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KR100710182B1 - light blocking layer CMOS image sensor and method for manufacturing the same - Google Patents

light blocking layer CMOS image sensor and method for manufacturing the same Download PDF

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KR100710182B1
KR100710182B1 KR1020040117222A KR20040117222A KR100710182B1 KR 100710182 B1 KR100710182 B1 KR 100710182B1 KR 1020040117222 A KR1020040117222 A KR 1020040117222A KR 20040117222 A KR20040117222 A KR 20040117222A KR 100710182 B1 KR100710182 B1 KR 100710182B1
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photosensitive device
region
diffusion region
semiconductor substrate
image sensor
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KR20060077704A (en
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황준
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동부일렉트로닉스 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide

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Abstract

본 발명은 광감지 소자 영역을 제외한 영역에 광차폐층을 형성하여 광에너지(light energy)에 의한 누설전류를 방지하여 암신호 노이즈(dark signal noise)가 감소시켜 조도특성이 개선한 반도체 시모스 이미지 센서의 광차폐층 및 그의 제조방법에 관한 것으로, 반도체 기판에 다수의 트랜지스터의 게이트전극을 형성하는 단계; 광감지 소자영역과 상기 게이트전극 양층의 상기 반도체 기판에 제 1 도전형의 확산영역을 형성하는 단계; 상기 광감지 소자영역의 상기 제 1 도전형의 확산영역 상에 제 2 도전형의 확산영역을 형성하는 단계; 상기 반도체 기판 상에 상기 광감지 소자영역이 개구되는 광차폐층을 형성하는 단계를 포함하는 것을 특징으로 한다.The present invention forms a light shielding layer in a region excluding the photosensitive device region to prevent leakage current due to light energy, thereby reducing dark signal noise, thereby improving illuminance characteristics. A light shielding layer of the present invention and a method for manufacturing the same, the method comprising: forming gate electrodes of a plurality of transistors on a semiconductor substrate; Forming a diffusion region of a first conductivity type in the photosensitive device region and the semiconductor substrate in both the gate electrode layers; Forming a diffusion region of a second conductivity type on the diffusion region of the first conductivity type of the photosensitive device region; And forming a light shielding layer in which the photosensitive device region is opened on the semiconductor substrate.

시모스 이미지 센서, 조도, 광차폐막CMOS image sensor, illuminance, light shielding

Description

시모스 이미지 센서의 광차폐층 및 그의 제조방법{light blocking layer CMOS image sensor and method for manufacturing the same} Light shielding layer of CMOS image sensor and its manufacturing method {light blocking layer CMOS image sensor and method for manufacturing the same}

도 1은 종래기술의 4 개의 트랜지스터를 가지는 시모스 이미지 센서의 단위 화소 회로도1 is a unit pixel circuit diagram of a CMOS image sensor having four transistors of the prior art.

도 2는 종래기술의 시모스 이미지 센서의 단위화소에 대한 단면도2 is a cross-sectional view of a unit pixel of a CMOS image sensor of the related art.

도 3 내지 도 4는 본 발명에 따른 시모스 이미지 센서의 단위화소에 대한 공정단면도3 to 4 are process cross-sectional views of a unit pixel of the CMOS image sensor according to the present invention.

도면의 주요 부분에 대한 부호의 설명Explanation of symbols for the main parts of the drawings

210 : 기판 211 : 에피층210: substrate 211: epi layer

213 : 저농도 N 형 확산영역 217 : 고농도 N 형 확산영역 213: low concentration N type diffusion region 217: high concentration N type diffusion region

214 : 트랜스퍼 트랜지스터의 게이트전극214: gate electrode of the transfer transistor

215 : 드라이브 트랜지스터의 게이트전극 215: gate electrode of the drive transistor

220 : 광감지 소자 영역 221 :플로팅 확산영역 220: photosensitive device region 221: floating diffusion region

본 발명은 시모스 이미지 센서 및 그의 제조방법에 관한 것으로, 특히 광감 지 소자 영역을 제외한 영역에 광차폐층을 형성하여 광에너지(light energy)에 의한 누설전류를 방지하여 암신호 노이즈(dark signal noise)가 감소시켜 조도특성이 개선한 시모스 이미지 센서의 광차폐층 및 그의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CMOS image sensor and a method of manufacturing the same. In particular, a light shielding layer is formed in a region excluding the photosensitive device region to prevent leakage current due to light energy, thereby dark signal noise. The present invention relates to a light shielding layer of a CMOS image sensor having a reduced illumination property and a method of manufacturing the same.

