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JPS5826860A - スルホンアミド基を含有するフエノキシ安息香酸誘導体の製造方法 - Google Patents

スルホンアミド基を含有するフエノキシ安息香酸誘導体の製造方法

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Publication number
JPS5826860A
JPS5826860A JP57130216A JP13021682A JPS5826860A JP S5826860 A JPS5826860 A JP S5826860A JP 57130216 A JP57130216 A JP 57130216A JP 13021682 A JP13021682 A JP 13021682A JP S5826860 A JPS5826860 A JP S5826860A
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Japan
Prior art keywords
group
formula
reaction
carbon atoms
alkyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57130216A
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English (en)
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JPH0149262B2 (ja
Inventor
エル−アマデイ・アイ・ヘイバ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bayer CropScience SA
Original Assignee
Rhone Poulenc Agrochimie SA
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Publication of JPS5826860A publication Critical patent/JPS5826860A/ja
Publication of JPH0149262B2 publication Critical patent/JPH0149262B2/ja
Granted legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は、除草性を有するスルホンアミド基を含んだ載
る朴のフェノキシ安息看酸訪導体の改良製造方法に関;
するものである。
スルホンアミド基を有するフェノキシ安息香酸の除琴性
誘導体は、ヨーロッパ牲許出顧第3,416号および2
3,392号各明細書から公知である。
これらの特許出願明細書は、式 〔上記式中人は水素、弗素、塩素、臭素、沃素、ニトロ
基、−N”NCFs+ POsHsおよび1〜4個の炭
素原子を有するそのアルキルエステル基、MiNHOH
,<、カルボキシル基もしくは゛その官能性誘導基のl
s1モノアルキルアミノもしくはジアルキルアミノ基、
基NH−CO−R” (ここで R1はアルキル、アル
コキシ、モノアルキルアミノlはアルキルまたはフェニ
ル基である)、NHcoNHsへr (ここで、Pは上
記の意味を有する)、アルキルチオ、アルキルスルフィ
ニル、アルキルスルホニル、ジアルキルスルホニオ、シ
アノスルホニル、ヒト四キシ、アルカノイルオキシ、ア
ルコキシ、アルコキシカルボニルで置換され九アルコキ
シ、8H,ニトロソ、−8CN。
であ如、      。
B灯水素、弗素、塩素、臭素、沃素、アルキル、アル;
キシ、アルキルスルフィニル4L<はアルキルスルホニ
ル基、C12,No!、 CN、 NH,l。
NHCOR” (ここでH1d上記に定款した通シであ
る)またはco幽fib。
Cは水素、ハロゲンまたはアルキルもしくはジアルキル
アミノ基であり、 Dは弗素、塩素、臭素、沃素またはCFs+アルキルチ
オ、アルキルスルフィニル、アルキルスルホニル、ハロ
