KR20190030482A - Display device using semiconductor light emitting device and method for manufacturing - Google Patents

Abstract

According to the present invention, a display device comprises: a substrate on which wiring electrodes are formed; a plurality of semiconductor light emitting elements electrically connected to the wiring electrodes; a plurality of fluorescent layers arranged to convert the wavelength of light and to cover at least a part of the plurality of semiconductor light emitting elements; and a plurality of partition wall parts disposed between the plurality of fluorescent layers, and having a plurality of light transmitting layers made of a light transmitting material and a plurality of reflective layers configured to reflect light. The light transmitting layers are disposed to surround the reflective layers.

Description

TECHNICAL FIELD [0001] The present invention relates to a display device using a semiconductor light emitting device and a method of manufacturing the same,

The present invention relates to a display device and a method of manufacturing the same, and more particularly to a flexible display device using a semiconductor light emitting element.

In recent years, display devices having excellent characteristics such as a thin shape and a flexible shape in the field of display technology have been developed. On the other hand, major displays that are commercialized today are represented by LCD (Liguid Crystal Display) and AMOLED (Active Matrix Organic Light Emitting Diodes).

However, in the case of LCD, there is a problem that the reaction time is not fast and the implementation of flexible is difficult. In the case of AMOLED, there is a weak point that the lifetime is short, the mass production yield is not good, and the degree of flexible is weak.

Light emitting diodes (LEDs) are well-known semiconductor light emitting devices that convert current into light. In 1962, red LEDs using GaAsP compound semiconductors were commercialized, Has been used as a light source for a display image of an electronic device including a communication device. Accordingly, a method of solving the above problems by implementing a flexible display using the semiconductor light emitting device can be presented.

A structure for exciting light emitted from the semiconductor light emitting device using a phosphor layer may be applied to the flexible display using the semiconductor light emitting device. In this case, a barrier structure for preventing color mixing may be provided in the phosphor layer, but the research on the phosphor layer is insufficient. Particularly, when a high-quality display is realized by using a semiconductor light-emitting device, the semiconductor light-emitting device must be small, but it is limited. In order to solve such a problem, a pentile display drive can be utilized for a display using a semiconductor light emitting device, but there is no research on the barrier structure related to the display. Therefore, the present invention proposes a new type of barrier structure.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a display device having a new type of barrier rib structure capable of improving luminance and a method of manufacturing the same.

A display device having a barrier rib structure capable of being flexible and capable of preventing color mixing, and a method of manufacturing the same.

A display device according to the present invention is a display device including a substrate on which wiring electrodes are formed, a plurality of semiconductor light emitting elements electrically connected to the wiring electrodes, a plurality of semiconductor light emitting elements for converting wavelengths of light and covering at least a part of the plurality of semiconductor light emitting elements And a plurality of barrier ribs disposed between the plurality of phosphor layers, wherein the plurality of barrier ribs have a plurality of light-transmitting layers composed of a light-transmitting material and a plurality of reflection layers configured to reflect light, And the light transmitting layers are arranged to surround the reflective layers.

In one embodiment, the reflective layer may be filled between two different light transmitting layers.

In one embodiment, the reflective layer is disposed between the semiconductor light emitting elements and may be spaced apart from the at least one semiconductor light emitting element by a predetermined distance.

In one embodiment, the reflective layer is disposed to surround at least one of the phosphor layers, and may be disposed at a predetermined distance from at least one of the phosphor layers.

In one embodiment, some of the light-transmitting layers overlap with some of the semiconductor light-emitting elements, and another part of the light-transmitting layers may be disposed between the semiconductor light-emitting elements.

In one embodiment, the light transmitting layers include a first light transmitting layer disposed to overlap with a part of the semiconductor light emitting elements, a second light transmitting layer disposed between the semiconductor light emitting elements, And a third light transmitting layer disposed on the second light transmitting layer.

In one embodiment, the reflective layers may be disposed between the first light-transmitting layer and the third light-transmitting layer.

In one embodiment, it may be disposed between the second light-transmitting layer and the third light-transmitting layer.

In an exemplary embodiment, the reflective layer may include a protrusion extending from the upper side of the reflective layer toward the semiconductor light emitting device.

In one embodiment, the protrusion may be formed to cover a part of the light-transmitting layer surrounding the reflective layer.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor light emitting device, including: bonding a plurality of semiconductor light emitting devices to an adhesive layer formed on a substrate; covering the semiconductor light emitting devices; applying a light transmitting material; etching a part of the light transmitting material; Forming a reflective layer by filling a reflective material between the plurality of light transmitting layers, and forming phosphor layers disposed to cover at least a part of the plurality of semiconductor light emitting elements, wherein the reflective layer Wherein the plurality of semiconductor light emitting devices are formed between the plurality of semiconductor light emitting devices.

In one embodiment, in the step of etching a portion of the light-transmitting material, the light-transmitting material covering at least one of the semiconductor light-emitting devices may not be etched.

In the display device according to the present invention, the reflective layers provided on the barrier ribs reflect the light directed toward the display device side upward. Thus, the brightness of the display device is improved.

Also, in the present invention, a reflective layer is formed by filling a plurality of light-transmitting layers with a reflective material. That is, a plurality of light-transmitting layers are utilized as a support layer for the reflective layer. Thus, the reflective layer can be formed at a predetermined height or higher.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.
Fig. 2 is a partially enlarged view of part A of Fig. 1, and Figs. 3a and 3b are cross-sectional views taken along line BB and CC of Fig.
4 is a conceptual diagram showing a flip chip type semiconductor light emitting device of FIG.
FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.
6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.
7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention.
8 is a cross-sectional view taken along line DD of FIG.
9 is a conceptual diagram showing a vertical semiconductor light emitting device of FIG.
Fig. 10 is an enlarged view of a portion A in Fig. 1 for explaining another embodiment of the present invention to which a semiconductor light emitting element having a new structure is applied.
11A is a cross-sectional view taken along line EE in Fig.
11B is a cross-sectional view taken along the line FF of FIG.
12 is a conceptual diagram showing the flip chip type semiconductor light emitting device of Fig. 11A.
13 is an enlarged view of a portion A in Fig. 1 for explaining another embodiment of the present invention.
14 is a cross-sectional view taken along line GG in Fig.
15 is a cross-sectional view taken along the line HH in Fig.
16 is a cross-sectional view taken along line I-I in Fig.
FIG. 17 is a view for explaining a modified embodiment of FIG. 13; FIG.
18A, 18B, 18C, 19A, 19B, 19C and 19D are cross-sectional views illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals are used to designate identical or similar elements, and redundant description thereof will be omitted. The suffix "module" and " part "for the components used in the following description are given or mixed in consideration of ease of specification, and do not have their own meaning or role. In the following description of the embodiments of the present invention, a detailed description of related arts will be omitted when it is determined that the gist of the embodiments disclosed herein may be blurred. In addition, it should be noted that the attached drawings are only for easy understanding of the embodiments disclosed in the present specification, and should not be construed as limiting the technical idea disclosed in the present specification by the attached drawings.

It is also to be understood that when an element such as a layer, region or substrate is referred to as being present on another element "on," it is understood that it may be directly on the other element or there may be an intermediate element in between There will be.

