KR20170050900A - Organic electronic device - Google Patents

Abstract

The present invention relates to an organic electronic device and a use thereof. According to the present invention, the organic electronic device exhibiting excellent optical extraction efficiency and durability, for example, a flexible element, can be provided. The organic electronic device can be applied to a light source for a lamp or a display or the like. The organic electronic device comprises: a substrate area having a base material film, and a first inorganic layer formed in an upper part of the base material film; an element area having a first electrode layer, an organic layer, and a second electrode layer sequentially present on the substrate area; and an upper area having a second inorganic layer and a cover film sequentially present on the element area.

Description

[0001] ORGANIC ELECTRONIC DEVICE [0002]

The present application relates to organic electronic devices and uses thereof.

BACKGROUND ART Organic electronic devices such as organic light emitting devices (OLEDs), organic solar cells, organic photoconductors (OPCs), and organic transistors include organic layers that are vulnerable to external factors such as moisture. Thus, for example, Patent Documents 1 to 4 propose structures capable of blocking the penetration of foreign substances.

In a flexible structure in which a plastic substrate or the like which is more vulnerable to penetration of foreign substances is applied, a layer such as a barrier layer may be further included. Usually, the barrier layer is implemented using an inorganic material, and thus the organic electronic device including the barrier layer has a structure in which the inorganic layer and the organic layer are mixed. Since the inorganic layer and the organic layer generally have different thermal expansion characteristics, stress can be easily generated in the device, and such stress can be generated even when the flexible device is bent. The stress or the like generated as described above has a very bad influence on the durability and the like.

U.S. Patent No. 6,226,890 U.S. Patent No. 6,808,828 Japanese Patent Application Laid-Open No. 2000-145627 Japanese Patent Laid-Open No. 2001-252505

The present application provides organic electronic devices and uses thereof.

Exemplary organic electronic devices include a substrate film 101, a first inorganic layer 102, a first electrode layer 103, an organic layer 104, a second electrode layer 105, A second inorganic layer 106 and a cover film 107. [ Each of the layers may be directly laminated in a state where there is no other layer between adjacent layers, or may be laminated via another layer.

Unless otherwise specified otherwise, the term " upward direction " means a direction from the first electrode layer toward the second electrode layer, and the term " lower direction " means a direction from the second electrode layer toward the first electrode layer it means.

In the following description, for convenience of description, a region including all the elements (excluding the first electrode layer) existing under the first electrode layer in the structure is referred to as a substrate region, and a first electrode layer and a second electrode layer, An area including all elements present is referred to as an element region, and an area including all the elements (except for the second electrode layer) existing on the upper portion of the second electrode layer is referred to as an upper region.

The kind of the base film is not particularly limited. For example, a substrate film commonly known in the industry that can be used in the implementation of flexible devices can be used. Typical examples of such a base film include a thin film glass film and a polymer film. As the glass film, a film formed of soda lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass or quartz can be exemplified. Examples of the polymer film include polyimide (PI) (PEN), poly (ethylene naphthalate), PC (polycarbonate), acrylic resin, poly (ethylene terephthalate) It is not.

As the base film, a light transmitting film can be used. The term light-transmitting film in the present specification may mean, for example, a film having a transmittance of at least 50%, at least 60%, at least 70%, or at least 80% for light in any one of the visible light regions or in the entire visible light region . Depending on the structure of the organic electronic device, a film other than a light transmitting film may be used as a base film. If necessary, a reflective layer may be formed on the surface of the film using a reflective material such as aluminum. The base film may be a TFT base film on which a driving TFT (Thin Film Transistor) exists.

The substrate film may have a coefficient of thermal expansion (CTE) in the range of about 5 ppm / ° C to 70 ppm / ° C. Such a range may be advantageous for preventing defects such as delamination, which may occur in a structure in which an organic layer and an inorganic layer are mixed.

The substrate film may have a glass transition temperature of about 200 ° C or higher. The glass transition temperature may be a glass transition temperature of the base film itself or a glass transition temperature of a base film on which a buffer layer described later is formed. This range may be suitable for high temperature processes for deposition or patterning in the fabrication of organic electronic devices. The glass transition temperature may, in another example, be at least about 210 ° C, at least about 220 ° C, at least about 230 ° C, at least about 240 ° C, or at least about 250 ° C. The upper limit of the glass transition temperature is not particularly limited, and may be, for example, about 400 ° C, 350 ° C, or 300 ° C.

The base film may be adjusted to have a root mean square (RMS) within a range of about 0.1 nm to 5 nm. Such surface roughness may be on the surface of the base film itself or on the surface of the buffer layer of the base film on which a buffer layer described later is formed. This range of surface roughness can be advantageous for improving the performance of the layer formed on the top. For example, when the first inorganic layer is formed to have barrier properties, if the first inorganic layer is formed on the surface having the surface roughness in the above range, it is possible to form a layer having more excellent water barrier properties have. The surface roughness may, in another example, be about 4 nm or less, about 3 nm or less, about 2.5 nm or less, or about 2 nm or less.

The substrate film may have a refractive index of at least about 1.5, at least about 1.6, at least about 1.7, or at least about 1.75. As used herein, the term refractive index refers to the refractive index measured for light at a wavelength of about 550 nm, unless otherwise specified. When the organic electronic device is an organic light emitting device, the range of the refractive index of the base film may be advantageous to increase the light efficiency of the device. The upper limit of the refractive index of the base film is not particularly limited, and may be, for example, about 2.0.

The thickness of the base film is not particularly limited and may be selected within an appropriate range in consideration of the desired performance, for example, flexibility, light extraction efficiency, or barrier property. For example, the thickness of the substrate film can be in the range of about 10 microns to about 50 microns, or in the range of about 20 microns to about 30 microns.

The first inorganic layer is a layer containing an inorganic material, and the kind of the inorganic material can be selected in consideration of the desired performance. As used herein, the term inorganic layer can be, for example, a layer containing at least 50% or 60% of an inorganic material by weight. The inorganic layer may contain only an inorganic substance, or may contain other components such as an organic substance if it contains an inorganic substance within the above range. The first inorganic layer may be, for example, a barrier layer. As used herein, the term barrier layer may be a layer that can block, inhibit, or mitigate the penetration of external factors, such as moisture or moisture, that may adversely affect the performance of devices such as organic layers. For example, the barrier layer may be a layer having a water vapor transmission rate (WVTR) of 10-4 g / m < 2 > / day or less. The WVTR herein may be a value to be measured using a meter (e.g., PERMATRAN-W3 / 31, MOCON, Inc.) at 40 ° C and 90% relative humidity conditions.

