KR101922400B1 - 단일 그래핀 층 또는 그래핀 단결정 - Google Patents
단일 그래핀 층 또는 그래핀 단결정 Download PDFInfo
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- KR101922400B1 KR101922400B1 KR1020157015468A KR20157015468A KR101922400B1 KR 101922400 B1 KR101922400 B1 KR 101922400B1 KR 1020157015468 A KR1020157015468 A KR 1020157015468A KR 20157015468 A KR20157015468 A KR 20157015468A KR 101922400 B1 KR101922400 B1 KR 101922400B1
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- graphene
- graphite
- graphene oxide
- layer
- gel
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 967
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 630
- 239000013078 crystal Substances 0.000 title abstract description 90
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 278
- 239000010439 graphite Substances 0.000 claims abstract description 278
- 238000001035 drying Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 36
- 229910052760 oxygen Inorganic materials 0.000 claims description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 32
- 239000007770 graphite material Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 32
- 239000001301 oxygen Substances 0.000 claims description 32
- 239000007788 liquid Substances 0.000 claims description 25
- 229910021382 natural graphite Inorganic materials 0.000 claims description 25
- 239000000203 mixture Substances 0.000 claims description 23
- 239000000725 suspension Substances 0.000 claims description 23
- 229910052799 carbon Inorganic materials 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 239000007800 oxidant agent Substances 0.000 claims description 15
- 229910021383 artificial graphite Inorganic materials 0.000 claims description 13
- 230000001590 oxidative effect Effects 0.000 claims description 13
- 239000002931 mesocarbon microbead Substances 0.000 claims description 12
- 239000007787 solid Substances 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 11
- 239000012530 fluid Substances 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 9
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 8
- 239000004917 carbon fiber Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 230000002378 acidificating effect Effects 0.000 claims description 6
- 239000000571 coke Substances 0.000 claims description 6
- 229910021385 hard carbon Inorganic materials 0.000 claims description 6
- 239000011302 mesophase pitch Substances 0.000 claims description 6
- 229910021384 soft carbon Inorganic materials 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000002798 polar solvent Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 37
- 239000010410 layer Substances 0.000 description 185
- 239000000499 gel Substances 0.000 description 136
- 239000011888 foil Substances 0.000 description 101
- 239000010408 film Substances 0.000 description 56
- 239000002245 particle Substances 0.000 description 43
- 238000005087 graphitization Methods 0.000 description 39
- 230000008569 process Effects 0.000 description 38
- 239000013081 microcrystal Substances 0.000 description 29
- 230000007547 defect Effects 0.000 description 21
- 239000002041 carbon nanotube Substances 0.000 description 20
- 238000000576 coating method Methods 0.000 description 20
- 229910021393 carbon nanotube Inorganic materials 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 18
- 238000005229 chemical vapour deposition Methods 0.000 description 17
- 229920001721 polyimide Polymers 0.000 description 16
- 239000004642 Polyimide Substances 0.000 description 15
- 239000011247 coating layer Substances 0.000 description 14
- 239000012792 core layer Substances 0.000 description 13
- 229920000642 polymer Polymers 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- 125000004432 carbon atom Chemical group C* 0.000 description 12
- 230000006870 function Effects 0.000 description 12
- 238000004377 microelectronic Methods 0.000 description 11
- 238000001878 scanning electron micrograph Methods 0.000 description 11
- 239000002356 single layer Substances 0.000 description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 239000002134 carbon nanofiber Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 239000002131 composite material Substances 0.000 description 9
- 239000000835 fiber Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 238000013456 study Methods 0.000 description 9
- 238000002441 X-ray diffraction Methods 0.000 description 8
- 238000005266 casting Methods 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 229930195733 hydrocarbon Natural products 0.000 description 8
- 150000002430 hydrocarbons Chemical group 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- 239000011230 binding agent Substances 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 239000012286 potassium permanganate Substances 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical group C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 239000004215 Carbon black (E152) Substances 0.000 description 6
