JPS6430271A - Manufacture of insulated-gate semiconductor device - Google Patents
Manufacture of insulated-gate semiconductor deviceInfo
- Publication number
- JPS6430271A JPS6430271A JP62186397A JP18639787A JPS6430271A JP S6430271 A JPS6430271 A JP S6430271A JP 62186397 A JP62186397 A JP 62186397A JP 18639787 A JP18639787 A JP 18639787A JP S6430271 A JPS6430271 A JP S6430271A
- Authority
- JP
- Japan
- Prior art keywords
- film
- trench
- silicon
- polycrystalline silicon
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0225—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate using an initial gate mask complementary to the prospective gate location, e.g. using dummy source and drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/022—Manufacture or treatment of FETs having insulated gates [IGFET] having lightly-doped source or drain extensions selectively formed at the sides of the gates
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62186397A JPS6430271A (en) | 1987-07-24 | 1987-07-24 | Manufacture of insulated-gate semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62186397A JPS6430271A (en) | 1987-07-24 | 1987-07-24 | Manufacture of insulated-gate semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6430271A true JPS6430271A (en) | 1989-02-01 |
Family
ID=16187684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62186397A Pending JPS6430271A (en) | 1987-07-24 | 1987-07-24 | Manufacture of insulated-gate semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6430271A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5472903A (en) * | 1994-05-24 | 1995-12-05 | United Microelectronics Corp. | Isolation technology for sub-micron devices |
| JPH08501015A (ja) * | 1993-11-03 | 1996-02-06 | ターゲット セラピュウティクス，インコーポレイテッド | 血管内塞栓用具のための電気分解的分離可能な接合部 |
| JPH09321278A (ja) * | 1995-12-28 | 1997-12-12 | Lg Semicon Co Ltd | Ｍｏｓ電界効果トランジスタの製造方法 |
-
1987
- 1987-07-24 JP JP62186397A patent/JPS6430271A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08501015A (ja) * | 1993-11-03 | 1996-02-06 | ターゲット セラピュウティクス，インコーポレイテッド | 血管内塞栓用具のための電気分解的分離可能な接合部 |
| US5472903A (en) * | 1994-05-24 | 1995-12-05 | United Microelectronics Corp. | Isolation technology for sub-micron devices |
| JPH09321278A (ja) * | 1995-12-28 | 1997-12-12 | Lg Semicon Co Ltd | Ｍｏｓ電界効果トランジスタの製造方法 |
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