Nothing Special   »   [go: up one dir, main page]

TW201026806A - Resin paste for die bonding, method for producing semiconductor device, and semiconductor device - Google Patents

Resin paste for die bonding, method for producing semiconductor device, and semiconductor device Download PDF

Info

Publication number
TW201026806A
TW201026806A TW098127608A TW98127608A TW201026806A TW 201026806 A TW201026806 A TW 201026806A TW 098127608 A TW098127608 A TW 098127608A TW 98127608 A TW98127608 A TW 98127608A TW 201026806 A TW201026806 A TW 201026806A
Authority
TW
Taiwan
Prior art keywords
resin
semiconductor device
paste
mass
substrate
Prior art date
Application number
TW098127608A
Other languages
Chinese (zh)
Inventor
Shuichi Mori
Yoshifumi Sugiura
Youji Katayama
Seigo Yokochi
Megumu Oshikoji
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW201026806A publication Critical patent/TW201026806A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/72—Polyisocyanates or polyisothiocyanates
    • C08G18/74—Polyisocyanates or polyisothiocyanates cyclic
    • C08G18/76—Polyisocyanates or polyisothiocyanates cyclic aromatic
    • C08G18/7657—Polyisocyanates or polyisothiocyanates cyclic aromatic containing two or more aromatic rings
    • C08G18/7664—Polyisocyanates or polyisothiocyanates cyclic aromatic containing two or more aromatic rings containing alkylene polyphenyl groups
    • C08G18/7671—Polyisocyanates or polyisothiocyanates cyclic aromatic containing two or more aromatic rings containing alkylene polyphenyl groups containing only one alkylene bisphenyl group
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08—Processes
    • C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/2805—Compounds having only one group containing active hydrogen
    • C08G18/2815—Monohydroxy compounds
    • C08G18/282—Alkanols, cycloalkanols or arylalkanols including terpenealcohols
    • C08G18/2825—Alkanols, cycloalkanols or arylalkanols including terpenealcohols having at least 6 carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/48—Polyethers
    • C08G18/4854—Polyethers containing oxyalkylene groups having four carbon atoms in the alkylene group
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201—Structure
    • H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014—Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83856—Pre-cured adhesive, i.e. B-stage adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01011—Sodium [Na]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

A resin paste for die bonding, which comprises a polyurethane imide resin represented by general formula (I), a thermo setting resin, a filler, and a solvent for printing, wherein the amount of the thermosetting resin added is 250 to 500 parts by mass relative to 100 parts by mass of the polyurethane inside resin. [In the formula, R1 represents a bivalent organic group containing an aromatic ring or an aliphatic ring; R2 represents a bivalent organic group having a molecular weight of 100 to 10,000; R3 represents a tetravalent organic group containing at least 4 carbon atoms; and n and m independently represent an integer of 1 to 100.]

Description

201026806 六、發明說明： 【發明所屬之技術領域】 ^ '半導體裝置 $發明係關於一 本發明係關於一種晶粒結著用樹脂糊 之製造方法及半導體裝置，更詳細言之，201026806 VI. Description of the Invention: [Technical Field of the Invention] ^ 'Semiconductor Device $ Invention> The present invention relates to a method and a semiconductor device for manufacturing a resin paste for grain bonding, and more specifically,

植作爲IC ％肥稼彺文狩基 板等之支持部件之接合材料（晶粒於芙 刊·〈日日权結著用材料）使用之晶 粒結者用樹脂糊獎，以及使用其之生道牌壯m ❹ IK/tl丹之牛導體裝置之製造方法 及半導體裝置。 【先前技術】 ， 1C或LSI與導線架之接合材料，傳統上，已知有Au- - Si共晶合金、焊錫或銀糊獎等。此外，使用特定之聚酸亞 胺樹脂之接著薄膜、在特定之聚醯亞胺樹脂上加上導電性 塡充劑或無機塡充劑之晶粒結著用接著薄膜，亦爲先前曾 被提案者（專利文獻1〜3參照）。 鲁 先前技術文獻 專利文獻 專利文獻1 :特開平07-228697號公報 專利文獻2:特開平06-145639號公報 專利文獻3 :特開平06-264〇35號公報 【發明內容】 發明之揭示 -5- 201026806 發明所欲解決之課題 上述Au-Si共晶合金，其耐熱性及耐濕性高，但彈性 率亦大之故，在適用於大型晶片時存在有容易破裂之問題 。此外，Au-Si共晶合金，還有價格昂貴之困難點。另一 方面，焊錫雖然便宜，但其耐熱性差，其彈性率亦與Au-Si共晶合金同樣地高，從而很難適用於大型晶片。 相對於此，銀糊漿，其係便宜，高耐濕性，且彈性率 亦較Au-Si共晶合金或焊錫爲低，甚至於適用在350°C之 H 熱壓著型打線接合機之程度的耐熱性。因此，現今，銀糊 漿已成爲晶粒結著材料之主流。但隨著1C或LSI之高度 體積密度化，晶片在大型化之中，如欲將1C或LSI及導 - 線架以銀糊漿進行接合時，要將銀糊漿在晶片全面上塗佈 _ 就有其困難。 此外，近年隨著封裝的小型化及輕量化，絕緣性支持 基板之使用變得廣泛，並且，爲達成製造成本降低之目的 ，將晶粒結著材料以高量產性之印刷法進行供給之方法， @ 就受到嗎目。而在其中，如將上述專利文獻1〜3所記載 之接著薄膜有效率地供給、貼附於絕緣性支持基板上時， 就有必要事先將接著薄膜切成（或打穿成）晶片大小，然 後貼附。 關於將接著薄膜切成晶片大小並貼附於基板之方法， 必須有一用以提升生產效率之貼附裝置。此外，在將接著 薄膜打穿並將多數個晶片分以一次性地進行貼附之方法， 容易造成接著薄膜之浪費。進一步，絕緣性支持基板之大 -6- 201026806 部分’由於在基板內部形成有內層配線之故，貼附接著薄 膜之表面上會有很多凹凸’且在接著薄膜貼附時將容易產 生空隙，造成信賴性降低。 此外’在事先於基板上形成晶粒結著材料，並在其上 貼附半導體晶片之方法中’係於貼附半導體晶片之前，將 塗佈於基板上之晶粒結著材料進行乾燥半硬化（B階化） ’再於其上壓著半導體晶片之後，進行後硬化步驟，即例 e _曰曰“立_ 材料以180°C之烘箱進行1小時之硬化。一 般而言’將晶粒結著材料進行B階化後之基板，係一片一 片地置入掛架等而暫時地保管。然而，最近，基於步驟管 * 理之簡化等觀點，則要求將晶粒結著材料直接重疊於B階 化後之基板來處理。經重叠之基板，係於室溫條件下暫時 地被保管’而在貼附半導體晶片之步驟中，再藉由吸著將 基板一片一片地加以搬運。然而，在B階化後，如係具有 黏著性之晶粒結著材料，如直接重疊保管時，基板之重量 φ 將導致施加重量，因此基板間會產生黏合，從而無法藉由 吸著而進行一片一片地搬運。此外，基板間在黏貼之後， 由於即使撕下來其晶粒結著材料之膜厚度、或表面粗糙度 皆會變化之故，將有導致信賴性降低之虞。因此，如在B 階化後之基板，直接進行重疊處理時，就有必要使其在室 溫條件下，即使負加一定之重量，基板間都不會黏貼在一 起，亦即降低其黏著性之必要。 本發明有鑑於此種情事，其目的在於提供一種晶粒結 著用樹脂糊漿，其特徵在於即使樹脂糊漿在B階化後直接 201026806 將基板多數地加以重疊，亦能容易地加以撕離，亦即，其 係可將B階狀態下之黏著性充分地降低者。此外，本發明 之目的，並在於提供一種使用上述晶粒結著用樹脂糊漿之 半導體裝置之製造方法，以及，半導體裝置。 解決課題之手段 本發明者們，爲達成上述目的而重複進行努力檢討之 結果，提供了 一種晶粒結著（die bonding)用樹脂糊漿， 其特徵爲含有下述一般式（I)所表示之聚胺基甲酸乙酯 醯亞胺樹脂、熱硬化性樹脂、塡料與印刷用溶劑，前述熱 硬化性樹脂之配合量，係相對於前述聚胺基甲酸乙酯醯亞 胺樹脂100質量份，爲250〜500質量份， [化1]The bonding material used as a supporting member for the support member of the IC% fertilizer, such as the % 狩 狩 狩 ( ( ( ( 晶粒 晶粒 晶粒 树脂 树脂 树脂 树脂 树脂 树脂 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒Brand strong m ❹ IK / tl Dan cattle conductor manufacturing method and semiconductor device. [Prior Art], 1C or a bonding material of an LSI and a lead frame, conventionally, an Au--Si eutectic alloy, a solder or a silver paste is known. In addition, the use of a specific film of a polyamicimide resin, a conductive chelating agent or a mineral chelating agent for a specific polyimide resin, is also proposed previously. (refer to Patent Documents 1 to 3). 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 - 201026806 Problem to be Solved by the Invention The Au-Si eutectic alloy has high heat resistance and moisture resistance, but has a large modulus of elasticity, and has a problem that it is easily broken when applied to a large wafer. In addition, the Au-Si eutectic alloy has the difficulty of being expensive. On the other hand, although the solder is inexpensive, the heat resistance is poor, and the modulus of elasticity is also as high as that of the Au-Si eutectic alloy, so that it is difficult to apply to a large wafer. In contrast, silver paste is cheap, high in moisture resistance, and has a lower modulus of elasticity than Au-Si eutectic alloy or solder, even at a hot press type wire bonding machine of 350 ° C. Degree of heat resistance. Therefore, today, silver paste has become the mainstream of grain-bonding materials. However, with the high volume density of 1C or LSI, the wafer is being enlarged, and if the 1C or LSI and the lead frame are joined by silver paste, the silver paste is coated on the wafer. There are difficulties. In addition, in recent years, with the miniaturization and weight reduction of packaging, the use of an insulating support substrate has become widespread, and in order to achieve a reduction in manufacturing cost, a crystal grain-forming material is supplied in a high-productivity printing method. The method, @ is subject to it. In the meantime, when the adhesive film described in the above Patent Documents 1 to 3 is efficiently supplied and attached to the insulating support substrate, it is necessary to cut (or punch) the adhesive film in advance. Then attach it. Regarding the method of cutting the subsequent film into a wafer size and attaching it to a substrate, it is necessary to have an attaching device for improving production efficiency. Further, in the method of piercing the film and attaching a plurality of wafers in a single pass, it is easy to cause waste of the film. Further, the large -6-201026806 portion of the insulating support substrate has a large number of irregularities on the surface of the attached film due to the formation of the inner layer wiring inside the substrate, and a void is likely to be generated when the film is attached. Reduced reliability. In addition, 'the method of forming a grain-forming material on a substrate in advance and attaching a semiconductor wafer thereon' is to dry-semi-harden the grain-bonding material coated on the substrate before attaching the semiconductor wafer. (B-staged) 'After pressing the semiconductor wafer thereon, a post-hardening step is performed, that is, the example e_曰曰"立_material is hardened in an oven at 180 ° C for 1 hour. Generally, the crystal grains are The substrate after the B-stage of the material is temporarily placed in a rack or the like and temporarily stored. However, recently, based on the simplification of the step management, it is required to directly overlap the grain-bonding material. The substrate after the B-stage is processed. The stacked substrates are temporarily stored under room temperature conditions. In the step of attaching the semiconductor wafer, the substrates are transported one by one by suction. After the B-stage, if it is an adhesive grain-bonding material, such as direct overlap storage, the weight φ of the substrate will result in the application of weight, so that the substrate will be bonded, so that it cannot be immersed. In addition, after the substrate is pasted, the thickness of the film or the surface roughness of the grain-forming material may change even if the film is peeled off, so that the reliability is lowered. Therefore, as in the B-stage. When the substrate is directly overlapped, it is necessary to make it adhere to the substrate without any weight, even if a certain weight is applied at room temperature, that is, it is necessary to reduce the adhesion. In view of such circumstances, it is an object of the invention to provide a resin paste for grain-forming, which is characterized in that even if the resin paste is largely overlapped by the 201026806 after the B-stage, the substrate can be easily peeled off, that is, In addition, it is an object of the present invention to provide a method of manufacturing a semiconductor device using the above-described resin paste for grain bonding, and a semiconductor device. Means for Solving the Problems As a result of repeated efforts to achieve the above object, the present inventors have provided a resin paste for die bonding. The polyurethane quinone imine resin represented by the following general formula (I), a thermosetting resin, a dip material, and a solvent for printing, wherein the amount of the thermosetting resin is based on the poly 100 parts by mass of the urethane quinone imine resin, 250 to 500 parts by mass, [Chemical 1]