- 238000005411 Van der Waals force Methods 0.000 description 6
- 238000013459 approach Methods 0.000 description 6
- 125000003118 aryl group Chemical group 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910017604 nitric acid Inorganic materials 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 238000004630 atomic force microscopy Methods 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 5
- 238000004050 hot filament vapor deposition Methods 0.000 description 5
- 230000002687 intercalation Effects 0.000 description 5
- 238000009830 intercalation Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 238000004626 scanning electron microscopy Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- 238000001069 Raman spectroscopy Methods 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000003763 carbonization Methods 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910021392 nanocarbon Inorganic materials 0.000 description 4
- 229920006254 polymer film Polymers 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- 229920002799 BoPET Polymers 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000003575 carbonaceous material Substances 0.000 description 3
- 238000010000 carbonizing Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000011835 investigation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000006664 bond formation reaction Methods 0.000 description 2
- 238000003490 calendering Methods 0.000 description 2
- 150000001721 carbon Chemical class 0.000 description 2
- 239000005539 carbonized material Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 150000002605 large molecules Chemical class 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 239000012429 reaction media Substances 0.000 description 2
- 239000004317 sodium nitrate Substances 0.000 description 2
- 235000010344 sodium nitrate Nutrition 0.000 description 2
- 238000000527 sonication Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- WWTBZEKOSBFBEM-SPWPXUSOSA-N (2s)-2-[[2-benzyl-3-[hydroxy-[(1r)-2-phenyl-1-(phenylmethoxycarbonylamino)ethyl]phosphoryl]propanoyl]amino]-3-(1h-indol-3-yl)propanoic acid Chemical compound N([C@@H](CC=1C2=CC=CC=C2NC=1)C(=O)O)C(=O)C(CP(O)(=O)[C@H](CC=1C=CC=CC=1)NC(=O)OCC=1C=CC=CC=1)CC1=CC=CC=C1 WWTBZEKOSBFBEM-SPWPXUSOSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- BZSXEZOLBIJVQK-UHFFFAOYSA-N 2-methylsulfonylbenzoic acid Chemical compound CS(=O)(=O)C1=CC=CC=C1C(O)=O BZSXEZOLBIJVQK-UHFFFAOYSA-N 0.000 description 1
- 241000157282 Aesculus Species 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000760 Hardened steel Inorganic materials 0.000 description 1
- XOJVVFBFDXDTEG-UHFFFAOYSA-N Norphytane Natural products CC(C)CCCC(C)CCCC(C)CCCC(C)C XOJVVFBFDXDTEG-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000007550 Rockwell hardness test Methods 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- IUHFWCGCSVTMPG-UHFFFAOYSA-N [C].[C] Chemical class [C].[C] IUHFWCGCSVTMPG-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003421 catalytic decomposition reaction Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 229940126208 compound 22 Drugs 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 235000010181 horse chestnut Nutrition 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000007541 indentation hardness test Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000009533 lab test Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011156 metal matrix composite Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002296 pyrolytic carbon Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- HIFJUMGIHIZEPX-UHFFFAOYSA-N sulfuric acid;sulfur trioxide Chemical compound O=S(=O)=O.OS(O)(=O)=O HIFJUMGIHIZEPX-UHFFFAOYSA-N 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
-
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/19—Preparation by exfoliation
-
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/19—Preparation by exfoliation
- C01B32/192—Preparation by exfoliation starting from graphitic oxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/198—Graphene oxide
-
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/20—Graphite
- C01B32/21—After-treatment
- C01B32/22—Intercalation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/20—Graphite
- C01B32/21—After-treatment
- C01B32/22—Intercalation
- C01B32/225—Expansion; Exfoliation
-
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/20—Graphite
- C01B32/21—After-treatment
- C01B32/23—Oxidation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/68—Crystals with laminate structure, e.g. "superlattices"
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Abstract
Description
도 2a 흑연 삽입 화합물들(GICs) 또는 흑연 옥사이드 분말들의 열 박리 후의 흑연 웜 샘플의 SEM 이미지; 도 2b 가요성 흑연 포일 표면에 평행하지 않은 배향들을 갖는 다수의 흑연 박편들을 나타내고 또한 다수의 결함들인 구부러지거나 접힌 박편들을 나타내는, 가요성 흑연 포일의 단면의 SEM 이미지.
