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JP2010062043A - Organic el device manufacturing device and method as well as deposition device and method - Google Patents

Organic el device manufacturing device and method as well as deposition device and method Download PDF

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JP2010062043A
JP2010062043A JP2008227488A JP2008227488A JP2010062043A JP 2010062043 A JP2010062043 A JP 2010062043A JP 2008227488 A JP2008227488 A JP 2008227488A JP 2008227488 A JP2008227488 A JP 2008227488A JP 2010062043 A JP2010062043 A JP 2010062043A
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substrate
chamber
organic
loading
vapor deposition
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JP4768001B2 (en
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Masa Wakabayashi
雅 若林
Nobuhiro Nirasawa
信広 韮沢
Kenji Yumiba
賢治 弓場
Yukio Ochiai
行雄 落合
Mikio Asada
幹夫 浅田
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Priority to JP2008227488A priority Critical patent/JP4768001B2/en
Priority to TW102140479A priority patent/TW201408133A/en
Priority to TW098126272A priority patent/TWI424784B/en
Priority to CN2012103256735A priority patent/CN102938447A/en
Priority to CN201110020657.0A priority patent/CN102157708B/en
Priority to KR1020090075500A priority patent/KR101119790B1/en
Publication of JP2010062043A publication Critical patent/JP2010062043A/en
Priority to KR1020110058421A priority patent/KR101092163B1/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic EL device manufacturing device and method, or a deposition device and method, capable also of conveying a substrate with its deposition face upward in vacuum, using a simple mechanism, and is capable of being finely deposited even at top-face conveyance. <P>SOLUTION: The substrate is conveyed in vacuum, with its deposition facing upward and with the substrate held so that its conveying face does not slide, at least when it moves and delivered inside a vacuum chamber; and later the substrate is held vertical and evaporated. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、有機ELデバイス製造装置及び同製造方法並びに成膜装置及び成膜方法に係わり、特に大型基板を搬送して蒸着法による製造に好適な有機ELデバイス製造装置及び同製造方法に関する。   The present invention relates to an organic EL device manufacturing apparatus, a manufacturing method thereof, a film forming apparatus, and a film forming method, and more particularly to an organic EL device manufacturing apparatus and a manufacturing method that are suitable for manufacturing a large substrate by vapor deposition.

表示デバイスとして有機ELデバイスが注目され、その製造する有力な方法として真空蒸着法がある。表示デバイスの大型化とともに、有機ELデバイスにおいてもその大型化の要求があり、基板サイズは1500mm×1850mmにも及ぶ。
一般的な真空蒸着法における基板搬送方法としては、下から蒸着するために蒸着面を下にして搬送する下面搬送がある。下面搬送では、下面は蒸着面であり蒸着面を保持できず、表示面として使われない枠部分を保持等して搬送する必要がある。または、基板の大型化にともない、基板をトレイに入れて垂直に搬送する垂直搬送も提案されている。前記公知例としては下記のものがある。
An organic EL device has attracted attention as a display device, and there is a vacuum deposition method as an effective method for manufacturing the device. Along with the increase in size of the display device, there is a demand for an increase in the size of the organic EL device, and the substrate size reaches as much as 1500 mm × 1850 mm.
As a substrate conveying method in a general vacuum vapor deposition method, there is a lower surface conveyance in which the vapor deposition surface is conveyed downward for vapor deposition from below. In the lower surface conveyance, the lower surface is a vapor deposition surface, and the vapor deposition surface cannot be held, and it is necessary to convey a frame portion that is not used as a display surface. Or, along with the increase in the size of the substrate, vertical transport has also been proposed in which the substrate is transported vertically in a tray. The known examples include the following.

特開2006−147488号公報JP 2006-147488 A 特開2004−259638号公報JP 2004-259638 A

しかしながら、下面搬送では、枠部分のみ保持の搬送のために、基板の大型化にともないタワミが大きくなる。タワミが大きくなると枠部分の保持力しかないので、特別な保持機構が必要となる。また、保持力が不足すると落下の危険性も高まる。さらに、タワミの問題は、搬送だけでなく、下面蒸着時においてもシャドウマスクのタワミにも影響し、両者の影響が相まって高精彩な蒸着ができないという課題がある。   However, in the lower surface conveyance, since the conveyance of holding only the frame portion is carried out, the deflection becomes larger as the substrate becomes larger. When the wrinkles are large, there is only a holding force for the frame portion, so a special holding mechanism is required. In addition, if the holding force is insufficient, the risk of falling increases. Furthermore, the problem of wrinkles affects not only the conveyance but also the wrinkles of the shadow mask during the lower surface vapor deposition, and there is a problem that high-definition vapor deposition cannot be performed due to the influence of both.

一方、垂直搬送ではタワミの問題は解消できるが、搬送用トレイが必要でそのトレイも大型し、トレイによる搬送時の発塵やトレイの回収・洗浄機構が必要になるなどの課題がある。
従って、本発明の第一の目的は、機構が簡単で上面搬送ができる有機ELデバイス製造装置または同製造方法あるいは成膜装置または成膜方法を提供することである。
また、本発明の第二の目的は、上面搬送においても高精彩に蒸着可能な有機ELデバイス製造装置または同製造方法あるいは成膜装置また成膜方法を提供することである。
On the other hand, in the vertical conveyance, the problem of wrinkles can be solved, but there is a problem that a conveyance tray is necessary, the size of the tray is large, dust generation at the time of conveyance by the tray, and a tray collection / cleaning mechanism are necessary.
Accordingly, a first object of the present invention is to provide an organic EL device manufacturing apparatus or manufacturing method, a film forming apparatus or a film forming method which can be transported from the upper surface with a simple mechanism.
A second object of the present invention is to provide an organic EL device manufacturing apparatus or manufacturing method, film forming apparatus or film forming method capable of high-definition vapor deposition even when transporting the upper surface.

