KR20120045636A - Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system - Google Patents

Abstract

PURPOSE: A light emitting device, a light emitting device manufacturing method, a light emitting device package, and a lighting system are provided to improve light extraction efficiency of the light emitting device by forming a light extraction pattern on the upper surface of a light emitting structure layer. CONSTITUTION: A light emitting structure layer(135) comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. A first electrode is connected to the first conductivity type semiconductor layer. A plurality of conductive layers is formed under the second conductivity type semiconductor layer. An insulating support member(190) is formed under the plurality of conductive layers. A protection member(140) is formed between the plurality of conductive layers and the light emitting structure layer. A part of the upper surface of the protection member is exposed to the outside of the light emitting structure layer.

Description

LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM}

The present invention relates to a light emitting device, a light emitting device manufacturing method, a light emitting device package and an illumination system.

Group III-V nitride semiconductors have been spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties. Ⅲ? Ⅴ group conductivity type semiconductor is made of a semiconductor material having a compositional formula of normal _{In x Al y Ga 1 -x- y} N (0≤≤x≤1, 0≤y≤1, 0≤x + y≤1) have.

Light emitting diodes (LEDs) are a type of semiconductor device that transmits and receives signals by converting electricity into infrared rays or light using characteristics of a compound semiconductor.

It is widely used as a light emitting device for obtaining light of a light emitting diode or a laser diode using such a conductive semiconductor material, and is applied as a light source of various products such as keypad light emitting part of a mobile phone, an electronic board, a lighting device, and the like.

The embodiment provides a light emitting device having a new structure, a method of manufacturing the same, a light emitting device package, and an illumination system.

The embodiment provides a semiconductor light emitting device having improved reliability, a method of manufacturing the same, a light emitting device package, and an illumination system.

The light emitting device according to the embodiment may include a light emitting structure layer including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; A first electrode connected on the first conductivity type semiconductor layer; A plurality of conductive layers under the second conductive semiconductor layer; An insulating support member under the plurality of conductive layers; And a protective member between the plurality of conductive layers and the light emitting structure layer, wherein a portion of the upper surface of the protective member is exposed to the outside of the light emitting structure layer.

In one embodiment, a light emitting device manufacturing method includes: forming a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a silicon growth substrate; Forming a plurality of conductive layers on the light emitting structure layer; Forming an insulating support member on the plurality of conductive layers; Separating the growth substrate to expose a first conductivity type semiconductor layer; Etching to a chip boundary region of the light emitting structure layer; Forming a protective member between the plurality of conductive layers and the light emitting structure layer; And forming a portion of the upper surface of the protective member to be exposed to the outside of the light emitting structure layer.

The embodiment provides a light emitting device having a new structure, a method of manufacturing the same, a light emitting device package, and an illumination system.

The embodiment provides a semiconductor light emitting device having improved reliability, a method of manufacturing the same, a light emitting device package, and an illumination system.

1 is a side cross-sectional view of a light emitting device according to an embodiment
2 to 10 are views showing a method of manufacturing a light emitting device according to the embodiment
11 is a side cross-sectional view of a light emitting device according to another embodiment;
12 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiment
13 illustrates a backlight unit including a light emitting device package according to embodiments.
14 is a perspective view of a lighting unit including a light emitting device package according to the embodiments.

In the description of the embodiments, each layer (film), region, pattern or structure layer is formed on or "under" the substrate, each layer (film), region, pad or pattern. In the case where it is described as "to", "on" and "under" include both "directly" or "indirectly" formed. In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device, a light emitting device package, and a lighting system according to an embodiment will be described with reference to the accompanying drawings.

1 is a side cross-sectional view of a light emitting device 100 according to an embodiment of the present invention.

Referring to FIG. 1, the light emitting device 100 according to the embodiment includes a support member 190, a second conductive semiconductor layer 130 formed on the support member 190, and the second conductive semiconductor layer 130. ) An active layer 120 formed on the active layer 120, a first conductive semiconductor layer 110 formed on the active layer 120, and a first electrode 115 formed on the first conductive semiconductor layer 110. Can be.

In addition, the protection member 140, the first conductive layer 150, the second conductive layer 160, the third conductive layer 170, and the support member 190 and the second conductive semiconductor layer 130 may be disposed between the support member 190 and the second conductive semiconductor layer 130. The fourth conductive layer 180 may be formed.