일반적으로 이미지 센서는 광학 영상(optical image)을 전기신호로 변환시키는 반도체 소자로써, 개별 모스(MOS:metal-oxide-silicon) 캐패시터(capacitor)가 서로 매우 근접한 위치에 있으면서 전하캐리어가 캐패시터에 저장되고 이송되는 이중결합소자(CCD:charge coupled device)와 제어회로(control circuit) 및 신호처리회로(signal processing circuit)를 주변회로에 사용하는 시모스(CMOS)기술을 이용하여 화소수 만큼 모스 트랜지스터를 만들고 이것을 이용하여 차례차례 출력을 검출하는 스위칭 방식을 채용한 시모스(CMOS:complementary MOS) 이미지 센서가 있다.In general, an image sensor is a semiconductor device that converts an optical image into an electrical signal, in which charge carriers are stored in a capacitor while individual metal-oxide-silicon (MOS) capacitors are located in close proximity to each other. By using CMOS technology, which uses a charged coupled device (CCD), a control circuit, and a signal processing circuit as peripheral circuits, a MOS transistor is made by the number of pixels, and this is There is a complementary MOS (CMOS) image sensor that employs a switching scheme that detects the output sequentially.

그리고 피사체의 정보를 전기적인 신호로 변환하는 시모스 이미지 센서는 포토다이오드가 들어있는 시그날 처리칩 들로 구성되어 있으며, 칩 하나에 증폭기(Amplifier), 아날로그/디지탈 변환기(A/D converter), 내부 전압 발생기(Internal voltage generator), 타이밍 제너레이터(Timing generator) 그리고 디지털 로직(Digital logic) 등이 결합되기도 하는데, 이는 공간과 전력 그리고 비용절감에 큰 장점을 갖고 있다. 이중결합소자(CCD)가 전문공정을 통하여 제조하지만, 시모스 이미지 센서는 이중결합소자보다 가격이 저렴한 실리콘 웨이퍼(Wafer)의 식각 공정을 통하여 대량생산이 가능하며, 집적도에서도 장점이 있다. In addition, the CMOS image sensor that converts the information of the subject into an electrical signal is composed of signal processing chips containing a photodiode, and an amplifier, an analog / digital converter, and an internal voltage are included in one chip. Generators such as internal voltage generators, timing generators, and digital logic can also be combined, which greatly reduces space, power, and cost. Although double-coupled devices (CCDs) are manufactured through specialized processes, the CMOS image sensor can be mass-produced through etching process of silicon wafer (Wafer), which is cheaper than double-coupled devices, and has an advantage in integration degree.

시모스 이미지센서는 광감지 소자에서 광에너지(light energy)를 전기적 에 너지(electrical energy)로 변환시켜 광세기(light intensity)를 디지털 이미지(digital image)로 구현하게 되는 데, 광감지 소자이외의 영역에 광에너지가 전달되어 불필요한 노이즈(noise) 신호가 플로팅확산영역 등에서도 발생하여 저저도 특성이 저하되는 문제가 있다.The CMOS image sensor converts light energy into electrical energy in the photosensitive device to realize light intensity as a digital image. There is a problem in that low-low characteristics are deteriorated because optical energy is transmitted to an unwanted noise signal in a floating diffusion region or the like.

이하 첨부된 도면을 참고하여 종래 기술의 시모스 이미지 센서에 대하여 상세하게 설명하면 다음과 같다.Hereinafter, the CMOS image sensor according to the related art will be described in detail with reference to the accompanying drawings.

도 1은 종래기술의 4 개의 트랜지스터를 가지는 시모스 이미지 센서의 단위 화소 회로도이다.1 is a unit pixel circuit diagram of a CMOS image sensor having four transistors of the prior art.

광전하를 생성하는 광감지 소자(100)와 게이트로 Tx 신호를 인가받아 광감지 소자(100)에서 모아진 광전하를 플로팅확산영역(FD)(102)으로 운송하기 위한 트랜스퍼 트랜지스터(transfer transistor)(101)와 게이트로 Rx 신호를 인가받아 원하는 값으로 플로팅확산영역의 전위를 세팅하고 전하를 배출하여 플로팅확산영역(102)을 리셋(reset)시키기 위한 리셋 트랜지스터(reset transistor)(103)와, 게이트로 Dx 신호를 인가받아 소오스 팔로워 버퍼 증폭기(source follower buffer amplifier) 역할을 하는 드라이버 트랜지스터(drive transistor)(104)와, 어드레싱(addressing) 역할을 하는 셀렉트 트랜지스터(select transistor)(105)로 구성된다. A transfer transistor for transporting the photocharges collected from the photosensitive device 100 to the floating diffusion region (FD) 102 by receiving a Tx signal through a gate and a photosensitive device 100 generating a photocharge ( 101 and a reset transistor 103 for resetting the floating diffusion region 102 by setting an electric potential of the floating diffusion region to a desired value by receiving an Rx signal to the gate and discharging electric charge. A driver transistor 104 acts as a source follower buffer amplifier by receiving the Dx signal, and a select transistor 105 serving as an addressing function.

