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TW477000B - Dual damascene bond pad structure for lowering stress and allowing circuitry under pads and a process to form same - Google Patents

Dual damascene bond pad structure for lowering stress and allowing circuitry under pads and a process to form same Download PDF

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Publication number
TW477000B
TW477000B TW089126837A TW89126837A TW477000B TW 477000 B TW477000 B TW 477000B TW 089126837 A TW089126837 A TW 089126837A TW 89126837 A TW89126837 A TW 89126837A TW 477000 B TW477000 B TW 477000B
Authority
TW
Taiwan
Prior art keywords
film
pad
barrier layer
semiconductor device
patent application
Prior art date
Application number
TW089126837A
Other languages
English (en)
Inventor
Sailesh Chittipeddi
William Thomas Cochran
Yehuda Smooha
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/465,089 external-priority patent/US6838769B1/en
Priority claimed from US09/465,075 external-priority patent/US6417087B1/en
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Application granted granted Critical
Publication of TW477000B publication Critical patent/TW477000B/zh

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Description

經濟部智慧財產局員工消費合作社印製 "T/ /υυυ 、發明說明（1) t盟領域 本發明大體上和積體電路的领 積體電路的製程、和具有 有效’且特別是和形成 塾之下的積體電路有關。'有'路的—部分位於銲接 登明背景 當今天的㈣半導體處〜 更高的整合声产眭A人， 丁仕積把％路裝置當中 的芙〜+二元王地利用積體電路裝置產生於其上 也；：：：：=，越來越重要。-積體電路裝置 I 其疋當它仍然包含在形成於其上的半導 體基體中時。晶片 干等 積體電路哲署、彳 王要疋，由組合以形成—完成的 個別裝置的密度和數目所決定。藉由使晶 2到取小或減小，更多晶片可建立在_固定大小的 土田中，而產生成本因而減少。 _每-積體電路裝置包括許多銲接塾，其用來提供對外部 =、的1氣連接。更具體地説，在—所裝配的積體電路封 <外郅接腳和積體電路本身之間的那些電氣連接，是經 由通常位於晶片的表面上之銲接墊完成。銲接墊是電氣連 接到、、且6以形成積體電路、穿透緩衝區、和其他電氣傳導 相L接的大批個別裝置之金屬區域。由於用來將外部導 Ί k接到#接塾的傳統銲接技術，以及由於設計的束縛， 田相較於上列如電晶體或組合以形成積體電路裝置的其他個 別裝置之其他特徵時，銲接墊有相對大的尺寸。因此，鲜-接墊佔據或涵蓋晶片表面的一重大部分。在銲接墊下面的 區域因此佔據包含晶片之基體的表面之一可觀的部分。慣 -4-
