KR100777699B1 - thin film transistor array panel for a liquid crystal display and a manufacturing method thereof - Google Patents

Abstract

Red, green, and blue color filters are formed in a stripe form on each of the vertical pixel areas of the display area on the insulating substrate, and a black matrix is formed outside the display area. An overcoat film is formed on the color filter, and a gate wiring including a gate line and a gate pad and a storage capacitor wiring are formed thereon. The gate insulating film, the semiconductor layer, and the ohmic contact layer are sequentially formed on the gate wiring. A data line including a data line and a data pad is formed on the ohmic contact layer, and a protective film is formed thereon. The pixel electrode is patterned on the passivation layer, and overlaps the data line. The color filter also overlaps the data line. An overlapping line of the pixel electrode and the data line is positioned between the overlapping line and the data line of the color filter and the data line. As such, the pixel electrode overlaps the gate line, the gate line of the front end, and the data line to prevent light leakage, and a color filter and a black matrix are formed on the thin film transistor substrate to prevent loss of aperture ratio due to misalignment of the lower and upper plates, thereby improving transmittance. You can.

Light leakage, black matrix, color filter, misalignment, aperture, transmittance

Description

Thin film transistor substrate for liquid crystal display device and manufacturing method thereof

1 is a layout view illustrating a thin film transistor substrate for a liquid crystal display according to a first embodiment of the present invention.

2 is a cross-sectional view taken along the line II-II in FIG.

3A is a layout view showing a thin film transistor substrate in a first step of manufacturing according to the first embodiment of the present invention;

FIG. 3B is a cross sectional view taken along line IIIb-IIIb in FIG. 3A;

FIG. 4a is a layout view in the next step of FIG. 3a;

4B is a cross-sectional view of the line in FIG. 4A;

FIG. 5A is a layout view of the next step of FIG. 4A;

FIG. 5B is a cross sectional view taken along the line Vb-Vb in FIG. 5A;

FIG. 6a is a layout view in the next step of FIG. 5a;

FIG. 6B is a cross sectional view taken along the line VIb-VIb in FIG. 6A;

FIG. 7a is a layout view in the next step of FIG.

FIG. 7B is a cross sectional view taken along the line VIIb-VIIb in FIG. 7A;                 

8 is a layout view illustrating a thin film transistor substrate for a liquid crystal display according to a second exemplary embodiment of the present invention.

9 is a cross-sectional view taken along line VII-VII in FIG. 8,

10A is a layout view showing a thin film transistor substrate in a first step of manufacturing according to the second embodiment of the present invention;

FIG. 10B is a cross-sectional view taken along the line VIIb-VIIb in FIG. 10A;

FIG. 11A is a layout view in the next step of FIG. 10A;

FIG. 11B is a cross-sectional view taken along the line XIB-XIB in FIG. 11A,

12A is a layout view at the next step of FIG. 11A;

FIG. 12B is a cross sectional view taken along the line XIIb-XIIb in FIG. 12A;

FIG. 13A is a layout view in the next step of FIG. 12A;

FIG. 13B is a cross-sectional view taken along the line XIIIb-XIIIb in FIG. 13A.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor substrate for a liquid crystal display device and a manufacturing method thereof, and more particularly, to a thin film transistor substrate for a liquid crystal display device and a method for manufacturing the same, which improve transmittance.

The liquid crystal display is one of the most widely used flat panel display devices. The liquid crystal display includes two glass substrates on which electrodes are formed and a liquid crystal layer interposed therebetween. The liquid crystal molecules of the liquid crystal layer are applied by applying a voltage to the two electrodes. A display device for controlling the amount of light transmitted by rearranging them.

One substrate of such a liquid crystal display device generally includes a thin film transistor for switching a voltage applied to an electrode. In addition to the thin film transistor, the substrate includes a wiring including a gate line and a data line and a gate line receiving a signal from the outside. And gate pads and data pads respectively transferred to the data lines. A pixel electrode electrically connected to the thin film transistor is formed in the pixel region defined by the intersection of the gate line and the data line.

