TW523837B - Resistor trimming with small uniform spot from solid-state UV laser - Google Patents

Abstract

A uniform laser spot, such as from an imaged shaped Gaussian-output (118) or a clipped Gaussian spot, that is less than 20 μm in diameter can be employed for both thin and thick film resistor trimming to substantially reduce microcracking. These spots can be generated in an ablative, nonthermal, UV laser wavelength to reduce the HAZ and/or shift in TCR.

Description

523837 A7 ___B7___ V. Description of the invention (/) Cross-reference to related applications. This patent application is derived from US Provisional Patent Application No. 60 / 266,172, filed on February 1, 2001, and in June 2001, Priority of US Provisional Patent Application No. 60/301706 filed on May 28. FIELD OF THE INVENTION The present invention relates to laser trimming techniques, and more particularly to laser trimming of thick or thin film resistors with uniform points derived from solid-state lasers. BACKGROUND OF THE INVENTION Conventional lasers are often used The system handles targets such as electrical impedances or conductive films of passive electronic component architecture, that is, thin film resistors, inductors, or capacitors in circuits constructed on ceramic or other substrates. Laser processing for microtrimming thin film resistors may include passive, functional or active laser microtrimming techniques such as those detailed in the text of U.S. Patent No. 5,685,995 by Sun et al. The background will be described below, but here only a thick film resistor is taken as an example. FIG. 1 is a perspective view of a workpiece 10, such as the thick film resistor 10a of the prior art, which can form part of a hybrid integrated circuit device, and FIG. 2 is a cross-sectional view depicting a conventional laser output pulse 12 receiving Thick film resistor 10a. Referring now to FIGS. 1 and 2, a conventional thick film resistor 10a generally includes a thick film layer 14 having a ruthenium salt or a ruthenium oxide material that extends therebetween and is deposited on a portion of the top surface of the metal contact 16. Here, the film layer 14 and the metal contact point 16 will be supported on a ceramic substrate 18 such as aluminum. 3 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read first Note on the back, please fill out this page again) 0 n ι_ϋ nnnn n- >, · nn i_i— nn ϋ n I '523837 A7 ____B7 ___—. —__ 5. Description of the invention (77). The current ruthenium-based thick-film paste has been optimized, and can be adjusted with a Nd: YLF laser or a Nd: YAG laser with a thickness of 1.047 microns (// m). Stay steady. Please pay special attention to Figure 1. The resistance of the resistor is a function of the resistivity of the resistor material and its geometry, including the length 22, the width 24, and the cylinder 26. Because it is not easy to select to accurately determine the tolerance error, the thick film resistor will be deliberately filtered to reduce the resistance below the nominal value, and trim it to the desired value. A plurality of resistors 10a having approximately the same resistance 値 are manufactured in a batch in a relatively large amount, and then a micro-repair operation is performed to remove the remaining increment of the resistor material until the resistance is increased to a desired number 値. With particular reference to FIG. 2, one or more laser pulses 12 can substantially remove the entire local size 26 ′ of the resistor material within the laser output pulse 12 light point dimension 28 and cover light point dimension 28 Form a cut 30. A simple or complicated pattern can be fine-tuned through the resistor material of the resistor 10a to fine-tune its resistance. Usually, a laser pulse 12 is applied until the resistor 10a meets a predetermined resistance 値. FIG. 3 is a perspective view of a part of the resistor 10 of the prior art. In the figure, two common pattern micro-repair paths ^ and 34 (separated by dashed lines) between two metal contact points 16 are shown. The "L-cut" path π describes a typical laser guided modification operation. In an L-cut path 32, the first removing strip 36 of the resistor material will be removed in a direction that is perpendicular to the straight line between the two contact points so as to be slightly adjusted to the resistor. Then, the second removing belt 38 adjacent to the first removing belt 36 can be removed to adjust the resistance 値 more carefully. "Snake-cut" path 34 traces: 0 ', ^ 乃 ~ 4 kinds of paper sizes Applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the precautions on the back before filling (This page) Order ---------- line 523837 A7 __ B7 —__— _ V. Description of the invention (5) Common laser adjustment operations. In the ~ snake-shaped path 34, the resistor material is removed along the strip 40 to increase the length of the thin film path 42. Here, the length of the removal tape 40 is increased until the desired resistance is obtained. The removal bands 36, 38, and 40 are usually a single cut of 30 degrees and represent a series of cumulative r micro-clamps of the laser pulse 12 ", which can remove almost all the resistors in the preset pattern器 材料。 Material. In this way, when the micro-repair operation is completed, the cutouts 30 will be “cleaned out”, and there is almost no resistor material at the bottom such as ^, so that the substrate 18 can be completely exposed. Unfortunately, to form a conventional clean cut 30, a slight laser attack on the surface of the substrate 18 will be required. As thin film resistors become smaller and smaller, such as the newer 0402 and 0201 chip resistors, smaller spot sizes will be required. Use i.〇47 // m and 1.064 "m laser wavelength to obtain smaller spot size, while using traditional optical elements and maintain standard working distance (to avoid ablation residue and to eliminate probes) With proper field depth (for example, ceramics are not flat), it will be an increasingly difficult challenge. The desire to obtain more accurate resistance 値 will also lead to tighter micro trim tolerance requirements. By Albin and Swenson The author, published in IEEE Transactions on parts, Hybirds, and Packaging, Vol · PHP-8, Νο · 2, June 1972, describes "Laser Resistance Trimming from the Measurement Pomt of View". Various measurement issues and advantages of micro-repairing thin-film resistors. Chapter 7 of the NEC Instruction Manual describes the challenges faced when micro-repairing resistors, especially thick-film resistors, using an infrared (IR) Gaussian beam. 5 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

-------- Order · ------- I 523837 A7 ___B7__ V. Description of Invention (f) War. Heat-affected areas (ΗAZ), chipping, and drifting are some of the issues that are targeted.

