KR101415550B1 - Ground structure, and unit for supporting substrate and apparatus for forming thin film having the same - Google Patents

Abstract

The grounding structure includes a grounding body portion and a grounding connection. The grounding body portion includes a through hole having a first inlet and a second inlet opposite to the first inlet, and a ground terminal portion electrically connected to a member for adjusting a voltage in an area where the substrate is placed when the thin film is formed on the substrate From the first inlet to the second inlet. The ground connection part is inserted into the first inlet from the second inlet of the grounding body part, and is electrically connected to the grounding terminal part in an interview. Therefore, it is possible to ground easily and stably without damaging the ground terminal portion.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a ground structure, a substrate supporting unit having the ground structure,

The present invention relates to a ground structure, a substrate supporting unit and a thin film forming apparatus having the same, and more particularly, to a ground structure for grounding a ground electrode formed for forming a thin film on a substrate, .

In general, a semiconductor device includes a Fab process for forming an electrical circuit pattern on a silicon substrate such as a wafer, an electrical dicing (EDS) process for inspecting electrical characteristics of the substrate on which the circuit pattern is formed, , Cutting the inspected substrate to form a plurality of chips, and then sealing the chips with an epoxy resin such as a lead frame.

Wherein the circuit pattern includes a step of forming a metal thin film on the substrate, a step of patterning a photoresist desired by the user on the thin film, a step of etching the thin film to correspond to the shape of the patterned photoresist, A step of removing the photoresist that has been removed from the photoresist, and the like.

In recent years, as a process of forming the thin film, a plasma processing method which is thin at a low temperature and has a high deposition rate is widely used. As the plasma processing method, a plasma enhanced chemical vapor deposition (PE-CVD) apparatus may be used.

The PE-CVD apparatus includes a process chamber into which a reactive gas is injected, a plasma electrode disposed in the process chamber to generate a plasma for forming a thin film on the substrate from the reactive gas, and a substrate support unit . The substrate support unit includes a built-in ground electrode portion and a ground structure electrically connected to the ground electrode portion.

The ground structure includes a ground terminal portion electrically connected to the ground electrode portion, and a grounding body portion for grounding the ground terminal portion.

However, when the grounding terminal portion and the grounding body portion are electrically connected to each other directly inside or outside the grounding body portion, an unstable connecting portion is generated in a part of the grounding body portion, so that arcing occurs at the connecting portion. That is, the arcing forms an oxide film on the ground terminal portion, and the oxide film increases the contact resistance of the ground terminal portion, thereby damaging the ground terminal portion.

SUMMARY OF THE INVENTION Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and it is an object of the present invention to provide a ground structure that can be easily carried out while preventing arcing when the ground terminal portion and the grounding body are electrically connected.

Another object of the present invention is to provide a substrate supporting unit having such a grounding structure.

It is still another object of the present invention to provide a thin film forming apparatus having such a substrate supporting unit.

According to an aspect of the present invention, a grounding structure includes a grounding body portion and a grounding connection portion. The grounding body includes a through hole having a first inlet and a second inlet opposite the first inlet and electrically connected to a member for adjusting a voltage in an area where the substrate is placed when forming a thin film on the substrate And the ground terminal portion is inserted from the first inlet to the second inlet. The ground connection part is inserted into the first inlet from the second inlet of the grounding body part, and is electrically connected to the grounding terminal part in an interview.

The grounding body portion includes a tapered surface tapered so as to be widened from the first inlet direction to the second inlet direction at a portion where the ground terminal portion is in contact with the ground terminal portion. The ground connection part may be screwed or hooked to the grounding body part when the grounding connection part is inserted into the grounding body part.

Wherein the ground connection portion includes a conductive socket portion that surrounds the periphery of the ground terminal portion and is inserted into the first inlet from the second inlet portion and a socket portion that presses the conductive socket portion to face the ground terminal portion and the grounding body portion, And a pressing portion. Accordingly, the conductive socket portion may have a structure of being divided.

The ground connection portion may further include an elastic portion having an elastic force between the conductive socket portion and the socket pressing portion.

According to another aspect of the present invention, there is provided a substrate supporting unit including a mounting part, a ground electrode part, a grounding part, and a grounding part. The mounting part is provided with a substrate for forming a thin film. The ground electrode part is embedded in the seating part. The ground electrode portion adjusts a voltage to an area where the substrate is placed. Wherein the ground structure part includes a ground terminal part electrically connected to the ground electrode and exposed to the outside of the seating part, and a through hole having a first inlet and a second inlet opposite to the first inlet, And a grounding body portion which is inserted and received from the first inlet to the second inlet. The ground connection part is inserted into the first inlet from the second inlet of the grounding body part, and is electrically connected to the grounding terminal part in an interview.