A color filter is formed on another substrate of the liquid crystal display device, a black matrix is formed between the color filters, and a common electrode which forms an electric field together with the pixel electrode of the thin film transistor substrate is also formed.

In order to secure a wide viewing angle in such a liquid crystal display, a method of forming an opening pattern or a protrusion pattern in a pixel electrode or a common electrode has been proposed, but there is a problem in that light transmittance is lowered due to an aperture ratio loss.

The technical problem to be achieved by the present invention is to improve the transmittance.

In order to achieve this problem, in the present invention, the color filter and the black matrix are formed together on the lower plate.

According to the present invention, a color filter is formed on an insulating substrate, and a gate wiring including a gate line and a gate pad connected to the gate line is formed. In the same layer as the gate wiring, a storage capacitor wiring including a storage capacitor line positioned between the gate lines, a storage capacitor electrode connected to the storage capacitor line, and a storage capacitor branch line which is a branch of the storage capacitor electrode is formed. A data line including a data line that is insulated from and intersects the gate line and defines a pixel area and a data pad connected to the data line is formed, and a protective film is formed on the data line. A pixel electrode overlapping a part of the data line is formed on the passivation film.

Here, the color filter is formed in the pixel region and overlaps with a part of the data line, and the side parallel to the data line of the pixel electrode is preferably located in the overlapping surface of the data line and the color filter.

The substrate may be divided into a display area in which a plurality of pixel areas are collected, a pad part in which gate pads and a data pad are located, and a black matrix may be formed between the display area and the pad part.

The color filter is covered with an overcoat layer, and the pixel electrode may have an opening overlapping the storage capacitor branch line.

An auxiliary gate pad and an auxiliary data pad connected to the gate pad and the data pad may be formed on the same layer as the pixel electrode.

When manufacturing the thin film transistor substrate for a liquid crystal display device according to the present invention, a black matrix is first formed on an insulating substrate, and a color filter is formed. Next, a gate line including a gate line and a gate pad connected to the gate line and a storage capacitor line are formed. Next, a gate insulating film covering the gate wiring and the storage capacitor wiring is formed, and a semiconductor layer and an ohmic contact layer are sequentially formed thereon. Next, a data line including a data line and a data pad connected to the data line is formed on the ohmic contact layer, and a protective film is formed on the data line. Next, a pixel electrode overlapping with a part of the data line is formed, wherein a black matrix is preferably formed between the pad portion where the gate pad and the data pad are formed and the display region where the pixel electrode is formed.

On the other hand, it is preferable that the color filter overlaps the data line, and a side parallel to the data line of the pixel electrode is located in the overlapping surface formed by the color filter and the data line.

In addition, after the color filter is formed, an overcoat film may be formed, and the pixel electrode may overlap the gate line.

According to another embodiment of the present invention, a gate line including a gate line and a gate pad connected to the gate line is formed on an insulating substrate, and the storage capacitor line and the storage capacitor are positioned between the gate lines in the same layer as the gate wire. A storage capacitor wiring including a storage capacitor branch connected to a line and a storage capacitor branch line which is a branch of the storage capacitor electrode is formed. A data line including a data line connected to the data line and insulated from and intersecting the gate line and defining a pixel area is formed. A color filter overlapping a part of the data line is formed in the pixel region, and a pixel electrode is formed on the color filter.

Here, the side parallel to the data line of the pixel electrode may be located in an overlapping surface of the data line and the color filter, and an overcoat layer may be formed between the color filter and the pixel electrode.

The pixel electrode may have an opening overlapping the storage capacitor branch line, and the auxiliary gate pad and the auxiliary data pad connected to the gate pad and the data pad may be formed in the same layer as the pixel electrode.

When manufacturing a thin film transistor substrate for a liquid crystal display device according to an exemplary embodiment of the present invention, first, a gate wiring and a storage capacitor wiring including a gate line and a gate pad connected to the gate line are formed on an insulating substrate, and the gate wiring and A gate insulating film covering the storage capacitor wirings is formed. Next, a semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating film. Next, a data line including a data line and a data pad connected to the data line is formed on the ohmic contact layer. Next, a color filter is formed, and a pixel electrode overlapping a part of the data line is formed on the color filter.