The barrier layer can be formed using a material known to mitigate, prevent or inhibit penetration of external factors such as moisture and oxygen. Examples of such materials include metals such as In, Sn, Pb, Au, Cu, Ag, Al, Ti and Ni; Metal oxides such as TiO, TiO2, Ti3O3, Al2O3, MgO, SiO, SiO2, GeO, NiO, CaO, BaO, Fe2O3, Y2O3, ZrO2, Nb2O3 and CeO2; Metal nitrides such as SiN; Metal oxynitrides such as SiON; Or metal fluorides such as MgF2, LiF, AlF3, and CaF2, and other known materials such as an absorbent material having a water absorption rate of 1% or more and a moisture-proof material having an absorption coefficient of 0.1% or less.

The first inorganic layer may have a single-layer structure or a multi-layer structure. The multi-layer structure may include a structure in which the same or different inorganic layers are laminated, or a structure in which an inorganic layer and an organic layer are laminated. For example, when the first inorganic layer is formed into a multilayer structure as the barrier layer, it is not necessary that each layer is formed of a material having barrier properties, and if the finally formed multilayer structure can exhibit the desired barrier property, Some of the layers may be formed of a layer having no barrier property. It may be advantageous to form the inorganic layer into a multilayer structure in view of preventing the propargation of defects such as pin holes that may occur during the formation of the inorganic layer. Further, the barrier layer of a multilayer structure may be advantageous also for the formation of a barrier layer which secures a refractive index, which will be described later.

It is preferable that the first inorganic layer has a small refractive index difference with respect to the base film. For example, the absolute value of the difference in refractive index between the first inorganic layer and the base film may be about 1 or less, about 0.7 or less, about 0.5 or less, or about 0.3 or less. Therefore, when the base film has a high refractive index as described above, the refractive index equivalent to that of the inorganic layer can be ensured. For example, the index of refraction of the inorganic layer may be about 1.5 or more, about 1.6 or more, about 1.7 or more, or about 1.75 or more. When the organic electronic device is an organic light emitting device, the range of the refractive index of the base film may be advantageous to increase the light efficiency of the device. The upper limit of the refractive index of the inorganic layer is not particularly limited, and may be, for example, about 2.0.

The first inorganic layer may include, for example, a laminated structure of a first sub-layer and a second sub-layer. The laminated structure may be repeated two or more times.

In one example, the first sub-layer may have a first index of refraction and the second sub-layer may have a second index of refraction. When these layers are laminated, it may be advantageous to adjust the refractive index of the inorganic layer to the above-mentioned range while securing a decoupling effect. The absolute value of the difference between the first refractive index and the second refractive index may be, for example, in the range of 0.1 to 1.2. For example, the refractive index of the first sub-layer is in the range of 1.4 to 1.9, and the refractive index of the second sub-layer is in the range of 2.0 to 2.9, while the refractive index of the second sub- 2.6. ≪ / RTI > The first and second sub-layers as described above may each be a metal oxide layer. For example, Al 2 O 3 and the like are suitable materials for the first sub-layer, and TiO 2 and the like are suitable materials for the second sub-layer. However, the final lamination structure has barrier properties Various materials can be applied as long as they can be used.

In another example, the first sub-layer may be a metal layer and the second sub-layer may be an organic silicon layer. As used herein, the term metal layer is a layer containing at least 40%, at least 50%, or at least 60% by weight of metal, and such metal may be included alone or in the form of a metal oxide or alloy. By such a laminated structure, an appropriate decoupling effect can be ensured and a layer having a desired performance, for example, excellent barrier properties can be formed. The metal layer may be, for example, a metal oxide layer, and the refractive index may, for example, be in the range of about 1.4 to 2.6. In one example, the metal layer can be formed of a metal oxide, for example, Al2O3, TiO2, or the like, which can be used as the material of the above-mentioned barrier layer.

The organic silicon layer may include, for example, a compound represented by the following formula (1) or a compound represented by the following formula (2), or may include a polymer containing polymerized units of the compound.

[Chemical Formula 1]

R1 (R12SiO) nR1

(2)

In formula (1), R 1 may each independently be hydrogen, a hydroxy group, an epoxy group, an alkoxy group or a monovalent hydrocarbon group, and n may be in the range of 1 to 10, 1 to 8, 1 to 6 or 1 to 4.

In formula (2), Rd and Re may each independently be hydrogen, a hydroxy group, an epoxy group, an alkoxy group or a monovalent hydrocarbon group, and o may be a number within a range of from 3 to 10, from 3 to 8, from 3 to 6 or from 3 to 4.

As used herein, the term " monovalent hydrocarbon group " may mean a monovalent residue derived from a compound consisting of carbon and hydrogen or a derivative of such a compound, unless otherwise specified. For example, the monovalent hydrocarbon group may contain 1 to 25 carbon atoms. As the monovalent hydrocarbon group, an alkyl group, an alkenyl group, an alkynyl group or an aryl group can be exemplified.

The term "alkyl group" as used herein may mean an alkyl group having 1 to 20 carbon atoms, 1 to 16 carbon atoms, 1 to 12 carbon atoms, 1 to 8 carbon atoms or 1 to 4 carbon atoms, unless otherwise specified. The alkyl group may be linear, branched or cyclic. In addition, the alkyl group may be optionally substituted with one or more substituents.

The term "alkoxy group" as used herein may mean an alkoxy group having 1 to 20 carbon atoms, 1 to 16 carbon atoms, 1 to 12 carbon atoms, 1 to 8 carbon atoms or 1 to 4 carbon atoms, unless otherwise specified. The alkoxy group may be linear, branched or cyclic. In addition, the alkoxy group may be optionally substituted with one or more substituents.

The term "alkenyl group" as used herein may mean an alkenyl group having 2 to 20 carbon atoms, 2 to 16 carbon atoms, 2 to 12 carbon atoms, 2 to 8 carbon atoms, or 2 to 4 carbon atoms unless otherwise specified. The alkenyl group may be linear, branched or cyclic and may optionally be substituted with one or more substituents.

The term "alkynyl group" as used herein may mean an alkynyl group having 2 to 20 carbon atoms, 2 to 16 carbon atoms, 2 to 12 carbon atoms, 2 to 8 carbon atoms, or 2 to 4 carbon atoms unless otherwise specified. The alkynyl group may be linear, branched or cyclic and may optionally be substituted with one or more substituents.

In the present specification, the term "aryl group" may mean a monovalent residue derived from a compound or a derivative thereof including a structure in which a benzene ring or two or more benzene rings are condensed or bonded, unless otherwise specified. The range of the aryl group may include a so-called aralkyl group or an arylalkyl group as well as a functional group ordinarily called an aryl group. The aryl group may be, for example, an aryl group having 6 to 25 carbon atoms, 6 to 21 carbon atoms, 6 to 18 carbon atoms, or 6 to 12 carbon atoms. Examples of the aryl group include a phenyl group, dichlorophenyl, chlorophenyl, phenylethyl, phenylpropyl, benzyl, tolyl, xylyl group or naphthyl group.

