TW201923868A - Die bond film, dicing die-bonding film, and semiconductor apparatus manufacturing method - Google Patents

Abstract

The invention provides a die bond film, a dicing die-bonding film, and a semiconductor apparatus manufacturing method, in order to obtain a semiconductor chip with die bond films in the expanded process performed using dicing die bond films, being suitable for inhibiting spilling, and realizing good splitting. The die bond films 10 of the present invention are 10 mm of distance between initial zippers about a 10-mm-wide die-bond-films specimen. The yield point strength in a tensile test done on condition of for 23 DEG C and speed-of-testing/of 300 mm is less than 15N, and breaking strength isless than 15N, and the degree of breaking extension is 40 to 400%.

Description

Sticky crystal film, cut crystal sticky film and semiconductor device manufacturing method

The present invention relates to a die attach film and a cut die attach film that can be used in the manufacturing process of a semiconductor device, and a method for manufacturing a semiconductor device.

In the manufacturing process of semiconductor devices, in order to obtain a semiconductor wafer with a bonding film equivalent to the size of the wafer with a die attach, that is, a semiconductor wafer with a die attach film, a cut die attach film is sometimes used. The cut crystal sticky film has a size corresponding to a semiconductor wafer as a processing object, for example, a cut crystal tape including a substrate and an adhesive layer, and a sticky film peelably adhered to the side of the adhesive layer.

As one of the methods for obtaining a semiconductor wafer with a die-bonding film by using a die-bonding film, a method is known in which the die-bonding film is cut by expanding the band of the die-bonding film. In this method, a semiconductor wafer that is a workpiece is first attached to a die-bond film of a die-cut die-bond film. The semiconductor wafer is processed, for example, in such a manner that it can be cut and singulated into a plurality of semiconductor wafers together with the cutting of the sticky crystal film in the subsequent process. Secondly, in order to generate a plurality of adhesive film pieces which are in close contact with the semiconductor wafer, the sticky film on the self-cutting band is cut off, and the cut band of the cut-off sticky film is expanded (expansion for cutting). step). In this expansion step, a cut is also generated at a portion corresponding to the cut portion of the die-bond film of the semiconductor wafer on the die-bond film, and the semiconductor wafer is singulated into a plurality of semiconductor wafers on the die-bond die-bond film or the die-cut tape. Secondly, for example, after the cleaning step, each semiconductor wafer is lifted up from the lower side of the dicing tape by the pin member of the pickup mechanism together with the die-bonding film equivalent to the size of the wafer that is closely contacted thereon, so as to self-cut the crystal. Take it with you. In this way, a semiconductor wafer with a sticky crystal film is obtained. The semiconductor wafer with a sticky crystal film is fixed to an adherend such as a mounting substrate through a sticky crystal through the sticky film. Techniques related to, for example, the die-cutting die-bonding film used in the above manner and the die-bonding film contained therein are disclosed, for example, in Patent Documents 1 to 3 below. [Prior Art Literature] [Patent Literature]

[Patent Literature 1] Japanese Patent Laid-Open No. 2007-2173 [Patent Literature 2] Japanese Patent Laid-Open No. 2010-177401 [Patent Literature 3] Japanese Patent Laid-Open No. 2012-23161

[Problems to be solved by the invention]

It is required that the die-bond film which is one of the constituent elements of the die-bond die film used in the above-mentioned extension step for cutting is appropriately cut at a predetermined cut-off position in the extension step. Moreover, the thicker the thickness of the viscous crystal film, the more difficult it is to produce such a cut.

In the expansion step for severing as described above, previously, in some areas of the die-bonding film of the die-bonding film, the spatter on the self-cutting band of the die-bonding film is sometimes generated in the region where the die-bonding film is not attached to the workpiece. In addition, the thicker the thickness of the viscous crystal film, the more this splash tends to occur. This spatter of the viscous crystal film is sometimes the cause of workpiece contamination and is therefore not good.

The present invention is based on the completion of the above situation, and an object thereof is to provide an expansion step that is suitable for obtaining a semiconductor wafer with a die attach film by using a cut die bond film to achieve good cutting and suppress spatter. Die-bonding film, cut-crystal die-bonding film and semiconductor device manufacturing method. [Technical means to solve the problem]

According to a first aspect of the present invention, a sticky crystal film is provided. For this viscous film, the tenacity of the yield point in the tensile test was performed on a test film of a viscous film with a width of 10 mm under the conditions of an initial chuck distance of 10 mm, 23 ° C, and a tensile speed of 300 mm / min. (The force required to reach the drop point) is 15 N or less, the breaking strength (the force required to break) under the same test is 15 N or less, and the elongation at break (the length of the elongation at break is relative to the length of the test) The ratio of the length before elongation) is 40 to 400%. In the present invention, the drop point strength is preferably 12 N or less, more preferably 10 N or less, the break strength is preferably 12 N or less, more preferably 10 N or less, and the elongation at break is preferably 40. ~ 350%, more preferably 40 ~ 300%. The adhesive film with such a structure can be used in the form of being in close contact with the adhesive layer side of the dicing tape to obtain a semiconductor wafer with an adhesive film in the manufacturing process of a semiconductor device.

In the manufacturing process of a semiconductor device, as described above, in order to obtain a semiconductor wafer with a sticky crystal film, an expansion step for cutting using a cut crystal sticky film is sometimes performed. The inventors have found that for a die-bond film which is one of the constituent elements of a die-cut die-bond film, the initial distance between the chucks of the die-bond film test piece with a width of 10 mm is 10 mm, 23 ° C and the stretching speed. The above-mentioned composition in a tensile test performed at a tensile strength of 300 mm / min is 15 N or less, the breaking strength is 15 N or less, and the elongation at break is 40 to 400%, which is suitable for the following aspects: In the case where the crystal film is thick, for the sticky crystal film in the expansion step, a cut can also be generated at a predetermined cutting position and the spatter on the self-cutting crystal strip can be suppressed. For example, as shown in the following examples and comparative examples.

It is considered that the elongation at break in the above tensile test of the present viscous film is 40 to 400%, preferably 40 to 350%, and more preferably 40 to 300%. The above composition is suitable in the following aspects: in the expansion step, avoid The stretched length used to cut the sticky film becomes too large, and makes the sticky film prone to ductile failure rather than brittle failure. In the expansion step, the sticky-crystal film is more likely to have ductile failure, and the cutting stress is more likely to be transmitted to the predetermined cutting position of the film. Therefore, it is easy to cut at the predetermined cutting position.

It is considered that the yield point strength of the above-mentioned tensile test of the viscous crystal film is 15 N or less, preferably 12 N or less, more preferably 10 N or less, and fracture strength of 15 N or less, preferably 12 N or less, more The above-mentioned constitution preferably below 10 N is suitable for suppressing the strain energy accumulated inside the film during the elongation process and the fracture process of the viscous crystal film in the expansion step for cutting. In the expanding step, the smaller the internally accumulated strain energy in the elongation process and the fracture process is, the more difficult it is for the exposed area (the area not covered by the workpiece) to break and cause the phenomenon of film spatter.

As described above, the first aspect of the present invention is suitable for the case where the die-bonding film is in close contact with the adhesive layer side of the dicing tape and is used for the extension step for cutting, to achieve good cutting and to suppress splashing.

The thickness of the adhesive film is preferably 40 μm or more, more preferably 60 μm or more, and even more preferably 80 μm or more. Such a structure is suitable for embedding the first semiconductor wafer as a whole or a part of a bonding wire connected to the first semiconductor wafer and mounting the first semiconductor wafer by wire bonding and mounting on the mounting substrate using the adhesive film. An adhesive film for forming an adhesive layer on a second semiconductor wafer (a thicker adhesive film for semiconductor wafer embedding). Alternatively, the structure related to the thickness of the die-bonding film is suitable for using the die-bonding film to cover the bonding wire connection portion of the first semiconductor wafer to be wire-bonded and mounted on the mounting substrate and embed the bonding wire. A part of a bonding film for forming an adhesive layer of a second semiconductor wafer is bonded to a part of the first semiconductor wafer (a thicker bonding film for bonding between semiconductor wafers partially buried with bonding wires). Alternatively, the configuration related to the thickness of the die-bonding film is suitable in the following method: using this die-bonding film as the first semiconductor wafer to be flip-chip mounted on the mounting substrate and bonding the second semiconductor wafer to the mounting substrate Adhesive film for forming an adhesive layer (thicker adhesive film for wafer embedding). The thickness of the adhesive film is preferably 200 μm or less, more preferably 160 μm or less, and even more preferably 120 μm or less. Such a structure is preferable in terms of avoiding excessive yield strength or breaking strength and elongation at break of the present viscous crystal film, and achieving the yield point strength in the above tensile test is 15 N or less, and the breaking strength is 15 N The above-mentioned configuration with the elongation at break of 40 to 400% is as follows.

The viscosity at 120 ° C in the unhardened state of the present viscous film is preferably 300 Pa · s or more, more preferably 700 Pa · s or more, and more preferably 1000 Pa · s or more. The viscosity at 120 ° C in the unhardened state of the present viscous film is preferably 5000 Pa · s or less, more preferably 4500 Pa · s or less, and more preferably 4000 Pa · s or less. These constitutions related to the viscosity of the die-bonding film are suitable in the following aspects: the present die-bonding film is used as the above-mentioned various thick adhesive films for forming an adhesive layer accompanying the embedding of a semiconductor wafer or a bonding wire.

The adhesive film preferably contains an inorganic filler, and the content of the inorganic filler in the adhesive film is preferably 10% by mass or more, more preferably 20% by mass or more, and more preferably 30% by mass or more. When the present viscous crystal film contains an inorganic filler, the content of the inorganic filler is preferably 50% by mass or less, more preferably 45% by mass or less, and even more preferably 40% by mass or less. As the content of the inorganic filler in the film for forming an adhesive layer increases, the breaking elongation of the film tends to decrease and the yield point strength tends to increase. Therefore, the composition related to the content of the inorganic filler in the adhesive film It is suitable for suppressing the above phenomenon that the exposed region (the area not covered by the workpiece) of the present adhesive film is broken and the film is spattered.

The adhesive film preferably contains an organic filler, and the content of the organic filler in the adhesive film is preferably 2% by mass or more, more preferably 5% or more, and even more preferably 8% by mass or more. When the present viscous crystal film contains an organic filler, the content of the organic filler is preferably 20% by mass or less, more preferably 17% by mass or less, and even more preferably 15% by mass or less. The composition related to the content of the organic filler in the viscous crystal film is suitable in the following aspects: the falling point strength and the breaking strength of the viscous film are controlled within an appropriate range.

It is preferable that this sticky crystal film contains an acrylic resin having a glass transition temperature of -40 to 10 ° C. Such a structure is suitable for realizing the above-mentioned structure in which the drop point strength in the above-mentioned tensile test of the present adhesive film is 15 N or less.

According to a second aspect of the present invention, a cut crystal and sticky crystal film is provided. The cut crystal sticky film includes a cut crystal band and the above-mentioned sticky film of the first aspect of the present invention. The dicing tape has a laminated structure including a substrate and an adhesive layer. The adhesive film is peelably adhered to the adhesive layer of the dicing tape. Such a cut crystal sticky film provided with the first aspect of the present invention is suitable for use in the case where the expansion step for cutting is used to achieve a good cut in the sticky film and suppress spatter.

According to a third aspect of the present invention, a method for manufacturing a semiconductor device is provided. This semiconductor device manufacturing method includes the following first step and second step. In the first step, a semiconductor wafer that can be singulated into a plurality of semiconductor wafers, or a semiconductor wafer including a plurality of semiconductor wafers, is bonded to the die-bond film of the second aspect of the cut-to-seal die-bond film of the present invention. Split body. In the second step, by expanding the dicing band of the dicing die-bonding film, the dicing die film is cut to obtain a semiconductor wafer with the dicing die-film. The method for manufacturing a semiconductor device, which includes the second step, ie, the expansion step for cutting, using a die-cut cemented film having the first aspect of the present invention, is suitable for achieving good results in the expanded film. Cut off and suppress splash.

