KR0170905B1 - 디램 - Google Patents
디램 Download PDFInfo
- Publication number
- KR0170905B1 KR0170905B1 KR1019950039981A KR19950039981A KR0170905B1 KR 0170905 B1 KR0170905 B1 KR 0170905B1 KR 1019950039981 A KR1019950039981 A KR 1019950039981A KR 19950039981 A KR19950039981 A KR 19950039981A KR 0170905 B1 KR0170905 B1 KR 0170905B1
- Authority
- KR
- South Korea
- Prior art keywords
- signal
- cas
- casbar
- dram
- buffer
- Prior art date
Links
- 239000000872 buffer Substances 0.000 claims abstract description 25
- 230000007704 transition Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 12
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 5
- 101100219622 Escherichia coli (strain K12) casC gene Proteins 0.000 description 4
- 101100326871 Escherichia coli (strain K12) ygbF gene Proteins 0.000 description 4
- 101100438439 Escherichia coli (strain K12) ygbT gene Proteins 0.000 description 4
- 101100005249 Escherichia coli (strain K12) ygcB gene Proteins 0.000 description 4
- 101100329497 Thermoproteus tenax (strain ATCC 35583 / DSM 2078 / JCM 9277 / NBRC 100435 / Kra 1) cas2 gene Proteins 0.000 description 4
- 101150000705 cas1 gene Proteins 0.000 description 4
- 101150117416 cas2 gene Proteins 0.000 description 4
- 101150055191 cas3 gene Proteins 0.000 description 4
- 101150111685 cas4 gene Proteins 0.000 description 4
- 238000003491 array Methods 0.000 description 2
- 108010028604 Caspin Proteins 0.000 description 1
- 101000633680 Homo sapiens Tetratricopeptide repeat protein 37 Proteins 0.000 description 1
- 240000003183 Manihot esculenta Species 0.000 description 1
- 235000016735 Manihot esculenta subsp esculenta Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Abstract
Description
Claims (6)
- 데이터를 저장하고 있는 셀 어레이와, 상기 셀어레이로 부터 외부로 출력되는 데이터를 선택하기 위하여 하나의 카스바신호를 입력받아 적어도 하나의 이상의 내부 카스신호를 발생하기 위한 카스바 버퍼와, 카스 인에이블 발생신호에 의하여 상기 카스바 버퍼가 발생하는 내부 카스신호의 출력수를 제어하는 제어수단을 포함하는 것을 특징으로 하는 디램.
- 제1항에 있어서, 상기 제어수단은 카스바신호가 하이이고 라이트 인에이블바신호가 로우인 상태에서 라스바신호의 논리 전이 상태에 따라 회로 동작을 제어하는 동작 제어부와, 상기 하이상태의 라이트 인에이블바신호에 의해 구동되어 입력/출력데이터의 인가에 따라 적어도 하나 이상의 카스인에이블신호를 발생하고 상기 입력/출력데이터의 논리 상태에 상기 적어도 하나 이상의 카스인에이블신호의 논리 상태를 제어하는 논리게이트로 구성되는 카스인에이블신호 발생회로를 포함하는 것을 특징으로 하는 디 램.
- 제1항에 있어서, 상기 적어도 하나 이상의 내부카스신호는 상이한 데이터 경로를 제어하고 서로 독립적으로 작동하여 서로 다른 데이터 경로에 대해 독립적으로 동작하는 것을 특징으로 하는 디램.
- 제1항에 있어서, 상기 적어도 하나 이상의 내부 카스신호는 상이한 데이터 경로를 제어하고 서로 독립적으로 데이터 경로를 제어하도록 각각 상기 제어수단에 카스인에이블 발생신호가 사용되고 상기 제어신호에 의해 원하는 내부 카스신호만 동작시키는 것을 특징으로 하는 디램.
- 제1항 또는 제4항에 있어서, 상기 카스인에이블발생신호는 라스바신호, 카스바신호, 라이트바신호, 입출력신호를 입력으로하여 논리조합하여 특정 상태에서만 디스에이블되어 해당 내부 카스신호만 발생되지 않도록 하는 것을 특징으로 하는 디램.