The display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation device, a slate PC, , A Tablet PC, an Ultra Book, a digital TV, a desktop computer, and the like. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiments described herein may be applied to a device capable of being displayed, even in the form of a new product to be developed in the future.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.

According to the illustrated example, the information processed in the control unit of the display device 100 may be displayed using a flexible display.

The flexible display includes a display that can be bent, twistable, collapsible, and curlable, which can be bent by an external force. For example, a flexible display can be a display made on a thin, flexible substrate that can be bent, bent, folded or rolled like paper while maintaining the display characteristics of conventional flat panel displays.

In a state where the flexible display is not bent (for example, a state having an infinite radius of curvature, hereinafter referred to as a first state), the display area of the flexible display is flat. In the first state, the display area may be a curved surface in a state of being bent by an external force (for example, a state having a finite radius of curvature, hereinafter referred to as a second state). As shown in the figure, the information displayed in the second state may be time information output on the curved surface. Such visual information is realized by independently controlling the emission of a sub-pixel arranged in a matrix form. The unit pixel means a minimum unit for implementing one color.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is exemplified as one type of semiconductor light emitting device for converting a current into light. The light emitting diode is formed in a small size, so that it can serve as a unit pixel even in the second state.

Hereinafter, a flexible display implemented using the light emitting diode will be described in detail with reference to the drawings.

FIG. 2 is a partial enlarged view of a portion A of FIG. 1, FIGS. 3 A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2, FIG. 4 is a conceptual view of a flip chip type semiconductor light emitting device of FIG. FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.

Referring to FIGS. 2, 3A and 3B, a display device 100 using a passive matrix (PM) semiconductor light emitting device as a display device 100 using a semiconductor light emitting device is illustrated. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device 100 includes a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and a plurality of semiconductor light emitting devices 150.

The substrate 110 may be a flexible substrate. For example, to implement a flexible display device, the substrate 110 may comprise glass or polyimide (PI). In addition, any insulating material such as PEN (polyethylene naphthalate) and PET (polyethylene terephthalate) may be used as long as it is insulating and flexible. In addition, the substrate 110 may be either a transparent material or an opaque material.

The substrate 110 may be a wiring substrate on which the first electrode 120 is disposed, so that the first electrode 120 may be positioned on the substrate 110.

The insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is located and the auxiliary electrode 170 may be disposed on the insulating layer 160. In this case, a state in which the insulating layer 160 is laminated on the substrate 110 may be one wiring substrate. More specifically, the insulating layer 160 is formed of a flexible material such as polyimide (PI), polyimide (PET), or PEN, and is integrally formed with the substrate 110 to form a single substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150 and is disposed on the insulating layer 160 and corresponds to the position of the first electrode 120. For example, the auxiliary electrode 170 may be in the form of a dot and may be electrically connected to the first electrode 120 by an electrode hole 171 passing through the insulating layer 160. The electrode hole 171 may be formed by filling a via hole with a conductive material.

Referring to these drawings, the conductive adhesive layer 130 is formed on one surface of the insulating layer 160, but the present invention is not limited thereto. For example, a layer having a specific function may be formed between the insulating layer 160 and the conductive adhesive layer 130, or a structure in which the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160 It is also possible. In the structure in which the conductive adhesive layer 130 is disposed on the substrate 110, the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity. To this end, the conductive adhesive layer 130 may be mixed with a substance having conductivity and a substance having adhesiveness. Also, the conductive adhesive layer 130 has ductility, thereby enabling the flexible function in the display device.

As an example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 may be formed as a layer having electrical insulation in the horizontal X-Y direction while permitting electrical interconnection in the Z direction passing through the thickness. Accordingly, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (hereinafter, referred to as a conductive adhesive layer).

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member. When heat and pressure are applied, only a specific part of the anisotropic conductive film has conductivity due to the anisotropic conductive medium. Hereinafter, the anisotropic conductive film is described as being subjected to heat and pressure, but other methods may be used to partially conduct the anisotropic conductive film. In this method, for example, either the heat or the pressure may be applied, or UV curing may be performed.

In addition, the anisotropic conduction medium can be, for example, a conductive ball or a conductive particle. According to the example, in the present example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member. When heat and pressure are applied, only specific portions are conductive by the conductive balls. The anisotropic conductive film may be a state in which a plurality of particles coated with an insulating film made of a polymer material are contained in the core of the conductive material. In this case, the insulating film is broken by heat and pressure, . At this time, the shape of the core may be deformed to form a layer in contact with each other in the thickness direction of the film. As a more specific example, heat and pressure are applied to the anisotropic conductive film as a whole, and the electrical connection in the Z-axis direction is partially formed by the height difference of the mating member adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may be in a state in which a plurality of particles coated with a conductive material are contained in the insulating core. In this case, the conductive material is deformed (pressed) to the portion where the heat and the pressure are applied, so that the conductive material becomes conductive in the thickness direction of the film. As another example, it is possible that the conductive material penetrates the insulating base member in the Z-axis direction and has conductivity in the thickness direction of the film. In this case, the conductive material may have a pointed end.

According to the present invention, the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one surface of an insulating base member. More specifically, the insulating base member is formed of a material having adhesiveness, and the conductive ball is concentrated on the bottom portion of the insulating base member, and is deformed together with the conductive ball when heat and pressure are applied to the base member So that they have conductivity in the vertical direction.

However, the present invention is not limited thereto. The anisotropic conductive film may be formed by randomly mixing conductive balls into an insulating base member or by forming a plurality of layers in which a conductive ball is placed in a double- ACF) are all available.

The anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which a conductive ball is mixed with an insulating and adhesive base material. In addition, solutions containing conductive particles can be solutions in the form of conductive particles or nanoparticles.

Referring again to FIG. 5, the second electrode 140 is located in the insulating layer 160, away from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed.

After the conductive adhesive layer 130 is formed in a state where the auxiliary electrode 170 and the second electrode 140 are positioned in the insulating layer 160, the semiconductor light emitting device 150 is connected to the semiconductor light emitting device 150 in a flip chip form The semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140.

Referring to FIG. 4, the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type semiconductor layer 155 in which a p-type electrode 156, a p-type electrode 156 are formed, an active layer 154 formed on the p-type semiconductor layer 155, And an n-type electrode 152 disposed on the n-type semiconductor layer 153 and the p-type electrode 156 on the n-type semiconductor layer 153 and 154 in the horizontal direction. In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 by the conductive adhesive layer 130, and the n-type electrode 152 may be electrically connected to the second electrode 140.

Referring again to FIGS. 2, 3A and 3B, the auxiliary electrode 170 is elongated in one direction, and one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150. For example, the p-type electrodes of the right and left semiconductor light emitting elements may be electrically connected to one auxiliary electrode around the auxiliary electrode.

More specifically, the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 by heat and pressure, and the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 through the p- And only the portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 has conductivity and the semiconductor light emitting device does not have a conductive property because the semiconductor light emitting device is not press- The conductive adhesive layer 130 not only couples the semiconductor light emitting device 150 and the auxiliary electrode 170 and the semiconductor light emitting device 150 and the second electrode 140 but also forms an electrical connection.