도 2는 종래기술의 시모스 이미지 센서의 단위화소에 대한 단면도이다.2 is a cross-sectional view of a unit pixel of a CMOS image sensor of the related art.

광감지 소자 영역(120)과 플로팅 확산영역(121)으로 구분되며, 고농도 P 형 기판(110) 상에 저농도 P 형의 에피층(111)을 성장시키고, 에피층(111)에 소자간의 격리를 위하여 트렌치를 형성하고 절연막을 충진시키는 STI(shallow trench isolation)(118)을 형성한다. 그리고 에피층(111) 상에 게이트절연막(116)을 형성하고, 게이트절연막(116) 상에 트랜스퍼 트랜지스터의 게이트전극(114)과 리셋 트랜지스터의 게이트전극(115)을 형성한다. The photosensitive device region 120 and the floating diffusion region 121 are divided into a low concentration P-type epitaxial layer 111 on a high concentration P-type substrate 110, and the isolation between devices is formed on the epitaxial layer 111. To form a trench and a shallow trench isolation (STI) 118 is formed to fill the insulating film. The gate insulating film 116 is formed on the epitaxial layer 111, and the gate electrode 114 of the transfer transistor and the gate electrode 115 of the reset transistor are formed on the gate insulating film 116.

광감지소자 영역(120)의 에피층(111)에는 저농도 N 형 확산영역(113)을 형성하고, 트랜스퍼 트랜지스터의 게이트전극(114)과 리셋 트랜지스터의 게이트전극(115) 사이와 리셋 트랜지스터의 게이트전극(115)의 양측의 에피층(111)에는 고농도 N 형 확산영역(117)을 형성한다. 트랜스퍼 트랜지스터의 게이트전극(114)과 리셋 트랜지스터의 게이트전극(115)사이가 플로팅 확산영역(121)이다. A low concentration N-type diffusion region 113 is formed in the epitaxial layer 111 of the photosensitive device region 120, between the gate electrode 114 of the transfer transistor and the gate electrode 115 of the reset transistor and the gate electrode of the reset transistor. High concentration N-type diffusion regions 117 are formed in the epitaxial layers 111 on both sides of the 115. The floating diffusion region 121 is between the gate electrode 114 of the transfer transistor and the gate electrode 115 of the reset transistor.

이와 같은 종래 기술의 시모스 이미지 센서의 제조방법은 다음과 같은 문제가 있다. Such a method of manufacturing a CMOS image sensor of the related art has the following problems.

시모스 이미지센서는 광감지 소자에서 광에너지(light energy)를 전기적 에너지(electrical energy)로 변환시켜 광세기(light intensity)를 디지털 이미지(digital image)로 구현하게 되는 데, 광감지 소자 이외의 영역에 광에너지가 전달되어 불필요한 노이즈(noise) 신호가 플로팅확산영역 등에서도 발생하여 저저도 특성이 저하되는 문제가 있다.The CMOS image sensor converts light energy into electrical energy in the photosensitive device to implement light intensity as a digital image. Since light energy is transmitted, an unnecessary noise signal is generated even in a floating diffusion region, such that low-low characteristics are deteriorated.

본 발명은 이와 같은 종래기술의 시모스 이미지 센서 및 그의 제조방법에 대한 문제를 해결하기 위한 것으로, 광감지 소자 이외의 영역의 표면에 차폐막을 형성하여 노이즈 신호의 발생을 억제하여 이미지 품질을 개선한 시모스 이미지 센 서의 광차폐층 및 그의 제조방법을 제공하는 데 그 목적이 있다. The present invention is to solve such a problem with the conventional CMOS image sensor and its manufacturing method, the CMOS is formed by the shielding film on the surface of the region other than the light sensing element to suppress the generation of noise signal to improve the image quality It is an object of the present invention to provide a light shielding layer of an image sensor and a method of manufacturing the same.