FIG. 1 is a schematic cross-sectional view of a cut die-bond film X according to an embodiment of the present invention. The cut crystal sticky film X has a laminated structure including the sticky film 10 and the cut band 20 according to an embodiment of the present invention. The dicing tape 20 has a laminated structure including a substrate 21 and an adhesive layer 22. The adhesive layer 22 has an adhesive surface 22 a on the side of the adhesive film 10. The adhesive film 10 is releasably adhered to the adhesive layer 22 or the adhesive surface 22 a of the dicing tape 20. The die-cutting die-bonding film X can be used, for example, by a user in the following expansion steps in the process of obtaining a semiconductor wafer with a sticking-die film in the manufacture of a semiconductor device. In addition, the dicing die-bonding film X has a disk shape having a size corresponding to that of a semiconductor wafer as a workpiece in the manufacturing process of a semiconductor device, and its diameter is, for example, in a range of 345 to 380 mm (12-inch wafer corresponding type). ), In the range of 245 to 280 mm (8-inch wafer counterpart), in the range of 495 to 530 mm (18-inch wafer counterpart) or in the range of 195-230 mm (for 6-inch wafer counterpart) type).

The die-bond film 10 of the cut-crystal die-bond film X has a structure capable of functioning as an adhesive for a die-bond that exhibits thermosetting properties. The die-casting film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as resin components, or may have a composition containing a thermoplastic resin having a thermosetting functional group capable of reacting with a hardener to form a bond. When the viscous film 10 has a composition containing a thermoplastic resin with a thermosetting functional group, the viscous film 10 does not need to further contain a thermosetting resin. Such a viscous crystal film 10 may have a single-layer structure, or may have a multi-layer structure composed of different layers between adjacent layers.

Examples of the thermosetting resin when the viscous film 10 has a composition containing a thermosetting resin and a thermoplastic resin include epoxy resin, phenol resin, amine resin, unsaturated polyester resin, and polyamine. Urethane resin, silicone resin, and thermosetting polyimide resin. The die-casting film 10 may contain one type of thermosetting resin or two or more types of thermosetting resin. Epoxy resin tends to have a low content of ionic impurities and the like that may cause corrosion of semiconductor wafers that are the target of sticky crystals. Therefore, it is preferable as the thermosetting resin in the sticky film 10. Moreover, as a hardening | curing agent for making an epoxy resin show thermosetting property, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, and fluorene. Type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoin type, isocyanuric acid triglycidyl type and glycidylamine type epoxy Resin. Phenol novolac epoxy resin, o-cresol novolac epoxy resin, biphenyl epoxy resin, trihydroxyphenylmethane epoxy resin and tetraphenol ethane epoxy resin are rich in hardeners. The phenol resin is preferable as the epoxy resin in the sticky film 10 in terms of reactivity and heat resistance.

Examples of the phenol resin that can be used as a curing agent for epoxy resins include novolac-type phenol resins, soluble phenol-type phenol resins, and polyhydroxystyrenes such as polyparahydroxystyrene. Examples of the novolac-type phenol resin include a phenol novolak resin, a phenol aralkyl resin, a cresol novolac resin, a third butyl novolac resin, and a nonylphenol novolac resin. The die-casting film 10 may contain one kind of phenol resin as a hardener of the epoxy resin, and may also contain two or more kinds of phenol resin as a hardener of the epoxy resin. Phenol novolak resin or phenol aralkyl resin tends to improve the connection reliability of the adhesive when used as a hardener for epoxy resin as an adhesive for viscous crystals, and is therefore used as a viscous film 10 A hardener for epoxy resins is preferred.

In the case where the viscous film 10 contains an epoxy resin and a phenol resin as a hardener thereof, it is preferable that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin, and more preferably Two resins are formulated at a ratio of 0.8 to 1.2 equivalents. Such a configuration is preferable in that the curing reaction of the epoxy resin and the phenol resin is sufficiently advanced during the curing of the viscous film 10.

The content ratio of the thermosetting resin in the viscous film 10 is preferably 5 to 60% by mass, and more preferably 10 from the viewpoint of appropriately exhibiting its function as a thermosetting adhesive in the viscous film 10. ～ 50% by mass.

The thermoplastic resin in the adhesive film 10 is, for example, a person who performs the function of an adhesive. As the thermoplastic resin when the adhesive film 10 has a composition containing a thermosetting resin and a thermoplastic resin, for example, acrylic resin, natural Rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, Thermoplastic polyimide resin, polyamine resin such as 6-nylon or 6,6-nylon, phenoxy resin, saturated polyester resin such as polyethylene terephthalate or polybutylene terephthalate, Polyammonium imine resin and fluororesin. The die-casting film 10 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins. Acrylic resin is preferred as the thermoplastic resin in the viscous crystal film 10 because it has fewer ionic impurities and high heat resistance.

In the case where the sticky film 10 contains an acrylic resin as a thermoplastic resin, the acrylic resin preferably contains monomer units derived from a (meth) acrylic acid ester in the largest proportion by mass. "(Meth) acrylic" means "acrylic" and / or "methacrylic".

Examples of the (meth) acrylic acid ester as a monomer unit for forming an acrylic resin, that is, the (meth) acrylic acid ester as a constituent monomer of the acrylic resin include, for example, (meth) acrylic acid alkyl esters, Cycloalkyl (meth) acrylate and aryl (meth) acrylate. Examples of the alkyl (meth) acrylate include methyl (meth) acrylate, ethyl, propyl, isopropyl, butyl, isobutyl, second butyl, third butyl, Amyl, isoamyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl (i.e. Lauryl ester), tridecyl ester, tetradecyl ester, cetyl ester, octadecyl ester, and eicosyl ester. Examples of the cycloalkyl (meth) acrylate include cyclopentyl and cyclohexyl (meth) acrylic acid. Examples of the aryl (meth) acrylate include phenyl (meth) acrylate and benzyl (meth) acrylate. As a constituent monomer of the acrylic resin, one (meth) acrylate may be used, or two or more (meth) acrylates may be used. The acrylic resin can be obtained by polymerizing a raw material monomer for forming the acrylic resin. Examples of the polymerization method include solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization.

The acrylic resin may use, as the constituent monomer, one or two or more other monomers copolymerizable with the (meth) acrylate in order to achieve, for example, improvement in cohesive force or heat resistance. Examples of such a monomer include a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, an epoxy group-containing monomer, a sulfonic acid group-containing monomer, a phosphate group-containing monomer, and propylene. Lamine and acrylonitrile. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, and fumaric acid. And butenoic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxyl-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and 6 (meth) acrylate -Hydroxyhexyl ester, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethyl ring) (Hexyl) methyl ester. Examples of the epoxy-group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, and (meth) acrylamidopropyl Sulfonic acid and (meth) acrylic acid naphthalenesulfonic acid. Examples of the phosphate-group-containing monomer include 2-hydroxyethylpropenylphosphonophosphate.

From the viewpoint of achieving a higher cohesive force in the viscous film 10, the acrylic resin contained in the viscous film 10 is preferably a copolymer of butyl acrylate, ethyl acrylate, and acrylonitrile.

When the die-casting film 10 has a composition containing a thermoplastic resin having a thermosetting functional group, as the thermoplastic resin, for example, an acrylic resin containing a thermosetting functional group can be used. The acrylic resin used to form the thermosetting functional group-containing acrylic resin preferably contains the largest number of monomer units derived from the (meth) acrylate in a mass ratio. As such a (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as the constituent monomer of the acrylic resin contained in the adhesive film 10 can be used. On the other hand, examples of the thermosetting functional group for forming an acrylic resin containing a thermosetting functional group include a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group. Among these, glycidyl and carboxyl groups can be preferably used. That is, as the acrylic resin containing a thermosetting functional group, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be preferably used. In addition, a curing agent that can react therewith is selected according to the type of the thermosetting functional group in the acrylic resin containing the thermosetting functional group. When the thermosetting functional group of the acrylic resin containing a thermosetting functional group is a glycidyl group, as the curing agent, the same phenol resin as the curing agent for epoxy resins described above can be used. .

Regarding the viscous crystal film 10 before curing, in order to achieve a certain degree of cross-linking, for example, it is preferable to mix in the resin composition for forming a viscous film in advance with the above-mentioned content contained in the viscous film 10 A polyfunctional compound that reacts with a functional group at the molecular chain end of the resin component to form a bond serves as a crosslinking agent. Such a structure is preferable in terms of improving the adhesion characteristics at a high temperature and improving the heat resistance of the die-bond film 10. Examples of such a crosslinking agent include polyisocyanate compounds. Examples of the polyisocyanate compound include toluene diisocyanate, diphenylmethane diisocyanate, terephthalic acid diisocyanate, 1,5-naphthalene diisocyanate, and an adduct of a polyol and a diisocyanate. As the content of the cross-linking agent in the resin composition for forming a viscous film, the cohesive force of the formed viscous film 10 is improved relative to 100 parts by mass of the resin having the above-mentioned functional group capable of forming a bond by reacting with the cross-linking agent. From the viewpoint, it is preferably 0.05 parts by mass or more, and from the viewpoint of improving the adhesion of the formed sticky film 10, it is preferably 7 parts by mass or less. As the crosslinking agent in the die-casting film 10, other polyfunctional compounds such as epoxy resin can be used in combination with the polyisocyanate compound.

The glass transition temperature of the acrylic resin and the thermosetting functional group-containing acrylic resin prepared in the sticky film 10 is preferably -40 to 10 ° C. As the glass transition temperature of the polymer, a glass transition temperature (theoretical value) obtained based on the following Fox equation can be used. The relationship between the glass transition temperature Tg of the Fox-type polymer and the glass transition temperature Tgi of the homopolymer of each constituent monomer of the polymer. In the following Fox formula, Tg represents the glass transition temperature (° C) of the polymer, Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (° C) of the homopolymer of the monomer i. For the glass transition temperature of homopolymers, literature values can be used, for example, in "New Polymer Library 7 Introduction to Synthetic Resins for Coatings" (Mitsuka Kitaoka, Polymer Society, 1995) or "Acrylics Directory (1997 Edition) ") (Mitsubishi Rayon Co., Ltd.) lists the glass transition temperatures of various homopolymers. On the other hand, the glass transition temperature of the homopolymer of the monomer can also be obtained by a method specifically disclosed in Japanese Patent Laid-Open No. 2007-51271.

Fox formula 1 / (273 ＋ Tg) = Σ [Wi / (273 ＋ Tgi)]

The die-casting film 10 may contain a filler. The blending of the filler in the viscous crystal film 10 is preferable in terms of adjusting the elastic modulus, the yield point strength, and the elongation at break of the viscous film 10. Examples of the filler include inorganic fillers and organic fillers. The filler may have various shapes such as a spherical shape, a needle shape, and a sheet shape. In addition, the viscous crystal film 10 may contain one kind of filler, or may contain two or more kinds of fillers.

Examples of the constituent material of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate crystals. Whisker, boron nitride, crystalline silicon dioxide and amorphous silicon dioxide. Examples of the constituent material of the inorganic filler include simple metals or alloys of metals such as aluminum, gold, silver, copper, and nickel, amorphous carbon black, and graphite. When the sticky crystal film 10 contains an inorganic filler, the content of the inorganic filler is preferably 10% by mass or more, more preferably 20% by mass or more, and even more preferably 30% by mass or more. The content is preferably 50% by mass or less, more preferably 45% by mass or less, and even more preferably 40% by mass or less.

Examples of the constituent material of the organic filler include polymethylmethacrylate (PMMA), polyimide, polyimide, imine, polyetheretherketone, polyetherimide, and polyesterimide. . When the sticky crystal film 10 contains an organic filler, the content of the organic filler is preferably 2% by mass or more, more preferably 5% by mass or more, and even more preferably 8% by mass or more. The same content is preferably 20% by mass or less, more preferably 17% by mass or less, and even more preferably 15% by mass or less.

When the viscous crystal film 10 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 μm, and more preferably 0.05 to 1 μm. The structure in which the average particle diameter of the filler is 0.005 μm or more is suitable for achieving high wettability or adhesion to an adherend such as a semiconductor wafer in the die-bond film 10. The structure in which the average particle diameter of the filler is 10 μm or less is suitable for obtaining a sufficient filler-adding effect in the viscous crystal film 10 and ensuring heat resistance. The average particle diameter of the filler can be obtained using, for example, a photometric particle size distribution meter (trade name "LA-910", manufactured by Horiba, Ltd.).

