KR20090011625A - Ground structure, and unit for supporting substrate and apparatus for forming thin film having the same - Google Patents

Abstract

A structure of a ground capable of electrically connecting a ground terminal to a ground main body is provided to prevent a connection part from bending in an arch shape and damage of a ground terminal. A structure of a ground capable of electrically connecting a ground terminal to a ground main body comprises the following units. A ground terminal(16) is inserted from a first inlet to a second inlet of a ground main body(10). A ground connection unit(20) is inserted from the second inlet to the first inlet of the ground main body. A through-hole(12) is formed in the ground main body. The through-hole is composed of a first opening, and a second opening formed in an opposite side of the first opening.

Description

Ground structure, substrate support unit and thin film forming apparatus having the same {GROUND STRUCTURE, AND UNIT FOR SUPPORTING SUBSTRATE AND APPARATUS FOR FORMING THIN FILM HAVING THE SAME}

The present invention relates to a grounding structure, a substrate supporting unit having a same, and a thin film forming apparatus, and more particularly, to a grounding structure for grounding a ground electrode portion formed to form a thin film on a substrate, a substrate supporting unit having the same, and a thin film forming apparatus. It is about.

In general, a semiconductor device includes a Fab process for forming an electrical circuit pattern on a silicon substrate such as a wafer, and an electrical die sorting (EDS) process for inspecting electrical characteristics of the substrate on which the circuit pattern is formed. After cutting the inspected substrate to form a plurality of chips, the chips are manufactured through a packaging process of individually encapsulating the chips with an epoxy resin like a lead frame.

The circuit pattern may include forming a metal thin film on the substrate, patterning a photoresist desired by the user on the thin film, etching the thin film so as to correspond to a shape of the patterned photoresist, and patterning the patterned photoresist. It is formed, including the step of removing the photoresist.

In recent years, as a process for forming the thin film, a plasma treatment method having a low deposition rate and excellent deposition rate has been widely used. For example, the plasma treatment method may use a plasma-enhanced chemical vapor deposition (PE-CVD) apparatus.

The PE-CVD apparatus includes a process chamber into which a reaction gas is injected, a plasma electrode unit disposed in the process chamber to generate a plasma for forming a thin film from the reaction gas on the substrate, and a substrate support unit on which the substrate is substantially seated. It includes. The substrate support unit includes an embedded ground electrode portion and a ground structure electrically connected to the ground electrode portion.

The ground structure includes a ground terminal portion electrically connected to the ground electrode portion, and a ground body portion for grounding the ground terminal portion.

However, when the electrical connection between the ground terminal portion and the ground body portion is made directly inside or outside the ground body portion, an unstable connection portion is generated in part, thereby causing arcing at the connection portion. That is, the arcing forms an oxide film on the ground terminal portion, and the oxide film increases the contact resistance of the ground terminal portion to damage the ground terminal portion.

Accordingly, the present invention has been made in view of such a problem, and an object of the present invention is to provide a grounding structure that can be easily performed while preventing the occurrence of arcing during the electrical connection of the grounding terminal portion and the grounding body portion.

In addition, another object of the present invention is to provide a substrate support unit having such a grounding structure.

Further, another object of the present invention is to provide a thin film forming apparatus having the substrate support unit as described above.

In order to achieve the above object of the present invention, a grounding structure according to one aspect includes a grounding body portion and a ground connection. The ground body part includes a through hole having a first inlet and a second inlet opposite to the first inlet, and is electrically connected to a member for adjusting a voltage in a region where the substrate is placed when forming a thin film on the substrate. A ground terminal portion is inserted into the second inlet from the first inlet. The ground connection part is inserted into the first inlet from the second inlet of the ground body part and is electrically connected to the ground terminal part by an interview.

The ground body portion includes a tapered surface tapered to extend from the first inlet direction to the second inlet direction at a portion where the ground body portion is in contact with the ground terminal portion. When the ground connection part is inserted and received in the ground body part, the ground body part may be screwed or hooked with the ground body part.