- 제1항 또는 제4항에 있어서, 상기 카스 인에이블발생신호는 패키지의 외부 핀으로 사용되어 새로운 입력으로 받아들여지도록 패키지에 하나의 핀을 더 첨가시켜 카스 인에이블발생신호를 발생시키는 것을 특징으로 하는 디램.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950039981A KR0170905B1 (ko) | 1995-11-06 | 1995-11-06 | 디램 |
US08/740,951 US5801998A (en) | 1995-11-06 | 1996-11-05 | Dynamic random access memory |
GB9623138A GB2307075B (en) | 1995-11-06 | 1996-11-06 | Dynamic random access memory |
DE19645745A DE19645745B4 (de) | 1995-11-06 | 1996-11-06 | Dynamischer Schreib-/Lesespeicher |
JP8308614A JPH09147548A (ja) | 1995-11-06 | 1996-11-06 | ディラム |
CN96120524A CN1113364C (zh) | 1995-11-06 | 1996-11-06 | 动态随机存取存储器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950039981A KR0170905B1 (ko) | 1995-11-06 | 1995-11-06 | 디램 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970029804A KR970029804A (ko) | 1997-06-26 |
KR0170905B1 true KR0170905B1 (ko) | 1999-03-30 |
Family
ID=19433147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950039981A KR0170905B1 (ko) | 1995-11-06 | 1995-11-06 | 디램 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5801998A (ko) |
JP (1) | JPH09147548A (ko) |
KR (1) | KR0170905B1 (ko) |
CN (1) | CN1113364C (ko) |
DE (1) | DE19645745B4 (ko) |
GB (1) | GB2307075B (ko) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100431316B1 (ko) * | 1997-06-27 | 2004-10-08 | 주식회사 하이닉스반도체 | 디램패키지및그의어드레스라인및데이터라인폭변화방법 |
US6317842B1 (en) | 1999-02-16 | 2001-11-13 | Qlogic Corporation | Method and circuit for receiving dual edge clocked data |
JP2003022674A (ja) * | 2001-07-10 | 2003-01-24 | Fujitsu Ltd | 可変設定されるデータ入出力端子とその制御信号端子を有する半導体メモリデバイス |
US7007114B1 (en) | 2003-01-31 | 2006-02-28 | Qlogic Corporation | System and method for padding data blocks and/or removing padding from data blocks in storage controllers |
US7492545B1 (en) | 2003-03-10 | 2009-02-17 | Marvell International Ltd. | Method and system for automatic time base adjustment for disk drive servo controllers |
US7039771B1 (en) | 2003-03-10 | 2006-05-02 | Marvell International Ltd. | Method and system for supporting multiple external serial port devices using a serial port controller in embedded disk controllers |
US7457903B2 (en) | 2003-03-10 | 2008-11-25 | Marvell International Ltd. | Interrupt controller for processing fast and regular interrupts |
US7870346B2 (en) | 2003-03-10 | 2011-01-11 | Marvell International Ltd. | Servo controller interface module for embedded disk controllers |
CN100416701C (zh) * | 2003-06-13 | 2008-09-03 | 钰创科技股份有限公司 | 相容于sram界面的dram的延迟读取/储存方法和电路 |
KR100557636B1 (ko) * | 2003-12-23 | 2006-03-10 | 주식회사 하이닉스반도체 | 클럭신호를 이용한 데이터 스트로브 회로 |
US7139150B2 (en) | 2004-02-10 | 2006-11-21 | Marvell International Ltd. | Method and system for head position control in embedded disk drive controllers |
US8166217B2 (en) | 2004-06-28 | 2012-04-24 | Marvell International Ltd. | System and method for reading and writing data using storage controllers |
US7102937B2 (en) * | 2004-07-07 | 2006-09-05 | Micron Technology, Inc. | Solution to DQS postamble ringing problem in memory chips |
US9201599B2 (en) | 2004-07-19 | 2015-12-01 | Marvell International Ltd. | System and method for transmitting data in storage controllers |
