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JPS6124467U - crucible - Google Patents

crucible

Info

Publication number
JPS6124467U
JPS6124467U JP11096284U JP11096284U JPS6124467U JP S6124467 U JPS6124467 U JP S6124467U JP 11096284 U JP11096284 U JP 11096284U JP 11096284 U JP11096284 U JP 11096284U JP S6124467 U JPS6124467 U JP S6124467U
Authority
JP
Japan
Prior art keywords
crucible
substance
silicon nitride
nitride layer
recorded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11096284U
Other languages
Japanese (ja)
Inventor
栄作 森
正博 花井
照夫 伊奈
芳文 美濃和
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP11096284U priority Critical patent/JPS6124467U/en
Publication of JPS6124467U publication Critical patent/JPS6124467U/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】 第1図は従来のるつぼを示す構成図、第2図はこの考案
の一実施例におけるるつぼを票す構成図図において、1
はるつぼ、4は物質、5は窒化ケイ素層である。 なお、各図中、同一符号は同一又は相当部分を示す。
[Brief Description of the Drawings] Fig. 1 is a block diagram showing a conventional crucible, and Fig. 2 is a block diagram showing a crucible according to an embodiment of this invention.
A crucible, 4 is a substance, and 5 is a silicon nitride layer. In each figure, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 内部に収容した物質を溶融するようにしたものにおいて
、溶融した上記物質と接触する部分に窒化ケイ素層を形
成したことを特徴とするるつぼ。
1. A crucible for melting a substance contained therein, characterized in that a silicon nitride layer is formed on a portion that comes into contact with the molten substance.
JP11096284U 1984-07-19 1984-07-19 crucible Pending JPS6124467U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11096284U JPS6124467U (en) 1984-07-19 1984-07-19 crucible

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11096284U JPS6124467U (en) 1984-07-19 1984-07-19 crucible

Publications (1)

Publication Number Publication Date
JPS6124467U true JPS6124467U (en) 1986-02-13

Family

ID=30670079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11096284U Pending JPS6124467U (en) 1984-07-19 1984-07-19 crucible

Country Status (1)

Country Link
JP (1) JPS6124467U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013233744A (en) * 2012-05-09 2013-11-21 Mitsubishi Plastics Inc Gas barrier film and method of manufacturing the same
JP2015034325A (en) * 2013-08-09 2015-02-19 国立大学法人山口大学 Crucible for metal vapor deposition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013233744A (en) * 2012-05-09 2013-11-21 Mitsubishi Plastics Inc Gas barrier film and method of manufacturing the same
JP2015034325A (en) * 2013-08-09 2015-02-19 国立大学法人山口大学 Crucible for metal vapor deposition

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