Ο 〇 [式中，R1表示含有芳香族環或脂肪族環之2價的有機基 ，R2表示分子量1〇〇~ 10,〇〇〇之2價的有機基，R3表示含 有4個以上碳原子之4價的有機基，n及m各自獨立表示 1~1〇〇之整數]。 利用此種晶粒結著用樹脂糊漿，可使上述一般式（I )所表示之聚胺基甲酸乙酯醯亞胺樹脂，在含有熱硬化性 ** 8 - 201026806 樹脂、塡料與印刷用溶劑之同時，且配合所定範圍之熱硬 化性樹脂，並將B階狀態下之黏著性充分地降低，且在直 接重疊多個基板而保管後，仍能容易地撕離，以便於後面 之步驟中使用者。此外，利用具有上述構成之晶粒結著用 樹脂糊漿，對於必須在比較低之溫度下將半導體晶片進行 貼附之基板而言，就可以印刷法而容易地進行供給、塗佈 〇 φ 在本發明之晶粒結著用樹脂糊漿中，塡料係以含有球 狀二氧化矽微粒子爲較佳。藉此，在B階狀態下之黏著性 就可以更爲降低。 • 本發明又提供一種半導體裝置之製造方法，其較佳者 . 係特徵爲含有以下步驟；塗佈上述本發明之晶粒結著用樹 脂糊漿於基板上以形成塗膜之塗佈步驟，與於上述塗膜上 搭載半導體晶片之半導體晶片搭載步驟。 根據此種半導體裝置之製造方法，由於使用了上述本 φ 發明之晶粒結著用樹脂糊漿，就可以在較低溫度下將半導 體晶片貼附於基板上，而得到具有優良耐熱性及晶片接著 性之半導體裝置。 此外，本發明之半導體裝置之製造方法，其中較佳者 更含有於上述塗佈步驟之後，將上述塗膜進行乾燥且B階 化之乾燥步驟，且在上述半導體晶片搭載步驟中，於經B 階化之上述塗膜上搭載半導體晶片。 本發明之晶粒結著用樹脂糊漿，由於其可在B階狀態 下得到充分之耐熱性及晶片接著性之故，藉由含有上述乾 -9 - 201026806 燥步驟’就可以得到信賴性更優良之半導體裝置。 本發明並進一步提供一種半導體裝置，其特徵爲藉由 上述本發明之半導體裝置之製造方法所得。此種半導體裝 置’由於其使用上述本發明之晶粒結著用樹脂糊漿將半導 體晶片貼附於基板上之故，就可以得到優良之耐熱性及晶 片接著性之半導體裝置。 發明之效果 @ 根據本發明，對於必須在比較低之溫度下將半導體晶 片進行貼附之基板而言，就可以提供可藉由印刷法而容易 地進行供給、塗佈之晶粒結著用樹脂糊漿。此外，本發明 . 之晶粒結著用樹脂糊漿，其具有耐熱性，容易處理，且具 有優良之低應力性及低溫接著性。進一步，由於其在B階 狀態下之黏著性被充分地減低之故，在B階化後即可將基 板直接重疊進行保管，所以可使半導體裝置組裝時之步驟 管理更加地簡便化。本發明之晶粒結著用樹脂糊漿，其在 0 晶粒結著用方面，係相當適合於使用在有機基板等之絕緣 性支持基板或銅導線架。此外，其亦可使用在42合金導 線架上。再者，根據本發明’並可提供一種使用上述本發 明之晶粒結著用樹脂糊漿之半導體裝置之製造方法及藉由 此種製造方法製造之半導體裝置。 【實施方式】 實施發明之最佳形態 -10- 201026806 以下茲就本發明之適合實施形態加以詳細說明。 本發明之晶粒結著用樹脂糊漿（以下’亦有單獨稱爲 「樹脂糊漿」者），其特徵爲含有（A)下述一般式（I) 所表示之聚胺基甲酸乙酯醯亞胺樹脂（以下，亦有稱爲「 (A)成分」者）， [化2]Ο 〇 [wherein, R1 represents a divalent organic group containing an aromatic ring or an aliphatic ring, R2 represents a molecular weight of 1〇〇-10, a divalent organic group of fluorene, and R3 represents 4 or more carbon atoms. The tetravalent organic group, n and m each independently represent an integer of 1 to 1 ]]. By using the resin paste for the grain formation, the polyurethane urethane resin represented by the above general formula (I) can be contained in a resin containing thermosetting ** 8 - 201026806, sputum and printing. When a solvent is used in combination with a thermosetting resin of a predetermined range, the adhesion in the B-stage state is sufficiently lowered, and after a plurality of substrates are directly stacked and stored, it can be easily peeled off, so that it can be easily removed. User in the step. Further, by using the resin paste for crystal graining having the above-described configuration, the substrate to which the semiconductor wafer must be attached at a relatively low temperature can be easily supplied and coated by the printing method. In the resin paste for grain-forming of the present invention, it is preferred that the coating contains spherical cerium oxide fine particles. Thereby, the adhesion in the B-stage state can be further reduced. The present invention further provides a method of fabricating a semiconductor device, characterized in that it comprises the following steps: a coating step of applying the resin paste for grain bonding of the present invention onto a substrate to form a coating film, A semiconductor wafer mounting step of mounting a semiconductor wafer on the coating film. According to the method of manufacturing a semiconductor device of the present invention, since the resin paste for grain bonding of the above-mentioned φ invention is used, the semiconductor wafer can be attached to the substrate at a relatively low temperature to obtain excellent heat resistance and wafer. A semiconductor device of the nature. Further, in the method of manufacturing a semiconductor device of the present invention, preferably, the coating film is dried and B-staged after the coating step, and in the semiconductor wafer mounting step, in the B A semiconductor wafer is mounted on the above-mentioned coating film. The resin paste for crystal graining of the present invention can obtain sufficient heat resistance and wafer adhesion in the B-stage state, and the reliability can be obtained by including the above-mentioned dry -9 - 201026806 drying step Excellent semiconductor device. The present invention further provides a semiconductor device characterized by the method for fabricating the semiconductor device of the present invention described above. In such a semiconductor device, since a semiconductor wafer is attached to a substrate by using the above-described resin paste for grain bonding of the present invention, a semiconductor device excellent in heat resistance and wafer adhesion can be obtained. Advantageous Effects of Invention According to the present invention, a substrate for attaching a semiconductor wafer to a relatively low temperature can provide a resin for grain bonding which can be easily supplied and coated by a printing method. Paste. Further, the present invention is a resin paste for grain formation which is heat-resistant, easy to handle, and has excellent low stress and low-temperature adhesion. Further, since the adhesion in the B-stage state is sufficiently reduced, the substrate can be directly stacked and stored after the B-stage, so that the step management in assembling the semiconductor device can be further simplified. The resin paste for grain formation of the present invention is suitable for use in an insulating support substrate or a copper lead frame for use in an organic substrate or the like in terms of 0 grain bonding. In addition, it can also be used on the 42 alloy wire guide. Furthermore, according to the present invention, a method of manufacturing a semiconductor device using the above-described resin paste for grain bonding of the present invention and a semiconductor device manufactured by such a manufacturing method can be provided. [Embodiment] BEST MODE FOR CARRYING OUT THE INVENTION -10-201026806 Hereinafter, a suitable embodiment of the present invention will be described in detail. The resin paste for grain formation of the present invention (hereinafter also referred to as "resin paste alone") is characterized by containing (A) the ethyl urethane represented by the following general formula (I)醯 imine resin (hereinafter, also referred to as "(A) component)", [Chemical 2]

