KR100792396B1 - 파티션 구조형 가열유닛과 이를 이용한 히팅장치 - Google Patents
파티션 구조형 가열유닛과 이를 이용한 히팅장치 Download PDFInfo
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- KR100792396B1 KR100792396B1 KR1020050095655A KR20050095655A KR100792396B1 KR 100792396 B1 KR100792396 B1 KR 100792396B1 KR 1020050095655 A KR1020050095655 A KR 1020050095655A KR 20050095655 A KR20050095655 A KR 20050095655A KR 100792396 B1 KR100792396 B1 KR 100792396B1
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- partition
- heating unit
- reaction gas
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 84
- 238000005192 partition Methods 0.000 title claims abstract description 51
- 239000012495 reaction gas Substances 0.000 claims abstract description 37
- 239000011810 insulating material Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000002826 coolant Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000004804 winding Methods 0.000 claims 1
- 239000000498 cooling water Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000000376 reactant Substances 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Control Of Resistance Heating (AREA)
- Instantaneous Water Boilers, Portable Hot-Water Supply Apparatuses, And Control Of Portable Hot-Water Supply Apparatuses (AREA)
- Electric Stoves And Ranges (AREA)
Abstract
Description
122a:유동홀, 123,123-1:수평 파티션,123a,123-1a:유동홀, 130:도입부,
140:배출부,200:수용부, 210:본체, 220: 냉각수 튜브, 230:단열재,
300:제어부 400: 전력공급부,
본 발명은 열을 발생하여 반응가스에 열을 전달하는 가열유닛(100)과 상기 가열유닛(100)을 수용하는 수용부(200)와 상기 가열유닛(100)의 온도를 제어하는 제어부(300)와 상기 가열유닛(100)에 전력을 공급하는 전력공급부(400)로 구성된다.
이 도면에서 도시하는 가열유닛(100)은 상기 수평 파티션(123)에 추가로 수평 파티션(123-1)을 더 구비하여서 된다. 이것은 수평 파티션(123-1)이 추가되므로서 내부에서의 이동시간이 증가하므로 가열효과가 증대될 수 있기 때문이다.
Claims (8)
- 열선(110)에 의해 발생한 열을 반응가스에 전달하기 위한 파티션 구조형 가열유닛(100)에 있어서,원통형상의 본체(121)와, 상기 본체(121)의 내부에 수직방향으로 균일한 간격을 두고 다수개 배치되는 한편 반응가스가 이동하기 위한 유동홀(122a)이 형성되는 수직 파티션(122)과, 유동홀(123a)이 형성되고 수평방향으로 설치되는 수평 파티션(123)으로 서로 직교하여 설치되는 열전달부(120);상기 본체(121)의 일측에 설치되어 반응가스가 도입되는 원통형상의 도입부(130);및상기 본체(121)의 타측에 설치되어 반응가스가 배출되는 원통형상의 배출부(140)를 포함하는 파티션 구조형 가열유닛.
- 제1항에 있어서상기 수평 파티션(123)의 하면에 상기 수평 파티션(123)과 같은 유동홀(123a-1a)이 형성된 수평 파티션(123-1)을 더 포함하는 파티션 구조형 가열유닛.
- 제1항에 있어서상기 도입부(130)는 반응가스가 도입되는 원통형상의 도입홀(131)과 상기 도입홀(131) 주위에 열전달을 차단하기 위한 동심원상의 단열부(132)가 형성되고, 상기 배출부(140)는 반응가스가 배출되는 원통형상의 배출홀(141)과 상기 배출홀(141) 주위에 열전달을 차단하기 위한 동심원상의 단열부(142)가 형성되는 것을 특징으로 하는 파티션 구조형 가열유닛.
- 파티션 구조형 가열유닛을 이용한 히팅장치에 있어서,원통형상의 본체(121)와, 유동홀(122a)이 형성되는 수직 파티션(122),유동홀(123a)이 형성되는 수평 파티션(123)이 직교하여 본체(121) 내부에 다수 배치되는 열전달부(120)와, 상기 본체(121)의 일측에 설치되는 반응가스 도입부(130)와, 상기 본체(121)의 타측에 설치되는 반응가스 배출부(140)와, 상기 본체(121)의 외측에 권취되는 열선(110)으로 이루어지는 가열유닛(100);상기 가열유닛(110)을 수용하되 상기 도입부(130)와 배출부(140)는 양측으로 노출되는 중공형의 본체(210)와, 상기 본체(210)의 두께부에 설치되는 냉각수 튜브(220)와, 상기 본체(210)내 공간에 채워지는 단열재(230)로 이루어진 수용부(200);상기 본체(210)의 외측에 설치되어 상기 가열유닛(100)의 온도를 제어하는 제어부(300);및상기 열선(110)에 전원을 공급하기 위하여 본체(210)에 접속되는 전력공급부(400)를 포함하는 파티션 구조형 가열유닛을 이용한 히팅장치.
- 삭제
- 제4항에 있어서,상기 수용부(200)의 본체(210)는 원통형인 것을 특징으로 하는 파티션 구조형 가열유닛을 이용한 히팅장치.