The ground connection part surrounds the circumference of the ground terminal part and presses the conductive socket part and the conductive socket part inserted from the second inlet to the first inlet so as to contact the conductive socket part with the ground terminal part and the ground body part. It includes a pressing unit. Thus, the conductive socket portion may have a divided structure.

The ground connection part may further include an elastic part having an elastic force between the conductive socket part and the socket pressing part.

In order to achieve the above object of the present invention, the substrate support unit according to one feature includes a seating portion, a ground electrode portion, a ground structure portion and a ground connection portion. The seating portion is placed on a substrate for forming a thin film. The ground electrode part is built in the seating part. The ground electrode part adjusts a voltage in a region where the substrate is placed. The ground structure part may include a ground terminal part electrically connected to the ground electrode and exposed to the outside of the seating part, and a through hole having a first inlet and a second inlet opposite to the first inlet, wherein the exposed ground terminal part may be formed. And a ground body portion inserted and received from the first inlet to the second inlet. The ground connection part is inserted into the first inlet from the second inlet of the ground body part and is electrically connected to the ground terminal part by an interview.

On the other hand, the substrate support unit may further include a heating electrode unit for heating the substrate embedded in the seating portion placed on the seating portion.

In order to achieve another object of the present invention described above, a thin film forming apparatus according to an aspect includes a process chamber, a substrate support unit and a plasma electrode portion. The reaction gas is injected into the process chamber. The substrate support unit is disposed in the process chamber, and a substrate loaded from the outside is formed to form a thin film. The plasma electrode portion is disposed to face the substrate support unit in the process chamber and generates plasma from the reaction gas. Thus, the substrate support unit is mounted in the process chamber, and a seating portion on which the incoming substrate is placed, a grounding electrode portion embedded in the seating portion and regulating a voltage in a region where the substrate is placed, the grounding electrode. A ground terminal portion electrically connected to a portion and exposed to the outside of the seating portion, and a through hole having a first inlet and a second inlet opposite to the first inlet, and the exposed ground terminal portion from the first inlet; And a grounding structure including a grounding body portion inserted into and receiving the second inlet, and a ground connection portion inserted into and received from the second inlet of the grounding body portion to the first inlet and electrically connected to the grounding terminal portion.

According to such a grounding structure, a substrate support unit having the same, and a thin film forming apparatus, a ground terminal portion is first inserted into a first inlet of a through hole penetrated through the ground body, and a ground connection portion is formed at a second inlet opposite to the first inlet. After inserting the conductive socket portion, thereafter pressurizing the conductive socket portion through the socket pressing portion to interview the conductive socket portion with the ground terminal portion and the ground body portion, thereby simplifying the electrical connection of the ground terminal portion and the ground body portion. It can be performed stably.

In addition, since the size of the through hole is substantially formed without a large difference from the diameter of the ground terminal portion, the entire size of the ground structure can be configured to be small in a range that does not affect the function of the ground.

A grounding structure, a substrate support unit having the same, and a thin film forming apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the drawings, similar reference numerals are used for similar elements. In the accompanying drawings, the dimensions of the structure is shown to be larger than the actual size for clarity of the invention, or to reduce the actual size to understand the schematic configuration.

In addition, terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component.

On the other hand, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

1 is a perspective view schematically illustrating an exploded portion of a grounding structure according to an embodiment of the present invention, and FIG. 2 is a plan view viewed from above by combining the grounding structure of FIG. 1.

1 and 2, the grounding structure 100 according to an embodiment of the present invention includes a grounding body portion 10 and a ground connection portion 20.

The ground body portion 10 is substantially made of a metal material having excellent conductivity so that grounding can be made. For example, the ground body part 10 may be made of aluminum, which is lightweight, has excellent workability, and has excellent oxidation resistance, or a stainless material having excellent strength and oxidation resistance compared to material cost. The ground body portion 10 has a substantially cylindrical shape.