Ο 〇 [式中，R1表示含有芳香族環或脂肪族環之2價的有機基 ，R2表示分子量100〜10,〇〇〇之2價的有機基，R3表示含 有4個以上碳原子之4價的有機基，n及m各自獨立表示 1〜1 00之整數]。 此外，本發明之樹脂糊漿，其除上述（A)成分外， 並係含有（B )熱硬化性樹脂（以下，亦有稱爲「（ b )成 分」者）、（C)塡料（以下’亦有稱爲「（c)成分」者 )與（D )印刷用溶劑（以下’亦有稱爲r ( d )成分」 者）。以下，茲就各成分加以詳細地說明。 (A)聚胺基甲酸乙酯醯亞胺樹脂，其係上述—般式 (I)所表示者。其中’在上述一般式（I)中，R1所示之 含有芳香族環或脂肪族環之2價的有機基，係以二異氰酸 酯殘基爲較佳’並以含有下述一般式（II)所示構造10〜 -11 - 201026806 100 mol%者爲最佳。 [化3]Ο 〇 [wherein, R1 represents a divalent organic group containing an aromatic ring or an aliphatic ring, R2 represents a molecular weight of 100 to 10, a divalent organic group of fluorene, and R3 represents 4 or more carbon atoms. The organic group of the valence, n and m each independently represent an integer of 1 to 100 00]. Further, the resin syrup of the present invention contains (B) a thermosetting resin (hereinafter, also referred to as "(b) component)" and (C) a dip in addition to the component (A). The following 'also referred to as "(c) component) and (D) solvent for printing (hereinafter referred to as "r (d) component"). Hereinafter, each component will be described in detail. (A) A polyurethane quinone imine resin which is represented by the above formula (I). Wherein 'in the above general formula (I), the divalent organic group containing an aromatic ring or an aliphatic ring represented by R1 is preferably a diisocyanate residue and contains the following general formula (II) The structure shown is 10~ -11 - 201026806 100 mol% is the best. [Chemical 3]

此外’殘餘之二異氰酸酯殘基，例如有下述式等。 [化4]Further, the 'residual diisocyanate residue' has, for example, the following formula. [Chemical 4]

此等可爲1種類或2種類以上組合加以使用。 上述一般式（I)中之R2所示之分子量100~1 0,000之 2價的有機基’係以二醇殘基爲較佳。二醇殘基，例如有 聚丁二烯二醇、聚異戊二烯二醇、聚碳酸酯二醇、聚醚二 醇、聚酯二醇、聚己內酯二醇、聚矽氧烷二醇等之二醇所 衍生之基。r2’其二醇殘基’係以含有下述一般式（ΠΙ) [化5] -{CH2-CH2-CH2-CH2-0)-佃) 201026806 所示之重複單位所成構造10〜100 mol %者爲最佳。 此外，殘餘之二醇殘基，例如有具有下述式等之重複 單位者。 [化6] -(ch2-ch(ch3)-ok -(ch2-ch2-o)-、 -(gh2-ch2-ch2-ch2-〇kThese may be used in combination of one type or two types or more. The divalent organic group of the molecular weight of 100 to 10,000 represented by R2 in the above general formula (I) is preferably a diol residue. The diol residue is, for example, polybutadiene diol, polyisoprene diol, polycarbonate diol, polyether diol, polyester diol, polycaprolactone diol, polyoxy siloxane A group derived from a diol such as an alcohol. R2 'the diol residue' is constructed by repeating units of the general formula (ΠΙ5) -{CH2-CH2-CH2-CH2-0--) 201026806 as shown in the following formula: 10~100 mol % is the best. Further, the residual diol residue is, for example, a repeating unit having the following formula or the like. [6] -(ch2-ch(ch3)-ok -(ch2-ch2-o)-, -(gh2-ch2-ch2-ch2-〇k

-(CHg-CHCCHsKiJa-iC^-C^-Ob- (a/b=9 〜1/1 ~9mol% 之共聚物〉、 _[C0-(CH2)4-C0-0-(CH2)!2_0]_、 -[〇〇-{叫)4-〇〇-〇-(叫-〇-(〇叫-〇]-、 -[COKCH^-COO-CHz-CmCHsJ-O】、 -[GO-iCI^-CO-OKCH^-O]'-(CHg-CHCCHsKiJa-iC^-C^-Ob- (copolymer of a/b=9 ～1/1 to 9 mol%), _[C0-(CH2)4-C0-0-(CH2)!2_0 ]_, -[〇〇-{叫)4-〇〇-〇-(called-〇-(〇叫-〇]-, -[COKCH^-COO-CHz-CmCHsJ-O], -[GO-iCI ^-CO-OKCH^-O]'

-[gckgh^-gckhgh^-oK -[C0-(CKt)4-C0-0-CH2-C(CH3^-CH2-0]-x-[gckgh^-gckhgh^-oK -[C0-(CKt)4-C0-0-CH2-C(CH3^-CH2-0]-x

-[CCKGHjVCO-CKCH^-OK -[GO-CMCHg^-O]-、 KSKCHA-CO-R4- (R4爲碳數1〜1 〇之有機基） 此等可爲1種類或2種類以上組合加以使用。此等之 重量平均分子量係以100〜10,000爲較佳，並以 500〜 5,0 0 0爲最佳。 上述一般式（I)中之R3所示之含有4個以上碳原子 之4價的有機基，係以四羧酸酐殘基爲較佳，例如有下述 式所各自表示之基。 -13- 201026806 [化7] 及：0€OCCC ：〇〇_0： ί 严-[CCKGHjVCO-CKCH^-OK -[GO-CMCHg^-O]-, KSKCHA-CO-R4- (R4 is an organic group having 1 to 1 carbon atoms). These may be used in combination of 1 type or more. use. The weight average molecular weight of these is preferably from 100 to 10,000, and is preferably from 500 to 5,000. The tetravalent organic group having 4 or more carbon atoms represented by R3 in the above general formula (I) is preferably a tetracarboxylic anhydride residue, and is, for example, a group represented by the following formula. -13- 201026806 [化7] and: 0€OCCC :〇〇_0: ί strict

