KR930022595A

KR930022595A - Thin Film Transistor of Liquid Crystal Display

Info

Publication number: KR930022595A
Application number: KR1019920006451A
Authority: KR
Inventors: 박운용
Original assignee: 김광호; 삼성전자 주식회사
Filing date: 1992-04-17
Publication date: 1993-11-24

Abstract

액정표시장치의 박막트랜지스터에 있어서, 절연기판상에 한 방향으로 형성되는 게이트선과, 상기 게이트선의 일측이 연장되어 형성되는 게이트 전극이 있다. 상기 게이트산과 수직하게 형성되어 있는 데이타의 일측을 연장하여 형성되는 소오스전극을 ㅏ자 또는 ㄱ자 형상을 형성하여, 상기 게이트선의 일측이 연장되어 형성되는 게이트전극과 중첩되도록 한다. 이때 상기 데이타선이 게이트전극과 소정부분 중첩되도록 형성되어 소오스전극의 역활을 수행하도록 하기도 한다. 또한 드레인전극을 ㄷ자형으로 형성하였다. 따라서 이 발명은 동일한 면적에 다수개의 박막트랜지스터가 형성되어 동일한 면적에서의 LCD TFT의 W/L을 증가시킬 수 있으므로 TET를 작게 형성하여 LCD의 개구율을 향상시킬 수 있다. 또한 이 발명은 LCD TFT의 게이트선 및 데이타선의 단락이 발생할 경우 쉽게 재생할 수 있어 신뢰성을 향상시킬 수 있다. 또한 이 발명은 LCD TFT의 다수개의 소오스전극 이나 드레인전극중의 어느하나에 단선이 발생하여도 TFT를 재생하여 사용가능하다.In a thin film transistor of a liquid crystal display device, there are a gate line formed in one direction on an insulating substrate, and a gate electrode formed by extending one side of the gate line. A source electrode formed by extending one side of the data vertically formed with the gate acid is formed in a U or L shape so that one side of the gate line is extended to overlap the gate electrode formed. In this case, the data line may be formed to overlap a portion of the gate electrode to serve as a source electrode. Further, the drain electrode was formed in a U shape. Therefore, the present invention can increase the W / L of the LCD TFT in the same area by forming a plurality of thin film transistors in the same area, so that the TET can be made small to improve the aperture ratio of the LCD. In addition, the present invention can be easily reproduced when a short circuit occurs between the gate line and the data line of the LCD TFT, thereby improving reliability. In addition, the present invention can be used by reproducing the TFT even if disconnection occurs in any one of a plurality of source electrodes and drain electrodes of the LCD TFT.

Description

Thin Film Transistor of Liquid Crystal Display

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 이 발명의 일 실시예에 따른 액정표시장치의 박막트랜지스터의 평면도.2 is a plan view of a thin film transistor of a liquid crystal display according to an exemplary embodiment of the present invention.

제3도는 이 발명의 다른 실시예에 따른 액정표시장치의 박막트랜지스터의 평면도.3 is a plan view of a thin film transistor of a liquid crystal display according to another exemplary embodiment of the present invention.

Claims

A gate line formed on a transparent insulating substrate made of glass, a gate electrode prominent by protruding one side of the gate line, a pixel electrode formed on one side of the insulating substrate, and a gate formed on the surface of the structure An insulating film, a semiconductor layer formed to overlap a predetermined portion of the gate line and the gate electrode, a data line formed perpendicular to the gate line, a source electrode on which one side of the data line protrudes in a predetermined shape, and And a drain electrode formed in a U-shape to overlap a predetermined portion of the gate electrode and not overlapping the protruding source electrode, and having a drain electrode connected to the pixel electrode.

The thin film transistor of claim 1, wherein the data line overlaps the gate electrode.

The thin film transistor of claim 1, wherein the thin film transistor of the liquid crystal display is formed to protrude in a L shape on the source electrode data line.

The thin film transistor of claim 1, wherein the source electrode is formed to protrude from the data line to form a letter.

※ Note: The disclosure is based on the initial application.