The die-casting film 10 may contain a thermosetting catalyst. The blending of the thermosetting catalyst in the viscous crystal film 10 is preferred in that the viscous film 10 hardens the curing reaction of the resin component sufficiently or increases the curing reaction speed. Examples of such a thermosetting catalyst include an imidazole-based compound, a triphenylphosphine-based compound, an amine-based compound, and a trihaloborane-based compound. Examples of the imidazole-based compound include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methylimidazole. , 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methyl Imidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6- [2 ' -Methylimidazolyl- (1 ')]-ethylhexyl 𠯤, 2,4-diamino-6- [2'-undecylimidazolyl- (1')]-ethyl Mesitylene 𠯤, 2,4-diamino-6- [2'-ethyl-4'-methylimidazolyl- (1 ')]-ethyl mesity 𠯤, 2,4 -Diamino-6- [2'-methylimidazolyl- (1 ')]-ethylhexyl 𠯤 isotricyanic acid adduct, 2-phenyl-4,5-dihydroxy Methylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole. Examples of the triphenylphosphine-based compound include triphenylphosphine, tributylphosphine, tris (p-methylphenyl) phosphine, tris (nonylphenyl) phosphine, diphenyltolylphosphine, and tetrabenzene Phosphonium bromide, methyltriphenylphosphonium chloride, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. The triphenylphosphine-based compound also includes a compound having a triphenylphosphine structure and a triphenylborane structure together. Examples of such a compound include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-triborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphinetriphenylborane. Examples of the amine-based compound include monoethanolamine trifluoroborate and dicyandiamide. Examples of the trihaloborane-based compound include trichloroborane. The die-casting film 10 may contain one type of thermosetting catalyst, or may contain two or more types of thermosetting catalyst.

The adhesive film 10 may contain one or two or more other components as necessary. Examples of the other components include a flame retardant, a silane coupling agent, and an ion trapping agent. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyl. Diethoxysilane. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, and antimony hydrous oxide (such as "IXE-300" manufactured by Toa Synthetic Co., Ltd.), and zirconium phosphate of a specific structure (such as manufactured by Toa Synthetic Co., Ltd.). "IXE-100"), magnesium silicate (such as "KYOWAAD 600" manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (such as "KYOWAAD 700" manufactured by Kyowa Chemical Industry Co., Ltd.). Compounds that can form complexes with metal ions can also be used as ion trapping agents. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridine-based compounds. Among these, a triazole-based compound is preferred from the viewpoint of the stability of the complex formed with the metal ion. Examples of such triazole-based compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, and carboxybenzene Benzotriazole, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-third-butylphenyl) -5-chlorobenzotriazole , 2- (2-hydroxy-3-tert-butyl-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-tert-pentylphenyl) Benzotriazole, 2- (2-hydroxy-5-third octylphenyl) benzotriazole, 6- (2-benzotriazolyl) -4-third octyl-6'-third Butyl-4'-methyl-2,2'-methylenebisphenol, 1- (2,3-dihydroxypropyl) benzotriazole, 1- (1,2-dicarboxydiethyl) Benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-ditripentyl-6-{(H-benzotriazol-1-yl) methyl } Phenol, 2- (2-hydroxy-5-third butylphenyl) -2H-benzotriazole, 3- [3-third butyl-4-hydroxy-5- (5-chloro-2H- Benzotriazol-2-yl) phenyl] octyl propionate, 3- [3-Third-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl ] 2-ethylhexyl propionate, 2- (2H-benzotriazol-2-yl) -6- (1-methyl-1-phenylethyl) -4- (1,1,3, 3-tetramethylbutyl) phenol, 2- (2H- Benzotriazol-2-yl) -4-third butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-third octylbenzene ) -Benzotriazole, 2- (3-tert-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di Third pentylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-third-butylphenyl) -5-chloro-benzotriazole, 2- [2-hydroxy-3, 5-bis (1,1-dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2H-benzotriazol-2-yl)- 4- (1,1,3,3-tetramethylbutyl) phenol], (2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] -2H- Benzotriazole and 3- [3- (2H-benzotriazol-2-yl) -5-tert-butyl-4-hydroxyphenyl] propanoic acid methyl ester. Also, hydroquinone compounds or hydroxyanthraquinone Specific hydroxyl-containing compounds such as compounds and polyphenol compounds can also be used as ion trapping agents. Specific examples of such hydroxyl-containing compounds include 1,2-benzenediol, alizarin, 1,5-dihydroxyanthraquinone, Tannin, gallic acid, methyl gallate and pyrogallol.

The thickness of the adhesive film 10 is preferably 40 μm or more, more preferably 60 μm or more, and even more preferably 80 μm or more. The thickness of the adhesive film is preferably 200 μm or less, more preferably 160 μm or less, and even more preferably 120 μm or less.

Regarding the viscous crystal film 10, the tensile strength of the tenacity test of the viscous film test piece with a width of 10 mm under the conditions of an initial chuck distance of 10 mm, 23 ° C and a tensile speed of 300 mm / min is 15 N or less, preferably 12 N or less, and more preferably 10 N or less. At the same time, the breaking strength of the viscous crystal film 10 under the same test is 15 N or less, preferably 12 N or less, and more preferably 10 N or less. At the same time, the elongation at break of the viscous crystal film 10 under the same test is 40 to 400%, preferably 40 to 350%, and more preferably 40 to 300%. The drop point strength, breaking strength, and elongation at break can be measured using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). In addition, the adjustment of the drop point strength, breaking strength, and elongation at break of the viscous film 10 can be controlled by the amount of the inorganic filler and / or organic filler in the viscous film 10, or the above-mentioned acrylic acid in the viscous film 10 This is performed by controlling the glass transition temperature of the resin.

The viscosity at 120 ° C in the unhardened state of the viscous crystal film 10 is preferably 300 Pa · s or more, more preferably 700 Pa · s or more, and more preferably 1000 Pa · s or more. Moreover, the viscosity at 120 ° C. in the uncured state of the viscous crystal film 10 is preferably 5000 Pa · s or less, more preferably 4500 Pa · s or less, and even more preferably 4000 Pa · s or less.

For example, in the peel test under the conditions of the temperature of 23 ° C, a peeling angle of 180 °, and a tensile speed of 300 mm / min, the above-mentioned adhesive film 10 shows, for example, 0.3 to a SUS (Steel Use Stainless) plane. 180 ° peeling adhesion at 20 N / 10 mm. Such a configuration is suitable for ensuring the holding of the workpiece by the cut crystal die attach film X or the die attach film 10.

The substrate 21 of the cut crystal band 20 in the cut crystal sticky film X is an element that functions as a support in the cut crystal band 20 or the cut crystal sticky film X. The substrate 21 is, for example, a plastic substrate. As the plastic substrate, a plastic film can be preferably used. Examples of the constituent material of the plastic substrate include polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyimide, and Aromatic polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylene sulfide, aromatic polyamide, fluororesin, cellulose resin and silicone resin. Examples of the polyolefin include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and homopolymers. Polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene- (meth) acrylic copolymer, ethylene- (meth) acrylate copolymer, ethylene-butyl Olefin copolymer and ethylene-hexene copolymer. Examples of the polyester include polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. The substrate 21 may include one type of material, or may include two or more types of materials. The base material 21 may have a single-layer structure or a multilayer structure. In the case where the adhesive layer 22 on the substrate 21 is UV-curable as described below, the substrate 21 is preferably UV-transparent. When the substrate 21 includes a plastic film, it may be an unstretched film, a uniaxially stretched film, or a biaxially stretched film.

In the case where the cut crystal sticky film X is used by shrinking the cut crystal band 20 or the substrate 21 by, for example, partial heating, the substrate 21 is preferably heat-shrinkable. When the substrate 21 includes a plastic film, it is preferable that the substrate 21 is a biaxially stretched film in terms of achieving isotropic thermal shrinkage of the dicing tape 20 or the substrate 21. The heat shrinkage rate of the dicing tape 20 or the substrate 21 obtained by the heat treatment test under the conditions of a heating temperature of 100 ° C. and a heat treatment time of 60 seconds is preferably 2 to 30%, and more preferably 2 to 25%. , More preferably 3 to 20%, more preferably 5 to 20%. The thermal shrinkage rate refers to at least one of a thermal shrinkage rate in a so-called MD (Machine Direction) direction and a thermal shrinkage rate in a TD (Transverse Direction) direction.

The surface on the side of the adhesive layer 22 of the base material 21 may be subjected to a physical treatment, a chemical treatment, or a primer treatment to improve the adhesion with the adhesive layer 22. Examples of the physical treatment include a corona treatment, a plasma treatment, a sand matte processing treatment, an ozone exposure treatment, a flame exposure treatment, a high-voltage electric shock exposure treatment, and an ionizing radiation treatment. Examples of the chemical treatment include a chromic acid treatment.

The thickness of the substrate 21 is preferably 40 μm or more from the viewpoint of ensuring the strength for the substrate 21 to function as a support in the cut crystal band 20 or the cut crystal sticky film X. It is 50 μm or more, more preferably 55 μm or more, and even more preferably 60 μm or more. In addition, from the viewpoint of achieving moderate flexibility in the dicing tape 20 or the dicing die-bonding film X, the thickness of the substrate 21 is preferably 200 μm or less, more preferably 180 μm or less, and even more preferably 150. μm or less.

The adhesive layer 22 of the dicing tape 20 contains an adhesive. The adhesive can be an adhesive that can intentionally reduce the adhesive force by an external action during the use of the cut crystal adhesive film X (adhesive with a reduced adhesive force), or can be used for the cut crystal Adhesive (the non-reduced adhesive) whose adhesion is hardly or completely reduced by external action during the use of the crystal film X. Regarding the use of a pressure-reducible or non-reducible pressure-sensitive adhesive as the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 22, a singulated semiconductor wafer can be singulated according to the use of a cut crystal film X. The method or condition of the cut crystal film X is appropriately selected.

In the case of using an adhesive with reduced adhesive force as the adhesive in the adhesive layer 22, during the use of the cut crystal adhesive film X, the adhesive layer 22 can be used separately to show a relatively high adhesive state. It shows a relatively low adhesion state. For example, when using the cut crystal adhesive film X in the following expansion step, in order to suppress or prevent the adhesive film 10 from rising or peeling from the adhesive layer 22, the state of high adhesive force of the adhesive layer 22 is used here. Then, in the following picking step of picking the semiconductor wafer with the sticky crystal film from the die-cutting tape 20 of the self-cutting die-bond film X, in order to easily pick the semiconductor wafer with the sticky film from the adhesive layer 22, The low adhesive state of the adhesive layer 22 is utilized.

Examples of such adhesives capable of reducing the adhesive force include, for example, adhesives (radiation-curable adhesives) or heat-foaming adhesives that can be hardened by radiation during use of the cut crystal adhesive film X. Wait. In the adhesive layer 22 of this embodiment, one type of adhesive capable of reducing adhesive force may be used, or two or more types of adhesive capable of reducing adhesive force may be used. In addition, the entirety of the adhesive layer 22 may be formed by a pressure-reducible adhesive, or a part of the pressure-sensitive adhesive layer 22 may be formed by a pressure-reducible adhesive. For example, in the case where the adhesive layer 22 has a single-layer structure, the entirety of the adhesive layer 22 may be formed by a pressure-reducible adhesive, or a specific portion of the adhesive layer 22 may be formed by a pressure-reducible adhesive ( For example, as the center region of the bonding target region of the workpiece), other parts are formed by the non-reduced adhesive (for example, the bonding target region of the ring frame is a region outside the center region). When the adhesive layer 22 has a multilayer structure, all layers constituting the multilayer structure may be formed by a pressure-reducible adhesive, or a part of the multilayer structure may be formed by a pressure-reducible adhesive.

Examples of the radiation-curable adhesive used for the adhesive layer 22 include adhesives of a type which hardens by irradiation with electron beam, ultraviolet rays, α rays, β rays, γ rays, or X rays, and are particularly preferably used. A type of adhesive (ultraviolet-curing adhesive) that is hardened by ultraviolet irradiation.

Examples of the radiation-curable adhesive used for the adhesive layer 22 include, as an acrylic adhesive, a radiation containing a basic polymer such as an acrylic polymer and a functional group such as a carbon-carbon double bond having radiation polymerizability. Additive type radiation hardening adhesive for polymerizable monomer component or oligomer component.

The acrylic polymer preferably contains the largest number of monomer units derived from a (meth) acrylate in a mass ratio. The (meth) acrylic acid ester as a monomer unit for forming an acrylic polymer, that is, the (meth) acrylic acid ester as a constituent monomer of the acrylic polymer, for example, an (meth) acrylic acid alkyl ester , (Meth) acrylic acid cycloalkyl esters, and (meth) acrylic acid aryl esters, and more specifically, the same as those described above with respect to the acrylic resin used for the adhesive film 10 (A Based) acrylate. As a constituent monomer of the acrylic polymer, one (meth) acrylate may be used, or two or more (meth) acrylates may be used. As a constituent monomer of an acrylic polymer, 2-ethylhexyl acrylate and lauryl acrylate are preferable. In addition, in terms of allowing the adhesive layer 22 to appropriately exhibit basic characteristics such as adhesion by the (meth) acrylate, the proportion of the (meth) acrylate in the entire constituent monomer of the acrylic polymer is better. It is 40% by mass or more, and more preferably 60% by mass or more.