US7757009B2 (en) | 2004-07-19 | 2010-07-13 | Marvell International Ltd. | Storage controllers with dynamic WWN storage modules and methods for managing data and connections between a host and a storage device |
US8032674B2 (en) | 2004-07-19 | 2011-10-04 | Marvell International Ltd. | System and method for controlling buffer memory overflow and underflow conditions in storage controllers |
US7386661B2 (en) | 2004-10-13 | 2008-06-10 | Marvell International Ltd. | Power save module for storage controllers |
US7240267B2 (en) | 2004-11-08 | 2007-07-03 | Marvell International Ltd. | System and method for conducting BIST operations |
US7802026B2 (en) | 2004-11-15 | 2010-09-21 | Marvell International Ltd. | Method and system for processing frames in storage controllers |
US7609468B2 (en) | 2005-04-06 | 2009-10-27 | Marvell International Ltd. | Method and system for read gate timing control for storage controllers |
US9002801B2 (en) * | 2010-03-29 | 2015-04-07 | Software Ag | Systems and/or methods for distributed data archiving amongst a plurality of networked computing devices |
KR101132797B1 (ko) * | 2010-03-30 | 2012-04-02 | 주식회사 하이닉스반도체 | 모듈제어회로를 포함하는 반도체모듈 및 반도체모듈의 제어방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4145760A (en) * | 1978-04-11 | 1979-03-20 | Ncr Corporation | Memory device having a reduced number of pins |
JPS61113184A (ja) * | 1984-11-06 | 1986-05-31 | Nec Corp | ダイナミツクランダムアクセス半導体メモリ |
US4796232A (en) * | 1987-10-20 | 1989-01-03 | Contel Corporation | Dual port memory controller |
US4998222A (en) * | 1989-12-04 | 1991-03-05 | Nec Electronics Inc. | Dynamic random access memory with internally gated RAS |
KR100214435B1 (ko) * | 1990-07-25 | 1999-08-02 | 사와무라 시코 | 동기식 버스트 엑세스 메모리 |
JPH04109488A (ja) * | 1990-08-29 | 1992-04-10 | Mitsubishi Electric Corp | ダイナミック型半導体記憶装置 |
JP2715009B2 (ja) * | 1991-05-16 | 1998-02-16 | 三菱電機株式会社 | ダイナミックランダムアクセスメモリ装置 |
US5307320A (en) * | 1992-09-23 | 1994-04-26 | Intel Corporation | High integration DRAM controller |
JPH07182864A (ja) * | 1993-12-21 | 1995-07-21 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5600604A (en) * | 1995-05-01 | 1997-02-04 | Advanced Peripherals Labs, Inc. | System for allowing a simm module with asymmetric addressing to be utilized in a computer system |
-
1995
- 1995-11-06 KR KR1019950039981A patent/KR0170905B1/ko not_active IP Right Cessation
-
1996
- 1996-11-05 US US08/740,951 patent/US5801998A/en not_active Expired - Lifetime
- 1996-11-06 CN CN96120524A patent/CN1113364C/zh not_active Expired - Fee Related
- 1996-11-06 DE DE19645745A patent/DE19645745B4/de not_active Expired - Fee Related
- 1996-11-06 GB GB9623138A patent/GB2307075B/en not_active Expired - Fee Related
- 1996-11-06 JP JP8308614A patent/JPH09147548A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR970029804A (ko) | 1997-06-26 |
GB2307075B (en) | 2000-05-17 |
GB9623138D0 (en) | 1997-01-08 |
DE19645745B4 (de) | 2011-09-29 |
GB2307075A (en) | 1997-05-14 |
US5801998A (en) | 1998-09-01 |
CN1154560A (zh) | 1997-07-16 |
CN1113364C (zh) | 2003-07-02 |
DE19645745A1 (de) | 1997-05-07 |
JPH09147548A (ja) | 1997-06-06 |
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