KR100230983B1 - Gas distribution plate of dry etching apparatus for semiconductor - Google Patents
Gas distribution plate of dry etching apparatus for semiconductor Download PDFInfo
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- KR100230983B1 KR100230983B1 KR1019960020098A KR19960020098A KR100230983B1 KR 100230983 B1 KR100230983 B1 KR 100230983B1 KR 1019960020098 A KR1019960020098 A KR 1019960020098A KR 19960020098 A KR19960020098 A KR 19960020098A KR 100230983 B1 KR100230983 B1 KR 100230983B1
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- Prior art keywords
- gas distribution
- distribution plate
- gas
- process chamber
- etching
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000001312 dry etching Methods 0.000 title description 5
- 239000007789 gas Substances 0.000 claims abstract description 74
- 238000000034 method Methods 0.000 claims abstract description 35
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 20
- 239000002245 particle Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
반도체 건식식각설비의 공정챔버덮개에 장착되어 식각가스를 공정챔버 안으로 균일하게 공급하는 반도체 건식식각설비의 가스공급판이 개시되어 있다.A gas supply plate of a semiconductor dry etch facility mounted on a process chamber lid of a semiconductor dry etch facility and uniformly feeding etch gas into the process chamber is disclosed.
본 발명은, 공정챔버덮개에 장착되어 공정챔버 내에 식각가스를 균일하게 분배하기 위한 반도체 건식식각설비의 가스분배판에 있어서, 상기 가스분배판은 부도체원판으로 구성되며 한 측부에는 공정챔버덮개의 가스유입통로와 연결되는 가스유입통로가 형성되어 있고 표면에는 동심원을 이루는 복수의 원형구멍선으로 이루어진 가스분배구멍이 형성되어 있는 것을 특징으로 한다.The present invention relates to a gas distribution plate of a semiconductor dry etch facility mounted on a process chamber lid for uniformly distributing etch gases into a process chamber, the gas distribution plate comprising a non-conductive substrate, A gas inflow passage connected to the inflow passage is formed, and a gas distribution hole formed of a plurality of concentric circular hole lines is formed on the surface.
따라서, 본 발명은 공정챔버 내에서의 아아크 발생과 파티클 발생을 억제하여 식각공정의 신뢰성을 향상시키는 효과가 있다.Therefore, the present invention has the effect of improving the reliability of the etching process by suppressing the generation of the arc and the generation of particles in the process chamber.
Description
제1도는 종래의 가스분배판을 나타내는 단면도이다.FIG. 1 is a cross-sectional view of a conventional gas distribution plate.
제2도는 공정챔버덮개에 장착된 본 발명의 제일 실시예에 따른 가스분배판을 나타내는 단면도이다.FIG. 2 is a cross-sectional view of a gas distribution plate according to a first embodiment of the present invention mounted on a process chamber lid. FIG.
제3도는 공정챔버덮개에 장착된 본 발명의 제2실시예에 따른 가스분배판을 나타내는 단면도이다.3 is a cross-sectional view of a gas distribution plate according to a second embodiment of the present invention mounted on a process chamber lid.
* 도면의 주요부분에 대한 부호설명DESCRIPTION OF REFERENCE NUMERALS
10, 30 : 가스분배판 12, 22, 32 : 가스유입통로10, 30: gas distribution plates 12, 22, 32: gas inlet passage
14 : 제1 관통구멍 16 : 제2 관통구멍14: first through hole 16: second through hole
18, 34 36 : 가스분배구멍 20 : 공정챔버덮개18, 34 36: gas distribution hole 20: process chamber cover
24 : 챔버결합구멍24: chamber coupling hole
본 발명은 반도체 건식식각설비의 가스분배판에 관한 것으로서, 더욱 상세하게는 공정챔버 내에 식각가스를 균일하게 공급하는 가스분배판에 관한 것이다.The present invention relates to a gas distribution plate of a semiconductor dry etching facility, and more particularly to a gas distribution plate that uniformly supplies etching gas into a process chamber.
일반적으로, 반도체 건식식각설비에서는 식각챔버 내에 배치된 두 개의 전극 사이에 식각가스를 공급하고 한쪽 전극에는 고주파 전력을 인가하며 다른 전극은 접지시켜 플라즈마를 형성하여 식각을 진행하는데, 이 때 식각가스는 식각균일도를 향상시키기 위해 챔버 내에 균일하게 공급되어야 하며, 이러한 목적을 위해 가스분배판이 사용된다.Generally, in a semiconductor dry etching system, an etching gas is supplied between two electrodes disposed in an etching chamber, a high frequency power is applied to one electrode, and another electrode is grounded to form a plasma. It must be uniformly supplied into the chamber to improve etching uniformity, and a gas distribution plate is used for this purpose.
건식식각설비에 사용되는 가스분배판은 식각공정시 플라즈마 상태에 노출되기 때문에 식각가스에 의한 표면의 스퍼터링을 감소시키기 위하여 양극화된 알루미늄판을 주로 사용한다.Since the gas distribution plate used in the dry etching equipment is exposed to the plasma state during the etching process, a polarized aluminum plate is mainly used to reduce the surface sputtering by the etching gas.
