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JPS5229152B2 - - Google Patents

Info

Publication number
JPS5229152B2
JPS5229152B2 JP51012407A JP1240776A JPS5229152B2 JP S5229152 B2 JPS5229152 B2 JP S5229152B2 JP 51012407 A JP51012407 A JP 51012407A JP 1240776 A JP1240776 A JP 1240776A JP S5229152 B2 JPS5229152 B2 JP S5229152B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51012407A
Other versions
JPS51102471A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS51102471A publication Critical patent/JPS51102471A/ja
Publication of JPS5229152B2 publication Critical patent/JPS5229152B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/911—Differential oxidation and etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP51012407A 1971-03-17 1976-02-09 Expired JPS5229152B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7103548,A NL173110C (nl) 1971-03-17 1971-03-17 Werkwijze ter vervaardiging van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een uit ten minste twee deellagen van verschillend materiaal samengestelde maskeringslaag wordt aangebracht.

Publications (2)

Publication Number Publication Date
JPS51102471A JPS51102471A (ja) 1976-09-09
JPS5229152B2 true JPS5229152B2 (ja) 1977-07-30

Family

ID=19812705

Family Applications (4)

Application Number Title Priority Date Filing Date
JP47026231A Pending JPS5135350B1 (ja) 1971-03-17 1972-03-16
JP51012408A Expired JPS5229153B2 (ja) 1971-03-17 1976-02-09
JP51012409A Granted JPS51139269A (en) 1971-03-17 1976-02-09 Method of manufacturing semiconductor element
JP51012407A Expired JPS5229152B2 (ja) 1971-03-17 1976-02-09

Family Applications Before (3)

Application Number Title Priority Date Filing Date
JP47026231A Pending JPS5135350B1 (ja) 1971-03-17 1972-03-16
JP51012408A Expired JPS5229153B2 (ja) 1971-03-17 1976-02-09
JP51012409A Granted JPS51139269A (en) 1971-03-17 1976-02-09 Method of manufacturing semiconductor element

Country Status (15)