The ground body portion 10 includes a through hole 12 therethrough. In detail, when the ground body part 10 is disposed along the planar direction (x, y), the through hole 12 penetrates along the z direction perpendicular to the planar direction (x, y). Accordingly, the through holes 12 are formed with first and second inlets 13 and 14 respectively opposite to each other in the z direction. The ground body portion 10 accommodates a ground terminal portion 16 inserted into the second inlet 14 from the first inlet 13.

The ground terminal portion 16 is formed to be long and thin and is inserted into the first inlet 13. The ground terminal portion 16 is electrically connected to a member for adjusting a voltage in a region where the substrate is placed when forming a thin film on the substrate. Here, the member for adjusting the voltage may specifically apply a reference voltage to the region. The ground terminal part 16 may use a metal such as nickel when applying a voltage that is a reference for a high frequency voltage.

Hereinafter, the state in which the ground terminal portion 16 is inserted into the first inlet 13 of the through hole 12 will be described with reference to FIG. 3.

3 is a cross-sectional view illustrating a state in which the conductive socket part and the socket pressing part are inserted into the through hole by cutting the ground structure of FIG. 1.

Referring to FIG. 3, the first inlet 13 of the through hole 12 has a size such that the ground terminal part 16 can move only along the z direction.

On the contrary, the second inlet 14 of the through hole 12 has a larger size than the first inlet 13. In other words, the ground body portion 10 includes a tapered surface 15 which is tapered to extend from the first inlet 13 side toward the second inlet 14 in the through hole 12.

The tapered surface 15 may be formed such that an angle between the extension line extending from the first inlet 13 is about 30 degrees to about 60 degrees. This is to facilitate the sliding of the conductive socket portion 30 by the tapered surface 15.

The ground terminal portion 16 is inserted to include the tapered surface 15 at the first inlet 13. That is, the ground terminal part 16 may allow an end portion inserted into the first inlet 13 to be located between the first inlet 13 and the tapered surface 15.

The ground connection portion 20 is electrically interviewed with the ground terminal portion 16 and the ground body portion 10 inserted and inserted from the second inlet 14 into the first inlet 13. In detail, the ground connection part 20 includes a conductive socket part 30 and a socket pressing part 40.

The conductive socket part 30 is inserted into the second inlet 14 of the through hole 12. The conductive socket portion 30 is inserted while surrounding the circumference of a portion of the ground terminal portion 16 exposed from the tapered surface 15 to the second inlet 14.

The conductive socket part 30 includes a first socket 31 covering a first side of the ground terminal part 16 and a second socket 35 covering a second side opposite to the first side. . The first socket 31 includes a first inclined surface 32 facing the tapered surface 15 and a first contact surface 33 facing the ground terminal portion 16. In addition, the second socket 35, like the first socket 31, has a second inclined surface 36 facing the tapered surface 15 and a second contact surface 37 facing the ground terminal portion 16. ).

The socket pressing part 40 is additionally inserted into the second inlet 14 of the through hole 12 into which the conductive socket part 30 is inserted. The socket pressing portion 40 is inserted while pushing, i.e., pressing, behind the conductive socket portion 30 substantially. Hereinafter, a process of pressing the conductive socket part 30 by the socket pressing part 40 will be described in detail with reference to FIGS. 4 and 5.

4 is a cross-sectional view illustrating a state in which the ground structure of FIG. 3 is coupled, and FIG. 5 is an enlarged view of portion A of FIG. 4.

4 and 5, the conductive socket part 30 is electrically connected to the ground body part 10 and the ground terminal part 16 by the socket pressing part 40.

Specifically, when the first and second sockets 31 and 35 of the conductive socket part 30 are pressed by the socket pressing part 40 at the second inlet 14, firstly, the first And second inclined surfaces 32 and 36 are in close contact with the tapered surface 15.