ゲンアルキル、スルファモイル、ホルミル、アルキルカ
ルボニル、CNまたハシメチルアミノ基であυ、 五は水素、ハロゲンアルキル、アルコキシ、アルキルス
ルフィニルまたれアルキルスルホニル基、CNI OF
、、 1%、 CO隅またはNHベトR1(ここでB1
11上記の意味を有する)でib、FはBについ゛て示
した意味の1つを有し、Rは基−CON(R’)毅5で
あル、ここでtは水素または1〜4個の炭素原子を有す
るアルキル基であシ、 Raけフェニル、ピリジルまたはチェニル基(これらの
基は任意的に、1個もしくはそれ以上のハロゲン原子、
アルキル基もしくはニトロ基によ多置換されていてもよ
い)、2〜4個の炭素原子を有するアルケニルもしくは
アルキニル基、または1〜4個の炭素原子を有するアル
キル基(任意的に、1個もしくはそれ以上の弗素、塩素
、臭素もしくは沃素原子、好ましくはCF3により置換
されていてもよく、または1個屯しくけそれ以上の次の
置換基により置換されていてもよい:カルボキシル、2
〜5個の炭素原子を有するアルコキシカルボニル、2〜
5個の炭素原子を有するアルキルカルボニル、アルキル
部分が1〜4個の炭素原子を有するモノアルキルカルバ
モイルもしくハシアルキルカルバモイル、それぞれ1〜
4個の炭素原子を有するアルキルチオ、アルキルスルフ
ィニル、アルキルスルホニル、2〜5個の炭素原子を有
するアルキルカルボニルオキシ、2〜5個の炭素原子を
有スるアルキルカルボニルアミノ甘たはシアノ基〕 の化合物とその塩とを開示している。
公知方法においては、式(1)の化合物は、式〔式中、
xH塩素、臭素もしくは沃素であり、A、B、C,D、
EおよびFは上記の意味を有する〕 の中間体の蒙ノ・ロゲン化物を式 %式%(2) 〔式中、では上記の意味を有する〕 のスルホンアミドと25〜140℃の温度にて酸受容体
の存在下、特にたとえばN、N−7/メチルアニリンも
しく祉ピリジンのような第3級アきン、たとえに無水炭
酸カリウムのようなアルカリ金属巌酸塩、またはたとえ
ば弗化セシウムのよう表アルカリ金島弗化物の存在下で
反応させることによシ製造することができる。
tが水素原子である式(1)の化合物は、公知方法によ
シたとえば1〜4個のJi2素原子を有するジアゾアル
カンとの反応によジアルキル化して、tが1〜4個の炭
素原子を有するアルキル基である対応する化合物を生成
させることができる。
式(…)の化合物と式(2)の化合物との縮合に関する
この方法は多くの欠点を有する。たとえば、収率が好ま
しくない(たとえば、ヨーロッパ特許出願第23.89
2号の実施例14については収率が27チであり、また
実施例34について社収率9.5%と算定できる)。ジ
アシル化反応の促進によシ収率が低下するのであるか、
その主な原因は酸受容体の存在であると考えられる。さ
らに、酸受容体の使用により最終生成物の単離および精
製がより困難になり、かつその費用も一層高価になるC 本発明の一目的は、これらの欠点を克服することである
本発明による方法は、酸ハロゲン化物(好ましくは塩化
物、臭化物または沃化物)を、酸受容体の不存在下、か
つハロゲン化水素酸(HCL、 HBr。
HI)が生成されるそばから気体として反応媒体よシ除
去されるような温度、シかも式(1)の反応生成物の°
′認めうる分解”を伴なわないような温度にて、式(2
)のスルホ/アミドと反応させることを特徴とする。
本発明の方法によれは、フェノキシ安息香酸のスルホン
アミド誘導体が相当に高い収率で得ることができ、たと
えば、少なくとも約30%しはしば少なくとも約50%
という収率で得られ、しかも最終生成物の回収および精
製操作L1公知方法の場合よりもずっと簡単である。
実際上、本発明に使用する酸ハロゲン化物は式(It)
の酸ハロゲン化物である。Aが基NOIまたは弗素、塩
素、臭棄もしくは沃素原子であり、Bがハロゲン原子で
あり、C,EおよびFが水素原子であシかつDが基CF
、であるような式のハロゲン化物を使用するのが好適で
ある。さらに、Rsがアルキル基、特にCH3または基
CFIであるような式(4)のスルホンアミドを使用す
るのも好適である3、本発明の方法を行ないうる温度は
、特に式(II)の酸ハロゲン化物または式(至)のス