权紙張尺庶·中國國家標準（CNS):規心210 X 297TIT --------^---------^___w (請先閱讀背面之注意事項再填寫本頁) 五 發明說明（2 ) 例上，用來形成那些銲接墊的區域， 音 用來形成積體電路的其他裝置之區域爲ϋ因= ::产在鲜接!之下提供有效裝置，增加積體電路装= 合έι度且可月匕也允坪一減小的晶片尺寸。 在封裝和銲接墊之間的電氣連接需要實體 電氣傳導係數。用來將封裝的—外部線 ^ 鲜接f之傳統銲接處理，通常不是需要昇高的溫m ’就疋，者都需要，以及超音波能量。這些效應是要在 接塾和高實體完整性與低電阻的外部線之間產生_連接所 需要的）然& ’用以將線連接到銲接墊的這些條件，可能 在銲接塾通常形成於其上的介質薄膜上造成瑕^ 月匕 銲接塾傳統上形成在介質材料上，以電氣隔絕鋒接轨全 屬與基體、和與可能形成在那些銲接墊之下的其他電氣裝 置。用來將外部線連接到銲接墊的傳統方法之情況，可能 在銲接塾之下所形成的介質薄膜中產生機械應力。科、 力可能引起瑕疵，其可能造成漏戍電流通過在銲接執、和 其下面時常是導電的基體、與如果形成在那些銲接墊之下 的其他裝置之間所形成的介質。同樣地，使用傳統的處理 技術，這些漏洩電流妨礙將那些有效裝置合併在銲接墊之 下。這個限制降低了整合的層度和基體空間對裝置用途的
有效使用J 已經有嘗試使用在銲接墊下面的基體區域作爲有效裝置 的用途。已使用傳統的線銲接技術進行嘗試。舉例來説， 給奇提裴帝（Chittipeddi)等人的美國請准專利權第5,751，〇65 -5- A7 ~~2Z____ 五、發明說明（3 ) 虎揭路在形成於銲接墊之下的介質之下提供一額外的金 ^以便使基體和形成於銲接塾之下的其他裝置之上的 銲接製程之應力效應減到最小。金屬是有延展性的且動作 $消除應力。這技術使用額外的金屬層，然而，需要針對 =澱和成形金屬薄膜以便產生修改的銲接墊結構之處理步 I的一頭外程序。這些額外的處理步驟耗費時間並增加積 體電路的生產之生產和材料成本。 本發明處理先前技術的缺點，並提供一種新奇的裝置和 用以形成一銲接墊結構的製程，其允許在銲接墊之下的區 戈仪^:效裝置利用。孩製程不需要針對配合使用傳統的線 銲接技術所產生的那些應力之獨立的金屬薄膜之形成。 發明概要 j、、本發明，雙鑲肷銲接蟄結構形成在一積體電路裝 置當中的有效裝置上。銲接墊開口的上面部分包括由一障 :層薄膜所形成的一下方表面、和多個延伸穿過障壁層薄 膜和穿過在障壁層下的介質薄膜之穿透洞。銲接墊由^屬 形成，而牙透洞提供在銲接墊金屬和其他特徵，有些是在 銲接墊之下形成的有效裝置，之間的電氣連接。 依照本發明的另一態樣，一雙鑲嵌銲接墊結構形成在一 積體電路裝置當中的有效裝置上。銲接塾開口的上面部分 包括由一肆壁層薄膜所形成的一下方表面、和多個延伸穿 過障壁層薄膜和穿過在障壁層下的介質薄膜之穿透洞。銲 接墊由金屬形成，而穿透洞提供在銲接墊金屬和其他特徵 ，有些疋在銲接墊之下形成的有效裝置，之間的電氣連接。 經濟部智慧財產局員工消費合作社印製 477000 五、發明說明（4 ) i式概述 曰本發明當結合伴隨的圖式閱讀時，⑼下列詳細的描述可 二好的了解。強調的是，依照一般實務，圖式的各種特徵 =不依比例的。相反地，各種特徵的大小爲了清楚之故任 意地放大或縮小。包含在圖式中的是下列圖形： 圖1疋依狀本發明銲接墊結構的一可仿效具體實施例之 面圖； 圖2是依照本發明銲接墊結構的另一可仿效具體實施例之 斷面圖； 圖3$依照本發明的銲接墊之平面圖；和 /4A-4M是用來形成本發明的可仿效具體實施例之處理 操作的各種程序之斷面圖。 發明詳述 圖1是表示本發明的銲接墊結構之一斷面圖。