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JPS62262401A - Ptc thermistor device and manufacture of the same - Google Patents

Ptc thermistor device and manufacture of the same

Info

Publication number
JPS62262401A
JPS62262401A JP10484586A JP10484586A JPS62262401A JP S62262401 A JPS62262401 A JP S62262401A JP 10484586 A JP10484586 A JP 10484586A JP 10484586 A JP10484586 A JP 10484586A JP S62262401 A JPS62262401 A JP S62262401A
Authority
JP
Japan
Prior art keywords
electrode
thin film
ptc thermistor
manufacture
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10484586A
Other languages
Japanese (ja)
Inventor
竹内 通一
菊地 昭雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP10484586A priority Critical patent/JPS62262401A/en
Publication of JPS62262401A publication Critical patent/JPS62262401A/en
Pending legal-status Critical Current

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  • Thermistors And Varistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は表面発熱型サーミスタ、特に正特性サーミスタ
(PTC)素子の形状とその製造方法に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a surface heating type thermistor, and particularly to the shape of a positive characteristic thermistor (PTC) element and its manufacturing method.

〔従来技術〕[Prior art]

従来の表面発熱型サーミスタ(PTC)は第6図、第7
図に示すように、素子表面に櫛状電極を対向して形成し
、これに連結されて素子両側面から裏面両端部に続く端
子引出部を設けていたが、このように素子表面上に後か
ら電極を設けるときは、電極をどのような方法で形成す
るにしても多(の工程を要し、生産コストが上がり、生
産性も悪いという欠点があった。また、使用の際従来の
表面発熱型サーミスタ(PTC)は発熱面が電極を介在
して伝熱面に接しているので熱放散が悪くしかも熱放散
にバラツキが生じ安定した作動が望めなかった。
Conventional surface heating type thermistors (PTC) are shown in Figures 6 and 7.
As shown in the figure, comb-shaped electrodes were formed facing each other on the surface of the element, and terminal extensions connected to these electrodes and extending from both sides of the element to both ends of the back surface were provided. However, no matter how the electrode is formed, it requires multiple steps, increases production costs, and has poor productivity.In addition, when using the conventional surface Since the heat-generating thermistor (PTC) has a heat-generating surface in contact with a heat-transfer surface through an electrode, heat dissipation is poor and the heat dissipation varies, making stable operation impossible.

〔発明が解決しようとす、る問題点〕[Problem that the invention attempts to solve]

本発明は表面発熱型PTCサーミスタにおいて、櫛状電
極の形成を容易なものとして生産性の高い、そして作動
の安定した素子の形状および素子の製遣方法を提供しよ
うとするものである。
The present invention provides a surface heating type PTC thermistor that facilitates the formation of comb-shaped electrodes, provides a highly productive element shape, and provides stable operation, as well as a method for manufacturing the element.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、第1図に示すように、素子本体の表側面1に
凹状に形成した櫛状電極溝3を対向して設け、裏側面2
両端部に端子引出段差部4を形成してなり、これを素子
素体で一体プレス成形で構成したものである。そして、
この一体成形素子を焼成磁器化し、この素子外表面に薄
膜電極を形成し、素子の表裏面1.2および電極溝3と
平行な側面5.5を研削して核間1.2.5の電極薄膜
を除去してPTCサーミスタ素子を製造するものである
As shown in FIG. 1, in the present invention, comb-shaped electrode grooves 3 formed in concave shapes are provided on the front side 1 of the element main body to face each other, and the back side 2
Terminal lead-out stepped portions 4 are formed at both ends, and these are integrally press-molded with the element body. and,
This integrally molded element is made into fired porcelain, a thin film electrode is formed on the outer surface of the element, and the front and back surfaces 1.2 of the element and the side surface 5.5 parallel to the electrode groove 3 are ground to obtain an internuclear space of 1.2.5. A PTC thermistor element is manufactured by removing the electrode thin film.

