KR20110050561A - Resin paste for die bonding, method for producing semiconductor device, and semiconductor device - Google Patents

Abstract

[식 중, R¹은 방향족환 또는 지방족환을 포함하는 2가의 유기기를 나타내고, R²는 분자량 100~10,000의 2가의 유기기를 나타내고, R³은 4개 이상의 탄소 원자를 포함하는 4가의 유기기를 나타내고, n 및 m은 각각 독립하여 1~100의 정수를 나타낸다.]This invention contains the polyurethane imide resin represented by the following general formula (I), a thermosetting resin, a filler, and a printing solvent, The compounding quantity of a thermosetting resin is 100 weight part of polyurethane imide resins, It is related with the resin paste for die bonding which is 250-500 weight part.
However,

[Wherein, R ¹ represents a divalent organic group containing an aromatic ring or an aliphatic ring, R ² represents a divalent organic group having a molecular weight of 100 to 10,000, and R ³ represents a tetravalent organic group containing four or more carbon atoms And n and m each independently represent an integer of 1 to 100.]

Description

RESIN PASTE FOR DIE BONDING, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin paste for die bonding, a method for manufacturing a semiconductor device, and a semiconductor device. More particularly, the present invention relates to a bonding material between a semiconductor device such as an IC and an LSI, and a support member such as a lead frame or an insulating support substrate. The present invention relates to a resin paste for die bonding used as a die bonding material, a method for manufacturing a semiconductor device and a semiconductor device using the same.

Conventionally, Au-Si eutectic alloys, solders or silver pastes are known as bonding materials for ICs, LSIs, and lead frames. Moreover, the adhesive film for die bonding which added the electrically conductive filler or the inorganic filler to the adhesive film using a specific polyimide resin, and the specific polyimide resin is also proposed first (refer patent document 1-3).

Prior art literature

Patent Literature

Patent Document 1: Japanese Patent Application Laid-Open No. 07-228697

Patent Document 2: Japanese Patent Application Laid-Open No. 06-145639

Patent Document 3: Japanese Patent Application Laid-Open No. 06-264035

Although the Au-Si eutectic alloy has high heat resistance and moisture resistance, it has a problem in that it is easy to crack when applied to a large chip because of its high elastic modulus. In addition, Au-Si eutectic alloys also have a high difficulty. On the other hand, although solder is inexpensive, heat resistance is inferior and its elastic modulus is the same as that of Au-Si eutectic alloy, and it is difficult to apply it to a large chip.

On the other hand, silver paste is inexpensive, high moisture resistance is low, and the elasticity modulus is lower than Au-Si eutectic alloy and solder, and it has heat resistance enough to be applicable to the thermocompression-bonding wire bonder of 350 degreeC. Therefore, silver paste has become the mainstream of die-bonding materials at present. However, when ICs and LSIs are highly integrated, and chips are being enlarged, the IC and LSIs and the lead frame are to be bonded with silver paste, which is difficult to spread and apply the silver paste to the entire surface of the chip. .

In addition, with the recent miniaturization and weight reduction of packages, the use of an insulating support substrate has become widespread, and a method of supplying a die-bonding material by a high-volume printing method for the purpose of reducing the manufacturing cost. This is drawing attention. In such a situation, when it is going to supply and affix an adhesive film as described in the said patent documents 1-3 efficiently to an insulating support substrate, it is necessary to cut out (or punch out) to a chip size in advance and affix an adhesive film.

In the method of cut | disconnecting an adhesive film in chip size and sticking to a board | substrate, the attachment apparatus for improving production efficiency is needed. In addition, in the method of punching out an adhesive film and affixing a plurality of chip powders collectively, uselessness of an adhesive film is easy to produce. In addition, since most of the insulating support substrate is formed with the inner layer wirings inside the substrate, the surface on which the adhesive film is attached has many unevenness, voids are generated during the adhesion of the adhesive film, and reliability tends to be lowered.