銲接墊27 形成在基體1上所形成的銲接墊區域40當中。在銲接^區 域40當中和在錦接墊27之下，可形成例如電晶體7的= 裝置。 更特別地，圖1展示形成在基體丨上銲接墊區域4〇告中的 銲接墊27。基體i可能是半導體裝置和積體電路形^於其 上的任何適當基體。在一可仿效的具體實施例中，基體^ 能是一矽疊圓。銲接墊27由金屬薄膜形成。金屬薄膜I? 可能是在一積體電路當中當作一傳導薄膜使用的任何適去- 金屬薄膜。此種傳導薄膜的範例包括鎢、 I田 & 硐和冗們的 泛至例如AlCuSi。在其他可仿效的具體實施例 K紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐 I I I ·1111111 . —------- (請先閱讀背面之注意事項再填寫本頁) 五、發明說明（5 ) 2屬薄膜17可能是-合成薄膜，包括上面所描述的金屬 薄膜中〈一種和例如一障壁層薄膜的另一薄膜。 、θ接土 7匕括下方表面14，其由一障壁層薄膜形成。 在圖1所顯7F的具體實施例中，障壁層薄膜i 3也向週邊地 申超過銲接塾區域4G。銲接塾27的頂端表面基本上與 、方J貝薄膜15的頂端表面23共平面，銲接墊開口 形成 :其當中。在障壁層13之下是下方介質薄膜11，其通常使 銲接墊27與傳導薄膜5和可能形成在銲接墊27之下且在銲 ，塾區域4G當中的其他有效裝置隔離。在可仿效的具體實 犯例t ’、穿透洞19(以下稱爲”穿透孔”）提供銲接塾27和傳 導薄膜5之間的直接電氣連接。在各種具體實施例中，傳導 薄膜5可能是-可模製的金屬薄膜例如銘或銅，—複晶石夕或 其他半導體薄膜，或—模製的半導體薄膜。在-可仿效的 具體實施例中，傳導薄膜5可能是例如AlCuSi或另—銘或銅 合金的一模製的金屬合金薄膜。 金屬薄膜17包含在形成於上方介質薄膜15當中的開口 當中。、在銲接墊27和傳導薄膜5之間的電氣連接，藉由穿 過形成銲接墊的底部表面14之障壁層薄膜13、和穿過下方 介質薄膜11的穿透孔19提供。開口 2〇和穿透孔19 一起形 成一雙鑲嵌結構。在圖i中所顯示可仿效的具體實施例中傳 導薄膜5L藉由形成在絕緣薄膜3中的觸點9之方法，進一 步地連接到形成在基體!上銲接墊區域4〇當中的電晶體7。 在其他可仿效的具體實施例中，傳導薄膜5可能額外地或替 代地側向連接到未包含在銲接墊區域4〇當中的其他裝置。 本紙張尺度適用中國國家標準
(CNS)A4 規格（210 X 297公釐） 477000 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（6 ) 雖然圖1顯示穿透孔1 9每一個直接地延伸到傳導薄膜5的 表面6 ’但應該了解在傳導薄膜是一模製之薄膜的具體實施 例中，穿透孔19可能額外地或替代地向下延伸到銲接墊區 域4 0當中模製的傳導薄膜5不存在的區域。 絕緣薄膜3通常使傳導薄膜5與銲接墊區域4〇當中的基體 1之上和當中所形成的其他裝置隔絕。應譎了解，雖然電晶 體7顯示成包括在基體1當中在銲接墊27之下和在銲接塾區 域4 0當中所形成的源極區域s和汲極區域d，可能使用其他 的有效裝置。本發明的一個優點在於由於銲接塾的雙鑲嵌 結構气障壁層薄膜1 3的存在形成銲接墊區域4 〇當中銲接墊 開口的下方表面，各種有效裝置中的任何一種可能形成在 銲接墊區域40當中和銲接墊27之下的基體i之中或之上。 應該進一步了解可包含超過一個有效裝置在銲接墊區域4〇 當中。 在圖1中所顯示的完整結構也包括銲接到銲接墊2 7的頂 端表面24之傳導性外部線25。因爲本發明的銲接墊之結構 ，當外邵線2 5使用通常壓迫在下面的基體之傳統銲接方法 銲接到頂端表面24時，防止裂縫形成在例如下方介質薄膜 11之下面的介質薄膜中。同樣地，與銲接程序有關的應力 效應減少。抑止穿過下面的介質薄膜之漏戍，允許例^泰 晶體7的兔效裝置包括在銲接墊區域4〇當中的銲接墊” 2 圖2表示依照本發明銲接墊結構之另一可仿效的具體奋> 例。在圖2中顯示的結構大體上與圖！