Xr°XX^ltX. . XHtx o )〇ϋ：€Γαο:、：χΛχ. x xrtxr tx ^ x^ogicrtx ch3 ch3 j ⑩ )〇r°t>〇-〇:. yykux. 及―众、 此等可爲1種類或2種類以上組合加以使用。R3係以 含有4〜27個碳原子之四羧酸酐殘基爲更佳’並以含有4 〜20個碳原子之四竣酸酐殘基爲最佳，另以含有6〜18個 碳原子之四羧酸酐殘基爲極佳。 此外，上述一般式（I)中之η及m係各自獨立表示 卜1〇〇之整數，並以1〜50之整數爲最佳。 (A)聚胺基甲酸乙酯醯亞胺樹脂，可以溶液聚合法 等一般方法加以合成。舉例而言，如係溶液聚合法時，所 生成之聚胺基甲酸乙酯醯亞胺樹脂可溶解之溶劑，例如有 在N-甲基-2-吡咯烷酮（NMP)等中將二異氰酸酯及二醇 溶解，在7〇°C〜180°C使其反應1〜5小時，而合成胺基甲 酸乙酯低聚物。接著，添加四羧酸二酐，並在70°C〜180 -14- 201026806 °C使其反應1〜10小時而得到聚胺基甲酸乙酯醯亞胺樹脂 之NMP溶液。其後，亦可進一步添加1價之醇類、肟、 胺、異氰酸酯、酸酐等而繼續反應，並修飾聚胺基甲酸乙 酯醯亞胺樹脂之末端。此外，在合成時，亦可將水、醇類 、三級胺等作爲觸媒而使用。 所得到之聚胺基甲酸乙酯醯亞胺樹脂溶液，亦可配合 目的，而藉由水之再沈澱法等將聚胺基甲酸乙酯醯亞胺樹 φ 脂加以分離。構成胺基甲酸乙酯低聚物之二異氰酸酯及二 醇之組成比，相對於二異氰酸酯1.0 mol，係以二醇成分 爲0.1〜1.0 mol爲較佳。構成聚胺基甲酸乙酯醯亞胺樹脂 - 之聚胺基甲酸乙酯低聚物及四羧酸二酐之組成比，相對於 聚胺基甲酸乙酯低聚物1.0 mol，係以四羧酸二酐成分爲 0.1〜2.0 mol爲較佳。 本發明之（A)聚胺基甲酸乙酯醯亞胺樹脂，在以四 氫呋喃爲溶劑之凝膠滲透色層分析法進行測定之聚苯乙烯 φ 換算之重量平均分子量，係以5,000〜500,000爲較佳’並 以10,000〜100,000爲較佳。重量平均分子量未達5,000 時，樹脂之強度有降低之傾向’又如超過500，000時，樹 脂之溶解性則有劣化之傾向。 樹脂糊漿中之（A)成分之配合量’如以樹脂糊漿中 之固態成分全量爲基準’係以10〜50質量％爲較佳。此配 合量如超過5 0質量％時，硬化性有降低之傾向’又如未達 1 0質量％時，其在B階狀態下之晶片接著性有降低之傾向 -15- 201026806 (β)成分之熱硬化性樹脂’例如以環氧樹脂爲較佳 。此外’ （B)成分亦可使用含有環氧樹脂、及苯酚樹脂 或分子中有苯酚性羥基之化合物、及硬化促進劑之樹脂混 合物。藉由含有（B)熱硬化性樹脂，樹脂糊漿在與封止 材料進行同時硬化後即可獲得高度之信賴性。 環氧樹脂，係於分子內含有至少2個環氧基者，基於 硬化性或硬化物特性之觀點，係以苯酚之環氧丙基醚型之 環氧樹脂爲較佳。此種樹脂，例如有雙酣A、雙酣AD、 ^ 雙酚S、雙酚F、或鹵化雙酚A及環氧氯丙烷之縮合物、 苯酚酚醛清漆樹脂之環氧丙基醚、甲酚酚醛清漆樹脂之環 氧丙基醚、雙酚A酚醛清漆樹脂之環氧丙基醚。此等可爲 - 1種類或2種類以上組合加以使用。 苯酚樹脂，係於分子內具有至少2個苯酚性羥基者， 例如苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、雙酚A酚醛 清漆樹脂、聚-P-乙烯基苯酚、苯酚芳烷樹脂。此等可爲1 種類或2種類以上組合加以使用。 〇 在本發明之樹脂糊漿中，（B )熱硬化性樹脂基於硬 化膜之硬化性及信賴性之觀點，係以併用苯酚樹脂或分子 中具有苯酚性羥基之化合物使用者爲較佳。 (B)成分中，苯酚樹脂或分子中具有苯酚性羥基之 化合物之配合量，相對於環氧樹脂1〇〇質量份’係以1〜 150質量份爲較佳，並以20〜120質量份爲更佳’又以50 〜100質量份爲最佳。 本發明之樹脂糊漿’基於進一步提升環氧樹脂之硬化 -16 - 201026806 性之觀點，可在環氧樹脂外更含有硬化促進劑。硬化促進 劑，只要是可用於使環氧樹脂硬化者即可，並無特別之限 制。此種硬化促進劑，例如有咪唑類、二氰基二醯胺衍生 物、二羧酸二醯肼、三苯基膦、四苯基錢四苯基硼酸酯、 2-乙基-4-甲基咪唑-四苯基硼酸酯、1,8-二氮雙環（5,4,0 )十一碳烯-7-四苯基硼酸酯。此等可爲1種類或2種類以 上組合加以使用。 φ (B)成分中，硬化促進劑之配合量，相對於環氧樹 脂1〇〇質量份，係以0.5〜50質量份爲較佳，並以1〜10 質量份爲最佳。此配合量如超過50質量份時，樹脂糊漿 . 之保管安定性將有降低之虞。 此外，（B)熱硬化性樹脂，亦可使用在1分子中具 有至少2個熱硬化性醯亞胺化合物者。此種化合物之例子 ，有鄰雙馬來酸酐縮亞胺苯、間雙馬來酸酐縮亞胺苯、對 雙馬來酸酐縮亞胺苯、1,4-雙（p-馬來酸酐縮亞胺枯烯基 φ )苯、1，4-雙（in-雙馬來酸酐縮亞胺枯烯基）苯等。此等 可爲1種類或2種類以上組合加以使用。進一步，醯亞胺 化合物，係以使用下述一般式（IV )〜（VI )所示之醯亞 胺化合物爲較佳。 [化8]Xr°XX^ltX. . XHtx o )〇ϋ:€Γαο:,:χΛχ. x xrtxr tx ^ x^ogicrtx ch3 ch3 j 10 )〇r°t>〇-〇:. yykux. and ―众, these It can be used in combination of one type or two types or more. R3 is preferably a tetracarboxylic anhydride residue having 4 to 27 carbon atoms and is preferably a tetracarboxylic anhydride residue having 4 to 20 carbon atoms, and further containing 4 to 18 carbon atoms. The carboxylic anhydride residue is excellent. Further, η and m in the above general formula (I) each independently represent an integer of 1 ,, and are preferably an integer of 1 to 50. (A) Polyurethane quinone imine resin can be synthesized by a general method such as solution polymerization. For example, in the case of a solution polymerization method, the resulting polyurethane urethane resin can dissolve a solvent, for example, diisocyanate and two in N-methyl-2-pyrrolidone (NMP) or the like. The alcohol is dissolved, and the reaction is carried out at 7 ° C to 180 ° C for 1 to 5 hours to synthesize an ethyl urethane oligomer. Next, tetracarboxylic dianhydride is added and reacted at 70 ° C to 180 - 14 to 201026806 ° C for 1 to 10 hours to obtain a NMP solution of a polyurethane urethane resin. Thereafter, a monovalent alcohol, an anthracene, an amine, an isocyanate, an acid anhydride or the like may be further added to continue the reaction, and the terminal of the polyethylene urethane resin may be modified. Further, at the time of synthesis, water, an alcohol, a tertiary amine or the like may be used as a catalyst. The obtained polyurethane urethane resin solution can also be separated by a water reprecipitation method or the like by a water reprecipitation method or the like. The composition ratio of the diisocyanate and the diol which constitute the urethane oligomer is preferably 0.1 to 1.0 mol based on 1.0 mol of the diisocyanate. The composition ratio of the polyurethane urethane oligomer and the tetracarboxylic dianhydride constituting the polyurethane urethane resin is 1.0 mol based on the polyurethane oligomer, and is tetracarboxylic acid. The acid dianhydride component is preferably 0.1 to 2.0 mol. The (A) polyurethane phthalimide resin of the present invention has a weight average molecular weight in terms of polystyrene φ measured by a gel permeation chromatography method using tetrahydrofuran as a solvent, and is 5,000 to 500,000. It is better to use 10,000 to 100,000. When the weight average molecular weight is less than 5,000, the strength of the resin tends to decrease. When the weight average molecular weight exceeds 500,000, the solubility of the resin tends to deteriorate. The amount of the component (A) in the resin syrup is preferably 10 to 50% by mass based on the total amount of the solid component in the resin syrup. When the amount is more than 50% by mass, the hardenability tends to decrease. If the amount is less than 10% by mass, the wafer adhesion in the B-stage state tends to decrease. -15 - 201026806 (β) component The thermosetting resin 'is preferably made of an epoxy resin, for example. Further, as the component (B), a resin mixture containing an epoxy resin, a phenol resin, a compound having a phenolic hydroxyl group in the molecule, and a curing accelerator may be used. By containing (B) a thermosetting resin, the resin paste can be highly cured after being simultaneously hardened with the sealing material. The epoxy resin is preferably one having at least two epoxy groups in the molecule, and is preferably an epoxy resin of a phenol epoxypropyl ether type from the viewpoint of curability or properties of the cured product. Such a resin may, for example, be bismuth A, biguanide AD, bisphenol S, bisphenol F, or a condensate of halogenated bisphenol A and epichlorohydrin, a epoxidized propyl phenol of a phenol novolac resin, cresol Epoxy propyl ether of novolak resin, epoxy propyl ether of bisphenol A novolak resin. These may be used in a combination of -1 type or 2 types or more. The phenol resin is one having at least two phenolic hydroxyl groups in the molecule, and examples thereof include a phenol novolak resin, a cresol novolak resin, a bisphenol A novolac resin, a poly-P-vinylphenol, and a phenol aralkyl resin. These can be used in combination of 1 type or more types. In the resin syrup of the present invention, (B) the thermosetting resin is preferably a phenol resin or a compound having a phenolic hydroxyl group in the molecule, based on the hardenability and reliability of the hardened film. In the component (B), the compounding amount of the phenol resin or the compound having a phenolic hydroxyl group in the molecule is preferably 1 to 150 parts by mass based on 1 part by mass of the epoxy resin, and is 20 to 120 parts by mass. For better 'again, 50 to 100 parts by mass is the best. The resin paste of the present invention can further contain a hardening accelerator in addition to the epoxy resin based on the viewpoint of further enhancing the hardening of the epoxy resin -16 - 201026806. The hardening accelerator is not particularly limited as long as it can be used to harden the epoxy resin. Such hardening accelerators are, for example, imidazoles, dicyanodiamine derivatives, dicarboxylic acid diterpenes, triphenylphosphine, tetraphenyl octaphenyl boronate, 2-ethyl-4- Methylimidazole-tetraphenylborate, 1,8-diazabicyclo(5,4,0)undecene-7-tetraphenylborate. These can be used in combination of 1 type or 2 types. In the φ (B) component, the amount of the curing accelerator is preferably 0.5 to 50 parts by mass, and preferably 1 to 10 parts by mass, per part by mass of the epoxy resin. When the compounding amount is more than 50 parts by mass, the storage stability of the resin paste will be lowered. Further, as the (B) thermosetting resin, those having at least two thermosetting quinone imine compounds in one molecule may be used. Examples of such compounds are o-p-maleic anhydride imide benzene, m-bis-maleic anhydride imide benzene, p-maleic anhydride imide benzene, 1,4-bis (p-maleic anhydride). Amine cumenyl φ) benzene, 1,4-bis (in-bis-maleic anhydride acetin), benzene, and the like. These may be used in combination of one type or two types or more. Further, the quinone imine compound is preferably a quinone imine compound represented by the following general formulas (IV) to (VI). [化8]

-17- (V) 201026806 [化9]-17- (V) 201026806 [Chemistry 9]

[化 10][化10]