Moreover, in the method of forming a die bonding material in advance in a board | substrate, and sticking a semiconductor chip there, dry die-hardening (B stage) the die-bonding material apply | coated to the board | substrate before attaching a semiconductor chip, and semiconductor there. A chip | tip is crimped | bonded and the die-bonding material is hardened for 1 hour in oven, for example as 180 degreeC. Usually, the board | substrate after B-stage die-bonding material is stored temporarily in a rack etc. every sheet. However, in recent years, in order to simplify the process management, it is required to directly handle the substrates after the die bonding material is B-staged. Overlapping substrates are temporarily stored under room temperature conditions, and are conveyed for every substrate by adsorption in the process of sticking a semiconductor chip. However, in the case of die-bonding material having tackiness (adhesiveness) after B stage formation, when directly stacked and stored, the weight of the substrate is taken as a load, the substrates are stuck together, and conveyance per sheet is impossible by adsorption. . In addition, since the film thickness and the surface roughness of a die-bonding material change even if it removes after board | substrates adhere | attach, there exists a possibility that reliability may fall. Therefore, when handling the board | substrate after B stage directly superimposing, it is necessary to reduce tack so that boards may not stick together even if it adds a constant load on room temperature conditions after B stage.

This invention is made | formed in view of such a situation, and even if board | substrate directly superimposes after resin stage B stage, it can be easily peeled off, ie, resin for die-bonding which fully reduced the tackiness in B stage state. It is an object to provide a paste. Moreover, an object of this invention is to provide the manufacturing method of the semiconductor device using the said resin paste for die bonding, and a semiconductor device.

In order to achieve the above object, the present invention is a poly represented by the following general formula (I)

It contains urethane imide resin, a thermosetting resin, a filler, and a printing solvent, and provides the resin paste for die bonding whose compounding quantity of a thermosetting resin is 250-500 weight part with respect to 100 weight part of polyurethane imide resins.

However,

[Wherein, R ¹ represents a divalent organic group containing an aromatic ring or an aliphatic ring, R ² represents a divalent organic group having a molecular weight of 100 to 10,000, and R ³ represents a tetravalent organic group containing four or more carbon atoms And n and m each independently represent an integer of 1 to 100.]

According to such a die-bonding resin paste, the polyurethane imide resin represented by the said general formula (I) is contained with a thermosetting resin, a filler, and a printing solvent, and also by mix | blending a thermosetting resin of a predetermined range, In the B-stage state, the tackiness is sufficiently reduced, the substrates are directly stacked and stored, and then easily removed, the effect can be obtained in subsequent steps. Moreover, according to the resin paste for die bonding which has the said structure, it can supply and apply easily to the board | substrate which needs to affix a semiconductor chip at comparatively low temperature by the printing method.

In the resin paste for die bonding of this invention, it is preferable that a filler contains spherical silica microparticles | fine-particles. As a result, the tackiness in the B stage state can be further reduced.

The present invention further includes a coating step of forming a coating film by coating the resin paste for die bonding of the present invention on a substrate, and a semiconductor chip mounting step of mounting a semiconductor chip on the coating film. To provide.

According to the manufacturing method of such a semiconductor device, since the die-bonding resin paste of the present invention is used, the semiconductor chip can be affixed on a substrate at a relatively low temperature, and a semiconductor device having excellent heat resistance and chip adhesion can be obtained. You can get it.

Moreover, the manufacturing method of the semiconductor device of this invention further includes the drying process which dries and coats said coating film after the said apply | coating process, and in the said semiconductor chip mounting process, it is a semiconductor on the said coating film b-staged. It is desirable to mount the chip.

Since the resin paste for die bonding of this invention can acquire sufficient heat resistance and chip adhesiveness in the B stage state, the semiconductor device which is more reliable can be obtained by including the said drying process.

This invention also provides the semiconductor device obtained by the manufacturing method of the semiconductor device of the said invention. In such a semiconductor device, since the semiconductor chip is affixed on the board | substrate using the resin paste for die bonding of the said invention, the outstanding heat resistance and chip adhesiveness can be obtained.

DETAILED DESCRIPTION OF THE INVENTION

EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment of this invention is described in detail.

The resin paste for die bonding (henceforth only called "resin paste" according to this invention) which concerns on this invention is (A) polyurethaneimide resin represented by the following general formula (I) (henceforth " (A) component ").

[Figure 2]

[Wherein, R ¹ represents a divalent organic group containing an aromatic ring or an aliphatic ring, R ² represents a divalent organic group having a molecular weight of 100 to 10,000, and R ³ represents a tetravalent organic group containing four or more carbon atoms And n and m each independently represent an integer of 1 to 100.]