Swenson et al. IEEE Transactions on Components, Hybrids and Manufacturing

Technology, titled "Reducing Post Trim Drift of Thin Film Resistors by Optimizing YAG Laser Output Characteristics" In the second article, it describes the use of green light (532 nm) solid-state laser Gaussian output to fine-tune thin film resistors, reducing HAZ and later Minor repair drift.

US Patent Nos. 5,569,398, 5,685,995, and 5,808,272 owned by Sim and Swenson describe a method of applying non-traditional laser wavelengths, such as 1.3 #m, to micro-repair the film or device to avoid damage to the silicon substrate and / Or reduce the set-up time during the functional micro-repair process, by Sim and Swenson, published on August 12, 1999

International Publication, WO 99/40591 in the article, Bow [Introduces the idea of resistor trimming with ultraviolet (UV) Gauss laser output. Referring to Figure 4, UV Gaussian laser output can be used to ablate the area 44 on the surface of the thin film resistor to maintain their surface areas and retain their high frequency response characteristics. By intentionally maintaining the depth 46 of the resistor film in the micro-repaired area 44, these can avoid the need to clean the bottom portion 48 of the cutout and greatly eliminate the interaction between the laser output and the substrate 18, thereby Eliminate any issues that may arise from the interaction. Unfortunately, surface ablation micro-repair can be a fairly slow processing operation, because the laser parameters must be carefully decremented and controlled to avoid the complete removal of the resistor film. 6 National Paper Standard (CNS) A4 Specifications (21 × 297 mm) of this paper size " —- (Please read the precautions on the back before filling this page)

523837 A7 __B7_____ 5. Description of the Invention (f) Microfragmentation is another challenge related to the use of solid Gaussian laser beams for resistor trimming. Microcracking, which often occurs at the center of the cutout 30 on the substrate, or will extend into the reader film, causing potential drift problems. Microcracking can also cause drift results related to the resistive temperature coefficient (TCR). In the new type of 0402 and 0201 chip resistors made on a thinner substrate 18, compared to traditional resistors, the typical height or thickness is about 100 to 200 // m. This kind of micro-cracking problem More significant. Microcracking in these thinner substrate resistors can spread and cause catastrophic failure or even physical damage to the resistor during subsequent disposal, especially along the micro-trim cutout 30. Microfragmentation also produces "more probable" broken lines than the intended break in the broken line. Therefore, there is a need for an improved resistor trimming technique. [Summary of the Invention] Therefore, an object of the present invention is to provide an improved solid-state laser micro-repair system and / or method. Another object of the present invention is to provide a spot size of less than 20 / zm to fine-tune smaller chip resistors such as 0402 and 0201 chip resistors. Some micro-fractures are caused by the high intensity center of the Gaussian beam spot, which is similar to that in a laser drilling operation. The Gaussian beam may be responsible for damage to a blind spot center (although the target and the substrate may be different materials) ). Dunsky et al., International Publication WO00 / 73013, published on December 7, 2000, describes a Gaussian beam used to generate and use image configurations to provide a particular application for drilling operations. Uniform laser 7 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) Order --------- line A7 523837 _____ Β7 ____ V. Method of Invention (L) Light Spot.

Swenson, Sun and Dunsky in the International Symposium on Optical Seicence and Technology's 45th Anniversary Conference July 30-August 2000 titled "Laser Machining in Electronics Manufacturing: A Historical Overview" That is, a surface scanning improvement method using a 40 // m uniform light spot formed by the lens described by Dickey et al. In US Patent No. 5,864,430 is described. Preferably, the present invention uses a uniform light spot such as a Gaussian light spot or a cropped Gaussian light spot. The diameter of the light spot is less than 20 // m, and it can exceed the bottom of the cut 30. Uniform energy spreads up to minimize the amount and severity of microfracture. As appropriate, these light spots can be generated at an ablation, non-thermal UV laser wavelength to reduce HAZ and / or TCR drift. These technologies can be applied to the processing of thin or thick thin film resistors. / Other objects and advantages of the present invention will be apparent from the detailed description of the preferred embodiment of the present invention and the accompanying drawings. [Brief description of the drawings] Figure 1 is a partial perspective view of a thick film resistor; Figure 2 is a cross-sectional side view of a thick film resistor that receives a laser output, and the laser output can remove the entire thickness of the resistor material; Figure 3 is a partial perspective view of a resistor, showing two common micro-repair paths of the prior art; Figure 4 is a perspective view of a thick film resistor with a surface ablation micro-repair type 8 ^ Paper dimensions are applicable to Chinese national standards (CNS ) A4 specification (21〇X 297 public love) --- 1 (Please read the precautions on the back before filling this page)