In this case, it is preferable that the color filter overlaps the data line and a side parallel to the data line of the pixel electrode is positioned in the overlapping surface formed by the color filter and the data line.

In addition, the overcoat film may be formed after the color filter is formed.

In the present invention, the pixel electrode overlaps the gate line, the front gate line and the data line to prevent light leakage, and a color filter and a black matrix are formed on the thin film transistor substrate to prevent loss of aperture ratio due to misalignment of the lower and upper plates. Can improve. In addition, since the alignment key pattern is formed on the top plate with the same layer as the protrusion pattern without separately performing the process for forming the alignment key pattern, the number of processes can be reduced.

Next, a thin film transistor substrate for a liquid crystal display device and a method for manufacturing the same according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the same. do.

First, a structure of a thin film transistor substrate for a liquid crystal display according to a first embodiment of the present invention will be described in detail with reference to FIGS. 1 and 2.

1 is a layout view illustrating a thin film transistor substrate for a liquid crystal display according to a first exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1.

As shown in FIGS. 1 and 2, the red, green, and blue color filters 11 are formed in a vertical direction in a stripe shape on the insulating substrate 10, and both left and right sides of the color filters 11 will be described later. The data lines 61 overlap with each other. At this time, one color is formed for each color. Although not shown here, a black matrix is formed between the display area in which the color filter 11 is formed and the pad part in which the gate pad 23 and the data pad 64 are described later.

An overcoat film 15 is formed on the color filter 11.

On the overcoat layer 15, a gate wiring made of a metal or a conductor such as aluminum (Al) or aluminum alloy (Al alloy), molybdenum (Mo) or molybdenum-tungsten alloy (MoW), chromium (Cr), tantalum (Ta) 21, 22, 23 and holding capacitor wirings 25, 261, 262, 271, and 272 are formed.

The gate wiring is connected to the gate line 21 extending in the horizontal direction, the gate electrode 22 which is part of the gate line 21, and the end of the gate line 21, and receives a scan signal from the outside to the gate line 21. And a gate pad 23 for transmitting.

The storage capacitor line is positioned between the gate lines 21 and extends perpendicularly from the storage capacitor line 25 parallel to the gate line 21 and the portion of the storage capacitor line 25 adjacent to the data line 61 described later. Storage capacitor branches 271 and 272 which are branches of the first and second storage capacitor electrodes 261 and 262 and the second storage capacitor electrode 262 respectively provided on the left and right sides of the pixel region.

The gate wirings 21, 22, 23 and the storage capacitor wirings 25, 261, 262, 271, and 272 may be formed in a single layer, but may be formed in a double layer or a triple layer. In the case of forming more than two layers, it is preferable that one layer is formed of a material having a low resistance, and the other layer is formed of a material having good contact properties with other materials. For example, a double layer of Cr / Al (or an Al alloy) or Al ( Or a bilayer of Al alloy) / Mo.

A gate insulating film 30 made of silicon nitride (SiN _x ) is formed on the gate wirings 21, 22, 23, and the storage capacitor wirings 25, 261, 262, 271, and 272.

A semiconductor layer 41 made of a semiconductor such as amorphous silicon is formed on the gate insulating film 30, and a resistivity made of a semiconductor such as amorphous silicon doped with n-type impurities such as phosphorus (P) is formed on the semiconductor layer 41. The contact layers 52 and 53 are formed separated from both sides with respect to the gate electrode 22.

On the ohmic contacts 52 and 53 and the gate insulating film 30, data wirings 61, 62, 63 and 64 made of a metal or a conductor such as aluminum or aluminum alloy, molybdenum or molybdenum-tungsten alloy, chromium or tantalum are formed. Formed. The data line includes a data line 61 extending in the vertical direction, a source electrode 62 which is a part of the data line 61, a drain electrode 63 facing the source electrode 62 around the gate electrode 22, and data. And a data pad 64 connected to the line 61 to receive an image signal from the outside and transmit the image signal to the data line 61.