上記第1の目的を達成するために、基板を搬入ロード室から搬入させ、少なくとも1台の真空チャンバを介して、搬出ロード室へと搬送し、前記真空チャンバにおいて蒸着材料を前記基板に蒸着する際に、前記基板の蒸着面を上面にして搬送し、少なくとも前記基板を移動させる場合には前記基板の搬送面が摺動しないように保持することを第1の特徴とする。   In order to achieve the first object, a substrate is loaded from a loading load chamber, conveyed to a loading load chamber via at least one vacuum chamber, and vapor deposition material is deposited on the substrate in the vacuum chamber. At this time, the first feature is that the substrate is transported with the vapor deposition surface as an upper surface, and at least when the substrate is moved, the transport surface of the substrate is held so as not to slide.

また、上記第二の目的を達成するために、前記真空チャンバ内で前記基板を受渡し、その後前記基板を蒸着する位置に移動させることを第2の特徴とする。
さらに、上記第二の目的を達成するために、前記基板の蒸着面を上面にして搬送する場合には、第1の特徴に加え、前記移動は前記基板面を略垂直に立てることを第3の特徴とする。
In order to achieve the second object, the second feature is that the substrate is delivered in the vacuum chamber and then moved to a position where the substrate is deposited.
Furthermore, in order to achieve the second object, in the case where the substrate is transported with the vapor deposition surface of the substrate as the upper surface, in addition to the first feature, the movement causes the substrate surface to stand substantially vertically. It is characterized by.

本発明によれば、簡単な構造で上面搬送ができる有機ELデバイス製造装置または同製造方法あるいは成膜装置または成膜方法を提供することができる。
また、本発明によれば、上面搬送においても高精彩に蒸着可能な有機ELデバイス製造装置または同製造方法あるいは成膜装置または成膜方法を提供することができる。
ADVANTAGE OF THE INVENTION According to this invention, the organic EL device manufacturing apparatus or the manufacturing method or film-forming apparatus or film-forming method which can carry an upper surface with a simple structure can be provided.
Further, according to the present invention, it is possible to provide an organic EL device manufacturing apparatus or manufacturing method, a film forming apparatus or a film forming method capable of high-definition evaporation even when transporting the upper surface.

発明の第1の実施形態を図1から図7を用いて説明する。有機ELデバイス製造装置は、単に発光材料層(EL層)を形成し電極で挟むだけの構造ではなく、陽極の上に正孔注入層や輸送層、陰極の上に電子注入層や輸送層など様々な材料が薄膜としてなる多層構造を形成したり、基板を洗浄したりする。図1はその製造装置の一例を示したものである。   A first embodiment of the invention will be described with reference to FIGS. Organic EL device manufacturing equipment is not just a structure in which a light emitting material layer (EL layer) is formed and sandwiched between electrodes, but a hole injection layer or transport layer on the anode, an electron injection layer or transport layer on the cathode, etc. A multilayer structure in which various materials are formed as a thin film is formed, and a substrate is cleaned. FIG. 1 shows an example of the manufacturing apparatus.

本実施形態における有機ELデバイス製造装置100は、大別して処理対象の基板6を搬入するロードチャンバ3、基板6を処理する4つのクラスタ(A〜D)、各クラスタ間又はクラスタとロードチャンバ3あるいは次工程(封止工程)との間の設置された5つの受渡室4から構成されている。次工程の後方には基板を搬出するために少なくとも後述するロード室31のようなアンロード室(図示せず)がある。   The organic EL device manufacturing apparatus 100 according to the present embodiment is roughly divided into a load chamber 3 that carries a substrate 6 to be processed, four clusters (A to D) that process the substrate 6, between each cluster, or between the cluster and the load chamber 3, or It is comprised from the five delivery chambers 4 installed between the following processes (sealing process). Behind the next process is an unload chamber (not shown) such as a load chamber 31 which will be described later in order to carry out the substrate.

ロードチャンバ3は、前後に真空を維持するためにゲート弁10を有するロード室31と、ロード室31から基板6(以下、単に基板という)を受取り、旋回して受渡室4aに基板6を搬入する搬送ロボット5aからなる。各ロード室31及び各受渡室4は前後にゲート弁10を有し、当該ゲート弁10の開閉を制御し真空を維持しながらロードチャンバ3あるいは次のクラスタ等へ基板を受渡する。   The load chamber 3 receives a substrate 6 (hereinafter simply referred to as a substrate) from the load chamber 31 and the load chamber 31 having the gate valve 10 in order to maintain a vacuum in the front-rear direction, and turns to carry the substrate 6 into the delivery chamber 4a. It consists of a transfer robot 5a. Each load chamber 31 and each delivery chamber 4 have a gate valve 10 in the front and rear, and deliver the substrate to the load chamber 3 or the next cluster while controlling the opening and closing of the gate valve 10 and maintaining a vacuum.

各クラスタ(A〜D)は、一台の搬送ロボット5を有する搬送チャンバ2と、搬送ロボット5から基板を受取り、所定の処理をする図面上で上下に配置された2つの処理チャンバ1(第1の添え字a〜dはクラスタを示し、第2の添え字u、dは上側下側を示す)を有する。搬送チャンバ2と処理チャンバ1の間にはゲート弁10が設けてある。   Each cluster (A to D) includes a transfer chamber 2 having a single transfer robot 5 and two processing chambers 1 (first) arranged on the top and bottom of the drawing for receiving a substrate from the transfer robot 5 and performing a predetermined process. 1 subscripts a to d indicate clusters, and second subscripts u and d indicate upper and lower sides). A gate valve 10 is provided between the transfer chamber 2 and the processing chamber 1.