523837 A7 ___B7 V. Description of the invention (1) Figure 5—Simplified side view and partial schematic diagram of an embodiment of a laser system for thin film repair according to the present invention; Figures 6A-6C are a series of simplified laser beams emitting light Type diagrams, but they can be changed due to various system components in the laser system of Fig. 5; Figs. 7A-7D are exemplary light-emitting pattern diagrams that are substantially uniform square or round; Under the typical laser processing parameters, according to a variety of typical transmission levels, for the Gaussian output and cropped Gaussian output of the image configuration, the ideal flow distribution comparison chart at the hole plane; Figure 9 is relative to the nominal image plane, Diagram of the channel cone fine ratio as a function of the position of the working surface; Figure 10 is a diagram of the diameter of the channel as a function of the position of the working surface relative to the nominal image plane; Figure 11 is an electron micrograph of the section, shown in Micro-fragmentation in the resistor substrate micro-repaired by a Gaussian beam; Figure 12 is a cut-away electron micrograph showing a substrate of a resistor micro-repaired by a uniform light spot, which does not constitute a significant No chipping 〇 [Element symbol description] 10 Work piece 10a Thick film resistor 12 Laser pulse 14 Thick film layer 9 This paper size applies to China National Standard (CNS) A4 specification (210 X 297 meals)-" " " " " (Please read the notes on the back before filling out this page) -------- Order --------- line 523837 A7 B7 V. Description of the invention (16 Metal contact point 18 Ceramic substrate 22 Length '24 Width 26 Height 28 Light spot dimension 30 Section 30a Section 32 Pattern minor repair path 34 Pattern minor repair path 36 First removal band 38 Second removal band 40 Removal band 42 Thin film path 44 Micro-repair area 46 Resistor film depth 48 Section bottom 50. Laser system 52 of the present invention, Q-switched, diode-type solid-state (SS) UV laser 54 laser pulse or output 56 Beam expander 58 Upgoing collimator lens element 60 Collimated light pulse 70 Shaping and / or imaging system 10 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the note on the back first (Please fill in this page for matters) 1AV -------- Order * -------- 523837 A7 __B7 V. Description of the invention) 72 Uniform pulse or output 74 Beam positioning system 80 -H4- Δρ: ί City description 1¾ kg 82 Laser target position 90 Optical element 92 Simplified light emission type 94 Shaped output 94b Shaped light emission Type 94a Shaped light emitting pattern 94c Shaped light emitting pattern 96 Simplified light emitting pattern 98 Hole mask 102 Simplified light emitting pattern 112 Collimator tube lens set 114 Laser system output 118 Shaping output 140 Microfracture 150a Significant width Cut edge (please read the precautions on the back before filling this page) [Detailed description of the preferred embodiment] Now refer to FIG. 5, which is a preferred embodiment of the laser system 50 of the present invention, which includes Q-switching, A diode-type solid state (SS) UV laser 52, which preferably contains a solid-state laser source, such as Nd: YAG, Nd: YLF, or Nd: YV04. The laser 52 is best to provide the main TEMoo space mode type, and the size is 355 nm (three times the frequency of Nd ·· 11) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ) A7 523837 ____B7___ 5. Explanation of the invention) YAG), 266 nm (Nd: YAG with four times the frequency) or 213 nm (Nd: YAG with five times the frequency), and the UV laser pulse produced by resonance Or output 54 is better. Those who are familiar with this technique do know that alternative wavelengths and their harmonics can be used depending on other laser sources. For example, preferred YLF wavelengths include 349 nm and 262 nm. Those familiar with this technique should also be aware that most lasers 52 do not emit perfect Gaussian output 54; however, for the sake of illustration, the Gaussian word 俾 is still used to describe the phenomenon of light emission of this Gaussian 54. For those who are familiar with this technique, laser cavity arrangement, harmonic generation and Q-switching operations are well known. Details of the exemplary laser 52 can be found in the International Publication WO 99/40591 by Sun and Swenson. Although other solid-state laser wavelengths can also be used, such as green light (such as 532 nm) or IR (such as 1.06 / zm or 1.32 // m), UV lasers are a better choice for repair operations. This is Because this one has ablative and relatively non-thermal properties, it can reduce the post-trim drift phenomenon. This UV laser wavelength can also implicitly provide a smaller spot size on the surface of the workpiece 10 than can be provided by an IR or green laser wavelength using the same field depth. The UV laser pulse 54 can be transmitted through various known optical elements, including, for example, a beam expander and / or upward collimator lens elements 56 and 58 placed along the beam path. Then, preferably, the uv laser pulse 54 is guided through a shaping and / or imaging system 70 to produce a uniform pulse or output 72, and then preferably directed to this by a beam positioning system 74, Order the uniform output 72 to be calibrated to a desired laser target position via a scanning lens 80 (this scanning lens is also commonly referred to as "second imaging", focusing, cutting or objective lens) 12 This paper size applies to China National Standard (CNS) A4 Specification (210 X 297 mm) ----- (Please read the precautions on the back before filling this page)

