KR101387862B1 - 기판의 처리 방법, 프로그램, 컴퓨터 기억매체 및 기판 처리 시스템 - Google Patents
기판의 처리 방법, 프로그램, 컴퓨터 기억매체 및 기판 처리 시스템 Download PDFInfo
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- KR101387862B1 KR101387862B1 KR1020090009667A KR20090009667A KR101387862B1 KR 101387862 B1 KR101387862 B1 KR 101387862B1 KR 1020090009667 A KR1020090009667 A KR 1020090009667A KR 20090009667 A KR20090009667 A KR 20090009667A KR 101387862 B1 KR101387862 B1 KR 101387862B1
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- South Korea
- Prior art keywords
- resist pattern
- substrate
- heat treatment
- temperature
- dimension
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 100
- 238000012545 processing Methods 0.000 title claims description 111
- 238000003672 processing method Methods 0.000 title claims description 6
- 238000003860 storage Methods 0.000 title claims description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 143
- 238000005259 measurement Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 91
- 230000008569 process Effects 0.000 claims description 84
- 238000000576 coating method Methods 0.000 claims description 33
- 239000011248 coating agent Substances 0.000 claims description 29
- 239000003795 chemical substances by application Substances 0.000 claims description 14
- 238000012937 correction Methods 0.000 claims description 11
- 238000011161 development Methods 0.000 claims description 11
- 238000007689 inspection Methods 0.000 abstract description 62
- 235000012431 wafers Nutrition 0.000 description 156
- 230000018109 developmental process Effects 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- 238000012546 transfer Methods 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2008-087901 | 2008-03-28 | ||
JP2008087901A JP5186264B2 (ja) | 2008-03-28 | 2008-03-28 | 基板の処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090103705A KR20090103705A (ko) | 2009-10-01 |
KR101387862B1 true KR101387862B1 (ko) | 2014-04-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090009667A KR101387862B1 (ko) | 2008-03-28 | 2009-02-06 | 기판의 처리 방법, 프로그램, 컴퓨터 기억매체 및 기판 처리 시스템 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5186264B2 (ja) |
KR (1) | KR101387862B1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5391055B2 (ja) * | 2009-12-25 | 2014-01-15 | 東京エレクトロン株式会社 | 半導体装置の製造方法及び半導体装置の製造システム |
JP5107372B2 (ja) * | 2010-02-04 | 2012-12-26 | 東京エレクトロン株式会社 | 熱処理装置、塗布現像処理システム、熱処理方法、塗布現像処理方法及びその熱処理方法又は塗布現像処理方法を実行させるためのプログラムを記録した記録媒体 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004273586A (ja) | 2003-03-06 | 2004-09-30 | Toshiba Corp | パターン形成方法および該パターン形成方法を用いた半導体装置の製造方法 |
JP2005129761A (ja) | 2003-10-24 | 2005-05-19 | Toshiba Corp | ホールパターン形成方法及び半導体装置の製造方法 |
JP2008004591A (ja) | 2006-06-20 | 2008-01-10 | Tokyo Electron Ltd | 基板の処理方法、プログラム、コンピュータ読み取り可能な記録媒体及び基板の処理システム |
-
2008
- 2008-03-28 JP JP2008087901A patent/JP5186264B2/ja active Active
-
2009
- 2009-02-06 KR KR1020090009667A patent/KR101387862B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004273586A (ja) | 2003-03-06 | 2004-09-30 | Toshiba Corp | パターン形成方法および該パターン形成方法を用いた半導体装置の製造方法 |
JP2005129761A (ja) | 2003-10-24 | 2005-05-19 | Toshiba Corp | ホールパターン形成方法及び半導体装置の製造方法 |
JP2008004591A (ja) | 2006-06-20 | 2008-01-10 | Tokyo Electron Ltd | 基板の処理方法、プログラム、コンピュータ読み取り可能な記録媒体及び基板の処理システム |
Also Published As
Publication number | Publication date |
---|---|
KR20090103705A (ko) | 2009-10-01 |
JP5186264B2 (ja) | 2013-04-17 |
JP2009245996A (ja) | 2009-10-22 |
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