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KR100560347B1 - Method For Fabricating TFT Fingerprint Input Device Of Fingerprint Recognition Device - Google Patents

Method For Fabricating TFT Fingerprint Input Device Of Fingerprint Recognition Device Download PDF

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KR100560347B1
KR100560347B1 KR1020020017382A KR20020017382A KR100560347B1 KR 100560347 B1 KR100560347 B1 KR 100560347B1 KR 1020020017382 A KR1020020017382 A KR 1020020017382A KR 20020017382 A KR20020017382 A KR 20020017382A KR 100560347 B1 KR100560347 B1 KR 100560347B1
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layer
electrode
depositing
forming
light sensing
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KR20030078372A (en
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채상훈
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테스텍 주식회사
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13318—Circuits comprising a photodetector
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints

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  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)

Abstract

본 발명은, 투명한 기판상에 광감지부 및 스위칭부 게이트 전극을 형성하는 단계와; 투명기판 상면 중앙부 일부와 광감지부 게이트 전극의 일측면상에만 위치하도록 제 2전극을 형성하는 단계와; 투명기판상의 전면에 실리콘 질화막층(SiNx)과 비정질 실리콘층을 순차적으로 증착형성하는 단계와; 게이트 전극들 상에만 위치하도록 활성층 분리 영역을 형성하는 단계와; 실리콘 질화막층의 전면에 데이터 라인층을 증착형성 하는 단계와; 데이터 라인층을 백채널 식각하여 각각 광감지부의 소스전극과 드레인전극 및 스위칭부의 소스전극 및 드레인전극을 형성하되, 상기 광감지부의 소스전극과 드레인전극은 상기 데이터 라인층의 증착 형성전에 ITO(Indium Tin Oxide)막을 먼저 증착 형성한 후 포토리소그래피 공정을 통해 형성하는 단계와; 절연층을 증착 형성하는 단계와; 상기 절연층의 전면상에 차폐층을 증착 형성하는 단계와; 광감지부의 감광층의 상부 부위의 절연층 부분이 노출되도록 형성하는 단계와; 차폐층의 전면상에 패시베이션(passivation)층을 증착하여 형성한다.The present invention includes the steps of forming a light sensing unit and a switching unit gate electrode on a transparent substrate; Forming a second electrode such that the second electrode is positioned only on one side of the central portion of the upper surface of the transparent substrate and the light sensing gate electrode; Sequentially depositing a silicon nitride film layer (SiNx) and an amorphous silicon layer on the entire surface of the transparent substrate; Forming an active layer isolation region to be located only on the gate electrodes; Depositing a data line layer on the entire surface of the silicon nitride film layer; The data line layer is etched back to form a source electrode and a drain electrode of the light sensing unit, and a source electrode and a drain electrode of the switching unit, respectively. Forming a Tin Oxide film by first depositing the same and then forming the film through a photolithography process; Depositing an insulating layer; Depositing and forming a shielding layer on the entire surface of the insulating layer; Forming an insulating layer portion of an upper portion of the photosensitive layer of the photosensitive portion to be exposed; It is formed by depositing a passivation layer on the entire surface of the shielding layer.

TFT 지문입력기, 접촉발광소자, 실질입사영역, 유효입사영역TFT fingerprint input device, contact light emitting device, real incident area, effective incident area

Description

지문인식장치의 ＴＦＴ 지문입력기 제조방법{Method For Fabricating TFT Fingerprint Input Device Of Fingerprint Recognition Device}Method for Fabricating TFT Fingerprint Input Device Of Fingerprint Recognition Device

도 1은 가장 기본적인 TFT 지문입력기의 구조를 나타낸 도면이다.1 is a diagram showing the structure of a most basic TFT fingerprint input device.

도 2a 내지 도 2j는 본 발명에 따른 TFT 지문입력기 제조공정을 순차적으로 나타낸 도면이다.2A to 2J are views sequentially illustrating a process of manufacturing a TFT fingerprint input device according to the present invention.

도 2k는 본 발명에 따른 TFT 지문입력기와 접촉발광소자가 함께 적용된 상태를 나타낸 도면이다.2K is a view showing a state in which a TFT fingerprint input device and a contact light emitting device according to the present invention are applied together.