523837 A7 ____B7_____ V. Description of the invention ((() (Please read the precautions on the back before filling out this page) Place 82, here is the image of workpiece 10 such as thick film resistor 10a or thin film resistor On a plane, the uniform output 72 is preferably a laser output that includes cutting (cutting), focusing and dividing, shaping, or shaping and dividing. The imaging system 70 is preferably on the optical element 90. A hole mask 9 8 is preferably used between the collimator tube lens set 112 and at or near the focal point of the beam waist generated by the optical element 90. The hole mask 9 8 is preferably Block any unwanted side lobes in the beam to present a circular or other shaped light spot pattern, and then project it onto the surface of the workpiece. In addition, changing the hole size can control the sharp edge of the light spot pattern In order to produce a small, sharp-edged strength pattern, the calibration accuracy can be enhanced. At the same time, the hole shape can be a perfect circle, but it can also be changed to a square, oval, or other suitable for this resistor Non-circular shapes for minor repairs. • Line mask 98 may contain a material suitable for the wavelength of the laser output 54. If the laser output 54 is UV, the mask 98 may, for example, contain a UV reflective or UV absorbing material, but it is also preferred to Dielectric materials such as uv-grade fused silica, or sapphire coated with a multi-layer high UV reflective coating or other UV resistive coating. The holes of this mask 98 can be on the light storage side as required The optical element 90 may include a focusing optical element or a beam shaping element, such as an aspherical surface optical element, a refractive element, a polarizing element or a diffraction element. Optical element. Some or all of these elements can be used with or without hole mask 98. In a preferred embodiment, the beam shaping element contains a diffractive optical element (DOE), which can A highly efficient and accurate way to perform complex beam shaping tasks. The beam shaping element __ 13 paper ruler ^^ Chinese National Standard (CNS) A4 specification (210 X 297 public love)- -—-523837 a7 __B7____ 5. The description of the invention (丨 L) will not only show as shown in Figure 6A The light emitting pattern is converted into an approximately uniform light emitting pattern as shown in FIG. 6B, and the shaped output 94 can be focused to a predeterminable or specific light spot size. Here, the shaped light emitting pattern 94b and the preset are used. The light spot size is both designed to appear at a set distance Z0 downstream of the 90th line of the optical element. Although a single element DOE may be better, for those skilled in this art, it should be known that the DOE may include multiple Individual components, such as the phase plate and converter described in US Patent No. 5,864,430 owned by Dickey and others, also disclose various techniques for designing DOEs for beam shaping. Figures 6A-6C ( Figure 6) shows a series of simplified light emission patterns 92, 96, and 102 of the laser beam, which are shown when the person changes through various system components of the laser system 50. Figs. 6Ba-6Bc show simplified diagrams of the light emitting patterns 96a-96c of the shaped output 94 (94a, 94b, and 94c, respectively), which are a function of the distance z relative to ZQ '. Z0 'is the distance that the warped output 94 has the flattest light emitting pattern in the light emitting pattern 96b. In a preferred embodiment, the Z0, will be approximately equal to or equal to the distance Z0. Please refer to FIGS. 5 and 6. This is a preferred embodiment of a plastic imaging system 70, which includes one or more retro-beam shaping elements that can collimate parallel light with the original Gaussian light emitting pattern 92. Pulse 60, converted into a shaped (and focused) pulse or output 94b with an approximately uniform "top cover" pattern, or particularly a super-Gaussian light emission pattern, near the downside of the hole mask 98 of the beam shaping element . Fig. 6Ba shows an exemplary light emitting pattern 94a, where Z < ZG ', and Fig. 6Bc shows an exemplary light emitting pattern 9 乜, where z> 14 wood paper size is applicable to Chinese National Standard (CNS) A4 specification (210 X 297 Mm)-(Please read the notes on the back before filling this page) Order: • Line 523837 A7 ___B7__ V. Description of the invention (丨 >) z〇 '. In this embodiment, the lens 112 contains an imaging optical element adapted to repel a diffraction ring. For those skilled in the art, they should know whether to use a single imaging lens element or multiple lens elements. The pre-loaded shaping and imaging technology can be described in detail in International Publication WO 00/73013, published on December 7, 2000. Here, also incorporated in the application filed by Dunsky et al. On May 26, 2000 is the US Patent Application No. 09 / 580,396, which discloses relevant parts therein for reference herein. Figures 7A-7B (collectively referred to as Figure 7) show an example of a substantially uniform luminous pattern produced by a Gaussian beam propagating through a DOE, as described in the text of U.S. Patent No. 5,864,430. Figures 7A-7C show the cuboid light emission pattern, and Figure 7D shows the cylinder light emission pattern. The light-emitting pattern of Fig. 7C is "inverted" and shows a higher intensity at its edges than when it is directed toward the center. For those who are familiar with this technique, they should know that the beam shaping element 90 can be designed to supply or be suitable for a variety of other light-emitting types, and these light-emitting types will usually be based on their distance from ZQ ' Function. For those who are familiar with this technique, they should know the light emitting pattern of the cylinder, as shown in Figure 7D, which is better suited for circular holes 98; the light emitting pattern of rectangular parallelepiped is better suited for square holes; The properties of the beam shaping element 90 are adapted to the shapes of other holes. For example, ‘for many linear forward channel micro-repair applications, an inverted rectangular parallelepiped light pattern with square holes in the mask 98 may be used. The beam positioning system 74 preferably employs a conventional positioner for a laser micro-repair system. This positioning system 74 usually has one or more steps. 15 This paper size is applicable to China National Standard (CNS) A4 specifications (210 X 297 public love ㈣ a " (Please read the precautions on the back before filling this page).