In addition, the plurality of semiconductor light emitting devices 150 constitute a light emitting element array, and the phosphor layer 180 is formed in the light emitting element array.

The light emitting element array may include a plurality of semiconductor light emitting elements having different brightness values. Each of the semiconductor light emitting devices 150 constitutes a unit pixel and is electrically connected to the first electrode 120. For example, the first electrodes 120 may be a plurality of semiconductor light emitting devices, and the semiconductor light emitting devices may be electrically connected to any one of the plurality of first electrodes.

Also, since the semiconductor light emitting devices are connected in a flip chip form, the semiconductor light emitting devices grown on the transparent dielectric substrate can be used. The semiconductor light emitting devices may be, for example, a nitride semiconductor light emitting device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size.

According to the structure, the barrier ribs 190 may be formed between the semiconductor light emitting devices 150. In this case, the barrier ribs 190 may separate the individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130. For example, by inserting the semiconductor light emitting device 150 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier 190 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, the barrier ribs 190 may be provided separately from the reflective barrier ribs. In this case, the barrier rib 190 may include a black or white insulation depending on the purpose of the display device. When a barrier of a white insulator is used, an effect of enhancing reflectivity may be obtained. When a barrier of a black insulator is used, a contrast characteristic may be increased while having a reflection characteristic.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 180 converts the blue (B) light into the color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting an individual pixel.

That is, a red phosphor 181 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 151 at a position forming a red unit pixel, A green phosphor 182 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 151. [ In addition, only the blue semiconductor light emitting element 151 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel. More specifically, phosphors of one color may be stacked along each line of the first electrode 120. Accordingly, one line in the first electrode 120 may be an electrode for controlling one color. In other words, red (R), green (G), and blue (B) may be arranged in order along the second electrode 140, thereby realizing a unit pixel.

(R), green (G), and blue (B) unit pixels may be implemented by combining the semiconductor light emitting device 150 and the quantum dot QD instead of the fluorescent material. have.

In addition, a black matrix 191 may be disposed between each of the phosphor layers to improve contrast. That is, the black matrix 191 can improve the contrast of light and dark.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied.

5A, each of the semiconductor light emitting devices 150 includes gallium nitride (GaN), indium (In) and / or aluminum (Al) are added together to form a high output light Device.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a unit pixel (sub-pixel), respectively. For example, red, green, and blue semiconductor light emitting elements R, G, and B are alternately arranged, and red, green, and blue unit pixels Form a single pixel, through which a full color display can be implemented.

Referring to FIG. 5B, the semiconductor light emitting device may include a white light emitting device W having a yellow phosphor layer for each individual device. In this case, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the white light emitting element W to form a unit pixel. Further, a unit pixel can be formed by using a color filter in which red, green, and blue are repeated on the white light emitting element W.

Referring to FIG. 5C, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the ultraviolet light emitting element UV. As described above, the semiconductor light emitting device can be used not only for visible light but also for ultraviolet (UV), and can be extended to a form of a semiconductor light emitting device in which ultraviolet (UV) can be used as an excitation source of the upper phosphor .

The semiconductor light emitting device 150 is disposed on the conductive adhesive layer 130 and constitutes a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 150 may be 80 mu m or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

Also, even if a square semiconductor light emitting device 150 having a length of 10 m on one side is used as a unit pixel, sufficient brightness for forming a display device appears. Accordingly, when the unit pixel is a rectangular pixel having a side of 600 mu m and the other side of 300 mu m as an example, the distance of the semiconductor light emitting element becomes relatively large. Accordingly, in such a case, it becomes possible to implement a flexible display device having HD picture quality.

The display device using the semiconductor light emitting device described above can be manufactured by a novel manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG.

6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.

The conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed. A first electrode 120, an auxiliary electrode 170, and a second electrode 140 are formed on the wiring substrate, and the insulating layer 160 is formed on the first substrate 110 to form a single substrate (or a wiring substrate) . In this case, the first electrode 120 and the second electrode 140 may be arranged in mutually orthogonal directions. In addition, the first substrate 110 and the insulating layer 160 may include glass or polyimide (PI), respectively, in order to implement a flexible display device.

The conductive adhesive layer 130 may be formed, for example, by an anisotropic conductive film, and an anisotropic conductive film may be applied to the substrate on which the insulating layer 160 is disposed.

A second substrate 112 corresponding to the positions of the auxiliary electrode 170 and the second electrodes 140 and having a plurality of semiconductor light emitting elements 150 constituting individual pixels is disposed on the semiconductor light emitting element 150 Are arranged so as to face the auxiliary electrode 170 and the second electrode 140.

In this case, the second substrate 112 is a growth substrate for growing the semiconductor light emitting device 150, and may be a spire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in units of wafers, the semiconductor light emitting device can be effectively used in a display device by having an interval and a size at which a display device can be formed.

Then, the wiring substrate and the second substrate 112 are thermally bonded. For example, the wiring board and the second substrate 112 may be thermocompression-bonded using an ACF press head. The wiring substrate and the second substrate 112 are bonded by the thermocompression bonding. Only the portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity due to the characteristics of the anisotropic conductive film having conductivity by thermocompression, The device 150 may be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, and partition walls may be formed between the semiconductor light emitting devices 150.

Then, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO).

Finally, the second substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating a wiring substrate on which the semiconductor light emitting device 150 is coupled with silicon oxide (SiOx) or the like.

Further, the method may further include forming a phosphor layer on one surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red phosphor or a green phosphor for converting the blue (B) A layer can be formed on one surface of the device.

The manufacturing method and structure of the display device using the semiconductor light emitting device described above can be modified into various forms. For example, a vertical semiconductor light emitting device may be applied to the display device described above. Hereinafter, the vertical structure will be described with reference to Figs. 5 and 6. Fig.

In the modifications or embodiments described below, the same or similar reference numerals are given to the same or similar components as those of the previous example, and the description is replaced with the first explanation.

8 is a cross-sectional view taken along the line DD of FIG. 7, and FIG. 9 is a conceptual view illustrating a vertical semiconductor light emitting device of FIG. 8. FIG. 7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, to be.

Referring to these drawings, the display device may be a display device using a passive matrix (PM) vertical semiconductor light emitting device.

The display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and a plurality of semiconductor light emitting devices 250.

The substrate 210 is a wiring substrate on which the first electrode 220 is disposed. The substrate 210 may include polyimide (PI) to implement a flexible display device. In addition, any insulating and flexible material may be used.

The first electrode 220 is disposed on the substrate 210 and may be formed as a long bar electrode in one direction. The first electrode 220 may serve as a data electrode.

A conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is located. The conductive adhesive layer 230 may be formed of an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing a conductive particle, or the like, as in a display device using a flip chip type light emitting device. ) And the like. However, the present embodiment also exemplifies the case where the conductive adhesive layer 230 is realized by the anisotropic conductive film.

If the semiconductor light emitting device 250 is connected to the semiconductor light emitting device 250 by applying heat and pressure after the anisotropic conductive film is positioned in a state where the first electrode 220 is positioned on the substrate 210, And is electrically connected to the electrode 220. In this case, the semiconductor light emitting device 250 may be disposed on the first electrode 220.