제1도를 참조하면, 종래의 가스분배판(10)에는 챔버덮개에 고정하기 위한 3 개의 제1 관통구멍(14)과, 가스분배판이 장착된 챔버덮개를 챔버상부면에 결합하기 위한 8 개의 제2 관통구멍(16)이 형성되어 있다.Referring to FIG. 1, a conventional gas distribution plate 10 is provided with three first through holes 14 for fixing to a chamber lid, and eight first through holes 14 for joining a chamber lid equipped with a gas distribution plate to the chamber upper surface. A second through hole 16 is formed.
가스분배판은 먼저 상기 제1 관통구멍(14)을 통해 챔버덮개에 형성된 나사구멍에 나사결합되고 그 다음 상기 챔버덮개는 상기 제2 관통구멍(16)을 통해 챔버상부면에 형성된 나사구멍에 나사결합된다.The gas distribution plate is first screwed into the screw hole formed in the chamber lid through the first through hole 14 and then the chamber lid is screwed into the screw hole formed in the chamber upper surface through the second through hole 16 .
가스분배판(10)의 한쪽에는 식각가스 공급라인이 연결되는 가스유입통로(12)가 형성되어 있으며 식각공정시 가스공급라인으로부터 가스유입통로를 통해 유입된 식각가스는 챔버덮개와 가스분배판(10) 사이의 공간으로 이동하여 가스분배판(10)에 형성된 다수의 가스분배구멍(18)을 통해 식각챔버 내로 공급된다.One side of the gas distribution plate 10 is provided with a gas inflow passage 12 to which an etching gas supply line is connected. The etching gas introduced through the gas inflow passage from the gas supply line during the etching process is supplied to the chamber cover and the gas distribution plate 10 and is supplied into the etching chamber through the plurality of gas distribution holes 18 formed in the gas distribution plate 10. [
그런데, 식각공정에 있어서 플라즈마 상태의 식각가스는 웨이퍼 표면의 여러 막질들과 반응하여 폴리머등의 요염물질을 발생시키며, 발생된 오염물질은 가스분배구멍(18)을 제외한 가스분배판(10)의 전면에 부착됨으로써 고주파 전극의 접지 역할을 해 주어야 하는 가스분배판(10)이 그 기능을 상실하게 되어 폴리머가 부착되지 않은 가스분배판(10)의 가스분배구멍(18) 주변영역에서 아아크가 발생하게 되어 식각공정에 악영향을 미치게 된다.However, in the etching process, the etching gas in a plasma state reacts with various films on the surface of the wafer to generate a colloidal substance such as a polymer. The generated contaminants are removed from the gas distribution plate 10 The function of the gas distribution plate 10, which should be used as a ground for the high-frequency electrode, is lost, and thus the arc is generated in the region around the gas distribution hole 18 of the gas distribution plate 10 to which the polymer is not attached So that the etching process is adversely affected.
따라서, 상기와 같은 아아크 발생의 방지를 위해 주기적으로 산소가스로 세정을 실시하여 가스분배판(10)에 부착된 오염물질을 제거하게 되는데, 이로 인해 가스분배판(10)에서 강제로 분리되는 오염물질은 공정챔버 내의 유동 파티클소스로 작용하여 식각공정시 웨이퍼를 오염시키는 문제점이 있었다.Accordingly, in order to prevent the generation of the arc as described above, the gas is periodically cleaned with oxygen gas to remove contaminants adhered to the gas distribution plate 10, The material acts as a flowing particle source in the process chamber and has the problem of contamination of the wafer during the etching process.
본 발명의 목적은 상기한 바의 아아크 발생 및 파티클 발생을 억제할 수 있는 반도체 건식식각설비의 가스분배판을 제공하는 데 있다.An object of the present invention is to provide a gas distribution plate of a semiconductor dry etching facility capable of suppressing arc generation and particle generation as described above.
상기 목적을 달성하기 위한 본 발명의 반도체 건식식각설비의 가스분배판은, 공정챔버덮개에 장착되어 공정챔버 내에 식각가스를 균일하게 분배하기 위한 가스분배판에 있어서, 상기 가스분배판은 부도체원판으로 구성되며 한 측부에는 공정챔버덮개의 가스유입통로와 연결되는 가스유입통로가 형성되어 있고 표면에는 동심원을 이루는 복수의 원형구멍선으로 이루어진 가스분배구멍이 형성되어 있는 것을 특징으로 한다.According to another aspect of the present invention, there is provided a gas distribution plate for uniformly distributing an etching gas in a process chamber mounted on a process chamber lid, the gas distribution plate comprising: And a gas inflow passage connected to the gas inflow passage of the process chamber cover is formed on one side portion and a gas distribution hole formed of a plurality of concentric circular hole lines is formed on the surface.
상기 부도체원판은 세라믹 재질로 형성되는 것이 바람직하다.The non-conductive base plate is preferably formed of a ceramic material.
이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.