The acrylic polymer may contain, for example, one kind or two or more kinds of other monomers copolymerizable with the (meth) acrylate in the constituent monomers in order to improve the cohesive force or heat resistance. Examples of such a monomer include a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, an epoxy group-containing monomer, a sulfonic acid group-containing monomer, a phosphate group-containing monomer, and propylene. The amine and acrylonitrile are, more specifically, the same copolymerizable monomers as those described above for the acrylic resin used in the adhesive film 10.

The acrylic polymer may contain a monomer unit derived from a polyfunctional monomer capable of copolymerizing with a monomer component such as a (meth) acrylate in order to form a crosslinked structure in its polymer skeleton. Examples of such a polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, Neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (methyl) Acrylate, poly (meth) acrylate glycidyl, polyester (meth) acrylate, and (meth) acrylate urethane. "(Meth) acrylate" means "acrylate" and / or "methacrylate". As a constituent monomer of the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. The proportion of the polyfunctional monomer in the entire constituent monomers of the acrylic polymer is preferably 40 mass in terms of allowing the adhesive layer 22 to appropriately exhibit basic characteristics such as adhesion by (meth) acrylate. % Or less, more preferably 30% by mass or less.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming the acrylic polymer. Examples of the polymerization method include solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization. From the viewpoint of high cleanliness in the method for manufacturing a semiconductor device using the dicing tape 20 or the dicing die film X, it is preferably one of the adhesive layer 22 in the dicing tape 20 or the dicing die film X. There are few low molecular weight substances, so the number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3 million.

The pressure-sensitive adhesive layer 22 or the pressure-sensitive adhesive used to form the pressure-sensitive adhesive layer 22 may increase the number-average molecular weight of a base polymer such as an acrylic polymer, and may contain, for example, an external crosslinking agent. Examples of the external crosslinking agent used to react with a base polymer such as an acrylic polymer to form a crosslinking structure include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents. The content of the external crosslinking agent in the adhesive layer 22 or the adhesive used to form it is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the base polymer.

Examples of the radiation-polymerizable monomer component for forming a radiation-curable adhesive include (meth) acrylic acid urethane, trimethylolpropane tri (meth) acrylate, and pentaerythritol tris (methyl) Acrylate), pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate . Examples of the radiation-polymerizable oligomer component for forming the radiation-curable adhesive include various types such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based. The oligomer is preferably one having a molecular weight of about 100 to 30,000. The total content of the radiation-polymerizable monomer component or oligomer component in the radiation-curable adhesive is determined within a range in which the adhesive force of the formed adhesive layer 22 can be appropriately reduced, compared to the basis of acrylic polymers and the like The polymer is 100 parts by mass, preferably 5 to 500 parts by mass, and more preferably 40 to 150 parts by mass. In addition, as the additive type radiation-curable adhesive, for example, those disclosed in Japanese Patent Laid-Open No. Sho 60-196956 can be used.

Examples of the radiation-hardening adhesive used for the adhesive layer 22 include functional groups such as carbon-carbon double bonds contained in the polymer side chain or the polymer main chain, and having polymerizable carbon-carbon double bonds at the ends of the polymer main chain. Radiation-hardening adhesive based on the base polymer. Such an internal radiation-hardening adhesive is suitable for suppressing unexpected changes in the adhesive properties over time due to the movement of low-molecular-weight components in the formed adhesive layer 22.

As the base polymer contained in the internal radiation-curable adhesive, an acrylic polymer is preferably used as a basic skeleton. As the acrylic polymer forming such a basic skeleton, the above-mentioned acrylic polymer can be used. Examples of a method for introducing a radiation-polymerizable carbon-carbon double bond into an acrylic polymer include a method of copolymerizing a raw material monomer containing a monomer having a specific functional group (first functional group) to obtain an acrylic polymer. After polymerizing, a compound having a specific functional group (second functional group) capable of reacting with the first functional group to be bonded and a radiation polymerizable carbon-carbon double bond is polymerized while maintaining the carbon-carbon double bond by radiation. Condensation reaction or addition reaction is performed on the acrylic polymer in a stable state.

Examples of the combination of the first functional group and the second functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridinyl group, an aziridinyl group and a carboxyl group, a hydroxyl group and an isocyanate group, Isocyanate and hydroxyl. Among these combinations, a combination of a hydroxyl group and an isocyanate group or a combination of an isocyanate group and a hydroxyl group is preferable from the viewpoint of easiness of reaction tracking. In addition, it is technically difficult to produce a polymer having a highly reactive isocyanate group. Therefore, from the standpoint of ease of production or acquisition of an acrylic polymer, the above-mentioned acrylic polymer side is more preferable. When the first functional group is a hydroxyl group and the second functional group is an isocyanate group. In this case, as an isocyanate compound having a radiation polymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, an isocyanate compound containing a radiation polymerizable unsaturated functional group, for example: Propylene fluorenyl isocyanate, 2-methacryl methoxyethyl isocyanate (MOI), and m-isopropenyl-α, α-dimethylbenzyl isocyanate.

The radiation-curable adhesive used for the adhesive layer 22 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-keto alcohol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, and dibenzene Ketone compounds, 9-oxosulfur Compounds, camphorquinone, haloketone, fluorenylphosphine oxide and fluorenyl phosphate. Examples of the α-keto alcohol-based compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylphenethyl Ketones, 2-methyl-2-hydroxyphenylacetone and 1-hydroxycyclohexylphenyl ketone. Examples of the acetophenone-based compound include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, and 2,2-diethoxybenzene. Ethyl ketone and 2-methyl-1- [4- (methylthio) -phenyl] -2-𠰌 Examples of the benzoin ether-based compound include benzoin ethyl ether, benzoin isopropyl ether, and anisole methyl ether. Examples of the ketal-based compound include benzophenone dimethyl ketal. Examples of the aromatic sulfonyl chloride-based compound include 2-naphthalenesulfonyl chloride. Examples of the photoactive oxime-based compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of the benzophenone-based compound include benzophenone, benzophenone benzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. As 9-oxysulfur Examples of compounds are 9-oxysulfur , 2-chloro-9-oxysulfur 2-methyl-9-oxysulfur 2,4-dimethyl-9-oxysulfur Isopropyl-9-oxysulfur , 2,4-dichloro-9-oxysulfur , 2,4-diethyl-9-oxysulfur And 2,4-diisopropyl-9-oxysulfur . The content of the photopolymerization initiator in the radiation-curable adhesive in the adhesive layer 22 is, for example, 0.05 to 20 parts by mass based on 100 parts by mass of the base polymer such as an acrylic polymer.

The above-mentioned heat-foamable adhesive for the adhesive layer 22 is an adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the thermally expandable microspheres include microspheres in which a substance that is easily vaporized and expanded by heating is enclosed in a shell. Examples of the inorganic foaming agent include ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium borohydride, and azides. Examples of the organic blowing agent include chlorofluoroalkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azobisisobutyronitrile, azodimethylformamide, and barium azodicarboxylate. Series compounds; hydrazine such as p-toluenesulfonylhydrazine or diphenylsulfonium-3,3'-disulfonylhydrazine, 4,4'-oxybis (benzenesulfonylhydrazine), allylbis (sulfonylhydrazine) Compounds; p-tolylsulfonyl hemiprazine or 4,4'-oxybis (benzenesulfonyl hemiprazine) and other hemazide compounds; 5-thio 𠰌 phosphono-1,2, Triazole compounds such as 3,4-thiotriazole and N, N'-dinitrosopentamethylenetetramine or N, N'-dimethyl-N, N'-dinitroso-p-benzene N-nitroso compounds such as dimethylamine. Examples of the substance that can be easily vaporized and expanded by heating when the heat-expandable microspheres are formed as described above include isobutane, propane, and pentane. By encapsulating a substance that can be easily vaporized and expanded by heating into a shell-forming substance by a coacervation method or an interfacial polymerization method, a thermally expandable microsphere can be produced. As the shell-forming substance, a substance that exhibits thermal melting properties or a substance that can be broken by the thermal expansion of the enclosed substance can be used. Examples of such a substance include a vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polyfluorene.

Examples of the non-reducible adhesive agent include, for example, an adhesive in a form in which the radiation-curable adhesive agent described above with respect to the adhesive force-reducible adhesive agent is hardened by irradiation with radiation in advance, or a pressure-sensitive adhesive agent. Adhesives, etc. Radiation hardening adhesives can show the adhesiveness caused by the polymer component even when the adhesive strength is reduced by radiation hardening according to the type and content of the polymer component contained in it, which can be used in a specific state Down play can be used for adhesion to maintain the adhesion of the adherend. In the adhesive layer 22 of this embodiment, one type of non-reducing adhesive may be used, or two or more types of non-reducing adhesive may be used. In addition, the entirety of the adhesive layer 22 may be formed by a non-reduced adhesive, or a part of the adhesive layer 22 may be formed by a non-reduced adhesive. For example, when the adhesive layer 22 has a single-layered structure, the entirety of the adhesive layer 22 may be formed by a non-reduced adhesive, or as described above, the adhesive layer 22 may be formed by the non-reduced adhesive. For specific parts (for example, the bonding target area of the ring frame and the area outside the bonding target area of the wafer), other parts (such as the bonding of the wafer) are formed by the adhesive with a reduced adhesive force. The center area of the target area). When the adhesive layer 22 has a multi-layered structure, all layers constituting the multi-layered structure may be formed from a non-reduced adhesive, or a part of the multi-layered structure may be formed from the non-reduced adhesive.

On the other hand, as the pressure-sensitive adhesive used for the adhesive layer 22, for example, an acrylic adhesive based on an acrylic polymer or a rubber-based adhesive can be used. When the adhesive layer 22 contains an acrylic adhesive as a pressure-sensitive adhesive, the acrylic polymer as the base polymer of the acrylic adhesive preferably contains (meth) acrylic acid in a proportion by mass. The ester has the most monomer units. Examples of such an acrylic polymer include the acrylic polymer described above with respect to the radiation-curable adhesive.

The adhesive layer 22 or the adhesive used to form it may contain, in addition to the above components, a cross-linking accelerator, an adhesion imparting agent, an anti-aging agent, a colorant such as a pigment or a dye, and the like. The colorant may be a compound that is colored by radiation. Examples of such compounds include leuco dyes.

The thickness of the adhesive layer 22 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and even more preferably 5 to 25 μm. Such a structure is suitable, for example, in a case where the adhesive layer 22 contains a radiation-curable adhesive, and the balance of the adhesion force of the adhesive layer 22 to the viscous crystal film 10 before and after radiation hardening is obtained.

The cut-to-size die-bonding film X having the structure described above can be produced, for example, as follows.

In the production of the die-bonding film 10 of the die-cutting die-bonding film X, first, an adhesive composition for forming the die-bonding film 10 is prepared, and then the composition is coated on a specific separator to form an adhesive composition layer. . Examples of the separator include a polyethylene terephthalate (PET) film, a polyethylene film, and a polypropylene film, and a surface is subjected to a release agent such as a fluorine-based release agent or an acrylic long-chain alkyl ester-based release agent. Coated plastic film or paper. Examples of the method for applying the adhesive composition include roll coating, screen coating, and gravure coating. Next, in the adhesive composition layer, it is dried by heating if necessary, and a crosslinking reaction is caused if necessary. The heating temperature is, for example, 70 to 160 ° C, and the heating time is, for example, 1 to 5 minutes. As described above, the above-mentioned adhesive film 10 can be produced in a form with a spacer.

The dicing tape 20 of the dicing die-bonding film X can be produced by providing an adhesive layer 22 on the prepared substrate 21. For example, the substrate 21 made of resin can be produced by a calendering method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a coextrusion method, or a dry lamination method. It is produced by a film forming method. If necessary, a specific surface treatment is performed on the film or substrate 21 after film formation. In the formation of the adhesive layer 22, for example, after preparing an adhesive composition for forming an adhesive layer, first, the composition is coated on a substrate 21 or a specific spacer to form an adhesive composition layer. . Examples of the coating method of the adhesive composition include roll coating, screen coating, and gravure coating. Next, in this adhesive composition layer, by heating, it is dried as needed, and a crosslinking reaction is caused as needed. The heating temperature is, for example, 80 to 150 ° C, and the heating time is, for example, 0.5 to 5 minutes. When the adhesive layer 22 is formed on the separator, the adhesive layer 22 with the separator attached to the base material 21 is then peeled off. Thereby, the above-mentioned dicing tape 20 having a laminated structure of the substrate 21 and the adhesive layer 22 is manufactured.