図2は、搬送チャンバ2と処理チャンバ1の構成の概要を示す。処理チャンバ1の構成は処理内容によって異なるが、真空で発光材料を蒸着しEL層を形成する真空蒸着チャンバ1buを例にとって説明する。図3は、搬送チャンバ2bと真空蒸着チャンバ1buの構成の模式図と動作説明図である。図2における搬送ロボット5は、全体を上下に移動可能(図3の矢印53参照)で、左右に旋回可能な2リンク構造のアーム51を有し、その先端には基板搬送用の櫛歯状ハンド52を上下二段に2本有する。上下二段にすることによって、上は搬入用、下は搬出用とし、一つの動作で搬入出処理を同時に行なうことができる。2本ハンドにするか1本ハンドにするかは処理内容によって決める。以後の説明では、説明を簡単にするために1本ハンドで説明する。   FIG. 2 shows an outline of the configuration of the transfer chamber 2 and the processing chamber 1. Although the configuration of the processing chamber 1 varies depending on the content of processing, a vacuum deposition chamber 1bu that deposits a luminescent material in vacuum to form an EL layer will be described as an example. FIG. 3 is a schematic diagram and an operation explanatory diagram of the configuration of the transfer chamber 2b and the vacuum deposition chamber 1bu. The transfer robot 5 in FIG. 2 has a two-link structure arm 51 that can move up and down as a whole (see arrow 53 in FIG. 3) and can turn left and right. Two hands 52 are provided in two upper and lower stages. By making the upper and lower two stages, the upper part is for carrying in and the lower part is for carrying out, and the carrying-in / out process can be performed simultaneously by one operation. Whether to use two hands or one hand depends on the processing. In the following description, a single hand is used for the sake of simplicity.

一方、真空蒸着チャンバ1buは、大別して発光材料を蒸発させ基板6に蒸着させる蒸着部7と、基板6の必要な部分に蒸着させるアライメント部8と、搬送ロボット5と基板の受渡しを行い、蒸着部7へ基板6を移動させる処理受渡部9からなる。アライメント部8と処理受渡部9は右側Rラインと左側Lラインの2系統設ける。処理受渡部9は、搬送ロボット5の櫛歯状ハンド52と干渉することなく基板6を受渡し可能で、基板6を固定する手段94を有する櫛歯状ハンド91と、前記櫛歯状ハンド91を旋回させて基板6を直立させて、アライメント部8あるいは蒸着部7に移動し対面させる基板面制御手段92を有する。基板6を固定する手段94としては、真空中であることを考慮して電磁吸着やクリップ等の手段を用いる。アライメント部8は、図4に示すマスク81m、フレーム81fからなるシャドウマスク81と基板上のアライメントマーク84によって基板6とシャドウマスク81とを位置合せするアライメント駆動部83とを有する。蒸着部7は、蒸着源71をレール76上に沿って上下方向に移動させる上下駆動手段72、蒸着源71をレール75上に沿って左右のアライメント部間移動する左右駆動ベース74を有する。蒸着源71は、内部に蒸着材料である発光材料を有し、前記蒸着材料を加熱制御(図示せず)することによって安定した蒸発速度が得られ、図3の引出し図に示すように、ライン状に並んだ複数の噴射ノズル73から噴射される構造となっている。必要によっては、安定した蒸着が得られるように添加剤も同時に加熱して蒸着する。   On the other hand, the vacuum deposition chamber 1bu is roughly divided into a deposition unit 7 for evaporating the luminescent material and depositing it on the substrate 6, an alignment unit 8 for depositing on a necessary part of the substrate 6, and a transfer robot 5 to and from the substrate to deliver the substrate. The processing delivery unit 9 moves the substrate 6 to the unit 7. The alignment unit 8 and the processing delivery unit 9 are provided in two systems, a right R line and a left L line. The processing delivery unit 9 can deliver the substrate 6 without interfering with the comb-like hand 52 of the transport robot 5, and has a comb-like hand 91 having means 94 for fixing the substrate 6, and the comb-like hand 91. A substrate surface control unit 92 is provided to turn the substrate 6 upright and move to the alignment unit 8 or the vapor deposition unit 7 so as to face each other. As the means 94 for fixing the substrate 6, means such as electromagnetic attraction and clips are used in consideration of being in a vacuum. The alignment unit 8 includes a shadow mask 81 composed of a mask 81m and a frame 81f shown in FIG. 4 and an alignment driving unit 83 that aligns the substrate 6 and the shadow mask 81 with alignment marks 84 on the substrate. The vapor deposition unit 7 includes a vertical drive unit 72 that moves the vapor deposition source 71 in the vertical direction along the rail 76, and a left and right drive base 74 that moves the vapor deposition source 71 along the rail 75 between the left and right alignment units. The vapor deposition source 71 has a light emitting material that is a vapor deposition material inside, and a stable evaporation rate can be obtained by heating control (not shown) of the vapor deposition material. As shown in the drawing of FIG. It is the structure which injects from the some injection nozzle 73 arranged in a line. If necessary, the additive is also heated and vapor-deposited so that stable vapor deposition is obtained.

以上、説明した実施形態の中で、搬送機構を構成するのは、ロードチャンバ3のロード室31、搬送ロボット5a、受渡室4、搬送チャンバ2の搬送ロボット5及び処理チャンバ1の処理受渡部9である。これらを大別すると、櫛歯状のハンドを有する搬送ロボット5,5aと、そのハンドが挿入されるロード室31、受渡室4及び処理受渡部9とに分かれる。これら二組が交互に作用しながら基板6を搬送していくことになる。   As described above, in the embodiment described above, the transfer mechanism includes the load chamber 31 of the load chamber 3, the transfer robot 5a, the delivery chamber 4, the transfer robot 5 of the transfer chamber 2, and the processing delivery section 9 of the processing chamber 1. It is. These are roughly divided into transfer robots 5 and 5a having comb-like hands, and a load chamber 31, a delivery chamber 4 and a processing delivery unit 9 into which the hands are inserted. The substrate 6 is conveyed while these two sets act alternately.