〔作 用〕[For production]

PTCサーミスタ素子を第1図に示すような形状とした
から、これに薄膜電極を形成する場合、先ず素子外表面
に薄膜電極を形成し、次いで素子の表裏面および電極溝
と平行な側面を研削して該面の電極薄膜を除去すると共
に表裏面および側面の平行平面度をだすことができ形状
の統一と作動の安定したものが製作されるものである。
Since the PTC thermistor element is shaped as shown in Figure 1, when forming a thin film electrode thereon, the thin film electrode is first formed on the outer surface of the element, and then the front and back surfaces of the element and the side surfaces parallel to the electrode groove are ground. By doing so, the electrode thin film on the surface is removed, and the front and back surfaces and side surfaces are made parallel and flat, and a device with uniform shape and stable operation is manufactured.

〔実施例〕〔Example〕

第1図〜第5図は本発明の一実施例を示すもので、PT
Cサーミスタ素子本体の表側面1に凹状に形成した櫛状
電極溝3を対向して設け、裏側面2両端部に端子引出段
差部4,4を形成してなり、これを各種配合物からなる
素子素体で一体プレス成形で構成し、次いで、これを焼
成磁器化し、そこで、必要に応じこれをバレル研磨にか
けると、各エツジ部に丸味が付けられるので、後に述べ
る研削作業中や素子取付作業および素子運搬中に素子の
衝突等によってエツジ部が一部分欠落することがあるが
、そのおそれが減少するものである。
Figures 1 to 5 show an embodiment of the present invention.
The C thermistor element main body has comb-shaped electrode grooves 3 formed in a concave shape facing each other on the front side 1, and terminal lead-out stepped portions 4, 4 are formed on both ends of the back side 2, which are made of various compounds. The element body is constructed by integral press molding, then fired into porcelain, and then subjected to barrel polishing as necessary to round each edge. This reduces the possibility that a portion of the edge portion may be missing due to a collision of the device during work or transportation of the device.

次にこの素子に対して、N+無電解、Ni無電解+電解
メッキ、Ni無電解十Ag焼付メッキ、スパッタリング
、溶射などの手段によって素子外表面全体に薄膜電極を
形成し、しかるのち、素子の表裏面1゜2および電極溝
3と平行、な側面5.5を、平面研削盤または平面ラッ
プ盤で研削して不要な電極薄膜を除去すると共に、表裏
および側面5,5の平行平面度を出して製作される。な
お、第1図に示すような素子を製作するに当り、横方向
に長いものをプレス成形で作り、これに薄膜電極を形成
後、表裏面のみを研削し、最後に適当間隔でカッティン
グすれば多種類の多量の素子が生産され、側面の研削も
不要となるから安価に多量生産できるものである。また
、薄膜電極形成にあたり、側面5゜5には電極が形成さ
れないような手段を講したときは側面5,5の研削は省
略することができる。
Next, a thin film electrode is formed on the entire outer surface of the element by means such as N+ electroless plating, Ni electroless + electrolytic plating, Ni electroless ten Ag baking plating, sputtering, and thermal spraying. The front and back surfaces 1.2 and the side surfaces 5.5 parallel to the electrode grooves 3 are ground with a surface grinder or surface lapping machine to remove unnecessary electrode thin films, and the parallel flatness of the front and back surfaces and the side surfaces 5, 5 is adjusted. produced. In order to manufacture an element like the one shown in Figure 1, it is necessary to press-form a long piece in the horizontal direction, form a thin film electrode on it, grind only the front and back surfaces, and finally cut it at appropriate intervals. A large quantity of elements of many types can be produced, and since grinding of the side surfaces is not required, mass production can be carried out at low cost. Further, when forming a thin film electrode, if measures are taken to prevent electrodes from being formed on the side surfaces 5.degree. 5, the grinding of the side surfaces 5, 5 can be omitted.

