Nothing Special   »   [go: up one dir, main page]

JPS645058A - Photoelectric converting device - Google Patents

Photoelectric converting device

Info

Publication number
JPS645058A
JPS645058A JP62160511A JP16051187A JPS645058A JP S645058 A JPS645058 A JP S645058A JP 62160511 A JP62160511 A JP 62160511A JP 16051187 A JP16051187 A JP 16051187A JP S645058 A JPS645058 A JP S645058A
Authority
JP
Japan
Prior art keywords
common lines
lines
discrete electrodes
interconnections
discrete
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62160511A
Other languages
Japanese (ja)
Inventor
Satoru Itabashi
Kazuaki Tashiro
Tetsuya Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP62160511A priority Critical patent/JPS645058A/en
Priority to EP88110054A priority patent/EP0296603A3/en
Publication of JPS645058A publication Critical patent/JPS645058A/en
Priority to US08/468,518 priority patent/US6069393A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To eliminate stray capacitance at insulated intersections between discrete output electrodes and common lines of a photoelectric converting element, by providing a conductor layer at the interconnections between the discrete electrodes and the common lines. CONSTITUTION:Conductor layers 16 capable of holding a fixed potential are provided at insulated interconnections between discrete electrodes 12 and common lines 18, so that no stray capacitance is produced between the discrete electrodes 12 and the common lines 18. Further, interconnections for holding potentials between the discrete electrodes 12 and between the common lines 18 at a fixed value that is sufficiently higher than the maximum potential of output lines, are provided so that no line-to line capacitance is produced between the discrete electrodes 12 or between the common lines 18. Accordingly, the lines are not coupled capacitively with each other and, thus, cross talk can be prevented effectively.
JP62160511A 1987-06-26 1987-06-26 Photoelectric converting device Pending JPS645058A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62160511A JPS645058A (en) 1987-06-26 1987-06-26 Photoelectric converting device
EP88110054A EP0296603A3 (en) 1987-06-26 1988-06-23 Photoelectric converter
US08/468,518 US6069393A (en) 1987-06-26 1995-06-06 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62160511A JPS645058A (en) 1987-06-26 1987-06-26 Photoelectric converting device

Publications (1)

Publication Number Publication Date
JPS645058A true JPS645058A (en) 1989-01-10

Family

ID=15716528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62160511A Pending JPS645058A (en) 1987-06-26 1987-06-26 Photoelectric converting device

Country Status (1)

Country Link
JP (1) JPS645058A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03120868A (en) * 1989-10-04 1991-05-23 Fuji Xerox Co Ltd Image sensor
JPH09321267A (en) * 1996-02-22 1997-12-12 Canon Inc Photoelectric conveter and driving method therefor
JP2007139236A (en) * 2005-11-15 2007-06-07 Panahome Corp Underfloor air-conditioning device and method
JP2007329434A (en) * 2006-06-09 2007-12-20 Canon Inc Radiation imaging apparatus and radiation imaging system
JP2008025984A (en) * 2006-04-28 2008-02-07 Misawa Kankyo Gijutsu Kk Facility for storing and supplying solar/geothermal heat and method for supplying the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03120868A (en) * 1989-10-04 1991-05-23 Fuji Xerox Co Ltd Image sensor
JPH09321267A (en) * 1996-02-22 1997-12-12 Canon Inc Photoelectric conveter and driving method therefor
JP2007139236A (en) * 2005-11-15 2007-06-07 Panahome Corp Underfloor air-conditioning device and method
JP2008025984A (en) * 2006-04-28 2008-02-07 Misawa Kankyo Gijutsu Kk Facility for storing and supplying solar/geothermal heat and method for supplying the same
JP2007329434A (en) * 2006-06-09 2007-12-20 Canon Inc Radiation imaging apparatus and radiation imaging system

Similar Documents

Publication Publication Date Title
AU510006B2 (en) Capacitive two dimensional writing tablet with single conducting layer
DE3881130D1 (en) MOS INPUT / OUTPUT PROTECTION USING A DESIGN WITH SWITCHABLE BODY POTENTIAL.
JPS645057A (en) Photoelectric converting device
GB2139813B (en) Electric double layer capacitor
EP0256850A3 (en) Photo-electric converter
FR2491260B1 (en) COMPOSITE LAYER ELECTRODE AND SEMICONDUCTOR DEVICE PROVIDED WITH SAME
JPS645058A (en) Photoelectric converting device
IT8119165A0 (en) ORGANIC PEROXIDES AND THEIR APPLICATION.
FR2545826B1 (en) CYCLIC DIHYDROPYRIDYLIMIDATES, AND THEIR PHARMACOLOGICAL APPLICATION
IT1183383B (en) DEVICE TO GENERATE A PREENING PRESSURE FOR A SLOPING SYSTEM WITH DOUBLE CIRCUITS
JPS645056A (en) Photoelectric converting device
JPS5219083A (en) Field-effect tansistor
JPS645060A (en) Photoelectric converting device
JPS5387188A (en) Semiconductor device
ITRM920661A1 (en) CURSOR CHANGE METHOD AND CURSOR CHANGE DEVICE TO CARRY OUT THE SAME.
JPS53110332A (en) Photoelectric converter for original
SE8105893L (en) CAPACITIVE ROAD-FREQUENCY METHORIST CONVERTER, IN PARTICULAR PRESSURE-FREQUENCY CONVERTER
JPS53149770A (en) Semiconductor device
IT1182188B (en) PROCEDURE TO ELIMINATE THE LATCHUP AND ERRORS IN THE ANALOGUE SIGNALS DUE TO CURRENT INJECTION FROM THE SUBSTRATE IN INTEGRATED CIRCUITS WITH VERTICAL POWER OUTPUT TRANSISTOR, AND RELATED INTEGRATED CIRCUITS
JPS5419365A (en) High frequency high output transistor
JPS56120146A (en) Semiconductor device
JPS6433967A (en) Input mechanism of charge transfer device
JPS5342572A (en) Charge transfer type semiconductor device
JPS55163883A (en) Photocoupling semiconductor device
JPS5429952A (en) Buffer amplifier