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KR940009754A - 화학적으로 강화된 네가티브 포토레지스트 - Google Patents

화학적으로 강화된 네가티브 포토레지스트 Download PDF

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Publication number
KR940009754A
KR940009754A KR1019930022582A KR930022582A KR940009754A KR 940009754 A KR940009754 A KR 940009754A KR 1019930022582 A KR1019930022582 A KR 1019930022582A KR 930022582 A KR930022582 A KR 930022582A KR 940009754 A KR940009754 A KR 940009754A
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KR
South Korea
Prior art keywords
radicals
carbon atoms
compound
photoresist
weight
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KR1019930022582A
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English (en)
Inventor
뮌첼 노르베르트
슐츠 라인하르트
홀츠바르트 하인츠
Original Assignee
알. 슐츠, 피. 루돌프
오씨지 마이크로엘렉트로닉 머티리얼즈 아게
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Application filed by 알. 슐츠, 피. 루돌프, 오씨지 마이크로엘렉트로닉 머티리얼즈 아게 filed Critical 알. 슐츠, 피. 루돌프
Publication of KR940009754A publication Critical patent/KR940009754A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

본 발명은 수성 알카리성 매질에서 현상될 수 있고 또 복사선 민감성 산 발생제; 및 산 존재하에 수성 알칼리성 용액중에서 레지스트의 용해도를 감소시키는 화합물; 및 하기 일반식(Ⅰ)의 폴리히드록시 화합물을 함유하는 화학적으로 강화된 네가티브 포토레지스트에 관한 것이다.
상기식에서, n은 2 내지 6의 정수이고, R은 수소, 할로겐, C1-C4알콕시, 또는 C1-C4알킬이고, 또 Z는 비치환 또는 히드록시, 할로겐 및 C1-C4알콕시로 구성된 군으로부터 선정된 한 개 이상의 치환기에 의해 치환된 n-가 라디칼로서, a) 1 내지 12개 탄소원자를 갖는 지방족 라디칼, b) 5 내지 20개의 탄소원자를 갖는 시클로지방족 라디칼, c) 6 내지 20개의 탄소원자를 갖는 방향족 라디칼 및 d) 지방족, 시클로지방족 또는 방향족 기로부터 선정된 2개의 상이한 구조적 단위체를 포함하는 7 내지 30개 탄소원자를 갖는 라디칼로 구성된 군으로부터 선정됨. 상술한 레지스트는 상형성 방향으로 노출되는 동안 초점 정확도에 대한 요건을 경감시킬 수 있다.

Description

화학적으로 강화된 네가티브 포토레지스트
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (8)

  1. 수성 알칼리성 매질에서 현상될 수 있고 또 복사선 민감성 산 발생제, 및 산 존재하에 수성 알칼리성 용액중에서 레지스트의 용해도를 감소시키는 화합물, 및 하기 일반식(Ⅰ)의 폴리히드록시 화합물을 함유하는 화학적으로 강화된 네가티브 포토레지스트.
    상기식에서, n은 2 내지 6의 정수이고, R은 수소, 할로겐, C1-C4알콕시 또는 C1-C4알킬이고 또 Z은 비치환 또는 히드록시, 할로겐 및 C1-C4할콕시로 구성된 군으로부터 선정된 한 개 이상의 치환기에 의해 치환된 n-가 라디칼로서, a) 1 내지 12개 탄소원자를 갖는 지방족 라디칼, b) 5 내지 20개의 탄소원자를 갖는 시클로지방족 라디칼, c) 6 내지 20개의 탄소원자를 갖는 방향족 라디칼 및 d) 지방족, 시클로지방족 또는 방향족 기로부터 선정된 2개의 상이한 구조적 단위체를 포함하는 7 내지 30개 탄소원자를 갖는 라디칼로 구성된 군으로부터 선정됨.
  2. 제1항에 있어서, 일반식(Ⅰ)중의 n이 3 또는 4인 포토레지스트.
  3. 제1항에 있어서, 일반식(Ⅰ)중의 R이 수소인 포토레지스트.
  4. 제1항에 있어서, 일반식(Ⅰ)중의 화합물이 하기 구조식을 갖는 포토레지스트.
  5. 제4항에 있어서, 하기 일반식(Ⅲ)의 화합물을 함유하는 포토레지스트.
  6. 제1항에 있어서, 레지스트의 고형분 함량을 기준하여 5 내지 30중량%의 일반식 (Ⅰ)의 화합물을 함유하는 포토레지스트.
  7. 제6항에 있어서, 결합제로서 페놀성 수지, 바람직하게는 노볼락 또는 폴리비닐페놀 40 내지 87중량%, 고도로 순수하거나 또는 공업용 형태인 N-메톡시메틸멜라민, 테트라메톡시메틸글리콜우릴 및 N,N′-디메톡시메틸우론으로부터 선정된 가교제 5 내지 25중량%, 조사되면 술폰산 또는 할로겐산을 형성하는 화합물 0.1 내지 10중량% 및 1,1,2.2-테트라키스(4-히드록시페닐)에탄, 1,2,2,3-테트라키스(4-히드록시페닐)프로판, 1,3,3,5-테트라키스(4-히드록시페닐)펜탄 및 하기 일반식(Ⅱ)의 화합물로 구성된 군으로부터 선정된 폴리히드록시 화합물 5 내지 25중량%를 포함하는 포토레지스트:
  8. 1) 상술한 포토레지스트를 포함하는 코팅을 기판위에 제조하고; 2) 코팅된 기판을 프로젝트 노출법에 의해 상형성 방향으로 노출시키고; 필요에 따라 가온시키며; 또 3) 수성 알칼리성 현상제를 사용하여 현상시키는 단계를 포함하는 상 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930022582A 1992-10-29 1993-10-26 화학적으로 강화된 네가티브 포토레지스트 KR940009754A (ko)

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CH92-7/3369 1992-10-29
CH336992 1992-10-29

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KR940009754A true KR940009754A (ko) 1994-05-24

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US (1) US5650262A (ko)
EP (1) EP0599779A1 (ko)
JP (1) JPH06214388A (ko)
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JPH06214388A (ja) 1994-08-05
US5650262A (en) 1997-07-22
EP0599779A1 (de) 1994-06-01

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