In addition, the resin paste of this invention, together with said (A) component, (B) thermosetting resin (henceforth called "(B) component"), and (C) filler (henceforth " (C) component "and (D) printing solvent (henceforth called" (D) component "). Hereinafter, each component is demonstrated in detail.

(A) Polyurethane imide resin is represented by the said General formula (I). Here, in said general formula (I), it is preferable that the divalent organic group containing the aromatic ring or aliphatic ring represented by R <^1> is a diisocyanate residue, and is represented by following General formula (II);

[Tue 3]

It is more preferable to contain 10-100 mol% of structures represented by these.

Moreover, as a remaining diisocyanate residue, following formula;

[Figure 4]

Etc. can be mentioned. These can be used 1 type or in combination of 2 or more types.

It is preferable that the divalent organic group of the molecular weight 100-10,000 represented by R <^2> in the said General formula (I) is a diol residue. Diol residues are groups derived from diols such as polybutadienediol, polyisoprenediol, polycarbonatediol, polyetherdiol, polyesterdiol, polycaprolactonediol, silicondiol and the like. R <^2> is following general formula (III) as a diol residue;

[Tue 5]

It is preferable to contain 10-100 mol% of the structure which consists of a repeating unit represented by the following.

Moreover, as a remaining diol residue, it is a following formula;

[6]

The thing which has a repeating unit, such as these, is mentioned. These can be used 1 type or in combination of 2 or more types. It is preferable that it is 100-10,000, and, as for these weight average molecular weights, it is more preferable that it is 500-5,000.

It is preferable that the tetravalent organic group containing four or more carbon atoms represented by R <^3> in the said General formula (I) is a tetracarboxylic dianhydride residue, The following formula;

[Tue 7]

The group represented by each is mentioned. These can be used 1 type or in combination of 2 or more types. As for R <^3> , it is more preferable that it is a tetracarboxylic dianhydride residue containing 4-27 carbon atoms, It is still more preferable that it is a tetracarboxylic dianhydride residue containing 4-20 carbon atoms, 6-18 It is especially preferable that it is a tetracarboxylic dianhydride residue containing a carbon atom.

In addition, n and m in the said General formula (I) need to be an integer of 1-100 each independently, and it is more preferable that it is an integer of 1-50.

(A) Polyurethane imide resin can be synthesize | combined by normal methods, such as solution polymerization method. For example, in the case of the solution polymerization method, diisocyanate and diol are melt | dissolved in the solvent in which the produced | generated polyurethaneimide resin melt | dissolves, for example, N-methyl- 2-pyrrolidone (NMP), and 70 degreeC- It reacts at 180 degreeC for 1 hour-5 hours, and synthesize | combines a urethane oligomer. Subsequently, tetracarboxylic dianhydride is added and reacted at 70 to 180 degreeC for 1 hour from 10 hours, and the NMP solution of a polyurethane imide resin can be obtained. Thereafter, if necessary, the reaction may be continued by adding a monovalent alcohol, oxime, amine, isocyanate, acid anhydride, or the like, and the terminal of the polyurethaneimide resin may be modified. In the synthesis, water, alcohol, tertiary amine or the like can also be used as a catalyst.

The obtained polyurethaneimide resin solution can also separate a polyurethaneimide resin by the reprecipitation method with water etc. according to the objective. It is preferable that the composition ratio of the diisocyanate and diol which comprise a urethane oligomer makes a diol component 0.1-1.0 mol with respect to 1.0 mol of diisocyanates. It is preferable that the composition ratio of the polyurethane oligomer and tetracarboxylic dianhydride which comprises a polyurethane imide resin makes tetracarboxylic dianhydride 0.1-2.0 mol with respect to 1.0 mol of polyurethane oligomers.

It is preferable that the weight average molecular weights of polystyrene conversion measured by the gel permeation chromatography which made tetrahydrofuran the solvent of (A) polyurethane imide resin in this invention are 5,000-500,000, and it is 10,000-100,000. More preferred. If the weight average molecular weight is less than 5,000, the strength of the resin tends to be low, and if it exceeds 500,000, the solubility of the resin tends to be inferior.

It is preferable that the compounding quantity of (A) component in a resin paste is 10-50 weight% based on the solid content whole quantity in a resin paste. When this compounding quantity exceeds 50 weight%, there exists a tendency for sclerosis | hardenability to fall, and when it is less than 10 weight%, there exists a tendency for the chip adhesiveness in B-stage state to fall.