523837 A7 ___ Β7_ 5. The description of the invention (/ Υ) moves the workpiece 10. The positioning system 74 can be used to move the laser light spot of the shaped output Π8 in an overlapping manner, and to form the cutout 30 along the micro-repair path 32 or 34. The preferred beam positioning system can be ESI Model 2300, Model 4370 or the upcoming Model 2370 "Laser Micro Repair System", which can be purchased from Electro Scientific Industries, Portland, Oregon, USA. It can be replaced by other positioning systems, and this is well known in the industry. An example of a laser positioning system 50 that is preferred and contains the above system components is a Model 5200 laser system manufactured by Electro Scientific Industries of Portland, Oregon, USA, or other series of UV lasers (355 nm or 266 nm). However, for those who are familiar with this technique, they should know that any other type with Gaussian beam intensity (before imaging or shaping as described above), other wavelengths such as IR, or lasers with different beam expansion factors can also be used. use. The laser system 50 is capable of generating a laser system output 114 with suitable parameters for a typical micro-transparent window of a resistor, which may include: ultraviolet wavelengths, preferably between 180-400 nm, above about 100 mw Average power density 'and preferably greater than 300 mW, spot size diameter or spatial major axis, about 5 to greater than about 50 // m, repetition rate, greater than about 1 kHz, and preferably greater than about 5 kHz or even greater than About 50 kHz, time pulse width, shorter than about 100 ns, and preferably from about 40-90 ns or less, a scan speed 'about 1-200 mm / sec or faster, preferably about 10- 10mm / sec, with 10-50 mm / sec as the optimal cut size, about 0-20m, preferably 0.1-10gm, and 0 · ΐ-5 / zm as good. The better parameters of the laser system output 114 can be selected to try to overcome the thermal properties of the substrate 18 16 The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before (Fill in this page) · -line- A7 523837 _____B7___ 5. Description of invention or other undesired damage. For those who are familiar with this technique, they should know that these output pulse parameters are independent of each other and specified according to the required performance. For those who are familiar with this technique, it should be known that the light spot area of the laser system output 114 will preferably be round or square. However, it is necessary to choose the appropriate optical element 90 and fit it in the mask 98. Hole shapes, while other simple shapes like ovals and rectangles are used, or even complex beam shapes. The preferred light spot area for laser micro-trimming, especially for UV laser micro-trimming, will preferably be less than about 40 / ^ m in diameter, and preferably less than about 20 // m in diameter, and Less than about 15 ^ m is best. For those who are familiar with this technique, it should be known that the size of the light spot output by the UV laser is smaller than that of the traditional laser micro-repair, and because the uniform output 72 allows the cut 30 to have a straight and uniform cut wall or The edge and thus a narrower HAZ, therefore, the resistor 10a can be trimmed to a tighter tolerance range compared to the possible tolerances of traditional cut-off micro-repair techniques. One difference between the Gaussian output 54 and the imaging shaping output 118 is that the pulse 94 can evenly illuminate the holes of the mask 98 at all points, while the Gaussian output 54 has a higher center Energy density, or "hot spots", which may increase microfragmentation and other undesired damage to the ceramic substrate 18. Therefore, the imaging shaping output 118 helps to form a cutout 30 with a very flat and uniform bottom 48 at or within the ceramic substrate 18, whereas the unmodified Gaussian output 54 cannot achieve this flatness With evenness. In addition, the imaging molding output 118 can also remove the resistor material more completely from the bottom edge of the cutout 30 without risking undesired damage to the ceramic substrate 18, This is because 17 (please read the notes on the back before filling this page).-The paper size of the thread is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)-!-A7 523837 ____B7______ 5. Description of the invention ( / ') The uniform shape of the pulse 94 has almost eliminated the possibility of generating a hot spot at the bottom center of the cutout 30, thereby minimizing the amount and severity of microfracture. Moreover, it can also be obtained by using the unmodified Gaussian output 54: the obtained micro-repair speed can be improved by the imaging shaping output 118. Since the potential "hot spot" damage can be avoided, the imaging shaping output 118 can be applied at a higher laser power than the Gaussian output, so the cut size, repetition rate, and beam movement can be advantageously adjusted Speed 俾 for faster fine-tuning. Here, although the cropped Gaussian light point can be used to be superior to the Gaussian output 54, it does require significantly more energy than the imaging shaping output 118 to achieve the desired uniformity. Compared with the cropped Gaussian output, the image forming output 118 can also provide a cleaner bottom edge and faster repair speed. Fig. 8 shows a comparison chart of the ideal flow pattern at the plane of the hole according to a variety of exemplary transmission levels for the typical output 94b and the cut Gaussian output under typical laser processing parameters. The flow level on the workpiece 10 will be equal to the hole flow level multiplied by the square of the imaging liberation factor. That is, for example, for the shaping output 94b and the cut Gaussian output, the flow rates at the edge of the hole will be about 1.05 Joules / cm2 and 0.60 Joules / cm2 or less, respectively. In this way, at the workpiece 10, for the imaging shaping output Π8 and the cropped Gaussian output, the flow rate at the edge of the imaging light spot (cut edge) is approximately 7.4 and 4.3 J / cm. The rate at which typical resistor materials can be burned in will generally vary between the center and edge flow levels. Therefore, the imaging shaping output 118 can be used to complete each section 30 by 18 with fewer pulses, faster scanning speeds, or with a larger cutting size (or smaller laser overlay). t The paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm)--n I 111 An-I n §it— nnn · ϋ n (Please read the precautions on the back before filling this page).- Line A7 523837 ______ B7 ^ ___ 5. Description of the invention ('7) Processing operation, thereby increasing processing yield. An example of a strategy for using the imaging shaping output 118 for micro-repairing according to various considerations of the present invention can be described later. The flow rate across the entire imaging light spot can be maintained at, for example, 90% of the amount where unacceptable ceramic penetration or damage occurs. For example, acceptable ceramic penetration into this thick film resistor is usually less than 10 / zm, and preferably less than 5 / zm. The resistor material is then ablated without causing damage such as significant microcracking. In contrast, with a cropped Gaussian output of T = 50%, the center of the light spot can be maintained at this flow. In this case, the edge will only have 45% Fdamage. Or another ’, the edge of the light spot is maintained at 90% Fdamage. In this case, the central point is about 180% of the damage threshold flow, causing substantial harm. The edge of the imaging spot is maintained at a local flow. Because more material can be removed from each pulse, the resistor material can be removed from the edge of the cut by fewer laser pulses. Therefore, the micro-repair output of the imaging shaping output 118 will be much higher than the cropped Gaussian output. In addition to being able to remove the resistor material from the bottom edge of the cutout 30 at a faster speed as described above, the imaging molding output 118 can also remove the resistor material more completely from the bottom edge of the cutout 30. Without the risk of damaging the bottom ceramic ceramic substrate 18, because the uniform shape of the pulse 94 can almost eliminate the possibility of hot spots at the bottom center of the cut 30. Regarding the quality of the cut, the imaging molding of the present invention Output 118 also provides extremely precise laser spot geometry and can provide better cone minimization at a higher output rate than Gaussian or cropped Gaussian output. _____ 19 This paper is for China National Standard (CNS) A4 Specification ⑽x 297 Meal 1-«n nv nn Λ— nn IV— nmn I— I · nn (Please read the precautions on the back before filling this page) · -line 523837 A7 __ B7____ 5 