The light emitting structure layer 135 includes a first conductive semiconductor layer 110, an active layer 120, and a second conductive semiconductor layer 130, and is provided from the first and second conductive semiconductor layers 110 and 130. Electrons and holes may be recombined in the active layer 120 to generate light.

The support member 190 may include an insulating support member or a conductive support member and may support the light emitting structure layer 135. The support member 190 is an insulating material, for example, SiO ₂ , SiC, SiO _x , SiO _x N _y , TiO ₂ Or Al ₂ O ₃ To be formed of at least one material Can be formed of a material having a specific resistance of 1 * 10 ⁻⁴ dB / cm or more.

Alternatively, the support member 190 is a conductive material, for example, copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), tungsten (W), aluminum (Al), copper-tungsten (Cu-W) and a carrier wafer (eg, Si, Ge, GaAs, GaN, ZnO, SiC, SiGe, etc.) may be included.

The thickness of the support member 190 may vary depending on the design of the light emitting device 100. For example, the support member 190 may have a thickness of 50 μm to 1000 μm.

A fourth conductive layer 180 may be formed on the support member 190. The fourth conductive layer 180 is a bonding layer, and may be disposed between the support member 190 and the third conductive layer 170 to strengthen the adhesive force.

The fourth conductive layer 180 may include a barrier metal layer or a bonding metal layer, for example, Ti, Au, Sn, Ni, Cr, Ga, Nb, In, Bi, Cu, Al, Si, Ag, or Ta. It may include at least one of.

A third conductive layer 170 may be formed on the fourth conductive layer 180. A portion of the third conductive layer 170 may be formed to contact the second conductive semiconductor layer 130, and function as an electrode or a bonding pad of the second conductive semiconductor layer 130. Power may be supplied to the conductive semiconductor layer 130.

A portion of the third conductive layer 170 may be disposed to overlap with the first electrode 115 in a vertical direction, and the light emitting structure layer 135 may be disposed through the first and second conductive layers 150 and 160. ), For example, the bottom surface of the second conductivity-type semiconductor layer 130 may be physically and / or electrically contacted.

The third conductive layer 170 may include at least one of Ni, Pt, Ti, W, V, Fe, or Mo, and may be formed of a single layer or a plurality of layers.

The third conductive layer 170 may prevent the deterioration of the reliability of the device by emitting heat generated from the light emitting structure layer 135 to the outside, and may be formed to a thickness of 0.1 to 200μm. The third conductive layer 170 functions as a heat dissipation plate dissipating heat under the light emitting structure layer 135 and an electrode for supplying power. The third conductive layer 170 may be in contact with a resistance larger than that of the light emitting structure layer 135 and the ohmic layer 150.

The second conductive layer 160 may be formed on the third conductive layer 170. The second conductive layer 160 may include a reflective layer, may include a metallic material having a reflectance of 50% or more, and the reflectance may have various values according to the characteristics of the metallic material. This reflects the light incident from the light emitting structure layer 135, thereby improving the light emitting efficiency of the light emitting device 100.

For example, the second conductive layer 160 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, or Hf. . Alternatively, the metal or alloy may be formed in a multilayer using light transmitting conductive materials such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO, and specifically, IZO / Ni, AZO / Ag, and IZO. / Ag / Ni, AZO / Ag / Ni, Ag / Cu, Ag / Pd / Cu and the like can be laminated.

The first conductive layer 150 may be formed on the second conductive layer 160. The first conductive layer 150 is in ohmic contact with the second conductive semiconductor layer 130 to smoothly supply power to the light emitting structure layer 135.

The first conductive layer 150 may selectively use a light transmissive conductive layer and a metal, and may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), and indium aluminum zinc oxide (AZO). , Indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrO _x , RuO _x , RuO _x / ITO, Ni By using at least one of Ag, Pt, In, Zn or Sn can be implemented in a single layer or multiple layers.

The protection member 140 may be formed in the circumferential region of the upper surface of the third conductive layer 170. An inner portion of the protective member 140 is disposed between the third conductive layer 170 and the light emitting structure layer 135, and an outer portion thereof extends outwardly from the light emitting structure layer 135.

The protection member 140 may be in contact with the light emitting structure layer 135 and may be formed in a ring shape, a loop shape, a frame shape, and the like in the light emitting device 100.