図5は、その一例として、受渡室4の載置台41に搬送ロボット5の櫛歯状ハンド52が挿入し、基板6を受取る状況と構成を示したものである。基板6の上面は表示面となる被蒸着面であり、その下面は非表示面である。従って、従来の下面搬送では接触可能な枠部のみで保持していたが、上面搬送では中央部含めて接触領域として利用できるので撓みの少ない安定した搬送が可能である。図5では、櫛歯状ハンド52は2本のアームを有しているの、受渡室では3本のレール状の基板保持部41を有している。櫛歯状ハンド52の基板6と接触する上面52uには、ハンド旋回時に基板が摺動しないように保持する保持手段として粘着性のゴム20が設けられており。面状にゴムを貼付してもよいがあまり粘着力が高いと離脱性が悪くなることも考慮する必要がある。粘着性のゴムのほか、真空環境を考慮して電磁吸着なども適用可能である。   FIG. 5 shows, as an example, a situation and configuration in which the comb-like hand 52 of the transfer robot 5 is inserted into the mounting table 41 of the delivery chamber 4 and receives the substrate 6. The upper surface of the substrate 6 is a vapor deposition surface serving as a display surface, and the lower surface thereof is a non-display surface. Therefore, while the conventional lower surface conveyance is held only by the contactable frame portion, the upper surface conveyance can be used as a contact area including the center portion, and therefore, stable conveyance with little bending is possible. In FIG. 5, the comb-like hand 52 has two arms, and the delivery chamber has three rail-like substrate holding portions 41. An adhesive rubber 20 is provided on the upper surface 52u of the comb-like hand 52 that contacts the substrate 6 as a holding means for holding the substrate so that the substrate does not slide when the hand is turned. Rubber may be affixed to the surface, but it is also necessary to consider that if the adhesive strength is too high, the releasability will deteriorate. In addition to sticky rubber, electromagnetic adsorption can be applied in consideration of the vacuum environment.

次に、高精彩の蒸着を可能とすることを重点的に説明する。
図6は、図1から図3に示した処理チャンバ1の処理フローを示した図である。本実施形態での処理の基本的な考え方は、上面搬送された基板6を垂直にたてて、アライメント部8に搬送し、蒸着する。搬送時基板6の下面が蒸着面であるならば反転する必要があるが、上面が蒸着面であるので垂直にたてるだけでよい。
Next, it will be described mainly that high-definition deposition is possible.
FIG. 6 is a diagram showing a processing flow of the processing chamber 1 shown in FIGS. 1 to 3. The basic idea of the processing in this embodiment is that the substrate 6 transported on the upper surface is set up vertically, transported to the alignment unit 8, and deposited. If the lower surface of the substrate 6 is a vapor deposition surface at the time of conveyance, it is necessary to invert it.

基板を垂直に立てて蒸着する理由を図7を用いて説明する。図4に示すように大型基板に対応するシャドウマスク81の大きさは、1800mm×2000mm程度になり、しかもマスク81mの厚さは40μmであり、今後さらに薄くなる傾向がある。そこで、下面から蒸着すると基板の重さ約5Kg、マスク81mの重さが200Kgであり、マスク81mには両者の重みが影響して大きく撓むことになる。撓んだ基板に撓んだマスク81mで蒸着するので、隣の色領域まで蒸着してしまい、色ボケの状態が生じ彩度が落ちる。そこで、基板6とシャドウマスク81とをともに立てた状態にして重みによるタワミを解消して、高精彩の色を得るようにした。   The reason why the substrate is deposited vertically will be described with reference to FIG. As shown in FIG. 4, the size of the shadow mask 81 corresponding to the large-sized substrate is about 1800 mm × 2000 mm, and the thickness of the mask 81 m is 40 μm. Therefore, when vapor deposition is performed from the lower surface, the weight of the substrate is about 5 kg, and the weight of the mask 81m is 200 kg. Since vapor deposition is performed on the bent substrate with the bent mask 81m, vapor deposition is performed up to the adjacent color region, resulting in a state of color blur and a decrease in saturation. Therefore, the substrate 6 and the shadow mask 81 are both set up to eliminate wrinkles due to the weight, thereby obtaining a high-definition color.

次に本実施形態の処理フローを図3を参照しながら図6を用いて詳細に説明する。図3において基板6が存在するところは実線で示す。
まず、Rラインにおいて、基板6Rを搬入し、基板6Rを垂直に立ててアライメント部8Rに移動し、位置合せを行なう(StepR1からStepR3)。このとき、基板は蒸着面を上にした上面搬送であるので、反転等することなく直ぐに位置合せを行なうことができる。位置合せは、図3の引出し図に示すように、CCDカメラ86で撮像し、基板6に設けられたアライメントマーク84がマスク81mに設けられた窓85の中心にくるように、シャドウマスク81Rを前記アライメント駆動部83で制御することによって行なう。本蒸着が赤(R)を発光させる材料であるならば、図4に示すようにマスク81mのRに対応する部分に窓があいており、その部分が蒸着されることになる。その窓の大きさは色によって異なるが平均して幅50μm、高さ150μm程度である。マスク81mの厚さは40μmであり、今後さらに薄くなる傾向がある。
Next, the processing flow of the present embodiment will be described in detail with reference to FIG. In FIG. 3, the place where the substrate 6 exists is indicated by a solid line.
First, in the R line, the substrate 6R is loaded, the substrate 6R is vertically set up, moved to the alignment unit 8R, and alignment is performed (Step R1 to Step R3). At this time, since the substrate is transported from the upper surface with the vapor deposition surface up, alignment can be performed immediately without being reversed. For alignment, as shown in the drawing of FIG. 3, the shadow mask 81R is imaged by the CCD camera 86 so that the alignment mark 84 provided on the substrate 6 is at the center of the window 85 provided on the mask 81m. Control is performed by the alignment driving unit 83. If the main vapor deposition is a material that emits red (R), as shown in FIG. 4, there is a window in a portion corresponding to R of the mask 81m, and this portion is vapor deposited. The size of the window varies depending on the color, but on average it is about 50 μm wide and 150 μm high. The thickness of the mask 81m is 40 μm and tends to be thinner in the future.