- 제4항에 있어서,상기 수용부(200)의 본체(210)는 사각형인 것을 특징으로 하는 파티션 구조형 가열유닛을 이용한 히팅장치.
- 제1항 또는 제2항에 있어서상기 가열유닛(100)의 본체(121)와, 수직 파티션(122) 및 수평 파티션(123, 123-1)의 재질이 석영인 것을 특징으로 하는 파티션 구조형 가열유닛.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050095655A KR100792396B1 (ko) | 2005-10-11 | 2005-10-11 | 파티션 구조형 가열유닛과 이를 이용한 히팅장치 |
JP2008535448A JP4943444B2 (ja) | 2005-10-11 | 2006-10-11 | パーテーション構造型の加熱ユニットとこれを用いたヒーティング装置 |
AT06799164T ATE555231T1 (de) | 2005-10-11 | 2006-10-11 | Heizvorrichtung vom partitionstyp |
EP06799164A EP1945831B1 (en) | 2005-10-11 | 2006-10-11 | Partition-type heating apparatus |
PCT/KR2006/004084 WO2007043801A1 (en) | 2005-10-11 | 2006-10-11 | Partition-type heating apparatus |
US12/089,912 US8030597B2 (en) | 2005-10-11 | 2006-10-11 | Partition-type heating apparatus |
Applications Claiming Priority (1)
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KR1020050095655A KR100792396B1 (ko) | 2005-10-11 | 2005-10-11 | 파티션 구조형 가열유닛과 이를 이용한 히팅장치 |
Publications (2)
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KR20070040207A KR20070040207A (ko) | 2007-04-16 |
KR100792396B1 true KR100792396B1 (ko) | 2008-01-08 |
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KR1020050095655A KR100792396B1 (ko) | 2005-10-11 | 2005-10-11 | 파티션 구조형 가열유닛과 이를 이용한 히팅장치 |
Country Status (6)
Country | Link |
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US (1) | US8030597B2 (ko) |
EP (1) | EP1945831B1 (ko) |
JP (1) | JP4943444B2 (ko) |
KR (1) | KR100792396B1 (ko) |
AT (1) | ATE555231T1 (ko) |
WO (1) | WO2007043801A1 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100792396B1 (ko) * | 2005-10-11 | 2008-01-08 | 주식회사 유진테크 | 파티션 구조형 가열유닛과 이를 이용한 히팅장치 |
KR20120139387A (ko) * | 2011-06-17 | 2012-12-27 | 삼성디스플레이 주식회사 | 박막 증착 장치 및 이를 이용한 박막 증착 방법 |
KR101998262B1 (ko) * | 2013-12-17 | 2019-10-01 | 한온시스템 주식회사 | 냉각수 가열식 히터 |
KR101959266B1 (ko) * | 2018-05-31 | 2019-03-18 | 주식회사 에이치엔씨 | 반도체 제조장치 배출라인의 고정용 지그 장치 |
CN114438474A (zh) * | 2022-02-23 | 2022-05-06 | 山东省科学院海洋仪器仪表研究所 | 一种连续批量大面积均匀镀膜热丝化学气相沉积设备及方法 |
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2005
- 2005-10-11 KR KR1020050095655A patent/KR100792396B1/ko active IP Right Grant
-
2006
- 2006-10-11 US US12/089,912 patent/US8030597B2/en not_active Expired - Fee Related
- 2006-10-11 EP EP06799164A patent/EP1945831B1/en not_active Not-in-force
- 2006-10-11 AT AT06799164T patent/ATE555231T1/de active
- 2006-10-11 WO PCT/KR2006/004084 patent/WO2007043801A1/en active Application Filing
- 2006-10-11 JP JP2008535448A patent/JP4943444B2/ja not_active Expired - Fee Related
Patent Citations (5)
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JPH11335845A (ja) * | 1998-05-20 | 1999-12-07 | Ebara Corp | 液体原料気化装置 |
JP2000119858A (ja) * | 1998-10-09 | 2000-04-25 | Mitsubishi Materials Corp | Cvd装置用気化器 |
JP2002217181A (ja) * | 2001-01-19 | 2002-08-02 | Japan Steel Works Ltd:The | 半導体原料供給用気化器 |
KR20030046640A (ko) * | 2001-12-06 | 2003-06-18 | 주성엔지니어링(주) | 소스 및 반응가스 전처리 장치 |
JP2005175249A (ja) * | 2003-12-12 | 2005-06-30 | Japan Pionics Co Ltd | 液体材料の気化器及び気化方法 |
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Publication number | Publication date |
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EP1945831A4 (en) | 2010-12-29 |
ATE555231T1 (de) | 2012-05-15 |
JP2009511745A (ja) | 2009-03-19 |
EP1945831B1 (en) | 2012-04-25 |
EP1945831A1 (en) | 2008-07-23 |
US20090218331A1 (en) | 2009-09-03 |
KR20070040207A (ko) | 2007-04-16 |
US8030597B2 (en) | 2011-10-04 |
JP4943444B2 (ja) | 2012-05-30 |
WO2007043801A1 (en) | 2007-04-19 |
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