JPS6433967A - Input mechanism of charge transfer device - Google Patents

Abstract

PURPOSE:To obtain a device in which effects of a parasitic capacity can be eliminated to improve linearity and a structure is simple to be realized easily, by providing a specific signal holding means, a source diffusion, a first and second gate electrodes, and control means respectively. CONSTITUTION:Here provided a signal holding means including a capacitor element Co, a source diffusion (SD) 1 to which an input signal Vin held in the capacitor element Co is supplied and which sets a Fermi level corresponding to the voltage of the input signal Vin, a first gate electrode 3 which produces a potential barrier adjacent to the SD1 according to the voltage of a first control signal IG1, and a second gate electrode 4 which produces a potential well with predetermined depth adjacent to the potential barrier according to the voltage of a second control signal IG2. Moreover, a control means is provided which so controls the first and second control signals IG1, IG2 as to inject the signal charges corresponding to the difference between the Fermi level of the SD1 corresponding to the voltage of the input signal Vin and the level of the potential barrier into the potential well.