位置合せが終了したら、蒸着源71をRライン側に移動させ(StepR4)、その後ライン状の蒸着源71を上又は下に移動させて蒸着する(StepR5)。Rライン蒸着中に、LラインではRラインと同様にStepL1からStepL3の処理を行なう。すなわち、他の基板6Lを搬入し、当該基板6Lを垂直に立ててアライメント部8Lに移動し、シャドウマスク81Lとの位置合せを行なう。Rラインの基板6Rの蒸着を完了すると、蒸着源71はLラインに移動し(StepL4)、Lラインにある基板6Lを蒸着する(StepL5)。このとき蒸着源71がRラインの蒸着領域から完全に出る前に、基板6Rがアライメント部8Rから離れると、不必要に蒸着される可能性があるので、完全に出た後に、基板6Rの処理チャンバ1からの搬出動作を開始し、その後新たな基板6Rの準備に入る。前記不必要な蒸着を避けるためにラインの間に仕切り板11を設ける。なお、図3は、StepR5及びStepL1の状態を示している。即ち、Rラインでは蒸着を開始し、Lラインでは真空蒸着チャンバ1buに基板を搬入した状態である。   When the alignment is completed, the vapor deposition source 71 is moved to the R line side (Step R4), and then the linear vapor deposition source 71 is moved up or down for vapor deposition (Step R5). During the R line deposition, the processing from StepL1 to StepL3 is performed on the L line in the same manner as the R line. That is, another substrate 6L is carried in, the substrate 6L is set up vertically, moved to the alignment unit 8L, and aligned with the shadow mask 81L. When the deposition of the substrate 6R on the R line is completed, the deposition source 71 moves to the L line (Step L4) and deposits the substrate 6L on the L line (Step L5). At this time, if the substrate 6R is separated from the alignment unit 8R before the vapor deposition source 71 completely exits the vapor deposition region of the R line, there is a possibility that unnecessary vapor deposition may occur. The carrying-out operation from the chamber 1 is started, and then preparation for a new substrate 6R is started. In order to avoid the unnecessary deposition, a partition plate 11 is provided between the lines. FIG. 3 shows the state of StepR5 and StepL1. That is, the vapor deposition is started on the R line, and the substrate is carried into the vacuum vapor deposition chamber 1bu on the L line.

その後、上記フローを連続して行なうことにより、蒸発部7の移動時間を除いて無駄に蒸着材料を使用することなく蒸着することができる。蒸着に必要な時間とその他処理時間は略1分であり、蒸着源71の移動時間を5秒とすれば、従来は1分の無駄な蒸着時間が本実施形態では5秒に短縮できる。上記本実施形態によれば、図6に示すように真空蒸着チャンバ1buの処理基板1枚の処理サイクルは実質的に蒸着時間+蒸着源71の移動時間となり、生産性を向上させることができる。前述の条件で処理時間を評価すれば、従来の2分に対し、本発明では1分5秒となり、略2倍に生産性を向上することができる。さらに、同一量の蒸着材料に対して蒸着部7が消費する時間は、従来の例と変わりがないが、生産量が2倍になった分だけ、壁等に付着する材料の付着量が低減するので、壁等の付着に対するメインテナンスサイクル及び所要時間も短くなる。その結果、本実施形態によれば装置の稼働率を向上させることができる。   Thereafter, by continuously performing the above-described flow, it is possible to perform vapor deposition without wastefully using the vapor deposition material except for the moving time of the evaporation unit 7. The time required for vapor deposition and other processing time is approximately 1 minute. If the moving time of the vapor deposition source 71 is 5 seconds, the wasteful vapor deposition time of 1 minute can be reduced to 5 seconds in the present embodiment. According to the present embodiment, as shown in FIG. 6, the processing cycle of one processing substrate in the vacuum vapor deposition chamber 1bu is substantially the vapor deposition time + the movement time of the vapor deposition source 71, and productivity can be improved. If the processing time is evaluated under the above-mentioned conditions, the present invention is 1 minute 5 seconds compared to the conventional 2 minutes, and the productivity can be improved approximately twice. Furthermore, the time that the vapor deposition unit 7 consumes for the same amount of vapor deposition material is the same as the conventional example, but the amount of material adhering to the wall and the like is reduced by the amount of production doubled. As a result, the maintenance cycle and the required time for the adhesion of walls and the like are also shortened. As a result, according to the present embodiment, the operating rate of the apparatus can be improved.

以上、本実施形態によれば、蒸着装置を有する装置において簡単な構造で上面搬送ができる。
また、本実施形態によれば、上面搬送行い基板を立てて蒸着することで、基板に高精彩に蒸着することができる。
As described above, according to the present embodiment, the upper surface can be conveyed with a simple structure in the apparatus having the vapor deposition apparatus.
Moreover, according to this embodiment, it can vapor-deposit on a board | substrate highly precisely by carrying out an upper surface and carrying out vapor deposition with a board | substrate standing upright.

次に、第2、第3の実施形態を図8を用いて説明する。第1の実施形態では、蒸着源71が移動して処理したが、本実施形態では、図8(a)はアライメント部8が移動する例であり、図8(b)は処理受渡部9が移動する例を示す。基本的な動きは実施形態1と同じである。   Next, second and third embodiments will be described with reference to FIG. In the first embodiment, the deposition source 71 is moved and processed, but in this embodiment, FIG. 8A is an example in which the alignment unit 8 is moved, and FIG. An example of moving is shown. The basic movement is the same as in the first embodiment.