上述式（iv)〜（vi)中，X及y係各自獨立表示-〇-、-CH〗-、-CF2-、-S〇2-、、-CO-、-C(CH3)2-或- C(CF3)2-, R"、R12、R13、R14、R15、R16、R17 及 R18，係 各自獨立爲氫原子、低級烷基、低級烷氧基、氟原子、氯 原子或溴原子，D爲具有伸乙基性不飽和雙鍵之二羧酸殘 基，p爲0〜4之整數。 (B) 熱硬化性樹脂之配合量，相對於（A)成分100 質量份，必須爲250〜500質量份，並以260〜450質量份 爲較佳，另以260〜370質量份爲最佳。該配合量如在250 〜5 00質量份之範圍內時，其柔軟性優良，可以充分地減 低在B階狀態下之黏著性，且亦可提升熱時剪切強度（ die shear strength ) ° (C) 成分之塡料，例如有銀粉、金粉、銅粉等之導 -18- 201026806 電性（金屬）塡料；二氧化矽、氧化鋁、二氧化鈦、玻璃 、氧化鐵、陶瓷等之無機物質塡料等。藉由含有（C)塡 料，就可賦予樹脂糊漿在印刷時具有必要之搖變性。 塡料之中，銀粉、金粉、銅粉等之導電性（金屬）塡 料，可基於對接著劑賦予導電性、傳熱性、或搖變性之目 的而添加。此外，二氧化矽、氧化鋁、二氧化鈦、玻璃、 氧化鐵、陶瓷等之無機物質塡料，則可基於對接著劑賦予 Φ 低熱膨脹性、低吸濕性、搖變性之目的而添加。此等可爲 1種類或2種類以上組合加以使用。 此外，用以提升半導體裝置之電氣信賴性之塡料，亦 - 可添加無機離子交換體。無機離子交換體，其有效者例如 有將糊漿硬化物在熱水中萃取時，在水溶液中被萃取之離 子，例如Na+、K+、Cl—、F_、RCOO-、Br·等之被認爲具有 離子捕捉作用者。此種離子交換體，例如有天然生產之沸 石、沸石類、酸性白土、白雲石、水滑石類等之天然礦物 ❿ 、人工合成之合成沸石等。 此等之導電性塡料或無機物質塡料，其各自可爲1種 類或2種類以上組合加以使用。此外，在不損及物性之範 圍內’亦可將導電性塡料之1種以上與無機物質塡料之1 種以上加以混合使用。 本發明之樹脂糊漿中，基於提升其印刷性，並進一步 減少黏著性之觀點，其（C )成分，係以含有球狀二氧化 矽微粒子爲較佳。 球狀二氧化矽微粒子之平均粒徑，係以50 nm〜2000 -19 - 201026806 nm爲較佳’並以100 nm〜1000 nm爲更佳，另以200 nm 〜800 nm爲最佳。 (C)塡料之配合量’相對於（a)成分1〇〇質量份， 係以1〜200質量份爲較佳，並以30〜17〇質量份爲更佳 ’另以60〜140質量份爲最佳。該塡料之配合量如基於賦 予樹脂糊漿充分之搖變性（例如，搖變指數：1.5以上） 之觀點，係以1質量份以上爲較佳。進一步，該塡料之配 合量’如基於印刷性及接著性之觀點，係以200質量份以 _ 下爲較佳’配合量如超過200質量份時，硬化物之彈性率 會變高’其結果’晶粒結著材料之應力緩和能會有降低， 且半導體裝置之實裝信賴性降低之虞。 _ (C)塡料之混合•混練，可藉由適當地組合一般之 攪拌機、自動乳缽機、三輥滾輥、球磨機等之分散機而進 行。 (D )成分之印刷用溶劑，係以可將（C )塡料均一地 進行混練或分散之溶劑中，加以選擇者爲較佳。此外，考 ◎ 慮防止在印刷時溶劑之揮發，係以選擇沸點在1 00 °C以上 之溶劑爲較佳。藉由（D )印刷用溶劑，就可以調整樹脂 糊漿之黏度。 上述印刷用溶劑，例如有N-甲基-2-吡咯烷酮、二乙 二醇二甲醚（亦稱爲Diglyme)、三乙二醇二甲醚（亦稱 爲Triglyme)、二乙二醇二乙醚、2-(2-甲氧基乙氧基） 乙醇、r - 丁內酯、異佛爾酮、卡必醇、卡必醇乙酸酯、I ，3-二甲基-2-咪唑啉二酮、醋酸2- (2-丁氧基乙氧基）乙 -20- 201026806 醋、乙基溶纖劑、乙基溶纖劑乙酸酯、丁基溶纖劑、二噁 烷、環己酮、茴香醚’以及作爲印刷用油墨之溶劑使用且 以石油蒸餾物爲主體之溶劑。此等可爲1種類或2種類以 上組合加以使用。 上述（D )印刷用溶劑之配合量，係以樹脂糊漿之固 態成分爲3 0〜9 0質量％爲較佳，並以3 5〜7 5質量％爲更 佳，另以40〜60質量％爲最佳。上述固態成分如在30質 φ 量％以上時，其基於糊漿乾燥後之體積減少所導致之形狀 變化受抑制的觀點，係較佳者。又如在90質量％以下時， 其基於糊漿之流動性及印刷作業性提升的觀點，係較佳者 〇 樹脂糊漿在印刷中如注意到泡、空隙之發生時，可在 上述（D )印刷用溶劑中添加脫泡劑、破泡劑、抑泡劑等 之添加劑而有其效果。此等之添加量，基於使其抑泡效果 得以發揮之觀點，如以（D )印刷用溶劑及添加劑之總量 e 爲基準時，係以0.01質量％以上爲較佳，又基於接著性或 糊漿之黏度安定性之觀點，則以1 0質量％以下爲較佳。 此外，爲使接著力提升起見，亦可在樹脂糊漿中，適 當地添加具有羧酸末端基之丁二烯之均聚物或共聚物、矽 烷偶合劑、鈦偶合劑、非離子系界面活性劑、氟系界面活 性劑、聚矽酮系添加劑等。 具有羧酸末端基之丁二烯之均聚物或共聚物，例如有 在主鏈上導入丙烯腈之低分子量液狀聚丁二烯且末端具有 钱酸者，「Hycer CTBN-2009X 1 62、「CTBN- 1 3 00x3 1」、 -21 - 201026806 「CTBN-1 300x8」、「CTBN- 1 3 00x 1 3」、「CTBNX-1 3 00x 9」（皆爲宇部興產株式會社製）或具有羧酸基之低分子 量液狀聚丁二烯丁二烯’即「NISS〇-pB-c-200〇j (日本 曹達株式會社製）等。此等可爲1種類或2種類以上組合 加以使用。In the above formulae (iv) to (vi), X and y each independently represent -〇-, -CH-, -CF2-, -S〇2-, -CO-, -C(CH3)2- or - C(CF3)2-, R", R12, R13, R14, R15, R16, R17 and R18 are each independently a hydrogen atom, a lower alkyl group, a lower alkoxy group, a fluorine atom, a chlorine atom or a bromine atom. D is a dicarboxylic acid residue having an ethylenically unsaturated double bond, and p is an integer of 0 to 4. (B) The amount of the thermosetting resin to be added is preferably from 250 to 500 parts by mass, more preferably from 260 to 450 parts by mass, and most preferably from 260 to 370 parts by mass, per 100 parts by mass of the component (A). . When the compounding amount is in the range of 250 to 500 parts by mass, the flexibility is excellent, the adhesion in the B-stage state can be sufficiently reduced, and the die shear strength ° ( C) Ingredients such as silver powder, gold powder, copper powder, etc. -18- 201026806 Electrical (metal) tantalum; inorganic substances such as cerium oxide, aluminum oxide, titanium dioxide, glass, iron oxide, ceramics, etc. Materials and so on. By containing the (C) mash, the resin syrup can be imparted with the necessary shakeability at the time of printing. Among the materials, conductive (metal) materials such as silver powder, gold powder, and copper powder can be added for the purpose of imparting conductivity, heat conductivity, or shake to the adhesive. Further, inorganic material materials such as cerium oxide, aluminum oxide, titanium oxide, glass, iron oxide, and ceramics may be added for the purpose of imparting Φ low thermal expansion property, low moisture absorption property, and shaking property to the adhesive. These may be used in combination of 1 type or 2 types or more. In addition, an inorganic ion exchanger can be added to increase the electrical reliability of the semiconductor device. The inorganic ion exchanger is effective, for example, when the paste hardened material is extracted in hot water, ions extracted in the aqueous solution, such as Na+, K+, Cl-, F_, RCOO-, Br, etc. are considered Has an ion trapping effect. Such an ion exchanger is, for example, a natural mineral such as a naturally occurring zeolite, a zeolite, an acid white clay, a dolomite or a hydrotalcite, or a synthetic zeolite which is artificially synthesized. Each of the conductive or inorganic material materials may be used in combination of one type or two or more types. In addition, one or more types of conductive materials may be mixed with one or more kinds of inorganic material materials in a range that does not impair the physical properties. In the resin syrup of the present invention, the component (C) is preferably a spherical cerium oxide microparticle based on the viewpoint of improving the printability and further reducing the adhesion. The average particle diameter of the spherical cerium oxide microparticles is preferably 50 nm to 2000 -19 to 201026806 nm and more preferably 100 nm to 1000 nm, and more preferably 200 nm to 800 nm. (C) The amount of the mixture of the ingredients is preferably from 1 to 200 parts by mass, and more preferably from 30 to 17 parts by mass, based on 1 part by mass of the component (a). The best is the best. The blending amount of the pigment is preferably 1 part by mass or more based on the viewpoint of imparting sufficient shake (for example, a rocking index: 1.5 or more) to the resin paste. Further, the blending amount of the tantalum is as high as 200% by mass, based on the printability and the adhesion, and the elastic modulus of the cured product becomes high when the blending amount is more than 200 parts by mass. As a result, the stress relaxation property of the grain-bonding material is lowered, and the mounting reliability of the semiconductor device is lowered. _ (C) Mixing of kneading materials and kneading can be carried out by appropriately combining a dispersing machine such as a general mixer, an automatic nip machine, a three-roll roller, a ball mill or the like. The solvent for printing of the component (D) is preferably a solvent which can be uniformly kneaded or dispersed by the (C) dip. Further, it is preferable to select a solvent having a boiling point of 100 ° C or more in order to prevent evaporation of the solvent during printing. The viscosity of the resin paste can be adjusted by (D) a solvent for printing. The above printing solvent is, for example, N-methyl-2-pyrrolidone, diethylene glycol dimethyl ether (also known as Diglyme), triethylene glycol dimethyl ether (also known as Triglyme), diethylene glycol diethyl ether. , 2-(2-methoxyethoxy)ethanol, r-butyrolactone, isophorone, carbitol, carbitol acetate, I,3-dimethyl-2-imidazoline Ketone, 2-(2-butoxyethoxy)ethyl acetate-20- 201026806 vinegar, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone, fennel Ether' and a solvent used as a solvent for printing ink and mainly composed of petroleum distillate. These can be used in combination of 1 type or 2 types. The amount of the solvent for printing (D) is preferably from 30 to 90% by mass of the solid content of the resin paste, more preferably from 3 5 to 75% by mass, and further preferably from 40 to 60% by mass. % is the best. When the solid content is 30% by mass or more, it is preferable from the viewpoint that the shape change due to the decrease in volume after drying of the paste is suppressed. In addition, when it is 90% by mass or less, based on the viewpoint of the fluidity of the paste and the improvement of the printing workability, it is preferable that the resin paste can be in the above-mentioned (D) when the foam is observed in the printing. An additive such as a defoaming agent, a foam breaker, or a foam suppressing agent is added to the solvent for printing to have an effect. The amount of such addition is preferably 0.01% by mass or more based on the total amount e of the solvent for printing and the additive, based on the viewpoint of the foaming effect of (D), and based on the adhesion or From the viewpoint of the viscosity stability of the paste, it is preferably 10% by mass or less. Further, in order to enhance the adhesion, a homopolymer or a copolymer of a butadiene having a carboxylic acid terminal group, a decane coupling agent, a titanium coupling agent, and a nonionic interface may be appropriately added to the resin syrup. An active agent, a fluorine-based surfactant, a polyketone-based additive, or the like. A homopolymer or copolymer of butadiene having a carboxylic acid terminal group, for example, a low molecular weight liquid polybutadiene having acrylonitrile introduced into the main chain and having a terminal acid acid, "Hycer CTBN-2009X 1 62, "CTBN-1 3 00x3 1", -21 - 201026806 "CTBN-1 300x8", "CTBN-1 3 00x 1 3", "CTBNX-1 3 00x 9" (all manufactured by Ube Industries, Ltd.) or have A low molecular weight liquid polybutadiene butadiene of a carboxylic acid group, that is, "NISS〇-pB-c-200〇j (made by Nippon Soda Co., Ltd.), etc. These may be used in combination of one type or two types or more. .

