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JPS6488546A - Method for exposing thick film resist - Google Patents

Method for exposing thick film resist

Info

Publication number
JPS6488546A
JPS6488546A JP24427187A JP24427187A JPS6488546A JP S6488546 A JPS6488546 A JP S6488546A JP 24427187 A JP24427187 A JP 24427187A JP 24427187 A JP24427187 A JP 24427187A JP S6488546 A JPS6488546 A JP S6488546A
Authority
JP
Japan
Prior art keywords
mask pattern
photomask
wafer
exposing
tight contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24427187A
Other languages
Japanese (ja)
Inventor
Katsufumi Omuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP24427187A priority Critical patent/JPS6488546A/en
Publication of JPS6488546A publication Critical patent/JPS6488546A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To improve the yield in the number of the chips to be formed by exposing a photoresist film by using a photomask having such a surface which projects toward a wafer formed with the photoresist film in a manner that the mask pattern comes into tight contact with the part, except the peripheral part, of the wafer. CONSTITUTION:The photomask 10 is formed to the sheet thickness (about >=0.2mm) smaller than the original sheet thickness in the part except a circular region 12 inclusive of the mask pattern 11 so that the part of the mask pattern 11 projects. The photomask 10 formed in such a manner is brought into tight contact with the wafer 13 on which the thick photoresist film 14 is previously applied. The photoresist is then exposed. The tight contact of the photoresist 14 and the mask pattern 11 while the resist build-up part 15 in the peripheral part on the wafer 13 is averted and the consequent correct exposing are thus enabled by using the photomask 10 having such surface which projects in the mask pattern part 11. The yield in the number of the chips to be formed is thereby improved.
JP24427187A 1987-09-30 1987-09-30 Method for exposing thick film resist Pending JPS6488546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24427187A JPS6488546A (en) 1987-09-30 1987-09-30 Method for exposing thick film resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24427187A JPS6488546A (en) 1987-09-30 1987-09-30 Method for exposing thick film resist

Publications (1)

Publication Number Publication Date
JPS6488546A true JPS6488546A (en) 1989-04-03

Family

ID=17116265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24427187A Pending JPS6488546A (en) 1987-09-30 1987-09-30 Method for exposing thick film resist

Country Status (1)

Country Link
JP (1) JPS6488546A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281883A (en) * 1990-11-05 1994-01-25 Fujitsu Limited Surface acoustic wave device with improved junction bonding and package miniaturization
EP0773480A1 (en) 1995-11-13 1997-05-14 Tokyo Ohka Kogyo Co., Ltd. Remover solution composition for resist and method for removing resist using the the same
JP2002090982A (en) * 2000-09-13 2002-03-27 Kimoto & Co Ltd Method for manufacturing photomask, and photomask
JP2002169264A (en) * 2000-11-30 2002-06-14 Kimoto & Co Ltd Method of making photomask and photomask
JP2015076462A (en) * 2013-10-08 2015-04-20 トヨタ自動車株式会社 Semiconductor device manufacturing method
JP2019078951A (en) * 2017-10-26 2019-05-23 トヨタ自動車株式会社 Method of manufacturing semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281883A (en) * 1990-11-05 1994-01-25 Fujitsu Limited Surface acoustic wave device with improved junction bonding and package miniaturization
EP0773480A1 (en) 1995-11-13 1997-05-14 Tokyo Ohka Kogyo Co., Ltd. Remover solution composition for resist and method for removing resist using the the same
JP2002090982A (en) * 2000-09-13 2002-03-27 Kimoto & Co Ltd Method for manufacturing photomask, and photomask
JP2002169264A (en) * 2000-11-30 2002-06-14 Kimoto & Co Ltd Method of making photomask and photomask
JP2015076462A (en) * 2013-10-08 2015-04-20 トヨタ自動車株式会社 Semiconductor device manufacturing method
JP2019078951A (en) * 2017-10-26 2019-05-23 トヨタ自動車株式会社 Method of manufacturing semiconductor device

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