As described above, the electrical connection is generated because heat and pressure are applied to the anisotropic conductive film to partially conduct in the thickness direction. Therefore, in the anisotropic conductive film, it is divided into a portion having conductivity in the thickness direction and a portion having no conductivity.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 realizes electrical connection as well as mechanical bonding between the semiconductor light emitting element 250 and the first electrode 220.

Thus, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 250 may be 80 μm or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

The semiconductor light emitting device 250 may have a vertical structure.

A plurality of second electrodes 240 electrically connected to the vertical semiconductor light emitting device 250 are disposed between the vertical semiconductor light emitting devices in a direction crossing the longitudinal direction of the first electrode 220.

9, the vertical type semiconductor light emitting device includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255 An n-type semiconductor layer 253 formed on the active layer 254 and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the bottom may be electrically connected to the first electrode 220 by the conductive adhesive layer 230, and the n-type electrode 252 located at the top may be electrically connected to the second electrode 240 As shown in FIG. Since the vertical semiconductor light emitting device 250 can arrange the electrodes up and down, it has a great advantage that the chip size can be reduced.

Referring to FIG. 8 again, a phosphor layer 280 may be formed on one side of the semiconductor light emitting device 250. For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and a phosphor layer 280 for converting the blue (B) . In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, a red phosphor 281 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 251 at a position forming a red unit pixel, A green phosphor 282 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 251. In addition, only the blue semiconductor light emitting element 251 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied to a display device to which a flip chip type light emitting device is applied, as described above.

The second electrode 240 is located between the semiconductor light emitting devices 250 and electrically connected to the semiconductor light emitting devices 250. For example, the semiconductor light emitting devices 250 may be disposed in a plurality of rows, and the second electrode 240 may be disposed between the columns of the semiconductor light emitting devices 250.

The second electrode 240 may be positioned between the semiconductor light emitting devices 250 because the distance between the semiconductor light emitting devices 250 forming the individual pixels is sufficiently large.

The second electrode 240 may be formed as a long bar-shaped electrode in one direction and may be disposed in a direction perpendicular to the first electrode.

The second electrode 240 and the semiconductor light emitting device 250 may be electrically connected by a connection electrode protruding from the second electrode 240. More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting device 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a part of the ohmic electrode by printing or vapor deposition. Accordingly, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 can be electrically connected.

According to the example, the second electrode 240 may be disposed on the conductive adhesive layer 230. A transparent insulating layer (not shown) containing silicon oxide (SiOx) or the like may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed. When the second electrode 240 is positioned after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer. In addition, the second electrode 240 may be formed spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as ITO (Indium Tin Oxide) is used for positioning the second electrode 240 on the semiconductor light emitting device 250, the problem that the ITO material has poor adhesion with the n-type semiconductor layer have. Accordingly, the present invention has an advantage in that the second electrode 240 is positioned between the semiconductor light emitting devices 250, so that a transparent electrode such as ITO is not used. Therefore, the light extraction efficiency can be improved by using a conductive material having good adhesiveness with the n-type semiconductor layer as a horizontal electrode without being bound by transparent material selection.

According to the structure, the barrier ribs 290 may be positioned between the semiconductor light emitting devices 250. That is, the barrier ribs 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 forming the individual pixels. In this case, the barrier ribs 290 may separate the individual unit pixels from each other, and may be formed integrally with the conductive adhesive layer 230. For example, by inserting the semiconductor light emitting device 250 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier ribs 290 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, as the partition 190, a reflective barrier may be separately provided. The barrier ribs 290 may include black or white insulators depending on the purpose of the display device.

If the second electrode 240 is directly disposed on the conductive adhesive layer 230 between the semiconductor light emitting devices 250, the barrier ribs 290 may be formed between the vertical semiconductor light emitting device 250 and the second electrode 240 As shown in FIG. Therefore, individual unit pixels can be formed with a small size by using the semiconductor light emitting device 250, and the distance between the semiconductor light emitting device 250 can be relatively large enough so that the second electrode 240 can be electrically connected to the semiconductor light emitting device 250 ), And it is possible to realize a flexible display device having HD picture quality.

In addition, according to the present invention, a black matrix 291 may be disposed between the respective phosphors to improve the contrast. That is, this black matrix 291 can improve the contrast of light and dark.

As described above, the semiconductor light emitting device 250 is disposed on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. Therefore, a full color display in which red (R), green (G), and blue (B) unit pixels form one pixel can be realized by the semiconductor light emitting device.

In the display device using the semiconductor light emitting device of the present invention described above, when the flip chip type is applied, since the first and second electrodes are disposed on the same plane, it is difficult to realize a fixed pitch (fine pitch). Hereinafter, a display device to which such a flip chip type light emitting device according to another embodiment of the present invention can be solved will be described.

FIG. 10 is an enlarged view of a portion A in FIG. 1 for explaining another embodiment of the present invention to which a semiconductor light emitting device having a new structure is applied, FIG. 11A is a cross- 11, and FIG. 12 is a conceptual diagram showing the flip-chip type semiconductor light emitting device of FIG. 11A.

10, 11A, and 11B illustrate a display device 1000 using a passive matrix (PM) type semiconductor light emitting device as a display device 1000 using a semiconductor light emitting device. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device 1000 includes a substrate 1010, a first electrode 1020, a conductive adhesive layer 1030, a second electrode 1040, and a plurality of semiconductor light emitting devices 1050. Here, the first electrode 1020 and the second electrode 1040 may each include a plurality of electrode lines.

The substrate 1010 is a wiring substrate on which the first electrode 1020 is disposed, and may include polyimide (PI) to implement a flexible display device. In addition, any insulating and flexible material may be used.

The first electrode 1020 is disposed on the substrate 1010 and may be formed as a long bar electrode in one direction. The first electrode 1020 may serve as a data electrode.

A conductive adhesive layer 1030 is formed on the substrate 1010 where the first electrode 1020 is located. The conductive adhesive layer 1030 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing a conductive particle, or the like, as in a display device using a flip chip type light emitting device described above. solution or the like. However, in this embodiment, the conductive adhesive layer 1030 may be replaced with an adhesive layer. For example, if the first electrode 1020 is not located on the substrate 1010 but is formed integrally with the conductive electrode of the semiconductor light emitting device, the adhesive layer may not be conductive.

A plurality of second electrodes 1040 electrically connected to the semiconductor light emitting device 1050 are disposed between the semiconductor light emitting devices in a direction crossing the longitudinal direction of the first electrode 1020.

According to the illustration, the second electrode 1040 may be positioned on the conductive adhesive layer 1030. That is, the conductive adhesive layer 1030 is disposed between the wiring substrate and the second electrode 1040. The second electrode 1040 may be electrically connected to the semiconductor light emitting device 1050 by contact with the semiconductor light emitting device 1050.

The plurality of semiconductor light emitting devices 1050 are coupled to the conductive adhesive layer 1030 and are electrically connected to the first electrode 1020 and the second electrode 1040. [

A transparent insulating layer (not shown) containing silicon oxide (SiOx) or the like may be formed on the substrate 1010 on which the semiconductor light emitting element 1050 is formed. When the second electrode 1040 is positioned after the transparent insulation layer is formed, the second electrode 1040 is positioned on the transparent insulation layer. In addition, the second electrode 1040 may be formed apart from the conductive adhesive layer 1030 or the transparent insulating layer.

