JPS53100781A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS53100781A JPS53100781A JP1465977A JP1465977A JPS53100781A JP S53100781 A JPS53100781 A JP S53100781A JP 1465977 A JP1465977 A JP 1465977A JP 1465977 A JP1465977 A JP 1465977A JP S53100781 A JPS53100781 A JP S53100781A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- junction
- main surface
- end part
- limit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE: To limit the reverse dielectric strength of elements having planar type junctions by forming a shallow diffused layer of the same conductivity type as that of the inside of junction to the pn junction end part of substrate main surface.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1465977A JPS53100781A (en) | 1977-02-15 | 1977-02-15 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1465977A JPS53100781A (en) | 1977-02-15 | 1977-02-15 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53100781A true JPS53100781A (en) | 1978-09-02 |
Family
ID=11867330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1465977A Pending JPS53100781A (en) | 1977-02-15 | 1977-02-15 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53100781A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63194366A (en) * | 1987-02-09 | 1988-08-11 | Toshiba Corp | High breakdown-voltage planar type semiconductor element |
-
1977
- 1977-02-15 JP JP1465977A patent/JPS53100781A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63194366A (en) * | 1987-02-09 | 1988-08-11 | Toshiba Corp | High breakdown-voltage planar type semiconductor element |
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