まず、図8(a)の、処理受渡部9から基板6を受取り保持したアライメント部8が移動し処理する例を説明する。なお、図8において、基板6、アライメント部8及び処理受渡部9が存在するところは実線で示す。   First, an example in which the alignment unit 8 that receives and holds the substrate 6 from the processing delivery unit 9 moves and processes in FIG. 8A will be described. In FIG. 8, the solid line indicates that the substrate 6, the alignment unit 8, and the processing delivery unit 9 are present.

まず、Rラインにおいて、基板6Rを搬入し、基板6Rを垂直に立ててアライメント部8Rに基板6Rを移動し、位置合せを行なう。その後、アライメント部8R、8Lはアライメントベース8Bにより一体となって蒸着部7の前まで左に移動する。なお、アライメント部8R,8Lは、個別に左右に移動する構造であってもよい。その移動機構(図示せず)としては、実施形態1と同様にレールを設け、その上を移動させる方法を用いてもよい。次に基板6Rの蒸着を行なう。基板6Rが蒸着している時は、アライメント部8Lは、処理受渡部9Lの前に来ているので、他の基板6Lを受取り、位置合せ等の処理を行なうことができる。基板6Rの蒸着処理が終了したならば、アライメント部8R、8Lは一体となって蒸着部7の前まで右に移動し、基板6Lの蒸着処理を行なう。今度は、アライメント部8Rは、処理受渡部9Rの前に来ているので、他の基板6Rを受取り、次の蒸着の準備ができる。なお、図8(a)は、基板6Lを蒸着中で、基板6Rがアライメント部8Rに受取ったところを示す。   First, in the R line, the substrate 6R is carried in, the substrate 6R is set up vertically, the substrate 6R is moved to the alignment unit 8R, and alignment is performed. Thereafter, the alignment portions 8R and 8L are moved together by the alignment base 8B to the left before the vapor deposition portion 7. The alignment portions 8R and 8L may be structured to move individually to the left and right. As the moving mechanism (not shown), a method of providing a rail and moving the same as in the first embodiment may be used. Next, the substrate 6R is deposited. When the substrate 6R is vapor-deposited, the alignment unit 8L comes before the processing delivery unit 9L, so that it can receive another substrate 6L and perform processing such as alignment. When the deposition process for the substrate 6R is completed, the alignment units 8R and 8L are moved together to the right before the deposition unit 7 to perform the deposition process for the substrate 6L. This time, since the alignment unit 8R comes before the processing delivery unit 9R, it can receive another substrate 6R and be ready for the next vapor deposition. FIG. 8A shows that the substrate 6L is being deposited and received by the alignment unit 8R.

次に、図8(b)の、処理受渡部9が移動して処理する例を説明する。この場合は、アライメント部8と蒸着部7は固定である。処理受渡部9R、9Lが一体となって左右に移動する。なお、処理受渡部9R,9Lは個別に左右に移動する構造であってもよい。本例では、処理受渡部9が移動し、基板を垂直にたてて、位置合せをし、蒸着する。蒸着している間に、他方の基板の搬入と新たな基板の搬入が可能となる。なお、図8(b)は、基板6Lを蒸着中で、基板6Rが処理受渡部9Rに搬入されたところを示す。   Next, an example in which the processing delivery unit 9 moves and processes in FIG. 8B will be described. In this case, the alignment unit 8 and the vapor deposition unit 7 are fixed. The processing delivery units 9R and 9L move together as a unit. The processing delivery units 9R and 9L may be structured to move individually to the left and right. In this example, the processing delivery part 9 moves, stands the substrate vertically, aligns and deposits. During the deposition, the other substrate can be carried in and a new substrate can be carried in. FIG. 8B shows that the substrate 6L is being deposited and the substrate 6R is carried into the processing delivery unit 9R.

従って、本2つの実施形態においても、簡単な構造で上面搬送ができ、上面搬送で基板に高精彩に蒸着すことができる。   Accordingly, also in the two embodiments, the upper surface can be transported with a simple structure, and the upper surface can be deposited with high definition on the substrate.

以上の実施形態において、基板を垂直に立てることを説明したが、蒸着部の構成によっては斜めでもよい。また、極端な例としては、上部から安定した蒸着した機構を用いれば、垂直に立てる必要もない。   In the above embodiment, it has been described that the substrate is set up vertically, but may be inclined depending on the configuration of the vapor deposition section. Moreover, as an extreme example, if a stable vapor deposition mechanism is used from the top, there is no need to stand upright.

また、以上の実施形態の説明においては、蒸着部7、アライメント部8及び処理受渡部9は同一真空チャンバに設けたが、チャンバ間の移動はゲートを介して行なうことで、蒸着部を処理チャンバに、アライメント部及び処理受渡部は搬送チャンバ等に設けることも可能である。   In the above description of the embodiment, the vapor deposition section 7, the alignment section 8, and the process delivery section 9 are provided in the same vacuum chamber, but the movement between the chambers is performed via a gate, so that the vapor deposition section is placed in the process chamber. In addition, the alignment unit and the processing delivery unit can be provided in a transfer chamber or the like.

さらに、以上の実施形態の説明においては、搬送系を真空内で構成したが、特許文献1に示すように真空の処理チャンバの前に真空外に設けられたスライド装置があり、処理チャンバの前でアームを伸縮させて基板を搬出入することが開示されている。このような装置においても、前記スライド装置、伸縮アーム、処理チャンバへの搬出入ロード部及び処理チャンバ内の処理受渡部から構成される搬送系に本発明を適用することが可能である。   Furthermore, in the above description of the embodiment, the transport system is configured in a vacuum. However, as shown in Patent Document 1, there is a slide device provided outside the vacuum in front of the vacuum processing chamber. It is disclosed that the arm is extended and retracted to carry the substrate in and out. Even in such an apparatus, the present invention can be applied to a transport system including the slide device, the telescopic arm, a loading / unloading load section to / from the processing chamber, and a processing delivery section in the processing chamber.