As shown in the figure, the plurality of semiconductor light emitting devices 1050 can form a plurality of rows in a direction parallel to a plurality of electrode lines provided in the first electrode 1020. However, the present invention is not limited thereto. For example, the plurality of semiconductor light emitting devices 1050 may form a plurality of rows along the second electrode 1040.

Furthermore, the display device 1000 may further include a phosphor layer 1080 formed on one surface of the plurality of semiconductor light emitting devices 1050. For example, the semiconductor light emitting device 1050 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 1080 converts the blue (B) light into the color of a unit pixel. The phosphor layer 1080 may be a red phosphor 1081 or a green phosphor 1082 constituting an individual pixel. That is, a red phosphor 1081 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 1051a at a position forming a red unit pixel, A green phosphor 1082 capable of converting blue light into green (G) light can be laminated on the blue semiconductor light emitting element 1051b. Further, only the blue semiconductor light emitting element 1051c can be used solely in the portion constituting the blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel. More specifically, phosphors of one color may be laminated along the respective lines of the first electrode 1020. Accordingly, one line in the first electrode 1020 may be an electrode for controlling one color. That is, red (R), green (G), and blue (B) may be arranged in order along the second electrode 1040, and a unit pixel may be realized through the red However, the present invention is not necessarily limited thereto. Instead of the fluorescent material, the semiconductor light emitting device 1050 and the quantum dot QD may be combined to form a unit pixel emitting red (R), green (G) and blue (B) Can be implemented.

In order to improve the contrast of the phosphor layer 1080, the display device may further include a black matrix 1091 disposed between the phosphors. The black matrix 1091 may be formed in such a manner that a gap is formed between the phosphor dots and a black material fills the gap. Through this, the black matrix 1091 absorbs the external light reflection and can improve contrast of light and dark. The black matrix 1091 is located between the respective phosphor layers along the first electrode 1020 in the direction in which the phosphor layers 1080 are stacked. In this case, a phosphor layer is not formed at a position corresponding to the blue semiconductor light emitting element 1051, but a black matrix 1091 is provided between the blue light emitting element 1051c and the blue light emitting element 1051c Respectively, on both sides.

Referring to the semiconductor light emitting device 1050 of the present embodiment, the semiconductor light emitting device 1050 has a great advantage that the chip size can be reduced because the electrodes can be arranged up and down. However, the electrodes may be arranged on the upper and lower sides, but the semiconductor light emitting device of the present invention may be a flip chip type light emitting device.

12, for example, the semiconductor light emitting device 1050 includes a first conductive type electrode 1156, a first conductive type semiconductor layer 1155 on which a first conductive type electrode 1156 is formed, A second conductive semiconductor layer 1153 formed on the active layer 1154 and a second conductive semiconductor layer 1153 formed on the second conductive semiconductor layer 1153. The active layer 1154 is formed on the first conductive semiconductor layer 1155, And includes a conductive electrode 1152.

More specifically, the first conductive type electrode 1156 and the first conductive type semiconductor layer 1155 may be a p-type electrode and a p-type semiconductor layer, respectively, and the second conductive type electrode 1152 and the second The conductivity type semiconductor layer 1153 may be an n-type electrode and an n-type semiconductor layer, respectively. However, the present invention is not limited thereto, and the first conductivity type may be n-type and the second conductivity type may be p-type.

More specifically, the first conductive type electrode 1156 is formed on one surface of the first conductive type semiconductor layer 1155, and the active layer 1154 is formed on the other surface of the first conductive type semiconductor layer 1155, The second conductive type semiconductor layer 1153 is formed on one surface of the second conductive type semiconductor layer 1153. The second conductive type semiconductor layer 1153 is formed on one surface of the second conductive type semiconductor layer 1153. [

In this case, the second conductive type electrode is disposed on one surface of the second conductive type semiconductor layer 1153, and an undoped semiconductor layer 1153a is formed on the other surface of the second conductive type semiconductor layer 1153 May be formed.

12, with reference to FIGS. 10 to 11B, one surface of the second conductive type semiconductor layer may be a surface closest to the wiring substrate, and the other surface of the second conductive type semiconductor layer It can be a far plane.

The first conductive type electrode 1156 and the second conductive type electrode 1152 may have a difference in height from each other in the width direction and the vertical direction (or in the thickness direction) at positions spaced apart along the width direction of the semiconductor light emitting device .

The second conductive type electrode 1152 is formed on the second conductive type semiconductor layer 1153 using the height difference but is disposed adjacent to the second electrode 1040 located on the upper side of the semiconductor light emitting element . For example, at least a portion of the second conductive electrode 1152 may extend from the side of the second conductive type semiconductor layer 1153 (or the side of the undoped semiconductor layer 1153a) As shown in FIG. Since the second conductive electrode 1152 protrudes from the side surface, the second conductive electrode 1152 may be exposed to the upper side of the semiconductor light emitting device. The second conductive electrode 1152 is disposed at a position overlapping the second electrode 1040 disposed on the conductive adhesive layer 1030.

More specifically, the semiconductor light emitting device includes protrusions 1152a that extend from the second conductive type electrode 1152 and protrude from the side surfaces of the plurality of semiconductor light emitting devices. In this case, the first conductive electrode 1156 and the second conductive electrode 1152 are disposed at positions spaced along the protruding direction of the protruding portion 1152a from the protruding portion 1152a, May be formed to have a height difference with respect to each other in a direction perpendicular to the protruding direction.

The protruding portion 1152a extends laterally from one surface of the second conductive type semiconductor layer 1153 and is formed on the upper surface of the second conductive type semiconductor layer 1153. More specifically, Lt; / RTI > The protrusion 1152a protrudes along the width direction from the side of the undoped semiconductor layer 1153a. Accordingly, the protrusion 1152a may be electrically connected to the second electrode 1040 on the opposite side of the first conductive type electrode with respect to the second conductive type semiconductor layer.

The structure including the protrusions 1152a may be a structure that can take advantage of the above-described horizontal semiconductor light emitting device and vertical semiconductor light emitting device. On the other hand, in the undoped semiconductor layer 1153a, fine grooves may be formed on the uppermost surface of the first conductive electrode 1156 by roughing.

According to the display device described above, light output from the semiconductor light emitting devices is excited by using a phosphor to realize red (R) and green (G). In addition, the black matrixes 191, 291, 1091, 3b, 8, and 11b described above serve as barrier ribs for preventing color mixing among the phosphors. Accordingly, the present invention proposes a structure of a phosphor layer capable of widening the filling space of the phosphor, and a barrier structure of a new type which is different from the conventional one capable of being flexible.

In addition, the display device described above has a real ppi type structure in which phosphors are deposited in the same shape in each pixel to realize red, green, and blue colors. Accordingly, the present invention proposes a new structure for implementing a display device in a pentile manner.

Hereinafter, a structure of a pentile display device having a new barrier rib structure will be described in detail with reference to the accompanying drawings.

