplement) / 92-08 / 92113979 1232242. Furthermore, the substrate transfer mechanism is not limited to the above-mentioned mechanism, and may be, for example, a two-piece substrate holding mechanism is installed around the rotation axis, and after holding the substrates of the first and second carriers, it is rotated 1 800. °, the structure that maintains this state and loads the substrate on the carrier. It is also possible to use a robot to transfer the structure. In addition, although the above description has been described with respect to the case where the substrate is horizontally transferred, transferred, etc., it is not limited to this, and it may be a structure in which the substrate is vertically transferred, transferred, and processed. Although the in-line vapor deposition apparatus has been described in the above embodiment, the present invention can also be applied to a cluster vapor deposition apparatus, as shown in Fig. 6. At this time, the first carrier 1 is moved between the loading interlocking vacuum chamber 10 and the substrate transfer chamber 20, and the second carrier Γ is moved between the substrate transfer chamber 20 and the processing chamber 3 0 (3 Between 0 'and 3 0. In the transfer chamber, the substrates of the first and second carriers are transferred using two robot arms 6, for example. In addition, as described above, the present invention is not limited to the vapor deposition device. In addition to being applicable to, for example, a device that produces a Cr oxide film that can be used as a blank mask for exposure by a sputtering method, it can also be applied to various processing devices such as etching. (Effects of Invention) From the above It can be seen that according to the present invention, the problem of contamination that occurs during substrate transfer in the prior art can be reduced, and a good-quality film can be formed stably. In particular, a hygroscopic dielectric film such as magnesium oxide can be produced at high speed. [Schematic explanation] Figure 1 is a diagram showing a basic structure example of the substrate processing apparatus of the present invention, pattern 17 312 / Invention Specification (Supplement) / 92-08 / 92113979 1232242. Figure 2 is used to explain the PDP. Schematic diagram of the structure of the MgO film evaporation device. Figure 3 (a) ~ (f) are schematic diagrams for explaining substrate transfer. Fig. 4 is an X-ray diffraction pattern showing the crystal orientation of the MgO film formed by the present invention. Fig. 5 is a diagram showing another vapor deposition device. A schematic diagram of an example of the structure. Fig. 6 is a schematic diagram showing an example of the structure of another substrate processing apparatus. Fig. 7 is a schematic diagram for explaining the structure of a conventional vapor deposition apparatus. Fig. 9 is an X-ray diffraction pattern showing the crystal orientation of a Mg 0 film formed by a conventional device. Figure 10 is an example of a conventional vapor deposition device showing the influence of moisture in the atmosphere. Schematic diagram (element symbol description) Bu 1, carrier 2 carrier 3, 3, substrate 4 transfer unit 5 substrate transfer mechanism 6 robot arm 10'10, loading interlocking vacuum chambers 20, 20, substrate transfer chamber 21, 11 Vehicle holding mechanism 312 / Invention specification (Supplement) / 92-08 / 92113979 18 1232242
23 基 板 保 持 機構 30 處 理 室 (蒸鍍室） 3 1 基 板 裝 載 部 32 蒸 鍍 部 33 基 板 回 收 部 34 MgO 容^ 納: 爐床 35 蒸 鍍 機 構 4 0 〜4 6 門 閥 50 第 一 輔 助 室 60 第 二 輔 助 室 70 第 一 加 熱 室 80 第 二 加 熱 室 312/發明說明書(補件)/92-08/92113979 1923 Substrate holding mechanism 30 Processing chamber (evaporation chamber) 3 1 Substrate loading section 32 Evaporation section 33 Substrate recovery section 34 MgO Capacity ^ Nano: Hearth 35 Evaporation mechanism 4 0 to 4 6 Gate valve 50 First auxiliary chamber 60 Section Two auxiliary chambers 70 First heating chamber 80 Second heating chamber 312 / Invention manual (Supplement) / 92-08 / 92113979 19