In the production of the cut crystal sticky film X, secondly, on the adhesive layer 22 side of the cut crystal band 20, for example, the sticky film 10 is crimped and bonded. The bonding temperature is, for example, 30 to 50 ° C, and preferably 35 to 45 ° C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm, and preferably 1 to 10 kgf / cm. When the adhesive layer 22 contains the radiation hardening adhesive as described above, the adhesive layer 22 may be irradiated with radiation such as ultraviolet rays before the bonding, or the adhesive may be applied to the adhesive from the substrate 21 side after the bonding. The layer 22 is irradiated with radiation such as ultraviolet rays. Alternatively, such a radiation irradiation may not be performed during the manufacturing process of the cut crystal film X (in this case, the adhesive layer 22 may be hardened by radiation during the use of the cut crystal film X). In the case where the adhesive layer 22 is an ultraviolet-curable adhesive layer, the ultraviolet irradiation amount for curing the adhesive layer 22 is, for example, 50 to 500 mJ / cm ² , and preferably 100 to 300 mJ / cm ² . The irradiated area (irradiated area R), which is the measure for reducing the adhesive force of the adhesive layer 22 in the cut crystal adhesive film X, is, for example, as shown in FIG. 1, the area in the adhesive region of the adhesive film 22 Except the area around the periphery.

The dicing die-bonding film X can be produced in the above manner. A spacer (not shown) may be provided on the die-cutting viscous film X on the side of the viscous film 10 so as to cover at least the viscous film 10. When the adhesive film 10 is smaller in size than the adhesive layer 22 of the dicing tape 20 and there is an area in the adhesive layer 22 where the adhesive film 10 is not attached, for example, the separator may be covered at least with the adhesive film 10 And the configuration of the adhesive layer 22. The separator is a component for protecting at least the adhesive film 10 or the adhesive layer 22 from being exposed, and is peeled from the film when the cut crystal adhesive film X is used.

2 to 8 show a method for manufacturing a semiconductor device according to an embodiment of the present invention.

In this semiconductor device manufacturing method, first, as shown in FIGS. 2 (a) and 2 (b), a dividing groove 30 a is formed on a semiconductor wafer W (dividing groove forming step). The semiconductor wafer W includes a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements have been formed on the first surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held by the wafer processing tape T1 and used. A rotary cutter such as a dicing apparatus forms a division groove 30a of a specific depth on the first surface Wa side of the semiconductor wafer W. The dividing groove 30a is a space for separating the semiconductor wafer W into a semiconductor wafer unit (the dividing groove 30a is schematically represented by a thick solid line in FIGS. 2 to 4).

Next, as shown in FIG. 2 (c), the wafer processing tape T2 having the adhesive surface T2a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is from the semiconductor wafer W. Of stripping.

Next, as shown in FIG. 2 (d), while the semiconductor wafer W is held by the wafer processing tape T2, the semiconductor wafer W is thinned to a specific thickness by grinding processing from the second surface Wb. Thickness (wafer thinning step). The grinding processing can be performed using a grinding processing apparatus equipped with a grinding stone. Through this wafer thinning step, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor wafers 31 is formed in this embodiment. As the semiconductor wafer 30A, specifically, the wafer has a portion (connection portion) that connects a portion that is singulated into a plurality of semiconductor wafers 31 on the second surface Wb side. The thickness of the connecting portion of the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the end of the second surface Wb side of the dividing groove 30a is, for example, 1 to 30 μm, and preferably 3 to 20 μm. .

Next, as shown in FIG. 3 (a), the semiconductor wafer 30A held by the wafer processing tape T2 is bonded to the die-bond film 10 of the die-bond film X. Thereafter, as shown in FIG. 3 (b), the wafer processing tape T2 is peeled from the semiconductor wafer 30A. In the case where the adhesive layer 22 of the dicing die-bonding film X is a radiation-hardening adhesive layer, the adhesive layer 22 may be irradiated with ultraviolet rays from the substrate 21 side after the semiconductor wafer 30A is bonded to the adhesive film 10 Iso-irradiation replaces the above-mentioned radiation irradiation during the manufacturing process of the cut-to-slice cement film X. The irradiation dose is, for example, 50 to 500 mJ / cm ² , and preferably 100 to 300 mJ / cm ² . The irradiation region (irradiated region R shown in FIG. 1) where the adhesive force reduction measure of the adhesive layer 22 is irradiated in the cut crystal adhesive film X is, for example, removal in the bonding region of the adhesive film 22 of the adhesive layer 22 Areas other than the periphery.

Next, after attaching the ring frame 41 to the die-bonding film 10 of the die-bonding film X, as shown in FIG. 4 (a), the die-bonding film X with the semiconductor wafer 30A is fixed to the expansion device.之 keeper 42.

Next, as shown in FIG. 4 (b), the first expansion step (cold expansion step) is performed under relatively low temperature conditions, the semiconductor wafer 30A is singulated into a plurality of semiconductor wafers 31, and the die-cut die-bond film is formed. The sticky crystal film 10 of X is cut into small pieces of sticky film 11 to obtain a semiconductor wafer 31 with a sticky film. In this step, the hollow cylinder-shaped jacking member 43 provided in the expansion device abuts on the dicing tape 20 on the lower side of the dicing die-bond film X in the figure, and raises it, so that a semiconductor wafer is bonded. The dicing tape 20 of the dicing die-bonding film X of 30A is extended in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is performed under the condition that a tensile stress of, for example, 15 to 32 MPa is generated in the dicing tape 20. The temperature condition of the cold expansion step is, for example, 0 ° C or lower, preferably -20 to -5 ° C, more preferably -15 to -5 ° C, and even more preferably -15 ° C. The expansion speed (the speed at which the jacking member 43 rises) in the cold expansion step is, for example, 0.1 to 100 mm / sec. The expansion amount of the cold expansion step is, for example, 3 to 16 mm.

In this step, the semiconductor wafer 30A is cut at a thin-walled and easily fractured portion, and is singulated into a semiconductor wafer 31. Further, in this step, in the adhesive film 10 in close contact with the adhesive layer 22 of the expanded dicing tape 20, deformation is suppressed in each region in which the semiconductor wafers 31 are in close contact. On the other hand, in contact with the semiconductor In a portion where the divided grooves between the wafers 31 are opposed to each other, the tensile stress generated by the dicing tape 20 functions in a state where such deformation suppression is not generated. As a result, the portion of the die-bond film 10 facing the division groove between the semiconductor wafer 31 is cut. After this step, as shown in FIG. 4 (c), the jacking member 43 is lowered, and the expanded state of the dicing tape 20 is released.

Next, as shown in FIG. 5 (a), a second expansion step is performed under a relatively high temperature condition, thereby widening the distance (spacing distance) between the semiconductor wafers 31 with an adhesive crystal film. In this step, the hollow cylinder-shaped jacking member 43 provided in the expansion device is raised again to expand the dicing tape 20 of the dicing die-bonding film X. The temperature condition in the second expansion step is, for example, 10 ° C or higher, and preferably 15 to 30 ° C. The expansion speed (speed at which the jacking member 43 rises) in the second expansion step is, for example, 0.1 to 10 mm / sec. The expansion amount in the second expansion step is, for example, 3 to 16 mm. In this step, the separation distance of the semiconductor wafer 31 with a sticky crystal film is widened to the extent that the semiconductor wafer 31 with a sticky crystal film can be appropriately picked from the dicing tape 20 by the following picking step. After this step, as shown in FIG. 5 (b), the jacking member 43 is lowered, and the expanded state of the dicing tape 20 is released. In terms of suppressing the separation distance of the semiconductor wafer 31 with a sticky crystal film on the dicing tape 20 from shrinking after the expansion state is released, it is preferable to hold the semiconductor wafer 31 holding area of the dicing tape 20 before the expansion state is released. The outer part is heated to shrink it.

Secondly, after a cleaning step of cleaning the semiconductor wafer 31 side of the dicing tape 20 of the semiconductor wafer 31 with an adhesive film using a cleaning solution such as water, as shown in FIG. 6, the semiconductor with the adhesive film is cleaned. The wafer 31 is picked up from the dicing tape 20 (pickup step). For example, on the lower side in the figure of the dicing tape 20, the pin member 44 of the pickup mechanism is raised, and the semiconductor wafer 31 with the adhesive crystal film picked up is picked up via the dicing tape 20. And adsorption remains. In the picking-up step, the jacking speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the jacking amount of the pin member 44 is, for example, 50 to 3000 μm.

Next, as shown in FIGS. 7 (a) and 7 (b), the semiconductor wafer 31 with an adhesive crystal film is temporarily fixed on the mounting substrate 51. This temporary fixing is performed by embedding the semiconductor wafer 31 ′ on the mounting substrate 51 and the like by the die attach film 11 attached to the semiconductor wafer 31. Examples of the mounting substrate 51 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring substrate. The semiconductor wafer 31 ′ is fixed to the mounting substrate 51 via an adhesive layer 52. An electrode pad (not shown) of the semiconductor wafer 31 ′ and a terminal portion (not shown) included in the mounting substrate 51 are electrically connected via a bonding wire 53. As the bonding wire 53, for example, a gold wire, an aluminum wire, or a copper wire can be used. In this step, the entirety of the semiconductor wafer 31 ′ and the bonding wire 53 connected to the semiconductor wafer 31 ′ which are thus wire-bonded and embedded are buried in the die-attach film 11 attached to the semiconductor wafer 31. In this step, in order to make the semiconductor wafer 31 ′ and the bonding wire 53 easily squeeze into the die-bond film 11, the die-bond film 11 may be heated and softened. The heating temperature is a temperature at which the viscous crystal film 11 does not reach a completely thermally cured state, for example, 80 to 140 ° C.

Next, as shown in FIG. 7 (c), the viscous crystal film 11 is hardened by heating (thermal curing step). In this step, the heating temperature is, for example, 100 to 200 ° C., and the heating time is, for example, 0.5 to 10 hours. After this step, an adhesive layer is formed by thermally curing the adhesive film 11. This adhesive layer is a semiconductor wafer 31 ′ (first semiconductor wafer) that is wire-bonded and mounted on the mounting substrate 51 together with the entire bonding wire 53 connected thereto, and the semiconductor wafer 31 is bonded to the mounting substrate 51. .

Next, as shown in FIG. 8 (a), an electrode pad (not shown) of the semiconductor wafer 31 and a terminal portion (not shown) included in the mounting substrate 51 are electrically connected via a bonding wire 53 (a wire bonding step). The wiring between the electrode pad of the semiconductor wafer 31 and the bonding wire 53 and the wiring between the terminal portion of the mounting substrate 51 and the bonding wire 53 are realized by ultrasonic welding with heating. The heating temperature of the wire during wire bonding is, for example, 80 to 250 ° C, and the heating time is, for example, several seconds to several minutes. Such a wire bonding step may be performed before the above-mentioned thermosetting step.

Next, as shown in FIG. 8 (b), a sealing resin 54 is formed to seal the semiconductor wafer 31 and the like on the mounting substrate 51 (sealing step). In this step, the sealing resin 54 is formed, for example, by a transfer molding technique using a mold. As a constituent material of the sealing resin 54, an epoxy resin is mentioned, for example. In this step, the heating temperature for forming the sealing resin 54 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. In the case where the sealing resin 54 is not sufficiently hardened in this step, a post-hardening step is performed after this step to completely harden the sealing resin 54 by further heat treatment. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C, and the heating time is, for example, 0.5 to 8 hours. Referring to FIG. 7 (c), even when the die-bond film 11 is not completely thermally cured in the above steps, the die-bond film 11 and the sealing resin 54 can be completely thermally cured together in the sealing step or the post-hardening step.

