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KR100895452B1 - 반도체 발광소자용 양전극 - Google Patents

반도체 발광소자용 양전극 Download PDF

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Publication number
KR100895452B1
KR100895452B1 KR1020077000459A KR20077000459A KR100895452B1 KR 100895452 B1 KR100895452 B1 KR 100895452B1 KR 1020077000459 A KR1020077000459 A KR 1020077000459A KR 20077000459 A KR20077000459 A KR 20077000459A KR 100895452 B1 KR100895452 B1 KR 100895452B1
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KR
South Korea
Prior art keywords
layer
positive electrode
light emitting
electrode
emitting device
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KR1020077000459A
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English (en)
Korean (ko)
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KR20070041506A (ko
Inventor
히사유키 미키
노리타카 무라키
무네타카 와타나베
Original Assignee
쇼와 덴코 가부시키가이샤
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Publication of KR20070041506A publication Critical patent/KR20070041506A/ko
Application granted granted Critical
Publication of KR100895452B1 publication Critical patent/KR100895452B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

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  • Led Devices (AREA)
KR1020077000459A 2004-07-29 2005-07-28 반도체 발광소자용 양전극 KR100895452B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004222336 2004-07-29
JPJP-P-2004-00222336 2004-07-29

Publications (2)

Publication Number Publication Date
KR20070041506A KR20070041506A (ko) 2007-04-18
KR100895452B1 true KR100895452B1 (ko) 2009-05-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077000459A KR100895452B1 (ko) 2004-07-29 2005-07-28 반도체 발광소자용 양전극

Country Status (4)

Country Link
JP (4) JP2009033210A (ja)
KR (1) KR100895452B1 (ja)
CN (1) CN100590898C (ja)
TW (1) TWI275190B (ja)

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KR100986518B1 (ko) 2008-06-16 2010-10-07 엘지이노텍 주식회사 반도체 발광소자

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JP2008177525A (ja) 2006-12-20 2008-07-31 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US20110018022A1 (en) * 2008-03-13 2011-01-27 Okabe Takehiko Semiconductor light-emitting device and method for manufacturing the same
USPP22761P2 (en) 2010-04-23 2012-05-29 Spring Meadow Nursery, Inc. Potentilla plant named ‘White Lady’
TWI412159B (zh) * 2008-06-16 2013-10-11 Toyoda Gosei Kk 半導體發光元件、其電極以及製造方法、及燈
US8716723B2 (en) 2008-08-18 2014-05-06 Tsmc Solid State Lighting Ltd. Reflective layer between light-emitting diodes
US9293656B2 (en) 2012-11-02 2016-03-22 Epistar Corporation Light emitting device
KR101257572B1 (ko) * 2008-12-15 2013-04-23 도요타 고세이 가부시키가이샤 반도체 발광 소자
JP5350833B2 (ja) 2009-02-20 2013-11-27 株式会社東芝 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
WO2010113399A1 (ja) 2009-04-02 2010-10-07 パナソニック株式会社 窒化物系半導体素子およびその製造方法
CN101859838B (zh) * 2009-04-07 2014-09-10 裕星企业有限公司 一种发光二极管结构
KR101081166B1 (ko) * 2009-09-23 2011-11-07 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
KR101103892B1 (ko) * 2009-12-08 2012-01-12 엘지이노텍 주식회사 발광소자 및 발광소자 패키지
EP2555257A1 (en) * 2010-04-01 2013-02-06 Panasonic Corporation Nitride semiconductor element and manufacturing method therefor
CN101846256A (zh) * 2010-05-04 2010-09-29 蔡州 Led光源
CN102810613B (zh) * 2011-05-30 2016-04-13 比亚迪股份有限公司 电流扩散电极、半导体发光器件及其制备方法
JP6077201B2 (ja) * 2011-08-11 2017-02-08 昭和電工株式会社 発光ダイオードおよびその製造方法
JP5639626B2 (ja) * 2012-01-13 2014-12-10 シャープ株式会社 半導体発光素子及び電極成膜方法
JP5888132B2 (ja) * 2012-06-08 2016-03-16 豊田合成株式会社 発光装置の製造方法
TWI514628B (zh) * 2013-10-24 2015-12-21 Lextar Electronics Corp 電極結構與具有電極結構的發光二極體結構
KR101561198B1 (ko) 2013-11-12 2015-10-19 주식회사 세미콘라이트 반도체 발광소자
KR101628244B1 (ko) * 2014-02-11 2016-06-21 주식회사 세미콘라이트 반도체 발광소자
CN104409601A (zh) * 2014-11-05 2015-03-11 扬州中科半导体照明有限公司 具有双反射层的倒装发光二极管芯片
CN107123594B (zh) * 2017-05-10 2019-11-26 湘能华磊光电股份有限公司 Led电极制作方法、led电极和led芯片
KR102622753B1 (ko) * 2020-02-17 2024-01-10 삼성에스디아이 주식회사 이차전지용 레이저 용접 방법 및 모니터링 방법
CN112289900B (zh) * 2020-09-16 2021-10-08 华灿光电(苏州）有限公司 紫外发光二极管外延片及其制备方法
CN116364827B (zh) * 2023-05-29 2023-08-29 江西兆驰半导体有限公司 一种mini LED及其制备方法

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JP2003160785A (ja) * 2001-11-27 2003-06-06 Toshiba Corp 赤色発光蛍光体とそれを用いた発光装置
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
JP2004179347A (ja) * 2002-11-26 2004-06-24 Matsushita Electric Works Ltd 半導体発光素子
JP2004193270A (ja) * 2002-12-10 2004-07-08 Sharp Corp 酸化物半導体発光素子
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Cited By (1)

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KR100986518B1 (ko) 2008-06-16 2010-10-07 엘지이노텍 주식회사 반도체 발광소자

Also Published As

Publication number Publication date
CN1993837A (zh) 2007-07-04
JP2009065196A (ja) 2009-03-26
JP2009033213A (ja) 2009-02-12
JP5533675B2 (ja) 2014-06-25
KR20070041506A (ko) 2007-04-18
CN100590898C (zh) 2010-02-17
JP2009033210A (ja) 2009-02-12
TW200610200A (en) 2006-03-16
TWI275190B (en) 2007-03-01
JP2011066461A (ja) 2011-03-31

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