제2도는 본 발명에 따른 가스분배판의 제1 실시예를 나타내는 단면도이다.FIG. 2 is a cross-sectional view showing a first embodiment of a gas distribution plate according to the present invention.
상기 가스분배판(30)은 세라믹원판으로 구성되며 한 측부에는 공정챔버덮개(20)의 가스유입통로(22)와 연결되는 하나의 가스유입통로(32)가 형성되어 있고 표면에는 동심원을 이루는 두 개의 원형구멍선으로 이루어진 가스분배구멍(34)이 형성되어 있다.The gas distribution plate 30 is formed of a ceramic disc and has a gas inflow passage 32 connected to the gas inflow passage 22 of the process chamber cover 20 on one side thereof. A gas distribution hole 34 made of a circular hole line is formed.
상기 가스분배판(30)은 상기 가스유입통로(32)가 공정챔버덮개(20)에 형성된 가스유입통로(22)와 연결되도록 공정챔버덮개(20)에 장착된다.The gas distribution plate 30 is mounted to the process chamber lid 20 such that the gas inlet passage 32 is connected to the gas inlet passage 22 formed in the process chamber lid 20. [
식각공정시 식각가스공급원으로부터 상기 공정챔버덮개(20)에 형성된 가스유입통로(22)를 통해 유입된 식각가스는 두 개의 동심원으로 이루어진 상기 가스분배구멍(34)을 통해 공정챔버 안으로 균일하게 공급된다.The etching gas introduced from the etching gas supply source through the gas inlet passage 22 formed in the process chamber lid 20 is uniformly supplied into the process chamber through the two concentric circular gas distribution holes 34 .
식각공정이 진행되어 상기 가스분배판(30)을 포함한 상기 공정챔버덮개(20)와 공정챔버벽에 폴리머등의 오염물질이 도포됨으로써 상기 공정챔버덮개(20)와 상기 공정챔버벽은 고주파 접지 기능을 상실하여도 아아크가 발생하지 않기 때문에 오염물질 제거를 위한 산소가스 세정을 실시할 필요가 없으며, 따라서 공정챔버 내에 상기 오염물질로 인한 유동 파티클의 발생도 억제할 수 있게 된다.The process chamber cover 20 including the gas distribution plate 30 and the contaminants such as polymer are coated on the wall of the process chamber so that the process chamber lid 20 and the process chamber wall are subjected to a high frequency grounding function It is not necessary to perform the oxygen gas cleaning for removing contaminants, so that the generation of the flow particles due to the contaminants in the process chamber can be suppressed.
제3도는 본 발명의 제2 실시예를 나타내는 도면으로써, 가스분배판(30)에는 동심원 형태로 배열된 작은 구멍들로 이루어진 가스분배구멍(36)이 형성되어 있으며, 이러한 가스분배구멍(36)은 식각가스를 더욱 균일하게 공급할 수 있게 한다.3 shows a second embodiment of the present invention in which the gas distribution plate 30 is formed with a gas distribution hole 36 made up of small holes arranged concentrically, Thereby making it possible to more uniformly supply the etching gas.
따라서, 상기한 바와 같이 구성된 본 발명은 공정챔버 내에서의 아아크 발생과 파티클 발생을 억제하여 식각공정의 신뢰성을 향상시키는 효과가 있다.Therefore, the present invention configured as described above has the effect of improving the reliability of the etching process by suppressing the generation of the arc and the generation of particles in the process chamber.
이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구의 범위에 속함은 당연하다.While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art in light of the above teachings. .
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960020098A KR100230983B1 (en) | 1996-06-05 | 1996-06-05 | Gas distribution plate of dry etching apparatus for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960020098A KR100230983B1 (en) | 1996-06-05 | 1996-06-05 | Gas distribution plate of dry etching apparatus for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR980001720A KR980001720A (en) | 1998-03-30 |
| KR100230983B1 true KR100230983B1 (en) | 1999-11-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960020098A KR100230983B1 (en) | 1996-06-05 | 1996-06-05 | Gas distribution plate of dry etching apparatus for semiconductor |
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| KR (1) | KR100230983B1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6254442A (en) * | 1985-09-03 | 1987-03-10 | Hitachi Electronics Eng Co Ltd | Dry etching process |
| JPS634615A (en) * | 1986-06-25 | 1988-01-09 | Hitachi Tokyo Electron Co Ltd | Apparatus for manufacturing semiconductor device |
| JPH01251735A (en) * | 1988-03-31 | 1989-10-06 | Toshiba Corp | Electrostatic chuck apparatus |
-
1996
- 1996-06-05 KR KR1019960020098A patent/KR100230983B1/en not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6254442A (en) * | 1985-09-03 | 1987-03-10 | Hitachi Electronics Eng Co Ltd | Dry etching process |
| JPS634615A (en) * | 1986-06-25 | 1988-01-09 | Hitachi Tokyo Electron Co Ltd | Apparatus for manufacturing semiconductor device |
| JPH01251735A (en) * | 1988-03-31 | 1989-10-06 | Toshiba Corp | Electrostatic chuck apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR980001720A (en) | 1998-03-30 |
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