KR19990036719A - 자기저항 효과형 헤드 - Google Patents
자기저항 효과형 헤드 Download PDFInfo
- Publication number
- KR19990036719A KR19990036719A KR1019980040877A KR19980040877A KR19990036719A KR 19990036719 A KR19990036719 A KR 19990036719A KR 1019980040877 A KR1019980040877 A KR 1019980040877A KR 19980040877 A KR19980040877 A KR 19980040877A KR 19990036719 A KR19990036719 A KR 19990036719A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- bias control
- ferromagnetic layer
- ferromagnetic
- magnetoresistive
- Prior art date
Links
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 106
- 230000005415 magnetization Effects 0.000 claims abstract description 58
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 10
- 229910003321 CoFe Inorganic materials 0.000 claims abstract description 8
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 8
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 7
- 229910015140 FeN Inorganic materials 0.000 claims abstract description 6
- 229910052796 boron Inorganic materials 0.000 claims abstract description 6
- 230000005291 magnetic effect Effects 0.000 claims description 82
- 230000000694 effects Effects 0.000 claims description 18
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 12
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 230000003993 interaction Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 255
- 239000003302 ferromagnetic material Substances 0.000 description 11
- 229910019236 CoFeB Inorganic materials 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000000696 magnetic material Substances 0.000 description 5
- 230000001172 regenerating effect Effects 0.000 description 5
- 239000002885 antiferromagnetic material Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910019222 CoCrPt Inorganic materials 0.000 description 1
- 229910003289 NiMn Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/488—Disposition of heads
- G11B5/4886—Disposition of heads relative to rotating disc
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9306305A JPH11110720A (ja) | 1997-10-01 | 1997-10-01 | 磁気抵抗効果型ヘッド |
| JP97-306305 | 1997-10-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR19990036719A true KR19990036719A (ko) | 1999-05-25 |
Family
ID=17955513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980040877A KR19990036719A (ko) | 1997-10-01 | 1998-09-30 | 자기저항 효과형 헤드 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH11110720A (ja) |
| KR (1) | KR19990036719A (ja) |
| CN (1) | CN1213816A (ja) |
| DE (1) | DE19844887A1 (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6108177A (en) * | 1998-11-19 | 2000-08-22 | International Business Machines Corporation | Tunnel junction structure with FeX ferromagnetic layers |
| JP3623418B2 (ja) * | 1999-12-06 | 2005-02-23 | アルプス電気株式会社 | スピンバルブ型磁気抵抗効果素子及びそれを備えた薄膜磁気へッドとそれらの製造方法 |
| US6788501B2 (en) | 2002-09-24 | 2004-09-07 | International Business Machines Corporation | GMR read head having a pinned layer with an active portion oxidized to reduce the magnetic moment thereof |
| CN105911103A (zh) * | 2016-04-13 | 2016-08-31 | 南京工业大学 | 钉扎型自旋阀结构、生物磁传感器、生物分子检测方法 |
-
1997
- 1997-10-01 JP JP9306305A patent/JPH11110720A/ja active Pending
-
1998
- 1998-09-30 KR KR1019980040877A patent/KR19990036719A/ko active IP Right Grant
- 1998-09-30 CN CN98119406A patent/CN1213816A/zh active Pending
- 1998-09-30 DE DE19844887A patent/DE19844887A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11110720A (ja) | 1999-04-23 |
| DE19844887A1 (de) | 1999-04-08 |
| CN1213816A (zh) | 1999-04-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19980930 |
|
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19980930 Comment text: Request for Examination of Application |
|
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20000629 Patent event code: PE09021S01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20010613 |
|
| NORF | Unpaid initial registration fee | ||
| PC1904 | Unpaid initial registration fee |