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KR930001010A - 방사선-감수성 설폰산 에스테르 및 이의 용도 - Google Patents

방사선-감수성 설폰산 에스테르 및 이의 용도 Download PDF

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KR930001010A
KR930001010A KR1019920010563A KR920010563A KR930001010A KR 930001010 A KR930001010 A KR 930001010A KR 1019920010563 A KR1019920010563 A KR 1019920010563A KR 920010563 A KR920010563 A KR 920010563A KR 930001010 A KR930001010 A KR 930001010A
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radiation
sensitive
mixture
weight
compound
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KR1019920010563A
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파울로우스키 게오르크
로에쉐르트 호르스트
슈피스 발터
프르치빌라 클라우스-위르겐
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칼-헤르만 메이어-둘호이어, 베른하르트 엠. 벡크
훽스트 아크티엔게젤샤프트
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Publication of KR930001010A publication Critical patent/KR930001010A/ko

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D251/00Heterocyclic compounds containing 1,3,5-triazine rings
    • C07D251/02Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings
    • C07D251/12Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members
    • C07D251/14Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members with hydrogen or carbon atoms directly attached to at least one ring carbon atom
    • C07D251/24Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members with hydrogen or carbon atoms directly attached to at least one ring carbon atom to three ring carbon atoms
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D161/00Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
    • C09D161/04Condensation polymers of aldehydes or ketones with phenols only
    • C09D161/06Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04Condensation polymers of aldehydes or ketones with phenols only
    • C08L61/06Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/20Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • C08L61/26Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with heterocyclic compounds
    • C08L61/28Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with heterocyclic compounds with melamine
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/111Polymer of unsaturated acid or ester
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/12Nitrogen compound containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/122Sulfur compound containing
    • Y10S430/123Sulfur in heterocyclic ring

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

내용없음

Description

방사선-감수성 설폰산 에스테르 및 이의 용도
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (13)

