JPS6430271A - Manufacture of insulated-gate semiconductor device - Google Patents
Manufacture of insulated-gate semiconductor deviceInfo
- Publication number
- JPS6430271A JPS6430271A JP18639787A JP18639787A JPS6430271A JP S6430271 A JPS6430271 A JP S6430271A JP 18639787 A JP18639787 A JP 18639787A JP 18639787 A JP18639787 A JP 18639787A JP S6430271 A JPS6430271 A JP S6430271A
- Authority
- JP
- Japan
- Prior art keywords
- film
- trench
- silicon
- polycrystalline silicon
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- -1 arsenic ions Chemical class 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/66583—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with initial gate mask or masking layer complementary to the prospective gate location, e.g. with dummy source and drain contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66492—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a pocket or a lightly doped drain selectively formed at the side of the gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To achieve a good controllability by a method wherein sidewalls are formed in a trench and an impurity is directly introduced into a semiconductor layer through the regions from which the sidewalls are removed to form low impurity concentration layers. CONSTITUTION:A silicon oxide film 21 is formed on the surface of a semiconductor substrate 20 and, after a trench 23 is formed, a silicon nitride film 22 is formed. Then a silicon oxide film 24 is formed and, successively, the silicon oxide films 24a left on the side surfaces of the trench 23. After a polycrystalline silicon film 25 is deposited, the polycrystalline silicon film 25a is left. Then arsenic ions are implanted to form low impurity concentration regions 26. Then the polycrystalline silicon film 25a is etched off and, successively, the silicon nitride film 22 is removed. A trench 27 is formed and a gate oxide film 28 is formed on the exposed silicon layer. Then a polycrystalline silicon film 29 is deposited over the whole surface and the polycrystalline silicon film 29a is left in the trench 27. Then the silicon oxide film 21 is etched off and arsenic ions are implanted to form electrodes 301 and 302.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18639787A JPS6430271A (en) | 1987-07-24 | 1987-07-24 | Manufacture of insulated-gate semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18639787A JPS6430271A (en) | 1987-07-24 | 1987-07-24 | Manufacture of insulated-gate semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6430271A true JPS6430271A (en) | 1989-02-01 |
Family
ID=16187684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18639787A Pending JPS6430271A (en) | 1987-07-24 | 1987-07-24 | Manufacture of insulated-gate semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6430271A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5472903A (en) * | 1994-05-24 | 1995-12-05 | United Microelectronics Corp. | Isolation technology for sub-micron devices |
| JPH08501015A (en) * | 1993-11-03 | 1996-02-06 | ターゲット セラピュウティクス，インコーポレイテッド | Electrolytically separable joints for endovascular embolization devices |
| JPH09321278A (en) * | 1995-12-28 | 1997-12-12 | Lg Semicon Co Ltd | Manufacture of mos electric field-effect transistor |
-
1987
- 1987-07-24 JP JP18639787A patent/JPS6430271A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08501015A (en) * | 1993-11-03 | 1996-02-06 | ターゲット セラピュウティクス，インコーポレイテッド | Electrolytically separable joints for endovascular embolization devices |
| US5472903A (en) * | 1994-05-24 | 1995-12-05 | United Microelectronics Corp. | Isolation technology for sub-micron devices |
| JPH09321278A (en) * | 1995-12-28 | 1997-12-12 | Lg Semicon Co Ltd | Manufacture of mos electric field-effect transistor |
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