中顯示的銲接二： i紙張尺度適用中國國家標準（CN^T^； (21〇 χ 297公爱 -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 9 - 經濟部智慧財產局員工消費合作社印製 4/7000 五、發明說明（7 ) 相同’除了在圖2中，障壁層薄膜丨3不側向地延伸超過銲 接墊區域40。在銲接墊區域4〇當中障壁層薄膜13的出現、 和銲接墊2 7包括穿透孔丨9的雙鑲嵌結構，足夠在銲接製程 期間抑止那些下面的薄膜中與應力相關的缺點，外部導線 25藉由該銲接製程銲接到銲接墊27的頂端表面24。圖2的 其他特徵和圖1中的那些特徵完全相同且連同圖i 一起描述。 圖3是代表圖1和2所顯示的每一斷面結構之頂端視界的 平面圖。同樣地，虛線1 9代表圖中1和2所顯示的穿透孔， 其從銲接墊向下延伸且其可提供對形成在銲接墊之下且在 銲接墊-區域40當中的特徵之連接。導線29提供對形成在基 把1上或當中之其他特徵的電氣連接。應該了解的是銲接墊 27的配置不打算限制於圖3中顯示的正方形結構。相反的 ，銲接墊2 7可能採取各種形狀。舉例來説，銲接墊2 7的形 狀可能是矩形、梯形、或圓形的。此外，本發明的銲接墊 結構不意圖限制於圖3中所顯示的穿透孔丨9之數目和安排 。在圖3中顯示的九個穿透孔目的只是作爲示範。在各種具 體實施例中，依照本發明形成的雙鑲嵌銲接墊結構可能包 括任何數目的穿透開口 19，包括在銲接墊區域4〇當中的一 單一穿透。 關於圖1、2和3的每一者，應該強調各種特徵爲了清楚 之故已經苎大或縮小。在圖U中所顯示之特徵的相關大小 目的不是精確地表現實際具體實施例中之特徵的眞實相關— 大小；相反的，它們主要是例示的。舉例來説，所顯示的 每一薄膜之厚度相對於銲接墊結構的側向尺寸增加，以便 -10- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 477000 8 A7 B7 、發明說明（ 舉例説明薄膜的相關安排。 現在轉換到圖4 A _ 4 M，顯示本發明的另一態樣。圖4 A - 表示用來形成銲接蟄結構的各種可仿效具體實施例之處 理運作的程序。圖4A是表示傳導薄膜5的一斷面圖，本發 明的銲接墊結構將形成於其上。如圖所示，傳導薄膜 5形成在料塾區域當中且在—基體之上，該基體包括形成 於傳導薄膜5之下銲接錢域當巾的有效裝£。爲了清楚的 目的，在傳導薄膜5之下的底部構造未顯示在圖4A_4M中 ，但應該了解的是銲接墊區域4〇包括形成在基體當中或之 上且'銲接墊之下的有效裝置。在傳導薄膜5之下的基體和 有效裝置（未顯示）如結合圖1所描述。在一可仿效具體實施 例中，傳導薄膜5可能是—例如鶴、銘、銅、銘合金、或銅 合金的金屬薄膜，或者它可能是例如複晶矽等的半導體薄 膜。傳導薄膜5可能是-模製的薄膜，而在_可仿效實 施例中將會模製在銲接㈣形成於其上的區域（銲接塾^域 40)當中。 現在轉到圖4B，顯示了下方介質薄膜u。下方 1—1可能是-氧化物、氮氧化物（Gxy咖de)、或其他絕緣薄 ^ S tcT^T.T ^ ^ ^ A ^ ^ (CVD) ^ ^ ^ ^ ^ 圖化表^成在下方介質薄膜u上的障壁層薄和。 障壁層薄亨13可能透過例如CVD、濺射或篆私 ' 形成。障壁層薄膜1 3包括頂A矣而曰/ 、A々傳統方法 罕土層祕13包括頂场表面14最後將會 蟄開口的下方表面，該辞接塾開口的下方表面將〜= -其後沉澱、覆蓋在上面的介質薄膜中。障壁層薄膜"顯 本紙張尺度適用中國國家標準（⑽)Α4規格（210 X 297公髮 ^--------^—------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -11 477000 五、發明說明（9 ) 示爲形成在銲接塾區域4〇當中，且也側向延伸超過婷接軌 區域40。在另一可仿效具體實施例中，障壁層薄膜可使用 傳統的方法模製，且將只保持在銲接墊區域4〇當中。