As thermosetting resin which is (B) component, an epoxy resin is mentioned as a preferable thing, for example. Moreover, as (B) component, you may use the resin mixture containing an epoxy resin, a phenol resin, or the compound which has a phenolic hydroxyl group in a molecule | numerator, and a hardening accelerator. (B) By containing a thermosetting resin, a resin paste can obtain high reliability after simultaneous hardening with a sealing material.

An epoxy resin contains at least 2 epoxy groups in a molecule | numerator, and the glycidyl ether type epoxy resin of a phenol is preferable at the point of curability and hardened | cured material characteristic. As such resin, bisphenol A, bisphenol AD, bisphenol S, bisphenol F, or the condensate of halogenated bisphenol A and epichlorohydrin, the glycidyl ether of phenol novolak resin, and the glycidyl of cresol novolak resin And glycidyl ethers of ethers and bisphenol A novolak resins. These can be used individually by 1 type or in combination of 2 or more type.

The phenol resin has at least two phenolic hydroxyl groups in the molecule, and examples thereof include phenol novolak resins, cresol novolak resins, bisphenol A novolak resins, poly-p-vinylphenols, and phenol aralkyl resins. have. These can be used individually by 1 type or in combination of 2 or more type.

In the resin paste of this invention, it is preferable to use together the compound which has a phenolic hydroxyl group in an epoxy resin and a phenol resin or a molecule | numerator from a viewpoint of curability and reliability of a cured film (B) thermosetting resin.

It is preferable that it is 1-150 weight part with respect to 100 weight part of epoxy resins, and, as for the compounding quantity of the compound which has a phenolic hydroxyl group in a phenol resin or a molecule | numerator in (B) component, it is more preferable that it is 20-120 weight part, and 50-100 It is more preferable that it is a weight part.

The resin paste of this invention can contain a hardening accelerator with an epoxy resin from a viewpoint which can improve the curability of an epoxy resin more. The curing accelerator is not particularly limited as long as it is used for curing the epoxy resin. As such a curing accelerator, for example, imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazides, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole- Tetraphenylborate and 1,8-diazabicyclo (5,4,0) undecene-7-tetraphenylborate. These can be used individually by 1 type or in combination of 2 or more type.

It is preferable that it is 0.5-50 weight part with respect to 100 weight part of epoxy resins, and, as for the compounding quantity of a hardening accelerator in (B) component, it is more preferable that it is 1-10 weight part. When this compounding quantity exceeds 50 weight part, there exists a possibility that the storage stability of a resin paste may fall.

Moreover, as (B) thermosetting resin, the imide compound which has at least 2 thermosetting imide groups in 1 molecule can also be used. Examples of such compounds include orthobismaleimidebenzene, metabismaleimidebenzene, parabismaleimidebenzene, 1,4-bis (p-maleimidecumyl) benzene, 1,4-bis (m-maleimidecumyl ) Benzene, etc. are mentioned. These can be used individually by 1 type or in combination of 2 or more type. Moreover, it is also preferable to use the imide compound represented by following General formula (IV)-(VI) as an imide compound.

[Figure 8]

[Tue 9]

[Tue 10]

In Formulas (IV) to (VI), X and Y are each independently -O-, -CH _2- , -CF _2- , -SO _2- , -S-, -CO-, -C (CH ₃ ) ₂ -or -C (CF ₃ ) ₂ -is represented, and R ¹¹ , R ¹² , R ¹³ , R ¹⁴ , R ¹⁵ , R ¹⁶ , R ¹⁷ and R ¹⁸ are each independently a hydrogen atom or a lower alkyl group. , A lower alkoxy group, a fluorine atom, a chlorine atom or a bromine atom, D represents a dicarboxylic acid residue having an ethylenically unsaturated double bond, and p represents an integer of 0 to 4.

It is necessary for the compounding quantity of (B) thermosetting resin to be 250-500 weight part with respect to 100 weight part of (A) components, It is preferable that it is 260-450 weight part, It is more preferable that it is 260-370 weight part. If this compounding quantity is in the range of 250-500 weight part, it will be excellent in flexibility, the tackiness in B-stage state can fully be reduced, and the hot-die die share strength can also be improved.