The data wirings 61, 62, 63, and 64 can be formed in a single layer similarly to the gate wirings 21, 22, and 23, but can also be formed in a double layer or a triple layer. In the case of forming more than two layers, it is preferable that one layer is formed of a material having a low resistance and the other layer is formed of a material having good contact properties with other materials.

A protective film 70 made of silicon nitride or an organic film is formed on the data wirings 61, 62, 63, and 64 and the gate insulating film 30. In the passivation layer 70, contact holes 72 exposing the drain electrode 63 are formed, and contact holes 73 and 74 exposing the gate pad 23 and the data pad 64 are formed, respectively.

The pixel electrode 80, the auxiliary gate pad 83, and the auxiliary data pad 84 made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) are formed on the passivation layer 70.

The pixel electrode 80 is connected to the drain electrode 63 through the contact hole 72 to receive an image signal. The pixel electrode 80 overlaps with the storage capacitor line 25 and the first and second storage capacitor electrodes 261 and 262 to form a storage capacitor. In addition, the pixel electrode 80 is patterned along the shapes of the storage capacitor branch lines 271 and 272 to have openings 88 and 89, and the openings are narrowed toward the center from the center of the right edge of the pixel area. Has (87). A projection pattern is formed on an upper plate (not shown) corresponding to the pattern of the pixel electrode 80. As described above, when the openings 87, 88 and 89 and the projection pattern of the pixel electrode 80 are formed, the liquid crystal molecules are inclined. Since multiple regions with different directions are generated, a wide viewing angle can be obtained.

In this case, the pixel electrode 80 also overlaps the gate line 21, the gate line 21 at the front end, and the data line 61 positioned at the left and right of the pixel electrode 80, but overlaps with the data line 61. The point is located between the data line 61 and the color filter 11 described above. The auxiliary gate pad 83 and the auxiliary data pad 84 are connected to the gate pad 23 and the data pad 64 exposed through the contact holes 73 and 74, respectively.

Next, the upper plate facing the thin film transistor substrate will be briefly described. Although not shown in the drawings with respect to the top plate, a common electrode made of a transparent conductive material such as ITO is formed on the entire surface of the top plate, and a protrusion pattern is formed on the common electrode as described above. Alignment key patterns for aligning the upper and lower plates are formed in the same layer as the projection pattern.

In the thin film transistor substrate for the liquid crystal display, the pixel electrode 80 overlaps the gate line 21, the gate line 21 and the data line 61 of the front end, thereby preventing light leakage. It only needs to be formed on the outside.

The transmittance can be improved by forming the color filter 11 and the black matrix on the thin film transistor substrate to prevent the loss of the aperture ratio due to the misalignment of the lower plate and the upper plate. Meanwhile, the alignment key pattern may be formed on the top plate with the same layer as the protrusion pattern without separately performing the process for forming the alignment key pattern, thereby reducing the number of processes.

Next, a method of manufacturing a thin film transistor substrate for a liquid crystal display according to a first exemplary embodiment of the present invention will be described with reference to FIGS. 3A to 7B and FIGS. 1 and 2.

First, as shown in FIGS. 3A and 3B, a black matrix (not shown) is formed on the insulating substrate 10 along the area between the pad area and the display area where the color filter 11 is formed. The photosensitive resin containing the red, green, and blue pigments is applied to the area, and the photo development is performed to form the color filter 11 in the longitudinal direction in the form of a stripe. At this time, the process of forming the color filter 11 will be described in detail. First, the photosensitive resin containing a red pigment is applied and photodeveloped to form a red color filter. Next, the photosensitive resin including the green pigment is applied and photodeveloped to form a green color filter positioned between the red color filters. Next, finally, the photosensitive resin containing the blue pigment is applied and photodeveloped to form a blue color filter positioned between the red color filter and the green color filter. At this time, the order of forming the red, green, and blue color filters may be changed. Next, the overcoat film 15 which covers the color filter 11 is formed.