  1. 일반식 R--SO3H 또는 R´(SO3H)2설폰산에 2,4-비스트리클로로메틸-6-(모노-또는 디하이드록시페닐)-1,3,5-트리아진과이 에스테르화된, 일반식(Ⅰ) 및/또는 (Ⅱ)의 방사선-감수성 설폰산 에스테르:
    상기 식에서, R은 임의로 추가 치환된 (C1-C10) 알킬, (C5-C10) 사이클로알킬, (C6-C10)아릴, (C6-C10)-아릴 - (C1-C10) 알킬 또는 (C3-C9) 헤테로아릴 라디칼이고, R'은 임의로 치환된 (C1-C10) 알킬렌, (C6-C10)아릴렌 또는 (C3-C9) 헤테로아릴렌 라디칼이며, n은 1 또는 2일 수 있다.
  2. 제1항에 있어서, 일반식(Ⅰ) 2,4-비스트리클로로메틸-6-디하이드록시페닐-1,3,5-트리아진이 일반식 R-SO3H의 설폰산과 완전히 에스테르화된 설폰산 에스테르.
  3. 제1항 또는 제2항에 있어서, 라디칼 R이 (C1-C8)알킬, (C1-C8)알콕시, (C1-C8)알카노일, (C1-C8)알카노일옥시, (C6-C10) 아릴, 시아노 또는 할로겐중에서 하나 이상에 의해 치환체에 의해 치환된 설폰산 에스테르.
  4. (a)화학 방사선에 노출시에 강산을 생성하며, 제1항 내지 제3항 중의 어느 한 항에서 청구된 설폰산 에스테르인 화합물, (b) 두개 이상의 산-가교결합성 그룹을 함유하는 화합물, 및 (c) 알칼리성 수용액중에서 가용성이거나 적어도 팽윤성인 수-불용성 중합성 결합제를 함유하는, 네가티브하게 작용하는 방사선-감수성 혼합물.
  5. 제4항에 있어서, 화합물 (a)의 비율이 혼합물중의 전체 고체 중량에 대해 0.25 내지 15 중량%, 바람직하게는 0.5 내지 5 중량%인, 네가티브하게 작용하는 방사선-감수성 혼합물.
  6. 제4항 또는 5항에 있어서, 화합물 (b)가 레졸인, 네가티브하게 작용하는 방사선-감수성 혼합물.
  7. 제4항 내지 제6항 중의 어느 한 항에 있어서, 화합물 (b)알콕시메틸 도는 옥시라닐메틸 그룹에 의해 치환된 방향족 화합물인, 네가티브하게 작용하는 방사선-감수성 혼합물.
  8. 제4항 내지 제7항 중의 어느 한 항에 있어서, 화합물 (b)가 멜라민/포름알데히드 또는 우레아/포름알데히드 축합 생성물인, 네가티브하게 작용하는 방사선-감수성 혼합물.
  9. 제4항 내지 제8항 중의 어느 한 항에 있어서, 두개 이상의 산-가교결합성 그룹을 함유하는 화합물(b)의 비율이 방사선-감수성 층 중의 전체 고체 중량에 대해 1 내지 50중량%, 바람직하게는 5 내지 25 중량%인, 네가티브하게 작용하는 방사선-감수성 혼합물.
  10. 제4항 내지 제9항 중의 어느 한 항에 있어서, 결합체(c)가 페놀성 하이드록실 그룹을 함유하는 네가티브하게 작용하는 방사선-감수성 혼합물.
  11. 제4항 내지 제10항 중의 어느 한 항에 있어서, 결합체(c)가 248nm파장의 방사선에 대해 0.5㎛-1미만, 바람직하게 0.3㎛-1미만의 흡광도를 갖는, 네가티브하게 작용하는 방사선-감수성 혼합물.
  12. 제4항 내지 제11항 중의 어느 한 항에 있어서, 결합체(c)의 비율이 혼합물 중의 전체 고체 중량에 대해 40 내지 95 중량%, 바람직하게는 50 내지 90중량%인, 네가티브하게 작용하는 방사선-감수성 혼합물.
  13. 필수적으로 기제 및 방사선-감수성 층으로 이루어지고, 여기에서 층은 제4항 내지 제12항 중의 어느 한 항에서 청구된 방사선-경화성 혼합물을 함유하는, 네가티브하게 작용하는 방사선-감수성 기록재.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019920010563A 1991-06-19 1992-06-18 방사선-감수성 설폰산 에스테르 및 이의 용도 KR930001010A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP4120174.4 1991-06-19
DE4120174A DE4120174A1 (de) 1991-06-19 1991-06-19 Strahlungsempfindliche sulfonsaeureester und deren verwendung

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KR930001010A true KR930001010A (ko) 1993-01-16

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US (2) US5298364A (ko)
EP (1) EP0519298B1 (ko)
JP (1) JP3133152B2 (ko)
KR (1) KR930001010A (ko)
DE (2) DE4120174A1 (ko)

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KR101589835B1 (ko) * 2014-12-15 2016-01-29 강릉원주대학교산학협력단 실리콘-망간 합금 및 이의 제조방법

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JP3998105B2 (ja) * 1998-02-04 2007-10-24 東京応化工業株式会社 化学増幅型ネガ型レジスト組成物及びそれを用いたパターン形成方法
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Publication number Priority date Publication date Assignee Title
KR101589835B1 (ko) * 2014-12-15 2016-01-29 강릉원주대학교산학협력단 실리콘-망간 합금 및 이의 제조방법

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JP3133152B2 (ja) 2001-02-05
DE59203640D1 (de) 1995-10-19
US5442061A (en) 1995-08-15
US5298364A (en) 1994-03-29
EP0519298B1 (de) 1995-09-13
DE4120174A1 (de) 1992-12-24
JPH06180502A (ja) 1994-06-28
EP0519298A1 (de) 1992-12-23

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