When isolating the light emitting device, the light emitting device may be etched using a material such as Cl ₂ or BCl _2, and a part of the third conductive layer 170 formed of a metal component is melted by the etching process to melt the active layer 120. When it reaches, it can be electrically shorted. Therefore, the protection member 140 may be formed in the lower circumferential region of the light emitting structure layer 135 to improve the reliability of the device. The protection member 140 may be formed in at least a portion of the region in which the light emitting structure layer 135 is etched and the lower third conductive layer 170 is exposed.

The protection member 140 may be formed of a material having electrical insulation, a material having a lower electrical conductivity than the second conductive layer 160 or the third conductive layer 170. For example, ITO, IZO, It may include at least one of IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO _x or TiO ₂ .

The light emitting structure layer 135 may be formed on the first conductive layer 150 and the protective member 140.

The light emitting structure layer 135 may include a plurality of group III-V compound semiconductor layers. For example, the first conductive semiconductor layer 110 and the first conductive semiconductor layer 110 may be disposed under the light emitting structure layer 135. The second conductive semiconductor layer 130 may be included in the active layer 120 and under the active layer 120.

The first conductive semiconductor layer 110 is a first conductive type dopant is doped Ⅲ? A compound semiconductor of group elements Ⅴ formula is _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤ y ≦ 1, 0 ≦ x + y ≦ 1), and may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. When the first conductivity type semiconductor layer 110 is an N type semiconductor layer, the first conductivity type dopant includes an N type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductivity type semiconductor layer 110 may be formed as a single layer or a multilayer, but is not limited thereto.

An active layer 120 may be formed under the first conductivity type semiconductor layer 110. The active layer 120 may include any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure. The active layer 120 may be formed using a compound semiconductor material of a group III-V element in a cycle of a well layer and a barrier layer, for example, an InGaN well layer / GaN barrier layer or an InGaN well layer / AlGaN barrier layer. .

A conductive clad layer (not shown) may be formed on or under the active layer 120, and the conductive clad layer may be formed of an AlGaN-based semiconductor.

The second conductive type semiconductor layer 130 is formed under the active layer 120, the second conductive dopant is doped Ⅲ? A compound semiconductor of group elements Ⅴ formula is In _x Al _y Ga _{1 -x- y} N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), for example, in GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. Can be selected. When the second conductivity type semiconductor layer 130 is a P type semiconductor layer, the second conductivity type dopant may include a P type dopant such as Mg and Zn.

The light emitting structure layer 135 may include a first conductivity type semiconductor layer under the second conductivity type semiconductor layer 130. In addition, the first conductivity type semiconductor layer 110 may be a P type semiconductor layer, and the second conductivity type semiconductor layer 130 may be implemented as an N type semiconductor layer. Accordingly, the light emitting structure layer 135 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

Sides of the light emitting structure layer 135 may have an inclination by an isolation etching for dividing the plurality of chips into individual chip units.

In addition, the light extraction pattern 111 may be formed on an upper surface of the light emitting structure layer 135. The light extraction pattern 111 may improve the light extraction efficiency of the light emitting device 100 by minimizing the amount of light totally reflected from the surface.

The light extraction pattern 111 may have a random shape and arrangement, or may be formed to have a specific shape and arrangement.

For example, the light extraction pattern 111 may be formed by being arranged in a photonic crystal structure having a period of 50nm to 3000nm. The photonic crystal structure can efficiently extract light of a specific wavelength region to the outside by an interference effect or the like.

In addition, the light extraction pattern 111 may be formed to have a variety of shapes, such as a cylinder, a polygonal pillar, a cone, a polygonal pyramid, a truncated cone, a polygonal truncated cone, but is not limited thereto.

The first electrode 115 may be formed on an upper surface of the light emitting structure layer 135. The first electrode 115 may be branched in a predetermined pattern shape, but is not limited thereto.

In addition, the first electrode 115 may have at least one pad and an electrode pattern having at least one shape connected to the pads having the same or different stacked structure, but is not limited thereto.

The first electrode 115 may be formed of a metal, and may include, for example, at least one of Cr, Ni, Au, V, W, Ti, or Al, and may be formed on the first conductive semiconductor layer 110. Can supply power.