Inventive (if) can provide a sharper edge with a higher Gaussian output 54. The more uniform the energy on the bottom of the cut 30 and the more precise the edges are, the more predictable micro-retouch results will be provided including enhanced repeatability and correct positioning of smaller target areas. . Figure 9 shows the ratio of the width of the bottom of the cut to the width of the top of the cut as a function of the position of the working surface relative to the nominal image plane, i.e. z = 0. According to Fig. 9, the nominal image plane is the position where the cutout 30 is most distant from the micro-point, which is the most sharply defined top edge. The positive z of z indicates a plane lower than the image plane of the title, that is, the distance that the workpiece 10 is placed from the optical element of the system will be farther than the separation distance of z = 0. The 3σ error bar shown in the figure is for reference, because it is not easy to reliably measure the width of the bottom. The largest bottom / top ratio will be the one obtained on the image plane with ζ = 0. Throughout the range of a 400 / zm, this bottom / top ratio 値 will always be higher than 75% at high throughput. Figure 10 shows the width of the cutout as a function of the surface position of the sheet relative to the nominal image plane at z = 0. When the workpiece 10 is moved further above the nominal image plane, the average width of the top of the section will steadily increase. For locations below z = 0, the top width will remain fairly fixed 400 / m below the image plane. Except for z = +300 // m and z = -300 // m, the 3σ width is generally kept within d: 3 / zm of the average 値. In contrast, for the width of the bottom, the average chirp continues to decrease from a higher position to a position below the nominal image plane. Since the width of the bottom of the cutout is significantly more difficult to control than the size of the top of the cutout, the bottom width shown in this figure is for reference only. Therefore, it can be applied to the laser system 20 $ Paper size Applicable to China National Standard (CNS) A4 specification (210 X 297 public love) '-β 0 HI n I n Λ · 1 n 1 »· I ni: 1 I · an 1 (Please read the notes on the back before filling out this page) Order · Line A7 523837 ___B7_ V. Description of the Invention (if) The statistical processing control technology of 50 will be suitable for the features at the top of this section. The data in Figures 9 and 10 list a number of suggested ways to manage the depth of focus items for handling robustness. If you want to maintain a constant width of the top of the cut under varying material thickness and processing conditions, it is best to set the processing program slightly below the nominal image plane ', such as z. + 2〇〇, can be beneficial. This creates a z 値 variation area of 200 m, which can be accommodated with only a slight impact on the diameter of the top. However, on the other side, if it is more desirable to maintain a constant cut bottom / top ratio, it is best to set the processing program so that the workpiece 10 is located exactly at the nominal image plane. In this way, it can be ensured that the bottom / top ratio of the section does not decrease by more than 5% in the range of at least ± 200 // 111 / 値. The availability of these methods depends on whether the other cutting features remain within acceptable limits when the workpiece 10 is moved away from the image plane of the item. In addition, each beam shaping element 90 may be selected to generate a pulse having an inverted light emitting pattern as shown in FIG. 7, which is cut out of the dotted line 130 to facilitate movement along the outer edge of the cutout 30. Remove the resistor material and use this to further improve the microtip. The present invention can provide a micro-tip ratio higher than 80% without causing undesired damage to the ceramic substrate 18, and can also be higher than 95% micro-tip ratio (for low aspect ratio). Section 30) without causing undesired damage to the ceramic substrate 18. For the smallest cut width of the deepest cut 30, the width at the top of the cut is about 5-18 / zm, and according to the traditional optics, it is likely to be better than 75% of the micro-tip ratio. Although in addition to the range that will affect the width of the small resistor 10a, the micro-tip ratio is usually not a key consideration in many micro-repair operations. However, the present invention can achieve 21 ^ paper size applicable to China Standard (CNS) A4 specification (210 x 297 public love ^ '-(Please read the precautions on the back before filling out this page). · -Line A7 523837 _________B7________ 5. The high micro-tip ratio of the invention description (^), It is indeed further evidence of the uniformity of the bottom of the cut. I nn 1 r— I »n If u ϋ nn I n (Please read the precautions on the back before filling this page)-The micro-revision technique disclosed in this article is applicable For thin or thick film resistor processing applications, that is, as described in any of the reference documents compiled in section B of the background of the invention, including some deep micro-repair operations. For thick film resistors, especially in Ruthenium dioxide on ceramic materials, including 0402 and 0201 chip resistors with ruthenium dioxide thinner than 200 // m in height or thickness, will invade the ceramic in order to remove all ruthenium in the cutout 30 Minimum penetration of substrate 18 Evaluation criteria for better micro-repair work. These desired cuts 30 will be clean, so that the ceramic material will be exposed uniformly, and the bottom of the cut 30 will be "white." This clean operation is often accompanied by intentional Sexual shoots penetrate into the ceramic material to a depth of about 0 · 1-5 // m, usually at least 1 // m. The imaging shaping output 118 can provide these clean or white cuts 30 without Causes significant micro-fragmentation problems. UV will be particularly suitable for processing resistor materials on ceramics; however, other wavelengths can be used. Here, although UV wavelengths can be used, but IR wavelengths, especially according to 1.32 // m, for the use of uniform light spot to perform micro-repair operations on materials such as NiCr, SiCI: or TaN on silicon substrates, especially for micro-remediation of active or electro-optical devices and the functionality involved For the application of repair work, this one is indeed a better wavelength. For those who are familiar with this technology, you should know that the uniform light spot micro-repair technology of this disclosure can be applied to a single resistor, resistor array (including other Those on the folding plate), voltage adjustment Device, capacitor, inductor, or any other device that requires micro-repair work. In addition, this uniform light spot micro-repair technology is applicable ____ 22 This paper size applies to Chinese National Standard (CNS) A4; X 297 public love ^ -------- 523837 a7------- B7 _______-_ V. Description of the invention) In which the imaging® type output 118 does not need to penetrate the surface of the substrate 18 to perform ablative micro-repair work or other Applications, and applications that need to penetrate the substrate. Figures 11 and 12 are electron micrographs showing the resistor 10a (Figure 11) micro-trimmed by a UV Gaussian beam and the resistor 10a (Figure 12) micro-trimmed by a UV uniform (imaging) beam ) The microfragmentation difference between the two. According to the dream in Figure 11, the resistor 10a previously had an average power of 0_6 W, a repetition rate of 14.29 kHz, a trimming speed of 30 mm / sec, and a UV Gaussian output with a cut-off size of 2.10 m 54 minor repairs. The resulting cut 30a can exhibit various micro-cracks, such as a significant micro-crack 140, a significant width of the cut edge 150a ', and penetrate deeply into the ceramic substrate 18 at the center of the cut 30a. Referring now to FIG. 12, the resistor i0a has an average output power of 2.86 W, a repetition rate of 8 kHz, and a cut-off size of 4 // m of the UV imaging molding output at a fine repair speed of 32mm / sec. us repaired slightly. The resulting cut 30b did not show undesired damage, and even if it did, it was only slightly fragmented. The cutting edge 150b is rather narrow, and the significant penetration is shallow and almost uniform. For those skilled in the art, it should be apparent that various changes in the details of the previously disclosed embodiments of the present invention can be undertaken without departing from its basic principles. Therefore, the scope of the present invention should only be defined by the scope of patent applications set out below. 23 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) Please read-read back