在各 種可仿效具體實施例中，障壁層薄膜13可能是包（Ta)、备 矽化物（TaSl)、妲氮化物（TaN)、鈦（Ti)、鈦矽化物（τι叫、 鈦氮化物（TiN)、鎢矽化物（WSi)、或鎢矽氮化物（wsiN)所 形成的一薄膜。在另一可仿效具體實施例中，障壁層薄膜 13可能代表使用任何上述的障壁層薄膜之組合所形成的一 合成薄膜。障壁層薄膜丨3的厚度21可能是如裝置需求所決 足的任何適當厚度，但最好將是在5〇〇到2〇〇〇埃0叫你〇11^ 的範圍當中。 現在轉到圖4D，上方介質薄膜15形成在障壁層薄膜13的 頂端表面14上。上方介質薄膜15可能是一氧化物、氮氧化 物、或其他絕緣薄膜，且可能是與下方介質薄膜u相同或 不同的薄膜。上方介質薄膜！ 5的厚度16可能是如裝置需求 所決足的任何適當厚度。在各種可仿效具體實施例中，厚 度16可能從200變化到20,000埃。上方介質薄膜丨5包括頂端 表面2 3 ’且可能使用例如CVD或電漿增強的CVD之傳統方 法形成。 圖4E顯示藉由除去上方介質薄膜15在銲接墊區域4〇中的 部分所形#在銲接墊區域4 0當中的銲接墊開口 2 0。這是透 過在上方介質薄膜15的頂端表面23上所形成的一遮罩薄膜 3 1當中形成一遮罩樣式完成的。可能使用傳統的處理技術 ’例如藉由在頂端表面2 3上覆蓋一例如光阻蚀刻劑的一感 -12- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 叮 # 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 477000 五、發明說明（10) 光I4生遮罩薄膜3 1，然後接著使用傳統的方法模製薄膜。在 樣式形成在遮罩薄膜3丨中之後，然後開口 2 〇透過刻蚀法 ’成可使用濕的、化學刻蝕法，或可使用乾的、RIE(反 應離子㈣）電漿—法。可使用選擇地將上方介質薄膜ι 5 從銲接墊區域40移除、且不會顯著地侵襲陸壁層薄膜^的 任何適當蝕刻程序。如所可見，在銲接墊區域40中，上方 介質薄膜15的整個厚度16藉由蝕刻移除，產生包括也是障 壁層薄膜13的頂端表面之下方表面"的開口 2〇。應該進一 步地了解的是在銲接墊區域4〇當中和在傳導薄膜5之下， 形成气少一有效裝置（如圖所示）。在開口2〇形成之後 ，遮罩薄膜3 1可能藉由傳統的方法移除。 圖4 F頌示在雙鑲肷處理程序中使用的後續模製步驟。在 圖4F中，遮罩薄膜33使用傳統的方法形成和模製。在一可 仿效具體實施例中，遮罩薄膜S3可能是與圖4E中所顯示的 感光性薄膜3 1相似或完全相同的一感光性薄膜。形成一樣 式，其包括可提供在要形成於銲接墊開口 2〇(如將在圖4H 中頭π )當中的金屬銲接墊和傳導薄膜5之間的電氣觸點之 穿透孔1 9。在一樣式形成之後，RIE或電漿蝕刻技術將用 來除去障壁層薄膜13未被遮罩薄膜3S覆蓋的部分。 在障壁層薄膜13的移除完成之後，一後續蝕刻程序用來 除去下方^質薄膜1 1在穿透i 9區域中障壁層薄膜i 3已移除 的邯分。傳統的反應離子蚀刻程序可用來選擇地除去介質~ 薄膜1 1而不顯著地侵襲傳導薄膜5。圖4 ^顯示穿透開口 1 9 從鮮接塾開口 2 〇延伸到下面的傳導薄膜5露出的表面6。在 -13- 本紙張尺㈣用中國國家標準（CNS)A4規格（210 X 297公髮) . 裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 477000
經濟部智慧財產局員工消費合作社印製 穿透孔1 9已藉由蝕刻穿過障壁層薄膜i 3和下方介質薄膜i i 的整個厚度形成之後，遮罩薄膜33可使用傳統的方法移除 。應該了解的是，在各種可仿效具體實施例中，傳導薄膜5 可能是一模製的薄膜。同樣地，穿透孔〗9可向下延伸到模 製的傳導薄膜5之表面6，藉此露出模製的傳導薄膜5之一 個區域，或者穿透孔可替代地向下延伸到銲接墊區域4〇當 中模製的傳導薄膜5不存在的區域中之其他特徵。應該進一 步地了解，依照各種可仿效的具體實施例，任何數目的穿 透孔可穿過銲接墊開口 2 0的底部形成。 