* 도면의 주요부분에 대한 부호의 설명** Explanation of symbols for the main parts of the drawings *

5: TFT 지문입력기 6: 투명기판5: TFT fingerprint input 6: transparent board

7: 백라이트 8: 스위칭부7: backlight 8: switching unit

8a: 드레인전극 8b: 소스전극8a: drain electrode 8b: source electrode

8c: 광차폐층 9: 광감지부8c: light shielding layer 9: light sensing unit

9a: 드레인전극 9b: 소스전극9a: drain electrode 9b: source electrode

9c: 감광층 10: 제 1전극층9c: photosensitive layer 10: first electrode layer

11: 제 2전극층 12: 질화막층(SiNx)11: second electrode layer 12: nitride layer (SiNx)

본 발명은 지문인식장치의 TFT 지문입력기 제조방법에 관한 것이다.The present invention relates to a method for manufacturing a TFT fingerprint input device of a fingerprint recognition device.

본 발명에 이용되는 종래의 기술로는 접촉발광소자와 씨모스(CMOS: Complementary Metal-Oxide Semiconductor)를 이용한 지문인식기와 a-Si:H의 감광성을 이용한 평면형 박막트랜지스터(thin film transistor: TFT) 지문인식기가 있다.Conventional techniques used in the present invention include a fingerprint reader using a contact light emitting device and CMOS (Complementary Metal-Oxide Semiconductor) and a planar thin film transistor (TFT) fingerprint using photosensitivity of a-Si: H. There is a recognizer.

도 1은 가장 기본적인 TFT 지문입력기의 구조를 나타낸 도면이다.1 is a diagram showing the structure of a most basic TFT fingerprint input device.

도 1에 도시한 바와 같이, 광감지부(9)의 드레인전극(9a)과 소스전극(9b) 사이에는 아모퍼스 실리콘(a-Si:H)등의 감광층(9c)이 형성되어 있어, 이 감광층(9c)으로 소정광량 이상의 빛이 입사되면 드레인전극(9a)과 소스전극(9b)이 전기적으로 도통된다. 이에 따라 지문을 TFT 지문입력기(5)에 대면 투명기판(6) 하부의 백라이트(7)로부터 발생된 빛(light)이 지문패턴에 따라 반사되어 광감지부(9)의 감광층(9c)에 수광됨으로써, 광감지부(9)가 도통된다. As shown in Fig. 1, a photosensitive layer 9c such as amorphous silicon (a-Si: H) is formed between the drain electrode 9a and the source electrode 9b of the photosensitive portion 9, When light having a predetermined amount of light enters into the photosensitive layer 9c, the drain electrode 9a and the source electrode 9b are electrically conducted. Accordingly, when the fingerprint is applied to the TFT fingerprint input device 5, light generated from the backlight 7 under the transparent substrate 6 is reflected according to the fingerprint pattern, and thus is applied to the photosensitive layer 9c of the light sensing unit 9. The light sensing unit 9 is turned on by receiving light.

한편 스위칭부(8)는 게이트전극(8d)에 인가되는 게이트 제어신호에 의해 지문을 스캐닝하도록 설정된 매프레임마다 스위칭 되어, TFT 지문입력기(5)에 입력되는 지문영상을 배열된 각 광감지부(9)별로 스캐닝 한 프레임으로 형성토록 하는 역할을 하므로 스위칭부(8)에는 외부광이 입사되지 못하도록 드레인전극(8a)과 소스전극(8b)에 광차폐층(8c)이 덮혀있다. 미설명부호 9d는 광감지부의 게이트전극이고, 미설명부호 10은 제 1전극층이다.On the other hand, the switching unit 8 is switched every frame set to scan the fingerprint by a gate control signal applied to the gate electrode 8d, and the respective light sensing units arranged to arrange the fingerprint image input to the TFT fingerprint input unit 5 ( 9) the light shielding layer 8c is covered with the drain electrode 8a and the source electrode 8b so that external light is not incident on the switching unit 8 because the scanning frame is formed to be scanned by each frame. Reference numeral 9d denotes a gate electrode of the light sensing unit, and reference numeral 10 denotes a first electrode layer.