As a filler which is (C) component, electroconductive (metal) fillers, such as silver powder, gold powder, and copper powder; inorganic substance fillers, such as silica, alumina, titania, glass, iron oxide, a ceramic, etc. are mentioned, for example. By containing (C) filler, the thixotropy required at the time of printing can be provided to a resin paste.

Among the fillers, conductive (metal) fillers such as silver powder, gold powder, and copper powder are added for the purpose of imparting conductivity, heat conductivity, or thixotropy to the adhesive. In addition, inorganic material fillers such as silica, alumina, titania, glass, iron oxide, and ceramics are added for the purpose of imparting low thermal expansion, low moisture absorption, and thixotropy to the adhesive. These can be used individually by 1 type or in combination of 2 or more type.

Moreover, you may add an inorganic ion exchanger as a filler which improves the electrical reliability of a semiconductor device. When the inorganic ion exchange material, the paste light extract cargo from hot water, for ions, for example, to be extracted in an aqueous solution, Na ^+, K ^+, Cl ^-, F ^-, RCOO ^-, Br ^- viewed ion trapping action of It is valid to be. As an example of such an ion exchanger, natural minerals, such as zeolite, zeolite, acidic clay, dolomite, hydrotalcite, etc. which are naturally produced, synthetic zeolite synthesize | combined artificially, etc. are mentioned.

These conductive fillers or inorganic fillers can be used individually by 1 type or in mixture of 2 or more types, respectively. Moreover, you may mix and use 1 or more types of electroconductive filler and 1 or more types of inorganic substance filler in the range which does not impair physical property.

In the resin paste of this invention, it is preferable to contain spherical silica microparticles as (C) component from a viewpoint of improving printability and reducing tack further.

It is preferable that the average particle diameters of a spherical silica microparticle are 50 nm-2000 nm, It is more preferable that it is 100 nm-1000 nm, It is still more preferable that they are 200 nm-800 nm.

It is preferable that it is 1-200 weight part with respect to 100 weight part of (A) component, It is more preferable that it is 30-170 weight part, and, as for the compounding quantity of (C) filler, it is especially preferable that it is 60-140 weight part. It is preferable that the compounding quantity of this filler is 1 weight part or more from a viewpoint of providing sufficient thixotropy (for example, thixotropy index: 1.5 or more) to a resin paste.

Moreover, it is preferable that the compounding quantity of this filler is 200 weight part or less from a viewpoint of printability and adhesiveness, and when compounding quantity exceeds 200 weight part, the elasticity modulus of hardened | cured material will become high, As a result, the stress relaxation ability of a die bonding material will become low, and a semiconductor There exists a possibility that the mounting reliability of a device may fall.

(C) The mixing and kneading of the filler is performed by appropriately combining dispersers such as a normal stirrer, a mixing kneader, three rolls, and a ball mill.

It is preferable to select the printing solvent which is (D) component from the solvent which can knead | mix or disperse a filler (C) uniformly. Moreover, in consideration of the volatilization prevention of the solvent at the time of printing, it is preferable to select the solvent of boiling point 100 degreeC or more. (D) By the solvent for printing, adjustment of the viscosity of a resin paste is attained.

As the printing solvent, for example, N-methyl-2-pyrrolidinone, diethylene glycol dimethyl ether (also called diglyme), triethylene glycol dimethyl ether (also called triglyme), and diethylene glycol diethyl ether , 2- (2-methoxyethoxy) ethanol, γ-butyrolactone, isophorone, carbitol, carbitol acetate, 1,3-dimethyl-2-imidazolidinone, acetic acid 2- (2-butoxy Ethoxy) ethyl, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone, anisole and other solvents mainly based on petroleum distillates used as solvents for printing inks. have. These can be used individually by 1 type or in mixture of 2 or more types.

It is preferable that solid content of a resin paste is 30 to 90 weight%, as for the compounding quantity of the said (D) printing solvent, it is more preferable that it is 35 to 75 weight%, and it is especially preferable that it is 40 to 60 weight%. If the solid content is 30% by weight or more, it is preferable from the viewpoint of suppressing the shape change based on the volume reduction after paste drying, and if it is 90% by weight or less, it is preferable from the viewpoint of improving the fluidity and print workability of the paste.