また、上記説明では有機ELデバイスを例に説明したが、有機ELデバイスと同じ背景にある蒸着処理をする成膜装置および成膜方法にも適用できる。   In the above description, the organic EL device has been described as an example. However, the present invention can also be applied to a film forming apparatus and a film forming method that perform vapor deposition processing in the same background as the organic EL device.

本発明の実施形態である有機ELデバイス製造装置を示す図である。It is a figure which shows the organic EL device manufacturing apparatus which is embodiment of this invention. 本発明の実施形態である搬送チャンバ2と処理チャンバ1の構成の概要を示す図である。It is a figure which shows the outline | summary of a structure of the conveyance chamber 2 and the processing chamber 1 which are embodiment of this invention. 本発明の実施形態である搬送チャンバと処理チャンバの構成の模式図と動作説明図である。It is the schematic diagram and operation | movement explanatory drawing of a structure of the conveyance chamber and processing chamber which are embodiment of this invention. シャドウマスクを示す図であるIt is a figure which shows a shadow mask. 本発明の実施形態である搬送機構を示す図である。It is a figure which shows the conveyance mechanism which is embodiment of this invention. 本発明の実施形態である処理チャンバ1の処理フローを示した図である。It is the figure which showed the processing flow of the processing chamber 1 which is embodiment of this invention. 基板を垂直に立てて蒸着する理由を説明する図である。It is a figure explaining the reason for carrying out vapor deposition with a substrate standing upright. (a):本発明の処理チャンバの第2の実施形態を示す図である。 (b) 本発明の処理チャンバの第3の実施形態を示す図である。(a): It is a figure which shows 2nd Embodiment of the processing chamber of this invention. (b) It is a figure which shows 3rd Embodiment of the processing chamber of this invention.

符号の説明Explanation of symbols

1:処理チャンバ 1bu:真空蒸着チャンバ
2:搬送チャンバ
3:ロードチャンバ 4:受渡室
5:搬送ロボット 6:基板
7:蒸着部 8:アライメント部
9:処理受渡部 10:ゲート弁
11:仕切り板 20:保持手段(粘着性ゴム)
31:ロード室 41:受渡室の基板保持部
81:シャドウマスク 71:蒸着源
100:有機ELデバイスの製造装置 A〜D:クラスタ。
1: Processing chamber 1bu: Vacuum deposition chamber 2: Transfer chamber 3: Load chamber 4: Delivery chamber 5: Transfer robot 6: Substrate 7: Deposition unit 8: Alignment unit 9: Processing transfer unit 10: Gate valve 11: Partition plate 20 : Holding means (adhesive rubber)
31: Load chamber 41: Substrate holder 81 in the delivery chamber 81: Shadow mask 71: Vapor deposition source 100: Organic EL device manufacturing apparatus AD: Cluster.

Claims (10)