Next, as shown in FIGS. 4A and 4B, a gate wiring conductor or a metal is deposited to a thickness of 1,000 kV to 3,000 kV by a method such as sputtering, and patterned by a photolithography process using a mask. ), The gate wiring including the gate electrode 22 and the gate pad 23, the storage capacitor line 25, the first and second storage capacitor electrodes 261 and 262, and the storage capacitor branch lines 271 and 272. A storage capacitor wiring is formed.

Next, as shown in FIGS. 5A and 5B, the gate insulating film 30, the amorphous silicon layer, and the amorphous silicon layer doped with n-type impurities are respectively 1,500 kPa to 5,000 using chemical vapor deposition (CVD). 증착, 500 Å to 1,500 Å and 300 Å to 600 Å in thickness, and the two upper layers are patterned by a photolithography process using a mask to form a semiconductor layer 41 and an ohmic contact layer 51.

6A and 6B, a data wiring conductor or metal is deposited to a thickness of 1,500 kV to 3,000 kV by a method such as sputtering, and patterned by a photolithography process using a mask to form a data line 61 and a source. A data line including an electrode 62, a drain electrode 63, and a data pad 64 is formed. Next, the ohmic contact layer 51 not covered by the source electrode 62 and the drain electrode 63 is removed to separate the two portions 52 and 53.

Next, as shown in FIGS. 7A and 7B, silicon nitride is deposited using a chemical vapor deposition method, or spin coating an organic insulating material to form a protective film 70 having a thickness of 3,000 Å or more and patterned by a photolithography process using a mask. To form contact holes 72, 73, and 74.

Next, as shown in FIGS. 1 and 2, a transparent conductive material such as ITO or IZO is deposited on the protective layer 70 to a thickness of 400 μs to 500 μs by a sputtering method, and patterned by a photolithography process using a mask. The pixel electrode 80, the auxiliary gate pad 83, and the auxiliary data pad 84 are formed.

On the other hand, although the color filter 11 may be formed below the wiring as in the first embodiment of the present invention, it may be formed above the wiring, which will be described as a second embodiment of the present invention.

First, a structure of a thin film transistor substrate for a liquid crystal display according to a second exemplary embodiment of the present invention will be described with reference to FIGS. 8 and 9.

FIG. 8 is a layout view illustrating a thin film transistor substrate for a liquid crystal display according to a second exemplary embodiment of the present invention, and FIG. 9 is a cross-sectional view taken along line VII-VII of FIG. 8.

8 and 9, the gate wiring including the gate line 21, the gate electrode 22, and the gate pad 23, the storage capacitor line 25, and the storage capacitor electrodes 261 and 262 on the insulating substrate. And a storage capacitor wiring including the storage capacitor branch lines 271 and 272, and the gate insulating film 30, the semiconductor layer 41, and the ohmic contact layers 52, 53 are sequentially formed thereon. A data line including a data line 61, a source electrode 62, a drain electrode 63, and a data pad 64 is formed on the ohmic contacts 52 and 53 and the gate insulating layer 30. The red, green, and blue color filters 11 are formed in the vertical direction on the gate insulating film 30 in a stripe shape, and overlap the data lines 61 on both the left and right sides of the color filter 11. The color filter 11 has a contact hole 72 exposing the drain electrode 63, and a contact hole 73 exposing the gate pad 23 is formed in the gate insulating film 30, and the data pad ( 64) is exposed. The pixel electrode 80 is connected to the drain electrode 63 through the contact hole 72 on the color filter 11 and is patterned in the same shape as in the first embodiment. The auxiliary gate pad 83 is formed on the gate pad 23 and the auxiliary data pad 84 is formed on the data pad 64 in the same layer as the pixel electrode 80.