13 is an enlarged view of a portion A in FIG. 1 for explaining another embodiment of the present invention, FIG. 14 is a cross-sectional view taken along the line GG in FIG. 13, FIG. 15 is a cross- FIG. 16 is a sectional view taken along line I-I in FIG. 13, and FIG. 17 is a view for explaining a modified embodiment of FIG.

13 to 17 illustrate a display device 2000 using the flip chip type semiconductor light emitting device described with reference to FIGS. 10 to 12 as a display device using a semiconductor light emitting device. More specifically, a case in which the structure of a new phosphor layer is applied in the flip chip type semiconductor light emitting device described with reference to FIGS. 10 to 12 will be exemplified. However, the example described below is also applicable to the display device using the other semiconductor light emitting element described above.

In this example described below, the same or similar reference numerals are given to the same or similar components as those of the example described above with reference to Figs. 10 to 12, and the description thereof is replaced with the first explanation. For example, the display device 2000 includes a substrate 2010, a first electrode 2020, a conductive adhesive layer 2030, a second electrode 2040, and a plurality of semiconductor light emitting devices 2050, The description is replaced with the description with reference to Figs. 10 to 12. Therefore, in this embodiment, the conductive adhesive layer 2030 is replaced with an adhesive layer, and a plurality of semiconductor light emitting elements are attached to an adhesive layer disposed on the substrate 2010, and the first electrode 2020 is formed on the substrate 2010 And can be formed integrally with the conductive electrode of the semiconductor light emitting element.

The second electrode 2040 may be disposed on the conductive adhesive layer 2030. That is, the conductive adhesive layer 2030 is disposed between the wiring substrate and the second electrode 2040. The second electrode 2040 may be electrically connected to the semiconductor light emitting device 2050 by contact with the semiconductor light emitting device 2050.

As described above, the display device 2000 may include a wavelength conversion layer 2080 disposed so as to cover a plurality of semiconductor light emitting devices 2050. For example, the semiconductor light emitting device 2050 is a blue semiconductor light emitting device that emits blue (B) light, and the wavelength converting layer 2080 converts the blue (B) light into a color of a unit pixel .

According to the illustration, the wavelength conversion layer 2080 includes a plurality of phosphor layers 2084 that convert the wavelength of light.

The plurality of phosphor layers 2084 may include a red phosphor layer 2084a having a red phosphor and a green phosphor layer 2084b having a green phosphor. A red phosphor layer 2084a capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 2051a at a position forming a red pixel, A green phosphor layer 2084b capable of converting blue light into green (G) light may be laminated on the semiconductor light emitting element 2051b.

On the other hand, one partition wall 2085 is disposed between the red phosphor layer 2084a and the green phosphor layer 2084b. Here, the partition part 2085 includes a light-transmitting layer made of a light-transmitting material and a reflection layer configured to reflect light.

At least one of the plurality of barrier ribs 2085 overlaps with at least one of the plurality of semiconductor light emitting devices along the thickness direction of the wavelength conversion layer 2080. At least one of the plurality of barrier ribs 2085 transmits light along the thickness direction of the wavelength conversion layer 2080. More specifically, one partition wall 2085 is disposed on the blue semiconductor light emitting element 2051c in the portion constituting the blue pixel, and the light emitted from the blue semiconductor light emitting element 2051c is emitted to the outside Lt; / RTI >

In this case, in order to sequentially arrange the pixels for outputting the blue light and the green light and the pixels for outputting the red light and the green light, a partition wall portion corresponding to blue, a green phosphor layer, a red phosphor layer, Portions can be alternately deposited.

Not only a phosphor layer or a barrier rib corresponding to one color is formed along each line of the first electrode 2020 but a line is an electrode for controlling one color and the other line is a line for controlling a plurality of colors . For example, a green phosphor layer may be disposed in any line of the first electrode 2020, and a red phosphor layer and a barrier rib corresponding to blue may be alternately arranged in the other line.

In addition, red (R), green (G), blue (B), and green (G) may be sequentially arranged along the second electrode 2040, The device can be implemented. However, the present invention is not necessarily limited to this. Instead of a phosphor, quantum dot QD may be filled in the phosphor layer to realize unit pixels emitting red (R), green (G) and blue (B) have.

More specifically, the plurality of partition portions 2085 include a first light transmitting layer 2086 and a second light transmitting layer 2087, a third light transmitting layer 2088, and a reflection layer 2089. [

The first light transmitting layer 2086 is disposed to cover the space between the plurality of semiconductor light emitting elements. Therefore, at least a part of the plurality of phosphor layers 2084 is disposed with the first light transmitting layer 2086 interposed therebetween. In this case, the at least part of the phosphor layers 2084 may include at least one of a red phosphor, a green phosphor, and a yellow phosphor. More specifically, the first light transmitting layer 2086 is located at a portion where a blue pixel is not disposed in a space between the red phosphor layer 2084a and the green phosphor layer 2084b which are repeatedly formed. Therefore, the semiconductor light emitting element is not disposed below the first light transmitting layer 2086.

Meanwhile, the second light transmitting layer 2087 covers at least one of the plurality of semiconductor light emitting elements. In this case, at least one of the plurality of semiconductor light emitting elements covered by the second light transmitting layer 2087 includes a blue semiconductor light emitting element 2051c. That is, the second light transmitting layer 2087 is located at a portion where a blue pixel is arranged in a space between the red phosphor layer 2084a and the green phosphor layer 2084b which are repeatedly formed. Therefore, the blue light emitting element 2051c is disposed under the second light transmitting layer 2087. [

The third light transmitting layer 2088 is disposed to surround the side surfaces of each of the phosphor layers 2084 and the semiconductor light emitting element is not disposed below the third light transmitting layer 2088. Accordingly, the light exiting from the side surfaces of the phosphor layers 2084 is first transmitted through the third light transmitting layer 2088. Since the third light transmitting layer 2088 surrounds the rim of the fluorescent layer 2084, the third light transmitting layer 2088 is disposed at an edge of at least a part of the plurality of semiconductor light emitting elements. For example, the third light transmitting layer 2088 may be disposed at the rim of the red phosphor layer 2084a and the green phosphor layer 2084b overlapping with the phosphor layer. Also, the third light transmitting layer 2088 may be formed at the edge of the blue semiconductor light emitting device 2051c not covered with the phosphor layer.

Meanwhile, the third light transmitting layer 2088 may be spaced apart from the first and second light transmitting layers 2086 and 2087 by a predetermined distance. The space formed by the first and second light transmitting layers 2086 and 2087 and the third light transmitting layer 2088 may be filled with a reflective material.

The reflective layer 2089 is formed in a space formed by the first and second light transmitting layers 2086 and 2087 and the third light transmitting layer 2088 being separated from each other. That is, the reflective layer 2089 is disposed between the first light transmitting layer 2086 and the third light transmitting layer 2088, or between the second light transmitting layer 2087 and the third light transmitting layer 2088. The reflective layer 2089 is disposed at the edge of the phosphor layer 2084. Since the third light transmitting layer is disposed between the reflective layer 2089 and the fluorescent layer 2084, 2084 are spaced apart from each other by a predetermined distance.