在气一可仿效處理程序（未顯示）中，一些模製和蝕刻處 理運作的順序可顚倒。依照一第二可仿效具體實施例，在 所疋成的薄膜結構如圖4 D所示在蝕刻之前形成之後，穿透 或f透孔首先形成在銲接墊區域當中。穿透開口藉由模製 第一遮罩薄膜以產生類似於如圖4 F所顯示的遮罩薄膜Μ 的一樣式，然後蝕刻穿過上方介質、和障壁層薄膜的整個 厚度形成。在第一遮罩薄膜移除之後，另一樣式使用一第 二遮罩薄膜形成並露出整個銲接墊區域，然後其蝕刻以將 上方介質薄膜的整個厚度從銲接墊區域移除。此介質蝕刻 同=地向下蝕刻穿透開口到下面的傳導薄膜之上方表面， 在第二遮罩薄膜移除之後產生在®4G中所顯示的穿透孔和 ，構。雖$依照此第二可仿效具體實施例使用一不同處理 私序，所產生如圖4 G顯示的結構，是相同的。 圖4H表示在銲接蟄開口 2〇當中和在穿透孔19當中形成的 金屬薄膜17，藉此提供從銲接墊27到例如傳導薄膜5之下 ΦΜ.--------^---------^0. (請先閱讀背面之注意事項再填寫本頁)
本紙張尺錢帛t¥WS^CNS)A4規格(21? 297公釐） H-/ /υυυ 五、發明說明（12) (請先閱讀背面之注意事項再填寫本頁) =特：心電氣觸點。金屬薄膜17可能是-鎢薄膜、-銅 ㉟薄膜、例如—銘⑦薄膜或_軸⑦薄膜的合金 =二料當的金屬薄膜。銲接塾金屬薄膜17可能透過賤 發、化學蒸汽沈澱或其他方法形成。在沈澱時 至·薄膜17疋包括形成在上方介質薄膜15的頂端表面 方:4刀之連續薄膜。在一可仿效具體實施例中，金 屬薄膜1 7的厚度！ 8選擇爲比婷接塾開口 2 〇的深度更大（如 請所顯示的上方介質薄膜15的厚度16)，以確保婷接塾 =口 20完全地填滿金屬薄膜17。金屬薄膜17的厚度“可 能依照上方介質薄膜15的厚度改變，但可能像2微米一樣 大、。在薄膜的沈澱之後，例如化學機械拋光（CMp)的拋光 方法可旎用來除去金屬薄膜17位於頂端表面23上方的部分 ，藉此產生在圖41中顯示的銲接墊結構。可以看到頂端表 面=和銲接墊27的上方表面24，形成一平滑的連續表面且 大體上是共平面的。銲接墊27的頂端表面23可能接著銲接 到一外部導線，如圖i所示。 經濟部智慧財產局員工消費合作杜印製 圖4J顯示本發明的銲接墊之另一可仿效具體實施例。在 圖4J中顯示的銲接墊包括上方障壁薄膜35。上方障壁薄膜 3 5以下列方式加入到結構。取代沉澱一具有足以完全地填 滿銲接塾開口 2〇的厚度之金屬薄膜ι7(如用來形成在圖々η 中顯示的f構），金屬薄膜17的沈澱在金屬薄膜17完全地 填滿銲接墊開口 2 0之前停止。在此時，上方障壁層薄膜3 5 -形成在銲接墊金屬薄膜17的頂端表面，包括在銲接墊開口 20當中的一部分。上方障壁層薄膜35可能包括連同障壁層 -15- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 妒濟部智慧財產局員工消費合作社印制农 五、發明說明（13) 薄膜13列出的任何—種薄膜，且可能有像1000埃一樣大的 厚度。上万障壁層薄膜35可能使用濺射技術、或化學蒸汽 沈殿、或其他沈凝程序形成。在上方障壁層薄膜35形成在 錦接螯金屬 '薄膜17上和在銲接塾區域20當中之後，例如 CMP的二拋光技術用來除去位於上方介質薄膜15的頂端表 面23上方I銲接墊金屬薄膜17和上方障壁薄膜35兩者的部 分0 應4 了解的疋在圖4 j中顯示的可仿效具體實施例之銲接 墊，也將包括形成在銲接墊之下的有效裝置。這個特徵顯 示在圖」和2的可仿效具體實施例中所顯示之完成的銲接墊 結構。此外，這個可仿效具體實施例可能替代地包括障^ 層薄膜13從銲接墊區域4〇以外的區域移除。應該進一步地 了解在圖〇中所顯示的可仿效具體實施例，也可能銲接到 如圖1和2之每一者所示的一外部導線。 依照本發明的程序之另一可仿效具體實施例，可調整處 理運作的程序以形成在圖2中所顯示的結構。在圖2中顯示 的銲接墊結構，與圖1中顯示的銲接墊結構之不同在於障壁 層薄膜13不側向地延伸超過圖2中的銲接墊區域4〇。