樹脂糊漿之搖變指數，係以1.0〜8.0爲較佳。樹脂糊 漿之搖變指數如在1 · 〇以上時’以印刷法所供給·塗佈之 糊漿中發生之懸垂性將可受抑制，且可保持印刷形狀在良 Q 好之狀態下。進一步’該樹脂糊漿之搖變指數如在8.0以 下時，以印刷法所供給·塗佈之糊漿中發生之「缺少」或 稀疏模糊等將可受抑制。 - 樹脂糊漿之黏度（25 °C )，係以1〜1 000 Pa · s爲較 佳。樹脂糊漿之黏度如係1〜1 〇〇〇 Pa · s時，基於印刷作 業性之觀點係適合者。此外，樹脂糊漿之黏度，係以根據 印刷法之種類而適當調整者爲較佳，例如在網版印刷等其 罩開口部有篩孔時，考慮篩孔部之通過性，係以調整至1 〇 〜1 00 Pa · s之範圍爲較佳，而如係模版等時，則以調整 至20〜50 Pa· s之範圍爲較佳。此外，乾燥後之糊漿上殘 存之空隙如有很多時，其係以調整至1 50 Pa · s以下之黏 度者爲有效。 上述黏度，係使用E型旋轉黏度計，在25 °C、旋轉 數0.5 rpm之條件下進行測定之値。搖變指數，則定義爲 使用E型旋轉黏度計，在25°C、旋轉數1 rpm之條件下測 定時之値，以及在2 5 °C、旋轉數10 rpm之條件下測定時 -22- 201026806 値度 比阽 其之 ’ 下 値m 之ΓΡ 數 指 變 搖 度 黏 之 下 m 所得到之晶粒結著用樹脂糊漿，42合金導線架或銅導 線架等之導線架；或聚醯亞胺樹脂、環氧樹脂、聚醯亞胺 系樹脂等之塑膠薄膜；進而，在玻璃不織布等之基材上使 聚醯亞胺樹脂、環氧樹脂、聚醯亞胺系樹脂等之塑膠發生 含浸、硬化者；或者，在氧化鋁等之陶瓷製支持部件上， @ 以印刷法供給、塗佈，而進行B階化者。藉此，即可得到 附有B階接著劑之支持基板。在該附有B階接著劑之支持 基板上，再貼附上1C、LSI等之半導體元件（晶片），經 - 加熱後將晶片接合於支持基板上。其後，藉由使樹脂糊漿 ^ 進行後硬化之步驟，晶片就可以搭載於支持基板上。該樹 脂糊漿之後硬化，如果在實裝組裝步驟中並無問題時，亦 可在封止材料之後硬化步驟時一起進行。 本發明之半導體裝置之製造方法，係至少包含：在基 〇 板上塗佈樹脂糊漿並形成塗膜之塗佈步驟、以及在該塗膜 上搭載半導體晶片之半導體晶片搭載步驟，較佳者應更包 含在塗佈步驟後將塗膜乾燥並進行B階化之乾燥步驟，惟 更具體而言，係包含上述各步驟者。此外，本發明之半導 體裝置，係利用包含以上各步驟之製造方法所製造者。 上述晶粒結著用樹脂糊漿係含有溶劑者，惟如在半導 體裝置之製造方法使用時，由於乾燥步驟所進行之B階化 ，溶劑大部分都揮發之故，就可以組裝出：在晶粒結著層 上之空隙少，且具有良好實裝信賴性之半導體裝置。 -23- 201026806 另一方面’在樹脂糊漿藉由印刷法進行供給、塗佈之 後，只要對封裝信賴性無影響者’亦可不經乾燥半硬化而 貼上半導體元件，其後，再加熱而將晶片接合於支持基板 上。 因此，另一本發明之半導體裝置之製造方法，係包含 :於基板上塗佈所定量之上述晶粒結著用樹脂糊漿，並於 樹脂糊漿上搭載半導體晶片之各步驟者，另一本發明之半 導體裝置’則係利用包含以上各步驟之製造方法所製造者 〇 在此’圖1’係表示本發明之半導體裝置（記憶體用 BOC構造之基板）之一種實施形態的模式斷面圖。在圖1 所示之半導體裝置100中，1C晶片等之半導體晶片2，介 由本發明之晶粒結著用樹脂糊漿所成之接著劑4，接著於 具有焊錫球8之基板6上。在此，焊錫球8，係形成於基 板6之表面上所形成之電路層14上。此外，電路層14上 並形成有光組層16。接著，半導體裝置100則具有：半導 體晶片2之連接端子則介由金屬導線等之導線1〇與基板6 以電氣相連，且利用封止樹脂1 2所封止之構成者。 以上，僅係說明本發明之較佳實施形態，惟本發明並 非限於此等之範圍。 實施例1 以下，基於實施例及比較例，進一步具體地說明本發 明。 -24- 201026806 實施例1〜3及比較例1〜3 將二苯基甲烷-4,4’-二異氰酸酯（1.0 mol)、二苯基 甲烷-2,4'-二異氰酸酯（1.〇111〇1)、以及重量平均分子量 1，〇〇〇之聚四甲二醇（0.8 mol)，於1-甲基-2-吡咯烷酮（ 以下’稱爲「NMP」）中，氮氣環境下，以100°C使其反 應1小時後，再於其中添加4,4’ -氧基二苯二酸酐（1.〇 mol ) ' NMP ( 60.0 mol )，進一步於 100 °C 下攪拌 3 小時 〇 。接著，另添加苄基醇（0.49 mol)，以100°c使其反應1 小時後’終了反應。所得到之溶液進行激烈攪拌之後，加 入水’再將所生成之沈澱物濾掉，使其於真空中、80 t：下 ' 乾燥8小時，製得聚胺基甲酸乙酯醯亞胺樹脂。所得到之 . 聚胺基甲酸乙酯醯亞胺樹脂，使用GPC進行測定之結果 ’如以聚苯乙嫌換算，其係Mw=93,700，Mn=38,800。 此外’所得到之聚胺基甲酸乙酯醯亞胺樹脂，以固態成分 濃度40質量％溶解於卡必醇乙酸酯（C a )中，即製得聚 Ο 胺基甲酸乙酯醯亞胺樹脂溶液。 此外，再準備甲酚酚醛清漆型環氧樹脂（商品名稱： YDCN-7 02S，東都化成（股）製，環氧當量mo/h」質 量份、雙酚A酚醛清漆型環氧樹脂（商品名稱：VH_41 7〇 ’大日本油墨化學工業（股）製，OH當量118) 9.9質量 份之卡必醇乙酸醋（36質量份）溶液。進—步，各自準備 四苯基鱗四苯基硼酸醋（商品名稱：TPPK，東京化成工 業（股）製）、以及AEROSIL (商品名稱：AEROSIL 380 ’曰本AEROSIL (股）製，塊狀二氧化矽微粒子）、二氧 "25 - 201026806 化矽（商品名稱：SO-C2，ADMATECHS (股）製，球狀 二氧化矽微粒子，平均粒徑500 nm )。 將此等之材料，加入自動乳缽機使其固態成分質量比 成爲下述表1所示之比率，在混練後，於5 Torr以下進行 1小時之脫泡混練，製得實施例1〜3及比較例1〜3之晶 粒結著用樹脂糊漿。此外，表1中之卡必醇乙酸酯（CA) 之配合量，係表示在聚胺基甲酸乙酯醯亞胺樹脂溶液中、 以及環氧樹脂及苯酚樹脂之卡必醇乙酸酯溶液中，所含有 作爲溶劑之卡必醇乙酸酯之量。 此外，該樹脂糊漿之特性，係評價在B階狀態下將光 組塗佈基板進行壓著後之貼附性（黏著性）。貼附性之評 價方法，係如以下所示。將實施例及比較例所製作之樹脂 糊漿，塗佈於評價用基板上，於ll〇°C之烘箱中加熱乾燥 1小時，而形成B階狀態之塗膜（晶粒結著層）。在此， 所謂評價用基板，係指在MCL-E679F基板（日立化成工 業株式會社製）上塗佈有阻焊光組AUS-308 C大日本油墨 製）者。其後，在晶粒結著層上將10 mmx 12 mm之評價 用基板，於30°C之熱盤上以5 kgf之負重進行60秒之壓 著。將其在壓著後以上下顛倒之方式，觀察所壓著之一側 的基板是否落下。其結果示於表1。此外，表1中’ 「A 」係表示壓著後基板未貼附而落下者，「B」則表示壓著 後基板仍保持貼附之狀態者。 進一步，該樹脂糊漿之特性，係以壓著半導體晶片’ 再調査糊漿後硬化後之250°C下之熱時剪切強度而進行之 201026806 。熱時剪切強度之測定方法，係如以下所示者。將實施例 及比較例所製作之樹脂糊漿，印刷於42合金導線架上， 再以1 l〇°C之烘箱乾燥60分鐘。其後，在樹脂糊漿上將5 mmx5 mm之砍晶片（厚度0.5 mm)，於200°C之熱盤上 以5 kgf之負重進行1秒之壓著，再以180 °C之烘箱使其 加熱、硬化60分鐘。將其使用自動接著力試驗機（商品 名稱：serie-4000，泰吉公司製），測定在250〇C下之剪斷 φ 強度（kgf/晶片）。其結果如表1所示。 [表1] 實施例 實施例 實施例 比較例 比較例 比較例 1 2 3 1 2 3 (A) 聚胺基甲酸乙酯醯亞胺 64 64 64 64 64 64 (B) 環氧樹脂 YDCN-702S 100 140 160 200 60 80 苯酚樹脂 VH-4170 67 93 109 133 40 53 硬化促進劑 TPPK 2 2 2 2 2 2 (A)相對於100質量份之配合量 (質量份） 264 367 420 159 520 211 (C) 塡料 Aerosil 380 15 15 15 15 15 15 SO-C2 60 60 60 60 60 60 (D) 印刷用溶劑 CA 370 460 650 800 270 320 貼附性 A A A B B A 熱時剪切強度（kg觸片） 11.8 11.8 10.9 9.6 11 —氺 *B階化後，雖黏性降低，但發生裂縫無法進行壓著。 如表1所示，得知本發明之樹脂糊漿（實施例1〜3 ) ’在B階化後，於室溫條件下，其黏度充分地減低，相較 於傳統上之樹脂糊漿（比較例1〜3)，可將基板在直接重 -27- 201026806 疊之狀態下進行搬運。此外，本發明之樹脂糊漿’其在晶 片壓著、後硬化之後，於250 °C下之熱時剪切強度’相較 於傳統之樹脂糊漿亦爲高者，得知其具有高晶片接著力及 耐熱性。 【圖式簡單說明】 [圖1]表示本發明之半導體裝置之一實施形態之模式 剖面圖。 _ 【主要元件符號說明】 2 :半導體晶片 - 4 :接著劑 . 6 :基板 8 :焊錫球 1〇 :金屬導線 1 2 :封止樹脂 〇 100 :半導體裝置 -28-The rocking index of the resin paste is preferably 1.0 to 8.0. When the rocking index of the resin paste is 1 or more, the drapability which occurs in the paste supplied and coated by the printing method can be suppressed, and the printing shape can be maintained in a good condition. Further, when the rocking index of the resin paste is 8.0 or less, "missing" or sparse blurring which occurs in the paste supplied and coated by the printing method can be suppressed. - The viscosity of the resin paste (25 °C) is preferably from 1 to 1 000 Pa · s. When the viscosity of the resin paste is 1 to 1 〇〇〇 Pa · s, it is suitable based on the viewpoint of printing workability. Further, the viscosity of the resin paste is preferably adjusted according to the type of the printing method. For example, when screen openings are formed in the cover opening portion such as screen printing, the passability of the mesh portion is considered to be adjusted. The range of 1 〇 1 00 Pa · s is preferable, and when it is a stencil or the like, it is preferably adjusted to a range of 20 to 50 Pa·s. Further, if there are many voids remaining on the dried syrup, it is effective to adjust the viscosity to 1 50 Pa · s or less. The above viscosity was measured using an E-type rotational viscometer at 25 ° C and a rotation number of 0.5 rpm. The rocking index is defined as the enthalpy measured using an E-type rotational viscometer at 25 ° C and a rotation of 1 rpm, and measured at 25 ° C and a rotation number of 10 rpm. 201026806 The ratio of the 値 阽 ' ' 値 値 指 指 指 指 指 指 指 指 指 指 指 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂a plastic film such as an amine resin, an epoxy resin, or a polyimide resin; and further impregnating a plastic such as a polyimide resin, an epoxy resin, or a polyimide resin on a substrate such as a glass nonwoven fabric Or a hardened person; or a ceramic support member such as alumina, which is supplied and coated by a printing method, and is B-staged. Thereby, a support substrate with a B-stage adhesive can be obtained. On the support substrate with the B-stage adhesive, a semiconductor element (wafer) such as 1C or LSI is attached, and after heating, the wafer is bonded to the support substrate. Thereafter, the wafer can be mounted on the support substrate by the step of post-hardening the resin paste. The resin paste is then hardened, and if there is no problem in the assembly process, it can also be carried out together with the hardening step after the sealing material. The method for producing a semiconductor device according to the present invention includes at least a coating step of applying a resin paste on a substrate and forming a coating film, and a semiconductor wafer mounting step of mounting a semiconductor wafer on the coating film, preferably The drying step of drying the coating film and performing the B-stage after the coating step should be further included, and more specifically, the above steps are included. Further, the semiconductor device of the present invention is manufactured by a manufacturing method including the above steps. The resin paste for crystal graining contains a solvent. However, when used in a method of manufacturing a semiconductor device, since the B-stage of the drying step is performed, most of the solvent is volatilized, so that it can be assembled: A semiconductor device having a small number of voids on the layered layer and having good mounting reliability. -23- 201026806 On the other hand, 'after the resin paste is supplied and coated by the printing method, the semiconductor element can be attached without drying and