As described above, a plurality of semiconductor devices in which a plurality of semiconductor wafers are mounted can be manufactured. In the present embodiment, the entirety of the semiconductor wafer 31 ′ and the bonding wire 52 connected to the semiconductor wafer 31 ′ is embedded in an adhesive layer formed by curing the adhesive film 11. In contrast, a part of the semiconductor wafer 31 ′ and the semiconductor wafer 31 ′ side of the bonding wire 52 connected to the semiconductor wafer 31 ′ may be buried in an adhesive layer hardened by the adhesive film 11. In this embodiment, as shown in FIG. 9, for example, a semiconductor wafer 31 ′ mounted on a flip chip may be used instead of the semiconductor wafer 31 ′ mounted on a wire bond. The semiconductor wafer 31 ′ shown in FIG. 9 is electrically connected to the mounting substrate 51 via the bump 55. The semiconductor wafer 31 ′ and the mounting substrate 51 are filled with an underfill 56 and are thermally cured. In the semiconductor device shown in FIG. 9, an adhesive layer formed by thermally curing the die-bond film 11 is embedded in a semiconductor wafer 31 ′ (the first semiconductor wafer) mounted on the mounting substrate 51 and mounted on the mounting substrate 51. The semiconductor wafer 31 (the second semiconductor wafer) is bonded on top.

10 and 11 show steps of a part of another embodiment of the method for manufacturing a semiconductor device according to the present invention. In this embodiment, first, as shown in FIGS. 10 (a) and 10 (b), the semiconductor wafer 31 with an adhesive crystal film is temporarily fixed to the semiconductor wafer 31 ′ mounted on the mounting substrate 51 by wire bonding. . The semiconductor wafer 31 ′ is fixed to the mounting substrate 51 via an adhesive layer 52. An electrode pad (not shown) of the semiconductor wafer 31 ′ and a terminal portion (not shown) included in the mounting substrate 51 are electrically connected via a bonding wire 53. In this step, the connection portion of the bonding wire 53 of the semiconductor wafer 31 ′ that is wire-bonded and mounted in this way is covered with the die-bonding film 11, and a part of the bonding wire 53 is embedded in the die-bonding film 11. In addition, in this step, in order to make the bonding wire 53 easily squeeze into the die-bonding film 11, the die-bonding film 11 may be heated and softened. The heating temperature is a temperature at which the viscous crystal film 11 does not reach a completely thermally cured state, for example, 80 to 140 ° C.

Next, as shown in FIG. 10 (c), the viscous crystal film 11 is hardened by heating (thermal curing step). In this step, the heating temperature is, for example, 100 to 200 ° C., and the heating time is, for example, 0.5 to 10 hours. After this step, an adhesive layer is formed by thermally curing the adhesive film 11. This adhesive layer covers the connection portion of the bonding wire 53 of the semiconductor wafer 31 ′ that is wire-bonded and mounted on the mounting substrate 51. A part of the bonding wire 53 is embedded and the semiconductor wafer is bonded to the semiconductor wafer 31 ′ (the first semiconductor wafer). 31 (second semiconductor wafer).

Next, as shown in FIG. 11 (a), an electrode pad (not shown) of the semiconductor wafer 31 and a terminal portion (not shown) included in the mounting substrate 51 are electrically connected via a bonding wire 53 (a wire bonding step). The wiring between the electrode pad of the semiconductor wafer 31 and the bonding wire 53 and the wiring between the terminal portion of the mounting substrate 51 and the bonding wire 53 are realized by ultrasonic welding with heating. The heating temperature of the wire during wire bonding is, for example, 80 to 250 ° C, and the heating time is, for example, several seconds to several minutes. Such a wire bonding step may be performed before the above-mentioned thermosetting step of the present embodiment.

Next, as shown in FIG. 11 (b), a sealing resin 54 is formed to seal the semiconductor wafers 31, 31 'and the bonding wires 53 on the mounting substrate 51 (sealing step). In this step, the heating temperature for forming the sealing resin 54 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. In the case where the sealing resin 54 is not sufficiently hardened in this step, a post-hardening step is performed after this step to completely harden the sealing resin 54 by further heat treatment. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C, and the heating time is, for example, 0.5 to 8 hours. Referring to FIG. 10 (c), even when the die-bond film 11 is not completely thermally hardened in the above steps, the die-bond film 11 and the sealing resin 54 can be completely heat-hardened together in the sealing step or the post-hardening step.

As described above, a plurality of semiconductor devices in which a plurality of semiconductor wafers are mounted can be manufactured.

In the semiconductor device manufacturing method of the present invention, the wafer thinning step shown in FIG. 12 may be performed instead of the wafer thinning step described with reference to FIG. 2 (d). After going through the above process with reference to FIG. 2 (c), in the wafer thinning step shown in FIG. 12, the semiconductor wafer W is held by the wafer processing tape T2, and is passed from the second surface Wb. The wafer is thinned to a specific thickness by grinding, and a semiconductor wafer segment 30B including a plurality of semiconductor wafers 31 and held by the wafer processing tape T2 is formed. In this step, a method of grinding the wafer until the dividing groove 30a itself is exposed on the second surface Wb side (the first method) may be adopted, or the following method may be adopted: the wafer is ground from the second surface Wb side Until the division groove 30a is reached shortly, a crack is generated between the division groove 30a and the second surface Wb by the pressing force of the self-rotating grinding stone on the wafer to form a semiconductor wafer division 30B (second method) ). According to the method used, the depth of the dividing groove 30a formed as described above with reference to Figs. 2 (a) and 2 (b) from the first surface Wa is appropriately determined. In FIG. 12, the division groove 30 a passing the first method or the division groove 30 a passing the second method and the cracks connected to the division groove 30 a are shown in thick solid lines. After the semiconductor wafer split body 30B thus produced can be bonded to the dicing die attach film X instead of the semiconductor wafer 30A, the above steps can be performed with reference to FIGS. 3 to 6.

13 (a) and 13 (b) show the first expansion step (cold expansion step) performed after the semiconductor wafer split body 30B is bonded to the dicing die-bond film X in detail. In this step, the hollow cylinder-shaped jacking member 43 provided in the expansion device abuts on the dicing tape 20 on the lower side of the dicing die-bond film X in the figure, and raises it, so that a semiconductor wafer is bonded. The dicing tape 20 of the dicing die-bonding film X of 30B is extended in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer segment 30B. This expansion is performed under the condition that a tensile stress of, for example, 1 to 100 MPa is generated in the dicing tape 20. The temperature condition in this step is, for example, 0 ° C or lower, preferably -20 to -5 ° C, more preferably -15 to -5 ° C, and even more preferably -15 ° C. The expansion speed (speed at which the jacking member 43 rises) in this step is, for example, 1 to 500 mm / sec. The expansion amount in this step is, for example, 50 to 200 mm. Through this cold expansion step, the die-bond film 10 of the die-bond die film X is cut into small pieces of the die-bond film 11 to obtain a semiconductor wafer 31 with a die-bond film. Specifically, in this step, the adhesive film 10 in close contact with the adhesive layer 22 of the expanded dicing tape 20 is deformed in each region in which the semiconductor wafers 31 of the semiconductor wafer segment 30B are in close contact. Suppression, on the other hand, the tensile stress generated by the dicing tape 20 functions in a portion facing the division groove 30a with the semiconductor wafer 31 in a state where such a deformation suppression effect is not generated. As a result, the portion of the die-bond film 10 facing the division groove 30 a between the semiconductor wafer 31 is cut. The thus-obtained semiconductor wafer 31 with a viscous crystal film is subjected to the above-mentioned picking step with reference to FIG. 6 and is then supplied to a mounting step in a semiconductor device manufacturing process.

In the method for manufacturing a semiconductor device of the present invention, a semiconductor wafer 30C manufactured as follows can be bonded to the dicing die-bonding film X instead of bonding the semiconductor wafer 30A or the semiconductor wafer split 30B to the dicing die-bonding The above-mentioned structure of the crystal film X.

In manufacturing the semiconductor wafer 30C, first, as shown in FIGS. 14 (a) and 14 (b), a modified region 30 b is formed in the semiconductor wafer W. The semiconductor wafer W includes a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements have been formed on the first surface Wa. In this step, the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, and the semiconductor wafer W is held by the wafer processing tape T3, so that The laser beam with the light-concentrating point aligned inside the wafer is irradiated from the opposite side of the wafer processing tape T3 to the semiconductor wafer W along its predetermined division line, and is etched into the semiconductor wafer W by the ablation using multiphoton absorption. A modified region 30b is formed. The modified region 30b is used to separate the semiconductor wafer W into a weakened region of the semiconductor wafer unit. A method of forming a modified region 30b on a predetermined division line by laser light irradiation in a semiconductor wafer is described in detail in, for example, Japanese Patent Laid-Open No. 2002-192370, but the laser light irradiation conditions of this embodiment For example, it is appropriately adjusted within the range of the following conditions. ＜ Laser light irradiation conditions ＞ (A) Laser light laser light source Semiconductor laser excitation Nd: YAG laser wavelength 1064 nm Laser spot cross-section area 3.14 × 10 ^-8 cm ² Oscillation mode Q switching pulse repetition frequency 100 kHz or less Pulse width Laser light quality TEM00 below 1 μs output TEM00 Polarization characteristics Linear polarization (B) Condensing lens magnification 100 times or less NA 0.55 Transmittance to laser light wavelength 100% or less (C) For mounting stage for mounting semiconductor substrates Movement speed below 280 mm / s

Next, while the semiconductor wafer W is held by the wafer processing tape T3, the semiconductor wafer W is ground from the second surface Wb to be thinned to a specific thickness, as shown in FIG. 14 (c). As shown, a semiconductor wafer 30C that can be singulated into a plurality of semiconductor wafers 31 is formed (wafer thinning step). After the semiconductor wafer 30C manufactured as described above is bonded to the cut die bonding film X instead of the semiconductor wafer 30A, the above steps are performed with reference to FIGS. 3 to 6.

15 (a) and 15 (b) show the first expansion step (cold expansion step) performed after bonding the semiconductor wafer 30C to the dicing die-bond film X in detail. In this step, the hollow cylinder-shaped jacking member 43 provided in the expansion device abuts on the dicing tape 20 on the lower side of the dicing die-bond film X in the figure, and raises it, so that a semiconductor wafer is bonded. The dicing tape 20 of the 30C dicing die-bonding film X is extended in a two-dimensional direction including a radial direction and a circumferential direction of the semiconductor wafer 30C. This expansion is performed under the condition that a tensile stress of, for example, 1 to 100 MPa is generated in the dicing tape 20. The temperature condition in this step is, for example, 0 ° C or lower, preferably -20 to -5 ° C, more preferably -15 to -5 ° C, and even more preferably -15 ° C. The expansion speed (speed at which the jacking member 43 rises) in this step is, for example, 1 to 500 mm / sec. The expansion amount in this step is, for example, 50 to 200 mm. Through this cold expansion step, the die-bond film 10 of the die-bond die film X is cut into small pieces of the die-bond film 11 to obtain a semiconductor wafer 31 with a die-bond film. Specifically, in this step, a crack is formed in the fragile modified region 30 b in the semiconductor wafer 30C to form a single wafer into the semiconductor wafer 31. At the same time, in this step, in the adhesive film 10 in close contact with the adhesive layer 22 of the expanded dicing tape 20, the deformation in the areas in close contact with the semiconductor wafers 31 of the semiconductor wafer 30C is suppressed. On the other hand, the tensile stress generated by the dicing tape 20 acts on the portion facing the crack formation portion of the wafer in a state where such a deformation suppressing effect is not generated. As a result, in the die-bond film 10, a portion facing the crack formation portion between the semiconductor wafer 31 is cut. The thus-obtained semiconductor wafer 31 with a viscous crystal film is subjected to the above-mentioned picking step with reference to FIG. 6 and is then supplied to a mounting step in a semiconductor device manufacturing process.

The inventors have found that, for example, for the die-bond film 10 in the die-cut die-bond film X that can be used in the semiconductor device manufacturing process described above, a test piece of the die-bond film with a width of 10 mm is placed between the initial chucks. In the tensile test conducted at a distance of 10 mm, 23 ° C and a tensile speed of 300 mm / min, the yield point strength is 15 N or less, the breaking strength is 15 N or less, and the elongation at break is 40 to 400%. The structure is suitable for the following aspects: even when the die-bonding film 10 is thick, the die-bonding film 10 in the expansion step can be cut at a predetermined cut-off location and restrain the self-cutting band 20 from being cut. Splash. For example, as shown in the following examples and comparative examples.

It is considered that the elongation at break in the above-mentioned tensile test of the viscous crystal film 10 is 40 to 400%, preferably 40 to 350%, and more preferably 40 to 300%, which is better in the following aspects: the expansion step for cutting In order to prevent the stretched length of the viscous crystal film 10 from becoming too large, and to make the viscous film 10 prone to ductile failure rather than brittle failure. The more susceptible the viscous crystal film is to ductile failure, the easier it is to conduct the cutting stress in the expansion step for cutting to the planned cutting location of the film, and therefore, it is easier to cut at the planned cutting location.