用來 形成這個可仿效具體實施例的處理運作的程序可能包括在 下方介質薄膜11上形成障壁層薄膜13，然後在形成一上方 介質薄膜$前模製障壁層薄膜13，如圖4K所示。下方介質 薄膜11和障壁層薄膜13兩者如結合圖4B_4c所描述。傳統- 的挺製万法可用來模製障壁層薄膜、和除去障壁層薄膜側 向延伸超過婷接塾區域4 0的部分。 本紙張尺度刺中國國家標準（CNSM4規格（210 X 297公釐) --------^--------- ί請先閱讀背面之注音？事項再填寫本頁) -16. 477000 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（14 ) 現在轉到圖4L，上方介質薄膜丨5形成在模製的障壁層薄 膜1 3上。上方介質薄膜i 5如連同圖4 D所描述。然後，銲 接塾開口 20形成在上方介質薄膜15當中且露出障壁層薄膜 13。銲接墊開口 20如連同圖4E所描述一樣形成，而穿透 孔1 9如連同圖4 F和4 G所描述一樣形成。 圖4M表示障壁層薄膜13在銲接墊區域4〇當中形成銲接 墊開口 2 0的底郅表面1 4。銲接墊填滿金屬薄膜1 7，如連同 圖4H和41所描述一樣形成。可以發現障壁層薄膜i 3與圖 4E-4J中所顯示的障壁層薄膜之區別在於圖4M中所顯示的 障壁層> 薄膜13未在上方介質薄膜15之下延伸進入銲接墊區 域40以外的區域之區域41之内。在圖4%中顯示的結構與 圖2中顯示和描述的銲接墊結構之上面部分完全相同。 雖然本發明結合一單一銲接墊顯示和描述，應該了解的 是程序和結構包含在一基體上所形成的多個積體電路裝置 當中同時地形成的多個銲接墊。本發明不意圖限制於在銲 接墊I下的一特足結構；相反地，本發明涵蓋在具有一障 壁層薄膜作爲一底部表面的一銲接墊開口當中所形成的銲 接墊，帶有任何數目的穿透孔在底部表面之下銲接墊區域 當中垂直地延伸。在銲接墊之下可能是一可模製的傳導薄 膜，和在銲接墊區域當中的任何數目之不同有效裝置。穿 透孔可能，供對傳導薄膜或其他在底下的有效裝置之電氣 連接。在銲接墊之下的傳導薄膜可能連接到在銲接载區域 當中或外部的有效裝置。結合以形成一個別積體電路裝置 之個別的銲接墊，也可能在結構上彼此不同。 (請先閱讀背面之注意事項再填寫本頁) _裝--------訂---- Μ·· μ·!蜃 s'. -17- 477000 五、發明說明（15 ) 則述僅舉例説明本發明的原理。因此熟知該項技藝人士 將可發現，雖然在此處未明確地描述或顯示，能夠設計各 種安排具體地實現本發明的原理且包含在它的精神和範疇 中。此外，在此處所詳述的所有範例和假設性語言主要地 /、疋〜要特別地作爲敎學之目的，和幫助閱讀者了解發明 人爲了促進涘技術所提出的本發明之原理和概念，和將解 釋爲不限制於如此的特別列舉的範例和條件。此外，在此 處詳述本發明的原理、態樣、和具體實施例的所有陳述， 以及其特；ε範例，目的在於包含其結構的和功能的等效物 。除此之外，如此的等效物j I' 一 叼守双物打异包括目前已知的等效物和 未來所發展的寺效物兩者力钟θ 、一 物两f也就疋，所發展執行相同功能 (典關結構的任何元件。因此，本發明的範_，不打算限 制於此處所顯示和描述的那些可仿效具體實施例。相反的 ，本發明的㈣和精神由所附加的申請相㈣具體表 -----------i^w— --------^---------. (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 297公釐: 本紙張尺度適用中國國家標準（CNS)A4規格（210 ： -18-

Claims (1)