On the other hand, an overcoat film may be formed on the color filter 11 and the pixel electrode 80 may be formed thereon. In the case of forming an overcoat film between the color filter 11 and the pixel electrode 80, the process must be additionally performed. However, it is noted that the color filter 11 is damaged in the etching process used when patterning the pixel electrode 80. There is an advantage that can be prevented.

A common electrode is formed on the upper plate corresponding to the thin film transistor substrate, a projection pattern is formed on the common electrode, and a black matrix is formed in a region corresponding to the outside of the display area of the thin film transistor substrate.

Next, a method of manufacturing a thin film transistor substrate for a liquid crystal display according to a second exemplary embodiment of the present invention will be described with reference to FIGS. 10A to 13B and FIGS. 8 and 9.

First, as shown in FIGS. 10A and 10B, a gate wiring conductor or a metal is deposited on the insulating substrate 10 and patterned by photolithography to form the gate line 21, the gate electrode 22, and the gate pad 23. A storage wiring including the gate wiring and the storage capacitor line 25, the storage capacitor electrodes 261 and 262, and the storage capacitor branch lines 271 and 272 are formed.

Next, as shown in FIGS. 11A and 11B, the gate insulating layer 30, the amorphous silicon layer, and the amorphous silicon layer doped with n-type impurities are sequentially deposited, and the upper two layers are patterned by a photolithography process to form the semiconductor layer 41. ) And an ohmic contact layer 51.

Next, as shown in FIGS. 12A and 12B, a conductor or a metal for data wiring is deposited and patterned by a photolithography process to form the data line 61, the source electrode 62, the drain electrode 63, and the data pad 64. A data wiring is formed. Next, the ohmic contact layer 51 not covered by the source electrode 62 and the drain electrode 63 is removed to separate the two portions 52 and 53.

Next, as shown in FIGS. 13A and 13B, photosensitive resins containing red, green, and blue pigments are coated and photographed to form color filters 11 in the vertical direction in the form of stripes. At this time, the color filter 11 is formed by applying a photosensitive resin for each color and photo developing three times as described in the first embodiment, wherein the red, green, and blue color filters 11 are formed. The order in which you do this may change. Next, the color filter 11 is patterned by a photolithography process to form a contact hole 72 exposing the drain electrode 63, and the contact hole 73 exposing the gate pad 23 by removing the gate insulating layer 30. To form. At this time, the data pad 64 is already exposed.

Next, as shown in FIGS. 8 and 9, a transparent conductive material, such as ITO or IZO, is deposited and patterned by a photolithography process, thereby forming the pixel electrode 80, the auxiliary gate pad 83, and the auxiliary data pad 84. Form.                     

On the other hand, when the overcoat film is formed on the color filter 11, the overcoat film is also formed on the gate pad 23 and the data pad 64, so that when the contact hole 72 exposing the drain electrode 63 is formed, Remove all the color filters 11. In addition, the overcoat film and the gate insulating film 30 are removed to form a contact hole 73 exposing the gate pad 23, and the overcoat film is removed to form a contact hole exposing the data pad 64.

As described above, in the first and second embodiments of the present invention, the storage capacitor wirings 25, 261, 262, 271, and 272 and the pixel electrode 80 overlap with the insulating film to form the storage capacitor. The gate line 21 and the pixel electrode 80 at the front end may overlap each other with the insulating film interposed therebetween, thereby forming a storage capacitor.

As described above, in the present invention, the pixel electrode overlaps the gate line, the front gate line, and the data line to prevent light leakage, and a color filter and a black matrix are formed on the thin film transistor substrate to prevent loss of aperture ratio due to misalignment of the lower and upper plates. The transmittance can be improved. In addition, since the alignment key pattern is formed on the top plate with the same layer as the protrusion pattern without separately performing the process for forming the alignment key pattern, the number of processes can be reduced.