Meanwhile, the reflective layer 2089 is made of a white material having a high reflectivity. For example, the reflective layer 2089 may be made of titanium oxide, but the reflective layer 2089 may be a reflective material that can be filled by a photolithography process.

In order to realize the above-described structure, in the unit pixel emitting red (R), green (G) and blue (B), the first light transmitting layer 2086 and the second light transmitting layer 2087 may be disposed one by one. The first light transmitting layer 2086 and the second light transmitting layer 2087 are formed to have different widths W formed along a direction perpendicular to the thickness direction of the phosphor layer 2080 . Further, the third light transmitting layer 2088 may be disposed for each semiconductor light emitting element.

In this case, the width of the first light transmitting layer 2086 is smaller than that of the second light transmitting layer 2087. The width of the second light transmitting layer 2087 is greater than or equal to the width of the semiconductor light emitting device 2050 so that the width of the first light transmitting layer 2086 is greater than the width of the semiconductor light emitting device 2050 May be formed smaller than the width.

More specifically, the width of the second light transmitting layer 2087 may be 70 to 135% of the pitch between the pixels. If the second light transmitting layer 2087 is too large, the light emitting regions of the red pixel and the green pixel are not sufficiently secured. If the second light transmitting layer 2087 is too small, light may be interfered between the blue pixel and the red pixel or between the blue pixel and the green pixel to be.

In this case, the width of the first light transmitting layer 2086 may be 10 to 40% of the pitch between the pixels. As an example, if the pitch is 100 micrometers, the width of the first light transmitting layer 2086 may be 40 micrometers or less. This is to secure a sufficient light emitting area and to arrange at least one reflective layer 2089 and a third light transmitting layer 2088 between the semiconductor light emitting elements.

On the other hand, in the unit pixel, the third light transmitting layer 2088 may be arranged by the number of the reflective layers 2089. [ One side of the reflective layer 2089 is surrounded by one of the first and second light transmitting layers 2086 and 2087 and the other side of the reflective layer 2089 is surrounded by the third light transmitting layer 2088.

The width of the phosphor layer 2084 may be set to be greater than the width of the semiconductor light emitting device 2050. In addition, since only two partition walls exist in the unit pixel, and one of the two is smaller in width, the width of the phosphor layer 2084 can be further increased. As described above, since the width of the phosphor layer 2084 is increased, the filling space for the phosphor layer can be secured more than that of the conventional phosphor layer, and the amount of the phosphor to be filled can be further increased. In this case, the particle size of the phosphor to be filled in the phosphor layer can be 3 to 15 micrometers.

In this case, the plurality of barrier rib portions are sequentially disposed between the phosphor layers along each of the first direction and the second direction intersecting with each other. Thus, leakage of light can be prevented in both the longitudinal direction (corresponding to the first direction) and the lateral direction (corresponding to the second direction). Also, at least one of the sequentially arranged barrier ribs may overlap with at least one of the plurality of semiconductor light emitting elements. In this way, a new barrier structure can be applied in the horizontal and vertical directions in a pentalic display device.

At this time, the first light transmitting layer 2086 and the second light transmitting layer 2087 may be formed to have different widths formed along the lateral direction and the longitudinal direction. For example, the second light transmitting layer 2087 transmitting blue light may be formed to have a different width in the longitudinal direction and the transverse direction. According to the example, a case where the width in the vertical direction is larger than the width in the horizontal direction is exemplified.

The plurality of barrier ribs may be disposed between the first light transmitting layer 2086 and the third light transmitting layer 2088 or between the second light transmitting layer 2087 and the second light transmitting layer 2088. [ And the light transmitting layer 2088 is formed.

The light transmitting layer is a material having a high transmittance in the visible light region. For example, the light transmitting layer may be formed of an epoxy-based PR (photoresist), PDMS (polydimethylsiloxane), resin or the like. These materials are suitable as a material for the partition wall applied to the flexible display because they do not have rigidity at high temperatures.

The second light transmitting layer 2087 covers the blue semiconductor light emitting element, so that the light transmitting layer overlaps with the blue semiconductor light emitting element at a portion corresponding to the blue pixel. In this case, the light-transmitting layer overlapping with the blue semiconductor light emitting device is disposed between the green phosphor layers along one of the first direction and the second direction, and between the red phosphor layers along the other . In this example, the light-transmitting layer overlapping the blue semiconductor light emitting device is disposed between the green phosphor layers in the transverse direction and between the red phosphor layers in the vertical direction.

Each of the plurality of barrier ribs may have at least four sides, and the reflective layer may be disposed on the sides sequentially disposed along at least one of the horizontal direction and the vertical direction. As an example, each of the phosphor layers may be surrounded by the reflective layer along the lateral direction and the longitudinal direction. According to this structure, the red phosphor layer or the green phosphor layer can be surrounded by the reflective layer.

Meanwhile, as shown in FIG. 17, the reflective layer 2089 may have a protrusion 2089 '' extending in the direction from the upper side of the reflective layer toward the semiconductor light emitting device. The protrusion 2089 '' may be formed to cover a part of the light-transmitting layer surrounding the reflective layer 2089.

The protrusion 2089 '' may serve to increase the contrast ratio between the semiconductor light emitting devices. Specifically, the reflective layer 2089 and the phosphor layer 2084 are spaced a predetermined distance from each other due to the third light transmitting layer 2088, so that light emitted from the semiconductor light emitting device or light emitted from the phosphor layer spreads widely I can go out. The protruding portion 2089 '' reflects light traveling toward the side of the wavelength conversion layer from above the wavelength conversion layer and concentrates the light toward the upper side of the display device. In this way, the protrusion 2089 " can increase the contrast ratio of the display device.

According to the new phosphor layer structure as described above, a partition wall capable of improving the luminance of the display can be realized. Hereinafter, a method for forming a new phosphor layer structure as described above will be described in more detail with reference to the accompanying drawings. FIGS. 18A to 18C are views for explaining a method of manufacturing a display device using the semiconductor light emitting device according to the present invention, with reference to cross-sectional views taken along a line GG in FIG. 13, Sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device according to the present invention.

First, according to the manufacturing method, a step of joining a plurality of semiconductor light emitting elements to a substrate proceeds. For example, after the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer are grown on the growth substrate and each semiconductor light emitting device is formed by etching, the first conductivity type electrode 2156 and the second conductivity type Thereby forming the electrode 2152 (Fig. 18A).

The growth substrate 2101 (wafer) may be formed of any material having optical transparency, for example, sapphire (Al 2 O 3), GaN, ZnO, or AlO, but is not limited thereto. Further, the growth substrate 2101 may be formed of a carrier wafer, which is a material suitable for semiconductor material growth. And may include a conductive substrate or an insulating substrate, for example, a SiC substrate having higher thermal conductivity than a sapphire (Al2O3) substrate, or at least one of Si, GaAs, GaP, InP and Ga2O3 Can be used.

The first conductive type electrode 2156 and the first conductive type semiconductor layer may be a p-type electrode and a p-type semiconductor layer, respectively. The second conductive type electrode 2152 and the second conductive type semiconductor layer may be n- And an n-type semiconductor layer. However, the present invention is not limited thereto, and the first conductivity type may be n-type and the second conductivity type may be p-type.