Subsequently, when the socket pressing portion 40 continuously presses the first and second sockets 31 and 35, the taper surface 15 and the first and second inclined surfaces 32 and 36 are inclined. As a result, the first and second sockets 31 and 35 slide toward the ground terminal 16 so that the first and second contact surfaces 33 and 37 are in close contact with the ground terminal 16.

As a result, the first and second sockets 31 and 35 may be electrically connected to the tapered surface 15 and the ground terminal 16 formed on the ground body 10. The first and second sockets 31 and 35 may be made of belium (Be) or copper (Cu) material having excellent electrical conductivity, or may be made of a material (Be-Cu) thereof.

In addition, the first and second sockets 31 and 35 are connected to the first and second inclined surfaces 32 and 36 while facing the first and second contact surfaces 33 and 37, respectively. First and second opposing surfaces 34 and 38 facing the inner surface of (12).

Accordingly, the first and second opposing surfaces 34 and 38 may have a predetermined thickness with the inner surface of the through hole 12 after the socket pressing portion 40 presses the conductive socket portion 30. Spaced apart by difference.

At this time, since arcing may occur at the spaced position, it is necessary to sufficiently secure the separation distance at the position by reducing the size of the first and second sockets 31 and 35. On the contrary, since the oxide film is relatively less likely to be formed on the inner surface of the through hole 12 due to the material of the ground body part 10, the spaced distance may be close to some extent in view of this.

On the other hand, the socket pressing portion 40 which presses the first and second sockets 31 and 35 and electrically connects them to the tapered surface 15 and the ground terminal portion 16 is the second inlet 14. It is coupled to and fixed by a separate screw member 50 to the ground body portion 10 in the periphery.

That is, a part of the head of the socket pressing portion 40 inserted into the second inlet 14 is the periphery of the second inlet 14 so that screwing by the screw member 50 is performed. It has a shape protruding to the ground body portion 10.

Thus, the socket pressing portion 40 is formed with a first screw hole 42 is coupled to the screw member 50 in the protruding position, the ground body portion 10 is the first screw hole 42 The second screw hole 18 coupled with the screw member 50 is formed at a position corresponding to).

As a result, the socket pressing part 40 may press the first and second sockets 31 and 35 so as not to fall out. At this time, the screw coupling is basically made in one place, if necessary, may be made in more places if the need to increase the pressing force.

As such, the ground terminal portion 16 and the ground body portion 10 may be connected to the conductive socket portion 30 and the socket pressing portion 40 which are divided into the first and second sockets 31 and 35. The first and second sockets 31 and 35 may be electrically connected to each other, and the tapered surfaces 15 of the ground terminal portion 16 and the ground body portion 10 may be caused by the pressing of the socket pressing portion 40. By closely contacting each other, the arcing that can be generated therebetween can be prevented. Thus, by preventing damage to the ground terminal portion 16 due to the arcing, it is possible to extend the life of the ground terminal portion 16.

Meanwhile, in the present embodiment, the conductive socket part 30 is divided into two parts. However, the conductive socket part 30 may be divided into various parts such as three divisions and four divisions. That is, the conductive socket part 30 is sufficient if it has a divided structure, but is not limited thereto.

In addition, since the electrical connection between the ground terminal portion 16 and the ground body portion 10 is made in the through hole 12 formed in the ground body portion 10, a space for their electrical connection or The area can be minimized. That is, the size of the ground body portion 10 can be made small in a range that does not affect the grounding function. In other words, it is possible to prevent the ground structure 100 from growing unnecessarily due to the ground body portion 10.

On the other hand, the ground body portion 10 is formed with an exposed portion 17 for exposing a terminal for applying a heating voltage to the member for the heating, when the ground structure 100 is coupled to the member for other heating Can be.

6 is a cross-sectional view schematically showing a ground structure according to another embodiment of the present invention.