According to an embodiment, when silicon is used as a growth substrate, a light emitting structure layer including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer is laminated on the growth substrate, and the support member is bonded to the silicon substrate. When the growth substrate is separated by wet etching or the like, a crack may occur in the light emitting structure layer so that the arrangement of the light emitting structure layer may be displaced. However, when the support member is formed of an insulating material, cracks may be prevented. This improved light emitting device can be provided.

In addition, the chip separation process of separating the individual light emitting device units may be performed by a laser scribing process. In this case, when the support member is formed of a conductive material such as a metal, the burr may be melted by the heat of the laser. Although this may adversely affect the reliability of the device, if the support member is formed of an insulating material as in this embodiment, this problem can be prevented.

Hereinafter, a method of manufacturing the light emitting device 100 according to the embodiment will be described in detail. However, the description overlapping with the above description will be omitted or briefly described.

2 to 10 are views illustrating a method of manufacturing the light emitting device 100 according to the embodiment.

Referring to FIG. 2, the light emitting structure layer 135 may be formed on the growth substrate 105.

For example, the growth substrate 105 may be formed of at least one of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, or Ge, but is not limited thereto. In this embodiment, a silicon (Si) substrate is taken as an example. When silicon is used as a growth substrate, a light emitting structure layer including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer is laminated on a growth substrate, and a supporting member is bonded to the silicon growth substrate. Since it is separated by wet etching without a lift process, the growth substrate can be removed without a large impact, and thus cracks can be prevented from occurring in the light emitting structure layer. Thus, a light emitting device having improved reliability can be provided. It is inexpensive and advantageous in terms of productivity.

The light emitting structure layer 135 may include, for example, Metal Organic Chemical Vapor Deposition (MOCVD), Chemical Vapor Deposition (CVD), Plasma-Enhanced Chemical Vapor Deposition (PECVD), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), and the like may be formed using, but are not limited thereto.

Meanwhile, a buffer layer (not shown) may be formed between the first conductive semiconductor layer 110 and the growth substrate 105 to alleviate the lattice constant difference between the first conductive semiconductor layer 110 and the growth substrate 105.

Referring to FIG. 3, the protection member 140 may be formed on the chip boundary region of the light emitting device on the light emitting structure layer 135.

The protection member 140 may be formed around the individual chip area by using a patterned mask, and may be formed in a ring shape, a loop shape, a frame shape, or the like. The protective member 140 may be formed using, for example, a method such as electron beam (E-beam) deposition, sputtering, plasma enhanced chemical vapor deposition (PECVD), or the like.

Referring to FIG. 4, the first conductive layer 150 is formed on the second conductive semiconductor layer 130, and the second conductive layer 160 is formed on the first conductive layer 150. can do. The first conductive layer 150 and the second conductive layer 160 may be formed in a portion of the second conductive semiconductor layer 130, and are perpendicular to the position where the first electrode 115 is to be formed. At least a portion overlapping with each other may be formed.

The first conductive layer 150 and the second conductive layer 160 may be formed by, for example, any one of electron beam (E-beam) deposition, sputtering, and plasma enhanced chemical vapor deposition (PECVD). Can be formed.

Referring to FIG. 5, a third conductive layer 170 may be formed on the second conductive semiconductor layer 130, the protection member 140, and the second conductive layer 160. The third conductive layer 170 may be formed in a shape covering the protective member 140, the first conductive layer 150, and the second conductive layer 160, and the protective member 140 and the first conductive layer. The layer 150 and the second conductive layer 160 may be formed to contact the second conductive semiconductor layer 130 in an area where the second conductive layer 160 is not formed.

Referring to FIG. 6, a fourth conductive layer 180 may be formed on the third conductive layer 170, and a support member 190 may be formed on the fourth conductive layer 180.

The fourth conductive layer 180 may be formed between the third conductive layer 170 and the support member 190 to strengthen the adhesive force between the layers.

The support member 190 may be formed by a bonding method attached to the fourth conductive layer 180 by preparing a separate sheet, or may be formed by a deposition method, but is not limited thereto.

Referring to FIG. 7, the growth substrate 105 may be removed from the light emitting device of FIG. 6.

The growth substrate 105 may be removed by a method of etching.

As the growth substrate 105 is removed, the surface of the first conductivity type semiconductor layer 110 is exposed.

