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JPS509156B1 - - Google Patents

Info

Publication number
JPS509156B1
JPS509156B1 JP8912970A JP8912970A JPS509156B1 JP S509156 B1 JPS509156 B1 JP S509156B1 JP 8912970 A JP8912970 A JP 8912970A JP 8912970 A JP8912970 A JP 8912970A JP S509156 B1 JPS509156 B1 JP S509156B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8912970A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8912970A priority Critical patent/JPS509156B1/ja
Priority to AU33959/71A priority patent/AU434674B2/en
Priority to GB4508071A priority patent/GB1367325A/en
Priority to CA124099A priority patent/CA924420A/en
Priority to DE19712149761 priority patent/DE2149761C3/de
Priority to NL7113825A priority patent/NL7113825A/xx
Priority to FR7136321A priority patent/FR2110326B1/fr
Publication of JPS509156B1 publication Critical patent/JPS509156B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Semiconductor Memories (AREA)
JP8912970A 1970-10-09 1970-10-09 Pending JPS509156B1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP8912970A JPS509156B1 (ja) 1970-10-09 1970-10-09
AU33959/71A AU434674B2 (en) 1970-10-09 1971-09-28 Negative resistance semiconductor element
GB4508071A GB1367325A (en) 1970-10-09 1971-09-28 Negative resistance semiconductor element
CA124099A CA924420A (en) 1970-10-09 1971-09-30 Negative resistance semiconductor element
DE19712149761 DE2149761C3 (de) 1970-10-09 1971-10-05 Thyristor mit isolierter Feldsteuerungselektrode
NL7113825A NL7113825A (ja) 1970-10-09 1971-10-08
FR7136321A FR2110326B1 (ja) 1970-10-09 1971-10-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8912970A JPS509156B1 (ja) 1970-10-09 1970-10-09

Publications (1)

Publication Number Publication Date
JPS509156B1 true JPS509156B1 (ja) 1975-04-10

Family

ID=13962261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8912970A Pending JPS509156B1 (ja) 1970-10-09 1970-10-09

Country Status (5)

Country Link
JP (1) JPS509156B1 (ja)
CA (1) CA924420A (ja)
FR (1) FR2110326B1 (ja)
GB (1) GB1367325A (ja)
NL (1) NL7113825A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007536737A (ja) * 2004-05-06 2007-12-13 マイクロン テクノロジー， インク． ラテラルサイリスタ及びトラッピング層を有するシリコン‐オン‐インシュレータ読み取り‐書き込み不揮発性メモリ

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
JPS61180472A (ja) * 1985-02-05 1986-08-13 Mitsubishi Electric Corp 半導体装置
US6229161B1 (en) 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
US6690038B1 (en) 1999-06-05 2004-02-10 T-Ram, Inc. Thyristor-based device over substrate surface
US6727528B1 (en) 2001-03-22 2004-04-27 T-Ram, Inc. Thyristor-based device including trench dielectric isolation for thyristor-body regions
US6804162B1 (en) 2001-04-05 2004-10-12 T-Ram, Inc. Read-modify-write memory using read-or-write banks
US6583452B1 (en) 2001-12-17 2003-06-24 T-Ram, Inc. Thyristor-based device having extended capacitive coupling
US6832300B2 (en) 2002-03-20 2004-12-14 Hewlett-Packard Development Company, L.P. Methods and apparatus for control of asynchronous cache
US6965129B1 (en) 2002-11-06 2005-11-15 T-Ram, Inc. Thyristor-based device having dual control ports

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007536737A (ja) * 2004-05-06 2007-12-13 マイクロン テクノロジー， インク． ラテラルサイリスタ及びトラッピング層を有するシリコン‐オン‐インシュレータ読み取り‐書き込み不揮発性メモリ
JP4915592B2 (ja) * 2004-05-06 2012-04-11 マイクロン テクノロジー， インク． ラテラルサイリスタ及びトラッピング層を有するシリコン‐オン‐インシュレータ読み取り‐書き込み不揮発性メモリ

Also Published As

Publication number Publication date
DE2149761B2 (de) 1976-08-05
AU3395971A (en) 1973-04-05
FR2110326A1 (ja) 1972-06-02
NL7113825A (ja) 1972-04-11
CA924420A (en) 1973-04-10
FR2110326B1 (ja) 1977-04-22
DE2149761A1 (de) 1972-04-13
GB1367325A (en) 1974-09-18

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