As used herein, the term epoxy group may mean a monovalent moiety derived from a cyclic ether or a cyclic ether containing three ring constituent atoms, unless otherwise specified. As the epoxy group, a glycidyl group, an epoxy alkyl group, a glycidoxyalkyl group or an alicyclic epoxy group can be exemplified. The alicyclic epoxy group may be a monovalent residue derived from a compound containing a structure containing an aliphatic hydrocarbon ring structure and having a structure in which two carbon atoms forming the aliphatic hydrocarbon ring also form an epoxy group. As the alicyclic epoxy group, an alicyclic epoxy group having 6 to 12 carbon atoms can be exemplified, and for example, 3,4-epoxycyclohexylethyl group and the like can be exemplified.

Examples of the substituent which may optionally be substituted in the epoxy group, alkoxy group or monovalent hydrocarbon group include halogen such as chlorine or fluorine, epoxy group such as glycidyl group, epoxy alkyl group, glycidoxyalkyl group or alicyclic epoxy group, acryloyl group, A methacryloyl group, an isocyanate group, a thiol group or a monovalent hydrocarbon group, but the present invention is not limited thereto.

As the compound of the formula (1) or (2), trivinyltrimethylcyclosiloxane, hexamethyldisiloxane, 1,3,5-trivinyl-1,1,3,5,5-pentamethyltrisiloxane and the like can be mentioned, But is not limited thereto.

The thickness of the inorganic layer is not particularly limited and may be appropriately selected depending on the intended use. For example, the thickness of the inorganic layer may be in the range of about 5 nm to about 60 nm, or in the range of about 10 nm to about 55 nm. In the case of a multi-layer structure, the thickness range of each sub-layer in the multi-layer structure may be in the range of, for example, from about 0.5 nm to about 10 nm or from about 0.5 nm to about 5 nm.

The conditions for forming the inorganic layer can be adjusted for achieving the desired performance, for example, excellent barrier property or refractive index. For example, the inorganic layer may have a flat surface such as a root mean square (RMS) of 5 nm or less, 4.5 nm or less, 4.0 nm or less, 3.5 nm or less, 3.0 nm or less, 2.5 nm or less, 2.0 nm or less, 1.5 nm or less, 1.0 nm or less, or 0.5 nm or less. When the inorganic layer is formed on such a flat surface, the film quality of the layer to be formed can be further improved. The surface roughness may be adjusted by using a material having excellent flatness, or may be adjusted through a buffer layer or the like as described later. Another way to achieve desired performance, for example, barrier properties, is to control the temperature during the formation of the inorganic layer. Generally, the inorganic layer can be formed using a physical or chemical vapor deposition method. In this process, excellent barrier property can be secured when the deposition temperature is controlled to a high temperature, for example, a temperature of 200 ° C or more.

The inorganic layer may be formed by physical vapor deposition (PVD) such as sputtering, pulsed laser deposition (PLD), electron beam evaporation, thermal evaporation, or L-MBE (Molecular Beam Epitaxy) (Chemical Vapor Deposition) such as Metal Organic Chemical Vapor Deposition (HVPE), Initiated Chemical Vapor Deposition (iCVD), Plasma Enhanced Chemical Vapor Deposition (PECVD) or Atomic Layer Deposition (ALD) . The performance of the inorganic layer can be maximized by selecting an appropriate method from among the above methods depending on the materials used. The CVD method can be applied to the formation of the layer using the material described in the present application, and in particular, ALD or iCVD method can be applied. For example, the layer formed of the metal or the metal oxide may be formed by the ALD method, and the layer of the organic silicon or the like may be formed by the iCVD method. Hereinafter, the term ALD layer refers to a layer formed by an ALD method, and the iCVD layer refers to a layer formed by an iCVD method.

The substrate area may be in the range of 3% to 90%, 3% to 85%, 3% to 50%, or 3% to 30% haze. Such a haze range may be advantageous, for example, in increasing the light extraction efficiency. If necessary, other factors such as a gap with the electrode layer of the light emitting unit, as described later, can be adjusted for higher light extraction efficiency. However, in the case of designing a structure in which light in the organic layer is emitted upward, the haze of the substrate region does not necessarily have to fall within the above-mentioned range. In order to adjust the haze of the substrate region, the haze of the base film of the substrate region may be controlled, or a scattering layer or scattering adhesive described later may be applied.

In consideration of the haze of the substrate region, the substrate film having haze may be used. However, when the haze of the substrate region is ensured by another layer as described later, the substrate film does not necessarily have haze. When having a haze, the haze of the base film may be in the range of 3% to 90%. The other lower limit of the haze may be, for example, 5% or 10%. The other upper limit of the haze may be, for example, about 85%, 80%, 75%, 70%, 65%, 60%, 55%, 50%, 45%, 40%, 35% . The method of causing the substrate to have a haze is not particularly limited, and a conventionally applied method for generating haze may be applied. For example, in the case of a polymer film, a method of adding scattering particles having a refractive index different from that of the surrounding polymer matrix and having an appropriate average particle size, or a method of adding a monomer capable of exhibiting haze in the polymer itself, A method of polymerizing a monomer exhibiting a refractive index in a range different from that of the polymer and forming a film using such a polymer may be applied.

The substrate region may include additional layers. As a layer which may additionally exist in the substrate region, a scattering layer, a buffer layer, a carrier substrate, a barrier film or an adhesive layer and the like can be exemplified.

The buffer layer can be formed to ensure interlayer adhesion or to control the surface roughness of the base film described above. The buffer layer may be formed, for example, on an upper portion of the base film, a scattering layer formed thereon, or the like, or between the barrier layer and the first electrode layer, but is not limited thereto. The buffer layer formed in the substrate region may be referred to as a first buffer layer, and the buffer layer formed in the upper region may be referred to as a second buffer layer. Can be called.

The buffer layer may be formed of a high-refraction layer. As used herein, the term high refractive index layer may refer to a layer having a refractive index of at least about 1.6, at least about 1.65, at least about 1.7, or at least about 1.75. The upper limit of the refractive index of the high-refractive-index layer is not particularly limited, and may be, for example, about 2.5 or about 2.0. Such a refractive index can be advantageous for improving the light extraction efficiency, for example.