Referring to FIG. 8, the light emitting structure layer 135 is isolated by a plurality of light emitting structure layers 135 by isolation etching according to a unit chip region. The isolation etching may be performed using, for example, dry etching such as inductively coupled plasma (ICP) or wet etching using an etchant such as KOH, H ₂ SO ₄ , H ₃ PO ₄ , but is not limited thereto. Do not.

The side surface of the light emitting structure layer 135 is vertically formed in this embodiment, but may have a side surface inclined by the isolation etching. In addition, the top surface of the third conductive layer 170 may be partially exposed by the isolation etching.

A light extraction pattern 111 is formed on the top surface of the first conductivity type semiconductor layer 110. The light extraction pattern 111 may have a random shape and arrangement, or may be formed to have a specific shape and arrangement.

The light extraction pattern 111 having a random shape may be formed through a physical method such as performing wet etching on the upper surface of the light emitting structure layer 135 or polishing the surface.

The light extraction pattern 111 having a specific shape and arrangement forms a pattern mask including a pattern corresponding to the shape of the desired light extraction pattern 111 on the upper surface of the first conductivity type semiconductor layer 110, It may be formed by performing an etching process along the pattern mask.

Next, a first electrode 115 may be formed on a portion of the first conductivity type semiconductor layer 110. The first electrode 115 may be formed of a metal, and may include, for example, at least one of Cr, Ni, Au, Ti, or Al.

The first electrode 115 may be a method such as an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, or the like. It can be formed by.

Referring to FIG. 9, a passivation layer 195 may be formed on a side surface of the light emitting structure layer 135 and the first conductive semiconductor layer 110. In the present exemplary embodiment, the passivation layer 195 is formed in a portion of the first conductivity-type semiconductor layer, but may be formed in a region other than the region in which the first electrode 115 is formed. The passivation layer 195 may be formed of a material having electrical insulation and light transmittance, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O _3, or the like.

The passivation layer 195 may be formed using an electron beam (E-beam) deposition, sputtering, plasma enhanced chemical vapor deposition (PECVD), or the like.

Meanwhile, at least a portion of the light extraction pattern 111 and the passivation layer 195 may overlap each other in a vertical direction, and a region where the first electrode 115 is formed on the first conductive semiconductor layer 130. It may be formed in the region except. Accordingly, the peeling between the passivation layer 195 and the first conductivity-type semiconductor layer 110 can be prevented easily, thereby improving reliability of the light emitting device 100.

Referring to FIG. 10, the light emitting device 100 according to the embodiment may be provided by performing a chip separation process of separating the light emitting devices of FIG. 9 into individual light emitting device units.

The chip separation process includes, for example, a breaking process of separating a chip by applying a physical force using a blade, a laser scrubbing process of separating a chip by irradiating a laser to a chip boundary, and a wet or dry etching process. An etching process may be included, but is not limited thereto.

11 is a cross-sectional view of a light emitting device 100B according to another embodiment. The light emitting device 100B according to another embodiment may include a support member 190, a second conductive semiconductor layer 130, an active layer 120, and a first conductive semiconductor layer 110 formed on the support member 190. ) And the protective member 140, the first conductive layer 150, the second conductive layer 160, the third conductive layer 170 between the support member 190 and the second conductive semiconductor layer 130. It may include a fourth conductive layer 180.

Here, an upper surface of the edge side of the third conductive layer 170 may be disposed to be exposed to the outer side of the protection member 140, and an electrode may be formed or a wire may be bonded to a portion of the upper surface. An upper surface of the edge side of the third conductive layer 170 is spaced apart from the side surface of the light emitting structure layer 135.

The second electrode 131 is formed in a portion of the third conductive layer 170 exposed by the isolation etching, and is different from the light emitting device 100 of FIG. 1.

The second electrode 131 may be formed of a metal, and may include, for example, at least one of Cr, Ni, Au, V, W, Ti, or Al, and may be formed on the second conductive semiconductor layer 130. Can supply power.

The second electrode 131 may be electrically connected to the second conductive semiconductor layer 130 by a third conductive layer 170, and may supply power to the second conductive semiconductor layer 130. . Wire bonding may be facilitated by the second electrode 131.

The second electrode 131 is spaced apart from the light emitting structure layer 135 and the first and second conductive layers 150 and 160, and the power supplied to the second electrode 131 is a third conductive layer ( It may be supplied to the second conductive layer 160 and the first conductive layer 150 through 170.