When foaming and voids are prominent during printing of the resin paste, it is effective to add additives such as a defoamer, a foaming agent, and an inhibitor in the printing solvent (D). It is preferable that they are 0.01 weight% or more on the basis of the total amount of (D) printing solvent and an additive from a viewpoint of exhibiting an inhibitory effect, and it is 10 weight% or less from a viewpoint of adhesiveness and viscosity stability of a paste. desirable.

Moreover, in order to improve adhesive force, in the resin paste, the homopolymer or copolymer of butadiene which has a carboxylic acid terminal group, a silane coupling agent, a titanium coupling agent, a nonionic surfactant, a fluorine-type surfactant, a silicone additive, etc. You may add it suitably.

As a homopolymer or copolymer of butadiene having a carboxylic acid end group, for example, "Hycer CTBN-2009 x 162", which is a low molecular weight liquid polybutadiene having an acrylonitrile introduced into its main chain and has a carboxylic acid at its terminal. , "CTBN-1300x31", "CTBN-1300x8", "CTBN-1300x13", "CTBNX-1300x9" (all are from Ube Industries Co., Ltd.), and low molecular weight liquid poly having a carboxylic acid group Butadiene, "NISSO-PB-C-2000" (made by Nippon Procurement Co., Ltd.), etc. are mentioned. These can be used individually by 1 type or in combination of 2 or more type.

It is preferable that the thixotropy index of a resin paste is 1.0-8.0. When the thixotropy index of the resin paste is 1.0 or more, there is a tendency to suppress the occurrence of sagging in the paste supplied and coated by the printing method and to maintain a good print shape. Moreover, when this thixotropy index is 8.0 or less, it exists in the tendency which can suppress generation | occurrence | production of the "wobble", a scratch, etc. in the paste supplied and apply | coated by the printing method.

It is preferable that the viscosity (25 degreeC) of a resin paste is 1-1000 Pa.s. If the viscosity of a resin paste is 1-1000 Pa * s, it is suitable from a printing workability viewpoint. In addition, it is preferable to adjust the viscosity of a resin paste suitably according to the kind of printing method, For example, when the mesh etc. are coat | covered in the mask opening part like a screen mesh board etc., in consideration of the extractability of a mesh part, 1 It is preferable to adjust to the range of -100 Pa.s, and in the case of a stencil board etc., it is preferable to adjust to the range of 20-500 Pa.s. Moreover, when only the void which remains in the paste after drying is visible, it is effective to adjust to the viscosity of 150 Pa * s or less.

The said viscosity is made into the value when it measures on 25 degreeC and the conditions of rotation speed 0.5rpm using an E-type rotational viscometer. Thixotropy index is defined by the ratio of the value measured on 25 degreeC and the conditions of 1 rpm, and the value when measured on 25 degreeC and the conditions of 10 rpm of rotations with an E-type rotational viscometer. = (Viscosity at 1 rpm) / (viscosity at 10 rpm)).

The obtained resin paste for die bonding may be a lead frame such as a 42 alloy lead frame or a copper lead frame; or a plastic film such as a polyimide resin, an epoxy resin, or a polyimide resin; or a substrate such as a glass nonwoven fabric. What impregnated and hardened plastics, such as a polyimide resin, an epoxy resin, and a polyimide-type resin; Or it can supply and apply | coat to a support member made of ceramics, such as alumina, by a printing method, and can be staged B. Thereby, the support substrate with a B stage adhesive agent is obtained. Semiconductor elements (chips), such as IC and LSI, are affixed on this B-stage adhesive support substrate, and it heats and bonds a chip | tip to a support substrate. Thereafter, the chip is mounted on the support substrate by the step of post-curing the resin paste. The post-cure of this resin paste may be performed in parallel at the time of the post-cure step of the sealing material, when there is no problem in the packaging assembly step.

The manufacturing method of the semiconductor device which concerns on this invention contains the coating process of apply | coating a resin paste on a board | substrate, and forming a coating film, and the semiconductor chip mounting process of mounting a semiconductor chip on the coating film at least, Preferably It is a method which further includes the drying process of drying a coating film and making B stage after an application | coating process, More specifically, it includes each process mentioned above. Moreover, the semiconductor device which concerns on this invention is manufactured by the manufacturing method containing each said process.

Although the said resin paste for die bonding contains a solvent, when using for the manufacturing method of a semiconductor device, since most of the solvent volatilizes by B-stage in a drying process, it is good mounting reliability with few voids in a die bonding layer. It is possible to assemble a semiconductor device having a.