semi-hardening as long as it has no influence on the reliability of the package, and then heated again. The wafer is bonded to a support substrate. Therefore, another method of manufacturing a semiconductor device according to the present invention includes: applying a predetermined amount of the resin paste for grain formation to a substrate, and mounting each step of the semiconductor wafer on the resin paste, and the other The semiconductor device of the present invention is manufactured by a manufacturing method including the above steps. A schematic cross section of an embodiment of the semiconductor device (substrate for BOC structure for memory) of the present invention is shown in Fig. 1'. Figure. In the semiconductor device 100 shown in Fig. 1, a semiconductor wafer 2 such as a 1C wafer or the like is formed on the substrate 6 having the solder balls 8 via the resin paste for the grain-forming resin of the present invention. Here, the solder balls 8 are formed on the circuit layer 14 formed on the surface of the substrate 6. Further, a light group layer 16 is formed on the circuit layer 14. Next, in the semiconductor device 100, the connection terminal of the semiconductor wafer 2 is electrically connected to the substrate 6 via a lead wire 1 such as a metal wire, and is sealed by the sealing resin 12. The preferred embodiments of the present invention have been described above, but the present invention is not limited to the scope of the present invention. [Embodiment 1] Hereinafter, the present invention will be specifically described based on examples and comparative examples. -24- 201026806 Examples 1 to 3 and Comparative Examples 1 to 3 Diphenylmethane-4,4'-diisocyanate (1.0 mol), diphenylmethane-2,4'-diisocyanate (1.〇111 〇1), and a weight average molecular weight of 1, polytetramethylene glycol (0.8 mol), in 1-methyl-2-pyrrolidone (hereinafter referred to as "NMP"), under a nitrogen atmosphere, at 100 After reacting for 1 hour at ° C, 4,4'-oxydiphthalic anhydride (1. 〇mol ) 'NMP (60.0 mol) was further added thereto, and further stirred at 100 ° C for 3 hours. Next, benzyl alcohol (0.49 mol) was further added, and the mixture was reacted at 100 ° C for 1 hour to terminate the reaction. After the resulting solution was vigorously stirred, water was added thereto, and the resulting precipitate was filtered off, and dried under vacuum at 80 t: for 8 hours to obtain a polyurethane urethane resin. The obtained polyurethane quinone imine resin was measured by GPC. The yield was Mw = 93,700 and Mn = 38,800 in terms of polystyrene. Further, the obtained polyurethane urethane resin was dissolved in carbitol acetate (C a ) at a solid concentration of 40% by mass to obtain polyethyl amide phthalimide. Resin solution. In addition, a cresol novolac type epoxy resin (trade name: YDCN-7 02S, manufactured by Tohto Kasei Co., Ltd., epoxy equivalent mo/h) parts by mass, bisphenol A novolac type epoxy resin (product name) :VH_41 7〇'Daily Ink Chemical Industry Co., Ltd., OH equivalent 118) 9.9 parts by mass of carbitol acetate vinegar (36 parts by mass) solution. Step by step, each preparing tetraphenyl quaternary tetraphenyl borate vinegar (trade name: TPPK, Tokyo Chemical Industry Co., Ltd.), and AEROSIL (trade name: AEROSIL 380 '曰本 AEROSIL (share) system, bulk cerium oxide microparticles), dioxin "25 - 201026806 矽Product name: SO-C2, ADMATECHS (share), spherical cerium oxide microparticles, average particle size 500 nm). These materials were added to an automatic nipper to make the solid component mass ratio as shown in Table 1 below. After the kneading, the mixture was subjected to defoaming and kneading for 1 hour at 5 Torr or less to obtain a resin paste for crystal grain formation of Examples 1 to 3 and Comparative Examples 1 to 3. Further, the card in Table 1 The amount of the alcoholic acetate (CA) is expressed in the polyamine group. The amount of carbitol acetate as a solvent in the ethyl formate phthalimide resin solution and the carbitol acetate solution of the epoxy resin and the phenol resin. Further, the characteristics of the resin paste, The adhesion (adhesiveness) after the light-coated substrate was pressed in the B-stage state was evaluated. The evaluation method of the adhesion was as follows. The resin pastes prepared in the examples and the comparative examples were used. The slurry was applied onto a substrate for evaluation, and dried by heating in an oven at 11 ° C for 1 hour to form a coating film (crystal layer) in a B-stage state. Here, the substrate for evaluation refers to The MCL-E679F substrate (manufactured by Hitachi Chemical Co., Ltd.) was coated with a solder resist group AUS-308 C manufactured by Dainippon Ink. Thereafter, a substrate of 10 mm x 12 mm for evaluation was placed on the grain stratification layer and pressed on a hot plate at 30 ° C for 60 seconds under a load of 5 kgf. It was observed that the substrate on one side of the pressing was dropped after the pressing was reversed. The results are shown in Table 1. In addition, in Table 1, 'A' indicates that the substrate is not attached after being pressed, and "B" indicates that the substrate is still attached after pressing. Further, the characteristics of the resin paste were carried out by pressing the semiconductor wafer ′ and investigating the hot-time shear strength at 250 ° C after hardening of the paste, 201026806. The method for measuring the shear strength at the time of heat is as follows. The resin syrups prepared in the examples and the comparative examples were printed on a 42-electrode lead frame and dried in an oven at 1 l ° C for 60 minutes. Thereafter, a 5 mm x 5 mm chip (0.5 mm thick) was placed on the resin paste and pressed on a hot plate at 200 ° C for 1 second under a load of 5 kgf, and then oven-dried at 180 ° C. Heat and harden for 60 minutes. This was measured using a automatic adhesion tester (trade name: serie-4000, manufactured by Taiji Co., Ltd.) to measure the shear φ intensity (kgf/wafer) at 250 °C. The results are shown in Table 1. [Table 1] Examples Examples Examples Comparative Examples Comparative Example 1 2 3 1 2 3 (A) Polyurethane sulfoximine 64 64 64 64 64 64 (B) Epoxy resin YDCN-702S 100 140 160 200 60 80 Phenolic resin VH-4170 67 93 109 133 40 53 Hardening accelerator TPPK 2 2 2 2 2 2 (A) with respect to 100 parts by mass (parts by mass) 264 367 420 159 520 211 (C) Material Aerosil 380 15 15 15 15 15 15 SO-C2 60 60 60 60 60 60 (D) Solvent for printing CA 370 460 650 800 270 320 Adhesive AAABBA Thermal shear strength (kg contact) 11.8 11.8 10.9 9.6 11 - 氺 * B after the grading, although the viscosity is reduced, but the crack can not be pressed. As shown in Table 1, it was found that the resin paste of the present invention (Examples 1 to 3) 'after the B-stage, the viscosity was sufficiently reduced at room temperature, compared to the conventional resin paste ( In Comparative Examples 1 to 3), the substrate can be transported in a state of direct weight -27 - 201026806. Further, the resin paste of the present invention has a higher shear strength at a temperature of 250 ° C after the wafer is pressed and post-hardened, which is higher than that of the conventional resin paste, and is known to have a high wafer. Then force and heat resistance. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device of the present invention. _ [Main component symbol description] 2 : Semiconductor wafer - 4 : Adhesive . 6 : Substrate 8 : Solder ball 1 〇 : Metal wire 1 2 : Sealing resin 〇 100 : Semiconductor device -28-