The second electrode 131 may be disposed on at least one side of the side surfaces of the light emitting structure layer 135, or may be disposed to extend in at least two side surfaces with an electrode pattern.

12 is a cross-sectional view of a light emitting device package including a light emitting device according to embodiments.

Referring to FIG. 12, the light emitting device package according to the exemplary embodiments may include a body 20, a first electrode layer 31 and a second electrode layer 32 installed on the body 20, and installed on the body 20. And a light emitting device 100 according to the embodiment electrically connected to the first electrode layer 31 and the second electrode layer 32, a molding member 40 surrounding the light emitting device 100, and a first wire. 50, the second wire 52.

The body 20 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first electrode layer 31 and the second electrode layer 32 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first electrode layer 31 and the second electrode layer 32 may increase light efficiency by reflecting the light generated from the light emitting device 100, and externally generate heat generated from the light emitting device 100. May also act as a drain.

The light emitting device 100 may be installed on the body 20 or on the first electrode layer 31 or the second electrode layer 32.

The light emitting device 100 may be electrically connected to the first electrode layer 31 and the second electrode layer 32 by any one of a wire method, a flip chip method, or a die bonding method. The first wire 50 connects the first electrode layer 31 and the first electrode 115 of FIG. 1, and the second wire 52 connects the second electrode layer 32 and the third conductive layer of FIG. The upper surface of the edge side of 170 may be connected or may be connected to the second electrode 131 of FIG. 11.

The molding member 40 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 40 may include a phosphor to change the wavelength of the light emitted from the light emitting device 100.

A plurality of light emitting device packages according to embodiments may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, and the like, which are optical members, may be disposed on a path of light emitted from the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit or as a lighting unit. For example, the lighting system may include a backlight unit, a lighting unit, an indicator device, a lamp, and a street lamp.

FIG. 13 illustrates a backlight unit using a light emitting device package according to example embodiments. FIG. However, the backlight unit 1100 of FIG. 13 is an example of an illumination system, but is not limited thereto.

Referring to FIG. 13, the backlight unit 1100 includes a bottom frame 1140, an optical guide member 1120 disposed in the bottom frame 1140, and at least one side or a bottom surface of the optical guide member 1120. It may include a light emitting module 1110 disposed in. In addition, a reflective sheet 1130 may be disposed under the light guide member 1120.

The bottom frame 1140 may be formed by forming a box having an upper surface open to accommodate the light guide member 1120, the light emitting module 1110, and the reflective sheet 1130. Or it may be formed of a resin material but is not limited thereto.

The light emitting module 1110 may include a substrate and a light emitting device package according to a plurality of embodiments mounted on the substrate. The plurality of light emitting device packages may provide light to the light guide member 1120.

As shown, the light emitting module 1110 may be disposed on at least one of the inner surfaces of the bottom frame 1140, thereby providing light toward at least one side of the light guide member 1120. can do.

However, the light emitting module 1110 may be disposed under the bottom frame 1140 to provide light toward the bottom surface of the light guide member 1120, which is according to the design of the backlight unit 1100. Since various modifications are possible, the present invention is not limited thereto.

The light guide member 1120 may be disposed in the bottom frame 1140. The light guide member 1120 may guide the light provided from the light emitting module 1110 to a display panel by surface light source.

The light guide member 1120 may be, for example, a light guide panel (LGP). The light guide plate may be formed of, for example, one of an acrylic resin series such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), COC, and polyethylene naphthalate (PEN) resin.

The optical sheet 1150 may be disposed above the light guide member 1120.

The optical sheet 1150 may include at least one of, for example, a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet. For example, the optical sheet 1150 may be formed by stacking the diffusion sheet, the light collecting sheet, the luminance increasing sheet, and the fluorescent sheet. In this case, the diffusion sheet 1150 may evenly diffuse the light emitted from the light emitting module 1110, and the diffused light may be focused onto a display panel (not shown) by the light collecting sheet. In this case, the light emitted from the light collecting sheet is randomly polarized light, and the luminance increasing sheet may increase the degree of polarization of the light emitted from the light collecting sheet. The light collecting sheet may be, for example, a horizontal or / and vertical prism sheet. In addition, the luminance increase sheet may be, for example, a roughness enhancement film. In addition, the fluorescent sheet may be a translucent plate or film containing a phosphor.