종래의 TFT 지문입력기에서는 광감지부(9)의 감광층(9c)의 유효감지영역은 드레인전극(9a)과 소스전극(9b)사이에 노출된 감광층(9c)의 면적만큼 이겠지만, 실제로 광입사층에 입사되는 지문반사광의 실질 입사영역은 이보다 훨씬 넓어진다. 즉, 지문으로부터 반사된 빛이 산란되어 감광층(9c)에 도달하기 때문에 매우 넓은 각도로 입사될 수 있는 것이다. 특히, 다수의 광감지부(9)가 배열되는 구조에서 인접한 광감지부(9)사이에 중첩된 실질 입사영역에서 지문이 입력되는 경우에는 지문패턴의 해상도가 저하되는 문제점이 있다. In the conventional TFT fingerprint input device, the effective sensing area of the photosensitive layer 9c of the photosensitive unit 9 will be as much as the area of the photosensitive layer 9c exposed between the drain electrode 9a and the source electrode 9b. The actual incident region of the fingerprint reflective light incident on the incident layer is much wider than this. That is, since the light reflected from the fingerprint is scattered and reaches the photosensitive layer 9c, it can be incident at a very wide angle. In particular, in the structure in which the plurality of light sensing units 9 are arranged, when a fingerprint is input in the real incident region overlapping between adjacent light sensing units 9, the resolution of the fingerprint pattern is deteriorated.

렌즈(2)와 프리즘을 사용하는 광학식과는 달리, 평면형 지문인식기인 무 렌즈 TFT방식에서는 렌즈(2)나 프리즘으로써 실질 입사영역을 줄이는 일이 쉽지 않은 문제점이 있다.Unlike the optical system using the lens 2 and the prism, it is difficult to reduce the real incident area by the lens 2 or the prism in the lensless TFT method, which is a planar fingerprint reader.

상기한 바와 같은 종래 기술에서의 문제점을 해결하기 위한 본 발명의 목적은 접촉발광소자와 함께 이용하여 해상도가 높은 지문패턴을 얻을 수 있도록 된 지문인식장치의 TFT 지문입력기 제조방법을 제공하는 것이다.An object of the present invention for solving the problems in the prior art as described above is to provide a method for manufacturing a TFT fingerprint input device of a fingerprint recognition device that can be used in conjunction with the contact light emitting device to obtain a high-resolution fingerprint pattern.

본 발명의 다른 목적은 접촉발광 소자와 함께 이용하여 실질입사영역을 유효감지영역과 일치하도록 줄일 수 있는 지문인식장치의 TFT 지문입력기 제조방법을 제공하는 것이다.Another object of the present invention is to provide a method for manufacturing a TFT fingerprint input device of a fingerprint recognition device which can be used together with a light emitting device to reduce the actual incident area to match the effective detection area.

상기한 바와 같은 목적을 달성하기 위하여, 본 발명에 따르면, 투명한 기판상에 광감지부 및 스위칭부 게이트 전극을 형성하는 단계와; 투명기판 상면 중앙부 일부와 광감지부 게이트 전극의 일측면상에만 위치하도록 제 2전극을 형성하는 단 계와; 투명기판상의 전면에 실리콘 질화막층(SiNx)과 비정질 실리콘층을 순차적으로 증착형성하는 단계와; 게이트 전극들 상에만 위치하도록 활성층 분리 영역을 형성하는 단계와; 실리콘 질화막층의 전면에 데이터 라인층을 증착형성 하는 단계와; 데이터 라인층을 백채널 식각하여 각각 광감지부의 소스전극과 드레인전극 및 스위칭부의 소스전극 및 드레인전극을 형성하되, 상기 광감지부의 소스전극과 드레인전극은 상기 데이터 라인층의 증착 형성전에 ITO(Indium Tin Oxide)막을 먼저 증착 형성한 후 포토리소그래피 공정을 통해 형성하는 단계와; 절연층을 증착 형성하는 단계와; 상기 절연층의 전면상에 차폐층을 증착 형성하는 단계와; 광감지부의 감광층의 상부 부위의 절연층 부분이 노출되도록 형성하는 단계와; 차폐층의 전면상에 패시베이션(passivation)층을 증착하여 형성하는 것을 특징으로 하는 지문입력장치의 TFT 지문입력기의 제조방법이 제공된다.In order to achieve the above object, according to the present invention, forming a light sensing unit and a switching unit gate electrode on a transparent substrate; Forming a second electrode such that the second electrode is positioned only on a portion of a central portion of the upper surface of the transparent substrate and on one side of the photosensitive gate electrode; Sequentially depositing a silicon nitride film layer (SiNx) and an amorphous silicon layer on the entire surface of the transparent substrate; Forming an active layer isolation region to be located only on the gate electrodes; Depositing a data line layer on the entire surface of the silicon nitride film layer; The data line layer is etched back to form a source electrode and a drain electrode of the light sensing unit, and a source electrode and a drain electrode of the switching unit, respectively. Forming a Tin Oxide film by first depositing the same and then forming the film through a photolithography process; Depositing an insulating layer; Depositing and forming a shielding layer on the entire surface of the insulating layer; Forming an insulating layer portion of an upper portion of the photosensitive layer of the photosensitive portion to be exposed; Provided is a method for manufacturing a TFT fingerprint input device of a fingerprint input device, characterized by depositing and forming a passivation layer on the entire surface of the shielding layer.