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Claims (1)

523837 A8 B8 C8 D8 patent application scope. ~ A method of laser trimming film resistors' to change from the initial number to the nominal number, the nominal number is a package containing ~ The parameter of the resistor of the Yue Wu resistor material, and the film resistor material can be used to determine the initial number of the parameter, the method includes: "generating a Gaussian beam of laser pulses of at least one UV radiation, this radiation has Is a Gaussian shaped energy density space shape; the Gaussian beam is propagated along an optical path to transform the Gaussian beam into a beam with a substantially substantially uniform spatial shape through a beam shaping element ; 〃 propagate the main age of the converted shot, pass through a hole to make its surface into a target view, whose energy density of Yan Youzhen = target light spot with a shape; and = guide the target beam Towards the target area of the film resistor to ablate the film resistor material in the target area of the resistor, 俾 change its initial g 为 to a nominal number 値, and penetrate into the substrate to penetrate the film resistor materialTo form a cut, and expose the main part of the substrate uniformly in the target area. The substantially uniform energy density space shape of the target light spot has an effective energy density 値, which can form micro-fractures in the substrate. The situation is minimized. 2. The method according to item 1 of the patent application range, wherein the substrate is penetrated to a depth of less than 10 m. 3. The method according to item i of the patent application, wherein the substrate is penetrated to a depth of at least 0.1. 4 · If the method of applying for the third item of the patent scope, where the substrate is worn (please read the precautions on the back before writing this page),-· & thread paper size is applicable to China g standard (cns) A4 Specifications (21〇x2 ^^ · 523837 6 · Ceramic materials such as the method of applying for the scope of the patent No.5. 7 · As the method of the scope of applying for the patents No.1, a 0402 or 0201 chip resistor. The method of item 3, a 0402 or 0201 chip resistor. 9. If the method of item 1 of the scope of patent application, A8 B8 C8 __ D8 ^ ~ ^ ^ ---------- 6. The scope of patent application is transparent to one Depth of less than 5 // m. 5. As described in the method of item _ 丨, the material of the rectifying film includes a thick film resistor material containing ruthenium dioxide. The substrate includes a resistor including the resistor. The resistor comprises a substrate comprising a ceramic material and the thin film resistor material comprises a thin film resistor device. 10. The method according to item 9 of the patent application scope, wherein the thin film resistor material comprises a nickel chromate compound or a nitrogen Tantalum compounds 11. If applying for a patent The method of item 1, wherein the thin film resistor material composes S in a plurality of resistor film materials of a similar range, and the stomach # are mutually spaced apart from each other, and are supported on a substrate, and are composed of The engraved lines in the substrate are isolated to separate the plurality of similar ranges; each of the plurality of similar range of thin film materials has opposite ends disposed between the metal conductors; and the target light The substantially uniform sentence energy density space shape of the dots has an effective energy density 可, which can minimize the size and depth formation of ^ 2 in the substrate, which will cause the substrate to be different from the engraved lines. I I2. The method according to item 1 of the scope of patent application, wherein the cutout has a bottom center, and the target light spot is substantially uniform in energy density space shape __ 2 This paper is suitable for a scale of $ " ^ National Standard (CNS) A4 Specification (21〇χ 297 公 爱) — ^ (Please read the precautions on the back before writing this page) 523837 SI VI. The patent application Fanyuan has an effective energy density 値, which can minimize the micro-fracture formation in the substrate at the center of the bottom of the section. u. The method according to item i in the scope of the patent application, wherein the substantially uniform buckling point space pattern of the target light spot has an effective energy density 値, which can make the size and depth of the microfracture in the substrate or the thin film material The composition of is minimized, and these will cause the parameter 値 to drift away from the nominal 値. H. The method according to item 1 of the patent application park, wherein the cutout has a depth of at least 100 m and a side wall that can exhibit at least a% micro-tip ratio at the highest yield. 15. The method of claim 1, wherein the target light spot having a substantially uniform energy density spatial shape has a major axis shorter than or equal to 20 β m. 16. The method according to item 1 of the patent application scope, further comprising: generating a Gaussian beam from a Q-switched, diode-pumped (DP) -type solid-state (SS) laser. 17. The method of claim 1 in which the Gaussian beam shaping element contains a diffractive optical element. 18. The method of claim 1, wherein the Gaussian beam contains a wavelength of about 355 nm, 349 nm, 266 nm, or 262 nm. 19. The method according to item 1 of the scope of patent application, wherein the Gaussian beam has an energy, and the target beam has a hole shaping energy greater than 50% of the energy of the Gaussian beam. 20. The method according to the first item of the patent application, wherein the hole has a square shape. 