이와 같은 목적을 달성하기 위한 본 발명의 따른 시모스 이미지 센서의 광차폐층은 반도체 기판; 반도체 기판에 형성된 광감지 소자영역; 상기 반도체 기판에 형성된 게이트전극를 포함하는 다수의 트랜지스터; 다수의 트랜지스터를 포함하는 상기 반도체 기판 상에 형성되며 상기 광감지 소자영역이 개구되는 광차폐층을 포함한다.The light shielding layer of the CMOS image sensor of the present invention for achieving the above object is a semiconductor substrate; A photosensitive device region formed on the semiconductor substrate; A plurality of transistors including gate electrodes formed on the semiconductor substrate; And a light shielding layer formed on the semiconductor substrate including a plurality of transistors and opening the photosensitive device region.

또한 본 발명의 시모스 이미지 센서의 광차폐층은 있어서, 상기 광차폐층은 금속실리사이드층인 것을 특징으로 한다.In the light shielding layer of the CMOS image sensor of the present invention, the light shielding layer is a metal silicide layer.

이와 같은 목적을 달성하기 위한 본 발명에 따른 시모스 이미지 센서의 광차폐층 제조방법은 반도체 기판에 다수의 트랜지스터의 게이트전극을 형성하는 단계; 광감지 소자영역과 상기 게이트전극 양층의 상기 반도체 기판에 제 1 도전형의 확산영역을 형성하는 단계; 상기 광감지 소자영역의 상기 제 1 도전형의 확산영역 상에 제 2 도전형의 확산영역을 형성하는 단계; 상기 반도체 기판 상에 상기 광감지 소자영역이 개구되는 광차폐층을 형성하는 단계를 포함하는 것을 특징으로 한다.Method for manufacturing a light shielding layer of the CMOS image sensor according to the present invention for achieving the above object comprises the steps of forming a gate electrode of a plurality of transistors on a semiconductor substrate; Forming a diffusion region of a first conductivity type in the photosensitive device region and the semiconductor substrate in both the gate electrode layers; Forming a diffusion region of a second conductivity type on the diffusion region of the first conductivity type of the photosensitive device region; And forming a light shielding layer in which the photosensitive device region is opened on the semiconductor substrate.

이하 첨부된 도면을 참고하여 본 발명에 따른 시모스 이미지 센서의 광차폐층 및 그의 제조방법에 관하여 상세히 설명하면 다음과 같다. Hereinafter, a light shielding layer of the CMOS image sensor and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

도 3 내지 도 4는 본 발명에 따른 시모스 이미지 센서의 광차폐층에 대한 공정단면도이다.3 to 4 are process cross-sectional views of the light shielding layer of the CMOS image sensor according to the present invention.

도 3과 같이, 광감지 소자 영역(220)과 플로팅 확산영역(221)으로 구분되며, 고농도 P 형 기판(210) 상에 저농도 P 형의 에피층(211)을 성장시키고, 에피층(211)에 소자간의 격리를 위하여 트렌치를 형성하고 절연막을 충진시키는 STI(shallow trench isolation)(218)을 형성한다. 그리고 에피층(211) 상에 게이트절연막(216)을 형성하고, 게이트절연막(216) 상에 트랜스퍼 트랜지스터의 게이트전극(214)과 리셋 트랜지스터의 게이트전극(215)을 형성하고, 광감지소자 영역(220)의 에피층(211)에는 저농도 N 형 확산영역(213)을 형성하고, 트랜스퍼 트랜지스터의 게이트전극(214)과 리셋 트랜지스터의 게이트전극(215) 사이와 리셋 트랜지스터의 게이트전극(215)의 양측의 에피층(211)에는 고농도 N 형 확산영역(217)을 형성한다. 트랜스퍼 트랜지스터의 게이트전극(214)과 리셋 트랜지스터의 게이트전극(215)사이가 플로팅 확산영역(221)이다. As shown in FIG. 3, the light sensing element region 220 and the floating diffusion region 221 are divided, and the epitaxial layer 211 having the low concentration P type is grown on the high concentration P type substrate 210, and the epi layer 211 is formed. A shallow trench isolation (STI) 218 is formed in the trench to form isolation between the elements and to fill the insulating layer. The gate insulating film 216 is formed on the epitaxial layer 211, the gate electrode 214 of the transfer transistor and the gate electrode 215 of the reset transistor are formed on the gate insulating film 216, and the photosensitive device region ( A lightly doped N-type diffusion region 213 is formed in the epitaxial layer 211 of 220, between the gate electrode 214 of the transfer transistor and the gate electrode 215 of the reset transistor and both sides of the gate electrode 215 of the reset transistor. A high concentration N type diffusion region 217 is formed in the epitaxial layer 211. The floating diffusion region 221 is between the gate electrode 214 of the transfer transistor and the gate electrode 215 of the reset transistor.