도 3a GO-유도된 그래핀 모놀리스의 SEM 이미지로서, 여기서, 측면 치수가 원래 30nm 내지 2㎛인 다중 그래핀 시트들은 산화되고 박리되고 재배향되고, 수백 cm 너비 또는 길이로 이어질 수 있는 연속-길이 그래핀 시트들 또는 층들로 이음매 없이(seamlessly) 융합되었다(단지 120㎛ 또는 0.12mm 너비의 25-cm 너비 단일 그래핀 층은 이러한 SEM 이미지로 나타냄); 도 3b 제지 공정(예를 들면, 진공-보조 여과)을 사용하여 별개의 그래핀 시트들/소판들로부터 제조된 그래핀 종이/필름의 단면의 SEM 이미지. 상기 이미지는 접히거나 끊겨 있으며(일체형이 아님) 필름/종이 표면에 평행하지 않은 배향들을 가지며 다수의 결함들 또는 결점들을 갖는, 다수의 별개의 그래핀 시트들을 도시한다; 도 3c 서로 평행하고 두께-방향 또는 결정학적 c-축 방향으로 화학적으로 결합된 다중 그래핀 평면들로 구성된 단일 그래핀 개체 또는 그래핀 단결정의 형성 공정을 도시하는 개략도 및 수반하는 SEM 이미지; 도 3d 촉매 표면(예를 들면, Cu 또는 Ni) 상에서 탄화수소의 CVD에 의해 수득된 선행 기술의 그래핀 다결정의 개략도; 도 3e 본 발명의 그래핀 단결정의 개략도; 도 3f 본 발명의 또 다른 그래핀 단결정(불완전한 결정립 경계들을 갖는 "다결정", 예를 들면, 결함들을 갖는 그래핀 단결정)의 개략도.
도 4a 흑연화 또는 재흑연화를 위한 최종 열처리 온도의 함수로서 플롯팅된, GO-유도된 단일 그래핀 층(▲), GO 종이(■), 및 FG 포일(◆)의 열전도도 값들; 도 4b 최종 흑연화 또는 재흑연화 온도의 함수로서 모두 플롯팅된, GO-유도된 단일 그래핀 층(■) 및 1시간 동안 열-처리된 폴리이미드-유도된 열분해 흑연(PG)(x) 및 3시간 동안 열-처리된 폴리이미드-유도된 열분해 흑연(PG)(▲)의 열전도도 값들; 도 4c 최종 흑연화 또는 재흑연화 온도의 함수로서 플롯팅된, GO-유도된 단일 그래핀 층(◆), GO 종이(■), 및 FG 포일(x)의 전기전도도 값들. 주의: 부호 표시는 도 4a에서 4c까지 다양하다.
도 5a GO 필름, 도 5b 150℃에서 열적으로 환원된(부분적으로 재흑연화된) GO 필름, 및 도 5c 고도로 환원되고 재흑연화된 GO 필름(단일 그래핀 층)의 X-선 회절 곡선들.
도 6a X-선 회절에 의해 측정된 그래핀 평면간 간격; 도 6b GO-유도된 단일 그래핀 층에서의 산소 함량; 및 도 6c GO-유도된 단일 그래핀 층 및 상응하는 가요성 흑연(FG) 포일의 열전도도로서, 모두는 최종 열처리 온도의 함수로서 플롯팅되어 있음.
도 7 10분 동안 동일한 비디오 프로그램들을 구동하는 2개의 동일한 스마트폰의 표면 온도 영역들. 하나의 스마트폰(상부 이미지)은 CPU와 캐스팅 사이에 배치된 가요성 흑연(FG) 포일들의 2개의 시트들을 포함하며, 38.6℃만큼 높은 외부 표면 온도를 나타낸다. 다른 스마트폰(하부 이미지)은 단일 그래핀 층-코팅된 FG 포일의 하나의 시트를 포함하며, 25.4℃의 외부 표면 온도를 나타낸다.
도 8a 혼합 법칙(rule-of-mixture law)(흑연화 시간 = 모든 시험편들에 대해 1시간)을 근거로 하여 이론적으로 예상되는 값들(x)과 함께, 최종 흑연화 또는 재흑연화 온도의 함수로서 플롯팅된, GO 층 단독(■), GO-코팅된 가요성 흑연(FG) 포일(◆), 및 FG 포일 단독(▲)의 열전도도 값들; 도 8b 3시간 동안 흑연화된 PG의 열전도도 값들과 함께, 1시간 동안 최종 흑연화 또는 재흑연화 온도의 함수로서 플롯팅된, GO 층 단독(■), GO-코팅된 가요성 흑연(FG) 포일(◆), 및 폴리이미드-유도된 열분해 흑연(PG)의 열전도도 값들; 도 8c 혼합 법칙을 근거로 하여 이론적으로 예상되는 값들(■)과 함께, 최종 흑연화 또는 재흑연화 온도의 함수로서 플롯팅된, GO 층 단독(◆), GO-코팅된 가요성 흑연(FG) 포일(▲), 및 FG 포일 단독(x)의 전기전도도 값들. 주의: 부호 표시는 도 8a에서 도 8c까지 다양하다.