The substrate supporting unit may further include a heating electrode unit built in the seating unit to heat the substrate placed on the seating unit.

According to another aspect of the present invention, there is provided a thin film forming apparatus including a process chamber, a substrate supporting unit, and a plasma electrode. A reaction gas is injected into the process chamber. The substrate supporting unit is disposed in the process chamber, and a substrate to be brought in from the outside is seated to form a thin film. The plasma electrode portion is arranged to face the substrate supporting unit in the process chamber, and generates a plasma from the reactive gas. The substrate supporting unit includes: a seating part that is seated inside the process chamber and on which the substrate to be loaded is placed; a ground electrode part that is embedded in the seating part and adjusts a voltage in an area where the substrate is placed; And a through hole having a first inlet and a second inlet opposite to the first inlet, the ground terminal portion being electrically connected to the first inlet and the second inlet, 2 inlet; and a ground connection portion inserted into the first inlet from the second inlet of the grounding body portion and electrically connected to the grounding terminal portion and electrically connected to the grounding body portion.

According to such a grounding structure, a substrate supporting unit and a thin film forming apparatus having such a grounding structure, a grounding terminal portion is firstly inserted into a first inlet of a through hole passing through a grounding body portion, The electrical connection between the ground terminal portion and the grounding body portion can be made simple by inserting the conductive socket portion and then pressing the conductive socket portion through the socket pressing portion after the insertion of the conductive socket portion to face the grounding terminal portion and the grounding body portion, Can be performed stably.

Further, since the size of the through-hole is substantially the same as the diameter of the ground terminal portion, the total size of the ground structure can be made small within a range that does not affect the function of the ground.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A ground structure, a substrate supporting unit and a thin film forming apparatus according to embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing. In the accompanying drawings, the dimensions of the structures are enlarged to illustrate the present invention, and are actually shown in a smaller scale than the actual dimensions in order to understand the schematic structure.

Also, the terms first and second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

Unless defined otherwise, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

FIG. 1 is a perspective view schematically illustrating a ground structure according to an embodiment of the present invention. FIG. 2 is a plan view of the ground structure shown in FIG.

Referring to FIGS. 1 and 2, a ground structure 100 according to an embodiment of the present invention includes a grounding body 10 and a grounding connection 20.

The grounding body 10 is made of a metal material having excellent conductivity so that the grounding body 10 can be grounded. For example, the grounding body 10 may be made of aluminum, which is lightweight, excellent in workability and excellent in oxidation resistance, or made of stainless steel, which is superior in strength and oxidation resistance to a material cost. The grounding body portion 10 has a substantially cylindrical shape.

The grounding body portion 10 includes a through hole 12 penetrating therethrough. Specifically, the through hole 12 penetrates along the z direction perpendicular to the planar direction (x, y) when the grounding body portion 10 is disposed along the planar direction (x, y). Accordingly, the through-holes 12 are formed with first and second inlets 13 and 14, respectively, opposite to each other along the z direction. The grounding body portion 10 receives a grounding terminal portion 16 which is inserted into the second inlet 14 from the first inlet 13.

The ground terminal portion 16 is elongated and inserted into the first inlet 13. The ground terminal portion 16 is electrically connected to a member for adjusting a voltage in an area where the substrate is placed when forming a thin film on the substrate. Here, the member for adjusting the voltage may specifically apply a reference voltage to the region. The ground terminal portion 16 may use a metal such as nickel when applying a voltage which is a reference for a high frequency voltage.

Hereinafter, a state in which the ground terminal portion 16 is inserted into the first inlet 13 of the through hole 12 will be described with reference to FIG.

3 is a cross-sectional view showing a state in which the grounding structure of FIG. 1 is cut and the conductive socket portion and the socket pressing portion are inserted into the through-hole.

3, the first inlet 13 of the through-hole 12 has a size such that the ground terminal portion 16 can move only along the z-direction.

In contrast, the second inlet 14 of the through-hole 12 is formed in a larger size than the first inlet 13. In other words, the grounding body portion 10 includes a tapered surface 15 formed inside the through-hole 12 so as to be tapered so as to be widened from the first inlet 13 side toward the second inlet 14 side.

