200830412 九、發明說明： 【發明所屬之技術領域】 =發^有關於-種除去光罩上的雜f的裝置及方 寸別疋有關於-種除去被薄膜覆蓋的光罩上 的裝置及方法。 貝 【先前技術】200830412 IX. Description of the invention: [Technical field to which the invention pertains] </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> apparatus and method for removing the smear on the reticle. Shell [previous technology]
圖^，就成為可利用的光罩，形成_的光罩若是圖 形中產生缺陷’必須經過光罩雷射修整機（咖一k aserrepa^職hine) _案作修整後，經過清洗並在光 上會覆盖-薄膜（pellicle)以保護光罩上的圖宰，避 損或㈣附著於光罩上㈣響曝光顯影的結 田罩^被，覆蓋了以後，會對光罩做—缺陷檢驗， 看先罩中疋否存在雜質或異物，若僅測出存在會影塑载 f影的異物’則必須拆除薄膜（薄膜拆卸後就益：； =用），經過光罩雷射修整機對清洗過程 ==重新清洗光罩，然後再覆蓋一新的薄膜； ，^出Ά此的過程不僅耗時，同時會增加薄膜 I里，由於薄膜相當昂f，如此也會增加成本，因此 異種不必拆卸薄膜也能清除光罩上的雜質或 【發明内容】 有鑑於此，本發明之目的在於提供一種不必拆卸薄 〇503-A32556TWF/chentf ς 200830412 膜也能清除光罩上的雜質或異物的裝置及方法。 本發明之除去位於被護膜覆蓋之光罩上的雜質的裝 置的一較佳實施例包括一雷射光源、一透鏡組以及一平 台。平台係與透鏡組保持一適當的距離，供容納與放置 該帶有護膜之光罩。從該雷射光源發出的雷射光經過透 鏡組而投射至平台上，且投射至平台的雷射光係穿過護 膜並除去位於光罩上的雜質。 上述較佳實施例更包括一觀測元件，用來觀測光罩 Φ 圖形，該觀測元件可為一光耦合器，觀測元件可藉由穿 過該光罩的汞光源，或者是從該光罩反射的汞光源，而 觀測位於該光罩上的雜質。 在上述較佳實施例中，雷射光源可為脈衝雷射（pulse laser )或連續光波雷射（continuous wave laser )。 在上述較佳實施例中，透鏡組包括複數個透鏡，該 等透鏡的放大倍率均不相同，雷射光係通過該等透鏡其 中之一而投射至平台上。 • 本發明之除去位於被護膜覆蓋之光罩上的雜質的方 法的一較佳實施例，包括下列步驟：提供一雷射光源以 及一平台；將帶有護膜的光罩放置於該平台上；以及使 雷射光從該雷射光源投射至該平台，並穿過該護膜而除 去位於該光罩上的雜質。 上述之較佳實施例更包括下列步驟：提供一透鏡 組，該透鏡組具有複數個透鏡，該等透鏡具有不同的放 大倍率； 0503-A32556TWF/chentf 6 200830412 根據該雜質的尺寸，使該雷射光通過該等透鏡其 而投射至該平台。 提供一觀測元 利用穿過該光 利用從該光罩 上述之較佳貫施例更包括下列步驟 件；利用該觀測元件觀測該光罩。 上述之較佳實施例更包括下列步驟 罩的汞光源而觀測該光罩。 上述之較佳實施例更包括下列步驟 反射的汞光源而觀測該光罩。 更明本發明之上述和其他目的、特徵、和優點能 =易懂，下文特舉一較佳實施例，並配合所附圖示， 作洋細說明如下： 【實施方式】 第1圖為本發明之除去位於被護膜覆蓋之 =的装置’包括-雷射光源、10、機體20、透鏡組 千口 40、光管路50、反射鏡6〇以及觀測元件％。告 已覆盘護膜5的光罩7 Ji :目4 士 ^ # 右，心ΛΛ , 出存在有雜質時’將覆蓋 有版的光罩7放置於平台40上，雷射光從雷射光源 10經過機體2G並藉由透鏡組3G調整照射的範圍之後穿 _膜5而擊中位於光罩7上的雜質，如第2圖所示， f由雷射光的能量將雜質3燃燒絲碎成粒徑更小的顆 一要顆粒的粒徑小於會影響曝光顯影的臨界值以 :都ΤΙ達到要求。由於在光罩7上需要移除雜質的區 域都疋在曝光顯影時的曝光區，因此雷射光在擊中雜質3 〇503-A32556TWF/chentf 7 200830412 光罩,7而進入光管路50中’經由反射鏡6〇反 圖开…^件7G中，藉此可以觀測光罩7的修整後 是否已經被擊滅或擊碎至不致影響 先的心獅。騎錢1G的形式可為脈衝雷射 se laser ) 4 ^ ^ ^ f If ( continuous wave laser ) 〇 同二30包括複數個透鏡’該等透鏡具有不 ffi 同的透鏡可以改變使f射光照射㈣ 選擇==Γ7。所觀測到的雜質粒徑㈣ ,_ 一+良於此，其他的觀測元件 =^_元件7()在本實_中是藉由穿透光^二 水光源以觀測光罩圖形，在 也可以設置於平台4。的上二：罩，7= :、d罩圖形，不同之處在於若觀測時是藉由穿透 先罩7的光源，則光罩圖形㈣光區顯示的是亮區，而 雜質部分顯示為暗區；而若觀測時 罩° :光源，則光罩圖形的曝光區顯示:== =Figure ^, it becomes a reticle that can be used, if the reticle of the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The cover will be covered with a pellicle to protect the stencil on the reticle, to avoid damage or (4) to be attached to the reticle (4) to illuminate and develop the hood cover, and after covering it, the reticle will be tested for defects. Look at the presence of impurities or foreign matter in the first cover. If only the foreign matter that will affect the shadow of the load is detected, the film must be removed (the film is removed after use:; =), and it is cleaned by the reticle laser trimming machine. Process ==Re-cleaning the reticle and then covering a new film; The process of Ά 不仅 is not only time consuming, but also increases the film I. Since the film is quite f, it also increases the cost, so the dissimilarity does not have to be disassembled. The film can also remove impurities on the reticle or [invention] In view of the above, an object of the present invention is to provide a device capable of removing impurities or foreign matter on the reticle without removing the 〇503-A32556TWF/chentf ς 200830412 film. method. A preferred embodiment of the apparatus for removing impurities located on a reticle covered by a film comprises a laser source, a lens group and a platform. The platform is held at an appropriate distance from the lens assembly for receiving and placing the mask with the protective film. The laser light emitted from the laser source is projected onto the stage through the lens assembly, and the laser light projected onto the platform passes through the film and removes impurities