The buffer layer can be formed using any suitable material without any particular limitations as long as it is a material capable of forming efficiently and ensuring interlayer adhesiveness and flatness appropriately. The buffer layer may be made of an inorganic material such as Al, a metal such as SiOx, SiOxNv, SiNx, AlOx, ZnSnOx, ITO, ZnO, IZO, ZnS, MgO or SnOx, a polycarbonate resin having a polyimide or fluorene ring (meth) acrylate), or organosilicon, and the like, for example, by using an organic material such as urethane, epoxide, polyester, polyamic acid, polyimide, polyethyleneimine, polyvinyl alcohol, polyamide, polythiol, . As the organosilicon, there may be mentioned the compound mentioned in the item of the inorganic layer or a polymer containing it as a polymerization unit. In another example, the buffer layer may be formed by using a compound in which a compound such as an alkoxide or acylate of a metal such as zirconium, titanium or cerium is blended with a binder having a polar group such as a carboxyl group or a hydroxyl group. The compound such as the alkoxide or the acylate may undergo a condensation reaction with the polar group in the binder, and may incorporate the metal in the skeleton of the binder to realize a high refractive index. Examples of the alkoxide or acylate compound include titanium alkoxides such as tetra-n-butoxytitanium, tetraisopropoxytitanium, tetra-n-propoxytitanium or tetraethoxytitanium, titanium stearate and the like Titanium chelates, tetra-n-butoxyzirconium, tetra-n-propoxyzirconium, tetraisopropoxyzirconium or tetraethoxyzirconium, zirconium alkoxide such as zirconium tributoxystearate, Acylate, zirconium chelates, and the like.

The buffer layer can be formed by selecting a suitable material from the above-mentioned materials. When it is required that the buffer layer has a high index of refraction, it is preferable to select a material having a high index of refraction by itself from among the above-mentioned materials, or to combine the appropriate material selected with the high refractive index particles and the Ti precursor Materials with high refractive index materials can be used. As used herein, the term " high refractive index particles " may mean particles having a refractive index of 1.5 or higher, 2.0 or higher, 2.5 or higher, 2.6 or higher, or 2.7 or higher, for example. The upper limit of the refractive index of the high refractive index particles can be selected within a range that can satisfy the desired refractive index, for example. The high refractive index particles may be, for example, from 1 nm to 100 nm, from 10 nm to 90 nm, from 10 nm to 80 nm, from 10 nm to 70 nm, from 10 nm to 60 nm, from 10 nm to 50 nm, Of the average particle diameter. As the high refractive index particles, alumina, aluminosilicate, titanium oxide, zirconium oxide, or the like can be exemplified. As the high refractive index particles, for example, rutile titanium oxide can be used as the particles having a refractive index of 2.5 or more. The rutile-type titanium oxide has a higher refractive index than other particles, and therefore, it is possible to adjust the refractive index to a desired value at a relatively small ratio.

The method of forming the buffer layer is not particularly limited, and for example, an appropriate method may be applied among the PVD or CVD described above, and in particular, the iCVD method may be suitable. In another example, the buffer layer may be formed by various wet processes including a sol-gel coating method in which a coating liquid is prepared by blending a metal alkoxide such as titanium alkoxide or zirconium alkoxide, and a solvent such as alcohol or water, Or a dry coating method.

The thickness of the buffer layer is not particularly limited and can be appropriately selected in consideration of the position where the buffer layer is formed and the required function. For example, when the buffer layer is formed on the scattering layer to secure a flat surface, a somewhat higher thickness may be required than when the buffer layer is formed on the base film for securing a flat surface.

In order to ensure proper haze of the substrate region, the substrate region may further include a scattering layer. As used herein, the term scattering layer may refer to any kind of layer that is formed, for example, to be able to scatter, refract, or diffract light incident on that layer. The implementation of the scattering layer is not particularly limited as long as the above-described functions are realized.

For example, the scattering layer may be a layer including a matrix material and a scattering region. As used herein, the term " scattering region " means a region having a refractive index different from that of the matrix material or the surrounding material such as the buffer layer, and having an appropriate size to scatter, refract, or diffract the incident light . The scattering region may be, for example, a particle or an empty space. For example, a scattering region can be formed using particles having a refractive index different from that of the surrounding material and higher or lower than that of the surrounding material. The refractive index of the scattering particles may be such that the difference in refractive index between the surrounding material, for example, the matrix material and / or the buffer layer, is more than 0.3 or more than 0.3. For example, the scattering particles may have a refractive index of about 1.0 to 3.5 or 1.0 to 3.0. The refractive index of the scattering particles may be, for example, 1.0 to 1.6 or 1.0 to 1.3. In another example, the refractive index of the scattering particles may be on the order of 2.0 to 3.5 or 2.2 to 3.0. As the scattering particles, for example, particles having an average particle diameter of 50 nm or more, 100 nm or more, 500 nm or more, or 1,000 nm or more can be exemplified. The average particle diameter of the scattering particles may be, for example, 10,000 nm or less. The scattering region may also be formed by a space filled with air as an empty space having the above-described size.

The scattering particles or regions may have a shape such as spherical, elliptical, polyhedral, or amorphous, but the shape is not particularly limited. Examples of the scattering particles include organic materials such as polystyrene or a derivative thereof, an acrylic resin or a derivative thereof, a silicone resin or a derivative thereof, or a novolak resin or a derivative thereof, or an organic material such as silica, alumina, titanium oxide or zirconium oxide Particles containing an inorganic material and the like can be exemplified. The scattering particles may include only one of the above-mentioned materials, or may include two or more of the above materials. For example, as the scattering particles, hollow particles such as hollow silica or particles having a core / shell structure can be used. The scattering layer may further comprise a matrix material that retains scattering regions such as scattering particles. The kind of the matrix material that can be used is not particularly limited, and for example, a suitable material among the materials mentioned as being usable for forming the buffer layer can be selected and used.

In another example, the scattering layer may be a layer having a concave-convex structure. The incident light can be scattered when the concavo-convex structure of the scattering layer is appropriately adjusted and, if necessary, a buffer layer having an appropriate refractive index is formed thereon. The scattering layer having the concavo-convex structure may be formed by, for example, curing the material in a state in which it is brought into contact with a mold capable of transferring a convexo-concave structure of a desired shape in a process of curing a heat or photo- A layer of a material to be formed is formed in advance, and then an irregular structure is formed through an etching process or the like. Alternatively, they may be formed in such a manner that particles having an appropriate size and shape are blended in a binder for forming a scattering layer. In this case, the particle does not necessarily have to have a scattering function, but particles having a scattering function may be used.

The scattering layer may be formed by, for example, a coating method such as a wet or dry coating method, a deposition method such as PVD or CVD, or a nanoimprinting method or a micro-embossing method.

As another layer that can be included in the substrate region, a barrier film can be exemplified. A substrate film having relatively low barrier property is applied in a flexible structure in comparison with a rigid structure in which a substrate having excellent barrier properties such as a glass substrate is used. In order to compensate for the barrier property, therefore, an additional barrier film is used, Lt; / RTI > As the barrier film, there can be used those which can ensure appropriate barrier properties and transmittance when necessary, without any particular limitation.

The barrier film may be attached to the base film by, for example, an adhesive layer. The term adhesive layer in the present specification is a term encompassing not only a material commonly referred to as an adhesive but also a layer formed by using a material called a so-called adhesive or a material called a point adhesive. The material for forming the adhesive layer is not particularly limited and may be a known point / adhesive material such as an acrylic polymer, a silicone polymer, a rubber polymer, an ethylene vinyl acetate (EVA) polymer or an olefin polymer such as PIB (polyisobutylene) Can be formed.