코팅-대-코어 층 두께 비의 함수로서 플롯팅된, 일련의 GO-유도된 단일 그래핀-코팅된 FG 포일들의 인장 강도(도 9a), 스크래치 가시성(scratch visibility)(도 9b), 스크래치 깊이(도 9c), 및 록웰 경도(도 9d).
Claims (40)
- 긴밀하게 패킹되고(closely packed) 화학적으로 결합된 평행한 그래핀 옥사이드 평면(graphene oxide plane)들을 포함하는 단일 그래핀 개체(unitary graphene entity)로서,
상기 그래핀 옥사이드 평면들은 0.335 내지 0.50nm의 평면간 간격(inter-plane spacing)을 가지며, 상기 그래핀 개체는, 1㎛ 초과의 두께, 1,500S/cm 초과 내지 20,000S/cm의 전기전도도, 600W/mK 초과 내지 1,900W/mK의 열전도도, 1.8g/cm3 초과의 물리적 밀도, 및 0.01 내지 10중량%의 산소 함량을 갖고, 상기 단일 그래핀 개체는 100℃ 초과의 온도에서 그래핀 옥사이드 겔을 열-처리함에 의해 수득되고, 2개의 그래핀 옥사이드 평면들 간의 평균 어긋난-배향 각(average mis-orientation angle)은 10˚ 미만인, 단일 그래핀 개체. - 제1항에 있어서, 상기 단일 그래핀 개체에 분산된 별개의 흑연 박편 또는 그래핀 소판(platelet)을 포함하지 않는, 단일 그래핀 개체.
- 제1항에 있어서, 상기 단일 그래핀 개체에서 완전한 결정립 경계를 갖지 않는, 단일 그래핀 개체.
- 제1항에 있어서, 상기 화학적으로 결합된 평행한 그래핀 옥사이드 평면들은 sp2 및 sp3 전자 배치(electronic configuration)의 조합을 함유하는, 단일 그래핀 개체.
- 제1항에 있어서, 상기 단일 그래핀 개체는 100㎛ 내지 1cm의 길이 또는 너비를 갖는, 단일 그래핀 개체.
- 제1항에 있어서, 광학적으로 불투명한, 단일 그래핀 개체.
- 제1항에 있어서, 60 내지 100의 록웰(Rockwell) 경도 값을 갖는, 단일 그래핀 개체.
- 제1항에 있어서, 10MPa 내지 120MPa의 인장 강도를 갖는, 단일 그래핀 개체.
- 긴밀하게 패킹되고 화학적으로 결합된 평행한 그래핀 옥사이드 평면들을 포함하는 단일 그래핀 개체의 제조 방법으로서,
상기 그래핀 옥사이드 평면들은 0.335 내지 0.50nm의 평면간 간격을 가지며, 상기 그래핀 개체는, 10nm 초과의 두께, 1,500S/cm 초과 내지 20,000S/cm의 전기전도도, 600W/mK 초과 내지 1,900W/mK의 열전도도, 1.8g/cm3 초과의 물리적 밀도, 및 0.01 내지 10중량%의 산소 함량을 갖고, 2개의 그래핀 옥사이드 평면들 간의 평균 어긋난-배향 각은 10˚ 미만이며,
상기 방법은,
(a) 유체 매질 중에 분산된 그래핀 옥사이드 분자들을 갖는 그래핀 옥사이드 겔을 제조하는 단계로서, 상기 그래핀 옥사이드 겔은 광학적으로 투명하거나 반투명한, 제조 단계;
(b) 상기 그래핀 옥사이드 겔의 층을 지지 기판의 표면 상에 침착시켜, 상기 지지 기판의 표면 상에 침착된 그래핀 옥사이드 겔을 형성하는 단계;
(c) 상기 침착된 그래핀 옥사이드 겔 층으로부터 상기 유체 매질을 부분적으로 또는 완전히 제거하여 그래핀 옥사이드 층을 형성하는 단계; 및
(d) 상기 그래핀 옥사이드 층을 500℃ 초과의 온도에서 열-처리하여 상기 단일 그래핀 개체를 형성하는 단계를 포함하는, 단일 그래핀 개체의 제조 방법. - 제9항에 있어서, 상기 그래핀 옥사이드 겔은, 반응 온도에서 반응 용기 중에서, 분말 또는 섬유상 형태의 흑연 물질을, 광학적으로 투명하거나 반투명한 그래핀 옥사이드 겔을 수득하기에 충분한 시간 기간 동안, 산화 액체 중에 침지시켜 광학적으로 불투명한 현탁액을 형성함에 의해 제조되고, 상기 그래핀 옥사이드 겔은 5 이하의 pH 값을 갖는 산성 매질 중에 분산된 그래핀 옥사이드 분자들로 구성되며, 상기 그래핀 옥사이드 분자들은 20중량% 이상의 산소 함량을 갖는, 단일 그래핀 개체의 제조 방법.