ルホンアミドのいずれかが大過剰に存在するかどうか、
或いは触媒特性を有する溶剤を使用するかしないかに依
存して、種々変わるであろう。
たとえば、酸ハロゲン化物(II)が大過剰に存在する
場合、すなわち(I)/(2)のモル比が約1.5〜5
の範囲である場合、この酸ハロゲン化物(II)は反応
用溶媒として役立たせることができ、反応温度を80〜
200℃とすることができるが、好ましくは90〜16
0℃の範囲である。
未反応のハロゲン化物(1)は、これを不活性溶剤たと
えば炭化水素、特にペンタン、ヘキサン、ヘプタン、シ
クロペンタン、シクロヘキサン、シクロヘプタン、ベン
ゼン、トルエン4L<tiキシレン、ハロゲン化炭化水
素、特にクロルベンゼン、CS、、テトラヒドロ7ラン
、ジオキサンなどで洗浄するごとによp反応媒体から回
収することができるO 過剰量のスルホンアミドを使用する場合、すなわち化合
物(4)/(I)のモル比が1.5〜5の範囲である場
合、反応温度は一般に90〜200℃、好ましくは14
0〜160℃である0いずれの場合において・も、反応
温度は、少なくとも反応媒体を溶融させるのに充分なI
t度でなけれにならない0過剰のスルホンアミド(2)
は、これを水またはこの反応体(2)に対して不活性な
他の溶剤によル洗浄して反応媒体から回収することがで
きる。
さらに、反応体は反応温度より高い沸点を有する不活性
溶剤、たとえば塩素化もしくは非塩素化液体炭f化水素
、たとえばベンゼン、トルエン、キシレン、キシレンの
混合物またはクメンに溶解させることもでき、この場合
、最高反応温度は溶剤の沸点よりわずか低くするのが有
利である。たとえば、沸点が約153℃であるクメンの
場合、反応は好ましくは130〜150℃で行なわれる
不活性溶剤の使用は、工業規模の方法において一層良好
な熱移動を可能にするという実用的利点を有する。さら
に、これは反応媒体の局部的過熱の防止にも役立つ@ 本発明の他の具体例によれば、酸ハロゲン化物(1)と
スルホンアミド(2)との反応によジフェノキシベンゾ
イルスルホンアミド(1)を生成させるための触媒作用
を有する溶剤が使用される0この点でジメチルホルムア
ミド(−DMF、  これは約154℃で沸とうする)
およびジメチルアセトアミド(−DMAC,これは約1
64℃で沸とうする)が特に有利であル、それらの使用
によシ、反応を比較的低い温度、たとえば80〜120
℃、好ましくは90〜110℃の温度、或いはこれら溶
剤の沸点よシ僅かに低い温度において実施できるように
な)、かつ、反応速度はよシ高速となる。
以下、実施例により本発明を説明しかつどのように実施
されうるかを具体的に示すが、本発−〇範囲はこれによ
シ限定されるものでない。
!上皇ユ メタンスルホンアミ)”(zg、0.021モル)を5
−(2’−クロル−4’−()リフルオロメチル)−フ
ェノキシフ−2−二トローベンゾイルクロライド(3,
8g、 o、o 1モル)と混合した。この混合物を1
50℃にて20分間加熱した。塩酸を、生成されるそば
から反応媒体より放出させた。この媒体を冷却して黒色
油状物を得、これを水酸化ナトリウム水溶液中に溶解し
た。この溶液を濾過しそしてp液を希塩酸で酸性化させ
、これによシ式(転)の生成物を沈澱させた。かくして
、収率71チをもって、195〜197℃にて溶融しが
っ1.692crn″″’(C−0基)に赤外吸収帯を
有する生成物(3,tg)が得られた。仁の生成物は式
実施例1を反復したが、この場合250gの酸塩化物と
130gのメタンスルホンアミドとヲ使用した。反応生
成物は、混合物を冷却した後にイングロパノールからの
再結晶によシ直接に単離し九〇これによシ、式(転)の
生成物が収率64%(181g)で得られた。この生成
物の構造は、赤外吸収スペクトル(1,692em−’
における吸収帯)および核磁気共鳴スペクトル(a、s
p−にてシングレット、8.07 ppmにてマルチプ
レット)Kよシ確諺された。
比較のために、ヨーロッパ特許出願第23.392号の
実施例に記載の方法を使用し、ピリジンを酸受容体とし
て使用して反応を行った場合、収率は僅か25%でちっ
た。
代理人斧珊士今  村    元