바람직하게는, 상기 비정질 실리콘 층은 비정질 실리콘층(a-Si:H) 및 n+ 비정질 실리콘층(n+ a-Si:H)을 순차적으로 증착형성하여 이루어진 것을 특징으로 한다.Preferably, the amorphous silicon layer is formed by sequentially depositing an amorphous silicon layer (a-Si: H) and n + amorphous silicon layer (n + a-Si: H).

더욱 바람직하게는, 상기 광감지부에서 광감지부의 감광층의 상면의 절연층이 개방된 상태인 것을 특징으로 한다.More preferably, the insulating layer on the upper surface of the photosensitive layer of the light sensing unit in the light sensing unit is characterized in that the open state.

이하 본 발명에 따른 지문인식장치에 대하여 첨부도면을 참조하여 상세히 설명한다. 도면 중 동일부분에 대하여는 동일한 부호로 설명한다.Hereinafter, a fingerprint recognition device according to the present invention will be described in detail with reference to the accompanying drawings. Like parts in the drawings will be described with like reference numerals.

도 2a 내지 도 2k는 본 발명에 따른 지문입력장치의 TFT 지문입력기의 제조방법을 순차적으로 나타낸 단면도로서, 도 2a에 도시한 바와 같이, 먼저, 소정 두 께의 투명기판(6)상에 Al, Cu 등의 재료로 이루어진 게이트 전극층을 증착하여 일반적인 포토리소그래피(photo lithography)공정을 통하여 게이트 전극(9d),(8d)을 형성한다.2A through 2K are cross-sectional views sequentially illustrating a method for manufacturing a TFT fingerprint input device of the fingerprint input device according to the present invention. As shown in FIG. 2A, first, Al and Cu are formed on a transparent substrate 6 having a predetermined thickness. A gate electrode layer made of a material such as the above is deposited to form the gate electrodes 9d and 8d through a general photo lithography process.

이후, 도 2b에 도시된 바와 같이, 상기 게이트 전극(9d),(8d)을 포함한 투명기판(6) 전면에 캐패시터 전극층을 증착하여 일반적인 포토리소그래피 공정을 통하여 투명기판(6)의 상면 중앙부 일부와 광감지부의 게이트 전극인 상기 게이트 전극(9d)의 일측면상에만 위치하도록 제 2전극(11)을 형성한다.Subsequently, as shown in FIG. 2B, a capacitor electrode layer is deposited on the entire surface of the transparent substrate 6 including the gate electrodes 9d and 8d to form a portion of the upper center portion of the upper surface of the transparent substrate 6 through a general photolithography process. The second electrode 11 is formed to be located only on one side of the gate electrode 9d which is the gate electrode of the light sensing unit.

이후, 도 2c에 도시한 바와 같이, 상기 제 2전극(11) 및 게이트전극(9d) 및 (8d)를 포함한 투명기판(6)상의 전면에 실리콘 질화막층(SiNx)(12)을 증착형성하고, 이후 상기 질화막층(12)상 전면에 비정질 실리콘층(a-Si:H)(13)과, n+ 비정질 실리콘층(n+ a-Si:H)(14)를 순차적으로 증착형성한다.2C, a silicon nitride layer (SiNx) 12 is deposited on the entire surface of the transparent substrate 6 including the second electrode 11 and the gate electrodes 9d and 8d. Subsequently, an amorphous silicon layer (a-Si: H) 13 and an n + amorphous silicon layer (n + a-Si: H) 14 are sequentially deposited on the entire surface of the nitride layer 12.

이후, 도 2d에 도시한 바와 같이, 상기 비정질 실리콘층(13) 및 n+ 비정질 실리콘층(14)를 일반적인 포토리소그래피 공정을 통하여 게이트 전극(9d),(8d) 상에만 위치하도록 활성층 분리(active layer isolation) 영역(14a)을 형성한다.Thereafter, as shown in FIG. 2D, the active layer is separated so that the amorphous silicon layer 13 and the n + amorphous silicon layer 14 are positioned only on the gate electrodes 9d and 8d through a general photolithography process. isolation) region 14a is formed.