An appropriate moisture barrier material may be incorporated into the adhesive layer. Hereinafter, the adhesive layer to which the moisture barrier material is blended in the present specification may be referred to as a barrier adhesive layer. As used herein, the term " moisture barrier material " may be used to mean a component capable of adsorbing or removing moisture or moisture introduced from the outside through physical or chemical reactions or the like. The specific kind of water-blocking material that can be blended in the adhesive layer is not particularly limited, and examples thereof include a metal oxide, an organic metal oxide, a metal salt, or phosphorus pentoxide (P2O5). Specific examples of the metal oxide include lithium oxide (Li2O), sodium oxide (Na2O), barium oxide (BaO), calcium oxide (CaO), magnesium oxide (MgO) (Li 2 SO 4), sodium sulphate (Na 2 SO 4), calcium sulphate (CaSO 4), magnesium sulphate (MgSO 4), cobalt sulphate (CoSO 4), gallium sulfate (Ga 2 SO 4) (NiSO4), and the like, calcium chloride (CaCl2), magnesium chloride (MgCl2), strontium chloride (SrCl2), yttrium chloride (YCl3), copper chloride (CuCl2), cesium fluoride (CsF), tantalum fluoride (NbF5), lithium bromide (LiBr), calcium bromide (CaBr2), cesium bromide (CeBr3), selenium bromide (SeBr4), vanadium bromide (VBr3), magnesium bromide (MgBr2), barium iodide (BaI2) or magnesium iodide ) And the like; Or metal chlorates such as barium perchlorate (Ba (ClO4) 2) or magnesium perchlorate (Mg (ClO4) 2), but the present invention is not limited thereto.

The adhesive layer may contain appropriate acid scattering particles, and accordingly the adhesive layer itself may exhibit an appropriate haze. The light extraction efficiency can be improved when the adhesive layer causes haze. The type of scattering particles that can be incorporated into the adhesive layer is not particularly limited and an appropriate type of scattering particles included in the scattering layer can be selected and used in consideration of the refractive index of the resin forming the adhesive layer.

Other layers that may be present in the substrate region may also be exemplified by carrier substrates that may be temporarily or permanently attached to the bottom of the substrate film. As the carrier substrate, a rigid substrate such as a glass substrate can be applied.

The substrate region may be formed in various structures. For example, the substrate region may have a structure in which a first inorganic layer and a base film are sequentially formed in a downward direction, a structure in which a buffer layer and / or a scattering layer are formed between the first inorganic layer and the base film, A structure in which a carrier film or a barrier film is attached by an adhesive layer if necessary, and the like.

The device region located above the substrate region may include a first electrode layer and a second electrode layer, and may also include an organic layer present between the first and second electrode layers. The first and second electrode layers may be a hole injecting or electron injecting electrode layer commonly used in organic electronic devices. Either one of the first and second electrode layers may be formed as a hole injecting electrode layer and the other may be formed as an electron injecting electrode layer. Either one of the first and second electrode layers may be formed as a transparent electrode layer and the other may be formed as a reflective electrode layer.

The electrode layer capable of injecting holes can be formed using, for example, a material having a relatively high work function, and can be formed using a transparent or reflective material when necessary. For example, the hole-injecting electrode layer may comprise a metal, an alloy, an electrically conductive compound or a mixture of two or more thereof having a work function of about 4.0 eV or more. As such a material, metal such as gold, CuI, indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), zinc oxide doped with aluminum or indium, magnesium indium oxide, nickel tungsten oxide, Metal oxides such as ZnO, SnO 2 or In 2 O 3, metal nitrides such as gallium nitride, metal serenides such as zinc serenide, and metal sulfides such as zinc sulfide. The transparent positive hole injecting electrode layer can also be formed by using a metal thin film of Au, Ag or Cu and a laminate of a transparent material of high refractive index such as ZnS, TiO 2 or ITO.

The hole injecting electrode layer may be formed by any means such as vapor deposition, sputtering, chemical vapor deposition or electrochemical means. In addition, the electrode layer formed according to need may be patterned through a process using known photolithography, shadow mask, or the like.

The electron injecting electrode layer can be formed using, for example, a material having a relatively small work function. For example, a transparent or reflective material suitable for forming the hole injecting electrode layer may be used However, the present invention is not limited thereto. The electron injecting electrode layer can also be formed using, for example, a vapor deposition method or a sputtering method, and can be appropriately patterned when necessary.

The thickness of the electrode layer may be formed to have a thickness of, for example, about 90 nm to 200 nm, 90 nm to 180 nm, or about 90 nm to 150 nm.

An organic layer is present between the first and second electrode layers. The organic layer may include at least two light emitting units. In such a structure, light generated in the light emitting unit can be emitted toward the transparent electrode layer through a process of being reflected by the reflective electrode layer.

The gap between the transparent electrode layer and the reflective electrode layer may be in a range of about 400 nm to about 2500 nm or about 400 nm to about 2300 nm in consideration of light extraction efficiency. The distance between one object and another object defined in the present specification may mean the shortest distance connecting the opposing faces between the two objects. The gap thus adjusted can be combined with the haze of the substrate region described above or the gap between the reflective electrode layer and the light emitting unit described later to improve the light extraction efficiency. When the light is designed to be emitted to the substrate region, the first electrode layer may be a transparent electrode layer, and the second electrode layer may be a reflective electrode layer. The improved light extraction efficiency can be realized by adjusting the haze of the substrate area and the interval between the light emitting unit and the reflective electrode layer and the spacing between the reflective electrode layer and the substrate as described above.

The organic layer may include a first light emitting unit having a first light emitting center wavelength and a second light emitting unit having a second light emitting center wavelength. The first luminescent center wavelength may be in a range different from the second luminescent center wavelength. For example, the first luminescent center wavelength may be longer than the second luminescent center wavelength. For example, the ratio (lambda 1 / lambda 2) of the first luminescent center wavelength lambda 1 and the second luminescent center wavelength lambda 2 may be in the range of 1.1 to 2. In this range, the desired color can be achieved by mixing the light emission of each light emitting unit. In another example, the ratio? 1 /? 2 may be 1.2 or more, 1.3 or more, or 1.4 or more. Further, the ratio? 1 /? 2 may be 1.9 or less or 1.85 or less in another example. The distance between each of the light emitting units and the reflective electrode layer can be adjusted in consideration of the light extraction efficiency. For example, the ratio (L1 / L2) of the distance L1 between the first light emitting unit and the reflective electrode layer (for example, the second electrode layer) and the interval L2 between the second light emitting unit and the reflective electrode layer, May be in the range of about 1.5 to 20. The ratio (L1 / L2) may be about 2 or more or about 2.5 or more in another example. In another example, the ratio (L1 / L2) may be about 15 or less. For example, an organic layer including each light emitting unit having such a controlled interval and each emission center wavelength may be formed on the substrate region having the above-described haze, so that the light extraction efficiency of the organic electronic device can be improved.