It is considered that the yield point strength in the above tensile test of the viscous crystal film 10 is 15 N or less, preferably 12 N or less, more preferably 10 N or less, and the breaking strength in the same tensile test is 15 N or less, preferably The above-mentioned configuration, which is 12 N or less, and more preferably 10 N or less, is preferable in that the strain energy accumulated in the film during the elongation process and the fracture process of the viscous crystal film 10 in the expansion step for cutting is suppressed. In the expansion step for cutting, the smaller the internally accumulated strain energy in the elongation process and the fracture process is, the more difficult it is for the exposed area (the area not covered by the workpiece) to break and cause the phenomenon of film spatter.

As described above, the die-bonding film 10 is suitable for achieving good severance and suppressing spatter in the case of being used in the expansion step for singulation in a state of being in close contact with the adhesive layer 22 side of the dicing tape 20. In addition, the cut-to-size die-bond film X is suitable for achieving a good cut in the die-bond film 10 and to suppress spatter when it is used in the expansion step for cutting.

As described above, the thickness of the adhesive film 10 is preferably 40 μm or more, more preferably 60 μm or more, and even more preferably 80 μm or more. Such a configuration is suitable in that the die-bond film 10 is used as a bonding film for embedding semiconductor wafers or a bonding film for inter-semiconductor wafer bonding partially buried with a bonding wire. In addition, the thickness of the die-bond film 10 is preferably 200 μm or less, more preferably 160 μm or less, and even more preferably 120 μm or less. Such a structure is preferred in that it is necessary to avoid excessively high yield point strength or breaking strength and elongation at break of the viscous crystal film 10, and to achieve the yield point strength of 15 N or less and the breaking strength of 15 N in the above tensile test. Hereinafter, the above-mentioned configuration in which the elongation at break is 40 to 400%.

The viscosity at 120 ° C. in the unhardened state of the viscous crystal film 10 is as described above, preferably 300 Pa · s or more, more preferably 700 Pa · s or more, and more preferably 1000 Pa · s or more. The viscosity at 120 ° C in the uncured state of the viscous crystal film 10 is preferably 5000 Pa · s or less, more preferably 4500 Pa · s or less, and more preferably 4000 Pa · s or less. These constitutions related to the viscosity or softness of the die-bonding film 10 in an unhardened state are suitable in the following aspects: using the die-bonding film 10 as a bonding film for embedding a semiconductor wafer or a part of a semiconductor embedded with a bonding wire Adhesive film for inter-wafer bonding.

In the case where the sticky crystal film 10 contains an inorganic filler, the content of the inorganic filler is as described above, preferably 10% by mass or more, more preferably 20% by mass or more, and even more preferably 30% by mass or more. The content is preferably 50% by mass or less, more preferably 45% by mass or less, and even more preferably 40% by mass or less. As the content of the inorganic filler in the film for forming the adhesive layer increases, the breaking elongation of the film tends to be smaller and the yield point strength tends to be larger. Therefore, the composition related to the content of the inorganic filler in the viscous film 10 It is suitable for suppressing the above-mentioned phenomenon that the exposed area (the area not covered by the workpiece) of the viscous crystal film 10 is broken and the film is spattered.

The viscous crystal film 10 preferably contains an organic filler, and the content of the organic filler in the viscous crystal film 10 is preferably 2% by mass or more, more preferably 5% by mass or more, and even more preferably 8% by mass or more. When the viscous crystal film 10 contains an organic filler, its content is preferably 20% by mass or less, more preferably 17% by mass or less, and even more preferably 15% by mass or less. This composition, which is related to the content of the organic filler in the viscous crystal film 10, is suitable in that the falling point strength and the breaking strength of the viscous film 10 are controlled within an appropriate range.

The die-casting film 10 preferably contains an acrylic resin having a glass transition temperature of -40 to 10 ° C. Such a structure is suitable for realizing the above-mentioned structure in which the drop point strength in the above-mentioned tensile test of the viscous crystal film 10 is 15 N or less. [Example]

[Example 1] <Production of a DAD] An acrylic resin A ₁ (trade name "Teisan Resin SG-708-6") having a weight average molecular weight of 700,000, a glass transition temperature Tg of 4 ° C, and Nagase ChemteX Co., Ltd.) 18 parts by mass, epoxy resin (trade name "KI-3000-4", manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.) 28 parts by mass, phenol resin (trade name "LVR8210-DL", group 14 parts by mass of Rong Chemical Industry Co., Ltd., 40 parts by mass of inorganic filler (trade name "SE-2050MC", silicon dioxide, average particle diameter of 0.5 μm, manufactured by Admatechs Co., Ltd.), and a hardening catalyst An organic catalyst (trade name "TPP-MK", manufactured by Beixing Chemical Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain an adhesive composition. Next, using an applicator, the adhesive composition was coated on a polysiloxane release surface having a PET spacer (thickness: 38 μm) having a surface subjected to a polysiloxane release treatment to form an adhesive composition layer. Next, the composition layer was heated and dried at 130 ° C. for 2 minutes, and a 100 μm thick crystal film of Example 1 was fabricated on a PET separator. The composition of the viscous crystal film in Example 1 and each of the following examples and comparative examples is shown in Table 1. (In Table 1, the unit of each value indicating the composition of the viscous film is the relative "mass part" in the composition. ").

<Creation of cut crystal strips> In a reaction vessel including a cooling tube, a nitrogen introduction tube, a thermometer, and a stirring device, 86.4 parts by mass of 2-ethylhexyl acrylate and 13.6 parts by mass of 2-hydroxyethyl acrylate were polymerized. A mixture of 0.2 parts by mass of benzamidine peroxide as a starter and 65 parts by mass of toluene as a polymerization solvent was stirred in a nitrogen atmosphere at 61 ° C. for 6 hours (polymerization reaction). Thereby, a polymer solution containing the acrylic polymer P ₁ was obtained. Next, a mixture containing the polymer solution containing the acrylic polymer P ₁ , 2-methacryloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst was mixed in Stir in an air environment at 50 ° C for 48 hours (addition reaction). To the reaction solution, the formulation amount of the MOI with respect to the acrylic polymer P ₁₁₀₀ parts by mass of 14.6 parts by mass of di-butyl tin formulation with respect to the amount of acrylic polymer P ₁₁₀₀ parts by mass 0.5 parts by mass of . By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in a side chain is obtained. Next, ₂ parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Corporation) and 5 parts by mass of photopolymerization were added to 100 parts by mass of the acrylic polymer P ₂ in the polymer solution. An initiator (trade name "Irgacure 651", manufactured by BASF Corporation) was mixed, and an adhesive composition was obtained. Next, using an applicator, an adhesive composition was coated on a polysiloxane release surface having a PET spacer (thickness: 38 μm) having a surface subjected to a polysiloxane release treatment to form an adhesive composition layer. Next, the composition layer was heated and dried at 120 ° C. for 2 minutes to form an adhesive layer having a thickness of 10 μm on a PET separator. Next, using a laminator, a substrate (trade name "Funcrare NRB # 115") made of ethylene-vinyl acetate copolymer (EVA) was bonded to the exposed surface of the adhesive layer at room temperature, and the thickness was 115 μm. Gunze Co., Ltd.). Cut crystal bands were made as above.

<Creation of a cut crystal sticky film> The above-mentioned sticky crystal film of Example 1 with a PET spacer was punched into a circular shape with a diameter of 330 mm. Secondly, after peeling the PET spacer from the adhesive film and peeling the PET spacer from the dicing tape, use a roller laminator to attach the adhesive layer exposed in the dicing tape and the PET film in the crystalline film. Peeled and exposed. In this bonding, the bonding speed was 10 mm / min, the temperature condition was 40 ° C, and the pressure condition was 0.15 MPa. Secondly, the dicing tape thus bonded to the viscous film is punched into a circle with a diameter of 390 mm in such a manner that the center of the dicing tape is consistent with the center of the viscous film. Next, the adhesive layer of the dicing tape was irradiated with ultraviolet rays from the EVA substrate side. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the cumulative light intensity was 400 mJ / cm ² . In the manner described above, the cut crystal sticky film of Example 1 having a laminated structure including a cut crystal band and a sticky film was prepared.

[Example 2] Instead of using 18 parts by mass of acrylic resin A ₂ (trade name "Teisan Resin SG-70L", weight average molecular weight of 900,000, glass transition temperature Tg of -13 ° C, manufactured by Nagase chemteX Co., Ltd.) Except for 18 parts by mass of the acrylic resin A ₁ , a viscous film (thickness 100 μm) of Example 2 was produced in the same manner as the viscous film of Example 1. In addition, except that the die-bonding film of Example 2 was used instead of the above-mentioned die-bonding film of Example 1, the die-cutting die-bond film of Example 2 was produced in the same manner as the die-cutting die-bond film of Example 1.

[Example 3] Instead of using 18 parts by mass of acrylic resin A ₃ (trade name "Teisan Resin SG-280", weight average molecular weight of 900,000, glass transition temperature Tg of -29 ° C, manufactured by Nagase chemteX Co., Ltd.) Except for 18 parts by mass of the acrylic resin A ₁ , in the same manner as the die-bond film of Example 1, a die-bond film (thickness: 100 μm) of Example 3 was produced. In addition, except that the die-bonding film of Example 3 was used instead of the above-mentioned die-bonding film of Example 1, the die-bonding film of Example 3 was produced in the same manner as the die-bonding film of Example 1.

[Example 4] 18 parts by mass of acrylic resin A ₂ (trade name "Teisan Resin SG-70L", manufactured by Nagase chemteX Co., Ltd.) was used instead of acrylic resin A ₂ (trade name) "KI-3000-4", manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., was set to 22 parts by mass instead of 28 parts by mass, and a phenol resin (trade name "LVR8210-DL") was obtained from Qunei Chemical Industry Co., Ltd. The production amount is 10 parts by mass instead of 14 parts by mass, and the inorganic filler (trade name "SE-2050MC", manufactured by Admatechs Co., Ltd.) is set to 50 parts by mass instead of 40 parts by mass. In the same manner as the die-bonding film of Example 1, a die-bonding film (thickness 100 μm) of Example 4 was produced. In addition, except that the die-bonding film of Example 4 was used in place of the above-mentioned die-bonding film of Example 1, the die-bonding film of Example 4 was produced in the same manner as the die-bonding film of Example 1.

[Example 5] An inorganic filler (trade name "SE-2050MC", manufactured by Admatechs Co., Ltd.) was added in an amount of 30 parts by mass instead of 40 parts by mass, and an organic filler (trade name "Art Pearl J- "4PY", polymethyl methacrylate (PMMA), manufactured by Gensang Industrial Co., Ltd., except for 10 parts by mass, in the same manner as in the crystal film of Example 1, a crystal film (thickness of 100 μm) of Example 5 was produced. ). In addition, except that the die-bonding film of Example 5 was used instead of the above-mentioned die-bonding film of Example 1, the die-bonding film of Example 5 was produced in the same manner as the die-bonding film of Example 1.

[Example 6] except that acrylic resin A ₃ (trade name "Teisan Resin SG-280", manufactured by Nagase ChemteX Corp.) 18 parts by mass instead of the acrylic resin A ₁ 18 parts by mass, the inorganic filler (trade name " SE-2050MC "(manufactured by Admatechs Co., Ltd.) is set to 30 parts by mass instead of 40 parts by mass, and is further equipped with organic fillers (trade name" Art Pearl J-4PY ", polymethyl methacrylate (PMMA), Except for 10 parts by mass of Gensang Industrial Co., Ltd., a viscous film (thickness 100 μm) of Example 6 was produced in the same manner as the viscous film of Example 1. In addition, except that the die-bonding film of Example 6 was used instead of the above-mentioned die-bonding film of Example 1, the die-bonding film of Example 6 was produced in the same manner as the die-bonding film of Example 1.

[Example 7] except that acrylic resin A ₃ (trade name "Teisan Resin SG-280", manufactured by Nagase ChemteX Corp.) 18 parts by mass instead of the acrylic resin A ₁ 18 parts by mass, the inorganic filler (trade name " SE-2050MC "(manufactured by Admatechs Co., Ltd.) was set to 30 parts by mass instead of 40 parts by mass, and further organic fillers (trade name" Art Pearl J-4PY ", polymethyl methacrylate (PMMA), (Manufactured by Gensang Industrial Co., Ltd.) and a thickness of 200 μm instead of 100 μm was used in the same manner as in the crystal film of Example 1 to produce a crystal film of Example 7. In addition, except that the die-bonding film of Example 7 was used instead of the above-mentioned die-bonding film of Example 1, the die-bonding film of Example 7 was produced in the same manner as the die-cutting film of Example 1.