The tapered surface 15 may be formed to have an angle of about 30 degrees to about 60 degrees with an extension extending from the first inlet 13. This is to facilitate the sliding of the conductive socket portion 30 by the tapered surface 15.

The ground terminal portion 16 is inserted to include the tapered surface 15 at the first inlet 13. That is, the ground terminal portion 16 may have an end portion inserted into the first inlet 13 positioned between the first inlet 13 and the tapered surface 15.

The ground connection portion 20 electrically insulates the ground terminal portion 16 inserted into the first inlet 13 from the second inlet 14 and the grounding body portion 10. Specifically, the ground connection portion 20 includes a conductive socket portion 30 and a socket pressing portion 40.

The conductive socket portion 30 is inserted into the second inlet 14 of the through hole 12. The conductive socket portion 30 is inserted while surrounding the portion of the ground terminal portion 16 exposed from the tapered surface 15 to the second inlet 14.

The conductive socket portion 30 includes a first socket 31 covering the first side of the ground terminal portion 16 and a second socket 35 covering the second side opposite to the first side . The first socket 31 includes a first inclined surface 32 facing the tapered surface 15 and a first contact surface 33 facing the ground terminal portion 16. Like the first socket 31, the second socket 35 includes a second inclined surface 36 facing the tapered surface 15 and a second contact surface 37 facing the ground terminal portion 16 ).

The socket pressing portion 40 is further inserted into the second inlet 14 of the through hole 12 into which the conductive socket portion 30 is inserted. The socket pressing portion 40 is inserted substantially while pushing back, i.e., pressing, the conductive socket portion 30. Hereinafter, the process of pressing the socket 30 by the socket pressing portion 40 will be described in detail with reference to FIGS. 4 and 5. FIG.

Fig. 4 is a cross-sectional view showing a state where the grounding structure of Fig. 3 is coupled, and Fig. 5 is an enlarged view of a portion A of Fig.

4 and 5, the conductive socket portion 30 is electrically connected to the grounding body portion 10 and the grounding terminal portion 16 by the socket pressing portion 40 while being interviewed.

The first and second sockets 31 and 35 of the conductive socket unit 30 are first pressed by the socket pressurizing unit 40 at the second inlet 14, And the second inclined surfaces (32, 36) are in close contact with the tapered surface (15) while being in contact with each other.

When the socket pressing portion 40 continuously presses the first and second sockets 31 and 35, the tapered surface 15 and the inclined surfaces of the first and second inclined surfaces 32 and 36 The first and second sockets 31 and 35 are slid toward the ground terminal portion 16 so that the first and second contact surfaces 33 and 37 are in close contact with the ground terminal portion 16 while being in contact with each other.

The first and second sockets 31 and 35 may be electrically connected to the tapered surface 15 and the ground terminal 16 of the grounding body 10 while being in contact therewith. The first and second sockets 31 and 35 may be made of a material having a high electrical conductivity such as Be or Cu or a material of Be-Cu.

The first and second sockets 31 and 35 are connected to the first and second inclined surfaces 32 and 36 while facing the first and second contact surfaces 33 and 37, (34, 38) facing the inner surface of the base (12).

The first and second opposed surfaces 34 and 38 are formed so that the socket pressing portion 40 presses the conductive socket portion 30 and then contacts the inner surface of the through hole 12 The difference is separated.

At this time, since the arcing may occur at the spaced apart positions, it is necessary to reduce the sizes of the first and second sockets 31 and 35 to secure a sufficient separation distance from the position. On the contrary, the possibility that the oxide film is formed on the inner surface of the through hole 12 due to the material of the grounding body portion 10 is relatively small, so that the spaced distance may be somewhat close to this.

The socket pressing portion 40 which presses the first and second sockets 31 and 35 and electrically connects the tapered surface 15 and the ground terminal portion 16 to the second inlet 14 And is fixedly coupled to the grounding body 10 by a separate screw member 50 around the grounding body 10.

That is, a part of the head portion of the socket pressing portion 40 inserted into the second inlet 14 is screwed to the second inlet 14 to be threaded by the screw member 50, And has a shape protruding from the grounding body portion 10.

The socket pressing portion 40 is formed with a first screw hole 42 to which the screw member 50 is coupled at the projected position and the ground body portion 10 is connected to the first screw hole 42 A second screw hole 18 is formed at a position corresponding to the screw member 50 to be engaged with the screw member 50.

Thereby, the socket pressing portion 40 can prevent the socket pressing portion 40 from being pushed out after pushing the first and second sockets 31 and 35. At this time, the screw connection is made at one place, and if it is necessary to increase the pressing force in some cases, the screwing may be performed at more points.