The specific range in which the emission center wavelength of each light emitting unit and the interval between the light emitting unit and the reflective electrode layer are adjusted to satisfy the above ratio is not particularly limited. For example, the first luminescent center wavelength may be within a range of about 500 to 700 nm and the second luminescent center wavelength may be within a range of about 380 to 500 nm. The distance between the first light emitting unit and the reflective electrode layer may be in the range of 150 nm to 200 nm and the interval between the second light emitting unit and the reflective electrode layer may be in the range of 20 nm to 80 nm.

An intermediate electrode layer or a charge generating layer may further be present between the first light emitting unit and the second light emitting unit for proper light emission. Therefore, the light emitting units may have a structure in which the light emitting units are divided by an intermediate electrode layer having a charge generating characteristic or a charge generating layer (CGL).

The material constituting the light emitting unit is not particularly limited. Fluorescent or phosphorescent organic materials having various luminescent center wavelengths are known in the art, and a suitable kind of such known materials can be selected to form the light emitting unit. Examples of materials for the light emitting unit include tris (4-methyl-8-quinolinolate) aluminum (III) (Alg3), 4-MAlq3 or Gaq3 (C26H26N2O2S), DSA-amine, TBSA, BTP, PAP-NPA, Spiro-FPA, Ph3Si (PhTDAOXD), PPCP (1,2,3,4,5-pentaphenyl- Cyclopentadiene), DPVBi (4,4'-bis (2,2'-diphenylyinyl) -1,1'-biphenyl), distyrylbenzene or a derivative thereof, or DCJTB (4- (Dicyanomethylene) -2-tert-butyl-6- (1,1,7,7, -tetramethylgulolidyl-9-enyl) -4Hpyran), DDP, AAAP, NPAMLI; (AcAc), BzqIr (AcAc), Bo2Ir (AcAc), F2Ir (Bpy), F2Ir (AcAc), BF2P (acac), op2Ir (acac), ppy2Ir (acac), tpy2Ir (acac), FIrppy (fac-tris [2- (4,5'-difluorophenyl) pyridine-C'2, N] iridium a phosphorescent material such as acac (bis (2- (2'-benzo [4,5-a] thienyl) pyridinato-N, C3') iridium (acetylacetonate) . The light emitting unit may include the above material as a host and may also include perylene, distyrylbiphenyl, DPT, quinacridone, rubrene, BTX, ABTX or DCJTB And a host-dopant system including the dopant as a dopant.

The light emitting unit may also be formed by appropriately employing a kind that exhibits light emission characteristics among electron-accepting organic compounds or electron-donating organic compounds described below.

The organic layer may be formed in various structures, including any of various other functional layers known in this field, as long as it includes a light emitting unit. Examples of the layer that can be included in the organic layer include an electron injecting layer, a hole blocking layer, an electron transporting layer, a hole transporting layer, and a hole injecting layer.

The electron injection layer or the electron transport layer can be formed using, for example, an electron accepting organic compound. As the electron-accepting organic compound in the above, any known compound can be used without any particular limitation. Examples of such organic compounds include polycyclic compounds or derivatives thereof such as p-terphenyl or quaterphenyl, naphthalene, tetracene, pyrene, coronene, ), Polycyclic hydrocarbon compounds or derivatives thereof such as chrysene, anthracene, diphenylanthracene, naphthacene or phenanthrene, phenanthroline, Heterocyclic compounds or derivatives thereof such as bathophenanthroline, phenanthridine, acridine, quinoline, quinoxaline, or phenazine may be exemplified. It is also possible to use at least one of fluoroceine, perylene, phthaloperylene, naphthaloperylene, perynone, phthaloferrinone, naphthoferrinone, diphenylbutadiene ( diphenylbutadiene, tetraphenylbutadiene, oxadiazole, aldazine, bisbenzoxazoline, bisstyryl, pyrazine, cyclopentadiene, and the like. Oxine, aminoquinoline, imine, diphenylethylene, vinyl anthracene, diaminocarbazole, pyrane, thiopyrane, polymethine, Quinacridone or rubrene or derivatives thereof, Japanese Patent Application Laid-Open No. 1988-295695, Japanese Patent Application Laid-Open No. 1996-22557, Japanese Patent Application Laid-Open No. 1996-81472, Japanese Patent Application Laid-Open No. 1993-009470 or Japanese Patent Application Laid- For example, tris (8-quinolinolato) aluminum, a metal chelated oxanoid compound, bis (8-quinolinolato) aluminum, Bis (benzo (f) -8-quinolinolato] zinc}, bis (2-methyl-8-quinolinolato) aluminum, Tris (8-quinolinolato) indium], tris (5-methyl-8-quinolinolato) aluminum, 8- quinolinolato lithium, tris (5- Quinolinolato) gallium, bis (5-chloro-8-quinolinolato) calcium and the like, metal complexes having at least one of 8-quinolinolato or a derivative thereof as an arbiter, Japanese Patent Laid- Oxadiazole compounds disclosed in Japanese Patent Application Laid-Open Nos. 1995-179394, 1995-278124, and 1995-228579, Stilbene derivatives, distyrylarylene derivatives, and the like disclosed in Japanese Patent Application Laid-Open (kokai) No. 1994-132080 Styryl derivatives disclosed in JP-A-1994-88072 and the like, diolefin derivatives disclosed in JP-A-1994-100857 and JP-A-1994-207170, and the like; Fluorescent brightening agents such as benzooxazole compounds, benzothiazole compounds or benzoimidazole compounds; Bis (4-methylstyryl) benzene, distyrylbenzene, 1,4-bis (2-methylstyryl) benzene, Bis (2-methylstyryl) benzene, 1,4-bis (3-ethylstyryl) benzene, Methylstyryl) -2-ethylbenzene, and the like; Bis (4-methylstyryl) pyrazine, 2,5-bis (4-methylstyryl) pyrazine, 2,5- Bis [2- (4-biphenyl) vinyl] pyrazine such as bis (4-methoxystyryl) pyrazine, 2,5-bis [2- Distyrylpyrazine compounds, 1,4-phenylenedimethylidene, 4,4'-phenylenedimethylidyne, 2,5-xylenedimethylidyne, 2,6-naphthylenedimethylidyne, 1,4-biphenylene dimethyl (9,10-anthracenediyldimethylidine) or 4,4 '- (2,2-di-t-butylphenylvinyl) biphenyl , Dimethylidine compounds such as 4,4 '- (2,2-diphenylvinyl) biphenyl and derivatives thereof, silane disclosed in Japanese Patent Application Laid-Open No. 1994-49079 or Japanese Patent Application Laid-Open No. 1994-293778 Silanamine derivatives, Japanese Patent Laid-Open Publication No. 1994-279322 or Japanese Patent Application Laid-Open No. 1994-279323 The disclosed polyfunctional styryl compounds, oxadiazole derivatives disclosed in Japanese Patent Application Laid-Open No. 1994-107648 or Japanese Patent Laid-Open Publication No. 1994-092947, anthracene compounds disclosed in Japanese Patent Application Laid-open No. 1994-206865, Oxynate derivatives disclosed in JP-A-1994-145146 and the like, tetraphenylbutadiene compounds disclosed in JP-A-1992-96990 and the like, organic trifunctional compounds disclosed in JP-A-1991-296595, Coumarin derivatives disclosed in JP-A-1990-191694 and the like, perylene derivatives disclosed in JP-A-1990-196885 and the like, naphthalene derivatives disclosed in JP-A-1990-255789, A phthaloperynone derivative disclosed in Japanese Patent Application Laid-Open No. 1990-289676 or Japanese Patent Laid-Open No. 1990-88689, -250292 and the like can also be used as an electron-accepting organic compound contained in the low refractive layer. In addition, the electron injection layer may be formed using a material such as LiF or CsF.