The reflective sheet 1130 may be disposed under the light guide member 1120. The reflective sheet 1130 may reflect light emitted through the bottom surface of the light guide member 1120 toward the exit surface of the light guide member 1120.

The reflective sheet 1130 may be formed of a resin material having good reflectance, for example, PET, PC, PVC resin, etc., but is not limited thereto.

14 is a perspective view of a lighting unit using a light emitting device package according to the embodiments. However, the lighting unit 1200 of FIG. 14 is an example of a lighting system, but is not limited thereto.

Referring to FIG. 14, the lighting unit 1200 is installed in the case body 1210, the light emitting module 1230 installed in the case body 1210, and the case body 1210, and provides power from an external power source. It may include a receiving connection terminal 1220.

The case body 1210 is preferably formed of a material having good heat dissipation characteristics, for example, may be formed of a metal material or a resin material.

The light emitting module 1230 may include a substrate 300 and a light emitting device package 200 according to at least one embodiment mounted on the substrate 300.

The substrate 300 may have a circuit pattern printed on an insulator, and for example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like. It may include. In addition, the substrate 300 may be formed of a material that reflects light efficiently, or the surface may be formed of a color that reflects light efficiently, for example, white, silver, or the like.

The light emitting device package 200 according to the at least one embodiment may be mounted on the substrate 300. Each of the light emitting device packages 200 may include at least one light emitting diode (LED). The light emitting diodes may include colored light emitting diodes emitting red, green, blue, or white colored light, and UV light emitting diodes emitting ultraviolet (UV) light.

The light emitting module 1230 may be arranged to have a combination of various light emitting diodes in order to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI). In addition, a fluorescent sheet may be further disposed on a path of the light emitted from the light emitting module 1230, and the fluorescent sheet changes the wavelength of light emitted from the light emitting module 1230. For example, when the light emitted from the light emitting module 1230 has a blue wavelength band, the fluorescent sheet may include a yellow phosphor, and the light emitted from the light emitting module 1230 finally passes white light through the fluorescent sheet. Will be shown.

The connection terminal 1220 may be electrically connected to the light emitting module 1230 to supply power. According to FIG. 14, the connection terminal 1220 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1220 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

In the lighting system as described above, at least one of a light guide member, a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet may be disposed on a propagation path of light emitted from the light emitting module to obtain a desired optical effect.

As described above, the lighting system according to the embodiments may be improved reliability by including the light emitting device package according to the embodiments.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

Claims (9)

A light emitting structure layer including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer;
A first electrode connected on the first conductivity type semiconductor layer;
A plurality of conductive layers under the second conductive semiconductor layer;
An insulating support member under the plurality of conductive layers; And
A protective member between the plurality of conductive layers and the light emitting structure layer,
A portion of the upper surface of the protective member is exposed to the outside of the light emitting structure layer. The method of claim 1,
The plurality of conductive layers includes at least one of Ni, Pt, Ti, W, V, Fe or Mo. The method of claim 1,
A portion of the upper surface of the plurality of conductive layers is exposed to the outside of the protective member. The method of claim 3,
And a second electrode formed on a portion of an upper surface of the plurality of conductive layers and electrically connected to the second conductive semiconductor layer. The method of claim 1,
The support member is SiO ₂ , SiC, SiO _x , SiO _x N _y , TiO ₂ Or Al ₂ O ₃ Light emitting device comprising at least one of. The method of claim 1,
The thickness of the support member is a light emitting device is formed in the range of 50μm to 1000μm. The method of claim 1,
A light emitting device comprising a protective film extending from the side of the light emitting structure layer to the outside of the upper surface. Forming a light emitting structure layer including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on the silicon growth substrate;
Forming a plurality of conductive layers on the light emitting structure layer;
Forming an insulating support member on the plurality of conductive layers;
Separating the growth substrate to expose a first conductivity type semiconductor layer;
Etching to a chip boundary region of the light emitting structure layer;
Forming a protective member between the plurality of conductive layers and the light emitting structure layer; And
And forming a portion of the upper surface of the protective member so as to be exposed to the outside of the light emitting structure layer. The method of claim 8,
Exposing the second conductive semiconductor layer by separating the growth substrate, by laser scribing.

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