The ground terminal portion 16 and the grounding body 10 are electrically connected to the conductive socket portion 30 and the socket pressing portion 40 divided into the first and second sockets 31 and 35, Not only the first and second sockets 31 and 35 are electrically connected to the tapered surface 15 of the grounding body portion 16 and the grounding body portion 10 by the pressure of the socket pressing portion 40, ), It is possible to prevent arcing which may occur therebetween. Thus, by preventing the ground terminal portion 16 from being damaged by the arcing, the life of the ground terminal portion 16 can be prolonged.

Meanwhile, although the conductive socket unit 30 is described as being divided in the present embodiment, the conductive socket unit 30 may be divided into various parts such as a ternary and a quadrant. That is, the conductive socket unit 30 may have a divided structure, and the present invention is not limited thereto.

Since the electrical connection between the ground terminal portion 16 and the grounding body 10 is made in the through hole 12 formed in the grounding body 10, The area can be minimized. That is, the size of the grounding body 10 can be reduced within a range that does not affect the grounding function. In other words, it is possible to prevent the grounding structure 100 from unnecessarily enlarging due to the grounding body portion 10. [

In the meantime, when the grounding structure 100 is coupled with another heating member, an exposed portion 17 for exposing a terminal for applying a heating voltage to the heating member is formed in the grounding body portion 10 .

6 is a cross-sectional view schematically showing a ground structure according to another embodiment of the present invention.

1, 2, 3, 4, and 5 except that the elastic portion is additionally included in the present embodiment, the same reference numerals are used, and redundant detailed description thereof will be omitted .

6, the ground connection 20 of the ground structure 110 according to another embodiment of the present invention further includes an elastic portion 60 inserted between the conductive socket portion 30 and the socket pressing portion 40, .

The elastic portion 60 includes a compression spring 62 having an elastic force corresponding to the compression along the z-axis direction. In this case, the elastic portion 60 is provided with a guide plate 64 for uniformly applying the elastic force of the compression spring 62 to a position where the elastic contact portion 60 contacts the conductive socket portion 30 and the socket pressing portion 40 Or both ends of the compression spring 62 may be formed flat.

Therefore, when the socket pressing portion 40 presses the conductive socket portion 30, the socket pressing portion 40 is fixed to the grounding body portion 10, It is possible to further strengthen the force of pressing the socket portion 30. As a result, the conductive socket portion 30 is more tightly contacted with the grounding body portion 10 and the grounding terminal portion 16 through the elastic portion 60, so that their electrical connection can be more stable .

7 is a cross-sectional view schematically showing a ground structure according to another embodiment of the present invention.

This embodiment can be the same as the configuration of Figs. 1, 2, 3, 4, and 5 as in Fig. 6, except that the socket pressurizing portion is coupled to the grounding body portion. And a detailed description thereof will be omitted.

7, the socket pressing portion 70 of the ground connection portion 25 of the grounding structure 120 according to another embodiment of the present invention includes the grounding body portion 80 and the hook portion 80, .

Specifically, the socket pressing portion 70 includes a first hook 72 protruding from an outer surface thereof, and the grounding body portion 80 is formed on the inner side of the through hole 82 with the first hook 72 And a second hook 84 recessed to engage.

The first hook 72 is coupled to the second hook 84 and is formed so as not to come out. Conversely, the first hook 72 is formed so as not to interfere when the socket pressing portion 70 is inserted into the through hole 82.

To this end, the first hook 72 may have an elastic force to be pushed out of the socket pressing portion 70 along the x direction or the y direction. That is, when the socket pressing portion 70 is inserted into the through hole 82, the first hook 72 enters the inside thereof, and when the second hook 84 meets the second hook 84, .

The first hooks 72 are formed at regular intervals on the outer surface of the socket pressing portion 70 along the plane direction (x, y). Thus, the socket pressing portion 70 can be separated from the through hole 82 by rotating the first hook 72 to be disengaged from the second hook 84. A plurality of first hooks 72 may be formed at regular intervals on the outer surface of the first hook 72 along the z direction so that the fixing of the socket pressing portion 70 can be stepped. Meanwhile, the first hook 72 and the second hook 84 may have opposite shapes.

As such, the socket pressing portion 70 presses the conductive socket portion 30 and then hooks the ground body portion 80 and the first and second hooks 72 and 84, The operation of fixing the pressing portion 70 can be performed more simply.