The hole blocking layer is a layer capable of preventing the injected holes from entering the electron injecting electrode layer through the light emitting unit to improve the lifetime and efficiency of the device. If necessary, the hole blocking layer can be formed by using a known material, It can be formed at an appropriate portion between the entering electrode layers.

The hole injecting layer or the hole transporting layer may include, for example, an electron donating organic compound. Examples of the electron donating organic compound include N, N ', N'-tetraphenyl-4,4'-diaminophenyl, N, N'- N, N ', N'-tetra-p-tolyl-4,4'-diaminobiphenyl, Phenyl, N, N'-di (4-methoxyphenyl) -4,4'-diaminobiphenyl, N, N'- (N, N ', N'-tetraphenyl-4,4'-diaminodiphenyl ether, 4,4'-bis (diphenylamino) quadriphenyl] 4-N, N-diphenylaminostilbene, N-phenylcarbazole, 1,1-bis (4-methoxy- Bis (4-dimethylamino-2-methylphenyl) phenylmethanesulfonate, 1,1-bis (4-di- N, N, N-tri (p-tolyl) amine, 4- (di-p- tolylamino) -4 ' N ', 4,4'-diaminobiphenyl N-phenylcarbazole, 4,4'-bis [N- (1-naphthyl) -N- -Bis [N- (2-naphthyl) -N-phenylamino] biphenyl, 4,4'- -Bis [N- (1-naphthyl) -N-phenylamino] naphthalene, 4,4'-bis [ Phenyl) amino] biphenyl, 4,4'-bis [N- (1-anthryl) -N-phenylamino] -p- , 4'-bis [N- (2-phenanthryl) -N-phenylamino] biphenyl, 4,4'-bis [N- (2-perylenyl) -N-phenylamino] biphenyl, 4,4'-bis [N- (2-pyrenyl) Bis [N- (1-coronenyl) -N-phenylamino] biphenyl), 2,6-bis Di-p-tolylamino) naphthalene, 2,6-bis [di- (1-naphthyl) amino] naphthalene, N, N-di (2-naphthyl) amino] terphenyl, 4,4'-bis [ -Bis [N-phenyl-N- (2-pyrenyl) amino] biphenyl, 2, N-di- (2-naphthyl) amino] fluorene or 4,4 "-bis (N, N-di-p- tolylamino) terphenyl, Naphthyl) (N-2-naphthyl) amine, and the like are exemplified, but not limited thereto.

The hole injecting layer or the hole transporting layer may be formed by dispersing an organic compound in a polymer or by using a polymer derived from the organic compound. Further, hole-transporting non-conjugated polymers such as? -Conjugated polymers and poly (N-vinylcarbazole) such as polyparaphenylenevinylene and derivatives thereof,? -Conjugated polymers of polysilanes, etc. may also be used .

The hole injection layer may be formed by using a metal phthalocyanine such as copper phthalocyanine, a nonmetal phthalocyanine, a carbon film and an electrically conductive polymer such as polyaniline, or by reacting the arylamine compound with an Lewis acid using the arylamine compound as an oxidizing agent You may.

The specific structure of the organic layer is not particularly limited. In this field, various materials for forming a hole or electron injection electrode layer and an organic layer such as a light emitting unit, an electron injecting or transporting layer, a hole injecting or transporting layer, and a forming method thereof are known. May be applied.

The upper region of the organic electronic device may include a cover film and a second inorganic layer sequentially formed in an upward direction.

The second inorganic layer exists to prevent, inhibit or alleviate permeation of the foreign substance to secure durability, and the specific material and the formation method may be similar to those mentioned in the item of the first inorganic layer. However, when the light is designed to be emitted toward the substrate region, the second inorganic layer need not be formed to have a high refractive index like the first inorganic layer.

The cover film present on the second inorganic layer is a structure for protecting the organic electronic device, for example, a well-known barrier film, a metal sheet, a conductive film, or the like, or a laminated structure of two or more of the above. In the upper region, the cover film may be attached to the upper portion of the second inorganic layer through an adhesive layer, for example, the above-described barrier adhesive layer.

There may also be one or more buffer layers, i. E. A second buffer layer, if desired. The position where the buffer layer may exist in the upper region may be exemplified between the second electrode layer and the second inorganic layer. In another example, the upper region may include a structure including two or more each of the second buffer layer and the second barrier layer, and alternately stacking the layers repeatedly. The buffer layer serves to mitigate stress (strss) generated in the structure of the upper region, to prevent the element from being pressed when the cover film is formed on the second inorganic layer, and / And the second inorganic layer can exhibit an excellent effect by providing an appropriate flat surface. The specific material and the formation method of the second buffer layer may be similar to those mentioned in the item of the first buffer layer. However, when the light is designed to be emitted toward the substrate region, the second buffer layer does not necessarily have to have a high refractive index like the first inorganic layer.

The second buffer layer may be an iCVD layer formed in the iCVD method so that the second buffer layer exhibits proper performance and exhibits a desired effect in the overall device structure.

The second buffer layer may include, for example, poly ((meth) acrylate) or organic silicon and the like.

The term poly ((meth) acrylate) may include, for example, a polymerized unit of a compound of the following general formula (3). The term polymerized unit of a certain compound means a form in which the compound is polymerized and contained in a polymer (Meth) acrylate) may be a homopolymer of a compound of the formula (3) or a copolymer containing other comonomers together with a compound of the following formula (3).

(3)

In the general formula (3), R 1 is hydrogen or an alkyl group having 1 to 4 carbon atoms, and A may be an epoxy group-containing group or an alicyclic monovalent hydrocarbon group.