基板を搬入する搬入ロード室と、蒸着材料を前記基板に蒸着する少なくとも1台の真空チャンバと、前記基板を搬出する搬出ロード室と、前記搬入ロード室から前記搬出ロード室へ前記基板を搬送する搬送機構を有する有機ELデバイス製造装置において、
前記搬送機構は、前記基板の蒸着面を上面にして搬送し、前記搬送機構のうち少なくとも前記基板を移動させる機構部には前記基板を保持する保持手段を有することを特徴とする有機ELデバイス製造装置。
A loading / unloading chamber for loading a substrate; at least one vacuum chamber for depositing a deposition material on the substrate; a loading / unloading chamber for unloading the substrate; and transferring the substrate from the loading / unloading chamber to the loading / unloading chamber. In an organic EL device manufacturing apparatus having a transport mechanism,
The transport mechanism is transported with the deposition surface of the substrate as an upper surface, and at least a mechanism portion of the transport mechanism that moves the substrate has a holding unit that holds the substrate. apparatus.
前記真空チャンバは前記基板を受渡しする処理受渡部と、前記処理受渡部には前記基板を蒸着する位置に移動させる基板面制御手段を有することを特徴とする請求項1に記載の有機ELデバイス製造装置。   The organic EL device manufacturing according to claim 1, wherein the vacuum chamber has a process delivery unit that delivers the substrate, and a substrate surface control unit that moves the substrate to a position where the substrate is deposited in the process delivery unit. apparatus. 前記基板面制御手段は前記基板面を略垂直に立てる手段であることを特徴とする請求項2に記載の有機ELデバイス製造装置。   3. The organic EL device manufacturing apparatus according to claim 2, wherein the substrate surface control means is means for standing the substrate surface substantially vertically. 前記保持手段は前記基板を移動させる機構部上面に設けられた粘着性ゴムであることを特徴とする請求項1または2に記載の有機ELデバイス製造装置。   The organic EL device manufacturing apparatus according to claim 1, wherein the holding unit is an adhesive rubber provided on an upper surface of a mechanism unit that moves the substrate. 前記真空チャンバは搬送機構を構成する搬送ハンドを有するロボットを有し、前記ハンドの上面に粘着性ゴムを設けたことを特徴とする請求項1に記載の有機ELデバイス製造装置。   2. The organic EL device manufacturing apparatus according to claim 1, wherein the vacuum chamber includes a robot having a transport hand constituting a transport mechanism, and adhesive rubber is provided on an upper surface of the hand. 基板を搬入ロード室から搬入させ、少なくとも1台の真空チャンバを介して、搬出ロード室へと搬送し、前記真空チャンバにおいて蒸着材料を前記基板に蒸着する有機ELデバイス製造方法において、
前記基板の蒸着面を上面にして搬送し、少なくとも前記基板を移動させる場合には前記基板の搬送面が摺動しないように保持することを特徴とする有機ELデバイス製造方法。
In the organic EL device manufacturing method in which the substrate is loaded from the loading load chamber, conveyed to the loading load chamber via at least one vacuum chamber, and vapor deposition material is deposited on the substrate in the vacuum chamber.
An organic EL device manufacturing method characterized in that the substrate is transported with the vapor deposition surface as an upper surface, and is held so that the transport surface of the substrate does not slide at least when the substrate is moved.
前記真空チャンバ内で前記基板を受渡し、その後前記基板を蒸着する位置に移動させることを特徴とする請求項6に記載の有機ELデバイス製造方法。   The organic EL device manufacturing method according to claim 6, wherein the substrate is delivered in the vacuum chamber and then moved to a position where the substrate is deposited. 前記基板を蒸着する位置へ移動は前記基板面を略垂直に立てることを特徴とする請求項7に記載の有機ELデバイス製造方法。   The organic EL device manufacturing method according to claim 7, wherein the movement to the position where the substrate is deposited erects the substrate surface substantially vertically. 基板を搬入する搬入ロード室と、蒸着材料を前記基板に蒸着する少なくとも1台の真空チャンバと、前記基板を搬出する搬出ロード室と、前記搬入ロード室から前記搬出ロード室へ前記基板を搬送する搬送機構を有する成膜装置において、
前記搬送機構は、前記基板の蒸着面を上面にして搬送し、前記搬送機構のうち少なくとも前記基板を移動させる機構部には前記基板を保持する保持手段を有することを特徴とする成膜装置。
A loading / unloading chamber for loading a substrate; at least one vacuum chamber for depositing a deposition material on the substrate; a loading / unloading chamber for unloading the substrate; and transferring the substrate from the loading / unloading chamber to the loading / unloading chamber. In a film forming apparatus having a transport mechanism,
The film forming apparatus, wherein the transport mechanism transports the deposition surface of the substrate as an upper surface, and at least a mechanism unit that moves the substrate of the transport mechanism includes a holding unit that holds the substrate.
基板を搬入ロード室から搬入させ、少なくとも1台の真空チャンバを介して、搬出ロード室へと搬送し、前記真空チャンバにおいて蒸着材料を前記基板に蒸着する成膜方法において、
前記基板の蒸着面を上面にして搬送し、少なくとも前記基板の移動する場合には前記基板の搬送面が摺動しないように保持することを特徴とする成膜方法。
In the film forming method of carrying a substrate from a loading load chamber, transporting the substrate to a loading load chamber via at least one vacuum chamber, and depositing a deposition material on the substrate in the vacuum chamber.
A film forming method characterized in that the substrate is transported with the deposition surface as an upper surface, and at least when the substrate is moved, the substrate is transported so that the transport surface does not slide.
JP2008227488A 2008-09-04 2008-09-04 ORGANIC EL DEVICE MANUFACTURING APPARATUS, ITS MANUFACTURING METHOD, FILM-FORMING APPARATUS, AND FILM-FORMING METHOD Expired - Fee Related JP4768001B2 (en)

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TW098126272A TWI424784B (en) 2008-09-04 2009-08-04 Organic electroluminescent device manufacturing apparatus, manufacturing method thereof, film forming apparatus and film forming method
TW102140479A TW201408133A (en) 2008-09-04 2009-08-04 Manufacturing device of organic el device and method of manufacturing organic el device and layer forming device and layer forming method
CN201110020657.0A CN102157708B (en) 2008-09-04 2009-08-17 Apparatus and method for manufacturing organic el device, and apparatus and method for forming film
CN2012103256735A CN102938447A (en) 2008-09-04 2009-08-17 Organic electroluminescent (EL) apparatus manufacturing installation
KR1020090075500A KR101119790B1 (en) 2008-09-04 2009-08-17 Manufacturing device of organic el device and method of manufacturing organic el device and layer forming device and layer forming method
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JP2010165571A (en) * 2009-01-16 2010-07-29 Hitachi High-Technologies Corp Apparatus for manufacturing organic el device, film-forming apparatus, and film-forming method thereof
JP2013001920A (en) * 2011-06-14 2013-01-07 Hitachi High-Technologies Corp Sputtering apparatus, film-forming apparatus using the same and film-forming method
JP2013171811A (en) * 2012-02-23 2013-09-02 Hitachi High-Technologies Corp Deposition device
JP2013206820A (en) * 2012-03-29 2013-10-07 Samsung Display Co Ltd Organic el device manufacturing apparatus and organic el device manufacturing method
JP2014101535A (en) * 2012-11-16 2014-06-05 Ulvac Japan Ltd Alignment mechanism of substrate processing device
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JP2010165571A (en) * 2009-01-16 2010-07-29 Hitachi High-Technologies Corp Apparatus for manufacturing organic el device, film-forming apparatus, and film-forming method thereof
JP2013001920A (en) * 2011-06-14 2013-01-07 Hitachi High-Technologies Corp Sputtering apparatus, film-forming apparatus using the same and film-forming method
JP2013171811A (en) * 2012-02-23 2013-09-02 Hitachi High-Technologies Corp Deposition device
JP2013206820A (en) * 2012-03-29 2013-10-07 Samsung Display Co Ltd Organic el device manufacturing apparatus and organic el device manufacturing method
JP2014101535A (en) * 2012-11-16 2014-06-05 Ulvac Japan Ltd Alignment mechanism of substrate processing device
KR20170007232A (en) 2014-05-16 2017-01-18 니혼 덴산 산쿄 가부시키가이샤 Hand for industrial robot and industrial robot

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