In the present embodiment, except that the elastic part is additionally included, it may be the same as the configuration of FIGS. 1, 2, 3, 4 and 5, and the same reference numerals will be used, and detailed description thereof will be omitted. .

Referring to FIG. 6, the ground connection part 20 of the ground structure 110 according to another embodiment of the present invention additionally includes an elastic part 60 inserted between the conductive socket part 30 and the socket pressing part 40. It further includes.

The elastic part 60 includes a compression spring 62 having an elastic force corresponding to the compression along the z-axis direction. In this case, the elastic part 60 further includes a guide plate 64 in order to uniformly apply the elastic force of the compression spring 62 to a position in contact with the conductive socket part 30 and the socket pressing part 40. It may include or may be formed to be flat both ends of the compression spring (62).

Therefore, when the socket pressing portion 40 presses the conductive socket portion 30, the socket pressing portion 40 is fixed to the ground body portion 10, the elastic portion 60 is the conductive The pressing force to the socket portion 30 can be further strengthened. As a result, the conductive socket part 30 may be closely contacted with the ground body part 10 and the ground terminal part 16 through the elastic part 60 to be in close contact with each other, thereby making their electrical connection more stable. .

7 is a cross-sectional view schematically showing a ground structure according to another embodiment of the present invention.

In the present embodiment, the same reference numerals are used as in FIGS. 6, 2, 3, 4, and 5, except that the socket pressing portion is coupled to the ground body. The overlapping detailed description will be omitted.

Referring to FIG. 7, the socket pressing portion 70 of the ground connection portion 25 of the ground structure 120 according to another embodiment of the present invention has a ground body portion 80 and a hook inside the through hole 82. To combine.

Specifically, the socket pressing portion 70 includes a first hook 72 protruding from the outer surface, and the ground body portion 80 is the first hook 72 and the inside of the through-hole (82) A second hook 84 recessed to be engaged.

The first hook 72 is coupled to the second hook 84 and is formed so as not to escape. On the contrary, the first hook 72 is formed so as not to interfere when the socket pressing part 70 is inserted into the through hole 82.

To this end, the first hook 72 may have an elastic force to push out of the socket pressing portion 70 in the x direction or the y direction. That is, when the socket pressing part 70 is inserted into the through hole 82, the first hook 72 enters the inside thereof, and when it meets the second hook 84, the first hook 72 is formed outward. Can be.

A plurality of first hooks 72 are formed at regular intervals on the outer surface along the planar direction (x, y) of the socket pressing part 70. Accordingly, the socket pressing portion 70 may be separated from the through hole 82 by rotating the first hook 72 to be separated from the second hook 84. A plurality of first hooks 72 may be formed at regular intervals on the outer surface of the first hook 72 to step the fixing of the socket pressing part 70. Meanwhile, the first hook 72 and the second hook 84 may have shapes opposite to each other.

As described above, the socket pressing part 70 presses the conductive socket part 30 and then hooks the ground body part 80 through the first and second hooks 72 and 84 to thereby connect the socket. The operation of fixing the pressing unit 70 can be performed more simply.

On the other hand, the present embodiment may further include the elastic portion (60 of FIG. 6) shown in Figure 6 may further enhance the force for the socket pressing portion 70 to press the conductive socket portion 30.

8 is a configuration diagram schematically illustrating a substrate support unit according to an embodiment of the present invention.

In this embodiment, the grounding structure may be the same as any of the embodiments shown in FIGS. 1, 2, 3, 4, 5, 6, and 7 and therefore uses the same reference numerals, and Duplicate detailed descriptions will be omitted.

Referring to FIG. 8, the substrate support unit 200 according to an embodiment of the present invention includes a seating portion 210, a ground electrode portion 220, and a ground structure 100.

The seating part 210 is placed on top of a substrate (w) made of a silicon material for manufacturing a semiconductor device. That is, the seating portion 210 includes a flat plate portion 212 on which the substrate w is disposed, and a protrusion portion 214 protruding in a direction opposite to the substrate w from the center of the flat plate portion 212. . The seating part 210 may be made of a ceramic material having excellent heat resistance and durability.