- 제9항에 있어서, 상기 그래핀 옥사이드 겔은, 흑연 물질을 산화제 중에 침지시켜 광학적으로 불투명한 현탁액을 형성시키고, 광학적으로 투명하거나 반투명한 용액이 형성될 때까지 산화 반응이 진행되게 함에 의해 제조되며, 상기 흑연 물질은 천연 흑연, 인조 흑연, 메소-상 탄소, 메소-상 피치, 메소-탄소 마이크로-비드, 연질 탄소, 경질 탄소, 코크, 탄소 섬유, 탄소 나노-섬유, 탄소 나노-튜브, 또는 이들의 조합으로부터 선택되는, 단일 그래핀 개체의 제조 방법.
- 제9항에 있어서, 상기 그래핀 옥사이드 층을 압축하는 단계를 추가로 포함하는, 단일 그래핀 개체의 제조 방법.
- 제12항에 있어서, 상기 압축 단계 후에 추가 열-처리하는 단계를 추가로 포함하는, 단일 그래핀 개체의 제조 방법.
- 제9항에 있어서, 상기 단계 (b) 및 단계 (c)는 고체 기판 물질의 시트를 롤러로부터 침착 영역으로 공급하는 단계, 그래핀 옥사이드 겔의 층을 상기 고체 기판 물질의 상기 시트의 표면 상에 침착시켜 상기 고체 기판 물질의 상기 시트의 표면 상에 그래핀 옥사이드 겔 층을 형성하는 단계, 상기 그래핀 옥사이드 겔을 건조시켜 상기 기판 표면 상에 침착된 건조된 그래핀 옥사이드 층을 형성하는 단계, 및 그래핀 옥사이드 층-침착된 기판 시트를 콜렉터 롤러(collector roller) 상에 수집하는 단계를 포함하는, 단일 그래핀 개체의 제조 방법.
- 제9항에 있어서, 상기 그래핀 옥사이드 겔의 상기 유체 매질이 물, 알콜을 포함하는 극성 용매, 물과 산의 혼합물, 및 이들의 배합물로 이루어진 그룹으로부터 선택되는, 단일 그래핀 개체의 제조 방법.
- 제9항에 있어서, 상기 유체 매질이 진공 오븐을 사용하여 제거되는, 단일 그래핀 개체의 제조 방법.
- 제9항에 있어서, 상기 그래핀 옥사이드 겔에서 상기 그래핀 옥사이드 분자들은 200g/mole 내지 43,000g/mole의 평균 분자량을 갖는, 단일 그래핀 개체의 제조 방법.
- 제9항에 있어서, 상기 그래핀 옥사이드 분자들은 가장자리-대-가장자리(edge-to-edge) 방식으로 공유 결합을 형성하는, 단일 그래핀 개체의 제조 방법.
- 제9항에 있어서, 상기 열-처리 온도는 1,000℃ 초과 내지 2,200℃인, 단일 그래핀 개체의 제조 방법.
- 제9항에 있어서, 상기 열-처리 온도는 2,200℃ 초과인, 단일 그래핀 개체의 제조 방법.
- 제9항에 있어서, 상기 침착된 그래핀 옥사이드 겔의 두께는 건조 전에 10mm 미만인, 단일 그래핀 개체의 제조 방법.
- 제9항에 있어서, 상기 침착된 그래핀 옥사이드 겔의 두께는 건조 전에 500㎛ 미만인, 단일 그래핀 개체의 제조 방법.
- 제9항에 있어서, 상기 단일 그래핀 개체의 두께는 10nm 초과 내지 200㎛ 미만인, 단일 그래핀 개체의 제조 방법.
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PCT/US2013/071469 WO2014082008A1 (en) | 2012-11-26 | 2013-11-22 | Unitary graphene layer or graphene single crystal |
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