이후, 도 2e에 도시된 바와 같이, 상기 활성층 분리 영역(14a)을 포함한 상기 실리콘 질화막층(12)의 전면에 Al등의 재료로 이루어진 데이터 라인층(15)을 증착형성한다.Thereafter, as illustrated in FIG. 2E, a data line layer 15 made of a material such as Al is deposited on the entire surface of the silicon nitride layer 12 including the active layer isolation region 14a.

이후, 도 2f에 도시한 바와 같이, 상기 데이터 라인층(15)을 백채널 식각(back channel etching)하여 각각 광감지부의 소스전극(9b)과 드레인전극(9a) 및 스위칭부의 소스전극(8b) 및 드레인전극(8a)을 형성한다. 상기 광감지부의 소스 전극(9b)과 드레인전극(9a)은 상기 데이터 라인층(15)의 증착 형성전에 ITO(Indium Tin Oxide)막을 먼저 증착 형성한 후 포토리소그래피 공정을 통해 형성한 것이다. 이 상태에서 상기 광감지부에서 광감지부의 감광층(9c)의 상면이 개방(open)된 상태임을 알 수 있다. 이로 인해 빛에 대한 민감도가 증가한다.Subsequently, as illustrated in FIG. 2F, the data line layer 15 is back channel-etched, so that the source electrode 9b and the drain electrode 9a and the source electrode 8b of the light sensing unit are respectively back channel-etched. And a drain electrode 8a. The source electrode 9b and the drain electrode 9a of the light sensing unit are formed by first depositing an indium tin oxide (ITO) film prior to depositing the data line layer 15 and then performing a photolithography process. In this state, it can be seen that the upper surface of the photosensitive layer 9c of the light sensing unit is opened in the light sensing unit. This increases the sensitivity to light.

이후, 도 2g에 도시된 바와 같이, 상기 광감지부의 소스전극(9b)와 드레인전극(9a) 및 스위칭부의 소스전극(8b) 및 드레인전극(8a)을 포함한 전면상에 절연층(16)을 증착 형성한다.Thereafter, as shown in FIG. 2G, the insulating layer 16 is formed on the entire surface including the source electrode 9b and the drain electrode 9a of the light sensing unit and the source electrode 8b and the drain electrode 8a of the switching unit. Vapor deposition.

이후, 도 2h에 도시된 바와 같이, 상기 절연층(16)의 전면상에 차폐층(17)을 증착 형성한다.Thereafter, as illustrated in FIG. 2H, the shielding layer 17 is deposited on the entire surface of the insulating layer 16.

이후, 도 2i에 도시된 바와 같이, 일반적인 포토리소그래피 공정을 통해 상기 차폐층(17)의 일부를 식각하여 상기 광감지부의 감광층(9c)의 상부 부위의 절연층(16) 부분이 노출되도록 형성한다.Subsequently, as shown in FIG. 2I, a portion of the shielding layer 17 is etched through a general photolithography process to expose a portion of the insulating layer 16 at an upper portion of the photosensitive layer 9c of the light sensing unit. do.

이후, 도 2j에 도시된 바와 같이, 상기 노출된 절연층(16) 부분을 포함하여 차폐층(17)의 전면상에 패시베이션(passivation)층(18)을 증착 형성함으로서 본 발명의 일실시예에 따른 TFT 지문입력기의 제조과정이 완성된다.Then, as shown in FIG. 2J, one embodiment of the present invention by depositing and forming a passivation layer 18 on the entire surface of the shielding layer 17 including the exposed portion of the insulating layer 16. The manufacturing process of the TFT fingerprint input device is completed.

도 2k는 상기와 같이 제조된 TFT 지문입력기와 접촉발광소자(1)를 나타낸 것으로서, 본 발명에 따른 TFT 지문입력기는 접촉발광소자와 함께 사용됨으로써 소정의 효과를 달성할 수 있다.2K shows the TFT fingerprint input device and the touch light emitting device 1 manufactured as described above, and the TFT fingerprint input device according to the present invention can be used together with the touch light emitting device to achieve a predetermined effect.

이상 설명한 바와 같이 본 발명에 따른 지문인식장치 TFT 지문입력기 제조방 법에 따르면, 광감지부의 감광층을 제외한 영역에 차폐층을 형성함으로써 보다 높은 해상도의 지문인식을 할 수 있는 효과가 있고, 아울러 접촉발광소자와 함께 사용함으로써 종래 TFT 지문입력기보다 입사되는 실질입사영역을 유효 감지영역과 일치하도록 줄일 수 있으므로 질 좋은 지문영상이 얻어지는 효과가 있다.As described above, according to the method of manufacturing a fingerprint reader TFT fingerprint input device according to the present invention, by forming a shielding layer in a region excluding the photosensitive layer of the light sensing unit, fingerprint recognition with a higher resolution can be achieved, and contact is also possible. By using it together with the light emitting device, the actual incident area incident to the conventional TFT fingerprint input unit can be reduced to match the effective detection area, so that a good fingerprint image can be obtained.