The ground electrode part 220 is embedded in the flat plate part 212 of the seating part 210. The ground electrode part 220 provides a reference voltage which enables the particles, which are decomposed by the high frequency voltage and then combined with the reaction gas, to be deposited on the substrate w smoothly. The high frequency voltage may be used as a means for substantially generating the plasma. The ground electrode portion 220 is electrically connected to the ground terminal portion 16 extending from the ground structure 100 through the protrusion 214. Since the ground terminal portion 16 is configured substantially the same as the ground body portion (10 in FIG. 1) of the ground structure 100, they can be regarded as one ground structure.

The substrate support unit 200 further includes a heating electrode 230 for substantially heating the seating portion 210 and a heating terminal 240 for applying a heating voltage to the heating electrode 240. It may include.

The heating electrode 230 is embedded in the flat plate 212 of the seating portion 210. The heating electrode 230 may substantially heat the seating portion 210 and may include a heating element such as a nichrome wire.

The heat generating terminal part 240 is electrically connected to the heat generating electrode part 230, and then electrically connected to an external power supply unit (not shown) via the protrusion 214 and the ground structure 100. The heat generating terminal part 240 includes two terminals for connecting the positive electrode and the negative electrode.

As such, the substrate support unit 200 includes the grounding structure 100 that stabilizes the electrical connection to prevent the occurrence of arcing, thereby lowering the failure rate so that the operator can be more easily maintained. .

9 is a schematic view showing a thin film forming apparatus according to an embodiment of the present invention.

In the present embodiment, since the substrate support unit may be the same as the configuration of FIG. 8, the same reference numerals will be used, and detailed description thereof will be omitted.

Referring to FIG. 9, the thin film forming apparatus 1000 according to the exemplary embodiment includes a process chamber 300, a substrate support unit 200, and a plasma electrode part 400.

The process chamber 300 includes a gas injection unit 310 into which a reaction gas is injected. Examples of the reaction gas include argon (Ar) gas which is an inert gas. In addition, a source gas is additionally injected into the process chamber 300 through the gas injection unit 310 or through another inlet. The source gas SG may be a gas in which one or more of silane (SiH 4), nitrogen (NO 2), or ammonia (NH 3) is mixed.

The substrate support unit 200 is seated in the process chamber 300, and the ground structure 100 coupled thereto is exposed to the outside of the process chamber 300. The substrate support unit 200 heats the substrate w to smoothly form a thin film on the substrate w carried in from the outside.

The plasma electrode part 400 is disposed in the process chamber 300 to face the substrate support unit 200 to generate plasma from the reaction gas. The plasma may react with the source gas to generate particles for substantially forming the thin film. The plasma electrode part 400 is electrically connected to an external high frequency power source RF. The plasma electrode part 400 is applied with a high frequency voltage for generating the plasma.

The thin film forming apparatus 1000 may further include a gas injection unit 500 between the substrate supporting unit 200 and the plasma electrode unit 400. The gas injector 500 may uniformly inject the reaction gas and the source gas onto the substrate w to form the thin film having a uniform thickness according to a position. The gas injection unit 500 may be, for example, a shower head.

As described above, the thin film forming apparatus 1000 can efficiently advance the process of forming a thin film on the substrate w by using the substrate supporting unit 200 having a low failure rate and easy maintenance. The thin film forming apparatus 1000 may be a PE-CVD apparatus.

Although the detailed description of the present invention has been described with reference to the preferred embodiments of the present invention, those skilled in the art or those skilled in the art will have the idea of the present invention described in the claims to be described later. It will be understood that various modifications and variations can be made in the present invention without departing from the scope of the present invention.

1 is a schematic perspective view illustrating an exploded grounding structure according to an embodiment of the present invention.