Country Link
US (1) US3783047A (ja)
JP (4) JPS5135350B1 (ja)
AT (1) AT374622B (ja)
AU (1) AU470165B2 (ja)
BE (1) BE780907A (ja)
BR (1) BR7201440D0 (ja)
CA (1) CA954236A (ja)
CH (1) CH542514A (ja)
DE (1) DE2212049C2 (ja)
ES (1) ES400794A1 (ja)
FR (1) FR2130397B1 (ja)
GB (1) GB1382082A (ja)
IT (1) IT952978B (ja)
NL (1) NL173110C (ja)
SE (1) SE383803B (ja)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961355A (en) * 1972-06-30 1976-06-01 International Business Machines Corporation Semiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of forming
NL161301C (nl) * 1972-12-29 1980-01-15 Philips Nv Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan.
NL176029C (nl) * 1973-02-01 1985-02-01 Philips Nv Geintegreerde logische schakeling met komplementaire transistoren.
US3885994A (en) * 1973-05-25 1975-05-27 Trw Inc Bipolar transistor construction method
US3888706A (en) * 1973-08-06 1975-06-10 Rca Corp Method of making a compact guard-banded mos integrated circuit device using framelike diffusion-masking structure
US3951693A (en) * 1974-01-17 1976-04-20 Motorola, Inc. Ion-implanted self-aligned transistor device including the fabrication method therefor
US4038110A (en) * 1974-06-17 1977-07-26 Ibm Corporation Planarization of integrated circuit surfaces through selective photoresist masking
DE2438256A1 (de) * 1974-08-08 1976-02-19 Siemens Ag Verfahren zum herstellen einer monolithischen halbleiterverbundanordnung
US3962717A (en) * 1974-10-29 1976-06-08 Fairchild Camera And Instrument Corporation Oxide isolated integrated injection logic with selective guard ring
US4002511A (en) * 1975-04-16 1977-01-11 Ibm Corporation Method for forming masks comprising silicon nitride and novel mask structures produced thereby
US4044454A (en) * 1975-04-16 1977-08-30 Ibm Corporation Method for forming integrated circuit regions defined by recessed dielectric isolation
US3948694A (en) * 1975-04-30 1976-04-06 Motorola, Inc. Self-aligned method for integrated circuit manufacture
NL7506594A (nl) * 1975-06-04 1976-12-07 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
US3966514A (en) * 1975-06-30 1976-06-29 Ibm Corporation Method for forming dielectric isolation combining dielectric deposition and thermal oxidation
US3961999A (en) * 1975-06-30 1976-06-08 Ibm Corporation Method for forming recessed dielectric isolation with a minimized "bird's beak" problem
US3976511A (en) * 1975-06-30 1976-08-24 Ibm Corporation Method for fabricating integrated circuit structures with full dielectric isolation by ion bombardment
US4045250A (en) * 1975-08-04 1977-08-30 Rca Corporation Method of making a semiconductor device
FR2358748A1 (fr) * 1976-07-15 1978-02-10 Radiotechnique Compelec Procede d'autoalignement des elements d'un dispositif semi-conducteur et dispositif realise suivant ce procede
US4135954A (en) * 1977-07-12 1979-01-23 International Business Machines Corporation Method for fabricating self-aligned semiconductor devices utilizing selectively etchable masking layers
US4131497A (en) * 1977-07-12 1978-12-26 International Business Machines Corporation Method of manufacturing self-aligned semiconductor devices
US4135289A (en) * 1977-08-23 1979-01-23 Bell Telephone Laboratories, Incorporated Method for producing a buried junction memory device
DE2911726C2 (de) * 1978-03-27 1985-08-01 Ncr Corp., Dayton, Ohio Verfahren zur Herstellung eines Feldeffekttransistors
DE2824026A1 (de) * 1978-06-01 1979-12-20 Licentia Gmbh Verfahren zum herstellen eines sperrschicht-feldeffekttransistors
US4182636A (en) * 1978-06-30 1980-01-08 International Business Machines Corporation Method of fabricating self-aligned contact vias
JPS5538084A (en) * 1978-09-11 1980-03-17 Nec Corp Semiconductor integrated circuit device
JPS55128868A (en) * 1979-03-28 1980-10-06 Fujitsu Ltd Method of fabricating semiconductor device
NL7903158A (nl) * 1979-04-23 1980-10-27 Philips Nv Werkwijze voor het vervaardigen van een veldeffekt- transistor met geisoleerde poortelektrode, en transistor vervaardigd door toepassing van een derge- lijke werkwijze.
JPS55154763A (en) * 1979-05-23 1980-12-02 Hitachi Ltd Manufacture of semiconductor device
US4677456A (en) * 1979-05-25 1987-06-30 Raytheon Company Semiconductor structure and manufacturing method
US4289550A (en) * 1979-05-25 1981-09-15 Raytheon Company Method of forming closely spaced device regions utilizing selective etching and diffusion
US4376664A (en) * 1979-05-31 1983-03-15 Fujitsu Limited Method of producing a semiconductor device
JPS588139B2 (ja) * 1979-05-31 1983-02-14 富士通株式会社 半導体装置の製造方法
JPS5856546Y2 (ja) * 1979-09-26 1983-12-27 日本軽金属株式会社 パネル連結取付装置
US4313782A (en) * 1979-11-14 1982-02-02 Rca Corporation Method of manufacturing submicron channel transistors
US4656498A (en) * 1980-10-27 1987-04-07 Texas Instruments Incorporated Oxide-isolated integrated Schottky logic
US4511911A (en) * 1981-07-22 1985-04-16 International Business Machines Corporation Dense dynamic memory cell structure and process
US4443932A (en) * 1982-01-18 1984-04-24 Motorla, Inc. Self-aligned oxide isolated process and device
GB2115609B (en) * 1982-02-25 1986-04-30 Raytheon Co Semiconductor structure manufacturing method
US4569698A (en) * 1982-02-25 1986-02-11 Raytheon Company Method of forming isolated device regions by selective successive etching of composite masking layers and semiconductor material prior to ion implantation
US4591890A (en) * 1982-12-20 1986-05-27 Motorola Inc. Radiation hard MOS devices and methods for the manufacture thereof
US4572765A (en) * 1983-05-02 1986-02-25 Fairchild Camera & Instrument Corporation Method of fabricating integrated circuit structures using replica patterning
JPS6281727A (ja) * 1985-10-05 1987-04-15 Fujitsu Ltd 埋込型素子分離溝の形成方法
US4729816A (en) * 1987-01-02 1988-03-08 Motorola, Inc. Isolation formation process with active area protection
NL8700541A (nl) * 1987-03-06 1988-10-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een plak silicium plaatselijk wordt voorzien van veldoxidegebieden.
JP2609619B2 (ja) * 1987-08-25 1997-05-14 三菱電機株式会社 半導体装置
KR0167231B1 (ko) * 1994-11-11 1999-02-01 문정환 반도체장치의 격리방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517551A (en) * 1974-07-06 1976-01-21 Akira Ito Purasuchitsukugaisoseidenkionsuikino kozo

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
US3451867A (en) * 1966-05-31 1969-06-24 Gen Electric Processes of epitaxial deposition or diffusion employing a silicon carbide masking layer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517551A (en) * 1974-07-06 1976-01-21 Akira Ito Purasuchitsukugaisoseidenkionsuikino kozo

Also Published As

Publication number Publication date
IT952978B (it) 1973-07-30
CH542514A (de) 1973-09-30
ES400794A1 (es) 1975-01-16
NL173110C (nl) 1983-12-01
JPS51102471A (ja) 1976-09-09
NL7103548A (ja) 1972-09-19
SE383803B (sv) 1976-03-29
AU470165B2 (en) 1973-09-20
US3783047A (en) 1974-01-01
JPS5135350B1 (ja) 1976-10-01
CA954236A (en) 1974-09-03
FR2130397A1 (ja) 1972-11-03
AU3991472A (en) 1973-09-20
GB1382082A (en) 1975-01-29
BR7201440D0 (pt) 1973-06-07
BE780907A (fr) 1972-09-18
AT374622B (de) 1984-05-10
DE2212049A1 (de) 1972-09-21
NL173110B (nl) 1983-07-01
FR2130397B1 (ja) 1977-09-02
ATA217472A (de) 1979-01-15
DE2212049C2 (de) 1981-10-29
JPS5229153B2 (ja) 1977-07-30
JPS51139269A (en) 1976-12-01
JPS539061B2 (ja) 1978-04-03
JPS51102472A (ja) 1976-09-09

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