Claims (1)

  1. 【特許請求の範囲】 (11式 〔式中、人は水素、弗素、塩素、臭素、沃素。 ニトロ基+  N=NCFg r POn &および1
    〜4個の炭素原子を有するそのアルキルエステル基、M
    Hs 、 NHOH−N黛、カルボキシル基もしくはそ
    の一官能性誘導基の1種、モノアルキルアミノもしくは
    ジアルキルアミン基、基NH−CO−R’(ここで、W
    はアルキル、アルコキシ、モノアルキルこで、R3はア
    ルキルまたはフェニル基である)、NHCONH80,
    R” (ここで、Wは上記の意味を有すル)、アルキル
    チオ、アルキルスルフィニル、アルキルスルホニル、ジ
    アルキルスルホニオ、シアノスルホニル、ヒドロキシル
    、アルカノイルオキシ、アルコキシ、アルコキシカルボ
    ニルで置換されたアルコキシ、SH,ニトロソ、−8C
    N。 あり、        。 Bは水素、弗素、塩素、臭素、沃素、アルキル、アルコ
    キシ、アルキルスルフィニル4L<はアルキルスルホニ
    ル基、cF’s、 NOx+ CN+ NH2゜NHC
    OR’  (ここで R1は上記に定義した通シである
    )またはC0NHIであシ、 Cは水素、ハロゲンまたはアルキルもしくはジアルキル
    アミノ基であり、 Dは弗素、塩素、臭素、沃素またはcFs、アルキルチ
    オ、アルキルスルフィニル、アルキルスルホニル、ハロ
    ゲノアルキル、スルファモイル、ホルミル、アルキルカ
    ルボニル、CNま九はジメチル7電ノ基であシ、 Σは水素、ハロゲノアルキル、アルコキシ、アルキルス
    ルフィニルまたはアルキルスルホニル基、CN、 CF
    s、 Nus、 C0NHzまたif NH−Co−R
    ”(ここで、R囃上記の意味を有する)であり、FはB
    について示した意味の1つを有し、Rは基−CON(R
    ’) 80tR”であシ、ここでR4は水素、または1
    〜4個の炭素原子を有するアルキル基であシ、 Wはフェニル、ピリジルまたはチェニル基(これらの基
    は任意的に、1個もしくはそれ以上のハロゲン原子、ア
    ルキル基本しくはニトロ基によ)置換されていてもよい
    )、2〜4個の炭素原子を有するアルケニルもしくはア
    ルキニル基、または1〜4個の炭素原子を有するアルキ
    ル基(任意的に、1個もしくはそれ以上の弗素、塩素、
    臭素もしくは沃素原子、好ましくはCF3により置換さ
    れていてもよく、または、1個もしくはそれ以上の次の
    置換基により置換されていて本よい二カルボキシル、2
    〜5個の炭素原子を有するアルコキシカルボニル、2〜
    5個の炭素原子を有するアルキルカルボニル、アルキル
    部分が1〜4個の炭素原子を有するモノアルキルカルバ
    モイル4L<uジアルキルカルバモイル、それぞれ1〜
    4個の炭素振4を有するアルキールチオ、アルキルスル
    フィニル、アルキルスルホニル、2〜Is個の炭素原子
    を有するアルキルカルボニルオキシ、2〜5個の炭素原
    子を有するアルキルカルボニルアミノまたはシアノ基〕 のスルホンアミド基を有するフェノキシ安息香酸誘導体
    またはその塩を製造する方法において、〔式中、Xは塩
    素、臭素もしくは沃素原子であシ、ム、B、C,D、E
    およびF杜式(1)において上記した意味を有する〕 の酸ハロゲン化物を式 %式% 〔式中、R−も上記の意味を有する〕 のスルホンアミドと反応させ、この反応を酸受容体の不
    存在下かつ気体状水素−酸副生物が生成されるそばから
    反応媒体よシ除去されるような温度にて行ない、ただし
    この温度は式(1)の生成切の分解温度よシ低いことを
    特徴とするスルホンアミド基を有するフェノキシ安息香
    酸誘導体またはその塩の製造方法。 (2)反応を過剰量の式(It)の酸ハロゲン原子の存
    在下で行なう特許請求の範囲第1項記載の方法。 (a)  式(1)の酸ハロゲン化物/式@)のスルホ
    ンアミドのモル比を1.5〜5の範囲内とする特許請求
    の範囲第2項記載の方法。 (4)反応温匿を80〜200℃、好ましくは90〜1
    60℃とする特許請求の範囲第2項またはfga項記載
    の方法。 (5)  反応を過剰量のスルホンアンドの存在下で行
    なう特許請求の範囲第1項記載の方法。 (6)式(転)のスルホンアミド/式(幻の酸ハロゲン
    化物のモル比を1,5〜5の範囲内とする特許請求の範
    囲第5項記載の方法。 (7)反応温度を90〜200℃、好ましくは140〜
    160℃とする特許請求の範囲第53Ay九扛第6項記
    載の方法。 (8)反応を、反応温度よ)高い沸点を有する溶剤の存
    在下で行なう特許請求の範H第1項乃至第7項のいずれ
    かに記載の方法。 (9)溶剤を炭化水素とする特許請求の範囲第8項記載
    の方法。 (転)溶剤をクメンとしかつ温度を130〜150℃と
    する特許請求の範囲第9項記載の方法。 (ロ)反応を、この反応に関して触媒特性を有する溶剤
    の存在下で行なう特許請求の範囲第1項乃至第8項のい
    ずれかに記載の方法。 (2)溶剤をジメチルホルムアミドもしくはジメチルア
    セドブミドとしかつ温度を80℃乃至溶剤の沸点の範囲
    内とする特許請求の範囲第11項記載の方法。 (至)温度を90℃よシ高くする特許請求の範囲第11
    項記載の方法。 04  式(1)および(n)にふ・いて、BおよびX
    が塩素原子であり、Aが塩素原子まだはNo鵞であり、
    C1EおよびFが水素原子であシかつDがCF3である
    特許請求の範囲第1項乃至第13項のいずれかに記載の
    方法。 (2)R1がアルキルまたはCF、基、好ましくはメチ
    ル基であるスルホンアミドを使用する特許請求の範囲第
    6項または第7項記載の方法。 (Li2式 の化合物を式 C&−so、−隅 の化合物と反応させる特許請求の範囲側1項乃至第15
    項のいずれかに記載の方法◇
JP57130216A 1981-07-27 1982-07-26 スルホンアミド基を含有するフエノキシ安息香酸誘導体の製造方法 Granted JPS5826860A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28693881A 1981-07-27 1981-07-27
US286938 1981-07-27