Examples of the epoxy group-containing groups as mentioned above include glycidyl groups, glycidyloxy groups, glycidyl alkyl groups, glycidoxyalkyl groups and alicyclic epoxy groups. In addition, the alicyclic monovalent hydrocarbon group described above means a monovalent residue derived from a compound or a derivative of the compound, which is a compound in which carbon atoms are bonded in a ring form, which is not an aromatic compound. The alicyclic monovalent hydrocarbon group may be an alicyclic monovalent hydrocarbon group having 3 to 20 carbon atoms, 5 to 15 carbon atoms, or 5 to 12 carbon atoms, for example, an isobornyl group, a cyclohexyl group, a norbornanyl group norbornanyl group, norbornenyl group, dicyclopentadienyl group, ethynylcyclohexane group, ethynylcyclohexene group or ethynyldecahydronaphthalene group, but the present invention is not limited thereto.

On the other hand, as the organic silicon, the material described in the item of the buffer layer of the substrate region can be used.

By using the above-described material, for example, the second buffer layer formed by the iCVD method can perform a superior function in the entire device structure. The second buffer layer may be formed to have an appropriate thickness in consideration of a desired function, and may have a thickness within a range of, for example, about 200 nm to 1,000 nm or about 200 nm to 500 nm.

As described above, the organic electronic device has a complex structure of an organic layer and an inorganic layer in a structure in which an inorganic layer or the like formed in the substrate region or the upper region and an organic layer in the element region are mixed. In the structure in which the organic layer and the inorganic layer having different properties are mixed, for example, the structure may have a stress internally due to shrinkage of each layer or difference in expansion characteristics. Particularly, in a flexible device in which bending or the like is planned to be used in the course of use, the internal stress may be a major problem affecting the durability of the device.

Although it is not clear, when the respective intervals are adjusted as described above, it is determined that the neutral axis of the organic electronic device is formed at a suitable position. As used herein, the term central axis refers to an imaginary axis existing in the horizontal direction of the device, for example, when the device is convex or concave bended, tensile stress or compression It may mean the axis on which the compression stress predominates. That is, by adjusting the gap as described above, the central axis is positioned at an appropriate position, and therefore stress particularly in the apparatus is minimized during bending, and cracks, cracks, cracks, It is possible to prevent a performance deterioration which may be caused by the above-mentioned problems, and to provide a device with better durability. The gap can be adjusted, for example, by adjusting the thickness of the layer to be formed in the device.

The present application also relates to the use of said organic electronic device, for example an organic light emitting device. The organic light emitting device may be a backlight of a liquid crystal display (LCD), an illumination device, a light source such as various sensors, a printer, a copying machine, a vehicle instrument light source, a traffic light, a display, A light source, a display, a decoration, or various lights. In one example, the present application relates to a lighting device comprising the organic light-emitting device. In the case where the organic light emitting device is applied to the illumination device or other use, the other components constituting the device or the like and the constitution method of the device are not particularly limited. As long as the organic light emitting device is used, Any of the materials or methods may be employed.

In this application, an organic electronic device, for example, a flexible device, which exhibits excellent light extraction efficiency and durability, can be provided. Such an organic electronic device may be applied to a light source for illumination or a display or the like.

1 is a schematic diagram showing an exemplary organic electronic device.

101: Flexible base film
102: first inorganic layer
103: first electrode layer
104: organic layer
105: second electrode layer
106: second inorganic layer
107: Cover film

Claims (19)

A substrate region having a base film and a first inorganic layer formed on the base film; An element region having a first electrode layer, an organic layer, and a second electrode layer sequentially present on the substrate region; And an upper region having a second inorganic layer and a cover film sequentially present on the element region,
Wherein the distance B between the base film and the second electrode layer is in the range of 350 nm to 4,000 nm and the distance A between the cover film and the first electrode layer is in the range of 500 nm to 4,000 nm, (A / B) is in the range of 0.5 to 3. The organic electronic device according to claim 1, wherein the base film has a refractive index of 1.5 or more. The organic electronic device according to claim 2, wherein an absolute value of a difference in refractive index between the base film and the first inorganic layer is 1 or less. 4. The liquid crystal display device according to claim 3, wherein the first inorganic layer includes a laminated structure of a first sub-layer having a first refractive index and a second sub-layer having a second refractive index, Wherein the value is in the range of 0.1 to 1.2. 5. The organic electronic device according to claim 4, wherein the first sub-layer comprises aluminum oxide and the second sub-layer comprises titanium oxide. The organic electronic device according to claim 1, wherein the first inorganic layer includes a laminated structure of a metal layer and an organic silicon layer. 7. The organic electronic device of claim 6, wherein the organosilicon layer comprises polymerized units of a compound of formula 1 or 2, or a compound of formula 1 or 2:
[Chemical Formula 1]
R1 (R12SiO) nR1
(2)

Wherein R 1, R d and Re are each independently hydrogen, a hydroxyl group, an epoxy group, an alkoxy group or a monovalent hydrocarbon group, n is a number in the range of 1 to 10, and o is a number in the range of 3 to 10 . The organic electronic device according to claim 1, wherein the substrate region has a haze in the range of 3% to 90%. The organic electronic device according to claim 1, further comprising a buffer layer between the base film and the first inorganic layer. 10. The organic electronic device according to claim 9, wherein the buffer layer has a refractive index of 1.6 or more. The organic electronic device according to claim 1, further comprising a barrier film on a lower portion of the base film. The organic electronic device according to claim 11, wherein a ratio (C / A) of a distance (C) between the barrier film and the second electrode layer to a distance (A) between the cover film and the first electrode layer is in a range of 5 to 30. The organic electronic device according to claim 1, wherein the organic layer includes a first light emitting unit having a first luminescent center wavelength and a second light emitting unit having a second luminescent center wavelength different from the first luminescent center wavelength. The organic electronic device according to claim 13, wherein the ratio (lambda 1 / lambda 2) of the first luminescent center wavelength (lambda 1) and the second luminescent center wavelength (lambda 2) is in the range of 1.1 to 2. The organic EL device according to claim 13, wherein the ratio (L1 / L2) of the distance (L1) between the first light emitting unit and the second electrode layer to the distance (L2) between the second light emitting unit and the second electrode layer is in the range of 1.5 to 20 Electronic device. The organic electronic device according to claim 1, further comprising a buffer layer between the second electrode layer and the second inorganic layer. The organic electronic device according to claim 16, wherein the buffer layer comprises polymerized units of a compound represented by any one of the following formulas (1) to (3):
[Chemical Formula 1]
R1 (R12SiO) nR1
(2)

(3)

In the general formulas (1) to (3), R1, Rd and Re are each independently hydrogen, a hydroxyl group, an epoxy group, an alkoxy group or a monovalent hydrocarbon group, n is a number within a range of 1 to 10, o is a number within a range of 3 to 10 , R 1 is hydrogen or an alkyl group having 1 to 4 carbon atoms, and A is an epoxy group-containing group or an alicyclic monovalent hydrocarbon group. A light source for a display comprising the organic electronic device of claim 1. A lighting fixture comprising the organic electronic device of claim 1.

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