[Comparative Example 1] Except that the compounding amount of epoxy resin (trade name "KI-3000-4", manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) was 22 parts by mass instead of 28 parts by mass, a phenol resin (trade name "LVR8210-DL", manufactured by Qun Rong Chemical Industry Co., Ltd., was set to 10 parts by mass instead of 14 parts by mass, and the amount of inorganic filler (trade name "SE-2050MC", manufactured by Admatechs Corporation) A viscous crystal film (thickness: 100 μm) of Comparative Example 1 was produced in the same manner as in the viscous crystal film of Example 1 except that it was set to 50 parts by mass instead of 40 parts by mass. In addition, except that the die-bonding film of Comparative Example 1 was used instead of the above-mentioned die-bonding film of Example 1, a die-cutting die-bonding film of Comparative Example 1 was produced in the same manner as the die-cutting die-bonding film of Example 1.

[Comparative Example 2] except that the acrylic resin A ₂ (trade name "Teisan Resin SG-70L", manufactured by Nagase ChemteX Corp.) 24 parts by mass instead of the acrylic resin A ₁ 18 parts by mass, an epoxy resin (trade name "KI-3000-4", manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.) was set to 24 parts by mass instead of 28 parts by mass, and phenol resin (trade name "LVR8210-DL") was selected by Qunei Chemical Industry Co., Ltd. (Manufactured by the company) was prepared in a manner similar to that of Example 1 except that 12 parts by mass was used instead of 14 parts by mass, and a sticky film (thickness 100 μm) of Comparative Example 2 was produced. In addition, except that the die-bonding film of Comparative Example 2 was used instead of the above-mentioned die-bonding film of Example 1, a die-bonding film of Comparative Example 2 was produced in the same manner as the die-cutting film of Example 1.

[Comparative Example 3] A viscous crystal film of Comparative Example 3 was produced in the same manner as the viscous crystal film of Example 1 except that the thickness was set to 200 μm instead of 100 μm. In addition, except that the die-bonding film of Comparative Example 3 was used instead of the above-mentioned die-bonding film of Example 1, a die-cutting die-bonding film of Comparative Example 3 was produced in the same manner as the die-cutting die-bonding film of Example 1.

<Tensile Test of Sticky Crystal Film> Using the tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), the above-mentioned sticky film of Examples 1 to 7 and Comparative Examples 1 to 3 were used. The cut-out test pieces (width 10 mm × length 30 mm) of each of the viscous film films were subjected to a tensile test, and the drop point strength, breaking strength, and elongation at break were measured. In this tensile test, the initial inter-chuck distance was 10 mm, the temperature condition was 23 ° C, and the tensile speed was 300 mm / min. The fingers of the measured dropout point strength (N), breaking strength (N), and elongation at break (%) are shown in Table 1.

<Measurement of Viscosity of Viscous Crystal Film> The viscosity of each of the above viscous crystal films of Examples 1 to 7 and Comparative Examples 1 to 3 was measured at 120 ° C in an unhardened state. Specifically, a 0.1 g sample taken from the adhesive crystal film was loaded into a parallel plate (diameter 20 mm) as a measurement plate, and a rheometer (trade name "RS-1", manufactured by HAAKE) was used. The parallel plate method was used to measure the melt viscosity (Pa · s) of the sample. In this measurement, the gap between the parallel plates was 0.1 mm, the strain rate was 5 / sec, the temperature rise rate was 10 ° C / min, and the measurement temperature range was 90 to 150 ° C. The measurement results are shown in Table 1.

<Evaluation of the severability and spatter of the viscous crystal film> Using the above-mentioned each of the viscous crystal film of Examples 1 to 7 and Comparative Examples 1 to 3, the following bonding steps and the first expansion step for cutting were performed ( Cold expansion step) and a second expansion step (normal temperature expansion step) for separation.

In the bonding step, the die-cut die-bond film is bonded to the die-bond film held by the wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Corporation), and thereafter, The wafer processing tape is peeled from the semiconductor wafer division. During bonding, a bonding machine was used, the bonding speed was 10 mm / sec, the temperature condition was 50 to 80 ° C, and the pressure condition was 0.15 MPa. The semiconductor wafer division system is prepared as follows. First, for a bare wafer (12 inches in diameter and 780 μm in thickness) held by a wafer processing tape (trade name "V12S-R2-P", manufactured by Nitto Denko Corporation) together with the ring frame, (Tokyo Chemical Co., Ltd.), from one side, a cutting device (trade name "DFD6361", manufactured by Disco Co., Ltd.) was used to form a dividing groove (width 25 μm, depth) for singulation using a rotary cutter. 50 μm. Form a grid with an interval of 6mm × 12mm). Next, the wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Corporation) was bonded to the surface of the dividing groove, and then the wafer processing tape (trade name "V12S-R2-P") was attached. Stripped from wafer. Thereafter, using a back-side polishing device (trade name "DGP8760", manufactured by Disco Co., Ltd.), the wafer was thinned to a thickness of 20 μm by grinding from the other side of the wafer (the surface on which the dividing grooves were not formed). Then, by using the dry polishing using the same device, the ground surface is mirror-polished. As described above, the semiconductor wafer division is formed (in a state held by the wafer processing tape). The semiconductor wafer segment includes a plurality of semiconductor wafers (6 mm × 12 mm).

The cold expansion step was performed in a cold expansion unit using a sheet expansion device (trade name "Die Separator DDS2300", manufactured by Disco Co., Ltd.). Specifically, first, a 12-inch diameter SUS ring frame (Disco Co., Ltd.) was attached to the die-cut tape adhesive layer of the above-mentioned die-cut adhesive film with a semiconductor wafer segment at room temperature. Made by the company). Next, the cut crystal sticky film is placed in the device, and the cut band of the cut crystal sticky film with the semiconductor wafer division is expanded in the cold expansion unit of the same device. In this cold expansion step, the temperature is -15 ° C, the expansion speed is 300 mm / sec, and the expansion amount is 10 mm.

The room temperature expansion step is performed in a room temperature expansion unit using a film expansion device (trade name "Die Separator DDS2300", manufactured by Disco Co., Ltd.). Specifically, the dicing tape of the dicing die-bonding film with the semiconductor wafer split body after the cold expansion step is expanded in the normal temperature expansion unit of the same device. In this normal temperature expansion step, the temperature is 23 ° C, the expansion speed is 1 mm / sec, and the expansion amount is 10 mm. Thereafter, a heat shrinkage treatment is performed on the peripheral edge portion of the workpiece bonding area outside the bonded die-cutting film that has been expanded at normal temperature.

Regarding the severability of the viscous crystal film, after passing through the above-mentioned process using the slicing crystal film, it is evaluated as good (○) when a cut occurs in the whole area of the cut line, and otherwise it is evaluated as bad ( ×). Regarding the spattering of the die-casting film, after performing the above-mentioned process using a die-cutting die-casting film, peeling from the tape and confirming the state of the sticking-film film spattering on the semiconductor wafer was evaluated as bad ( ×), otherwise it is evaluated as good (○). The results of these evaluations are shown in Table 1.

[Evaluation] With the die attach film of Examples 1 to 7, in the expansion step using a cut die attach film to obtain a semiconductor wafer with a die attach film, a good cut can be achieved and spatter can be suppressed.

[Table 1]

10‧‧‧ Sticky Crystal Film

11‧‧‧ Sticky Crystal Film

20‧‧‧ cut crystal ribbon

21‧‧‧ substrate

22‧‧‧ Adhesive layer

22a‧‧‧ Adhesive surface

30a‧‧‧ split groove

30b‧‧‧Modified area

30A‧‧‧Semiconductor wafer

30B‧‧‧Semiconductor Wafer Split

30C‧‧‧Semiconductor wafer

31‧‧‧semiconductor wafer

31'‧‧‧semiconductor wafer

41‧‧‧ ring frame

42‧‧‧ retainer

43‧‧‧ jacking member

44‧‧‧pin member

45‧‧‧Adsorption fixture

51‧‧‧Mounting base

52‧‧‧ Adhesive layer

53‧‧‧ bonding wire

54‧‧‧sealing resin

55‧‧‧ bump

56‧‧‧ Underfill

R‧‧‧ Irradiated area

T1‧‧‧ Wafer Processing Tape

T1a‧‧‧ Adhesive surface

T2‧‧‧ Wafer Processing Tape

T2a‧‧‧ Adhesive surface

T3‧‧‧ Wafer Processing Tape

T3a‧‧‧ Adhesive surface

W‧‧‧Semiconductor wafer

Wa‧‧‧Part 1

Wb‧‧‧Part 2

X‧‧‧ cut crystal

FIG. 1 is a schematic cross-sectional view of a cut crystal adhesive film according to an embodiment of the present invention. 2 (a) to 2 (d) are diagrams showing a part of a method of manufacturing a semiconductor device according to an embodiment of the present invention. 3 (a) and 3 (b) are diagrams showing a part of a method of manufacturing a semiconductor device according to an embodiment of the present invention. 4 (a) to 4 (c) are diagrams showing a part of a method of manufacturing a semiconductor device according to an embodiment of the present invention. 5 (a) and 5 (b) show steps of a part of a method for manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 6 shows steps of a part of a method of manufacturing a semiconductor device according to an embodiment of the present invention. 7 (a) to 7 (c) are diagrams showing a part of a method of manufacturing a semiconductor device according to an embodiment of the present invention. 8 (a) and 8 (b) are diagrams showing a part of a method of manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 9 shows a part of a method of manufacturing a semiconductor device according to an embodiment of the present invention. 10 (a) to 10 (c) are diagrams showing a part of a method of manufacturing a semiconductor device according to an embodiment of the present invention. 11 (a) and 11 (b) are diagrams showing a part of a method of manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 12 shows a part of a method of manufacturing a semiconductor device according to an embodiment of the present invention. 13 (a) and 13 (b) are diagrams showing a part of a method of manufacturing a semiconductor device according to an embodiment of the present invention. 14 (a) to 14 (c) are diagrams showing a part of a method of manufacturing a semiconductor device according to an embodiment of the present invention. 15 (a) and 15 (b) are diagrams showing a part of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Claims (12)

A type of viscous film, the tensile strength of the tenacity test of a viscous film test piece with a width of 10 mm under the conditions of an initial chuck distance of 10 mm, 23 ° C and a tensile speed of 300 mm / min is 15 N or less, breaking strength is 15 N or less, and elongation at break is 40 to 400%. For example, the adhesive film of claim 1 has a thickness of 40 to 200 μm. For example, the viscosity film of claim 1 has a viscosity of 300 to 5000 Pa · s at 120 ° C. For example, the viscous crystal film of claim 1 contains an inorganic filler in a proportion of 10 to 50% by mass. For example, the viscous crystal film of claim 1 contains an organic filler in a proportion of 2 to 20% by mass. For example, the viscous crystal film of claim 4 contains an organic filler in a proportion of 2 to 20% by mass. For example, the viscous crystal film of claim 1 contains an acrylic resin having a glass transition temperature of -40 to 10 ° C. The die-bonding film according to any one of claims 1 to 7, which is used for embedding together a whole or a part of a first semiconductor wafer wire-bonded and mounted on a mounting substrate and a bonding wire connected to the first semiconductor wafer and An adhesive layer forming application for bonding a second semiconductor wafer to the mounting substrate. The die-bonding film according to any one of claims 1 to 7, which is used to cover the bonding wire connection portion of the first semiconductor wafer that is wire-bonded and mounted on the mounting substrate, and embeds a part of the bonding wire in the first Application for forming an adhesive layer for bonding a second semiconductor wafer to a semiconductor wafer. The adhesive film according to any one of claims 1 to 7, which is used to form an adhesive layer for embedding a first semiconductor wafer to be mounted on a mounting substrate and bonding a second semiconductor wafer to the mounting substrate. . A cut crystal adhesive film, comprising: a cut crystal tape having a laminated structure including a substrate and an adhesive layer; and the adhesive layer releasably adhered to the cut crystal tape as described in claim 1 to Any of the sticky crystal film. A method for manufacturing a semiconductor device, comprising: a first step of bonding a semiconductor wafer that can be singulated into a plurality of semiconductor wafers, or a plurality of semiconductor wafers including the plurality of semiconductor wafers; A semiconductor wafer divided body of a semiconductor wafer; and a second step, which is to expand the above-mentioned cut-off band of the above-mentioned cut-off die-bond film and cut the above-mentioned cut-off die film to obtain a die-attached semiconductor wafer .