Claims (1)

201026806 七、申請專利範圍： 1·—種晶粒結著（die bonding)用樹脂糊獎，其特 徵爲含有下述一般式（I)所表示之聚胺基甲酸乙酯醯亞 胺樹脂、熱硬化性樹脂、塡料與印刷用溶劑， 前述熱硬化性樹脂之配合量，係相對於前述聚胺基甲 酸乙酯醯亞胺樹脂100質量份，爲250~500質量份，201026806 VII. Patent application scope: 1. The resin bonding paste for die bonding is characterized by containing the polyurethane urethane resin represented by the following general formula (I), and heat. The amount of the thermosetting resin to be added to the curable resin, the coating material, and the solvent for printing is 250 to 500 parts by mass based on 100 parts by mass of the polyurethane urethane resin. [式中，R1表示含有芳香族環或脂肪族環之2價的有機基 ，R2表示分子量1〇〇〜1〇,000之2價的有機基，R3表示含 有4個以上碳原子之4價的有機基’ n及m各自獨立表示 Φ 1-100之整數]。 2. 如申請專利範圍第1項記載之晶粒結著用樹脂糊 漿，其中前述塡料含有球狀二氧化矽微粒子。 3. 一種半導體裝置之製造方法，其特徵爲含有以下 步驟， 塗佈如申請專利範圍第1項或第2項記載之晶粒結著 用樹脂糊漿於基板上以形成塗膜之塗佈步驟’與 於前述塗膜上搭載半導體晶片之半導體晶片搭載步驟 -29- 201026806 4. 如申請專利範圍第3項記載之半導體裝置之製造 方法，其中更含有於前述塗佈步驟之後，將前述塗膜進行 乾燥且B階（B-stage)化之乾燥步驟， 前述半導體晶片搭載步驟中，於經B階化之前述塗膜 上搭載半導體晶片。 5. —種半導體裝置，其特徵爲藉由如申請專利範圍 第3項或第4項記載之半導體裝置之製造方法所得。Wherein R1 represents a divalent organic group containing an aromatic ring or an aliphatic ring, R2 represents a divalent organic group having a molecular weight of 1〇〇1 to 1〇, 000, and R3 represents a tetravalent value of 4 or more carbon atoms. The organic groups 'n and m each independently represent an integer of Φ 1-100]. 2. The resin paste for grain-forming according to claim 1, wherein the mash contains spherical cerium oxide fine particles. 3. A method of manufacturing a semiconductor device, comprising the steps of: coating a coating step of a resin paste for grain-forming according to claim 1 or 2 on a substrate to form a coating film; In the method of manufacturing a semiconductor device according to the third aspect of the invention, the method of manufacturing the semiconductor device according to the third aspect of the invention, further comprising the coating film after the coating step A drying step of drying and B-stage is performed. In the semiconductor wafer mounting step, a semiconductor wafer is mounted on the B-staged coating film. A semiconductor device obtained by the method of manufacturing a semiconductor device according to the third or fourth aspect of the invention. -30--30-
TW098127608A 2008-12-17 2009-08-17 Resin paste for die bonding, method for producing semiconductor device, and semiconductor device TW201026806A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008321123 2008-12-17

Publications (1)

Publication Number Publication Date
TW201026806A true TW201026806A (en) 2010-07-16

Family

ID=42268625

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098127608A TW201026806A (en) 2008-12-17 2009-08-17 Resin paste for die bonding, method for producing semiconductor device, and semiconductor device

Country Status (6)

Country Link
JP (1) JPWO2010070947A1 (en)
KR (1) KR20110050561A (en)
CN (1) CN102246285A (en)
SG (1) SG172144A1 (en)
TW (1) TW201026806A (en)
WO (1) WO2010070947A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI566874B (en) * 2011-02-22 2017-01-21 三菱綜合材料股份有限公司 Paste for jointing and method for jointing semiconductor device and substrate

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101906248B (en) * 2010-07-08 2012-06-06 浙江大学 High compression-strength rigid-enhancement type hard polyurethane foaming plastic and preparation method thereof
JP5564405B2 (en) * 2010-11-04 2014-07-30 株式会社カネカ Bonding sheet
KR102012788B1 (en) 2015-09-23 2019-08-21 주식회사 엘지화학 Adhesive film, preparation method of semiconductor device, and semiconductor device
JP6388680B2 (en) * 2017-03-11 2018-09-12 日揮触媒化成株式会社 Manufacturing method of die attach paste for mounting semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4604682B2 (en) * 2004-01-08 2011-01-05 日立化成工業株式会社 Polyurethaneimide resin and adhesive composition using the same
JP2006241174A (en) * 2005-02-07 2006-09-14 Hitachi Chem Co Ltd Film-formed adhesive for die-bonding, and adhesive sheet and semi-conductor device by using the same
TWI416671B (en) * 2005-05-31 2013-11-21 Sumitomo Bakelite Co A pre-coated encapsulated resin composition, a semiconductor device using the same, and a method for manufacturing the same
CN101523587B (en) * 2006-10-04 2012-09-12 日立化成工业株式会社 Resin paste for die bonding, method for manufacturing semiconductor device, and semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI566874B (en) * 2011-02-22 2017-01-21 三菱綜合材料股份有限公司 Paste for jointing and method for jointing semiconductor device and substrate

Also Published As

Publication number Publication date
KR20110050561A (en) 2011-05-13
WO2010070947A1 (en) 2010-06-24
SG172144A1 (en) 2011-07-28
CN102246285A (en) 2011-11-16
JPWO2010070947A1 (en) 2012-05-24

Similar Documents

Publication Publication Date Title
TWI460249B (en) Adhesive composition, adhesive film, and method of producing semiconductor device
JP5569576B2 (en) Film adhesive for semiconductor, method for manufacturing semiconductor device, and semiconductor device
TWI493010B (en) Thin film-like adhesive for semiconductor sealing, semiconductor device, and method of manufacturing the same
US10717806B2 (en) Packaging material and film
WO1998054267A1 (en) Heat-resistant adhesives and semiconductor devices produced therewith
JP5922060B2 (en) Manufacturing method of semiconductor device
TW201120174A (en) Adhesive composition, adhesive sheet, circuit board and semiconductor device using same and method for producing same
KR101181591B1 (en) Resin paste for die bonding, method for manufacturing semiconductor device, and semiconductor device
US20070290369A1 (en) Resin Paste For Die Bonding And Its Use
TW201026806A (en) Resin paste for die bonding, method for producing semiconductor device, and semiconductor device
JP5439863B2 (en) Semiconductor sealing adhesive, semiconductor sealing film adhesive, semiconductor device and manufacturing method thereof
JP5484706B2 (en) COF semiconductor sealing film adhesive, semiconductor device manufacturing method using the adhesive, and semiconductor device
JP5157938B2 (en) Resin paste for die bonding, semiconductor device manufacturing method using the resin paste, and semiconductor device obtained by the manufacturing method
TW201038699A (en) Resin paste for die bonding, process for producing semiconductor device using the resin paste, and semiconductor device
JP3482946B2 (en) Adhesive film and semiconductor device
JP5332799B2 (en) Film-like adhesive for semiconductor sealing, semiconductor device and method for manufacturing the same
JP5362315B2 (en) Film sealing adhesive for semiconductor sealing, semiconductor device manufacturing method using the adhesive, and semiconductor device
JP2005060417A (en) Adhesive varnish for screen printing and lead frame with adhesive, resin substrate, semiconductor wafer, and semiconductor device using the same
JP5671778B2 (en) Film-like adhesive for semiconductor sealing, semiconductor device and method for manufacturing the same
JP2008112972A (en) Resin paste for die bonding, method for manufacturing semiconductor device, and semiconductor device
JP5397526B2 (en) Manufacturing method of semiconductor device
JP2005325147A (en) Method for producing polyamic acid-silica composite fine particle, method for producing polyimide-silica composite fine particle, composite fine particle and electroconductive fine particle
JP5167853B2 (en) Liquid resin composition and semiconductor device
JP5710099B2 (en) Film sealing adhesive for semiconductor sealing, semiconductor device manufacturing method using the adhesive, and semiconductor device
JP2004006832A (en) Adhesive film and semiconductor device