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JPS5365086A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5365086A
JPS5365086A JP14021776A JP14021776A JPS5365086A JP S5365086 A JPS5365086 A JP S5365086A JP 14021776 A JP14021776 A JP 14021776A JP 14021776 A JP14021776 A JP 14021776A JP S5365086 A JPS5365086 A JP S5365086A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
providing
substrate
peakedly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14021776A
Other languages
Japanese (ja)
Inventor
Isao Ogura
Kenji Natori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14021776A priority Critical patent/JPS5365086A/en
Publication of JPS5365086A publication Critical patent/JPS5365086A/en
Pending legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)

Abstract

PURPOSE: To form semiconductor element isolating regions without requiring impurity diffusion by providing wedge-form grooves on one main surface of a semiconductor substrate and oxidizing the surface thereof thereby providing oxide films deeply and peakedly within the substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP14021776A 1976-11-24 1976-11-24 Production of semiconductor device Pending JPS5365086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14021776A JPS5365086A (en) 1976-11-24 1976-11-24 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14021776A JPS5365086A (en) 1976-11-24 1976-11-24 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5365086A true JPS5365086A (en) 1978-06-10

Family

ID=15263629

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14021776A Pending JPS5365086A (en) 1976-11-24 1976-11-24 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5365086A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555484B1 (en) 1997-06-19 2003-04-29 Cypress Semiconductor Corp. Method for controlling the oxidation of implanted silicon
US6579777B1 (en) * 1996-01-16 2003-06-17 Cypress Semiconductor Corp. Method of forming local oxidation with sloped silicon recess

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6579777B1 (en) * 1996-01-16 2003-06-17 Cypress Semiconductor Corp. Method of forming local oxidation with sloped silicon recess
US6555484B1 (en) 1997-06-19 2003-04-29 Cypress Semiconductor Corp. Method for controlling the oxidation of implanted silicon

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