In this case, as described above, at least a part of the second conductive type electrode 2152 protrudes from the side surface (or the side of the undoped semiconductor layer 2153a) of the second conductivity type semiconductor layer do.

Next, the flip chip type light emitting device is bonded to the wiring substrate using the conductive adhesive layer 2030, and the growth substrate is removed (FIG. 18B).

The first electrode 2020 is a lower wiring and is electrically connected to the first conductive electrode 2156 by a conductive ball or the like in the conductive adhesive layer 2030. [ do.

After the undoped semiconductor layer 2153a is etched and removed, a second electrode 2040 connecting the protruding second conductive electrode 2152 is formed (FIG. 18C). The second electrode 2040 is an upper wiring, and is directly connected to the second conductive electrode 2152.

However, the present invention is not necessarily limited to this, and the undoped semiconductor layer may be replaced with another type of absorption layer that absorbs the UV laser. The absorption layer may be a buffer layer, may be formed in a low-temperature atmosphere, and may be made of a material capable of alleviating the difference in lattice constant between the semiconductor layer and the growth substrate. For example, materials such as GaN, InN, AlN, AlInN, InGaN, AlGaN, and InAlGaN.

Next, a wavelength conversion layer disposed to cover the plurality of semiconductor light emitting elements is formed. The wavelength conversion layer includes a plurality of phosphor layers for converting the wavelength of light and a plurality of barrier ribs formed between the plurality of phosphor layers. In this case, at least one of the plurality of barrier ribs may overlap with at least one of the plurality of semiconductor light emitting devices along the thickness direction of the wavelength conversion layer.

According to the drawing, first, the step of forming the partition wall portion may proceed. Referring to FIG. 19A, a light transmitting material LT is applied to the plurality of semiconductor light emitting elements.

The light transmissive material LT is a material having a high transmittance in the visible light region, and as described above, an epoxy-based PR (photoresist), PDMS (polydimethylsiloxane), resin, or the like can be used.

Thereafter, the step of etching the light-transmitting material and filling the phosphor-coated portion LR with the light-transmitting material LT to form the phosphor layers.

More specifically, referring to FIG. 19B, the light transmitting material LT is etched, and in this case, the light transmitting material LT is ungrown at a portion corresponding to at least one of the plurality of semiconductor light emitting elements.

That is, the light-transmitting material LT may be divided into a portion disposed to cover the space between the plurality of semiconductor light emitting elements and a portion disposed to cover at least one of the plurality of semiconductor light emitting elements have.

On the other hand, the second light transmitting layer 2087 and the third light transmitting layer 2088 may be formed by etching a portion disposed to cover between the semiconductor light emitting elements. In this case, the central portion of the portion arranged to cover between the semiconductor light emitting elements is not etched but only the edge portion is etched. In this case, between the two semiconductor light emitting devices not covered with the first light transmitting layer 2087, a second light transmitting layer 2086 and two third light transmitting layers 2088 may be disposed.

Although not shown, the light-transmitting material LT may be etched at the central portion of a portion arranged to cover between the semiconductor light emitting elements. That is, the third light transmitting layer is formed as the central portion of the portion disposed to cover the semiconductor light emitting elements is etched, and the first light transmitting layer and the third light transmitting layer may be spaced apart from each other by a predetermined distance have. In addition, two third light transmission layers may be disposed between two semiconductor light emitting devices not covered by the first light transmission layer.

18C, a space formed between the first light transmitting layer 2086 and the third light transmitting layer 2088, between the second light transmitting layer 2087 and the third light transmitting layer 2088 is filled with a reflective material do.

In this case, the reflective material may be filled through a photolithography process. In performing the phosphorous lithography process, the light-transmitting layer serves as a supporting layer for supporting the reflective material. The height of the reflective layer can be adjusted by controlling the amount of the reflective material filled between the two light transmitting layers. As described above, the main component of the reflective material may be titanium oxide, but is not limited thereto.

On the other hand, the reflective layer must be formed so as not to overlap with the semiconductor light emitting device. When the reflective layer overlaps with the semiconductor light emitting device, the brightness of the display device can be reduced.

As described above, since the reflection layer according to the present invention is formed by filling between two different light transmission layers, the amount of the reflection material to be filled between the two light transmission layers and the height of the light transmission layer are adjusted, The height can be easily adjusted.

The above-described display device using the semiconductor light emitting device is not limited to the configuration and the method of the embodiments described above, but all or a part of the embodiments may be selectively combined so that various modifications may be made to the embodiments It is possible.

Claims (12)

A substrate on which wiring electrodes are formed;
A plurality of semiconductor light emitting elements electrically connected to the wiring electrodes;
A plurality of phosphor layers arranged to convert a wavelength of light and to cover at least a part of the plurality of semiconductor light emitting elements; And
A plurality of barrier ribs disposed between the plurality of phosphor layers, the barrier ribs having a plurality of light transmission layers made of a light-transmitting material and a plurality of reflection layers configured to reflect light,
And the light transmitting layers are arranged to surround the reflective layers. The method according to claim 1,
Wherein,
Is filled between two different light transmitting layers. 3. The method of claim 2,
Wherein,
Wherein the plurality of semiconductor light emitting devices are disposed between the semiconductor light emitting devices and are spaced apart from at least one of the semiconductor light emitting devices by a predetermined distance. 3. The method of claim 2,
Wherein,
And at least one of the phosphor layers is disposed to surround at least one of the phosphor layers, and is arranged to be spaced apart from at least one of the phosphor layers by a predetermined distance. The method according to claim 1,
A part of the light-transmitting layers overlaps with a part of the semiconductor light-emitting elements,
And the other part of the light transmitting layers is disposed between the semiconductor light emitting elements. 6. The method of claim 5,
The light-
A first light transmitting layer disposed to overlap with a part of the semiconductor light emitting elements;
A second light transmitting layer disposed between the semiconductor light emitting elements; And
And a third light transmitting layer disposed on the edge of the semiconductor light emitting elements. The method according to claim 6,
The reflective layers,
And the third light transmitting layer is disposed between the first light transmitting layer and the third light transmitting layer. The method according to claim 6,
And the third light transmitting layer is disposed between the second light transmitting layer and the third light transmitting layer. The method according to claim 1,
Wherein,
And a protrusion extending from the upper side of the reflective layer toward the semiconductor light emitting element. 10. The method of claim 9,
The projection
Wherein the reflective layer is formed to cover a part of the light transmission layer surrounding the reflective layer. Bonding a plurality of semiconductor light emitting elements to an adhesive layer formed on a substrate;
Covering the semiconductor light emitting elements and applying a light-transmitting material;
Etching a part of the light-transmitting material to form a plurality of light-transmitting layers;
Forming a reflective layer by filling a reflective material between the plurality of optically transparent layers; And
And forming phosphor layers arranged to cover at least a part of the plurality of semiconductor light emitting elements,
Wherein the reflective layer is formed between the plurality of semiconductor light emitting elements. 12. The method of claim 11,
In the step of etching a part of the light-transmitting material,
Wherein the light-transmitting material covering at least one of the semiconductor light emitting devices is not etched.

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