6 may further include the elastic portion 60 shown in FIG. 6 to further reinforce the pressing force of the socket pressing portion 70 against the conductive socket portion 30. As shown in FIG.

8 is a schematic view showing a substrate supporting unit according to an embodiment of the present invention.

In this embodiment, the ground structure may be the same as any of the embodiments shown in Figs. 1, 2, 3, 4, 5, 6 and 7, A detailed description will be omitted.

Referring to FIG. 8, a substrate supporting unit 200 according to an embodiment of the present invention includes a seating part 210, a ground electrode part 220, and a grounding structure 100.

The seating part 210 is loaded with a substrate w made of silicon for manufacturing a semiconductor device. That is, the seating part 210 includes a flat plate part 212 on which the substrate w is disposed and a protruding part 214 protruding from the center of the flat plate part 212 in a direction opposite to the substrate w . The seating part 210 may be made of a ceramic material having excellent heat resistance and durability.

The ground electrode part 220 is embedded in the flat plate part 212 of the seating part 210. The ground electrode unit 220 provides a reference voltage that allows particles bonded to the reaction gas to be smoothly deposited on the substrate w after being decomposed by a high frequency voltage. The high frequency voltage can be used substantially as a means for generating a plasma. The ground electrode unit 220 is electrically connected to the ground terminal unit 16 extending from the ground structure 100 via the protrusion 214. The ground terminal portion 16 is substantially identical to the grounding body portion 10 of the grounding structure 100 (Fig. 1) at all times, so that they can be regarded as one grounding structure portion.

The substrate supporting unit 200 includes a heating electrode unit 230 for substantially heating the seating unit 210 and a heating terminal 240 for applying a heating voltage to the heating electrode unit 240 .

The heating electrode part 230 is embedded in the flat plate part 212 of the seating part 210. The heating electrode unit 230 substantially heats the seating unit 210 and may include a heating element such as a nichrome wire.

The heating terminal unit 240 is electrically connected to the heating electrode unit 230 and then electrically connected to an external power supply unit (not shown) through the protrusion 214 and the grounding structure 100. The heating terminal 240 includes two terminals for connecting the anode and the cathode.

As described above, the substrate supporting unit 200 includes the grounding structure 100 that stably prevents electrical arcing and prevents arcing, thereby reducing the failure rate and allowing the operator to more easily maintain and manage the apparatus .

9 is a schematic view showing a thin film forming apparatus according to an embodiment of the present invention.

In this embodiment, the substrate support unit may be the same as that of Fig. 8, and thus the same reference numerals are used, and redundant detailed description thereof will be omitted.

Referring to FIG. 9, a thin film forming apparatus 1000 according to an embodiment of the present invention includes a process chamber 300, a substrate supporting unit 200, and a plasma electrode unit 400.

The process chamber 300 includes a gas injection unit 310 into which a reactive gas is injected. The reactive gas may be argon (Ar) gas, which is an inert gas. Further, a source gas is additionally injected into the process chamber 300 through the gas injection unit 310 or another separate inlet. The source gas SG may be a gas mixed with at least one of silane (SiH 4), nitrogen (NO 2), and ammonia (NH 3).

The substrate support unit 200 is seated in the process chamber 300 and the ground structure 100 coupled thereto is exposed to the outside of the process chamber 300. The substrate supporting unit 200 heats the substrate w so that a thin film is smoothly formed on the substrate w carried from the outside.

The plasma electrode unit 400 is disposed in the process chamber 300 to face the substrate support unit 200 to generate a plasma from the reactive gas. The plasma may react with the source gas to produce particles for substantially forming the thin film. The plasma electrode unit 400 is electrically connected to an external RF power source RF. A high frequency voltage for generating the plasma is applied to the plasma electrode unit 400.

The thin film forming apparatus 1000 may further include a gas injecting unit 500 between the substrate supporting unit 200 and the plasma electrode unit 400. The gas injector 500 may uniformly inject the reactive gas and the source gas to the substrate w to form the thin film having a uniform thickness according to the position. The gas injector 500 may be, for example, a shower head.

As described above, the thin film forming apparatus 1000 can efficiently advance the step of forming the thin film on the substrate w by using the substrate supporting unit 200 having a low failure rate and easy maintenance. The thin film forming apparatus 1000 may be a PE-CVD apparatus.

While the present invention has been described in connection with what is presently considered to be practical and exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

1 is a schematic perspective view of a ground structure according to an embodiment of the present invention.

2 is a top plan view of the ground structure of FIG.

