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TW200802990A - Light emitting device and method for manufacturing the same - Google Patents

Light emitting device and method for manufacturing the same

Info

Publication number
TW200802990A
TW200802990A TW96116312A TW96116312A TW200802990A TW 200802990 A TW200802990 A TW 200802990A TW 96116312 A TW96116312 A TW 96116312A TW 96116312 A TW96116312 A TW 96116312A TW 200802990 A TW200802990 A TW 200802990A
Authority
TW
Taiwan
Prior art keywords
light emitting
transmitting layer
semiconductor
emitting element
emitting device
Prior art date
Application number
TW96116312A
Other languages
Chinese (zh)
Inventor
Masami Aihara
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Publication of TW200802990A publication Critical patent/TW200802990A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

To reduce loss of a light emitting quantity due to total reflection, by arranging a light transmitting layer having refraction index inclination on the surface of a semiconductor light emitting element in a light emitting device such as a light emitting diode or the like. A semiconductor light emitting element (10) and electrodes (3, 4) mainly composed of Ga-N are arranged on a sapphire substrate (2). On the surface of the semiconductor light emitting element (10), a light transmitting layer (20) is arranged. The light emitting layer (20) is formed by a CVD method. Inside the light transmitting layer (20), oxygen concentration reduces and nitrogen concentration increases toward the semiconductor light emitting element (10). Therefore, the light transmitting layer (20) has a refraction index which becomes smaller as it separates from the semiconductor element (10).
TW96116312A 2006-05-22 2007-05-08 Light emitting device and method for manufacturing the same TW200802990A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006141974A JP2009193975A (en) 2006-05-22 2006-05-22 Light emitting device, and method for manufacturing the same

Publications (1)

Publication Number Publication Date
TW200802990A true TW200802990A (en) 2008-01-01

Family

ID=38723311

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96116312A TW200802990A (en) 2006-05-22 2007-05-08 Light emitting device and method for manufacturing the same

Country Status (3)

Country Link
JP (1) JP2009193975A (en)
TW (1) TW200802990A (en)
WO (1) WO2007136000A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112789737A (en) * 2020-08-13 2021-05-11 厦门三安光电有限公司 Semiconductor light-emitting element and light-emitting device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5211121B2 (en) * 2010-08-06 2013-06-12 株式会社東芝 Manufacturing method of semiconductor light emitting device
WO2014018122A1 (en) * 2012-03-21 2014-01-30 Dow Corning Corporation Method of forming a light emitting diode module
WO2014151034A1 (en) * 2013-03-15 2014-09-25 Glo Ab High index dielectric film to increase extraction efficiency of nanowire leds
JP2015035439A (en) * 2013-08-07 2015-02-19 ルネサスエレクトロニクス株式会社 Optical coupling device and method for manufacturing optical coupling device
TWI636952B (en) 2013-12-13 2018-10-01 瑞典商Ｇｌｏ公司 Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire leds
JP6668608B2 (en) * 2015-04-27 2020-03-18 日亜化学工業株式会社 Light emitting device manufacturing method
JP7011195B2 (en) * 2020-02-27 2022-01-26 日亜化学工業株式会社 Luminescent device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363884A (en) * 1976-11-18 1978-06-07 Seiko Epson Corp Light emitting diode display element
FI941861A (en) * 1993-04-22 1994-10-23 Gold Star Co Inhomogeneous thin films grown by PECVD
JPH0756002A (en) * 1993-08-09 1995-03-03 Shincron:Kk Hard coat layer and its production
JPH07235684A (en) * 1994-02-23 1995-09-05 Hitachi Cable Ltd Solar cell
JP2001192821A (en) * 2000-01-07 2001-07-17 Nippon Sheet Glass Co Ltd Method for depositing film on substrate, and article obtained by the method
JP2001203392A (en) * 2000-01-19 2001-07-27 Matsushita Electric Works Ltd Light-emitting diode
JP2005277181A (en) * 2004-03-25 2005-10-06 Sharp Corp Method for manufacturing semiconductor device
JP4900892B2 (en) * 2004-05-31 2012-03-21 富士フイルム株式会社 Method for producing optical film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112789737A (en) * 2020-08-13 2021-05-11 厦门三安光电有限公司 Semiconductor light-emitting element and light-emitting device

Also Published As

Publication number Publication date
WO2007136000A1 (en) 2007-11-29
JP2009193975A (en) 2009-08-27

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