〔発明の効果〕〔Effect of the invention〕

以上述べたように、本発明の表面発熱型PTCサーミス
ク素子は、第1図のような形状としたから薄膜電極の形
成が容易となり、安価に多量生産することができるもの
である。また、表裏面が研削されて平行平面度が出てい
るから発熱表面が伝熱面にぴったり接触して取付けるこ
とができ、素子の作動を安定したものとすることができ
る。
As described above, since the surface heating type PTC thermistoric element of the present invention has the shape as shown in FIG. 1, it is easy to form a thin film electrode, and it can be mass-produced at low cost. Furthermore, since the front and back surfaces are ground to provide parallel flatness, the heat generating surface can be mounted in perfect contact with the heat transfer surface, and the operation of the element can be stabilized.

【図面の簡単な説明】[Brief explanation of drawings]

第1図〜第5図は本発明の一実施例を示し、第1図は斜
面図、第2図は表側平面図、第3図は裏側平面図、第4
図は第3図A−A線断面図、第5図は第3図の側面図、
第6図は従来例を示す斜面図、第7図は第6図で使用面
を下側にした断面図である。 1・・・表側面、2・・・裏側面、3・・・電極溝、4
・・・段差部、5・・・側面。
Figures 1 to 5 show an embodiment of the present invention, with Figure 1 being a perspective view, Figure 2 being a front side plan view, Figure 3 being a back side plan view, and Figure 4 being a back side plan view.
The figure is a sectional view taken along the line A-A in Figure 3, and Figure 5 is a side view of Figure 3.
FIG. 6 is a perspective view showing a conventional example, and FIG. 7 is a sectional view of FIG. 6 with the use surface facing downward. 1... Front side, 2... Back side, 3... Electrode groove, 4
...Step part, 5...Side surface.

Claims (2)

【特許請求の範囲】[Claims] (1)素子本体の表側面に凹状に形成した櫛状電極溝を
対向して設け、裏側面両端部に端子引出段差部を形成し
てなり、これを一体成形で構成したことを特徴とするP
TCサーミスタ素子。
(1) Concave comb-shaped electrode grooves are provided on the front side of the element body to face each other, and terminal lead-out stepped portions are formed on both ends of the back side, and these are integrally molded. P
TC thermistor element.
(2)素子本体の表側面に凹状に形成した櫛状電極溝を
対向して設け、裏側面両端部に端子引出段差部を形成し
てなり、これを素子素体で一体プレス成形し、これを焼
成磁器化し、この素子外表面に薄膜電極を形成し、素子
の表裏面および電極溝と平行な側面を研削して該面の電
極薄膜を除去することを特徴とする PTCサーミスタ素子の製造方法。
(2) Concave comb-shaped electrode grooves are provided facing each other on the front side of the element body, and terminal lead-out stepped portions are formed at both ends of the back side, which are integrally press-molded with the element body. A method for manufacturing a PTC thermistor element, which comprises firing a PTC thermistor element into porcelain, forming a thin film electrode on the outer surface of the element, and grinding the front and back surfaces of the element and side surfaces parallel to the electrode grooves to remove the electrode thin film on the surfaces. .
JP10484586A 1986-05-09 1986-05-09 Ptc thermistor device and manufacture of the same Pending JPS62262401A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10484586A JPS62262401A (en) 1986-05-09 1986-05-09 Ptc thermistor device and manufacture of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10484586A JPS62262401A (en) 1986-05-09 1986-05-09 Ptc thermistor device and manufacture of the same

Publications (1)

Publication Number Publication Date
JPS62262401A true JPS62262401A (en) 1987-11-14

Family

ID=14391662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10484586A Pending JPS62262401A (en) 1986-05-09 1986-05-09 Ptc thermistor device and manufacture of the same

Country Status (1)

Country Link
JP (1) JPS62262401A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0452702U (en) * 1990-09-12 1992-05-06
JP2012080079A (en) * 2010-09-06 2012-04-19 Murata Mfg Co Ltd Electronic component

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0452702U (en) * 1990-09-12 1992-05-06
JP2012080079A (en) * 2010-09-06 2012-04-19 Murata Mfg Co Ltd Electronic component

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