FIG. 2 is a plan view from above combining the ground structure of FIG. 1. FIG.

3 is a cross-sectional view illustrating a state in which the conductive socket part and the socket pressing part are inserted into the through hole by cutting the ground structure of FIG. 1.

4 is a cross-sectional view illustrating a state in which the ground structure of FIG. 3 is coupled.

5 is an enlarged view of a portion A of FIG. 4.

6 is a cross-sectional view schematically showing a ground structure according to another embodiment of the present invention.

7 is a schematic cross-sectional view of a ground structure according to another embodiment of the present invention.

8 is a schematic diagram illustrating a substrate support unit according to an embodiment of the present invention.

9 is a schematic diagram illustrating a thin film forming apparatus according to an embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

10: ground body portion 12: through hole

15: tapered surface 16: ground terminal

20: ground connection portion 30: conductive socket portion

31: first socket 35: second socket

40: socket pressing portion 60: elastic portion

100: ground structure 150: ground terminal

200: substrate support unit 210: mounting portion

220: ground electrode portion 300: process chamber

400 plasma electrode portion 500 plasma injection portion

1000: thin film forming apparatus

Claims (9)

A grounding hole having a first inlet and a through-hole having a second inlet opposite the first inlet, the ground terminal being electrically connected to a member for adjusting voltage in a region where the substrate is placed when forming a thin film on the substrate; A ground body portion for receiving and inserting from a first inlet to the second inlet; And And a ground connection part inserted into and received from the second inlet of the ground body part to the first inlet and electrically connected to the ground terminal part. The grounding structure of claim 1, wherein the grounding body portion includes a tapered surface that extends from the first inlet direction to the second inlet direction at a portion where the ground body portion is in contact with the ground terminal portion. The ground structure as claimed in claim 1, wherein the ground connection portion is screwed or hooked with the ground body portion when the ground connection portion is inserted into the ground body portion. The method of claim 1, wherein the ground connection portion A conductive socket part inserted into the first inlet from the second inlet while surrounding the ground terminal part; And And a socket pressing portion pressurizing the conductive socket portion to interview the conductive socket portion with the ground terminal portion and the ground body portion. The ground structure as claimed in claim 4, wherein the conductive socket portion has a divided structure. The grounding structure of claim 4, wherein the ground connection part further comprises an elastic part having an elastic force between the conductive socket part and the socket pressing part. A mounting portion on which a substrate for forming a thin film is placed; A ground electrode part embedded in the seating part and configured to adjust a voltage in a region where the substrate is placed; A ground terminal portion electrically connected to the ground electrode and exposed to the outside of the seating portion, and a through hole having a first inlet and a second inlet opposite to the first inlet; and the exposed ground terminal portion from the first inlet. A grounding structure including a grounding body portion inserted into and receiving the second inlet; And And a ground connection portion inserted into and received from the second inlet of the ground body portion to the first inlet and electrically connected to the ground terminal portion. 8. The substrate supporting unit according to claim 7, further comprising a heating electrode part for heating a substrate embedded in the seating portion and placed on the seating portion. A process chamber into which the reactive gas is injected; A substrate support unit disposed in the process chamber and on which a substrate to be loaded from outside to form a thin film is seated; And A plasma electrode disposed in the process chamber so as to face the substrate support unit and generating plasma from the reaction gas, The substrate support unit A seating part seated in the process chamber and on which the substrate to be loaded is placed; A ground electrode part embedded in the seating part and configured to adjust a voltage in a region where the substrate is placed; A ground terminal part electrically connected to the ground electrode part and exposed to the outside of the seating part, and a through hole having a first inlet and a second inlet opposite to the first inlet, and the exposed ground terminal part being the first inlet. A grounding structure including a grounding body portion inserted into and receiving from the second inlet; And And a ground connection part inserted into and received from the second inlet of the ground body part to the first inlet and electrically connected to the ground terminal part.

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