도 4와 같이, 에피층(211)에 금속층(도시하지 않음)을 형성하고, 광감지 소자영역(220)의 금속층을 제거하고, 열처리하여 광감지 소자영역(220)을 제외한 영역에 자기정열되는 실리사이드층(silicide layer)(222)을 형성한다. 실리사이드층(222)은 광차폐막으로 사용되며, 특히 플로팅 확산영역(221)에 광에너지(light energy)에 의한 누설전류를 방지하여 암신호 노이즈(dark signal noise)가 감소된다.As shown in FIG. 4, a metal layer (not shown) is formed on the epitaxial layer 211, the metal layer of the photosensitive device region 220 is removed, and heat-treated to self-align the region except the photosensitive device region 220. A silicide layer 222 is formed. The silicide layer 222 is used as a light shielding layer, and in particular, dark signal noise is reduced by preventing leakage current due to light energy in the floating diffusion region 221.

이와 같은 본 발명에 따른 시모스 이미지 센서의 광차폐층 및 그의 제조 방법은 다음과 같은 효과가 있다.Such a light shielding layer of the CMOS image sensor according to the present invention and a manufacturing method thereof have the following effects.

광감지 소자영역을 제외한 다른 영역, 특히 플로팅 확산영역의 표면에 광차 폐막을 형성하여 광에너지(light energy)에 의한 누설전류를 방지하여 암신호 노이즈(dark signal noise)가 감소시키고, 이로 인해 조도특성이 개선되는 효과가 있다. The light shielding film is formed on the surface of the floating diffusion region except for the light sensing element region to prevent leakage current due to light energy, thereby reducing the dark signal noise, thereby resulting in roughness characteristics. This has the effect of being improved.

Claims (4)

광감지 소자영역과 플로팅 확산영역으로 정의된 반도체 기판;A semiconductor substrate defined by a photosensitive device region and a floating diffusion region; 상기 반도체 기판상에 게이트 절연막을 개재하여 형성된 다수의 게이트 전극;A plurality of gate electrodes formed on the semiconductor substrate via a gate insulating film; 상기 반도체 기판의 광감지 소자영역에 형성되는 제 1 도전형 확산영역;A first conductivity type diffusion region formed in the photosensitive device region of the semiconductor substrate; 상기 반도체 기판의 플로팅 확산영역에 형성되는 제 2 도전형 확산영역;A second conductivity type diffusion region formed in the floating diffusion region of the semiconductor substrate; 상기 광감지 소자영역을 제외한 각 게이트 전극 상부 및 플로팅 확산영역에 형성되는 금속 실리사이드층을 포함하는 시모스 이미지 센서의 광차폐층.And a metal silicide layer formed on the gate electrode and the floating diffusion region except for the photosensitive device region. 삭제delete 광감지 소자영역과 플로팅 확산영역으로 정의된 반도체 기판상에 게이트 절연막을 개재하여 다수의 게이트 전극을 형성하는 단계;Forming a plurality of gate electrodes on the semiconductor substrate defined by the photosensitive device region and the floating diffusion region through a gate insulating film; 상기 반도체 기판의 광감지 소자영역에 제 1 도전형 확산영역을 형성하는 단계;Forming a first conductivity type diffusion region in the photosensitive device region of the semiconductor substrate; 상기 광감지 소자영역을 제외한 상기 각 게이트 전극 양측의 반도체 기판에 제 2 도전형 확산영역을 형성하는 단계;Forming a second conductivity type diffusion region on the semiconductor substrate on both sides of the gate electrode except for the photosensitive device region; 상기 광감지 소자영역을 제외한 상기 반도체 기판상에 금속 실리사이드층을 형성하는 단계를 포함하는 것을 특징으로 하는 시모스 이미지 센서의 광차폐층 제조방법.And forming a metal silicide layer on the semiconductor substrate except for the photosensitive device region. 삭제delete
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010035260A (en) * 2001-01-30 2001-05-07 안준영 Thin film transistor type fingerprint acquisition device whose light sensing part has light shield layer thereon
KR20010061056A (en) * 1999-12-28 2001-07-07 박종섭 Method for fabricating image sensor with improved light sensitivity
KR20040000877A (en) * 2002-06-26 2004-01-07 동부전자 주식회사 Cmos type image sensor with positive and negative micro-lenses and method for manufacturing same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010061056A (en) * 1999-12-28 2001-07-07 박종섭 Method for fabricating image sensor with improved light sensitivity
KR20010035260A (en) * 2001-01-30 2001-05-07 안준영 Thin film transistor type fingerprint acquisition device whose light sensing part has light shield layer thereon
KR20040000877A (en) * 2002-06-26 2004-01-07 동부전자 주식회사 Cmos type image sensor with positive and negative micro-lenses and method for manufacturing same

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