On the other hand, after supplying and applying a resin paste by the printing method, if there is no influence on package reliability, a semiconductor element can be affixed without drying-hardening, after that, it can also heat and bond a chip to a support substrate.

Therefore, another method of manufacturing a semiconductor device according to the present invention includes the steps of applying a predetermined amount of the above-mentioned die-bonding resin paste onto a substrate and mounting the semiconductor chip on the resin paste. The related semiconductor device is manufactured by the manufacturing method including each process mentioned above.

Here, FIG. 1: is a schematic cross section which shows one Embodiment of the semiconductor device (substrate of memory BOC structure) of this invention. In the semiconductor device 100 shown in FIG. 1, the semiconductor chip 2, such as an IC chip, is equipped with the solder ball 8 through the adhesive agent 4 which consists of the resin paste for die bonding of this invention. It is adhered to (6). Here, the solder balls 8 are formed on the circuit layer 14 formed on the surface of the substrate 6. The resist layer 16 is formed on the circuit layer 14. In the semiconductor device 100, a connection terminal of the semiconductor chip 2 is electrically connected to the substrate 6 via a wire 10 such as a gold wire, and further sealed by a sealing resin 12. Has a configuration.

As mentioned above, although preferred embodiment of this invention was described, this invention is not limited to this.

According to this invention, the resin paste for die bonding which can be easily supplied and apply | coated by the printing method can be provided with respect to the board | substrate which needs to affix a semiconductor chip at comparatively low temperature. Moreover, the resin paste for die bonding of this invention is heat resistant, easy to handle, and is excellent in low stress and low temperature adhesiveness. In addition, since the tackiness in the B-stage state is sufficiently reduced, the substrates can be directly stacked and stored after the B-stage, contributing to the simplification of the process management at the time of assembling the semiconductor device. The resin paste for die bonding of this invention can be used suitably for insulating support substrates, such as an organic substrate, and a copper lead frame for die bonding, and can also be used for a 42 alloy lead frame. Moreover, according to this invention, the manufacturing method of the semiconductor device using the die-bonding resin paste of this invention, and the semiconductor device manufactured by such a manufacturing method can be provided.

1: is a schematic cross section which shows one Embodiment of the semiconductor device of this invention.

Example 1

EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated further more concretely based on an Example and a comparative example.

(Examples 1-3 and Comparative Examples 1-3)

Diphenylmethane-4,4'- diisocyanate (1.0 mol), diphenylmethane-2,4'- diisocyanate (1.0 mol), and polytetramethylene glycol (0.8 mol) of the weight average molecular weight 1,000 are 1, After reacting at 100 degreeC for 1 hour in -methyl-2-pyrrolidone (henceforth "NMP"), in nitrogen atmosphere, 4,4'- oxydiphthalic anhydride (1.0 mol), NMP ( 60.0 mol) was added, and also it stirred at 100 degreeC for 3 hours. Subsequently, benzyl alcohol (0.49 mol) was further added, and it stirred at 100 degreeC for 1 hour, and reaction was complete | finished. The obtained solution was poured into vigorously stirred water, and the produced precipitate was filtered off and dried in vacuo at 80 ° C. for 8 hours to obtain a polyurethaneimide resin. As a result of measuring the obtained polyurethane imide resin using GPC, it was Mw = 93,700 and Mn = 38,800 in polystyrene conversion. Furthermore, the obtained polyurethane imide resin was melt | dissolved in carbitol acetate (CA) at 40 weight% of solid content concentration, and the polyurethane imide resin solution was obtained.

In addition, 14.1 weight part of cresol novolak-type epoxy resins (brand name: YDCN-702S, product made by Totokasei Co., Ltd., epoxy equivalent 200), bisphenol A novolak resin (brand name: VH-4170, Dainipek ink Kagaku industry Co., Ltd.) ), OH equivalents 118) 9.9 parts by weight of a carbitol acetate (36 parts by weight) solution was prepared. Moreover, tetraphenyl phosphonium tetraphenyl borat (brand name: TTPK, Tokyo Kasei Kogyo Co., Ltd.), and aerosil (brand name: AEROSIL 380, Nippon Aerosol Co., Ltd. make, bulk silica fine particle) And silica (trade name: SO-C2, manufactured by Admatex Co., Ltd., spherical silica fine particles, average particle diameter 500 nm) were prepared, respectively.

