SG10201608348SA - Method For Impedance Matching Of Plasma Processing Apparatus - Google Patents
Method For Impedance Matching Of Plasma Processing ApparatusInfo
- Publication number
- SG10201608348SA SG10201608348SA SG10201608348SA SG10201608348SA SG10201608348SA SG 10201608348S A SG10201608348S A SG 10201608348SA SG 10201608348S A SG10201608348S A SG 10201608348SA SG 10201608348S A SG10201608348S A SG 10201608348SA SG 10201608348S A SG10201608348S A SG 10201608348SA
- Authority
- SG
- Singapore
- Prior art keywords
- processing apparatus
- plasma processing
- impedance matching
- impedance
- matching
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
- H05H2242/26—Matching networks
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015198314A JP6541540B2 (ja) | 2015-10-06 | 2015-10-06 | プラズマ処理装置のインピーダンス整合のための方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201608348SA true SG10201608348SA (en) | 2017-05-30 |
Family
ID=58448180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201608348SA SG10201608348SA (en) | 2015-10-06 | 2016-10-05 | Method For Impedance Matching Of Plasma Processing Apparatus |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9736921B2 (zh) |
| JP (1) | JP6541540B2 (zh) |
| KR (1) | KR102723939B1 (zh) |
| CN (1) | CN106941067B (zh) |
| SG (1) | SG10201608348SA (zh) |
| TW (1) | TWI711083B (zh) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| JP7209483B2 (ja) * | 2017-10-10 | 2023-01-20 | 東京エレクトロン株式会社 | プラズマ処理装置および測定回路 |
| CN109659215B (zh) | 2017-10-10 | 2021-03-09 | 东京毅力科创株式会社 | 等离子体处理装置和检测电路 |
| EP4231328A1 (en) | 2017-11-17 | 2023-08-23 | AES Global Holdings, Pte. Ltd. | Synchronized pulsing of plasma processing source and substrate bias |
| US11437221B2 (en) | 2017-11-17 | 2022-09-06 | Advanced Energy Industries, Inc. | Spatial monitoring and control of plasma processing environments |
| TWI744566B (zh) | 2017-11-17 | 2021-11-01 | 新加坡商Ａｅｓ全球公司 | 用於在空間域和時間域上控制基板上的電漿處理之系統和方法，及相關的電腦可讀取媒體 |
| TWI767088B (zh) | 2017-11-17 | 2022-06-11 | 新加坡商Ａｅｓ全球公司 | 電漿處理系統，用於調變其中的電源的控制方法及相關的電漿處理控制系統 |
| US10269540B1 (en) * | 2018-01-25 | 2019-04-23 | Advanced Energy Industries, Inc. | Impedance matching system and method of operating the same |
| JP2019186098A (ja) * | 2018-04-12 | 2019-10-24 | 東京エレクトロン株式会社 | プラズマを生成する方法 |
| CN110504149B (zh) | 2018-05-17 | 2022-04-22 | 北京北方华创微电子装备有限公司 | 射频电源的脉冲调制系统及方法 |
| DE102018116637A1 (de) * | 2018-07-10 | 2020-01-16 | TRUMPF Hüttinger GmbH + Co. KG | Leistungsversorgungseinrichtung und Betriebsverfahren hierfür |
| JP7154119B2 (ja) | 2018-12-06 | 2022-10-17 | 東京エレクトロン株式会社 | 制御方法及びプラズマ処理装置 |
| CN111293022B (zh) * | 2018-12-07 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | 脉冲射频等离子体的阻抗匹配方法和装置 |
| JP7603649B2 (ja) | 2019-07-12 | 2024-12-20 | エーイーエス グローバル ホールディングス， プライベート リミテッド | 単一制御型スイッチを伴うバイアス供給装置 |
| US11315757B2 (en) * | 2019-08-13 | 2022-04-26 | Mks Instruments, Inc. | Method and apparatus to enhance sheath formation, evolution and pulse to pulse stability in RF powered plasma applications |
| JP7557267B2 (ja) | 2019-12-27 | 2024-09-27 | 株式会社ダイヘン | インピーダンス調整装置及びインピーダンス調整方法 |
| US12125674B2 (en) | 2020-05-11 | 2024-10-22 | Advanced Energy Industries, Inc. | Surface charge and power feedback and control using a switch mode bias system |
| JP7466377B2 (ja) * | 2020-05-21 | 2024-04-12 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP7479255B2 (ja) * | 2020-09-14 | 2024-05-08 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7479256B2 (ja) * | 2020-09-15 | 2024-05-08 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
| US20240212983A1 (en) * | 2022-12-21 | 2024-06-27 | Advanced Energy Industries, Inc. | Compensation of impedance modulation in a plasma generator by frequency sweep |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03122618A (ja) | 1989-10-05 | 1991-05-24 | Nec Corp | 薄膜二端子素子型アクティブマトリクス液晶表示装置 |
| JP3122618B2 (ja) * | 1996-08-23 | 2001-01-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP4286404B2 (ja) * | 1999-10-15 | 2009-07-01 | 東京エレクトロン株式会社 | 整合器およびプラズマ処理装置 |
| US7794615B2 (en) * | 2005-03-31 | 2010-09-14 | Tokyo Electron Limited | Plasma processing method and apparatus, and autorunning program for variable matching unit |
| JP4887197B2 (ja) * | 2006-12-29 | 2012-02-29 | 株式会社ダイヘン | 高周波装置 |
| JP5484375B2 (ja) * | 2011-02-17 | 2014-05-07 | 三菱電機株式会社 | プラズマ成膜装置及びプラズマ成膜方法 |
| JP5867701B2 (ja) * | 2011-12-15 | 2016-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5808012B2 (ja) * | 2011-12-27 | 2015-11-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US9197196B2 (en) * | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
| JP2013250231A (ja) * | 2012-06-04 | 2013-12-12 | Daihen Corp | 位相差検出装置、位相差検出プログラム及び位相差検出装置を用いたプラズマ処理システム |
| JP6144917B2 (ja) * | 2013-01-17 | 2017-06-07 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理装置の運転方法 |
| KR20150087702A (ko) * | 2014-01-22 | 2015-07-30 | 삼성전자주식회사 | 플라즈마 발생 장치 |
-
2015
- 2015-10-06 JP JP2015198314A patent/JP6541540B2/ja active Active
-
2016
- 2016-09-30 CN CN201610873947.2A patent/CN106941067B/zh active Active
- 2016-10-03 TW TW105131831A patent/TWI711083B/zh active
- 2016-10-04 KR KR1020160127704A patent/KR102723939B1/ko active IP Right Grant
- 2016-10-04 US US15/284,681 patent/US9736921B2/en active Active
- 2016-10-05 SG SG10201608348SA patent/SG10201608348SA/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017073247A (ja) | 2017-04-13 |
| CN106941067B (zh) | 2019-01-15 |
| US9736921B2 (en) | 2017-08-15 |
| TW201719751A (zh) | 2017-06-01 |
| TWI711083B (zh) | 2020-11-21 |
| US20170099723A1 (en) | 2017-04-06 |
| KR20170041142A (ko) | 2017-04-14 |
| CN106941067A (zh) | 2017-07-11 |
| JP6541540B2 (ja) | 2019-07-10 |
| KR102723939B1 (ko) | 2024-10-31 |
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