Publications (2)

Publication Number Publication Date
JPS5826860A true JPS5826860A (ja) 1983-02-17
JPH0149262B2 JPH0149262B2 (ja) 1989-10-24

Family

ID=23100791

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JP57130216A Granted JPS5826860A (ja) 1981-07-27 1982-07-26 スルホンアミド基を含有するフエノキシ安息香酸誘導体の製造方法

Country Status (23)

Country Link
JP (1) JPS5826860A (ja)
KR (1) KR880002591B1 (ja)
AT (1) AT385985B (ja)
BE (1) BE893940A (ja)
BR (1) BR8204357A (ja)
CA (1) CA1194472A (ja)
CH (1) CH652384A5 (ja)
DD (1) DD203716A5 (ja)
DE (1) DE3227847A1 (ja)
DK (1) DK333282A (ja)
ES (1) ES514352A0 (ja)
FR (1) FR2510105A1 (ja)
GB (1) GB2103611B (ja)
HU (1) HU191186B (ja)
IE (1) IE53978B1 (ja)
IL (1) IL66197A (ja)
IT (1) IT1198399B (ja)
LU (1) LU84295A1 (ja)
NL (1) NL8202994A (ja)
PL (1) PL136683B1 (ja)
PT (1) PT75322B (ja)
RO (1) RO85388B (ja)
SU (1) SU1215620A3 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8628109D0 (en) * 1986-11-25 1986-12-31 Ici Plc Chemical process
CN118922556A (zh) 2021-12-20 2024-11-08 伊努梅里斯公司 多个靶的检测和数字定量

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2960664D1 (en) * 1978-01-19 1981-11-19 Ici Plc Diphenyl ether compounds useful as herbicides; methods of using them, processes for preparing them, and herbicidal compositions containing them
DE3068101D1 (en) * 1979-07-18 1984-07-12 Ici Plc Diphenyl ether compounds, and herbicidal compositions and processes utilising them

Also Published As

Publication number Publication date
FR2510105A1 (fr) 1983-01-28
KR840000466A (ko) 1984-02-22
CH652384A5 (fr) 1985-11-15
IT1198399B (it) 1988-12-21
ES8306108A1 (es) 1983-05-01
RO85388A (ro) 1984-11-25
ATA290082A (de) 1987-11-15
KR880002591B1 (ko) 1988-12-03
PL136683B1 (en) 1986-03-31
FR2510105B1 (ja) 1984-09-07
IT8222545A1 (it) 1984-01-23
DE3227847A1 (de) 1983-02-10
JPH0149262B2 (ja) 1989-10-24
GB2103611A (en) 1983-02-23
IE53978B1 (en) 1989-05-10
IL66197A (en) 1985-11-29
PT75322A (fr) 1982-08-01
PL237639A1 (en) 1983-05-23
DK333282A (da) 1983-01-28
NL8202994A (nl) 1983-02-16
SU1215620A3 (ru) 1986-02-28
HU191186B (en) 1987-01-28
ES514352A0 (es) 1983-05-01
LU84295A1 (fr) 1984-03-22
BE893940A (fr) 1983-01-26
GB2103611B (en) 1985-04-03
RO85388B (ro) 1984-11-30
DD203716A5 (de) 1983-11-02
PT75322B (fr) 1985-11-29
CA1194472A (en) 1985-10-01
AT385985B (de) 1988-06-10
IT8222545A0 (it) 1982-07-23
BR8204357A (pt) 1983-07-19
IE821786L (en) 1983-01-27
IL66197A0 (en) 1982-11-30

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