located on the mask. The preferred embodiment further includes an observation element for observing the reticle Φ pattern, the observation element being an optocoupler, the observation element being reflective by the mercury source passing through the reticle or reflecting from the reticle Mercury light source while observing impurities located on the reticle. In the preferred embodiment described above, the laser source can be a pulse laser or a continuous wave laser. In the preferred embodiment described above, the lens assembly includes a plurality of lenses, the magnifications of the lenses are all different, and the laser light is projected onto the platform through one of the lenses. A preferred embodiment of the method of the present invention for removing impurities located on a mask covered by a film, comprising the steps of: providing a laser source and a platform; placing a mask with a mask on the platform And projecting laser light from the laser light source to the platform and passing through the protective film to remove impurities located on the photomask. The preferred embodiment described above further includes the steps of: providing a lens group having a plurality of lenses having different magnifications; 0503-A32556TWF/chentf 6 200830412 illuminating the laser light according to the size of the impurity It is projected to the platform by the lenses. Providing an observation element utilizing the light passing through the reticle further includes the following steps; the reticle is observed using the observation element. The preferred embodiment described above further includes the following steps of the mercury source of the cover to observe the mask. The preferred embodiment described above further includes the following steps of reflecting the mercury source to observe the mask. The above and other objects, features, and advantages of the present invention will become more apparent from the following description. The invention removes the device 'covered by the cover film' including the laser light source 10, the body 20, the lens group thousand 40, the light pipe 50, the mirror 6〇, and the observation element %. The reticle of the covered film 5 is covered by the mask 7 Ji: 目4士^# Right, palpitations, when there is impurity, the reticle 7 covering the plate is placed on the platform 40, and the laser light is emitted from the laser source 10 After passing through the body 2G and adjusting the range of the irradiation by the lens group 3G, the film 5 is hit and the impurities located on the mask 7 are hit. As shown in Fig. 2, f is broken into particles by the energy of the laser light. The particle size of the smaller diameter particles is smaller than the critical value that will affect the exposure development: Since the area on the reticle 7 where the impurity needs to be removed is exposed in the exposure area during exposure and development, the laser light hits the impurity 3 〇 503-A32556TWF/chentf 7 200830412 reticle 7 and enters the optical line 50' Through the mirror 6 〇 ... , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The form of riding money 1G can be pulse laser se laser ) 4 ^ ^ ^ f If ( continuous wave laser ) 〇 2 30 includes a plurality of lenses 'The lenses have the same lens as ffi can be changed to make f light illuminate (4) ==Γ7. The observed impurity particle size (4), _ a + is better than this, other observation elements = ^ _ element 7 () in this real _ by penetrating the light ^ two water source to observe the reticle pattern, in Can be set to platform 4. The second two: cover, 7 =:, d cover pattern, the difference is that if the light source penetrating the first cover 7 is observed, the light pattern of the mask image (4) shows a bright area, and the impurity part is displayed as Dark area; if the mask is used to observe the light source, the exposed area of the mask pattern is displayed: == =