3 This paper size It is a family of fresh food (CNS) A4 »C 297g g (Please read the precautions on the back before writing this page), 0 098895 ABCD 523837 6. Application for patent scope 21 — a kind of The method of changing 为 to the nominal number 値 has long-term stability. It is a parameter of a microelectronic circuit element containing a range of thin fe materials erected on a substrate, and the range defines a volume space. To determine the initial chirp of the parameter, the method includes: generating a laser beam having an energy density spatial shape that is substantially Gaussian; transforming the laser beam having the energy density spatial shape into a material having a substantial A target beam with a target light spot of uniform energy density space shape; and directing the target beam toward a range of the thin film material to ablate a quantity of the thin film material, thereby changing its initial number to a nominal number値, the substantially uniform energy density space shape of the target light spot has an effective energy density 値, and the size and depth of the micro-fracture in the substrate or the film material can be opened. Xicheng 丨 Stomach condition is minimized, which will cause an approximate broken line in the substrate. 22. The method of claim 1, wherein the substrate comprises a ceramic material and the thin film material comprises a thick film resistor material. 23. The method of claim 22 in the scope of patent application, wherein the thick film resistor material includes a nail. 24. The method of claim 21, wherein the substrate comprises a ceramic material and the film material comprises a thin film resistor material. 25. The method of claim 24, wherein the thin film resistor material comprises a nickel chromate compound or a nitrided macro compound. 2 6 · The method according to item 21 of the patent scope, wherein the film material range constitutes one of a plurality of similar range of thin film materials, which are 4 to each other. This paper size is applicable to China National Standard (CNS) A4 specifications ( 210 x 297 mm) ^ --- (Please read the precautions on the back before writing this page), speech line Λ 523837 SI-_---- VI. The scope of patent application is separated and supported by The substrate, and each of the plurality of films of similar range has opposite ends disposed between the metal conductors. Aniseed 27. The method according to item 26 of the scope of patent application, wherein the film materials of the plurality of types are separated by the engraved lines in the substrate. 28. The method according to item 26 of the application, wherein the substrate package + a ceramic material, and the thin film material comprises a thick film resistor material. ^ § 29. If the method of claim 21 is applied, the film material surrounds the elements that form an array of multiple electrical interconnection elements, and further includes a multiple array of $ electrical interconnection elements. The arrays are spaced from each other and are supported on the substrate. 30. The method according to item 29 of the patent application, wherein the multiple arrays of the plurality of electrical interconnection elements are separated by a scribe line in the substrate. 31. If the method according to item 21 of the patent application, wherein the microelectronic element is a resistor, the parameter is resistance 値, and the substrate includes a ceramic material. 32. If the method according to item 21 of the patent application, which has The target light spot with a substantially uniform energy density spatial shape has a major axis shorter than or equal to 20 // m. 33. The method of claim 21, further comprising: generating a 1¾ beam from a Q-switched, diode-pumped (DP) -type solid-state (SS) laser. 34. The method of claim 21, wherein transforming a Gaussian beam into a target beam includes transmitting the beam through a hole mask for cutting a peripheral portion of the Gaussian beam. 5 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) f! (Please read the precautions on the back before writing this page) 、 -line 523837 A8 B8 C8 D8 6. Scope of patent application 35. The method of claim 34, wherein converting the laser beam into a target beam includes transmitting the beam through a beam shaping element placed upstream of the hole mask, Take the laser beam; shape the line. 36. The method of claim 3 of item 5 in the patent application, wherein the beam shaping element includes a diffractive optical element. 37. The method of claim 36, wherein converting the laser beam into a target beam includes transmitting the beam through a focusing element placed upstream of the hole mask to The laser beam is shaped. 38. For example, the method of claim 21 in the patent application range, wherein the substantially uniform energy density space shape of the target light spot has an effective energy density 値, which can make the inside of the substrate or the film material The composition of the size and depth of the microfractures is minimized, and it will cause the parameter 値 to drift away from the number of heads 値. 39. The method of claim 21, wherein the microelectronic device includes a 0402 or 0201 chip resistor. 40. The method of claim 21, wherein the substrate is penetrated to a depth of less than 10Vm. 41. The method according to item 40 of the patent application, further comprising: forming a notch, and the substrate at the bottom of the notch will be uniformly exposed. 42. The method according to item 21 of the patent application scope, wherein the substrate is penetrated to a depth of at least 0.1 // m. 43. If the method of applying for the scope of the patent No. 21, in which the substrate will be 6 paper sizes applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the precautions on the back before filling this page) 1T ·· Line 523837 A8 B8 C8 D8 VI. Patent application scope penetrates to a depth of less than 5 // m. (Please read the precautions on the back before filling this page) 44. For the method of applying for the scope of patent application No. 21, which converts the laser beam into a target beam, including transmitting the beam through a beam shape element. 45. The method of claim 21, wherein the laser beam includes a UV wavelength. 46. The method of claim 35, wherein the laser beam includes an IR wavelength. 47. The method of claim 46, wherein the target light spot contains a wavelength of 1.32 and the substrate contains silicon. 48. The method of claim 21 in which only the top volume of the volume space of the thin film material is ablated, so that the substrate remains unexposed. 49. The method of claim 35, wherein the laser beam includes a wavelength of visible light. 50. The method of claim 21, wherein the microelectronic component includes a capacitor or an inductor. 7 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)