3 is a cross-sectional view showing a state in which the grounding structure of FIG. 1 is cut and the conductive socket portion and the socket pressing portion are inserted into the through-hole.

4 is a cross-sectional view illustrating a state where the grounding structure of FIG. 3 is coupled.

5 is an enlarged view of a portion A in Fig.

6 is a cross-sectional view schematically showing a ground structure according to another embodiment of the present invention.

7 is a schematic cross-sectional view of a ground structure according to another embodiment of the present invention.

8 is a schematic diagram showing a substrate supporting unit according to an embodiment of the present invention.

FIG. 9 is a schematic structural view showing a thin film forming apparatus according to an embodiment of the present invention.

Description of the Related Art

10: grounding body part 12: through hole

15: tapered surface 16: ground terminal portion

20: ground connection part 30: conductive socket part

31: first socket 35: second socket

40: socket pressing portion 60: elastic portion

100: ground structure 150: ground terminal

200: substrate supporting unit 210:

220: ground electrode part 300: process chamber

400: Plasma electrode part 500: Plasma spray part

1000: Thin film forming apparatus

Claims (9)

A ground terminal portion electrically connected to a member for adjusting a voltage in an area where the substrate is placed when the thin film is formed on the substrate, the ground terminal portion including a first inlet and a second inlet on the opposite side of the first inlet, A grounding body portion inserted into the second inlet from the first inlet; And And a ground connection portion inserted into the first inlet from the second inlet of the grounding body portion and electrically connected to the grounding terminal portion to be electrically connected to the grounding terminal portion, Wherein the ground connection portion includes a conductive socket portion that surrounds the ground terminal portion and is inserted from the second inlet to the first inlet; And a socket pressing portion for pressing the conductive socket portion to make the conductive socket portion face the ground terminal portion and the grounding body portion. The ground structure according to claim 1, wherein the grounding body portion includes a tapered tapered surface that widens from the first inlet direction to the second inlet direction at a portion of the grounding terminal portion that is in contact with the ground terminal portion. 2. The grounding structure of claim 1, wherein the ground connection portion is threaded or hooked to the grounding body portion when the grounding connection portion is inserted into the grounding body portion. delete The ground structure according to claim 1, wherein the conductive socket portion has a structure of being divided. The ground structure according to claim 1, wherein the ground connection part further comprises an elastic part having an elastic force between the conductive socket part and the socket pressing part. A mounting part on which a substrate for forming a thin film is placed; A ground electrode part embedded in the seating part and adjusting a voltage in an area where the substrate is placed; A ground terminal portion electrically connected to the ground electrode and exposed to the outside of the seating portion, and a through hole having a first inlet and a second inlet opposite to the first inlet, and the exposed ground terminal portion is connected to the first inlet A grounding structure including a grounding body for receiving and receiving the second inlet; And And a ground connection portion inserted into the first inlet from the second inlet of the grounding body portion and electrically connected to the grounding terminal portion to be electrically connected to the grounding terminal portion, Wherein the ground connection portion includes a conductive socket portion that surrounds the ground terminal portion and is inserted from the second inlet to the first inlet; And a socket pressing portion for pressing the conductive socket portion to make the conductive socket portion face the ground terminal portion and the grounding body portion. The substrate supporting unit according to claim 7, further comprising a heating electrode part built in the seating part to heat the substrate placed on the seating part. A process chamber into which a reaction gas is injected; A substrate support unit disposed in the process chamber and on which a substrate to be brought in from outside is placed to form a thin film; And And a plasma electrode part arranged to face the substrate supporting unit in the process chamber and for generating a plasma from the reaction gas, The substrate support unit A mounting part that is seated inside the process chamber and on which the substrate to be loaded is placed; A ground electrode part embedded in the seating part and adjusting a voltage in an area where the substrate is placed; And a through hole having a ground terminal portion electrically connected to the ground electrode portion and exposed to the outside of the seating portion and having a first inlet and a second inlet opposite to the first inlet, and the exposed ground terminal portion is connected to the first inlet And a grounding body portion inserted into the second inlet from the grounding body portion; And And a ground connection portion inserted into the first inlet from the second inlet of the grounding body portion and electrically connected to the grounding terminal portion to be electrically connected to the grounding terminal portion, Wherein the ground connection portion includes a conductive socket portion that surrounds the ground terminal portion and is inserted from the second inlet to the first inlet; And a socket pressing portion for pressing the conductive socket portion to make the conductive socket portion face the ground terminal portion and the grounding body portion.

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