Claims (19)

A color filter formed on an insulating substrate, A gate wiring including a gate line formed on the insulating substrate and a gate pad connected to the gate line; A storage capacitor wiring including a storage capacitor line formed of the same layer as the gate wiring and positioned between the gate lines, a storage capacitor electrode connected to the storage capacitor line, and a storage capacitor branch line that is a branch of the storage capacitor electrode. , A data line including a data line insulated from and intersecting the gate line and defining a pixel area, and a data pad connected to the data line; A protective film formed on the data wiring, A pixel electrode formed on the passivation layer and overlapping a portion of the data line Thin film transistor substrate for a liquid crystal display device comprising a. In claim 1, The color filter is formed in the pixel area and overlaps a portion of the data line. In claim 1, And a side parallel to the data line of the pixel electrode is located in an overlapping surface of the data line and the color filter. In claim 1, The substrate is divided into a display area in which a plurality of pixel areas are gathered, and a pad part in which the gate pad and the data pad are located, and further comprising a black matrix formed between the display area and the pad part. Thin film transistor substrate. In claim 1, A thin film transistor substrate for liquid crystal display device, further comprising an overcoat film covering the color filter. In claim 1, And the pixel electrode has an opening overlapping the storage capacitor branch line. In claim 1, And an auxiliary gate pad and an auxiliary data pad formed on the same layer as the pixel electrode and connected to the gate pad and the data pad, respectively. Forming a black matrix on the insulating substrate, Forming a color filter on the insulating substrate, Forming a gate line and a storage capacitor line on the insulating substrate, the gate line including a gate line and a gate pad connected to the gate line; Forming a gate insulating film covering the gate wiring and the storage capacitor wiring; Forming a semiconductor layer on the gate insulating film, Forming an ohmic contact layer over the semiconductor layer; Forming a data line on the ohmic contact layer, the data line including a data line and a data pad connected to the data line; Forming a passivation layer on the data line; Forming a pixel electrode overlapping a portion of the data line Including; A method of manufacturing a thin film transistor substrate for a liquid crystal display device, wherein the black matrix is formed between a pad portion where the gate pad and the data pad are formed and a display region where the pixel electrode is formed. In claim 8, And the color filter overlaps the data line, and the side of the color filter is parallel to the data line of the pixel electrode in an overlapping surface formed by the color filter and the data line. In claim 8, And forming an overcoat layer after forming the color filter. In claim 8, And the pixel electrode overlaps the gate line. A gate wiring including a gate line formed on an insulating substrate and a gate pad connected to the gate line; A storage capacitor wiring including a storage capacitor line formed of the same layer as the gate wiring and positioned between the gate lines, a storage capacitor electrode connected to the storage capacitor line, and a storage capacitor branch line that is a branch of the storage capacitor electrode. , A data line including a data line insulated from and intersecting the gate line and defining a pixel area, and a data pad connected to the data line; A color filter formed in the pixel region of the insulating substrate and overlapping a portion of the data line; A pixel electrode formed on the color filter Thin film transistor substrate for a liquid crystal display device comprising a. In claim 12, And a side parallel to the data line of the pixel electrode is located in an overlapping surface of the data line and the color filter. In claim 12, A thin film transistor substrate for liquid crystal display device further comprising an overcoat film formed between the color filter and the pixel electrode. In claim 12, And the pixel electrode has an opening overlapping the storage capacitor branch line. In claim 12, And a second gate pad and an auxiliary data pad formed on the same layer as the pixel electrode and connected to the gate pad and the data pad, respectively. Forming a gate line and a storage capacitor line including a gate line and a gate pad connected to the gate line on an insulating substrate; Forming a gate insulating film covering the gate wiring and the storage capacitor wiring; Forming a semiconductor layer on the gate insulating film, Forming an ohmic contact layer over the semiconductor layer; Forming a data line on the ohmic contact layer, the data line including a data line and a data pad connected to the data line; Forming a color filter, Forming a pixel electrode on the color filter, the pixel electrode overlapping a portion of the data line Method of manufacturing a thin film transistor substrate for a liquid crystal display device comprising a. The method of claim 17, And the color filter overlaps the data line, and the side of the color filter is parallel to the data line of the pixel electrode in an overlapping surface formed by the color filter and the data line. The method of claim 17, And forming an overcoat layer after forming the color filter.

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