分顯示為亮區。 ’、貝口P 光、^ =光罩㈣射，光罩雷射修整機是具有雷射 = 也//將光__The minute is displayed as a bright area. ', Beikou P light, ^ = reticle (four) shot, reticle laser trimmer has laser = also / / will light __
SL45S ^ 光罩表面上的雜質的裝置，以NEC 尘的光罩雷射修整機為例，如第 =雷=的，動模組部份之外，在平台仙上還包^了 了貝城子氣相沈積的模、组，包括一氣體喷頭（娜鄉） 〇503-A32556TWF/chentf 8 200830412 80以及一氣體供給管（gastube) 9〇。雷射光可從氣體噴 頭80的通孔82照射至光罩7,將光罩圖案中多餘的部分 削除，化學氣相沈積的模組則可修補光罩圖案中的缺 P曰。在NEC SL458型的光罩雷射修整機中，由於光罩係 放置於平台40及氣體喷頭8〇之間，其間的空間過於狹 士，無法容納已覆蓋護膜5的光罩7，因此若要置入已覆 蓋護膜5的光罩7，必須將化學氣相沈積的模組（包括^ 體喷頭80以及氣體供給管90)移除，使平台40與透鏡 組30之間具有足夠的空間，以容納已覆蓋護膜5的光罩 7並重新設定機體2〇内的雷射光控制參數。 本發明對於光罩及護膜的形態並無限定 =罩與 Λ 膜均可使用。而雜質的形態包括有機物及：SL45S ^ The device for the impurity on the surface of the mask, taking the NEC dust reticle laser trimming machine as an example, such as the = thunder =, in addition to the moving module part, the platform is also covered with the Beichengzi The vapor deposited molds and groups include a gas jet head (Naxiang) 〇503-A32556TWF/chentf 8 200830412 80 and a gas supply tube (gastube) 9〇. The laser light is irradiated from the through hole 82 of the gas jet 80 to the reticle 7, and the excess portion of the reticle pattern is removed, and the chemical vapor deposited module repairs the defect in the reticle pattern. In the NEC SL458 type reticle laser trimming machine, since the reticle is placed between the platform 40 and the gas jet head 8 ,, the space between them is too narrow to accommodate the reticle 7 covering the protective film 5, so To insert the mask 7 that has covered the film 5, the chemical vapor deposition module (including the body nozzle 80 and the gas supply tube 90) must be removed so that there is sufficient between the platform 40 and the lens group 30. The space is to accommodate the reticle 7 that has covered the membrane 5 and to reset the laser light control parameters in the body 2 〇. The present invention is not limited to the form of the mask and the film. Both the cover and the film can be used. The form of impurities includes organic matter and:
Mos.ncA 光罩表面圖形的材質（如Chr_、 的殘留物或碎屑等。有機物可 夏燃燒而除去，而盔機物志 耵九的月b 物或碎屬，則可藉：雷射圖形的材質的殘留 的極細微雜。射7而被擊碎成粒徑更小 =轉明已以較佳實施例揭露如 精神和範圍内，當可二不脫離本發明之 之保護範圍當視後社^’因此本發明 甲明專利乾圍所界定者為準。 0503-A32556丁 WF/chentf 9 200830412 【圖式簡單說明】 第1圖為本發明之除去位於被護膜覆蓋之光罩上的 雜質的裝置的示意圖。 第2圖表示雷射光穿過護膜而擊中位於光罩上的雜 質的機制。 第3圖為NEC SL458型的光罩雷射修整機的示意圖。 主要元件符號說明】 3〜雜質； 5〜 護膜； 7〜光罩； 10- -雷射光源； 20〜機體； 30- ^透鏡組； 40〜平台； 50- …光管路； 60〜反射鏡； 70〜觀測元件； 80〜氣體喷頭； 90〜氣體供給管Mos.ncA The material of the surface pattern of the mask (such as Chr_, residue or debris, etc.. Organic matter can be burned and removed in summer, and the helmet object is a month of b or a broken object, then you can borrow: laser graphics The residue of the material is extremely fine and fine. The shot 7 is crushed to a smaller particle size. The invention has been disclosed in the preferred embodiment as the spirit and scope, and can be regarded as not departing from the scope of protection of the present invention. Therefore, the definition of the invention is defined by the patent disclosure of the present invention. 0503-A32556 Ding WF/chentf 9 200830412 [Simplified illustration of the drawing] Figure 1 is a view of the present invention for removing the mask covered by the film. Schematic diagram of the device for impurity. Fig. 2 shows the mechanism by which the laser light passes through the film to hit the impurity on the reticle. Fig. 3 is a schematic diagram of the NEC SL458 reticle laser trimming machine. 3~ impurity; 5~ film; 7~ reticle; 10--laser source; 20~ body; 30-^ lens group; 40~ platform; 50-... light pipe; 60~ mirror; Component; 80~ gas nozzle; 90~ gas supply tube
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