또한 접촉발광소자와 TFT 지문입력기를 이용함으로써 발광이미지가 직접 TFT 광감지부에 전달되기 때문에 TFT 광감지부와 스위칭부 사이의 간격(W)을 줄일 수 있으므로 해상도가 높은 지문이미지를 얻을 수 있는 효과가 있다.In addition, since the light emitting image is directly transmitted to the TFT light sensing unit by using the contact light emitting device and the TFT fingerprint input unit, the distance W between the TFT light sensing unit and the switching unit can be reduced, so that a high resolution fingerprint image can be obtained. There is.

Claims (3)

소정 두께의 투명한 기판상에 광감지부 및 스위칭부 게이트 전극을 형성하는 단계와;Forming a light sensing unit and a switching unit gate electrode on a transparent substrate having a predetermined thickness; 상기 게이트 전극들을 포함한 투명기판 상면 중앙부 일부와 상기 광감지부 게이트 전극의 일측면상에만 위치하도록 제 2전극을 형성하는 단계와;Forming a second electrode such that the second electrode is positioned only on a portion of a central upper surface of the transparent substrate including the gate electrodes and on one side of the light sensing gate electrode; 상기 제 2전극 및 게이트전극들을 포함한 투명기판상의 전면에 실리콘 질화막층(SiNx)과 비정질 실리콘층을 순차적으로 증착형성하는 단계와;Sequentially depositing a silicon nitride layer (SiNx) and an amorphous silicon layer on the entire surface of the transparent substrate including the second electrode and the gate electrodes; 상기 비정질 실리콘층들을 포토리소그래피 공정을 통해 상기 게이트 전극들 상에만 위치하도록 활성층 분리 영역을 형성하는 단계와;Forming an active layer isolation region such that the amorphous silicon layers are located only on the gate electrodes through a photolithography process; 상기 활성층 분리 영역을 포함한 상기 실리콘 질화막층의 전면에 데이터 라인층을 증착형성 하는 단계와;Depositing a data line layer on the entire surface of the silicon nitride layer including the active layer isolation region; 상기 데이터 라인층을 백채널 식각하여 각각 광감지부의 소스전극과 드레인전극 및 스위칭부의 소스전극 및 드레인전극을 형성하되, 상기 광감지부의 소스전극과 드레인전극은 상기 데이터 라인층의 증착 형성전에 ITO(Indium Tin Oxide)막을 먼저 증착 형성한 후 포토리소그래피 공정을 통해 형성하여 이루어진 단계와;The data line layer is back channel-etched to form a source electrode and a drain electrode of the light sensing unit, and a source electrode and a drain electrode of the switching unit, respectively, wherein the source electrode and the drain electrode of the light sensing unit are formed before the deposition of the data line layer. An Indium Tin Oxide) film is first deposited and then formed through a photolithography process; 상기 광감지부의 소스전극과 드레인전극 및 스위칭부의 소스전극 및 드레인전극을 포함한 전면상에 절연층을 증착 형성하는 단계와;Depositing an insulating layer on the entire surface including the source electrode and the drain electrode of the light sensing unit and the source electrode and the drain electrode of the switching unit; 상기 절연층의 전면상에 차폐층을 증착 형성하는 단계와;Depositing and forming a shielding layer on the entire surface of the insulating layer; 포토리소그래피 공정을 통해 상기 차폐층의 일부를 식각하여 상기 광감지부의 감광층의 상부 부위의 절연층 부분이 노출되어 개방되도록 형성하는 단계와;Etching a portion of the shielding layer through a photolithography process to form a portion of the insulating layer in an upper portion of the photosensitive layer of the light sensing unit so as to be exposed; 상기 노출된 절연층 부분을 포함하여 상기 차폐층의 전면상에 패시베이션(passivation)층을 증착 형성하는 단계로 구성되며, Depositing a passivation layer on the entire surface of the shielding layer, including the exposed insulating layer portion, 상기 패시베이션층 위에 접촉발광소자가 설치되는 것을 특징으로 하는 지문입력장치의 TFT 지문입력기의 제조방법.And a contact light emitting device is provided on the passivation layer. 삭제delete 삭제delete
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