These materials were put into a mixing kneader so as to have a ratio shown in Table 1 at a solid weight ratio, and kneaded, and then subjected to degassing and kneading at 5 Torr or less for 1 hour, for die bonding of Examples 1 to 3 and Comparative Examples 1 to 3 A resin paste was obtained. In addition, the compounding quantity of the carbitol acetate (CA) of Table 1 has shown the quantity of the carbitol acetate contained as a solvent in the polyurethaneimide resin solution and the carbitol acetate solution of an epoxy resin and a phenol resin.

Moreover, as a characteristic of this resin paste, the sticking property (tackiness) after crimping | bonding the resist coating substrate in B-stage state was evaluated. The evaluation method of adhesiveness is as follows. The resin paste produced by the Example and the comparative example was apply | coated to the board | substrate for evaluation, and it heat-dried in 110 degreeC oven for 1 hour, and formed the coating film (die bonding layer) of B stage state. Here, the board | substrate for evaluation apply | coats the soldering resist AUS-308 (made by Dainippon Ink) to an MCL-E679F board | substrate (made by Hitachi Kasei Co., Ltd.). Thereafter, a 10 mm x 12 mm evaluation substrate was pressed on a die bonding layer under a load of 5 kgf on a hotbed at 30 ° C. for 60 seconds. This was made into the up-down reverse phase after crimping, and it observed whether the board | substrate of the crimped side fell. The results are shown in Table 1. In addition, in Table 1, "A" shows that the board | substrate fell without affixing after crimping, and "B" shows that a board | substrate remains affixed after crimping.

Moreover, as a characteristic of this resin paste, the semiconductor chip was crimped | bonded and the hot-die die share intensity | strength at 250 degreeC after paste postcure was investigated. The measuring method of the hot die share strength is as follows. The resin paste produced in the Example and the comparative example was printed on the 42 alloy lead frame, and it dried for 60 minutes in 110 degreeC oven. Thereafter, a 5 x 5 mm silicon chip (thickness of 0.5 mm) was pressed on a resin paste under a load of 5 kgf on a hot plate at 200 ° C for 1 second, and then heated and cured in an oven at 180 ° C for 60 minutes. The shear force (kgf / chip) in 250 degreeC was measured using the automatic adhesive force tester (brand name: serie-4000, the Daisies make). The results are shown in Table 1.

As shown in Table 1, the resin pastes (Examples 1 to 3) of the present invention are sufficiently reduced in tackiness under room temperature conditions after B stage formation, and compared with conventional resin pastes (Comparative Examples 1 to 3). It turned out that conveyance in the state which directly laminated | stacked the board | substrate was possible. Moreover, it turned out that the resin paste of this invention is also high in thermal shear force at 250 degreeC after crimping and post-curing a chip | tip, and having high chip | tip adhesive force and heat resistance compared with the conventional resin paste.

2… Semiconductor chip, 4... Adhesive, 6.. Substrate, 8... Solder ball, 10.. Wire, 12... Sealing resin, 100... Semiconductor device.

Claims (5)

Polyurethane imide resin represented by the following general formula (I), a thermosetting resin, a filler, and a printing solvent are contained,
The resin paste for die bonding whose compounding quantity of the said thermosetting resin is 250-500 weight part with respect to 100 weight part of said polyurethane imide resins.
However,

[Wherein, R ¹ represents a divalent organic group containing an aromatic ring or an aliphatic ring, R ² represents a divalent organic group having a molecular weight of 100 to 10,000, and R ³ represents a tetravalent organic group containing four or more carbon atoms And n and m each independently represent an integer of 1 to 100.] The resin paste for die bonding according to claim 1, wherein the filler contains spherical silica fine particles. An application step of applying the resin paste for die bonding according to claim 1 or 2 onto a substrate to form a coating film;
Semiconductor chip mounting process for mounting a semiconductor chip on the coating film
A manufacturing method of a semiconductor device comprising a. The method of claim 3, further comprising, after the coating step, a drying step of drying the coating film and forming a B stage.
In the semiconductor chip mounting process, a semiconductor chip is mounted on the B-staged coating film. The semiconductor device obtained by the manufacturing method of the semiconductor device of Claim 3 or 4.

Images