CA924420A - Negative resistance semiconductor element - Google Patents
Negative resistance semiconductor elementInfo
- Publication number
- CA924420A CA924420A CA124099A CA124099A CA924420A CA 924420 A CA924420 A CA 924420A CA 124099 A CA124099 A CA 124099A CA 124099 A CA124099 A CA 124099A CA 924420 A CA924420 A CA 924420A
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor element
- negative resistance
- resistance semiconductor
- negative
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H01L29/749—
-
- H01L27/0716—
-
- H01L29/51—
-
- H01L29/742—
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8912970A JPS509156B1 (en) | 1970-10-09 | 1970-10-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA924420A true CA924420A (en) | 1973-04-10 |
Family
ID=13962261
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA124099A Expired CA924420A (en) | 1970-10-09 | 1971-09-30 | Negative resistance semiconductor element |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS509156B1 (en) |
CA (1) | CA924420A (en) |
FR (1) | FR2110326B1 (en) |
GB (1) | GB1367325A (en) |
NL (1) | NL7113825A (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4364073A (en) | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
US4595941A (en) * | 1980-12-03 | 1986-06-17 | Rca Corporation | Protection circuit for integrated circuit devices |
JPS61180472A (en) * | 1985-02-05 | 1986-08-13 | Mitsubishi Electric Corp | Semiconductor device |
US6229161B1 (en) | 1998-06-05 | 2001-05-08 | Stanford University | Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches |
US6690038B1 (en) | 1999-06-05 | 2004-02-10 | T-Ram, Inc. | Thyristor-based device over substrate surface |
US6727528B1 (en) | 2001-03-22 | 2004-04-27 | T-Ram, Inc. | Thyristor-based device including trench dielectric isolation for thyristor-body regions |
US6804162B1 (en) | 2001-04-05 | 2004-10-12 | T-Ram, Inc. | Read-modify-write memory using read-or-write banks |
US6583452B1 (en) | 2001-12-17 | 2003-06-24 | T-Ram, Inc. | Thyristor-based device having extended capacitive coupling |
US6832300B2 (en) | 2002-03-20 | 2004-12-14 | Hewlett-Packard Development Company, L.P. | Methods and apparatus for control of asynchronous cache |
US6965129B1 (en) | 2002-11-06 | 2005-11-15 | T-Ram, Inc. | Thyristor-based device having dual control ports |
US7224002B2 (en) * | 2004-05-06 | 2007-05-29 | Micron Technology, Inc. | Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer |
-
1970
- 1970-10-09 JP JP8912970A patent/JPS509156B1/ja active Pending
-
1971
- 1971-09-28 GB GB4508071A patent/GB1367325A/en not_active Expired
- 1971-09-30 CA CA124099A patent/CA924420A/en not_active Expired
- 1971-10-08 NL NL7113825A patent/NL7113825A/xx not_active Application Discontinuation
- 1971-10-08 FR FR7136321A patent/FR2110326B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2110326A1 (en) | 1972-06-02 |
NL7113825A (en) | 1972-04-11 |
GB1367325A (en) | 1974-09-18 |
JPS509156B1 (en) | 1975-04-10 |
FR2110326B1 (en) | 1977-04-22 |
DE2149761A1 (en) | 1972-04-13 |
AU3395971A (en) | 1973-04-05 |
DE2149761B2 (en) | 1976-08-05 |
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