  1. 477000 A8 B8 C8 D8 六、申請專利範圍 1 · 2. 6. 經濟部智慧財產局員工消費合作社印製 8. 9. 一種半導體裝置，包含一銲接墊形成於一包括有有效裝 置形成於其上的一基體區域上，該銲接墊包括銲接墊金 屬形成在具有一障壁層形成下方表面的一開口當中，和 形成在穿過下方表面和穿過障壁層之下配置的一介質層 所形成之至少一穿透當中。 如申請專利範圍第1項之半導體裝置 導層插入在基體區域和介質層之間。 如申請專利範圍第2項之半導體裝置 至少一穿透連接到傳導層。 如申請專利範圍第2項之半導體裝置，其中傳導層連接 到看效裝置中的至少一個。 如申请專利範圍第2項之半導體裝置，其中傳導層包含 一模製的薄膜。 如申請專利範園第1項之半導體裝置，其中障壁層包含 鈦氮化物（TiN)。 如申請專利範圍第1項之半導體裝置，其中障壁層是由 妲（Ta)、鈦（Ti)、妲氮化物（TaN)、鎢矽化物（WSi)、鎢 石夕氮化物（WSiN)、夕化物（TaSi)、和鈥秒化物（TiSi) 所組成的群體中選擇出之一材料所形成。 如申請專利範圍第1項之半導體裝置，進一步包含連接 到銲接墊的一頂端表面之一導線。 如申請專利範圍第1項之半導體裝篆，進一步包含一進 一步障壁層形成在銲接墊開口當中銲接墊金屬的至少一 部份上。 進—步包含一傳 其中銲接墊透過 --------^---------^ (請先閲讀背面之注意事項再填寫本頁) -19 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） 477000 經濟部智慧財產局員工消費合作社印製 少一種的金屬薄膜 子蚀刻 A8 B8 C8 D8 六、 申請專利範圍 1 0 ·如申請專利範圍第1項之半導體装置，其中銲接墊金屬 包含鎢（W)、鋁（A1)、銅（Cu)、一鋁合金和一銅合金中 之一種0 1 1 ·如申請專利範圍第2項之半導體裝置，其中傳導層包含 鎢（W)、銘（A1)、銅（Cu)、一館合金和一銅合金中之一 種。 i2· —種用以在一半導體裝置當中形成一銲接墊的程序，包 含步驟： a) 提供一半導體基體，包括多個有效裝置形成於其上； b) 在基體上形成一下方介質薄膜； c) 在下方介質薄膜上至少一銲接墊區域中形成一障壁 層’该銲接塾區域包括多個有效裝置中的至少一個； d) 在障壁層和下方介質薄膜上形成一上方介質薄膜； e) «料接塾區域將上方介質薄膜移除，藉此露出障壁 層並形成一鮮接整開口； f) 在銲接塾區域當中形成至少一穿透，每一穿透延伸 穿過障壁層和穿過下方介質薄膜；和 g) 以一金屬薄膜充分地填滿至少一穿透和銲接墊開口。 1 3 ·如申請專利範圍第i 2項之程序，其中步驟g)包括在至少 一穿透當中和在銲接墊開口當中沉澱包括銅和鋁中之至 1 4 ·如申請專利範圍第1 2項之程序，其中步驟f)包括反應離 如申請專利範圍第12項之程序，其中步驟e)包括選擇地 -20 --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 木紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 477000 A8 B8 C8
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JP3382549B2 (ja) * 1998-11-02 2003-03-04 キヤノン株式会社 半導体装置及びアクティブマトリクス基板
JP2000299350A (ja) * 1999-04-12 2000-10-24 Toshiba Corp 半導体装置及びその製造方法
JP2001196413A (ja) * 2000-01-12 2001-07-19 Mitsubishi Electric Corp 半導体装置、該半導体装置の製造方法、ｃｍｐ装置、及びｃｍｐ方法

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JP2001298029A (ja) 2001-10-26
GB2364170B (en) 2002-06-12
GB2364170A (en) 2002-01-16

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